CN103606753B - Thin substrate phase amplitude corrects oscillator difference-beam planar horn antenna - Google Patents
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Abstract
Thin substrate phase amplitude corrects oscillator difference-beam planar horn antenna and relates to a kind of horn antenna.This antenna is included in the microstrip feed line (2) on medium substrate (1), horn antenna (3) and oscillator (4), horn antenna (3) is by the first metal flat (7), second metal flat (8) and two row's metallization via hole trumpet side walls (9) compositions, odd number metallization arrays of vias (11) and even number dielectric-filled waveguide (15) is had in horn antenna (3), in horn antenna (3) bore face (10), the width of upper each dielectric-filled waveguide (15) is equal and be connected to an oscillator (4), left half antenna (13) and institute's oscillator that connects (4) and right half antenna (14) and institute's oscillator that connects (4) symmetrical.Electromagnetic wave can arrive oscillator radiation again by constant amplitude homophase, radiation field polarization and substrate-parallel, and this antenna can use thin substrate and gain high, large zero is dark, cost is low and compact conformation.
Description
Technical field
The present invention relates to a kind of horn antenna, especially a kind of thin substrate phase amplitude corrects oscillator difference-beam planar horn antenna.
Background technology
Horn antenna has a wide range of applications in the systems such as satellite communication, terrestrial microwave link and radio telescope.But the huge physical dimension of three-dimensional horn antenna constrains its application and development in planar circuit.In recent years, the proposition of substrate integrated waveguide technology and development well facilitate the development of planar horn antenna.Substrate integration wave-guide have size little, lightweight, be easy to integrated and the advantage such as processing and fabricating.Based on the substrate integration wave-guide planar horn antenna of the plane of substrate integration wave-guide except the feature with horn antenna, also well achieve the miniaturization of horn antenna, lightness, and be easy to be integrated in microwave and millimeter wave planar circuit.Traditional substrate integration wave-guide planar horn antenna have a restriction, the thickness of antenna horn aperture substrate is greater than 1/10th operation wavelengths, and antenna just can have good radiance, not so due to reflection, the energy emission in antenna is not gone out.So just require that the thickness of antenna substrate can not be too thin, L-band etc. comparatively low-frequency range to meet this requirement very difficult especially, very thick substrate not only volume and weight is very large, counteract integrated advantage, but also add cost, the polarised direction of these antenna radiation field is generally all perpendicular to medium substrate in addition, and some application needs the polarization parallel of radiation field in medium substrate.More existing antennas load the radiation that paster improves thin substrate plane horn antenna before planar horn antenna, but the patch size loaded is comparatively large, and working band is narrower.Generally for and realize difference beam, need to adopt special feeder equipment, these feeder equipments or not easily realize in planar circuit, or the phase-shift circuit of arrowband.The gain of substrate integration wave-guide planar horn antenna traditional is in addition relatively low, its reason is because horn mouth constantly opens, Electromagnetic Wave Propagation is caused to occur that phase place is asynchronous to during horn mouth diametric plane, the amplitude distribution of bore electric field strength is also uneven, radiation directivity and gain reduction, make zero of the difference beam antenna formed dark more shallow and slope is lower, affect the direction finding precision of radar.Existing method such as employing coated by dielectric, medium prism etc. at present, correct loudspeaker aperture field, but these methods all can only improve the consistency of PHASE DISTRIBUTION, can not improve the uniformity of amplitude distribution, and these phase alignment structures add the overall structure size of antenna.
