CN103575775B - The method and control device of gas parameter are measured by means of gas sensing fet - Google Patents
The method and control device of gas parameter are measured by means of gas sensing fet Download PDFInfo
- Publication number
- CN103575775B CN103575775B CN201310324985.9A CN201310324985A CN103575775B CN 103575775 B CN103575775 B CN 103575775B CN 201310324985 A CN201310324985 A CN 201310324985A CN 103575775 B CN103575775 B CN 103575775B
- Authority
- CN
- China
- Prior art keywords
- voltage
- detection
- grid
- value
- connection terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000001514 detection method Methods 0.000 claims abstract description 71
- 238000005259 measurement Methods 0.000 claims abstract description 64
- 230000005669 field effect Effects 0.000 claims abstract description 51
- 230000008859 change Effects 0.000 claims description 29
- 238000002360 preparation method Methods 0.000 claims description 29
- 238000012360 testing method Methods 0.000 claims description 17
- 230000005611 electricity Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 54
- 239000004065 semiconductor Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 15
- 230000005540 biological transmission Effects 0.000 description 14
- 230000035882 stress Effects 0.000 description 13
- 230000008901 benefit Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 230000006399 behavior Effects 0.000 description 3
- 238000004590 computer program Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000009429 distress Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011534 incubation Methods 0.000 description 1
- 235000000396 iron Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000000108 ultra-filtration Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Molecular Biology (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The present invention relates to a kind of methods measuring gas parameter by means of gas sensing fet.This method has following steps：Apply to the grid of field-effect transistor during time section and prepares voltage.This method also has following steps：The measurement parameter between the source connection terminal and drain connection terminal of field-effect transistor is detected during the detection time section after time section, wherein detection voltage is applied on grid during detecting measurement parameter, there is the detection voltage level value, the numerical value of the level value to be especially less than the absolute value for preparing voltage.Finally, this method has following steps：Gas parameter is determined in the case where using detected measurement parameter.
Description
Technical field
It measures the method for gas parameter by means of gas sensing fet the present invention relates to a kind of, a kind of corresponding set
Standby and a kind of corresponding computer program product.
Background technology
Currently, the sensor of chemical gas based on semiconductor has been in development.In the case, field-effect is given mostly
Transistor（FET）It is equipped with gas sensing electrode, the channel current of the gas sensing electrode is not constant after connecting transistor,
Although atmosphere is constant but still significant changes（It also known as drifts about below）.Such as show in 10 2,007 039 567 A1 of DE
Such drift behavior of gas sensing fet is gone out.In constant atmosphere, channel current indicates baseband signal（Below
Also known as baseline）, each change analyzed as gas sensor signal.The application of gas sensor the particularly important is
Last longer than the drift of 100ms.The reason of drift substantially charge redistributing and do not degenerate in the devices, also
It is back wash effect.By constant bias stress, the starting point of device changes.By turning off device, which can also relaxation again
It goes back.
Invention content
In this context, it proposes to be surveyed by means of gas sensing fet according to independent claims using the present invention
The method for measuring gas parameter, it is also proposed that according to the control device using this method of independent claims arranged side by side, and finally carry
Go out the correspondence computer program product according to independent claims arranged side by side.From corresponding dependent claims and following description
Obtain advantageous expansion scheme.
The present invention provides a kind of method measuring gas parameter by means of gas sensing fet, and wherein this method has
Following steps：
Apply to the grid of field-effect transistor during time section and prepares voltage；
The source terminal of field-effect transistor is detected during the detection time section after time section
Measurement parameters between son and drain connection terminal, wherein detection voltage is applied to grid during detecting measurement parameters
On, there is the detection voltage level value, the numerical value of the level value to be especially less than the absolute value for preparing voltage；And
Gas parameter is determined in the case where using detected measurement parameters.
The present invention also provides a kind of control device, it is configured to execute, control or implement basis in corresponding equipment
The step of method of the present invention.The implementation modification in the form of control device through the invention, can be quickly and to effectively
Solve the task that the present invention is based on.
Here, control device can be understood as to a kind of electrical equipment, which handles sensor signal and root
Control signal and/or data-signal are exported according to the sensor signal.The control device can have interface, and the interface can be with base
It is constructed in hardware and/or software.In hardware based construction, it includes control device that the interface, which for example can be so-called,
Various functions system ASIC a part.But it is still possible that the interface is own integrated circuit or at least
Partly it is made of discrete device.In the construction based on software, the interface especially can be for example except other software modules
Except exist in the software module on microcontroller.
Advantageous to also have a kind of computer program product with program code, which can be stored in machine can
It reads on carrier, such as semiconductor memory, harddisk memory or optical memory, and in the program product in computer, device
Or the program code is used to carry out or controls the method according to one of aforementioned embodiments when being executed on control device
Step.
