CN103594810B - Thin substrate amplitude correction surface of oscillator horn antenna - Google Patents
Thin substrate amplitude correction surface of oscillator horn antenna Download PDFInfo
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- CN103594810B CN103594810B CN201310617311.8A CN201310617311A CN103594810B CN 103594810 B CN103594810 B CN 103594810B CN 201310617311 A CN201310617311 A CN 201310617311A CN 103594810 B CN103594810 B CN 103594810B
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Abstract
Thin substrate amplitude correction surface of oscillator horn antenna relates to a kind of horn antenna.This antenna is included in microstrip feed line (2), horn antenna (3) and multiple oscillator (4) on medium substrate (1), horn antenna (3) is made up of the first metal flat (7), the second metal flat (8) and two rows' metallization via hole trumpet side walls (9), metallization arrays of vias (11) and dielectric-filled waveguide (14) is had in horn antenna (3), on the bore face (10) of horn antenna (3), the width of each dielectric-filled waveguide (14) is equal, and is all connected to an oscillator (4).Electromagnetic wave constant amplitude can arrive oscillator radiation again, the polarization of radiation field and substrate-parallel.This antenna can use thin Substrate manufacture and gain is high, cost is low and compact conformation.
Description
Technical field
The present invention relates to a kind of horn antenna, especially a kind of thin substrate amplitude correction surface of oscillator horn antenna.
Background technology
Horn antenna has a wide range of applications in the systems such as satellite communication, terrestrial microwave link and radio telescope.But the huge physical dimension of three-dimensional horn antenna constrains its application and development in planar circuit.In recent years, the proposition of substrate integrated waveguide technology and development well facilitate the development of planar horn antenna.Substrate integration wave-guide have size little, lightweight, be easy to integrated and the advantage such as processing and fabricating.Based on the substrate integration wave-guide planar horn antenna of the plane of substrate integration wave-guide except the feature with horn antenna, also well achieve the miniaturization of horn antenna, lightness, and be easy to be integrated in microwave and millimeter wave planar circuit.Traditional substrate integration wave-guide planar horn antenna have a restriction, the thickness of antenna horn aperture substrate is greater than 1/10th operation wavelengths, and antenna just can have good radiance, not so due to reflection, the energy emission in antenna is not gone out.So just require that the thickness of antenna substrate can not be too thin, L-band etc. comparatively low-frequency range to meet this requirement very difficult especially, very thick substrate not only volume and weight is very large, counteracts integrated advantage, but also adds cost.The polarised direction of these antenna radiation field is generally all perpendicular to medium substrate in addition, and some application needs the polarization parallel of radiation field in medium substrate.More existing antennas load the radiation that paster improves thin substrate plane horn antenna before planar horn antenna, but the patch size loaded is comparatively large, and working band is narrower.The gain of substrate integration wave-guide planar horn antenna traditional is in addition relatively low, and its reason is because horn mouth constantly opens, and causes Electromagnetic Wave Propagation uneven to the amplitude distribution of electric field strength during horn mouth diametric plane, radiation directivity and gain reduction.Existing method such as employing coated by dielectric, medium prism etc. at present, correct loudspeaker aperture field, but these methods all can only improve the consistency of PHASE DISTRIBUTION, can not improve the uniformity of amplitude distribution, and these phase alignment structures add the overall structure size of antenna.
Summary of the invention
technical problem:the object of the invention is to propose a kind of thin substrate amplitude correction surface of oscillator horn antenna, the polarised direction of this radiation field of aerial is parallel with medium substrate, very thin medium substrate manufacture can be used, when the electric very thin thickness of substrate, still there is excellent radiance, and this planar horn antenna can electromagnetic wave amplitude distribution inconsistent on RECTIFYING ANTENNA bore face.
technical scheme:thin substrate amplitude correction surface of oscillator horn antenna of the present invention, is characterized in that this antenna comprises the microstrip feed line be arranged on medium substrate, the integrated horn antenna of substrate and multiple oscillator; First port of described microstrip feed line is the input/output port of this antenna, and the second port of microstrip feed line connects with the integrated horn antenna of substrate; The integrated horn antenna of substrate to be connected the first metal flat and the second metal flat by the first metal flat being positioned at medium substrate one side, the second metal flat of being positioned at medium substrate another side two row's metallization via hole trumpet side walls with through medium substrate form, width between two row's metallization via hole trumpet side walls of the integrated horn antenna of substrate becomes large gradually, form one tubaeformly to dehisce, the end of dehiscing is the bore face of the integrated horn antenna of substrate; Have metallization arrays of vias to connect the first metal flat and the second metal flat in the integrated horn antenna of substrate, the head end of metallization arrays of vias is inner at the integrated horn antenna of substrate, and the tail end of metallization arrays of vias is on the bore face of the integrated horn antenna of substrate; Row's metallization via hole trumpet side walls that two adjacent metallization arrays of vias or a metallization arrays of vias are adjacent, forms dielectric-filled waveguide with the first metal flat and the second metal flat; On the bore face of the integrated horn antenna of substrate, the width of each dielectric-filled waveguide is equal, and outside bore face, each dielectric-filled waveguide is connected to an oscillator.