Summary of the invention
technical problem:the object of the invention is to propose a kind of thin substrate phase amplitude and correct oscillator difference-beam planar horn antenna, the polarised direction of this radiation field of aerial is parallel with medium substrate, very thin medium substrate manufacture can be used, when the electric very thin thickness of substrate, still there is excellent radiance, and this planar horn antenna can on RECTIFYING ANTENNA bore face electromagnetic phase place and amplitude inconsistent, increase the zero dark and improve the slope of antenna difference beam of antenna difference beam.
technical scheme:thin substrate phase amplitude of the present invention corrects oscillator difference-beam planar horn antenna, it is characterized in that this antenna comprises the microstrip feed line be arranged on medium substrate, the integrated horn antenna of substrate and multiple oscillator; First port of described microstrip feed line is the input/output port of this antenna, and the second port of microstrip feed line connects with the integrated horn antenna of substrate; The integrated horn antenna of substrate to be connected the first metal flat and the second metal flat by the first metal flat being positioned at medium substrate one side, the second metal flat of being positioned at medium substrate another side two row's metallization via hole trumpet side walls with through medium substrate form, width between two row's metallization via hole trumpet side walls of the integrated horn antenna of substrate becomes large gradually, form one tubaeformly to dehisce, the end of dehiscing is the bore face of the integrated horn antenna of substrate; Odd number metallization arrays of vias is had to connect the first metal flat and the second metal flat in the integrated horn antenna of substrate, one end of metallization arrays of vias is inner at the integrated horn antenna of substrate, and the other end of metallization arrays of vias is on the bore face of the integrated horn antenna of substrate; In metallization arrays of vias, there is an intermediate metallization arrays of vias that integrated for substrate horn antenna is divided into a symmetrical left side half antenna and right half antenna two parts; Row's metallization via hole trumpet side walls that two adjacent metallization arrays of vias or a metallization arrays of vias are adjacent, forms dielectric-filled waveguide with the first metal flat and the second metal flat; On the bore face of the integrated horn antenna of substrate, the width of each dielectric-filled waveguide is equal, and outside bore face, each dielectric-filled waveguide is connected to an oscillator.
The conduction band of microstrip feed line connects with the first metal flat, and the ground plane of microstrip feed line connects with the second metal flat.
The shape of described metallization arrays of vias to be connected with tail end broken line three sections by head end broken line, polygon and to form, polygon in metallization arrays of vias can be triangle, quadrangle, pentagon or other polygon, and the shape on a polygonal limit or many limits can be straight line, camber line or other curve; Head end broken line in metallization arrays of vias or the shape of tail end broken line can be straight line, broken line or exponential line etc., and its length can be close to zero or finite length.
The width of dielectric-filled waveguide will make electromagnetic wave to propagate and not to be cut off wherein.
In described metallization arrays of vias, adjust the distance between adjacent two row metallization arrays of vias or the distance between adjustment one row metallization arrays of vias and substrate integration wave-guide horn antenna sidewall metallization via hole, the width of dielectric-filled waveguide can be changed, and then the phase velocity of adjustment Electromagnetic Wave Propagation in this dielectric-filled waveguide (15), make to arrive antenna opening diametric plane power on magnetic wave PHASE DISTRIBUTION evenly.
In described metallization arrays of vias, the length changing row or multiple row metallization arrays of vias can change respective media and fill the length of waveguide, make to arrive antenna opening diametric plane power on magnetic wave PHASE DISTRIBUTION evenly.
Select position in the integrated horn antenna of substrate of head end broken line or polygon in metallization arrays of vias and size, make the electromagnetic wave power that transmits in each dielectric-filled waveguide equal.
Each oscillator has the first radiation arm and the second radiation arm respectively on the two sides being positioned at medium substrate, first radiation arm of oscillator is connected with the first metal flat of the integrated horn antenna of substrate, second radiation arm of oscillator is connected with the second metal flat of the integrated horn antenna of substrate, and the first radiation arm and second radiation arm of each oscillator stretch in the opposite direction.
The direction of extension of the first radiation arm of all oscillators that left half antenna connects is all identical, and the direction of extension of the second radiation arm of all oscillators that left half antenna connects is all identical; The direction of extension of the first radiation arm of all oscillators that right half antenna connects is all identical, and the direction of extension of the second radiation arm of all oscillators that right half antenna connects is all identical; The direction of extension of the first radiation arm of the oscillator that left half antenna connects is identical with the direction of extension of the second radiation arm of the oscillator that right half antenna connects, and the direction of extension of the second radiation arm of the oscillator that left half antenna connects is identical with the direction of extension of the first radiation arm of the oscillator that right half antenna connects.
