CN103579356A - Oxide TFT, manufacturing method of oxide TFT, display panel and display device - Google Patents
Oxide TFT, manufacturing method of oxide TFT, display panel and display device Download PDFInfo
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- CN103579356A CN103579356A CN201210285337.2A CN201210285337A CN103579356A CN 103579356 A CN103579356 A CN 103579356A CN 201210285337 A CN201210285337 A CN 201210285337A CN 103579356 A CN103579356 A CN 103579356A
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- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000004888 barrier function Effects 0.000 claims description 17
- 239000007769 metal material Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 238000009413 insulation Methods 0.000 claims description 14
- 239000000428 dust Substances 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052755 nonmetal Inorganic materials 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 description 19
- 239000000203 mixture Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 238000002161 passivation Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000583 Nd alloy Inorganic materials 0.000 description 1
- VVTQWTOTJWCYQT-UHFFFAOYSA-N alumane;neodymium Chemical compound [AlH3].[Nd] VVTQWTOTJWCYQT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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Abstract
The invention discloses an oxide TFT. The oxide TFT comprise a source electrode, a drain electrode, an oxide active layer, a grid insulating layer, a grid electrode and a shading layer, wherein the shading layer is formed on a substrate, the grid electrode is formed on the shading layer, the grid insulating layer covers the substrate where the grid electrode is formed, the oxide active layer is formed on the grid insulating layer, and the graphic size of the shading layer is larger than the graphic size of the grid electrode. The invention further discloses a manufacturing method of the oxide TFT, a corresponding display panel and a display device. According to the oxide TFT, the manufacturing method of the oxide TFT, the display panel and the display device, influence of the incident light on the back portion of the display panel on the property of the oxide TFT can be avoided, and stability of the oxide TFT is improved.
Description
Technical field
The present invention relates to technical field of liquid crystal display, relate in particular to a kind of sull field-effect transistor (Oxide TFT) and preparation method thereof, display floater and display unit.
Background technology
At present, oxide TFT is mainly Zinc oxide based film field-effect transistor, and its mobility ratio amorphous silicon transistor is high one more than the order of magnitude, and the transparency of visible ray is greater than to 80%, is one of the most promising thin-film transistor of future generation.
In prior art, the major reason of restriction oxide TFT output development is: the metal oxide materials in oxide TFT, and as stable not in indium gallium zinc oxide (IGZO) etc., be subject to external influence larger.The irradiation of ambient light can affect the electric property of metal oxide, causes the increase of leakage current.
Existing oxide TFT comprises: source electrode 2, drain 6, oxide active layer 3 and grid 4.Wherein, the material that described oxide active layer 3 adopts is specially metal oxide materials mentioned above, as IGZO etc.As shown in Figure 1, when being provided with the display floater of oxide TFT and showing, exist a part of light from the back incident of display floater, the angle of gradient by source electrode 2 and drain electrode 6 is refracted to the surface of grid 4, then reflexes on oxide active layer 3.To have a strong impact on the overall performance of oxide TFT like this, thereby reduced the stability of display floater.
Summary of the invention
In view of this, main purpose of the present invention is to provide a kind of oxide TFT and preparation method thereof, display floater and display unit, and the impact of the back incident light that can avoid display floater on oxide TFT characteristic improves the stability of oxide TFT.
For achieving the above object, technical scheme of the present invention is achieved in that
The invention provides a kind of oxide TFT, be formed on substrate, described oxide TFT comprises: source electrode, drain electrode, oxide active layer, gate insulation layer and grid, and light shield layer; Light shield layer is formed on described substrate; Described grid is formed on described light shield layer, and described gate insulation layer is covered on the substrate that is formed with described grid, and described oxide active layer is formed on described gate insulation layer;
The dimension of picture of described light shield layer is greater than the dimension of picture of described grid.
Wherein, the dimension of picture of described light shield layer is greater than or equal to the dimension of picture of described source electrode and drain electrode.
Wherein, between described light shield layer and described grid, be provided with insulating barrier.