The conduction band of microstrip feed line connects with the first metal flat, and the ground plane of microstrip feed line connects with the second metal flat.
The broken line that the shape of described metallization arrays of vias is made up of one or more curve, the common summit of two adjacent curve negotiatings connects, and the shape of a curve of broken line can be straight line, camber line or other curve.
The width of dielectric-filled waveguide will make electromagnetic wave to propagate and not to be cut off wherein.
Select the metallization head end of arrays of vias and summit in the position of the integrated horn antenna inside of substrate, make the electromagnetic wave power that transmits in each dielectric-filled waveguide equal.
Each oscillator has the first radiation arm and the second radiation arm respectively on the two sides being positioned at medium substrate, first radiation arm of oscillator is connected with the first metal flat of the integrated horn antenna of substrate, second radiation arm of oscillator is connected with the second metal flat of the integrated horn antenna of substrate, and the first radiation arm and second radiation arm of each oscillator stretch in the opposite direction.
Metallize in via hole trumpet side walls and metallization arrays of vias, the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, makes the metallization via hole trumpet side walls formed can be equivalent to electric wall with metallization arrays of vias.
Electromagnetic wave inputs from one end of microstrip feed line, and the other end through microstrip feed line enters substrate integration wave-guide horn antenna, after propagating a segment distance, runs into metallization arrays of vias, just enters the transmission of each dielectric-filled waveguide respectively.Enter the electromagnetic relative power of each dielectric-filled waveguide primarily of the metallization head end broken line of arrays of vias and the determining positions of polygon vertex, the adjustment metallization head end of arrays of vias and summit are in the position of the integrated horn antenna inside of substrate, the electromagnetic relative power transmitted through each dielectric-filled waveguide can be adjusted, and then can ensure that the power transmitted in each dielectric-filled waveguide is equal, because dielectric-filled waveguide each on bore face is connected to the oscillator of a same caliber size, the power entering each element radiates is like this also equal, namely ensure that whole antenna is that constant amplitude width is penetrated, this provides for improved the gain of antenna.
Just can control to power at antenna opening diametric plane the amplitude distribution of magnetic wave in the above described manner, if the port width remaining on each dielectric-filled waveguide on antenna opening diametric plane is equal, and the adjustment metallization head end of arrays of vias and summit are in the position of the integrated horn antenna inside of substrate, make to arrive antenna opening diametric plane by the electromagnetic same width of each dielectric-filled waveguide transmission, and then enter each element radiates with width, the polarised direction of radiation field also becomes and connects subparallel horizontal direction with substrate, so not only can make when the thin substrate of electricity, whole antenna has excellent radiance, and reach the raising aperture efficiency of antenna and the object of gain.
Owing to there being multiple metallization arrays of vias that the bore face of antenna is divided into a lot of little bore faces, it is very little that the size of the oscillator that each osculum diametric plane connects can be done, and compact conformation, the size of such antenna also only increase seldom.
Antenna is between feeding microstrip line to oscillator, and be all closed substrate integrated wave guide structure, therefore feeder loss is less.
In like manner also can realize specific field intensity amplitude distribution as required on the bore face of antenna.
beneficial effect:the beneficial effect of the present invention's thin substrate amplitude correction surface of oscillator horn antenna is that the polarised direction of this radiation field of aerial is parallel with medium substrate; This antenna can use the medium substrate manufacture of thickness of wavelength lower than 2 percent, far below the substrate thickness of 1/10th wavelength required by usual planar horn antenna, when the electric very thin thickness of substrate, still there is excellent radiance, such as in 6GHz frequency, adopt the thickness of epoxide resin material substrate can be reduced to 0.5mm by 2.5mm, thus greatly reduce size, weight and cost; And this planar horn antenna inside be embedded with metallization arrays of vias can electromagnetic wave amplitude distribution inconsistent on RECTIFYING ANTENNA bore face, compact conformation, the feeder loss of antenna are little.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the present invention is further described.
Fig. 1 is the structural representation of the present invention's thin substrate amplitude correction surface of oscillator horn antenna.
Have in figure: the integrated horn antenna 3 of medium substrate 1, microstrip feed line 2, substrate, layered transducer elements 4, first port 5 of microstrip feed line 2, second port 6 of microstrip feed line 2, first metal flat 7 of medium substrate 1, second metal flat 8 of medium substrate 1, metallization via hole trumpet side walls 9, the bore face 10 of antenna 3, metallization arrays of vias 11, the head end 12 of metallization arrays of vias 11, the tail end 13 of metallization arrays of vias 11, dielectric-filled waveguide 14, the conduction band 15 of microstrip feed line 2, the ground plane 16 of microstrip feed line 2, summit 17, first radiation arm 18 of oscillator 4 and the second radiation arm 19 of oscillator 4.