Metallize in via hole trumpet side walls and metallization arrays of vias, the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, makes the metallization via hole trumpet side walls formed can be equivalent to electric wall with metallization arrays of vias.
In dielectric-filled waveguide, the propagation phase velocity of the main mould of electromagnetic wave (TE10 mould) is relevant with the width of dielectric-filled waveguide, and the width of dielectric-filled waveguide is wider, and the phase velocity that main mould is propagated is lower; Otherwise the width of dielectric-filled waveguide is narrower, the phase velocity that main mould is propagated is higher.Electromagnetic wave inputs from one end of microstrip feed line, and the other end through microstrip feed line enters substrate integration wave-guide horn antenna, after propagating a segment distance, runs into metallization arrays of vias, just enters the transmission of each dielectric-filled waveguide respectively.The position of the adjustment metallization head end broken line of arrays of vias and the position of tail end broken line and length and polygon vertex, just can regulate the relative phase velocity that the relative power entering each dielectric-filled waveguide and electromagnetic wave transmit at each dielectric waveguide, and then adjustment arrives electromagnetic relative amplitude and relative phase on antenna aperture face.
Enter the electromagnetic relative power of each dielectric-filled waveguide primarily of the metallization head end broken line of arrays of vias and the determining positions of polygon vertex, the adjustment metallization head end broken line of arrays of vias and the position of polygon vertex, the electromagnetic relative power transmitted through each dielectric-filled waveguide can be adjusted, and then can ensure that the power transmitted in each dielectric-filled waveguide is equal, because dielectric-filled waveguide each on bore face is connected to the oscillator of a same caliber size, the power entering each element radiates is like this also equal, namely ensure that whole antenna is that constant amplitude width is penetrated, this provides for improved the gain of antenna.
Determine primarily of the length of each dielectric-filled waveguide and width in the power on PHASE DISTRIBUTION of magnetic wave of antenna opening diametric plane, the position of the adjustment metallization head end broken line of arrays of vias and the position of tail end broken line and length and polygon vertex, just can regulate the relative phase velocity that electromagnetic wave transmits at each dielectric waveguide, and then make the bore face being arrived antenna by the electromagnetic wave homophase of each dielectric-filled waveguide, on antenna opening diametric plane, the field intensity amplitude distribution of each dielectric-filled waveguide port is the same with phase place like this.
Electromagnetic wave from each dielectric waveguide enters element radiates by antenna opening diametric plane, because the radiation arm of left half antenna oscillator and the radiation arm of right half antenna oscillator are symmetrical, therefore the polarised direction of left half antenna oscillator radiation field is contrary with the polarised direction of right half antenna oscillator radiation field, so just defines difference beam in the direction of parallel medium substrate.
Just can control in the above described manner to power on the amplitude of magnetic wave and PHASE DISTRIBUTION at antenna opening diametric plane, if the port width remaining on each dielectric-filled waveguide on antenna opening diametric plane is equal, and the position size and shape of adjustment metallization arrays of vias, make to arrive antenna opening diametric plane by the electromagnetic same width homophase of each dielectric-filled waveguide transmission, and then enter each element radiates with width homophase, the polarised direction of radiation field also becomes and connects subparallel horizontal direction with substrate, so not only can make when the thin substrate of electricity, whole antenna has excellent radiance, and reach the raising aperture efficiency of antenna and the object of gain.
Owing to there being multiple metallization arrays of vias that the bore face of antenna is divided into a lot of little bore faces, it is very little that the size of the oscillator that each osculum diametric plane connects can be done, and compact conformation, the size of such antenna also only increase seldom.
Antenna is between feeding microstrip line to oscillator, and be all closed substrate integrated wave guide structure, therefore feeder loss is less.