Wherein, described light shield layer is lighttight metal, and the thickness of described light shield layer is: 1000 dust～5000 dusts.
Wherein, described light shield layer is lighttight nonmetal, and the thickness of described light shield layer is: 1000 dust～10000 dusts.
Further, described oxide TFT also comprises and being formed on described oxide active layer, and the barrier layer between described source electrode and drain electrode.
The present invention also provides a kind of display floater, and the TFT in described array base palte adopts oxide TFT as above.
The present invention also provides a kind of display unit, comprises display floater as above.
The present invention also provides the preparation method of a kind of oxide TFT, and the method also comprises:
On substrate, form light shield layer;
On described light shield layer, form grid; The dimension of picture of described light shield layer is greater than the dimension of picture of described grid;
Sequentially form oxide active layer and source electrode, drain electrode.
Wherein, the dimension of picture of described light shield layer is greater than or equal to the dimension of picture of described source electrode and drain electrode.
Wherein, described light shield layer is lighttight metal, adopts magnetically controlled sputter method deposit metallic material, uses mask board to explosure, and adopts wet etching to form the figure of light shield layer, forms insulating barrier on light shield layer, and then forms grid.
Oxide TFT provided by the invention and preparation method thereof, display floater and display unit, before forming grid 4, one deck light shield layer 1 is first set, and the dimension of picture of described light shield layer 1 is greater than the dimension of picture of described grid 4, therefore described light shield layer 1 can block from the light of display floater back incident, avoid the direct irradiation to the angle of gradient of source electrode in oxide TFT 2 and drain electrode 6, and then reduced from the described angle of gradient and reflexed to the light the oxide active layer 3 of oxide TFT, therefore, stability as the metal oxide of oxide active layer 3 is guaranteed, thereby improved the stability of oxide TFT.
In addition; the dimension of picture of light shield layer 1 of the present invention specifically can be more than or equal to the dimension of picture of described source electrode 2 and drain electrode 6; like this; light shield layer 1 can block the whole light that incide source electrode 2 and drain electrode 6 from the back of display floater; avoid light to incide source electrode 2, drain after 6, through multiple reflections, finally incide the situation of oxide active layer 3, thereby protected oxide active layer 3; therefore can further guarantee the stability of oxide TFT, the also corresponding quality that improves display floater.
Accompanying drawing explanation
Schematic diagram when Fig. 1 is the incident light irradiation of the shown panel of existing oxide TFT back;
Fig. 2 is the structural representation of oxide TFT the first embodiment of the present invention;
Fig. 3 is the structural representation of oxide TFT the second embodiment of the present invention;
Fig. 4 is the structural representation of oxide TFT the 3rd embodiment of the present invention;
Fig. 5 is the structural representation of oxide TFT the 4th embodiment of the present invention.
Description of reference numerals:
1, light shield layer; 2, source electrode; 3, oxide active layer; 4, grid; 5, gate insulation layer; 6, drain electrode; 7, substrate; 8, insulating barrier.
Embodiment
Basic thought of the present invention is: before forming grid 4, the light shield layer 1 that one deck light screening material forms is first set; The dimension of picture of described light shield layer 1 is greater than the dimension of picture of described grid 4.
Below in conjunction with drawings and the specific embodiments, the present invention is described in further detail.
As shown in Figure 2, Fig. 2 is the structural representation of oxide TFT the first embodiment of the present invention.
First embodiment of the invention oxide TFT is formed on substrate 7, and described oxide TFT comprises: source electrode 2, drain 6, oxide active layer 3, gate insulation layer 5 and grid 4, and light shield layer 1.Certainly, the position of source electrode described in the present invention 2 and drain electrode 6 can exchange.
The dimension of picture of described light shield layer 1 is greater than the dimension of picture of described grid 4.
Described light shield layer 1 can adopt lighttight metal material or lighttight nonmetallic materials to form.
While adopting metal material due to light shield layer 1, when light shield layer 1 contacts with grid 4, may form electric capacity with other layer, for fear of the problems referred to above, the lighttight nonmetallic materials that the light shield layer 1 of first embodiment of the invention oxide TFT can adopt.For example: silicon dioxide, resin, the light-proof materials such as coloring material.
