CN204558515U - For the substrate of flip LED chips - Google Patents
For the substrate of flip LED chips Download PDFInfo
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- CN204558515U CN204558515U CN201520304390.1U CN201520304390U CN204558515U CN 204558515 U CN204558515 U CN 204558515U CN 201520304390 U CN201520304390 U CN 201520304390U CN 204558515 U CN204558515 U CN 204558515U
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- led chips
- flip led
- column structure
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Abstract
The utility model provides a kind of substrate for flip LED chips, comprise: support substrates, lattice matching layers and there is the connection dielectric layer of column structure of periodic arrangement, described lattice matching layers is formed in described support substrates, and described connection dielectric layer to be formed on described lattice matching layers and to expose the described lattice matching layers of part.The utility model is conducive to the internal quantum efficiency and the external quantum efficiency that improve flip LED chips.
Description
Technical field
The utility model belongs to semiconductor optoelectronic chip manufacturing field, particularly a kind of substrate for flip LED chips.
Background technology
GaN base LED is since early 1990s commercialization, and through the development of twenties years, its structure was tending towards ripe and perfect, can meet the demand of people's present stage to decorative lamp; But will replace conventional light source completely and enter lighting field, especially high-end lighting field, the raising of luminosity is but the endless pursuit of LED industry researcher.In recent years, in raising LED luminosity, most active technology is undoubtedly patterned substrate technology, patterned substrate technology does not improve the crystal mass of LED extension by means of only reducing lattice defect (or lattice is adaptive), thus substantially increases its internal quantum efficiency; And improve LED chip light extraction efficiency (improve the external quantum efficiency of LED chip in other words) by increasing the scattering at interface (interface of epitaxial loayer and substrate) place or diffuse reflection effect.Since 2010, no matter be that the dry method patterned substrate technology of cone structure or the wet method pattern substrate technology of Pyramid are obtained for development at full speed, its technique is very ripe, and instead of flat substrate completely in 2012, become the main flow substrate of LED chip, make the crystal structure of LED and luminosity be obtained for revolutionary raising; Can partly replace conventional light source and enter association area, such as, show field, low side lighting field etc.
In order to tackle the challenge of LED high brightness, enter high-end lighting field, the researcher of LED industry proposes the structures such as high voltage LED chip, vertical LED chip and flip LED chips.
High voltage LED chip structure is generally after epitaxial loayer is formed, forms isolation channel by lithographic etch process, then in isolation channel fill insulant, finally on the epitaxial loayer of each insulated separation, make electrode and form cascaded structure; Although this structure can improve the luminosity of LED, but the technical process of formation isolation channel, fill insulant considerably increases the manufacturing cost of chip, moreover, also reduce the reliability of LED chip to a certain extent, the deep etching such as caused because existing etching homogeneity does not reach requirement is unclean, finally can cause electric leakage, reduce the breakdown characteristics etc. of LED chip.
Although vertical LED chip structure does not need etching N district material, reduce a part of production cost of LED to a certain extent, and be suitable for the injection of big current, the luminosity of LED chip can be improved further, but, the same with high-voltage chip, the LED of vertical stratification also needs to form isolation channel, this substantially increases again the production cost of LED, moreover, the chip of vertical stratification also needs to peel off growth substrates, and this improves again the production cost of LED chip again, reduces yield and the reliability of LED chip.
Flip LED chips structure is connected to by formal dress flip-chip on the good substrate of an electrical and thermal conductivity performance, make to generate heat relatively more concentrated light emitting epitaxial layer closer to the hot dirt of heat radiation, most of heat is derived by substrate, instead of derive from the sapphire growth substrate that heat radiation is bad, this alleviates the heat dissipation problem of LED chip to a certain extent, improves the reliability of LED chip; Further, when LED chip area is determined, compared with the LED chip of other structure, the light-emitting area of the LED chip of inverted structure is larger, so having more advantage when the challenge of high-end lighting field high brightness demand; But flip LED chips structure is in the bright dipping of N face, because sapphire refractive index is lower than the refractive index of gallium nitride, so the light that epitaxial loayer shoots out can reflect on sapphire and substrate interface, more light is caused not emit, especially the patterned substrate being applied at present main flow in LED chip structure has again scattering and diffuse reflection effect, more easily cause more light not emit, decrease light extraction efficiency; If but not adopting patterned substrate technology, the internal quantum efficiency of LED chip just can not give full play to.