In like manner also can realize specific field intensity amplitude and PHASE DISTRIBUTION as required on the bore face of antenna.
beneficial effect:the beneficial effect that the thin substrate phase amplitude of the present invention corrects oscillator difference-beam planar horn antenna is that the polarised direction of this radiation field of aerial is parallel with medium substrate; This antenna can use the medium substrate manufacture of thickness of wavelength lower than 2 percent, far below the substrate thickness of 1/10th wavelength required by usual planar horn antenna, when the electric very thin thickness of substrate, still there is excellent radiance, such as in 6GHz frequency, adopt the thickness of epoxide resin material substrate can be reduced to 0.5mm by 2.5mm, thus greatly reduce size, weight and cost; And this planar horn antenna inside be embedded with metallization arrays of vias can on RECTIFYING ANTENNA bore face electromagnetic phase place and amplitude inconsistent, increase the zero dark and improve the slope of antenna difference beam of antenna difference beam, compact conformation, the feeder loss of antenna are little.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the present invention is further described.
Fig. 1 is the structural representation that the thin substrate phase amplitude of the present invention corrects oscillator difference-beam planar horn antenna.
Have in figure: the integrated horn antenna 3 of medium substrate 1, microstrip feed line 2, substrate, oscillator 4, first port 5 of microstrip feed line 2, second port 6 of microstrip feed line 2, first metal flat 7 of medium substrate 1, second metal flat 8 of medium substrate 1, metallization via hole trumpet side walls 9, the bore face 10 of the integrated horn antenna 3 of substrate, metallization arrays of vias 11, intermediate metallization arrays of vias 12, left half antenna 13, right half antenna 14, dielectric-filled waveguide 15, the conduction band 16 of microstrip feed line 2, the ground plane 17 of microstrip feed line 2, head end broken line 18, polygon 19, tail end broken line 20, first radiation arm 21 of oscillator 4 and the second radiation arm 22 of oscillator 4.
Embodiment
Embodiment of the present invention is: thin substrate phase amplitude corrects oscillator difference-beam planar horn antenna and comprises the microstrip feed line 2 be arranged on medium substrate 1, the integrated horn antenna of substrate 3 and multiple oscillator 4; First port 5 of described microstrip feed line 2 is input/output ports of this antenna, and the second port 6 of microstrip feed line 2 connects with the integrated horn antenna 3 of substrate; The integrated horn antenna 3 of substrate to be connected the first metal flat 7 and the second metal flat 8 by the first metal flat 7 being positioned at medium substrate 1 one side, the second metal flat 8 of being positioned at medium substrate 1 another side two row's metallization via hole trumpet side walls 9 with through medium substrate 1 form, width between two row's metallization via hole trumpet side walls 9 of the integrated horn antenna of substrate 3 becomes large gradually, form one tubaeformly to dehisce, the end of dehiscing is the bore face 10 of the integrated horn antenna 3 of substrate; Odd number metallization arrays of vias 11 is had to connect the first metal flat 7 and the second metal flat 8 in the integrated horn antenna 3 of substrate, one end of metallization arrays of vias 11 is inner at the integrated horn antenna 3 of substrate, and the other end of metallization arrays of vias 11 is on the bore face 10 of the integrated horn antenna 3 of substrate; In metallization arrays of vias 11, there is an intermediate metallization arrays of vias 12 that integrated for substrate horn antenna 3 is divided into a symmetrical left side half antenna 13 and right half antenna 14 two parts; Row's metallization via hole trumpet side walls 9 that two adjacent metallization arrays of vias 11 or a metallization arrays of vias 11 are adjacent, forms dielectric-filled waveguide 15 with the first metal flat 7 and the second metal flat 8; On the bore face 10 of the integrated horn antenna 3 of substrate, the width of each dielectric-filled waveguide 15 is equal, and in bore face 10, outer each dielectric-filled waveguide 15 is connected to an oscillator 4.
The conduction band 16 of microstrip feed line 2 connects with the first metal flat 7, and the ground plane 17 of microstrip feed line 2 connects with the second metal flat 8.