The dimension of picture of the light shield layer 1 of first embodiment of the invention oxide TFT is greater than the dimension of picture of described grid 4; as can be seen from Figure 2; light shield layer 1 can block from the back of display floater be directly incident on source electrode 2, the light of 6 the angle of gradient of draining; and then reduced from the described angle of gradient and reflexed to the light the oxide active layer 3 of oxide TFT; protect oxide active layer 3, improved the stability of oxide TFT.
The standard that arranges of the feature size of the light shield layer 1 of first embodiment of the invention oxide TFT is: light shield layer 1 must be able to block from the light of display floater back directive source electrode 2,6 the angle of gradient of draining, be the dimension of picture that the dimension of picture of light shield layer 1 is greater than grid 4, in the situation that not affecting aperture opening ratio, the figure of light shield layer 1 is the bigger the better.
From Fig. 2, it can also be seen that, when the dimension of picture of light shield layer 1 is greater than the dimension of picture of grid 4, may exist the dimension of picture of light shield layer 1 to be less than the situation of the dimension of picture of source electrode 2 and drain electrode 6, so, from the back of display floater, also have that part light incides source electrode 2,6 the both sides of draining ( source electrode 2,6 base drains), light, after multiple reflections, finally may incide oxide active layer 3, thereby affects the stability of oxide TFT.
For fear of the generation of this phenomenon, the invention provides the second embodiment.
As shown in Figure 3, this figure is the structural representation of oxide TFT the second embodiment of the present invention.
The difference of relative the first embodiment of oxide TFT the second embodiment of the present invention is, the dimension of picture of described light shield layer 1 is more than or equal to the dimension of picture of described source electrode 2 and drain electrode 6.
Like this; the light shield layer 1 of the oxide TFT of second embodiment of the invention 6 the whole light that can block from the back of display floater and incide source electrode 2, drain; avoid light to incide source electrode 2, drain after 6; through multiple reflections, incide the situation of oxide active layer 3; thereby protected oxide active layer 3, therefore can guarantee the stability of oxide TFT.
The standard that arranges of the feature size of the light shield layer 1 of second embodiment of the invention oxide TFT is: light shield layer 1 must be able to block from display floater back directive source electrode 2, whole light of 6 drain, be the dimension of picture that the dimension of picture of light shield layer 1 is greater than or equal to source electrode 2 and drain electrode 6, in the situation that not affecting aperture opening ratio, the figure of light shield layer 1 is the bigger the better.
As shown in Figure 4, this figure is the structural representation of oxide TFT the 3rd embodiment of the present invention.
The difference of relative the first embodiment of oxide TFT the 3rd embodiment of the present invention is, is also formed with insulating barrier 8 on light shield layer 1.
The oxide TFT of third embodiment of the invention, at described grid, 4 lower floors are provided with light shield layer 1.Light shield layer 1 can adopt lighttight metal material.
While contacting with grid 4 due to the light shield layer 1 that adopts lighttight metal material to make, may form electric capacity with other layer, for fear of the generation of this phenomenon, on light shield layer 1, be formed with insulating barrier 8.
Described insulating barrier 8 can be for example, with the material of existing insulating barrier in oxide TFT (gate insulation layer, passivation layer) identical, such as silicon dioxide etc.
Described lighttight metal material can be: molybdenum, aluminium, aluminium neodymium alloy etc.
The dimension of picture of the light shield layer 1 of third embodiment of the invention oxide TFT is greater than the dimension of picture of described grid 4; as can be seen from Figure 4; light shield layer 1 can block the light of the angle of gradient that incides source electrode 2 and drain electrode 6 from the back of display floater; protect oxide active layer 3, improved the stability of oxide TFT.
The standard that arranges of the feature size of the light shield layer 1 of third embodiment of the invention oxide TFT is: light shield layer 1 must be able to block from the light of display floater back directive source electrode 2,6 the angle of gradient of draining, and the dimension of picture of light shield layer 1 is greater than the dimension of picture of grid.Certainly, in the situation that not affecting aperture opening ratio, the figure of light shield layer 1 is the bigger the better.