Such as gas parameter can be understood as to the concentration or type for the predetermined gas being made of admixture of gas or fluid.
Grid can be understood as to the electrode of the grid as field-effect transistor, the electrode is realized by admixture of gas or fluid structure
At gas receiving or storage, and thus the electrical characteristics of grid or capacitance characteristic change.It in this way, such as can be with
In the case of the gas with various type or gas concentration contacted with grid or gate electrode, source connection terminal is caused to be connect to drain electrode
The electric behavior of difference of field-effect transistor or resistance between line terminals.It can will prepare voltage and be understood as following voltage：Institute
It states voltage to be applied on grid during specific incubation period, to make the raceway groove of field-effect transistor or field-effect transistor
It is ready for next measurement.Such as measurement parameters can be understood as the source connection terminal of scene effect transistor with
The resistance or electric current occurred between drain connection terminal.Here, during the step of detecting, apply detection voltage on grid,
The level value that the detection voltage has the absolute value of numeric ratio detection voltage small.Here, can voltage be understood as level value
Occurrence.The absolute value for detecting voltage or preparation voltage can be understood as detection voltage or prepare the numerical value of voltage.
The understanding that the present invention is based on is field-effect transistor should to be made as well as possible before accurately measuring gas parameter
Ground is to measure to be ready to.Electricity can be prepared by applying to the grid of field-effect transistor to the preparation of field-effect transistor
It presses to carry out, the voltage itself for preparing is with the absolute of the numerical value bigger than the detection voltage used in the following step
Value, so as to actually detected measurement parameters.Here, can have significantly larger positive or negative voltage value by using than detection voltage
Preparation voltage ensure：Such as interference position can be neutralized for the semi-conducting material of the channel region of field-effect transistor
It sets.This can for example be carried out in the following way：Pass through（It is high compared with detecting voltage）Prepare voltage to lead to channel region
Removable mobile carriers in domain are moved towards the mobile or separate grid of grid.By this way, can make field-effect transistor or
The channel region of field-effect transistor is that point-device next measurement is ready to, wherein institute can be compensated as well as possible
State the impurity or disturbing effect that uncertain electro ultrafiltration will be played when measuring in channel region.Then, in order to following
Measurement parameters are measured, survey can be executed using the lower detection voltage at grid in back to back detection time section
Measure the measurement of parameter.Therefore, the channel region of field-effect transistor is in applying the period after preparing voltage
With still advantageous measurement characteristic, the measurement characteristic still maintains after cancelling preparation voltage more than the regular period.
Advantage for present invention is so that field-effect transistor is ready to by applying preparation voltage to grid, can
To realize the apparent better detection to measurement parameters compared with institute's energy in the prior art.Thus also become it is possible that bright
Aobvious more accurately detection gas parameter, wherein it is only necessary to change the connecting terminal to field-effect transistor compared with the existing technology
Control or application.It is possible thereby to real using gas sensing fet using technical very simple means
The detection of existing measurement parameters and the thus measurement of gas parameter are obviously improved.
It according to embodiment of the present invention, can be in the determining step using only being detected in detecting step
The case where measurement parameters, gets off determining gas parameter.Such embodiment of the present invention ensures：The measurement parameters only when（With
Absolutely prepare voltage compared to smaller）Detection voltage is just considered for determining gas when being applied on the grid of field-effect transistor
Body parameter.In this way, it is, for example, due on grid that interference effect, the interference effect are avoided when determining gas parameter
Overtension and thus except the operating point of scene effect transistor run field-effect transistor caused by.
Another embodiment according to the present invention can also apply to grid in applying step and detect voltage with not
With the preparation voltage of symbol, or applies to grid wherein in applying step and detect preparation electricity of the voltage with the same symbol
Pressure.It can also for example apply in step using the preparation voltage with the first symbol first at this, and applied next
Add in step using the preparation voltage with second symbol opposite with the first symbol.Such embodiment of the present invention is carried
For the advantages of be that field-effect transistor or its electrical characteristics can be " reset " and therefore can also technically particularly simple
It is placed in initial state again in compared with long running duration.Can also for for measure the different application environment of gas parameter come
Optimize the measurement.
Particularly advantageously the step of an embodiment of the invention, wherein this method, repeats at least once.This
The situation that the embodiment of invention is based on is carried again by mobile after certain duration after revocation prepares voltage
It flows sub- relaxation and returns to home position.The present invention, with repeatedly but such embodiment of repeating said steps at least once
It is provided the advantage that, removable mobile carriers can be cancelled again from field-effect crystalline substance more than the longer term when measuring measurement parameters
Drifting out in the channel region of body pipe and therefore also point-device measurement of the realization to measurement parameters in the longer term,
Therefore this ensure that highly precisely determines gas parameter also above the longer term.
