CN103578982A - Field stop type insulated gate bipolar transistor and manufacturing method thereof - Google Patents
Field stop type insulated gate bipolar transistor and manufacturing method thereof Download PDFInfo
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- CN103578982A CN103578982A CN201210270702.2A CN201210270702A CN103578982A CN 103578982 A CN103578982 A CN 103578982A CN 201210270702 A CN201210270702 A CN 201210270702A CN 103578982 A CN103578982 A CN 103578982A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims description 39
- 239000011248 coating agent Substances 0.000 claims description 23
- 238000000576 coating method Methods 0.000 claims description 23
- 239000002245 particle Substances 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 238000005224 laser annealing Methods 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to a field stop type insulated gate bipolar transistor and a manufacturing method of the field stop type insulated gate bipolar transistor. The manufacturing method of the field stop type insulated gate bipolar transistor sequentially comprises the following steps of (1) forming an IGBT structure, wherein an obverse side structure of the IGBT is formed on the obverse side of a substrate; (2) thinning, wherein the substrate is thinned; (3) forming a P layer, wherein an N+ buffer layer is formed on the reverse side of the substrate, and the P layer is formed on the other side of the N+ buffer layer; (4) forming a collector, wherein the collector is formed on the other side, making contact with the N+ buffer layer, of the P layer. When the manufacturing method of the field stop type insulated gate bipolar transistor is used, dedicated devices are not needed, the technology is simple, and efficiency is high.
Description
Technical field
The present invention relates to integrated circuit and manufacture field, relate in particular to a kind of termination type (Field Stop, referred to as FS type) manufacture method of insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, referred to as IGBT) and the field termination insulated gate bipolar transistor that utilizes the method to manufacture.
Background technology
The compound full-control type voltage driven type power semiconductor that IGBT is comprised of BJT (double pole triode) and MOS (insulating gate type field effect tube),, have the advantage of the high input impedance of MOSFET and low conduction voltage drop two aspects of GTR concurrently.GTR saturation pressure reduces, and current carrying density is large, but drive current is larger; MOSFET driving power is very little, and switching speed is fast, but conduction voltage drop is large, and current carrying density is little.IGBT combines the advantage of above two kinds of devices, and the little and saturation pressure of driving power reduces.Be applicable to being very much applied to direct voltage and be 600V and above converter system as fields such as alternating current machine, frequency converter, Switching Power Supply, lighting circuit, Traction Drives.
At present, domestic 600V/1200V IGBT is mainly that employing PT type (punch) and NPT(are non-punch) structure.PT type IGBT is with the P of hundreds of micron thick
+monocrystalline is parent material (substrate), afterwards extension N
+resilient coating and N
-withstand voltage layer, complicated Facad structure is manufactured on epitaxial loayer.NPT type IGBT adopts N
-type monocrystalline is parent material, and positive complicated structure is fabricated directly in single crystalline substrate, adopts the method for grinding, corroding to be thinned to withstand voltage required thickness after Facad structure completes from substrate back, forms P afterwards by Implantation
+collector region.
Compare PT type IGBT and NPT type IGBT, also propose to have and a kind ofly can effectively reduce the conduction voltage drop of product and the FS type of application of temperature (Field Stop, end) IGBT.But general 600V/1200V FS type IGBT is superthin section, need to adopt thin slice circulation completely, technical difficulty is large, and needs thin slice equipment completely, and cost is also very high.
Summary of the invention
In view of the above problems, the present invention aims to provide a kind of without special equipment, technique is simple, efficiency the is high manufacture method of field termination type insulated gate bipolar transistor (that is, FS type IGBT) and the field termination type insulated gate bipolar transistor producing by the method.
The manufacture method of of the present invention termination type insulated gate bipolar transistor, is characterized in that possessing successively following step:
Form the step of IGBT structure, on the front of substrate, form the Facad structure of IGBT;
Attenuate step, by described substrate thinning;
Form the step of P layer, at the back side of described substrate, form N
+resilient coating, and at described N
+the another side of resilient coating forms P layer;
Form the step of collector electrode, at described P layer and described N
+the another side that resilient coating contacts forms collector electrode.。
Preferably, the step of described formation P layer also comprises following sub-step:
By high energy, carry on the back and note N-type particle formation N
+resilient coating;
By B Implanted, form P layer; And
By laser annealing, activate the back of the body and note particle.
Preferably, in the step of described formation P layer, adopt the high energy ion implantation board of energy more than 500Kev to inject N-type particle.
Preferably, as described substrate, adopt the molten wafer in floating zone.
Preferably, in described attenuate step, the reduced thickness of described substrate is arrived to 60mm～140mm.