From Fig. 4, it can also be seen that, when the dimension of picture of light shield layer 1 is greater than the dimension of picture of grid 4, may exist the dimension of picture of light shield layer 1 to be less than source electrode 2, the situation of 6 the dimension of picture of draining, so, also can part light from the back of display floater incide source electrode 2,6 the both sides of draining ( source electrode 2,6 base drains), light, after multiple reflections, finally may incide oxide active layer 3, thereby affects the stability of oxide TFT.
For fear of the generation of this situation, the invention provides further scheme, i.e. the 4th embodiment, as follows:
As shown in Figure 5, this figure is the structural representation of oxide TFT the 4th embodiment of the present invention.
The difference of relative the 3rd embodiment of oxide TFT the 4th embodiment of the present invention is, the dimension of picture of described light shield layer 1 specifically can be more than or equal to the dimension of picture of described source electrode 2 and drain electrode 6.
Like this; the light shield layer 1 of the oxide TFT of fourth embodiment of the invention 6 the whole light that can block from the back of display floater and incide source electrode 2, drain; avoid light to incide source electrode 2, drain after 6; through multiple reflections, incide the situation of oxide active layer 3; thereby protected oxide active layer 3, therefore can guarantee the stability of oxide TFT.
The standard that arranges of the feature size of the light shield layer 1 of fourth embodiment of the invention oxide TFT is: light shield layer 1 must be able to block from display floater back directive source electrode 2, whole light of 6 drain, be the dimension of picture that the dimension of picture of light shield layer 1 is greater than or equal to source electrode 2 and drain electrode 6, in the situation that not affecting aperture opening ratio, the figure of light shield layer 1 is the bigger the better.
When the light shield layer 1 described in the embodiment of the present invention is selected lighttight metal material, too thin if light shield layer 1 arranges, just can not reach the object of shading, likely can printing opacity; If it is too thick that light shield layer 1 arranges, complicated process of preparation and too large to the stress of substrate 7, easily chipping, affects device performance.Therefore, the thickness of light shield layer 1 of the present invention is elected 1000 dust～5000 dusts as, not only can avoid the excessive problem of stress, can realize the object of shading simultaneously.
When described light shield layer 1 is selected lighttight nonmetallic materials, same reason, too thin if light shield layer 1 arranges, likely can printing opacity; If too thick, complicated process of preparation and too large to the stress of substrate 7, easily chipping, affects device performance.Therefore, the thickness of light shield layer of the present invention is elected 1000 dust～10000 dusts as, not only can avoid the excessive problem of stress, can realize the object of shading simultaneously.
In order to protect the oxide active layer 3 of oxide TFT, oxide TFT also comprises and being formed on described oxide active layer 3 described in the embodiment of the present invention, and on described source electrode 2 and the barrier layer that drains between 6.
The present invention also provides a kind of display floater, and described display floater can be oled panel or LCD panel.
TFT in described display floater adopts any oxide TFT as described above, concrete,
On the substrate 7 of described oxide TFT, form one deck light shield layer 1, on described light shield layer 1, form grid 4; The dimension of picture of described light shield layer 1 is greater than the dimension of picture of described grid 4.Like this, light shield layer 1 light of 6 the angle of gradient that can block from the back of display floater and incide source electrode 2, drain, has protected oxide active layer 3, has improved the stability of oxide TFT.
Further, the dimension of picture of described light shield layer 1 is greater than or equal to described source electrode 2,6 dimension of picture drains.Like this; light shield layer 16 the whole light that can block from the back of display floater and incide source electrode 2, drain; avoid light to incide source electrode 2, drain after 6; through multiple reflections, incide the situation of oxide active layer 3; thereby protected oxide active layer 3, therefore can guarantee the stability of oxide TFT.