Particularly advantageously one embodiment of the present of invention, wherein the application step for the execution that follows one another be performed as so that
The time section applied in step is different from each other, and/or the detecting step for the execution that follows one another is performed as so that detecting step
Detection time section in rapid is different from each other.For example, the first time section can be more than section of next second time, or
The first detection time of person section can be more than next second detection time section.Alternatively, or in addition, the first time
Section might be less that back to back first detection time section and/or the second time after the first detection time section
Section is less than the second detection time section after the second time section.In this way, can extremely flexibly by
The preparation of field-effect transistor and respective environment scene（Such as field-effect transistor is exposed in specific gaseous environment or special
At fixed temperature）Or the parameters of field-effect transistor（Such as the semiconductor parameter of field-effect transistor）Match,
Middle field-effect transistor is used in such environment scene leads to the differential responses of field-effect transistor during operation.
It is especially matched to following measurement parameters with the current operating condition of the difference of field-effect transistor in order to realize
The preparation of detection can also also execute the step of determining state value after detecting step.Here, the state value indicates field-effect
The physical state in channel region between the source connection terminal and drain connection terminal of transistor.Meanwhile it can apply
In step, apply the preparation voltage dependent on the state value to grid.Such as such state value can be interpreted as to interference position
Charge in the channel region of the concentration or field-effect transistor set.The advantages of such embodiment of the present invention is provided
It is that can highly precisely adjust to prepare voltage so as to by the optimum state of the channel region of field-effect transistor（Especially reflect
In possible interference effect）To be then ready to the detection of measurement parameters.
Another embodiment according to the present invention, can be in applying step in source connection terminal and drain connection terminal
Between apply the test voltage of rising followed by apply the test voltage declined, and measure source connection terminal and connect with drain electrode
The change curve of electric current between line terminals.Here, can be in detecting step in source connection terminal and drain connection terminal
Between the voltage that applies depend at least one value of the measured change curve from electric current.Here, can will be such
Test voltage is understood as the sequence or change curve of voltage, and the voltage is applied on grid and is determined for passing through field
Effect transistor measures the optimal working point of gas parameter.The embodiment of the invention is provided the advantage that, survey is passed through
The optimal working point that voltage is adjusted can be realized during detecting measurement parameters by trying the change curve of the raising and lowering of voltage.It is logical
Crossing this sample loading mode can be immediately in practically detecting for determining that the measurement parameters of gas parameter are previously determined operating point, current
The field-effect transistor has its maximum sensitivity since the operating point in usage scenario.This leads to the high-precision of gas parameter again
Degree determines.
Particularly advantageously an embodiment of the invention, wherein when test voltage rises when for previously given
The change curve value of the electric current of test voltage value with when test voltage declines for the electric current of previously given test voltage value
When the numerical value of the difference of the value of change curve is more than predefined threshold value, source connection terminal and leakage will be applied in detecting step
Voltage between the connecting terminal of pole is changed to second voltage value from the first voltage value.What the embodiment of the invention was provided
Advantage is, such as applies predefined detection voltage value to grid in detecting step, which only imitates when through interlude
The hysteresis curve of the electric current of the raceway groove of transistor is answered according to test voltage to there is current segment indicatrix to rise in test voltage
Or decline when too great deviations when just change.Such too great deviations of current segment indicatrix are it can be concluded that utilizing
Detection voltage used to date is come may in the channel region of detection field-effect transistor during detecting measurement parameters
There is charge reversal process so that in order to avoid such charge reversal process needs that the detection of voltage and measurement parameters will be detected
Match.
Description of the drawings
Then according to attached drawing, illustratively the present invention is further explained.
Fig. 1 is shown according to an embodiment of the invention measures gas parameter by means of gas sensing fet
The block diagram of control device；
Fig. 2 shows being applied on the grid of field-effect transistor for one embodiment according to the present invention as method
Voltage change curve figure；
Fig. 3 shows being applied on the grid of field-effect transistor of another embodiment according to the present invention as method
Another voltage change curve figure；
Fig. 4 shows being applied on the grid of field-effect transistor of another embodiment according to the present invention as method
Another voltage change curve figure；
Fig. 5 shows the state change figure of the step of embodiment as method for showing the present invention；And
Fig. 6 A and 6B show according to an embodiment of the invention determining for detecting measurement parameters for illustrating
The figure of optimal working point.
