CN105118882A - 一种低温反光焊带 - Google Patents
一种低温反光焊带 Download PDFInfo
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- CN105118882A CN105118882A CN201510590069.9A CN201510590069A CN105118882A CN 105118882 A CN105118882 A CN 105118882A CN 201510590069 A CN201510590069 A CN 201510590069A CN 105118882 A CN105118882 A CN 105118882A
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- solder strip
- light
- low
- reflecting
- copper substrate
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- 229910000679 solder Inorganic materials 0.000 title claims abstract description 25
- 229910052802 copper Inorganic materials 0.000 claims abstract description 15
- 239000010949 copper Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 6
- 238000003466 welding Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 238000000149 argon plasma sintering Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 229910045601 alloy Inorganic materials 0.000 abstract 3
- 239000000956 alloy Substances 0.000 abstract 3
- 238000010248 power generation Methods 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C13/00—Alloys based on tin
- C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
本发明提供了一种低温反光焊带,它包括铜基体,所述铜基体的上表面设置有多个正四棱台,多个正四棱台呈阵列式排布;所述正四棱台与铜基体为一体结构;所述正四棱台的表面设置有合金层;所述合金层按质量份数包括59%~61%的Sn,1%~3%的Ag和余量的Bi。本发明的一种低温反光焊带采用阵列式排布的正四棱台的结构,不但增加了牢固度,而且使焊带本身对光线散射效果得到大幅提高,使得太阳能电池组件的对光的利用率提高,发电效率可比原有的基础上提高20%;本发明的一种低温反光焊带采用焊接温度可低于150度的合金层,使得反光焊带可以满足低温工艺的要求,提高了焊带的可焊性,流动性有所提高,导电率高。
Description
技术领域
本发明涉及太阳能光伏发电领域,特别是涉及一种低温反光焊带。
背景技术
现有的太阳能电池组件一般包括多个电池片,多个电池片通过反光焊带相连。反光焊带可以减少电池片表面遮光部分,提高发电转换效率。现有的反光焊带结构很多,但对光的发散效果不够理想;使得发电效率较低。一般反光焊带表面都需要设置镀锡层,但目前的镀锡层的成份有缺陷,使得镀锡工艺中废品率较高,镀锡层在铜基体表面的分布不均匀,不易与铜基体牢靠结合。进一步的是,现有的反光焊带不易储存,容易因环境影响而损坏和失效。
发明内容
本发明为了解决上述技术问题而提供了一种对光发散效果优良、牢固度高、导电率高的低温反光焊带。
一种低温反光焊带,它包括铜基体,所述铜基体的上表面设置有多个正四棱台,多个正四棱台呈阵列式排布;所述正四棱台与铜基体为一体结构;所述正四棱台的表面设置有合金层;所述合金层按质量份数包括59%~61%的Sn,1%~3%的Ag和余量的Bi。
所述合金层按质量份数包括60%的Sn,2%的Ag和38%的Bi。
相邻的所述正四棱台的底部紧密相接。
本发明的优点:本发明的一种低温反光焊带采用阵列式排布的正四棱台的结构,不但增加了牢固度,而且使焊带本身对光线散射效果得到大幅提高,使得太阳能电池组件的对光的利用率提高,发电效率可比原有的基础上提高20%;本发明的一种低温反光焊带采用焊接温度可低于150度的合金层,使得反光焊带可以满足低温工艺的要求,提高了焊带的可焊性,流动性有所提高,导电率高。
附图说明
图1为实施例的一种低温反光焊带的结构示意图;
其中,1-铜基体,11-正四棱台,2-合金层。
具体实施方式
为了加深对本发明的理解,下面将结合附图和实施例对本发明做进一步详细描述,该实施例仅用于解释本发明,并不对本发明的保护范围构成限定。
实施例
如图1所示,一种低温反光焊带,它包括铜基体,所述铜基体1的上表面设置有多个正四棱台11,多个正四棱台11呈阵列式排布;相邻的正四棱台11的底部紧密相接;所述正四棱台11与铜基体1为一体结构;所述正四棱台11的表面设置有合金层2;所述合金层2按质量份数包括60%的Sn,2%的Ag和38%的Bi。
本实施例采用阵列式排布的正四棱台的结构,不但增加了牢固度,而且使焊带本身对光线散射效果得到大幅提高,使得太阳能电池组件的对光的利用率提高,发电效率可比原有的基础上提高20%;焊接温度可低于150度,
上述实施例不应以任何方式限制本发明,凡采用等同替换或等效转换的方式获得的技术方案均落在本发明的保护范围内。
Claims (3)
1.一种低温反光焊带,其特征在于:它包括铜基体,所述铜基体的上表面设置有多个正四棱台,多个正四棱台呈阵列式排布;所述正四棱台与铜基体为一体结构;所述正四棱台的表面设置有合金层;所述合金层按质量份数包括59%~61%的Sn,1%~3%的Ag和余量的Bi。
2.根据权利要求1所述的一种低温反光焊带,其特征在于:所述合金层按质量份数包括60%的Sn,2%的Ag和38%的Bi。
3.根据权利要求1所述的一种低温反光焊带,其特征在于:相邻的所述正四棱台的底部紧密相接。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108258073A (zh) * | 2016-12-27 | 2018-07-06 | 阿特斯阳光电力集团有限公司 | 光伏焊带及光伏组件 |
CN108428760A (zh) * | 2018-03-26 | 2018-08-21 | 张学青 | 一种高效光伏焊带及其制作方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103456820A (zh) * | 2013-08-16 | 2013-12-18 | 常州天合光能有限公司 | 微聚光光伏焊带 |
CN103606582A (zh) * | 2013-11-29 | 2014-02-26 | 常州天合光能有限公司 | 微聚光光伏焊带及其焊接方法 |
CN103681927A (zh) * | 2013-12-26 | 2014-03-26 | 无锡市斯威克科技有限公司 | 对射型反光焊带 |
CN103794656A (zh) * | 2013-02-07 | 2014-05-14 | 凡登(常州)新型金属材料技术有限公司 | 提高光伏电池组件功率的焊带及其制备方法 |
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- 2015-09-16 CN CN201510590069.9A patent/CN105118882A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103794656A (zh) * | 2013-02-07 | 2014-05-14 | 凡登(常州)新型金属材料技术有限公司 | 提高光伏电池组件功率的焊带及其制备方法 |
CN103456820A (zh) * | 2013-08-16 | 2013-12-18 | 常州天合光能有限公司 | 微聚光光伏焊带 |
CN103606582A (zh) * | 2013-11-29 | 2014-02-26 | 常州天合光能有限公司 | 微聚光光伏焊带及其焊接方法 |
CN103681927A (zh) * | 2013-12-26 | 2014-03-26 | 无锡市斯威克科技有限公司 | 对射型反光焊带 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108258073A (zh) * | 2016-12-27 | 2018-07-06 | 阿特斯阳光电力集团有限公司 | 光伏焊带及光伏组件 |
CN108428760A (zh) * | 2018-03-26 | 2018-08-21 | 张学青 | 一种高效光伏焊带及其制作方法 |
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