Utility model content
The utility model provides a kind of substrate for flip LED chips, the crystal mass (i.e. internal quantum efficiency) of flip LED chips can be improved, the reflection of the light from epitaxial loayer directive substrate can be reduced again, increase its transmission, improve the light extraction efficiency (i.e. external quantum efficiency) of flip LED chips.
For solving the problems of the technologies described above, the utility model provides a kind of substrate for flip LED chips, comprise: support substrates, the lattice matching layers identical with the epitaxial loayer crystal structure of described flip LED chips and there is the connection dielectric layer of column structure of periodic arrangement, described lattice matching layers is formed in described support substrates, and described connection dielectric layer to be formed on described lattice matching layers and to expose the described lattice matching layers of part.
Further, described in the substrate of flip LED chips, described flip LED chips is galliumnitride base LED chip, and described lattice matching layers is gallium nitride film or aluminium nitride film.Described support substrates is surperficial smooth Sapphire Substrate.Described connection dielectric layer is silicon dioxide, silicon nitride or silicon oxynitride film.
Further, described in the substrate of flip LED chips, described column structure is column cavity, cylindrical cavities, elliptical cylinder-shape cavity, polygon prism shape cavity, by lattice matching layers described in the expose portion of described column cavity.Further, described column structure is hexa-prism cavity.
Further, described in the substrate of flip LED chips, described column structure is columnar projections, cylindrical protrusions, elliptical cylinder-shape is protruding, polygon prism shape is protruding, by lattice matching layers described in the space expose portion between described columnar projections.Further, described column structure is that hexa-prism is protruding.
Further, described in the substrate of flip LED chips, described lattice matching layers is 0.1 ~ 2 micron with the thickness being communicated with dielectric layer.
The utility model provide in the substrate of flip LED chips, the connection dielectric layer be positioned on lattice matching layers has the column structure of periodic arrangement, because connection dielectric layer is not flat surfaces, be conducive to improving the crystal mass being formed at the epitaxial loayer be communicated with on dielectric layer, and then improve the internal quantum efficiency of flip LED chips; Further, in the surface of support substrates, can not there is light scattering or diffuse reflection in the lateral vertical of described column structure, the reflection of the light from epitaxial loayer directive support substrates can be reduced, increase its transmission, improve the light extraction efficiency of flip LED chips, namely improve the external quantum efficiency of flip LED chips; In addition, described lattice matching layers elects gallium nitride film or aluminium nitride film as, adopt above-mentioned two kinds of materials identical or close with epitaxial film materials lattice can obtain preferably Lattice Matching effect, reduce dislocation defects, improve the internal quantum efficiency of flip LED chips further.
Accompanying drawing explanation
Fig. 1 is the vertical view of the substrate for flip LED chips of the utility model embodiment one;
Shown in Fig. 2 Fig. 1, structure is along the generalized section in AA ' direction;
Fig. 3 is the vertical view of the substrate for flip LED chips of the utility model embodiment two;
Shown in Fig. 4 Fig. 3, structure is along the generalized section in AA ' direction;
Fig. 5 is the vertical view of the substrate for flip LED chips of the utility model embodiment three;
Fig. 6 is the vertical view of the substrate for flip LED chips of the utility model embodiment four.
Embodiment
Below in conjunction with the drawings and specific embodiments, the substrate for flip LED chips that the utility model proposes is described in further detail.According to the following describes and claims, advantage of the present utility model and feature will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, aid illustration the utility model embodiment lucidly.
Embodiment one
Fig. 1 is the vertical view of the substrate for flip LED chips of the utility model embodiment one, and shown in Fig. 2 Fig. 1, structure is along the generalized section in AA ' direction.
As depicted in figs. 1 and 2, the described substrate for flip LED chips comprises: support substrates 10, the lattice matching layers 11 identical with the epitaxial loayer crystal structure of described flip LED chips and have the connection dielectric layer 12 of column structure 12a of periodic arrangement, described lattice matching layers 11 is formed in described support substrates 10, and described connection dielectric layer 12 to be formed on described lattice matching layers 11 and to expose the described lattice matching layers 11 of part.
In the present embodiment, described column structure 12a can be column cavity, exposes described lattice matching layers 11 by described column cavity.Specifically, described column structure 12a is cylindrical cavities.Certainly, because described support substrates 10 is circular substrate, the column structure 12a at described support substrates 10 edge can be incomplete cylindrical cavities, the utility model to the quantity of column structure 12a and arrangement mode without restriction, can adjust accordingly according to actual Butut situation.
