CN103606582B - 微聚光光伏焊带及其焊接方法 - Google Patents

微聚光光伏焊带及其焊接方法 Download PDF

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CN103606582B
CN103606582B CN201310625417.2A CN201310625417A CN103606582B CN 103606582 B CN103606582 B CN 103606582B CN 201310625417 A CN201310625417 A CN 201310625417A CN 103606582 B CN103606582 B CN 103606582B
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张舒
陈辉
杨泽民
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Trina Solar Co Ltd
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Abstract

本发明公开了一种微聚光光伏焊带及其焊接方法,微聚光光伏焊带包括基带和设置在基带受光面上的反射镀层,基带的背光面为平整表面,基带的受光面上设置有多个凸起的倒V型锯齿,并且基带的受光面上在相邻的倒V型锯齿之间设置有向背光面侧凹进并且用来储存重熔后反射镀层材料的储存槽,倒V型锯齿的夹角β为106°~137°。本发明充分考虑了焊接后反射镀层在重熔后的表面形貌的变化,增加焊带的有效聚光区域,从而提高光伏组件功率。

Description

微聚光光伏焊带及其焊接方法
技术领域
本发明涉及一种微聚光光伏焊带及其焊接方法,属于光伏焊带技术领域。
背景技术
目前,光伏焊带是将太阳电池连接成串的关键辅料,太阳电池通过焊带连接后形成一个完整的电气通路,光能通过太阳能电池转化为电能,产生的电流通过焊带形成传输电路,为利用太阳能提供通路基础。如图1所示,普通焊带经过焊接后表面较为平坦,进入组件的光线入射到平坦的焊带表面,通过镜面反射出去无法被利用;如图2所示,目前存在一些特殊的异型焊带,表面加工成一定的反光沟槽结构,表面反光沟槽的夹角Φ1呈111°~137°,表面的反光镀层为Ag等高反射率高熔点贵金属,表面的镀层通常为1~5μm;如图3所示,当光入射到沟槽结构经过一定角度沟槽结构的反射,再经过玻璃、空气界面的二次反射到达电池片表面,被再次利用,从而提高了入射光的利用率,该焊带目前的组件制程需要与低温粘接设备相结合,低温粘接设备采用导电胶带粘接方式。导电胶带的成型温度低于焊带表面高反射金属镀层的熔点,从而保证在焊接后保持初始形貌,达到最佳微聚光效果。低温焊接技术的设备成本相对普通自动焊接机成本较高,且需要考虑添加Ag等低电阻导电粒子的导电胶带材料成本。故制约了该技术的应用。若采用自动焊接工艺,焊带表面的金属在焊接过程中,工艺温度必须高于焊带镀层的熔点,如图4所示,若焊带表面仍采用重复的锯齿状沟槽设计,焊带表面的金属重熔后在表面张力和重力的双重作用下,则镀层金属接近均匀的圆柱面形状进行铺展。如图5所示,α为重熔后表面切线与铅垂线的夹角,α始终大于Φ2/2;重熔后的表面对于一次反射而言,发生内全反射的有效区域对应的在α在45°~68.5°范围内;而对于二次反射表面,发生内全反射的有效区域对应的α≤34.25°,因此即使是最佳设计,该结构聚光焊带表面发生内全反射的有效区域约在50%左右,尚有较大的提升空间。
发明内容
本发明所要解决的技术问题是克服现有技术的缺陷,提供一种微聚光光伏焊带,它充分考虑了焊接后反射镀层在重熔后的表面形貌的变化,增加焊带的有效聚光区域,从而提高光伏组件功率。
为了解决上述技术问题,本发明的技术方案是:一种微聚光光伏焊带,包括基带和设置在基带受光面上的反射镀层,基带的背光面为平整表面,基带的受光面上设置有多个凸起的倒V型锯齿,并且基带的受光面上在相邻的倒V型锯齿之间设置有向背光面侧凹进并且用来储存重熔后反射镀层材料的储存槽,倒V型锯齿的夹角β为106°~137°。
进一步,所述的基带由铜材制成。
进一步,所述的反射镀层的厚度为10μm~20μm。
进一步,所述的反射镀层由低熔点金属或低熔点合金材料制成。
进一步,所述的反射镀层由锡铅合金材料制成。
进一步,所述的相邻的倒V型锯齿的齿顶间距L1为120μm~200μm。
进一步,所述的储存槽的横截面为长方形结构,并且储存槽在连接倒V型锯齿的一侧呈开口状。
进一步,所述的储存槽的横向宽度L2为48μm~80μm,纵向深度H为50μm~120μm。