Preferably, the step of described formation IGBT structure comprises following sub-step:
Form ring district: encircle injection and push away trap;
Be formed with source region, form gate electrode, carry out P-body and push away trap;
Carry out emitter injection and push away trap;
Dielectric layer deposit;
Perforate deposit Al in dielectric layer;
Carry out Al corrosion, form gate electrode and emission electrode;
Form passivation layer.
Preferably, in the step of described formation collector electrode, by deposit back metal, form collector electrode.
Of the present invention termination type insulated gate bipolar transistor, is characterized in that, comprising:
The Facad structure of described IGBT comprises:
P-body district;
Be formed on the source region in described P-body district;
Be formed on the emitter on described source region;
Form dielectric layer;
Be formed on grid and the emitter of described dielectric layer top.
According to the manufacture method of of the present invention termination type insulated gate bipolar transistor, can adopt the processing line of conventional products to manufacture ultra-thin field termination type insulated gate bipolar transistor, therefore, do not need thin slice equipment completely just can manufacture ultra-thin field termination type insulated gate bipolar transistor, have advantages of that technique is simple, cost is low, efficiency is high.And the FS type IGBT that utilizes the present invention to manufacture, compares and NPT type IGBT, can obtain lower conduction voltage drop and application of temperature.
Accompanying drawing explanation
Fig. 1 means the flow chart of key step of the manufacture method of FS type insulated gate bipolar transistor of the present invention.
Fig. 2 means through the transistorized structural representation afterwards of " the forming the step of IGBT structure " in the manufacture method of FS type insulated gate bipolar transistor of the present invention.
Fig. 3 means through the transistorized structural representation afterwards of " the attenuate step " in the manufacture method of FS type insulated gate bipolar transistor of the present invention.
Fig. 4 means that the high energy back of the body in the manufacture method of FS type insulated gate bipolar transistor of the present invention notes the schematic diagram of N-type particle.
Fig. 5 means through " forming the step of P layer " and " forming the step of collector electrode " the transistorized schematic diagram afterwards in the manufacture method of FS type insulated gate bipolar transistor of the present invention.
Embodiment
What introduce below is some in a plurality of embodiment of the present invention, aims to provide basic understanding of the present invention.Be not intended to confirm key of the present invention or conclusive key element or limit claimed scope.
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, the present invention is described in further detail.
Fig. 1 means the flow chart of key step of the manufacture method of FS type insulated gate bipolar transistor of the present invention.
As shown in Figure 1, the manufacture method of FS type insulated gate bipolar transistor of the present invention mainly comprises: form the step S101 of IGBT structure, form the Facad structure of IGBT on the front of substrate; Attenuate step S102, by described substrate thinning; Form the step S103 of P layer, at the back side of described substrate, form N
+after resilient coating, form again P layer; Form the step S104 of collector electrode, at the opposing face contacting with the described resilient coating formation collector electrode of described P layer.
Below, with reference to Fig. 2～Fig. 5, the manufacture method of FS type insulated gate bipolar transistor of the present invention is specifically described.Wherein, Fig. 2 means through the transistorized structural representation afterwards of " the forming the step of IGBT structure " in the manufacture method of FS type insulated gate bipolar transistor of the present invention.Fig. 3 means through the transistorized structural representation afterwards of " the attenuate step " in the manufacture method of FS type insulated gate bipolar transistor of the present invention.Fig. 4 means that the high energy back of the body in the manufacture method of FS type insulated gate bipolar transistor of the present invention notes the schematic diagram of N-type particle.Fig. 5 means through " forming the step of P layer " and " forming the step of collector electrode " the transistorized schematic diagram afterwards in the manufacture method of FS type insulated gate bipolar transistor of the present invention.
As shown in Figure 2, first, on the front of substrate 10, form IGBT Facad structure.The formation step of the Facad structure of IGBT is as follows:
Form ring district: encircle injection and push away trap;
Forming source region 23(is the N in Fig. 1
+layer);
The deposit of dielectric layer 25～27, wherein, dielectric layer 25 is oxide skin(coating)s, and dielectric layer 26 is polysilicon layers, and dielectric layer 27 is oxide skin(coating)s;
Perforate deposit Al in dielectric layer 25～27;
Carry out Al corrosion, form gate electrode 28 and emission electrode 24;
Form passivation layer.
The formation step of the Facad structure of above-mentioned IGBT is identical with the forming process of general IGBT Facad structure, therefore, omits and illustrates here.
Here, substrate 10 is N-type substrates, in the present invention, adopts molten (Floating Zone, referred to as the FZ) wafer in floating zone.Because FZ wafer is original, it is sheet, and the fragment rate of such sheet on the line of production technology of NPT type IGBT product is low, therefore, just can use the line of production technology (being the line of production technology of sheet) of common NPT type IGBT product to produce ultra-thin FS type IGBT of the present invention.