Embodiment
Embodiment of the present invention is: thin substrate amplitude correction surface of oscillator horn antenna comprises the microstrip feed line 2 be arranged on medium substrate 1, the integrated horn antenna of substrate 3 and multiple oscillator 4; First port 5 of described microstrip feed line 2 is input/output ports of this antenna, and the second port 6 of microstrip feed line 2 connects with the integrated horn antenna 3 of substrate; The integrated horn antenna 3 of substrate to be connected the first metal flat 7 and the second metal flat 8 by the first metal flat 7 being positioned at medium substrate 1 one side, the second metal flat 8 of being positioned at medium substrate 1 another side two row's metallization via hole trumpet side walls 9 with through medium substrate 1 form, width between two row's metallization via hole trumpet side walls 9 of the integrated horn antenna of substrate 3 becomes large gradually, form one tubaeformly to dehisce, the end of dehiscing is the bore face 10 of the integrated horn antenna 3 of substrate; Metallization arrays of vias 11 is had to connect the first metal flat 7 and the second metal flat 8 in the integrated horn antenna 3 of substrate, the head end 12 of metallization arrays of vias 11 is inner at the integrated horn antenna 3 of substrate, and the tail end 13 of metallization arrays of vias 11 is on the bore face 10 of the integrated horn antenna 3 of substrate; Row's metallization via hole trumpet side walls 9 that two adjacent metallization arrays of vias 11 or a metallization arrays of vias 11 are adjacent, forms dielectric-filled waveguide 14 with the first metal flat 7 and the second metal flat 8; On the bore face 10 of the integrated horn antenna 3 of substrate, the width of each dielectric-filled waveguide 14 is equal, and in bore face 10, outer each dielectric-filled waveguide 14 is connected to an oscillator 4.
The conduction band 15 of microstrip feed line 2 connects with the first metal flat 7, and the ground plane 16 of microstrip feed line 2 connects with the second metal flat 8.
The broken line that the shape of described metallization arrays of vias 11 is made up of one or more curve, the summit 17 that two adjacent curve negotiatings are common connects, and the shape of a curve of broken line can be straight line, camber line or other curve.
The width of dielectric-filled waveguide 14 will make electromagnetic wave to propagate and not to be cut off wherein.
The head end 12 of selection metallization arrays of vias 11 and summit 17, in the position of substrate integrated horn antenna 3 inside, make the electromagnetic wave power of transmission in each dielectric-filled waveguide 14 equal.
Each oscillator 4 has the first radiation arm 18 and the second radiation arm 19 respectively on the two sides being positioned at medium substrate 1, first radiation arm 18 of oscillator 4 is connected with the first metal flat 7 of the integrated horn antenna 3 of substrate, second radiation arm 19 of oscillator 4 is connected with the second metal flat 8 of the integrated horn antenna 3 of substrate, and the first radiation arm 18 of each oscillator 4 and the second radiation arm 19 stretch in the opposite direction.
Described metallization via hole trumpet side walls 9 is with in metallization arrays of vias 11, the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, makes the metallization via hole trumpet side walls 9 formed can be equivalent to electric wall with metallization arrays of vias 11.
When designing, in metallization arrays of vias 11, head end 12 and summit 17 relative position in the integrated horn antenna 3 of substrate determines that electromagnetic wave enters the principal element of the relative power size in each dielectric-filled waveguide 14.Regulate head end 12 and summit 17 relative position in the integrated horn antenna of substrate 3 in metallization arrays of vias 11 that the power entering each dielectric-filled waveguide 14 just can be made the same, because the width of each dielectric-filled waveguide 14 on antenna opening diametric plane 10 is the same, the power entering the radiation of each oscillator 4 so too, thus reaches the object of constant amplitude radiation.
In technique, thin substrate amplitude correction surface of oscillator horn antenna both can adopt common printed circuit board (PCB) (PCB) technique, and the integrated circuit technologies such as LTCC (LTCC) technique or CMOS, Si substrate also can be adopted to realize.The via hole that wherein metallizes can be hollow metal through hole also can be solid metal hole, and also can be continuous print metallization wall, the shape of metal throuth hole can be circular, also can be square or other shapes.
Structurally, according to same principle, can increase or reduce the quantity of metallization arrays of vias 11, and then change quantity and the size of oscillator 4, as long as ensure that dielectric-filled waveguide 15 can transmit main mould.
According to the above, just the present invention can be realized.
