CN103594562B - 一种cigs太阳能电池吸收层的生产设备 - Google Patents
一种cigs太阳能电池吸收层的生产设备 Download PDFInfo
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- CN103594562B CN103594562B CN201310627390.0A CN201310627390A CN103594562B CN 103594562 B CN103594562 B CN 103594562B CN 201310627390 A CN201310627390 A CN 201310627390A CN 103594562 B CN103594562 B CN 103594562B
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- Prior art keywords
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- selenizing
- selenium
- production equipment
- steam
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000011669 selenium Substances 0.000 claims abstract description 43
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 42
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 39
- 238000001816 cooling Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims abstract description 19
- 238000002347 injection Methods 0.000 claims abstract description 19
- 239000007924 injection Substances 0.000 claims abstract description 19
- 229910052756 noble gas Inorganic materials 0.000 claims abstract description 15
- 239000007921 spray Substances 0.000 claims abstract description 6
- 238000005507 spraying Methods 0.000 claims description 14
- 238000005336 cracking Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 150000003342 selenium Chemical class 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- 238000005192 partition Methods 0.000 claims description 2
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- 125000006850 spacer group Chemical group 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310627390.0A CN103594562B (zh) | 2013-11-29 | 2013-11-29 | 一种cigs太阳能电池吸收层的生产设备 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310627390.0A CN103594562B (zh) | 2013-11-29 | 2013-11-29 | 一种cigs太阳能电池吸收层的生产设备 |
Publications (2)
Publication Number | Publication Date |
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CN103594562A CN103594562A (zh) | 2014-02-19 |
CN103594562B true CN103594562B (zh) | 2016-09-28 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201310627390.0A Active CN103594562B (zh) | 2013-11-29 | 2013-11-29 | 一种cigs太阳能电池吸收层的生产设备 |
Country Status (1)
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CN (1) | CN103594562B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104993020B (zh) * | 2015-07-23 | 2017-01-04 | 南京汉能薄膜太阳能有限公司 | 可提高硒化质量的硒化反应装置及进行硒化反应的方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102185024A (zh) * | 2011-04-01 | 2011-09-14 | 湘潭大学 | 一种处理制备cigs太阳能电池吸收层的硒化炉及制备方法 |
CN102983216A (zh) * | 2012-11-22 | 2013-03-20 | 深圳首创光伏有限公司 | 制造cigs薄膜太阳能电池的吸收层的反应装置及方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3249408B2 (ja) * | 1996-10-25 | 2002-01-21 | 昭和シェル石油株式会社 | 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置 |
-
2013
- 2013-11-29 CN CN201310627390.0A patent/CN103594562B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102185024A (zh) * | 2011-04-01 | 2011-09-14 | 湘潭大学 | 一种处理制备cigs太阳能电池吸收层的硒化炉及制备方法 |
CN102983216A (zh) * | 2012-11-22 | 2013-03-20 | 深圳首创光伏有限公司 | 制造cigs薄膜太阳能电池的吸收层的反应装置及方法 |
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CN103594562A (zh) | 2014-02-19 |
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C14 | Grant of patent or utility model | ||
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CP02 | Change in the address of a patent holder |
Address after: 545006 the Guangxi Zhuang Autonomous Region Liuzhou Liu Dong New Area Bay Road No. 2 East standard workshop No. 2 supporting office building No. 314 Patentee after: Liuzhou Bairente Advanced Materials Co., Ltd. Address before: 545006 the Guangxi Zhuang Autonomous Region, Liuzhou high tech Road, No. 1 standard workshop D East, building 5, floor, floor, Patentee before: Liuzhou Bairente Advanced Materials Co., Ltd. |
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Effective date of registration: 20200330 Address after: 547000 No.71, Chengxi Road, Hechi City, Guangxi Zhuang Autonomous Region Patentee after: GUANGXI HUAXI GROUP Co.,Ltd. Address before: 545006 the Guangxi Zhuang Autonomous Region Liuzhou Liu Dong New Area Bay Road No. 2 East standard workshop No. 2 supporting office building No. 314 Patentee before: LIUZHOU BAIRENTE ADVANCED MATERIALS Co.,Ltd. |