The shape of described metallization arrays of vias 11 to be connected with tail end broken line 20 3 sections by head end broken line 18, polygon 19 and to form, polygon 19 in metallization arrays of vias 11 can be triangle, quadrangle, pentagon or other polygon, and a limit of polygon 19 or the shape on many limits can be straight line, camber line or other curve; Head end broken line 18 in metallization arrays of vias 11 or the shape of tail end broken line 20 can be straight line, broken line or exponential line etc., and its length can be close to zero or finite length.
The width of dielectric-filled waveguide 15 will make electromagnetic wave to propagate and not to be cut off wherein.
In described metallization arrays of vias 11, adjust the distance between adjacent two row metallization arrays of vias 11 or the distance between adjustment one row metallization arrays of vias 11 and substrate integration wave-guide horn antenna 3 sidewall metallization via hole 9, the width of dielectric-filled waveguide 15 can be changed, and then adjustment phase velocity of Electromagnetic Wave Propagation in this dielectric-filled waveguide 15, make to arrive electromagnetic PHASE DISTRIBUTION on antenna opening diametric plane 10 evenly.
In described metallization arrays of vias 11, the length changing row or multiple row metallization arrays of vias 11 can change respective media and fill the length of waveguide 15, make to arrive electromagnetic PHASE DISTRIBUTION on antenna opening diametric plane 10 evenly.
Select position in the integrated horn antenna 3 of substrate of head end broken line 18 or polygon 19 in metallization arrays of vias 11 and size, make the electromagnetic wave power of transmission in each dielectric-filled waveguide 15 equal.
Each oscillator 4 has the first radiation arm 21 and the second radiation arm 22 respectively on the two sides being positioned at medium substrate 1, first radiation arm 21 of oscillator 4 is connected with the first metal flat 7 of the integrated horn antenna 3 of substrate, second radiation arm 22 of oscillator 4 is connected with the second metal flat 8 of the integrated horn antenna 3 of substrate, and the first radiation arm 21 of each oscillator 4 and the second radiation arm 22 stretch in the opposite direction.
The direction of extension of the first radiation arm 21 of all oscillators 4 that left half antenna 13 connects is all identical, and the direction of extension of the second radiation arm 22 of all oscillators 4 that left half antenna 13 connects is all identical; The direction of extension of the first radiation arm 21 of all oscillators 4 that right half antenna 14 connects is all identical, and the direction of extension of the second radiation arm 22 of all oscillators 4 that right half antenna 14 connects is all identical; The direction of extension of the first radiation arm 21 of the oscillator 4 that left half antenna 13 connects is identical with the direction of extension of the second radiation arm 22 of the oscillator 4 that right half antenna 14 connects, and the direction of extension of the second radiation arm 22 of the oscillator 4 that left half antenna 13 connects is identical with the direction of extension of the first radiation arm 21 of the oscillator 4 that right half antenna 14 connects.
Described metallization via hole trumpet side walls 9 is with in metallization arrays of vias 11, the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, makes the metallization via hole trumpet side walls 9 formed can be equivalent to electric wall with metallization arrays of vias 11.
When designing, in metallization arrays of vias 11, the relative position of head end broken line 18 in the integrated horn antenna 3 of substrate determines that electromagnetic wave enters the principal element of the relative power size in each dielectric-filled waveguide 15.Regulate electromagnetic wave will change the width of dielectric-filled waveguide 15 in the phase velocity of dielectric-filled waveguide 15, because polygon 19 is at the middle part of metallization arrays of vias 11, and substantially do not have electromagnetic wave to enter due to the inside of polygon 19, therefore size and the position on some limit of polygon 19 is only changed, can only have an impact to a dielectric-filled waveguide 15 constructed by this metallization arrays of vias 11, and very little on the impact of another dielectric-filled waveguide 15 built by this metallization arrays of vias 11.Regulating phase velocity on the impact of the relative power size entered in each dielectric-filled waveguide 15 to reduce like this, usually adopting and changing the shape of polygon 19 and the method for size in metallization arrays of vias 11,
In technique, thin substrate phase amplitude corrects oscillator difference-beam planar horn antenna both can adopt common printed circuit board (PCB) (PCB) technique, and the integrated circuit technologies such as LTCC (LTCC) technique or CMOS, Si substrate also can be adopted to realize.The via hole that wherein metallizes can be hollow metal through hole also can be solid metal hole, and also can be continuous print metallization wall, the shape of metal throuth hole can be circular, also can be square or other shapes.