Claims (5)
1. thin substrate amplitude correction surface of oscillator horn antenna, is characterized in that this antenna comprises the microstrip feed line (2) be arranged on medium substrate (1), the integrated horn antenna of substrate (3) and multiple oscillator (4); First port (5) of described microstrip feed line (2) is the input/output port of this antenna, and second port (6) of microstrip feed line (2) connects with the integrated horn antenna of substrate (3); The integrated horn antenna of substrate (3) to be connected the first metal flat (7) and the second metal flat (8) by the first metal flat (7) being positioned at medium substrate (1) one side, the second metal flat (8) of being positioned at medium substrate (1) another side two rows with through medium substrate (1) via hole trumpet side walls (9) that metallizes forms, width between two rows' metallization via hole trumpet side walls (9) of the integrated horn antenna of substrate (3) becomes large gradually, form one tubaeformly to dehisce, the end of dehiscing is the bore face (10) of the integrated horn antenna of substrate (3); Metallization arrays of vias (11) is had to connect the first metal flat (7) and the second metal flat (8) in the integrated horn antenna of substrate (3), the head end (12) of metallization arrays of vias (11) is inner at the integrated horn antenna of substrate (3), and the tail end (13) of metallization arrays of vias (11) is on the bore face (10) of the integrated horn antenna of substrate (3); Row's metallization via hole trumpet side walls (9) that two adjacent metallization arrays of vias (11) or metallization arrays of vias (11) are adjacent, forms dielectric-filled waveguide (14) with the first metal flat (7) and the second metal flat (8); On the bore face (10) of the integrated horn antenna of substrate (3), the width of each dielectric-filled waveguide (14) is equal, bore face (10) outward each dielectric-filled waveguide (14) be connected to an oscillator (4) through the broadband line such as a section;
The thickness of medium substrate (1) lower than 2 percent wavelength;
The shape of metallization arrays of vias (11) to be connected the broken line that forms successively by straight line or by many straight lines, and the common summit (17) of two straight-line passes adjacent in broken line connects;
Each oscillator (4) has the first radiation arm (18) and the second radiation arm (19) respectively on the two sides being positioned at medium substrate (1), first radiation arm (18) of oscillator (4) is connected with first metal flat (7) of the integrated horn antenna of substrate (3), second radiation arm (19) of oscillator (4) is connected with second metal flat (8) of the integrated horn antenna of substrate (3), and the first radiation arm (18) and second radiation arm (19) of each oscillator (4) stretch in the opposite direction.
2. thin substrate amplitude correction surface of oscillator horn antenna according to claim 1, it is characterized in that the conduction band (15) of microstrip feed line (2) connects with the first metal flat (7), the ground plane (16) of microstrip feed line (2) connects with the second metal flat (8).
3. thin substrate amplitude correction surface of oscillator horn antenna according to claim 1, is characterized in that the width of dielectric-filled waveguide (14) will make electromagnetic wave to propagate and not to be cut off wherein.
4. thin substrate amplitude correction surface of oscillator horn antenna according to claim 1, it is characterized in that selecting the head end (12) of metallization arrays of vias (11) or summit (17) in the inner position of the integrated horn antenna of substrate (3), make the electromagnetic wave power of transmission in each dielectric-filled waveguide (14) equal.
5. thin substrate amplitude correction surface of oscillator horn antenna according to claim 1, it is characterized in that in described metallization via hole trumpet side walls (9) and metallization arrays of vias (11), the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, makes the metallization via hole trumpet side walls (9) of formation and metallization arrays of vias (11) can be equivalent to electric wall.
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| CN201310617311.8A CN103594810B (en) | 2013-11-29 | 2013-11-29 | Thin substrate amplitude correction surface of oscillator horn antenna |
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| CN201310617311.8A CN103594810B (en) | 2013-11-29 | 2013-11-29 | Thin substrate amplitude correction surface of oscillator horn antenna |
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| CN103594810B true CN103594810B (en) | 2016-03-23 |
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| CN201229981Y (en) * | 2008-07-18 | 2009-04-29 | 东南大学 | Multiple mode beam forming network for millimeter wave frequency band |
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| CN101075702B (en) * | 2007-06-19 | 2011-02-16 | 东南大学 | Printing antenna with baseplate integrated waveguide feeder |
| US7808439B2 (en) * | 2007-09-07 | 2010-10-05 | University Of Tennessee Reserch Foundation | Substrate integrated waveguide antenna array |
| US8669834B2 (en) * | 2008-03-18 | 2014-03-11 | Shi Cheng | Substrate integrated waveguide |
| CN102324627B (en) * | 2011-09-06 | 2014-06-18 | 电子科技大学 | Miniaturization substrate integrated multi-beam antenna |
| CN103022716B (en) * | 2012-12-21 | 2015-01-28 | 东南大学 | Planar horn antenna for phase amplitude calibration |
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