CN103576440B - Quincuncial mask plate and method for making patterned substrate by utilizing same - Google Patents
Quincuncial mask plate and method for making patterned substrate by utilizing same Download PDFInfo
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- CN103576440B CN103576440B CN201310473082.7A CN201310473082A CN103576440B CN 103576440 B CN103576440 B CN 103576440B CN 201310473082 A CN201310473082 A CN 201310473082A CN 103576440 B CN103576440 B CN 103576440B
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- mask plate
- blossom type
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- patterned substrate
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Abstract
The invention provides a quincuncial mask plate. The quincuncial mask plate comprises a photoetching plate, wherein a quincuncial array unit is arranged on the quincuncial mask plate, the quincuncial array unit comprises multiple quincuncial units, and each quincuncial unit comprises an outer circular ring and an inner circle tangent to the inner diameter of the outer circular ring. By adopting the quincuncial mask plate and a method for making a patterned substrate by utilizing the quincuncial mask plate, epitaxial growth defects are reduced, and light extraction efficiency is improved, thus luminous efficiency of a GaN-based LED (light-emitting diode) is improved.
Description
Technical field
The present invention relates to field of semiconductor devices, more particularly, to a kind of blossom type mask plate and utilize blossom type mask plate
The method manufacturing patterned substrate.
Background technology
At present, gan base (gallium nitride) led(light emitting diode) have been widely used for total colouring, traffic light, liquid
Brilliant backlight shows, and steps into lighting field.In order to meet the requirement of projector of future generation, headlight for vehicles and high-end market,
People have been working hard improve luminous power and external quantum efficiency.The brightness of generally led can be expressed as internal quantum efficiency and outer amount
The product (assuming that current injection efficiency is 100%) of sub- efficiency.Because lattice mismatch and thermal coefficient of expansion are larger, Sapphire Substrate
The upper epitaxial layer being formed by gan base still has very high line dislocation (tdd, threading dislocation
Densities) density (108～～～1010cm～2), this can lead to the exhaustion of internal quantum efficiency.In order to improve gan base blue precious
Epitaxial quality on stone, there has been proposed various growing technology, such as epitaxial lateral overgrowth (elog, epitaxy of
Lateral over～growth), micron order sinx(silicon nitride) or siox(silicon oxide) pattern mask and graphically blue precious
Ground mass plate (pss, patterned sapphire substrate).On the other hand, the high index of refraction of gan base limits launching light
Escape angle only have 23 °, lead to low light extraction efficiency (lee).In order to improve light extraction efficiency, people similarly propose
Various methods, such as pss, the p-type gallium nitride layer (p～gan layer) of roughening, laser lift-off technique and the sky being embedded in led structure
Hole.
Content of the invention
In order to solve the technical problem in the presence of background technology, the present invention proposes a kind of blossom type mask plate and profit
The method manufacturing patterned substrate with blossom type mask plate, reduces epitaxial growth defect, increases light extraction efficiency, thus improving
Gan base led luminous efficiency.
The technical solution of the present invention is: a kind of blossom type mask plate, including photolithography plate it is characterised in that: described light
Mechanical upper setting blossom type array element, described blossom type array element includes multiple blossom type units, described blossom type unit
Including outer toroid and the inner circle tangent with outer toroid internal diameter.
Above-mentioned blossom type unit distance adjacent between any two is equal.
The quantity of above-mentioned inner circle is three or more.
A diameter of 1～2 micron of above-mentioned inner circle；A diameter of 2.16～10 microns of described outer toroid.
Above-mentioned outer toroid interior diameter is 2.16～6 microns；Described outer toroid overall diameter is 4.16～10 microns.