Then,, after forming the Facad structure of IGBT, carry out the attenuate step of the thickness of attenuate substrate 10.Attenuate substrate 10, its disk final thickness is less than NPT type IGBT disk final thickness.For example, in the situation that produce the FS type insulated gate bipolar transistor of 600V/1200V, between reduced thickness to the 60 μ m～140 μ m of substrate.
As shown in Figure 3, by carrying out attenuate step, the thickness of substrate 10 is thinned to be adapted to manufacture FS type insulated gate bipolar transistor.Then, as shown in Figure 4, for the back side of substrate 10, carry out high energy ion implantation (being that the high energy back of the body is noted) N-type particle, form thus the N in Fig. 5
+type resilient coating 30.
In the present invention, because needs are darker by particle injection, the present inventor notes through having researched and proposed the back of the body that adopts high energy ion implantation board to carry out N-type particle.Darker for particle is injected, for example preferably can adopt the high energy ion implantation board of energy more than 500Kev.
Then,, after the high energy back of the body is noted N-type particle, the boron that reinjects (B), forms the P layer 40 in Fig. 5.P layer 40 is formed on N
+the opposing face contacting with substrate 10 of type resilient coating 30.For the injection of boron, because the junction depth that only needs to form is more shallow, therefore, adopt the normal board that injects to inject.
Then, need to activate the back of the body and note particle, need the N to substrate 10 back sides
+the impurity in type resilient coating 30 and P layer 40 region activates, and now, because the Facad structure of IGBT forms, and gate electrode 28 and emission electrode 24 in the Facad structure of IGBT is to consist of Al.And can not withstand high temperatures due to Al, therefore, just can not adopt common high annealing mode here.For this situation, under the prerequisite for the Al in guaranteeing not damage the Facad structure of IGBT, anneal, the present inventor, through research with keen determination, has proposed to utilize laser annealing to activate the method that the back of the body is noted particle.
So-called laser annealing refers to and utilizes laser material to be carried out to the processing method of annealing in process.Laser annealing adopts laser scanning full wafer wafer, only in the very short time, in less region, produces heat.Due to the heating time of laser annealing extremely short (be about 1,000,000 of ordinary hot annealing/), therefore can avoid the generation of Al melting.
Then, as shown in Figure 5, forming N
+after type resilient coating 30 and P layer, P layer and N
+the opposing face of type resilient coating 30 contacts forms collector electrode 50.Collector electrode 50 is for example to form by deposit back metal Al-Ti-N-Ag.
Manufacture method for of the present invention termination type insulated gate bipolar transistor is illustrated above.Under regard to the field termination type insulated gate bipolar transistor that utilizes the method manufacturing structure carry out brief description.
As shown in Figure 5, utilize the field termination type insulated gate bipolar transistor of the manufacture method manufacturing of termination type insulated gate bipolar transistor of the present invention to comprise: to comprise: collector electrode 50, to be formed on P layer 40 on collector electrode 50, to be formed on the N on P layer 40
+ resilient coating 30, be formed on N
+substrate 10 on resilient coating 30 and the Facad structure that is formed on the IGBT top of substrate 10.
Wherein, the Facad structure of IGBT comprises: P-body district 21, be formed on 23He drain region, 21Shang source area, P-body district 22, be formed on emitter 24 on 23He drain region, source area 22, be formed on the dielectric layer 25～27 on 53, P-body district, source area 21, substrate 10; Be formed on the grid 28 on described dielectric layer 25～27, wherein, dielectric layer 25 is oxide skin(coating)s, and dielectric layer 26 is polysilicon layers, and dielectric layer 27 is oxide skin(coating)s.
Based on foregoing, according to the manufacture method of of the present invention termination type insulated gate bipolar transistor, can adopt the processing line of conventional products, for example the processing line of sheet is manufactured ultra-thin field termination type insulated gate bipolar transistor, therefore, do not need thin slice equipment completely just can manufacture ultra-thin field termination type insulated gate bipolar transistor, have advantages of that technique is simple, cost is low, efficiency is high.
And the FS type IGBT that utilizes the present invention to manufacture, compares and NPT type IGBT, can obtain lower conduction voltage drop and application of temperature.
Above example has mainly illustrated the manufacture method of superthin section FS type IGBT of the present invention and the FS type IGBT producing by the method.Although only some of them the specific embodiment of the present invention is described, those of ordinary skills should understand, and the present invention can be within not departing from its purport and scope implements with many other forms.Therefore, the example of showing and execution mode are regarded as illustrative and not restrictive, and in the situation that not departing from spirit of the present invention as defined in appended each claim and scope, the present invention may be contained various modifications and replacement.
Claims (9)
1. a manufacture method for field termination type insulated gate bipolar transistor, is characterized in that, possesses successively following step:
Form the step of IGBT structure, on the front of substrate, form the Facad structure of IGBT;
Attenuate step, by described substrate thinning;
Form the step of P layer, at the back side of described substrate, form N
+resilient coating, and at described N
+the another side of resilient coating forms P layer;
Form the step of collector electrode, at described P layer and described N
+the another side that resilient coating contacts forms collector electrode.