Structurally, according to same principle, can increase or reduce the quantity of metallization arrays of vias 11, and then change quantity and the size of oscillator 4, as long as ensure that dielectric-filled waveguide 15 can transmit main mould.Due to the metallization via sidewall 9 the closer to antenna, the distance that electromagnetic wave arrives antenna opening diametric plane 10 is far away, therefore relative to from the dielectric-filled waveguide 15 away from metallization via sidewall 9, from the width relative narrower of dielectric-filled waveguide 15 close to metallization via sidewall 9 to obtain higher electromagnetic transmission phase velocity.
According to the above, just the present invention can be realized.
Claims (8)
1. thin substrate phase amplitude corrects oscillator difference-beam planar horn antenna, it is characterized in that this antenna comprises the microstrip feed line (2) be arranged on medium substrate (1), the integrated horn antenna of substrate (3) and multiple oscillator (4); First port (5) of described microstrip feed line (2) is the input/output port of this antenna, and second port (6) of microstrip feed line (2) connects with the integrated horn antenna of substrate (3); The integrated horn antenna of substrate (3) to be connected the first metal flat (7) and the second metal flat (8) by the first metal flat (7) being positioned at medium substrate (1) one side, the second metal flat (8) of being positioned at medium substrate (1) another side two rows with through medium substrate (1) via hole trumpet side walls (9) that metallizes forms, width between two rows' metallization via hole trumpet side walls (9) of the integrated horn antenna of substrate (3) becomes large gradually, form one tubaeformly to dehisce, the end of dehiscing is the bore face (10) of the integrated horn antenna of substrate (3); Odd number metallization arrays of vias (11) is had to connect the first metal flat (7) and the second metal flat (8) in the integrated horn antenna of substrate (3), one end of metallization arrays of vias (11) is inner at the integrated horn antenna of substrate (3), and the other end of metallization arrays of vias (11) is on the bore face (10) of the integrated horn antenna of substrate (3); In metallization arrays of vias (11), there is an intermediate metallization arrays of vias (12) that integrated for substrate horn antenna (3) is divided into a symmetrical left side half antenna (13) and right half antenna (14) two parts; Row's metallization via hole trumpet side walls (9) that two adjacent metallization arrays of vias (11) or metallization arrays of vias (11) are adjacent, forms dielectric-filled waveguide (15) with the first metal flat (7) and the second metal flat (8); On the bore face (10) of the integrated horn antenna of substrate (3), the width of each dielectric-filled waveguide (15) is equal, is connected to an oscillator (4) at bore face (10) upper each dielectric-filled waveguide (15) through the broadband line such as a section;
The thickness of medium substrate (1) lower than 2 percent wavelength;
Each oscillator (4) has the first radiation arm (21) and the second radiation arm (22) respectively on the two sides being positioned at medium substrate (1), first radiation arm (21) of oscillator (4) is connected with first metal flat (7) of the integrated horn antenna of substrate (3), second radiation arm (22) of oscillator (4) is connected with second metal flat (8) of the integrated horn antenna of substrate (3), and the first radiation arm (21) and second radiation arm (22) of each oscillator (4) stretch in the opposite direction;
The direction of extension of first radiation arm (21) of all oscillators (4) that left half antenna (13) connects is all identical, and the direction of extension of second radiation arm (22) of all oscillators (4) that left half antenna (13) connects is all identical;
The direction of extension of first radiation arm (21) of all oscillators (4) that right half antenna (14) connects is all identical, and the direction of extension of second radiation arm (22) of all oscillators (4) that right half antenna (14) connects is all identical;
The direction of extension of first radiation arm (21) of the oscillator (4) that left half antenna (13) connects is identical with the direction of extension of second radiation arm (22) of the oscillator (4) that right half antenna (14) connects, and the direction of extension of second radiation arm (22) of the oscillator (4) that left half antenna (13) connects is identical with the direction of extension of first radiation arm (21) of the oscillator (4) that right half antenna (14) connects.