Described light shield layer 1 can adopt lighttight metal material or lighttight nonmetallic materials,
When described light shield layer 1 is lighttight metal material, on described light shield layer 1, can also be provided with insulating barrier 8, in the time of avoiding light shield layer 1 to contact with grid 4, light shield layer 1 may form with other layer the situation of electric capacity.
Described light shield layer is lighttight metal, and the thickness of described light shield layer can be: 1000 dust～5000 dusts.
Described light shield layer is lighttight nonmetal, and the thickness of described light shield layer can be: 1000 dust～10000 dusts.
The present invention also provides a kind of display unit, comprises display floater as above.Described display floater can be oled panel or LCD panel.
TFT in described display unit can adopt any oxide TFT as described above, concrete,
On the substrate 7 of described oxide TFT, form one deck light shield layer 1, on described light shield layer 1, form grid 4; The dimension of picture of described light shield layer 1 is greater than the dimension of picture of described grid 4.Like this, light shield layer 1 light of 6 the angle of gradient that can block from the back of display floater and incide source electrode 2, drain, has protected oxide active layer 3, has improved the stability of oxide TFT.
Further, the dimension of picture of described light shield layer 1 is greater than or equal to described source electrode 2,6 dimension of picture drains.Like this; light shield layer 16 the whole light that can block from the back of display floater and incide source electrode 2, drain; avoid light to incide source electrode 2, drain after 6; through multiple reflections, incide the situation of oxide active layer 3; thereby protected oxide active layer 3, therefore can guarantee the stability of oxide TFT.
Described light shield layer 1 can adopt lighttight metal material or lighttight nonmetallic materials,
When described light shield layer 1 is lighttight metal material, on described light shield layer 1, can also be provided with insulating barrier 8, in the time of avoiding light shield layer 1 to contact with grid 4, light shield layer 1 may form with other layer the situation of electric capacity.
Described light shield layer is lighttight metal, and the thickness of described light shield layer can be: 1000 dust～5000 dusts.
Described light shield layer is lighttight nonmetal, and the thickness of described light shield layer can be: 1000 dust～10000 dusts.
Below the realization flow of the oxide TFT described in the embodiment of the present invention is described, comprises the steps:
Step 1: form light shield layer 1 on substrate 7;
Be specially: on substrate 7, deposit the lighttight metal of one deck or nonmetallic materials.
If light shield layer 1 is selected metal material, the depositional mode of this metal material can be identical with the depositional mode of existing grid 4, as: magnetically controlled sputter method;
If light shield layer 1 is selected nonmetallic materials, the depositional mode of these nonmetallic materials can be identical with the depositional mode of existing insulating barrier, as: process for chemical vapor deposition of materials with via.
By composition technique, form the figure of light shield layer 1, that is: use mask plate by exposure and etching technics, to form the figure of light shield layer 1.Here, if select metal material, adopt wet etching; If select nonmetallic materials, adopt dry etching.
Wherein, the dimension of picture of described light shield layer 1 is greater than the dimension of picture of described grid 4, thus light shield layer 1 can block from the back of display floater incide source electrode 2, the light of 6 angles of gradient that drain, protected oxide active layer 3, improved the stability of oxide TFT.
Further, if light shield layer of the present invention 1 is selected metal material, also comprise: on light shield layer 1, form a layer insulating 8, its deposition is identical with the formation technique of existing insulating barrier with mode of composition, no longer describe in detail herein.
Step 2: order forms grid 4, oxide active layer 3 and source electrode 2 and drains 6;
Here, between described grid 4 and oxide active layer 3, be provided with gate insulation layer 5, at source electrode 2, draining on 6 to be provided with passivation layer.
It is achieved as follows:
On light shield layer 1, deposit the material of one deck grid 4, afterwards, by composition techniques such as photoetching and etchings, form grid 4;
On grid 4, deposit again one deck nonmetallic materials, and form gate insulation layer 5 by composition techniques such as photoetching and etchings;
On gate insulation layer 5, by composition techniques such as deposition, photoetching and etchings, form oxide active layer 3 again;
Finally, by composition techniques such as deposition, photoetching and etchings, form source electrode 2 and drain 6; Certainly, at oxide active layer 3 and source electrode 2, draining between 6 also forms barrier layer by composition techniques such as deposition, photoetching and etchings.At source electrode 2, draining on 6 forms passivation layer.
