CN103617972A - High-power device-used lead frame - Google Patents

High-power device-used lead frame Download PDF

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Publication number
CN103617972A
CN103617972A CN201310548395.4A CN201310548395A CN103617972A CN 103617972 A CN103617972 A CN 103617972A CN 201310548395 A CN201310548395 A CN 201310548395A CN 103617972 A CN103617972 A CN 103617972A
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CN
China
Prior art keywords
lead frame
dowel
terminal pin
power device
matrix
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310548395.4A
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Chinese (zh)
Inventor
张轩
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Individual
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Individual
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Publication date
Application filed by Individual filed Critical Individual
Priority to CN201310548395.4A priority Critical patent/CN103617972A/en
Publication of CN103617972A publication Critical patent/CN103617972A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Lead Frames For Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The invention discloses a high-power device-used lead frame. 30 lead frame units are in single-row connection with each one another through connecting ribs so as to form the lead frame; the lead frame unit comprises a substrate, lead pins and a connecting rib; positioning holes are formed in the connecting ribs; the aperture of the positioning holes are in a range of 1.22 mm to 1.32 mm; at least three connecting ribs exist; the substrate includes a heat dissipation sheet and a mounting sheet; the a heat dissipation sheet is arranged at the joint of the substrate and the connecting rib; the surface of the connecting rib is provided with a heat dissipation fin; the height of the heat dissipation fin with respect to the plane of the connecting rib is 0.05 mm; an opening is formed in the connecting rib; the width of the opening is 2.03 mm or 0.58 mm; the depth of the opening is 0.127 mm; a mounting groove is formed in the mounting sheet; the periphery of the mounting groove is at least provided with three sealing grooves; and the cross section of the sealing grooves is triangle-shaped, trapezoid-shaped, rectangle-shaped, circular or dovetail-shaped. The high-power device-used lead frame of the invention has the advantages of simple structure, convenience in mould production, excellent sealing performance after molding encapsulation and material-saving property.