A kind of utilization blossom type mask plate manufacture patterned substrate method it is characterised in that: methods described includes following
Step:
1) coating photoresist on a sapphire substrate；
2) using blossom type mask plate, photoresist is exposed, and to photoresist developing and baking, shape on a photoresist
Become litho pattern；
3) using boron trichloride gas, multiple dry method main etching is carried out to litho pattern and Sapphire Substrate, make corresponding photoetching
The Sapphire Substrate of figure forms triangle circular cone, when litho pattern exposes the triangle circular cone of Sapphire Substrate formation, stops
Etching；
4) carry out dry method over etching using boron trichloride gas and argon gas, make Sapphire Substrate form patterned substrate,
Patterned substrate has the triangle conical structure of array distribution, and the center top of triangle conical structure is multiple triangle cone；
5) remove the photoresist of remnants, and described patterned substrate is cleaned up.
Above-mentioned steps 3) in the etching parameters of dry method main etching be: etch period is 480～720 seconds every time, interval time
For 20 seconds, cavity air pressure was 2.7 millitorr～4.7 millitorrs, and upper electrode power is 1200 watts～3600 watts, and inside and outside loop current ratio is for 5
～15.
Above-mentioned steps 4) in dry method over etching be carried out in two steps, the first step etching parameter be: boron trichloride gas and argon
The flow-rate ratio of gas is 100:10, and etch period is 360～1080 seconds, and lower electrode power is 40 watts～120 watts, and second step etches
Parameter be: the flow-rate ratio of boron trichloride gas and argon gas is 10:100, and etch period is 0～360 second, and lower electrode power is
140～420 watts.
Above-mentioned steps 5) in adopt concentrated sulphuric acid: h2o2The mixed solution of=4:1 removes the photoresist of remnants.
Above-mentioned Sapphire Substrate is 2 cun or 4 cun of sapphire plain films；Described photoresist be thickness be 1.6～3.0 microns just
Property photoresist.
The energy of above-mentioned exposure is 180～280ms；Time of exposure is 150～300 milliseconds；Baking temperature is 120～150
DEG C, the time is 5～10 minutes；Described bcl3Gas and chf3The ratio of gas is 100:10.
The present invention adopts blossom type light shield (have in an annulus multiple roundlets and tangent to each other) on a sapphire substrate
Secondary exposure, is manufactured that blossom type pss figure by dry etching, it is achieved thereby that reducing epitaxy defect/increase light emission rate
Effect；This process is simple is easy to operate, is highly suitable for producing greatly.
Brief description
Fig. 1 is present example one photolithography plate cell schematics；
Fig. 2 is the arrangement schematic diagram on present example one photolithography plate；
Fig. 3 is present example two photolithography plate cell schematics；
Fig. 4 is the arrangement schematic diagram on present example two photolithography plate；
Specific embodiment
Referring to Fig. 1 Fig. 4, the blossom type mask plate of the present invention, including photolithography plate, photolithography plate arranges blossom type array list
Unit, blossom type array element includes multiple blossom type units, and blossom type unit includes outer toroid and is concentric circular with outer toroid
Interior annular；Blossom type unit distance adjacent between any two is equal.The quantity of interior annular is three or more.Interior annular is a diameter of
1～2 micron；A diameter of 2.16～10 microns of outer toroid.Outer toroid interior diameter is 2.16～6 microns；Outer toroid overall diameter is
4.16～10 microns.Two specific embodiments in the present invention are: outer toroid interior diameter is 2.16～4.3 microns (three
Circle), 3～6 microns (seven circles).Outer toroid overall diameter is 4.16～8.3 microns (three circles), 5～10 microns (seven circles).
Referring to Fig. 1, Fig. 2: the specific embodiment of the invention: the structure of three circles: d1=8.3 μm, d2=2 μm, d3=4.3 μm；s=
1μm.
A kind of method that utilization blossom type mask plate manufactures patterned substrate, comprises the following steps:
Step 1: coating photoresist on a sapphire substrate；The size of Sapphire Substrate is 2 inches or 4 inches；Photoresist
It is the positive photoresist that thickness is 1.6～3.0 microns.