It should be noted that; in step 1, the dimension of picture of formed light shield layer 1 can be more than or equal to described source electrode 2,6 dimension of picture drains; therefore; light shield layer 16 the whole light that can block from the back of display floater and incide source electrode 2, drain; avoid light to incide source electrode 2, drain after 6; through multiple reflections, finally incide the situation of oxide active layer 3, protected oxide active layer 3, therefore can guarantee the stability of oxide TFT.
The above, be only preferred embodiment of the present invention, is not intended to limit protection scope of the present invention.
Claims (11)
1. an oxide TFT, is formed on substrate, it is characterized in that, described oxide TFT comprises: source electrode, drain electrode, oxide active layer, gate insulation layer and grid, and light shield layer; Light shield layer is formed on described substrate; Described grid is formed on described light shield layer, and described gate insulation layer is covered on the substrate that is formed with described grid, and described oxide active layer is formed on described gate insulation layer;
The dimension of picture of described light shield layer is greater than the dimension of picture of described grid.
2. oxide TFT according to claim 1, is characterized in that, the dimension of picture of described light shield layer is greater than or equal to the dimension of picture of described source electrode and drain electrode.
3. oxide TFT according to claim 1 and 2, is characterized in that, between described light shield layer and described grid, is provided with insulating barrier.
4. oxide TFT according to claim 3, is characterized in that, described light shield layer is lighttight metal, and the thickness of described light shield layer is: 1000 dust～5000 dusts.
5. oxide TFT according to claim 1 and 2, is characterized in that, described light shield layer is lighttight nonmetal, and the thickness of described light shield layer is: 1000 dust～10000 dusts.
6. oxide TFT according to claim 1 and 2, is characterized in that, described oxide TFT also comprises and being formed on described oxide active layer, and the barrier layer between described source electrode and drain electrode.
7. a display floater, is characterized in that, the TFT in described array base palte adopts the oxide TFT as described in any one in claim 1 to 5.
8. a display unit, is characterized in that, comprises display floater claimed in claim 6.
9. a preparation method of oxide TFT, is characterized in that, the method also comprises:
On substrate, form light shield layer;
On described light shield layer, form grid; The dimension of picture of described light shield layer is greater than the dimension of picture of described grid;
Sequentially form oxide active layer and source electrode, drain electrode.
10. the preparation method of oxide TFT according to claim 9, is characterized in that, the dimension of picture of described light shield layer is greater than or equal to the dimension of picture of described source electrode and drain electrode.
11. according to the preparation method of the oxide TFT described in claim 9 or 10, it is characterized in that, described light shield layer is lighttight metal, adopt magnetically controlled sputter method deposit metallic material, use mask board to explosure, and adopt wet etching to form the figure of light shield layer, on light shield layer, form insulating barrier, and then form grid.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104810394A (en) * | 2015-03-17 | 2015-07-29 | 深圳市华星光电技术有限公司 | Thin-film transistor and liquid crystal displayer |
| CN106206456A (en) * | 2016-08-10 | 2016-12-07 | 京东方科技集团股份有限公司 | The manufacture method of a kind of array base palte, array base palte and display device |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0832082A (en) * | 1994-07-15 | 1996-02-02 | Sony Corp | Manufacture of thin film transistor |
| JPH09252141A (en) * | 1996-01-11 | 1997-09-22 | Toshiba Corp | Liq. crystal display element, manufacturing method thereof and sputtering apparatus |
| US20020050795A1 (en) * | 2000-10-27 | 2002-05-02 | Nec Corporation | Active matrix organic el display device and method of forming the same |