Description

The lead frame that a kind of high power device is used
Technical field
The present invention is specifically related to lead frame, the lead frame that particularly a kind of high power device is used.
Background technology
Development along with electron trade, semiconductor device adopts the more and more many of Plastic Package form, this just need to adapt to the lead frame of various different model plastic devices, and lead frame must adapt to the requirement of heat radiation, conduction and the carrying high-power chip of epoxy seal semiconductor device.
Lead frame in process of production, requires the highest to the size of lead frame, electric conductivity and heat dispersion.
Summary of the invention
The problem to be solved in the present invention be to provide be a kind ofly simple in structurely convenient to that mould is produced, good airproof performance and save the lead frame of material after plastic packaging.
For addressing the above problem, technical scheme provided by the invention is: the lead frame that a kind of high power device is used, by 30 lead frame unit are single, by dowel, connect to form, described lead frame unit comprises matrix, terminal pin and dowel, described dowel is provided with location hole, the aperture of described location hole is 1.22-1.32mm, described dowel is provided with at least three, described matrix comprises fin and installation sheet, described fin is located at matrix and dowel junction, the surface of described dowel is provided with heat radiating fin, described heat radiating fin is 0.05mm with respect to the height of dowel plane, described dowel is provided with opening, the width of described opening is 2.03mm or 0.58mm, the degree of depth is 0.127mm, described installation sheet is provided with mounting groove, described mounting groove periphery is provided with at least three sealed grooves, the cross section of described sealed groove is triangle, trapezoidal, rectangle, circle or swallow-tail form.
As a further improvement on the present invention, described terminal pin is the terminal pin of iron or ferroalloy material, and described matrix is the terminal pin of iron or ferroalloy material, and the width of described terminal pin is 0.812mm.Described terminal pin top is provided with groove, and described groove surfaces is provided with conductive layer, and described conductive layer is silver-plated or copper plate, and the thickness of described conductive layer is 3-7 μ m.Described terminal pin plane is than the high 0.965-1.067mm of matrix plane.
The present invention compared with prior art has the following advantages.
(1) lead frame that, a kind of high power device is used, by 30 lead frame unit are single, by dowel, connect to form, described lead frame unit comprises matrix, terminal pin and dowel, described dowel is provided with location hole, the aperture of described location hole is 1.22-1.32mm, the pore size of location hole is suitable, can guarantee that fixing can the assurance again of lead frame saved the material that uses lead frame, is suitable for industrial production; Described dowel is provided with at least three, described matrix comprises fin and installation sheet, described fin is located at matrix and dowel junction, the surface of described dowel is provided with heat radiating fin, described heat radiating fin is 0.05mm with respect to the height of dowel plane, described dowel is provided with opening, the width of described opening is 2.03mm or 0.58mm, the degree of depth is 0.127mm, the present invention is simple in structure, and dowel is provided with heat radiating fin and is convenient to heat radiation, guarantees the safe handling of lead frame, opening is convenient to the installation of lead frame, and saves material.Described installation sheet is provided with mounting groove, and described mounting groove periphery is provided with at least three sealed grooves, and the cross section of described sealed groove is triangle, trapezoidal, rectangle, circle or swallow-tail form.The existence of groove is convenient to form sealing ring after plastic packaging, guarantees quality and the safe handling of lead frame, according to the difference of product requirement, selects different groove shapes.The present invention is simple in structure, is convenient to that mould is produced, good airproof performance and save material after plastic packaging.
(2), described terminal pin is the terminal pin of iron or ferroalloy material, described matrix is the terminal pin of iron or ferroalloy material, the width of described terminal pin is 0.812mm, different material heat dispersions and the difference of heat conductivility difference and product requirement, according to considering, generally adopt the material of ferroalloy.Described terminal pin top is provided with groove, and described groove surfaces is provided with conductive layer, and described conductive layer is silver-plated or copper plate, and the thickness of described conductive layer is 3-7 μ m.Described terminal pin plane is than the high 0.965-1.067mm of matrix plane, the thickness of conductive layer is conductive effect and the economic expenditure that considers conductive layer, draw conductive effect preferably and meet the thickness of the conductive layer of economic benefit most, make production less expenditure can reach conductive effect again.
Accompanying drawing explanation
Fig. 1 is the structural representation of the lead frame used of high power device of the present invention.
In figure: 1-lead frame unit, 2-matrix, 3-terminal pin, 4-dowel, 5-location hole, 6-fin, 7-heat radiating fin, 8-opening, 9-mounting groove, 10-sealed groove, 11-groove.
Embodiment
Below in conjunction with drawings and Examples, the present invention is improved further to explanation.
As shown in Figure 1, the lead frame that a kind of high power device is used, by 30 lead frame unit 1 are single, by dowel, connect to form, lead frame unit 1 comprises matrix 2, terminal pin 3 and dowel 4, dowel 4 is provided with location hole 5, the aperture of location hole 5 is 1.22-1.32mm, dowel 4 is provided with three, matrix 2 comprises fin 6 and installation sheet, fin 6 is located at matrix 2 and dowel 4 junctions, installation sheet is provided with mounting groove 9, and mounting groove 9 peripheries are provided with three sealed grooves 10, and the cross section of sealed groove 10 is triangle.
The surface of dowel 4 is provided with heat radiating fin 7, and heat radiating fin 7 is 0.05mm with respect to the height of dowel 4 planes, and dowel 4 is provided with opening 8, and the width of opening 8 is 2.03mm or 0.58mm, and the degree of depth is 0.127mm.
Terminal pin 2 is the terminal pin of iron or ferroalloy material, and matrix 2 is the terminal pin of iron or ferroalloy material, and the width of terminal pin is 0.812mm.Terminal pin 3 tops are provided with groove 11, and groove 11 surfaces are provided with conductive layer, and conductive layer is silver-plated or copper plate, and the thickness of conductive layer is 3-7 μ m.Terminal pin 3 planes are than the high 0.965-1.067mm of matrix 2 plane.
Teachings herein is example of the present invention and explanation; but do not mean that the obtainable advantage of the present invention is so limited, may be to wherein one or more of the advantage realizing in the simple transformation of structure and/or some execution modes all in the application's protection range in every practice process of the present invention.