Step 2: described photoresist is carried out using the blossom type mask plate as described in any one in claim 1 to 5
Exposure, and to described photoresist developing and baking, so that litho pattern to be formed on described photoresist；Time of exposure is 150～300
Millisecond；Baking temperature is 120～150 DEG C, and baking time is 5～10 minutes.
Step 3: using boron trichloride gas, multiple dry method main etching is carried out to described litho pattern and Sapphire Substrate, with
The Sapphire Substrate of corresponding described litho pattern is made to form triangle circular cone, and when described litho pattern exposes described sapphire lining
During the triangle circular cone that bottom is formed, stop etching；What dry method main etching was carried out etches number of times with the increase of described photoresist thickness
Increase.
The etching parameters of dry method main etching are: etch period is 480～720 seconds every time, and interval time is 20 seconds, cavity gas
Press as 2.7 millitorr～4.7 millitorrs, upper electrode power is 1200 watts～3600 watts, inside and outside loop current ratio is for 5～15.
Step 4: carry out dry method over etching using boron trichloride gas and argon gas, so that described Sapphire Substrate forms figure
Shape substrate, described patterned substrate has the triangle conical structure of array distribution, the center top of described triangle conical structure
For multiple triangles cone；Triangle conical structure is spaced substantially equidistant distribution.
Dry method over etching is carried out in two steps, and the parameter of first step etching is: the flow-rate ratio of boron trichloride gas and argon gas
For 100:10, etch period is 360～1080 seconds, and lower electrode power is 40 watts～120 watts, and the parameter of second step etching is: three
The flow-rate ratio of boron chloride gas and argon gas is 10:100, and etch period is 0～360 second, and lower electrode power is 140～420 watts.
Step 5: remove the photoresist of remnants, and described patterned substrate is cleaned up.Using concentrated sulphuric acid: h2o2=4:1
Mixed solution remove remnants photoresist.
Claims (9)
1. a kind of blossom type mask plate, including photolithography plate it is characterised in that: on described photolithography plate arrange blossom type array element,
Described blossom type array element includes multiple blossom type units, described blossom type unit include outer toroid and with outer toroid internal diameter phase
The inner circle cut；Described blossom type unit distance adjacent between any two is equal；The quantity of described inner circle is three or more.
2. blossom type mask plate according to claim 1 it is characterised in that: a diameter of 1～2 micron of described inner circle；Institute
The outer toroid overall diameter stated is 2.16～10 microns.
3. blossom type mask plate according to claim 2 it is characterised in that: described outer toroid interior diameter is 2.16～6 micro-
Rice；Described outer toroid overall diameter is 4.16～10 microns.
4. a kind of using blossom type mask plate as claimed in claim 1 manufacture patterned substrate method it is characterised in that: described side
Method comprises the following steps:
1) coating photoresist on a sapphire substrate；
2) using blossom type mask plate, photoresist is exposed, and to photoresist developing and baking, forms light on a photoresist
Needle drawing shape；
3) using boron trichloride gas, multiple dry method main etching is carried out to litho pattern and Sapphire Substrate, make corresponding litho pattern
Sapphire Substrate formed triangle circular cone, when litho pattern expose Sapphire Substrate formation triangle circular cone when, stop etching；
4) carry out dry method over etching using boron trichloride gas and argon gas, make Sapphire Substrate form patterned substrate, figure
Change the triangle conical structure that substrate has array distribution, the center top of triangle conical structure is multiple triangle cone；
5) remove the photoresist of remnants, and described patterned substrate is cleaned up.
5. utilization blossom type mask plate according to claim 4 manufacture patterned substrate method it is characterised in that: described
Step 3) in the etching parameters of dry method main etching be: etch period is 480～720 seconds every time, and interval time is 20 seconds, cavity gas
Press as 2.7 millitorr～4.7 millitorrs, upper electrode power is 1200 watts～3600 watts, inside and outside loop current ratio is for 1:5～15.