本发明还提供了一种微聚光光伏焊带的焊接方法,焊接时,作用于微聚光光伏焊带与太阳能电池电极接触点的焊接温度比反射镀层材料熔点温度高20℃~30℃。采用了上述技术方案后,采用本焊带焊接后,本焊带的反射镀层发生重熔,该反射镀层材料由于重力的作用,在基带的受光面发生重新铺展,造成反射镀层底部厚度变大,顶部厚度变薄的现象,焊接后储存槽两侧的反射镀层将在2~3秒的焊接过程中,全部或部分进入储存槽内,若反射镀层采用流动性较好的锡铅合金,储存槽两侧的反射镀层材料会几乎全部进入储存槽内,重熔后β角的变化在5°以内,因此两侧区域仍构成发生内全反射的条件,而储存槽内的反射镀层材料的聚光效果由α角决定,本焊带结构在重熔后的表面对于一次反射而言,发生内全反射的有效区域对应的在α在45°~68.5°范围内;而对于二次反射表面,发生内全反射的有效区域对应的α≤34.25°,因此储存槽内的反射镀层材料的有效聚光面积在50%左右,综合作用下,整个焊带的受光面的有效聚光区域在80%左右,因此,它充分考虑了焊接后反射镀层在重熔后的表面形貌的变化,增加焊带的有效聚光区域,从而提高光伏组件功率。
附图说明
图1为现有技术的焊带的第一种结构的光路示意图;
图2为现有技术的焊带的第二种结构的结构示意图;
图3为现有技术的焊带的第二种结构的光路示意图;
图4为现有技术的焊带的第三种结构的结构示意图;
图5为现有技术的焊带的第三种结构重熔后的结构示意图;
图6为本发明的微聚光光伏焊带的结构示意图;
图7为本发明的微聚光光伏焊带发生重熔后的结构示意图;
图8为本发明的微聚光光伏焊带发生重熔后的储存槽的结构示意图;
图9为本发明的采用本焊带焊接后的太阳能电池的结构示意图;
其中,图1、图3中4为焊带,3为电池;
具体实施方式
为了使本发明的内容更容易被清楚地理解,下面根据具体实施例并结合附图,对本发明作进一步详细的说明。
如图6所示,一种微聚光光伏焊带,包括基带1和设置在基带1受光面上的反射镀层2,基带1的背光面1-3为平整表面,基带1的受光面上设置有多个凸起的倒V型锯齿1-1,并且基带1的受光面上在相邻的倒V型锯齿1-1之间设置有向背光面1-3侧凹进并且用来储存重熔后反射镀层材料的储存槽1-2,倒V型锯齿1-1的夹角β为106°~137°。假设玻璃的折射率为最常见的1.46。
基带1由铜材制成,但不限于此。
反射镀层2的厚度为10μm~20μm。
反射镀层2优先由低熔点金属或低熔点合金材料制成。
反射镀层2最好由锡铅合金材料制成。
相邻的倒V型锯齿1-1的齿顶间距L1为120μm~200μm。
储存槽1-2的横截面为长方形结构,并且储存槽1-2在连接倒V型锯齿1-1的一侧呈开口状,但不限于此,也可以是半圆,椭圆的一部分,也可以是不规则的梯形。
储存槽1-2的横向宽度L2为48μm~80μm,纵向深度H为50μm~120μm。
一种微聚光光伏焊带的焊接方法,焊接时,作用于微聚光光伏焊带与太阳能电池电极接触点的焊接温度比反射镀层材料熔点温度高20℃~30℃。它能够使本焊带与太阳能电池电极形成有效连接,使焊带的表面反射镀层2发生重熔。
本发明的工作原理如下:
采用本焊带焊接后,本焊带的反射镀层2发生重熔,如图7所示,该反射镀层2由于重力的作用,在基带1的受光面发生重新铺展,造成反射镀层2底部厚度变大,顶部厚度变薄的现象,如图8所示。假设反射镀层2的金属面积为A1,储存槽1-2的标示面积为A2,且A2的区域满足表面张力作用下的顶部弧形的原则,若A1小于A2,焊接后储存槽1-2两侧的反射镀层2将在2~3秒的焊接过程中,全部或部分进入储存槽1-2内。若反射镀层2采用流动性较好的锡铅合金,储存槽1-2两侧的反射镀层材料会几乎全部进入储存槽内,重熔后β角的变化在5°以内,因此两侧区域仍构成发生内全反射的条件,因此在图7中未标出变化后两侧的极薄的反射镀层2,而储存槽1-2内的反射镀层材料的聚光效果由α角决定,本焊带结构在重熔后的表面对于一次反射而言,发生内全反射的有效区域对应的在α在45°~68.5°范围内;而对于二次反射表面,发生内全反射的有效区域对应的α≤34.25°,因此储存槽内的反射镀层材料的有效聚光面积在50%左右。综合作用下,整个受光面的有效聚光区域在50%左右。
焊带在电池3正面粘结时,采用本发明焊带的结构,而与电池3背面电极粘接部位均采用非聚光的平整表面,从而保证所与电池3电极形成可靠的欧姆连接,焊接后的截而效果如图9所示,在电池3的受光面的焊带表面单面呈现聚光结构,背面呈现平整表面,而配合电池背面电极使用的焊带部分5两面均呈现平整表面,如图9所示。
本发明的焊带的具体制作方法如下:
通过压花装置对基带进行预处理,形成分区域的初始锯齿,也可以采用拉丝工艺,随后基带1经过退火装置进行退火处理降低基带1的屈服强度以减少焊接应力,增加组件在冷热循环过程中长期耐久性;最后经过电镀工艺控制形成厚度均匀的反射镀层2。
以上所述的具体实施例,对本发明解决的技术问题、技术方案和有益效果进行了进一步详细说明,所应理解的是,以上所述仅为本发明的具体实施例而已,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。