2. the manufacture method of as claimed in claim 1 termination type insulated gate bipolar transistor, is characterized in that,
In the step of described formation P layer, comprise successively following sub-step:
Described substrate is carried out to the high energy back of the body and note N-type particle formation N
+resilient coating;
By B Implanted, form P layer; And
By laser annealing, activate the back of the body and note particle.
3. the manufacture method of as claimed in claim 2 termination type insulated gate bipolar transistor, is characterized in that, in the step of described formation P layer, adopts the high energy ion implantation board of energy more than 500Kev to inject N-type particle.
4. the manufacture method of as claimed in claim 3 termination type insulated gate bipolar transistor, is characterized in that, as described substrate, adopts the molten wafer in floating zone.
5. the manufacture method of the field termination type insulated gate bipolar transistor as described in claim 1～4, is characterized in that, in described attenuate step, between reduced thickness to the 60 μ m～140 μ m of described substrate.
6. the manufacture method of as claimed in claim 5 termination type insulated gate bipolar transistor, is characterized in that,
In the step that forms IGBT structure, comprise the steps:
Form ring district, encircle injection and push away trap;
Be formed with source region, form gate electrode, carry out P-body and push away trap;
Carry out emitter injection and push away trap;
Dielectric layer deposit;
Perforate deposit Al in dielectric layer;
Carry out Al corrosion, form gate electrode and emission electrode;
Form passivation layer.
7. the manufacture method of as claimed in claim 6 termination type insulated gate bipolar transistor, is characterized in that, in the step of described formation collector electrode, by deposit back metal, forms collector electrode.
8. a field termination type insulated gate bipolar transistor, is characterized in that, it comprises:
Be formed at the Facad structure of the IGBT of described substrate face;
N
+resilient coating;
P type layer;
Collector electrode.
9. as claimed in claim 8 termination type insulated gate bipolar transistor, is characterized in that, the Facad structure of described IGBT comprises:
P-body district;
Be formed at the source region in described P-body district;
Be formed at the emitter on described source region;
Dielectric layer; And
Be formed at grid and the emitter of described dielectric layer top.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210270702.2A CN103578982A (en) | 2012-08-01 | 2012-08-01 | Field stop type insulated gate bipolar transistor and manufacturing method thereof |
| PCT/CN2013/080672 WO2014019536A1 (en) | 2012-08-01 | 2013-08-01 | Fs type igbt and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210270702.2A CN103578982A (en) | 2012-08-01 | 2012-08-01 | Field stop type insulated gate bipolar transistor and manufacturing method thereof |
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|---|---|
| CN103578982A true CN103578982A (en) | 2014-02-12 |
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| WO (1) | WO2014019536A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109065451A (en) * | 2018-07-19 | 2018-12-21 | 厦门芯代集成电路有限公司 | A kind of manufacturing method of punch IGBT |
| CN113506750A (en) * | 2021-05-20 | 2021-10-15 | 上海朕芯微电子科技有限公司 | Preparation method of insulated gate bipolar transistor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101494238A (en) * | 2008-01-23 | 2009-07-29 | 三菱电机株式会社 | Semiconductor device |
| WO2011096326A1 (en) * | 2010-02-04 | 2011-08-11 | 富士電機システムズ株式会社 | Process for production of semiconductor element, and device for production of semiconductor element |
| US20120025261A1 (en) * | 2010-07-30 | 2012-02-02 | Madhur Bobde | Method of minimizing field stop insulated gate bipolar transistor (IGBT) buffer and emitter charge variation |
-
2012
- 2012-08-01 CN CN201210270702.2A patent/CN103578982A/en active Pending
-
2013
- 2013-08-01 WO PCT/CN2013/080672 patent/WO2014019536A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101494238A (en) * | 2008-01-23 | 2009-07-29 | 三菱电机株式会社 | Semiconductor device |
| WO2011096326A1 (en) * | 2010-02-04 | 2011-08-11 | 富士電機システムズ株式会社 | Process for production of semiconductor element, and device for production of semiconductor element |
| US20120025261A1 (en) * | 2010-07-30 | 2012-02-02 | Madhur Bobde | Method of minimizing field stop insulated gate bipolar transistor (IGBT) buffer and emitter charge variation |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109065451A (en) * | 2018-07-19 | 2018-12-21 | 厦门芯代集成电路有限公司 | A kind of manufacturing method of punch IGBT |
| CN113506750A (en) * | 2021-05-20 | 2021-10-15 | 上海朕芯微电子科技有限公司 | Preparation method of insulated gate bipolar transistor |
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| WO2014019536A1 (en) | 2014-02-06 |
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Application publication date: 20140212 |