6. utilization blossom type mask plate according to claim 5 manufacture patterned substrate method it is characterised in that: described
Step 4) in dry method over etching be carried out in two steps, the first step etching parameter be: the flow-rate ratio of boron trichloride gas and argon gas
For 100:10, etch period is 360～1080 seconds, and lower electrode power is 40 watts～120 watts, and the parameter of second step etching is: three
The flow-rate ratio of boron chloride gas and argon gas is 10:100, and lower electrode power is 140～420 watts.
7. utilization blossom type mask plate according to claim 6 manufacture patterned substrate method it is characterised in that: described
Step 5) in adopt concentrated sulphuric acid: h2o2The mixed solution of=4:1 removes the photoresist of remnants.
8. utilization blossom type mask plate according to claim 7 manufacture patterned substrate method it is characterised in that: described
Sapphire Substrate is 2 cun or 4 cun of sapphire plain films；Described photoresist is the positive photoresist that thickness is 1.6～3.0 microns.
9. utilization blossom type mask plate according to claim 8 manufacture patterned substrate method it is characterised in that: described
The energy of exposure is 180～280ms；Time of exposure is 150～300 milliseconds；Baking temperature be 120～150 DEG C, the time be 5～
10 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310473082.7A CN103576440B (en) | 2013-10-11 | 2013-10-11 | Quincuncial mask plate and method for making patterned substrate by utilizing same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310473082.7A CN103576440B (en) | 2013-10-11 | 2013-10-11 | Quincuncial mask plate and method for making patterned substrate by utilizing same |
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| Publication Number | Publication Date |
|---|---|
| CN103576440A CN103576440A (en) | 2014-02-12 |
| CN103576440B true CN103576440B (en) | 2017-01-25 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107132726B (en) | 2016-02-29 | 2019-11-26 | 上海微电子装备（集团）股份有限公司 | A kind of graphic structure and exposure method of sapphire pattern substrate mask plate |
| CN114779569B (en) * | 2022-03-10 | 2024-07-19 | 威科赛乐微电子股份有限公司 | Photoetching plate and application and chip thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1523443A (en) * | 2003-09-11 | 2004-08-25 | 上海交通大学 | K fraction fractal masking method for preparing material chips |
| CN101779164A (en) * | 2007-07-25 | 2010-07-14 | 单一控制股份有限公司 | Production of stamps, masks or templates for semiconductor device manufacturing |
| CN103197502A (en) * | 2013-03-04 | 2013-07-10 | 西安神光安瑞光电科技有限公司 | Concentric circle mask, graphical substrate and manufacture method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3864870B2 (en) * | 2001-09-19 | 2007-01-10 | 住友電気工業株式会社 | Single crystal gallium nitride substrate, growth method thereof, and manufacturing method thereof |
| WO2009102033A1 (en) * | 2008-02-15 | 2009-08-20 | Mitsubishi Chemical Corporation | Substrate for epitaxial growth, process for producing gan-base semiconductor film, gan-base semiconductor film, process for producing gan-base semiconductor luminescent element, and gan-base semiconductor luminescent element |
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2013
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1523443A (en) * | 2003-09-11 | 2004-08-25 | 上海交通大学 | K fraction fractal masking method for preparing material chips |
| CN101779164A (en) * | 2007-07-25 | 2010-07-14 | 单一控制股份有限公司 | Production of stamps, masks or templates for semiconductor device manufacturing |
| CN103197502A (en) * | 2013-03-04 | 2013-07-10 | 西安神光安瑞光电科技有限公司 | Concentric circle mask, graphical substrate and manufacture method |
Non-Patent Citations (1)
| Title |
|---|
| 图形化蓝宝石衬底GaN基LED的研究进展;周仕忠等;《趋势与展望》;20120630;第37卷(第6期);418页右栏最后一段至第419页左栏第一段 * |
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Granted publication date: 20170125 Termination date: 20181011 |