Described support substrates 10 is surperficial smooth Sapphire Substrate.The described crystal structure of lattice matching layers 11 is identical with the crystal structure of the epitaxial loayer of flip LED chips, in the present embodiment, described lattice matching layers 11 is gallium nitride film or aluminium nitride film, because the material of epitaxial loayer is generally gallium nitride, thus described lattice matching layers 11 adopt above-mentioned two kinds identical with epitaxial film materials crystal structure, preferably Lattice Matching effect can be obtained, reduce dislocation defects.The described material with the connection dielectric layer 12 of the column structure of periodic arrangement is silicon dioxide, silicon nitride or silicon oxynitride, and above-mentioned material is the material often adopted in LED manufacture craft, and cost is lower.
In the present embodiment, the thickness of described lattice matching layers 11 is 0.1 ~ 2 micron, and be preferably 0.1 ~ 1 micron, the thickness of described connection dielectric layer 12 is similarly 0.1 ~ 2 micron, is preferably 0.1 ~ 1 micron.
When described substrate is for making flip LED chips, support substrates 10 plays a supportive role, lattice matching layers 11 can carry out Lattice Matching with the epitaxial loayer of flip LED chips better, the connection dielectric layer 12 with the column structure of periodic arrangement coordinates the lattice matching layers 11 in support substrates 10 can improve the crystal mass (i.e. internal quantum efficiency) of flip LED chips better, and the lateral vertical of column structure 12a is in the surface of support substrates 10, relative to the bevelled taper of tool or mesa-shaped figure on traditional graph substrate, light scattering or diffuse reflection can not be there is, therefore, it is possible to reduce the reflection from the light of epitaxial loayer directive support substrates 10, increase its transmission, improve the light extraction efficiency (i.e. external quantum efficiency) of flip LED chips.
Embodiment two
Fig. 3 is the vertical view of the substrate for flip LED chips of the utility model embodiment two, and shown in Fig. 4 Fig. 3, structure is along the generalized section in AA ' direction.
As shown in Figure 3 and Figure 4, the difference of the present embodiment and embodiment one is, column structure 12a is columnar projections, is communicated with dielectric layer 12 and is made up of the columnar projections of periodic arrangement, expose described lattice matching layers 11 by the space between described columnar projections.
More specifically, described column structure 12a is cylindrical protrusions.Certainly, because described support substrates 10 is circular substrate, the column structure 12a at described support substrates 10 edge can be incomplete cylindrical protrusions, the utility model to the quantity of column structure 12a and arrangement mode without restriction, can adjust accordingly according to actual Butut situation.
Embodiment three
The difference of the present embodiment and embodiment one is, described column structure 12a is that multi-edge column-shaped is protruding.Fig. 5 is the vertical view of the substrate for flip LED chips of the utility model embodiment three.As shown in Figure 5, the 12a of column structure described in the present embodiment is that hexagon is protruding.
Embodiment four
The difference of the present embodiment and embodiment one is, described column structure 12a is multi-edge column-shaped cavity.Fig. 6 is the vertical view of the substrate for flip LED chips of the utility model embodiment four.As shown in Figure 6, the 12a of column structure described in the present embodiment is hexagon cavity.Find through experiment, when described column structure 12a is hexagon cavity, the luminous efficiency of flip LED chips is particularly outstanding.
Above embodiment is respectively cylindrical protrusions or cylindrical cavities for described column structure, multi-edge column-shaped is protruding or multi-edge column-shaped is empty describes the substrate for flip LED chips of the present utility model, be understandable that, described column structure is not limited to above-mentioned shape, can also be that elliptical cylinder-shape is protruding or elliptical cylinder-shape is empty, or the projection of other polygon prism shapes or cavity, also or the combination of above-mentioned shape.
In sum, substrate for flip LED chips of the present utility model, the connection dielectric layer be positioned on lattice matching layers has the column structure of periodic arrangement, namely described connection dielectric layer is not flat surfaces, the crystal mass of epitaxial loayer can be improved when so forming epitaxial loayer on described connection dielectric layer, be conducive to the internal quantum efficiency improving flip LED chips; And, the lateral vertical of described column structure is in the surface of support substrates, relative to the bevelled taper of tool or mesa-shaped figure on traditional graph substrate, light scattering or diffuse reflection can not be there is, therefore, it is possible to reduce the reflection from the light of epitaxial loayer directive support substrates, increase its transmission, improve the light extraction efficiency of flip LED chips, namely improve the external quantum efficiency of flip LED chips; In addition, described lattice matching layers is gallium nitride film or aluminium nitride film, adopt above-mentioned two kinds of materials identical or close with epitaxial film materials can obtain preferably Lattice Matching effect, reduce dislocation defects, improve the internal quantum efficiency of flip LED chips further.