| CN1435814A (en) * | 2002-01-30 | 2003-08-13 | 三洋电机株式会社 | Semiconductor display device, mfg. method thereof and active array display device |
| US6958740B1 (en) * | 1999-10-01 | 2005-10-25 | Sanyo Electric Co., Ltd. | Electroluminescence display device |
| US20050275038A1 (en) * | 2004-06-14 | 2005-12-15 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
| JP2011181592A (en) * | 2010-02-26 | 2011-09-15 | Technology Research Association For Advanced Display Materials | Active matrix display device and method for manufacturing active matrix display device |
| CN102245531A (en) * | 2008-12-12 | 2011-11-16 | 出光兴产株式会社 | Composite oxide sintered body and sputtering target comprising same |
-
2012
- 2012-08-10 CN CN201210285337.2A patent/CN103579356A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0832082A (en) * | 1994-07-15 | 1996-02-02 | Sony Corp | Manufacture of thin film transistor |
| JPH09252141A (en) * | 1996-01-11 | 1997-09-22 | Toshiba Corp | Liq. crystal display element, manufacturing method thereof and sputtering apparatus |
| US6958740B1 (en) * | 1999-10-01 | 2005-10-25 | Sanyo Electric Co., Ltd. | Electroluminescence display device |
| US20020050795A1 (en) * | 2000-10-27 | 2002-05-02 | Nec Corporation | Active matrix organic el display device and method of forming the same |
| CN1435814A (en) * | 2002-01-30 | 2003-08-13 | 三洋电机株式会社 | Semiconductor display device, mfg. method thereof and active array display device |
| US20050275038A1 (en) * | 2004-06-14 | 2005-12-15 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
| CN102245531A (en) * | 2008-12-12 | 2011-11-16 | 出光兴产株式会社 | Composite oxide sintered body and sputtering target comprising same |
| JP2011181592A (en) * | 2010-02-26 | 2011-09-15 | Technology Research Association For Advanced Display Materials | Active matrix display device and method for manufacturing active matrix display device |
Cited By (24)
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|---|---|---|---|---|
| US10082713B2 (en) | 2015-03-17 | 2018-09-25 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Thin film transistor and liquid crystal display device |
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| CN104810394A (en) * | 2015-03-17 | 2015-07-29 | 深圳市华星光电技术有限公司 | Thin-film transistor and liquid crystal displayer |
| CN104810394B (en) * | 2015-03-17 | 2019-04-02 | 深圳市华星光电技术有限公司 | Thin film transistor (TFT) and liquid crystal display |
| US10224252B2 (en) | 2016-08-10 | 2019-03-05 | Boe Technology Group Co., Ltd. | Method for fabricating array substrate, array substrate and display device |
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| CN106206456A (en) * | 2016-08-10 | 2016-12-07 | 京东方科技集团股份有限公司 | The manufacture method of a kind of array base palte, array base palte and display device |
| CN106981478A (en) * | 2017-04-07 | 2017-07-25 | 京东方科技集团股份有限公司 | Top gate type thin film transistor and preparation method thereof, array base palte, display panel |
| US10868190B2 (en) | 2017-04-07 | 2020-12-15 | Boe Technology Group Co., Ltd. | Top-gate thin film transistor, manufacturing method thereof, array substrate and display panel comprising top-gate thin film transistor |
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| US11177297B2 (en) | 2017-06-16 | 2021-11-16 | Boe Technology Group Co., Ltd. | Array substrate and manufacturing method therefor, and display device |
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| CN107611032A (en) * | 2017-08-21 | 2018-01-19 | 北京大学深圳研究生院 | Thin film transistor (TFT) comprising light shield layer and preparation method thereof |
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| CN109037242A (en) * | 2018-08-01 | 2018-12-18 | 京东方科技集团股份有限公司 | Array substrate and its manufacturing method, display panel |
| WO2020024292A1 (en) * | 2018-08-03 | 2020-02-06 | 深圳市柔宇科技有限公司 | Array substrate and display device |
| CN112639600A (en) * | 2018-08-03 | 2021-04-09 | 深圳市柔宇科技股份有限公司 | Array substrate and display device |
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| CN111128874A (en) * | 2019-12-18 | 2020-05-08 | 武汉华星光电半导体显示技术有限公司 | TFT array substrate, preparation method thereof and OLED touch display device |
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