CN103594556A - 在硅基材表面形成二氧化硅薄膜的方法、晶体硅电池的制备方法及晶体硅电池 - Google Patents
在硅基材表面形成二氧化硅薄膜的方法、晶体硅电池的制备方法及晶体硅电池 Download PDFInfo
- Publication number
- CN103594556A CN103594556A CN201310573983.3A CN201310573983A CN103594556A CN 103594556 A CN103594556 A CN 103594556A CN 201310573983 A CN201310573983 A CN 201310573983A CN 103594556 A CN103594556 A CN 103594556A
- Authority
- CN
- China
- Prior art keywords
- silicon
- silica membrane
- silicon substrate
- hydrogen
- silicon chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 179
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 172
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 172
- 239000010703 silicon Substances 0.000 title claims abstract description 172
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 63
- 239000000758 substrate Substances 0.000 title claims abstract description 60
- 235000012239 silicon dioxide Nutrition 0.000 title abstract description 18
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 4
- 239000001257 hydrogen Substances 0.000 claims abstract description 46
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 46
- 239000013078 crystal Substances 0.000 claims abstract description 45
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 40
- 238000006243 chemical reaction Methods 0.000 claims abstract description 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000002210 silicon-based material Substances 0.000 claims abstract description 17
- 239000012528 membrane Substances 0.000 claims description 75
- 239000001301 oxygen Substances 0.000 claims description 41
- 229910052760 oxygen Inorganic materials 0.000 claims description 41
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 39
- 238000002360 preparation method Methods 0.000 claims description 23
- 239000007789 gas Substances 0.000 claims description 21
- 238000009792 diffusion process Methods 0.000 claims description 13
- 230000001681 protective effect Effects 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 235000008216 herbs Nutrition 0.000 claims description 6
- 150000002431 hydrogen Chemical class 0.000 claims description 6
- 210000002268 wool Anatomy 0.000 claims description 6
- 230000035484 reaction time Effects 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000012535 impurity Substances 0.000 abstract description 16
- 230000007547 defect Effects 0.000 abstract description 13
- 230000036632 reaction speed Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 9
- 238000002161 passivation Methods 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000005245 sintering Methods 0.000 description 8
- 238000007639 printing Methods 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- 239000003595 mist Substances 0.000 description 6
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 description 3
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 description 3
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 3
- 229910001424 calcium ion Inorganic materials 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 229910001425 magnesium ion Inorganic materials 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229910001415 sodium ion Inorganic materials 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 240000004859 Gamochaeta purpurea Species 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000008398 formation water Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
光电转换效率 | 效率衰减 | |
实施例1 | 19.44% | 1.0% |
实施例2 | 19.45% | 0.9% |
实施例3 | 19.48% | 0.74% |
实施例4 | 19.55% | 0.76% |
实施例5 | 19.62% | 0.7% |
对比例1 | 19.3% | 1.1% |
对比例2 | 19.1% | 3% |
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310573983.3A CN103594556B (zh) | 2013-11-15 | 2013-11-15 | 在硅基材表面形成二氧化硅薄膜的方法、晶体硅电池的制备方法及晶体硅电池 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310573983.3A CN103594556B (zh) | 2013-11-15 | 2013-11-15 | 在硅基材表面形成二氧化硅薄膜的方法、晶体硅电池的制备方法及晶体硅电池 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103594556A true CN103594556A (zh) | 2014-02-19 |