2. thin substrate phase amplitude according to claim 1 corrects oscillator difference-beam planar horn antenna, it is characterized in that the conduction band (16) of microstrip feed line (2) connects with the first metal flat (7), the ground plane (17) of microstrip feed line (2) connects with the second metal flat (8).
3. thin substrate phase amplitude according to claim 1 corrects oscillator difference-beam planar horn antenna, it is characterized in that the shape of described metallization arrays of vias (11) to be connected with end section (20) three sections successively by head portion (18), polygon (19) to form, the polygon (19) in metallization arrays of vias (11) be triangle, polygon that quadrangle, pentagon or other limit number are greater than five; Head portion (18) in metallization arrays of vias (11) or the shape of end section (20) are straight line, broken line or exponential line, and its length can be close to zero or finite length.
4. thin substrate phase amplitude according to claim 1 corrects oscillator difference-beam planar horn antenna, it is characterized in that the width of dielectric-filled waveguide (15) will make electromagnetic wave to propagate and not to be cut off wherein.
5. thin substrate phase amplitude according to claim 1 corrects oscillator difference-beam planar horn antenna, it is characterized in that in described metallization arrays of vias (11), adjust the distance between adjacent two row metallization arrays of vias (11), or the distance between adjustment one row metallization arrays of vias (11) and substrate integration wave-guide horn antenna (3) sidewall metallization via hole (9), the width of dielectric-filled waveguide (15) can be changed, and then the phase velocity of adjustment Electromagnetic Wave Propagation in this dielectric-filled waveguide (15), make to arrive the upper electromagnetic PHASE DISTRIBUTION of antenna opening diametric plane (10) evenly.
6. thin substrate phase amplitude according to claim 1 corrects oscillator difference-beam planar horn antenna, it is characterized in that in described metallization arrays of vias (11), the length changing row or multiple row metallization arrays of vias (11) can change the length that respective media fills waveguide (15), make to arrive the upper electromagnetic PHASE DISTRIBUTION of antenna opening diametric plane (10) evenly.
7. the thin substrate phase amplitude according to claim 1 or 3 corrects oscillator difference-beam planar horn antenna, it is characterized in that selecting head end in metallization arrays of vias (11)
part(18) or the position of polygon (19) in the integrated horn antenna of substrate (3) and size, make the electromagnetic wave power of transmission in each dielectric-filled waveguide (15) equal.
8. thin substrate phase amplitude according to claim 1 corrects oscillator difference-beam planar horn antenna, it is characterized in that in described metallization via hole trumpet side walls (9) and metallization arrays of vias (11), the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, makes the metallization via hole trumpet side walls (9) of formation and metallization arrays of vias (11) can be equivalent to electric wall.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101075702A (en) * | 2007-06-19 | 2007-11-21 | 东南大学 | Printing antenna with baseplate integrated waveguide feeder |
| CN103022715A (en) * | 2012-12-21 | 2013-04-03 | 东南大学 | Planar horn antenna for phase calibration |
| CN103022716A (en) * | 2012-12-21 | 2013-04-03 | 东南大学 | Planar horn antenna for phase amplitude calibration |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101075702A (en) * | 2007-06-19 | 2007-11-21 | 东南大学 | Printing antenna with baseplate integrated waveguide feeder |
| CN103022715A (en) * | 2012-12-21 | 2013-04-03 | 东南大学 | Planar horn antenna for phase calibration |
| CN103022716A (en) * | 2012-12-21 | 2013-04-03 | 东南大学 | Planar horn antenna for phase amplitude calibration |
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