Claims (9)

1.一种微聚光光伏焊带,包括基带(1)和设置在基带(1)受光面上的反射镀层(2),基带(1)的背光面(1-3)为平整表面,其特征在于:基带(1)的受光面上设置有多个凸起的倒V型锯齿(1-1),并且基带(1)的受光面上在相邻的倒V型锯齿(1-1)之间设置有向背光面(1-3)侧凹进并且用来储存重熔后反射镀层材料的储存槽(1-2),倒V型锯齿(1-1)的夹角β为106°~137°。
2.根据权利要求1所述的微聚光光伏焊带,其特征在于:所述的基带(1)由铜材制成。
3.根据权利要求1所述的微聚光光伏焊带,其特征在于:所述的反射镀层(2)的厚度为10μm~20μm。
4.根据权利要求1或3所述的微聚光光伏焊带,其特征在于:所述的反射镀层(2)由低熔点金属或低熔点合金材料制成。
5.根据权利要求4所述的微聚光光伏焊带,其特征在于:所述的反射镀层(2)由锡铅合金材料制成。
6.根据权利要求1所述的微聚光光伏焊带,其特征在于:所述的相邻的倒V型锯齿(1-1)的齿顶间距L1为120μm~200μm。
7.根据权利要求1所述的微聚光光伏焊带,其特征在于:所述的储存槽(1-2)的横截面为长方形结构,并且储存槽(1-2)在连接倒V型锯齿(1-1)的一侧呈开口状。
8.根据权利要求7所述的微聚光光伏焊带,其特征在于:所述的储存槽(1-2)的横向宽度L2为48μm~80μm,纵向深度H为50μm~120μm。
9.一种如权利要求1所述的微聚光光伏焊带的焊接方法,其特征在于:焊接时,作用于微聚光光伏焊带与太阳能电池电极接触点的焊接温度比反射镀层(2)材料熔点温度高20℃~30℃。
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201950321U (zh) * 2011-03-14 2011-08-31 浙江晶科能源有限公司 一种用于光伏组件加工的电烙铁头
CN203085561U (zh) * 2013-02-07 2013-07-24 凡登(常州)新型金属材料技术有限公司 提高光伏电池组件功率的焊带
CN203589055U (zh) * 2013-11-29 2014-05-07 常州天合光能有限公司 微聚光光伏焊带

Family Cites Families (2)

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Publication number Priority date Publication date Assignee Title
US20090314326A1 (en) * 2008-06-24 2009-12-24 Moser Baer Photovoltaic Limited Photovoltaic module
US8189970B2 (en) * 2009-06-24 2012-05-29 University Of Rochester Light collecting and emitting apparatus, method, and applications

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201950321U (zh) * 2011-03-14 2011-08-31 浙江晶科能源有限公司 一种用于光伏组件加工的电烙铁头
CN203085561U (zh) * 2013-02-07 2013-07-24 凡登(常州)新型金属材料技术有限公司 提高光伏电池组件功率的焊带
CN203589055U (zh) * 2013-11-29 2014-05-07 常州天合光能有限公司 微聚光光伏焊带

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