CN103594556B CN103594556B (zh) | 2016-03-30 |
Family
ID=50084622
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310573983.3A Active CN103594556B (zh) | 2013-11-15 | 2013-11-15 | 在硅基材表面形成二氧化硅薄膜的方法、晶体硅电池的制备方法及晶体硅电池 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103594556B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106611807A (zh) * | 2016-11-28 | 2017-05-03 | 江苏福克斯新能源科技有限公司 | 一种抗pid效应晶体硅太阳能电池的制作方法 |
CN106972067A (zh) * | 2017-05-09 | 2017-07-21 | 无锡赛晶太阳能有限公司 | 一种多晶硅太阳能电池 |
CN113161448A (zh) * | 2021-03-18 | 2021-07-23 | 浙江爱旭太阳能科技有限公司 | 晶体硅太阳能电池钝化层及其制备方法、电池 |
CN118588773A (zh) * | 2024-08-02 | 2024-09-03 | 浙江日月光能科技有限公司 | 一种提高电池片耐uv衰减性能的电池片结构及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020136831A1 (en) * | 1997-07-11 | 2002-09-26 | Gronet Christian M. | Method and apparatus for insitu vapor generation |
CN101447529A (zh) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | 一种选择性发射极太阳电池制造过程中的氧化硅生成工艺 |
CN102154708A (zh) * | 2010-12-31 | 2011-08-17 | 常州天合光能有限公司 | 一种太阳能电池薄膜的生长方法 |
-
2013
- 2013-11-15 CN CN201310573983.3A patent/CN103594556B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020136831A1 (en) * | 1997-07-11 | 2002-09-26 | Gronet Christian M. | Method and apparatus for insitu vapor generation |
CN101447529A (zh) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | 一种选择性发射极太阳电池制造过程中的氧化硅生成工艺 |
CN102154708A (zh) * | 2010-12-31 | 2011-08-17 | 常州天合光能有限公司 | 一种太阳能电池薄膜的生长方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106611807A (zh) * | 2016-11-28 | 2017-05-03 | 江苏福克斯新能源科技有限公司 | 一种抗pid效应晶体硅太阳能电池的制作方法 |
CN106972067A (zh) * | 2017-05-09 | 2017-07-21 | 无锡赛晶太阳能有限公司 | 一种多晶硅太阳能电池 |
CN113161448A (zh) * | 2021-03-18 | 2021-07-23 | 浙江爱旭太阳能科技有限公司 | 晶体硅太阳能电池钝化层及其制备方法、电池 |
CN118588773A (zh) * | 2024-08-02 | 2024-09-03 | 浙江日月光能科技有限公司 | 一种提高电池片耐uv衰减性能的电池片结构及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103594556B (zh) | 2016-03-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI532824B (zh) | Single crystal silicon chip velvet additive, velveteen and its velvet method | |
CN110459642B (zh) | 钝化接触电池及其制备方法 | |
CN103594556B (zh) | 在硅基材表面形成二氧化硅薄膜的方法、晶体硅电池的制备方法及晶体硅电池 | |
CN105895738A (zh) | 一种钝化接触n型太阳能电池及制备方法和组件、系统 | |
Aurang et al. | ZnO nanorods as antireflective coatings for industrial‐scale single‐crystalline silicon solar cells | |
CN103632934B (zh) | N 型硅片的硼扩散方法、晶体硅太阳能电池及其制作方法 | |
CN105304753A (zh) | N型电池硼扩散工艺 | |
CN206864484U (zh) | 一种钝化接触太阳能电池 | |
CN110620159B (zh) | 一种P-TOPCon光伏太阳能电池结构的制备方法 | |
CN103632933B (zh) | N型硅片的硼扩散方法、晶体硅太阳能电池及其制作方法 | |
CN102842646A (zh) | 一种基于n型衬底的ibc电池的制备方法 | |
CN207705205U (zh) | 一种背接触太阳能电池 | |
CN103413840A (zh) | 一种抗pid效应的晶体硅太阳能电池及其制备方法 | |
CN107785456A (zh) | 一种背接触太阳能电池的制备方法 | |
CN105140306A (zh) | 抗pid效应的太阳能电池结构及生产方法 | |
CN104882516A (zh) | 一种高温低压的硅片扩散方法 | |
CN112382672A (zh) | 一种perc双面太阳能电池及其制作方法 | |
CN102263153A (zh) | 一种改进太阳能电池的扩散方法 | |
CN204668282U (zh) | 一种高温低压扩散装置 | |
CN103633190A (zh) | 晶体硅太阳能电池的硼扩散装置及方法 | |
CN111029441A (zh) | 一种栅线钝化接触perc太阳能电池及其制备方法 | |
CN102683483B (zh) | 一种晶硅太阳能电池去死层方法 | |
CN116949429A (zh) | 一种提高ald膜厚均匀性的方法 | |
CN106328736A (zh) | 一种抗lid黑硅太阳能高效电池及其生产方法 | |
CN102237433A (zh) | 晶体硅太阳能电池的液体氧化钝化方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160216 Address after: 071051, No. 3, unit 3, 15 Swan Road, 102 downtown, Xinshi District, Hebei, Baoding Applicant after: Xu Zhuo Address before: 071051 Chaoyang North Street, Hebei, Baoding, No. 3399 Applicant before: Yingli Group Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190830 Address after: 071051 Chaoyang North Street, Hebei, Baoding, No. 3399 Patentee after: Yingli Energy (China) Co., Ltd. Address before: 071051, No. 3, unit 3, 15 Swan Road, 102 downtown, Xinshi District, Hebei, Baoding Patentee before: Xu Zhuo |
|
TR01 | Transfer of patent right |