Claims (4)

1. the lead frame that high power device is used, by 30 lead frame unit (1) are single, by dowel, connect to form, described lead frame unit (1) comprises matrix (2), terminal pin (3) and dowel (4), described dowel (4) is provided with location hole (5), it is characterized in that: the aperture of described location hole (5) is 1.22-1.32mm, described dowel (4) is provided with at least three, described matrix (2) comprises fin (6) and installation sheet, described fin (6) is located at matrix (2) and dowel (4) junction, the surface of described dowel (4) is provided with heat radiating fin (7), described heat radiating fin (7) is 0.05mm with respect to the height of dowel (4) plane, described dowel (4) is provided with opening (8), the width of described opening (8) is 2.03mm or 0.58mm, the degree of depth is 0.127mm, described installation sheet is provided with mounting groove (9), described mounting groove (9) periphery is provided with at least three sealed grooves (10), the cross section of described sealed groove (10) is triangle, trapezoidal, rectangle, circle or swallow-tail form.
2. the lead frame that high power device according to claim 1 is used, it is characterized in that: described terminal pin (2) is the terminal pin of iron or ferroalloy material, described matrix (2) is the terminal pin of iron or ferroalloy material, and the width of described terminal pin is 0.812mm.
3. the lead frame that high power device according to claim 1 is used, it is characterized in that: described terminal pin (3) top is provided with groove (11), described groove (11) surface is provided with conductive layer, and described conductive layer is silver-plated or copper plate, and the thickness of described conductive layer is 3-7 μ m.
4. the lead frame that high power device according to claim 1 is used, is characterized in that: described terminal pin (3) plane is than the high 0.965-1.067mm of matrix (2) plane.
CN201310548395.4A 2013-11-08 2013-11-08 High-power device-used lead frame Pending CN103617972A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310548395.4A CN103617972A (en) 2013-11-08 2013-11-08 High-power device-used lead frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310548395.4A CN103617972A (en) 2013-11-08 2013-11-08 High-power device-used lead frame

Publications (1)

Publication Number Publication Date
CN103617972A true CN103617972A (en) 2014-03-05

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103943591A (en) * 2014-03-26 2014-07-23 张轩 Lead frame with material locking ports

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201549496U (en) * 2009-12-22 2010-08-11 宁波华龙电子股份有限公司 High-power patch-type lead frame
CN102034785A (en) * 2010-11-23 2011-04-27 吴江恒源金属制品有限公司 Improved triode lead frame
CN102386163A (en) * 2011-06-16 2012-03-21 沈健 Two-row lead frame for plastic encapsulated device for light-controlled device and sound-controlled device
CN202268344U (en) * 2011-10-25 2012-06-06 张轩 Lead frame for triodes
US20120175762A1 (en) * 2011-01-12 2012-07-12 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
CN102637664A (en) * 2012-04-12 2012-08-15 张轩 Novel lead frame
CN203617275U (en) * 2013-11-08 2014-05-28 张轩 Lead frame for high-power devices

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201549496U (en) * 2009-12-22 2010-08-11 宁波华龙电子股份有限公司 High-power patch-type lead frame
CN102034785A (en) * 2010-11-23 2011-04-27 吴江恒源金属制品有限公司 Improved triode lead frame
US20120175762A1 (en) * 2011-01-12 2012-07-12 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
CN102386163A (en) * 2011-06-16 2012-03-21 沈健 Two-row lead frame for plastic encapsulated device for light-controlled device and sound-controlled device
CN202268344U (en) * 2011-10-25 2012-06-06 张轩 Lead frame for triodes
CN102637664A (en) * 2012-04-12 2012-08-15 张轩 Novel lead frame
CN203617275U (en) * 2013-11-08 2014-05-28 张轩 Lead frame for high-power devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103943591A (en) * 2014-03-26 2014-07-23 张轩 Lead frame with material locking ports

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Application publication date: 20140305