CN103633161A - Low-cost solar component - Google Patents
Low-cost solar component Download PDFInfo
- Publication number
- CN103633161A CN103633161A CN201210296680.7A CN201210296680A CN103633161A CN 103633161 A CN103633161 A CN 103633161A CN 201210296680 A CN201210296680 A CN 201210296680A CN 103633161 A CN103633161 A CN 103633161A
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- layer
- electrode layer
- type silicon
- solar components
- anodal
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000004332 silver Substances 0.000 claims abstract description 12
- 229910052709 silver Inorganic materials 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 238000002161 passivation Methods 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 230000005684 electric field Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000002002 slurry Substances 0.000 abstract description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract 3
- 238000000034 method Methods 0.000 description 7
- 210000004027 cell Anatomy 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Sustainable Energy (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a low-cost solar component comprising a negative electrode layer, an N-type silicon layer, a P-type silicon layer and a positive electrode layer which are laminated in turn. The positive electrode layer is an aluminum oxide layer, and multiple small holes are evenly distributed on the positive electrode layer. Each small hole is internally provided with a silver layer. The positive electrode layer of the low-cost solar component is the aluminum oxide layer, and multiple small holes are evenly distributed on the positive electrode layer. Each small hole is internally provided with the silver layer. Aluminum oxide is adopted to act as the positive electrode layer, and the silver small holes are evenly distributed on the positive electrode layer so that conductivity is enhanced, use of silver slurry is saved and manufacturing cost is lowered simultaneously.
Description
Technical field
The present invention relates to technical field of solar batteries, particularly a kind of solar components cheaply.
Background technology
Solar module, is also solar panel, is the core in solar power system, is also most important part in solar power system.Solar cell is directly light energy conversion to be become to the device of electric energy by photoelectric effect or Photochemical effects.Solar cell, as green energy resource, more and more receives people's concern.The positive electrode of traditional solar module adopts silver or aluminium to print grid line, and cost is higher, and uses the electric conductivity of aluminium oxide not good.
Summary of the invention
The object of the invention is to overcome the defect that prior art exists, a kind of solar components cheaply simple for production is provided.
The technical scheme that realizes the object of the invention is: a kind of solar components cheaply, has the negative electrode layer, N-type silicon layer, P type silicon layer and the anodal layer that stack gradually; Described anodal layer is alumina layer, on anodal layer, is evenly equipped with some apertures; Described each aperture is built-in with silver layer.
Described in technique scheme, between negative electrode layer and N-type silicon layer, be also provided with the first silicon nitride anti-reflecting film layer.
Described in technique scheme, between silicon nitride anti-reflecting film layer and N-type silicon layer, be also provided with silicon dioxide passivation film.
Described in technique scheme, between P type silicon layer and anodal layer, be also provided with the second silicon dioxide passivation film.
Described in technique scheme, negative electrode layer is silver layer.
Described in technique scheme, the surface of negative electrode layer is provided with main grid and the secondary grid vertical with main grid and that equidistantly distribute that form by half tone graphic printing.
Described in technique scheme, on anodal layer, there is back electrode and back of the body electric field.
Adopt after technique scheme, the present invention has following positive effect:
(1) anodal layer of the present invention is alumina layer, on anodal layer, is evenly equipped with some apertures; Described each aperture is built-in with silver layer; Adopting aluminium oxide is anodal layer, and all arranges silver-colored aperture on collection layer, has not only improved conductivity, has saved the use of silver-colored slurry simultaneously, has reduced cost of manufacture.
(2) the present invention adopts PECVD silicon nitride film as the antireflection film layer of solar components, Main Function is to reduce reflection of light, and silicon nitride film contains a large amount of hydrogen, the surperficial dangling bonds in can well passivation silicon, thus improved carrier mobility; Simultaneously, deposition of silica film between silicon nitride film and N-type silicon, can more effective minimizing incident light in the reflection loss of solar cell surface, improve the amount that solar components absorbs sunlight, and can allow solar components absorb the whole sunlight spectrum from all angles, thereby the economic benefit of solar power station is greatly improved.
(3) between anodal layer of the present invention and P type silicon layer, be provided with the second silicon dioxide passivation film; Silicon dioxide has the effect of gettering, passivation, can improve reflection efficiency.
Accompanying drawing explanation
For content of the present invention is more easily expressly understood, according to specific embodiment also by reference to the accompanying drawings, the present invention is further detailed explanation, wherein below
Fig. 1 is structural representation of the present invention;
1. negative electrode layers in figure, 11. main grids, 12. secondary grid, 2.N type silicon layer, 3.P type silicon layer, 4. anodal layer, 41. back electrodes, 42. back of the body electric field, 5. silicon nitride anti-reflecting film layer, 6. the first silicon dioxide passivation film, 7. the second silicon dioxide passivation films.
Embodiment
(embodiment 1)
See Fig. 1, the present invention has negative electrode layer 1, N-type silicon layer 2, P type silicon layer 3 and the anodal layer 4 stacking gradually; Negative electrode layer 1 is silver layer, and the surface of negative electrode layer 1 is provided with main grid 11 and the secondary grid 12 vertical with main grid 11 and that equidistantly distribute that form by half tone graphic printing; Between negative electrode layer 1 and N-type silicon layer 2, be also provided with silicon nitride anti-reflecting film layer 5; Between silicon nitride anti-reflecting film layer 5 and N-type silicon layer 2, be provided with the first silicon dioxide passivation film 6; Anodal layer 1 is alumina layer, has back electrode 41 and back of the body electric field 42 on anodal layer 4; On anodal layer 1, be evenly equipped with some apertures; Each aperture is built-in with silver layer; Between P type silicon layer 3 and anodal layer 4, be provided with the second silicon dioxide passivation film 7.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (7)
1. a solar components cheaply, has the negative electrode layer (1), N-type silicon layer (2), P type silicon layer (3) and the anodal layer (4) that stack gradually; It is characterized in that: described anodal layer (1) is alumina layer, on anodal layer (1), is evenly equipped with some apertures; Described each aperture is built-in with silver layer.
2. solar components cheaply according to claim 1, is characterized in that: between described negative electrode layer (1) and N-type silicon layer (2), be also provided with silicon nitride anti-reflecting film layer (5).
3. solar components cheaply according to claim 1, is characterized in that: between described silicon nitride anti-reflecting film layer (5) and N-type silicon layer (2), be also provided with the first silicon dioxide passivation film (6).
4. solar components cheaply according to claim 1, is characterized in that: between described P type silicon layer (3) and anodal layer (4), be also provided with the second silicon dioxide passivation film (7).
5. according to the arbitrary described solar components cheaply of claim 1 to 4, it is characterized in that: described negative electrode layer (1) is silver layer.
6. solar components cheaply according to claim 5, is characterized in that: the surface of described negative electrode layer (1) is provided with main grid (11) and the secondary grid (12) vertical with main grid (11) and that equidistantly distribute that form by half tone graphic printing.
7. solar components cheaply according to claim 6, is characterized in that: on described anodal layer (4), have back electrode (41) and back of the body electric field (42).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210296680.7A CN103633161A (en) | 2012-08-20 | 2012-08-20 | Low-cost solar component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210296680.7A CN103633161A (en) | 2012-08-20 | 2012-08-20 | Low-cost solar component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103633161A true CN103633161A (en) | 2014-03-12 |
Family
ID=50213983
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210296680.7A Pending CN103633161A (en) | 2012-08-20 | 2012-08-20 | Low-cost solar component |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103633161A (en) |
-
2012
- 2012-08-20 CN CN201210296680.7A patent/CN103633161A/en active Pending
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140312 |