It should be noted that, in this specification, each embodiment adopts the mode of going forward one by one to describe, and what each embodiment stressed is the difference with other embodiments, between each embodiment identical similar portion mutually see.And; foregoing description is only the description to the utility model preferred embodiment; any restriction not to the utility model scope, any change that the those of ordinary skill in the utility model field does according to above-mentioned disclosure, modification, all belong to the protection range of claims.
Claims (15)
1. the substrate for flip LED chips, it is characterized in that, comprise: support substrates, the lattice matching layers identical with the epitaxial loayer crystal structure of described flip LED chips and there is the connection dielectric layer of column structure of periodic arrangement, described lattice matching layers is formed in described support substrates, and described connection dielectric layer to be formed on described lattice matching layers and to expose the described lattice matching layers of part.
2., as claimed in claim 1 for the substrate of flip LED chips, it is characterized in that, described flip LED chips is galliumnitride base LED chip, and described lattice matching layers is gallium nitride film or aluminium nitride film.
3., as claimed in claim 1 for the substrate of flip LED chips, it is characterized in that, described connection dielectric layer is silicon dioxide, silicon nitride or silicon oxynitride film.
4. as the substrate for flip LED chips in claims 1 to 3 as described in any one, it is characterized in that, described column structure is column cavity, by lattice matching layers described in the expose portion of described column cavity.
5., as claimed in claim 4 for the substrate of flip LED chips, it is characterized in that, described column structure is cylindrical cavities.
6. as claimed in claim 4 for the substrate of flip LED chips, it is characterized in that, described column structure is elliptical cylinder-shape cavity.
7. as claimed in claim 4 for the substrate of flip LED chips, it is characterized in that, described column structure is polygon prism shape cavity.
8. as claimed in claim 7 for the substrate of flip LED chips, it is characterized in that, described column structure is hexa-prism cavity.
9. as the substrate for flip LED chips in claims 1 to 3 as described in any one, it is characterized in that, described column structure is columnar projections, by lattice matching layers described in the space expose portion between described columnar projections.
10., as claimed in claim 9 for the substrate of flip LED chips, it is characterized in that, described column structure is cylindrical protrusions.
11., as claimed in claim 9 for the substrate of flip LED chips, is characterized in that, described column structure is that elliptical cylinder-shape is protruding.
12., as claimed in claim 9 for the substrate of flip LED chips, is characterized in that, described column structure is that polygon prism shape is protruding.
13., as claimed in claim 12 for the substrate of flip LED chips, is characterized in that, described column structure is that hexa-prism is protruding.
14., as the substrate for flip LED chips in claims 1 to 3 as described in any one, is characterized in that, described support substrates is surperficial smooth Sapphire Substrate.
15., as the substrate for flip LED chips in claims 1 to 3 as described in any one, is characterized in that, described lattice matching layers is 0.1 ~ 2 micron with the thickness being communicated with dielectric layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520304390.1U CN204558515U (en) | 2015-05-12 | 2015-05-12 | For the substrate of flip LED chips |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520304390.1U CN204558515U (en) | 2015-05-12 | 2015-05-12 | For the substrate of flip LED chips |
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| CN204558515U true CN204558515U (en) | 2015-08-12 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104835889A (en) * | 2015-05-12 | 2015-08-12 | 杭州士兰明芯科技有限公司 | Substrate for flip LED chips and making method thereof |
| CN104835890A (en) * | 2015-05-12 | 2015-08-12 | 杭州士兰明芯科技有限公司 | Substrate and epitaxial wafer for flip LED chips and making methods thereof |
-
2015
- 2015-05-12 CN CN201520304390.1U patent/CN204558515U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104835889A (en) * | 2015-05-12 | 2015-08-12 | 杭州士兰明芯科技有限公司 | Substrate for flip LED chips and making method thereof |
| CN104835890A (en) * | 2015-05-12 | 2015-08-12 | 杭州士兰明芯科技有限公司 | Substrate and epitaxial wafer for flip LED chips and making methods thereof |
| CN104835890B (en) * | 2015-05-12 | 2017-10-27 | 杭州士兰明芯科技有限公司 | Substrate, epitaxial wafer for flip LED chips and preparation method thereof |
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