Specific implementation mode
Below in the description of the preferred embodiment of the present invention, being to be shown in different attached drawings and act on similar element
Using same or analogous reference numeral, wherein abandoning the repeated description to these elements.
Fig. 1 shows the principle arrangement for the gas sensing fet 100 that can be controlled by control device 110.This
Effect transistor has air-sensitive grid 115, can store or invade from gas or fluid mixture at the air-sensitive grid 115
125 gas component 120, wherein to determine that the gas from the gas component 120 is joined by means of field-effect transistor 100
Number.Grid 120 passes through（Air-sensitive）Separation layer 130 is by the channel region 135 of field-effect transistor 110, and the channel region 135 is by source
Pole connecting terminal region 140 is connect with the drain connection terminal area 145 of field-effect transistor 100.
Control device 110 includes unit 150, is used to apply preparation voltage to grid 115 to lead to channel region 135
In semi-conducting material specific physical state.For example, following voltage can be selected as voltage is prepared：The voltage according to
Next numerical value is higher than is applied to the voltage on grid 115 to measure the electric current in the channel region as measurement parameters
（Detect voltage）.After applying preparation voltage to grid 115, such as switch 155 can be switched, which makes now
Unit 160 for detection can give grid 115 to apply less than the detection voltage for preparing voltage.It alternatively, such as can also
It is by the control of unit 150 so that the voltage being applied on grid 115 now drops to detection voltage（Or the quilt when symbol is opposite
It improves）, wherein the switch 155 that need not be then arranged and then must be switched.Therefore to grid 115 apply detection voltage with
Afterwards, measurement parameters 165 can be measured or detect, herein for by between source connection terminal 140 and drain connection terminal 145
Resistance between the electric current or source connection terminal 140 and drain connection terminal 145 of channel region, to join the measurement
Amount 165 is sent to for determining unit 170, and in the unit 170, determination is aforementioned using measurement parameters 165
Gas parameter 175.Especially repeatedly successively, for example it can periodically apply to grid using voltage is detected
Prepare voltage and next detection measurement parameters.
The important background of the present invention is, and then for constant sensor base line this purpose after connecting transistor
And electric drift is made to minimize.The transistor of interference position density with the raising in channel region 135 shows stronger drift
It migrates to change operating point during its operation.By the change, it cannot be inferred to actual measurement point again, or due to
Unpredictalbe change of operating point obtains other shortcomings.The possibility that the scheme herein proposed is provided is prevented in device
Voltage drift.
The position change of moving iron in oxygen can also change field or characteristic in channel region, and therefore lead to work
Make the change of point.The effect can also be improved by the present invention proposed.
In order to use chemically sensitive gas sensor, operation reserve is needed, to make the stress on device minimize.
This scheme proposed provides adjustment parameter, can be by the strategy and to device using the adjustment parameter（I.e. field-effect is brilliant
Body pipe）Application match.
The importance of the present invention is dynamic operation, i.e., gas sensitive device is not with constant voltage but uses and define
Operation reserve run.By using（Field-effect）Constant bias stress on transistor, can realize in operation（Especially
It is in channel region）The defined state of the distribution of the saturation of interference position and thus moving iron and thus constant
Operating point.Here, the device is not run in constant operating point, but also in working voltage（Prepare voltage and detection voltage）
It is run in stress point or stress time section or time section in the case of change.The scheme herein proposed is therefore using constant
The effect of deviated stress to realize constant state in operation（Especially in the channel region for measuring measurement parameters
In 135）.
Next the work side of the principle of the scheme herein proposed will be further described with reference to the figure of figure 2
Formula.In the figure, reference（On abscissa）Different moments t depicts the voltage being applied on grid 115 on ordinate
Change curve.Connecting transistor 100（Connecting moment t1Start to initialize the method for determining gas parameter）After,
Prestressing force was loaded to the transistor 100 before actual measurement or control operation, i.e., in moment t2With t3Between time
Section t23In apply to grid 115 and prepare voltage UVS.Possible " stress " is for example far beyond actual operating point（I.e. next
Detection time section in operating voltage UES）Ground applies high grid voltage U to gridG, without applying drain voltage（I.e. source electrode connects
Voltage between line terminals and drain connection terminal）.Although will no electric current flow through transistor 100（Channel region）, but
It is the saturation that the High-Field will move electronics in grid and cause oxygen abort situation.In time section t23At the end of when
Carve t3, apply detection voltage U to grid 115ES, and when detecting between section t34Period, detection measurement parameters 165 to moment t4,
It is, for example, the electric current for passing through channel region 135 after applying voltage between source region 140 and drain region 145 herein.Cause
This, can be in unit 170 from gas by recognizing effect of the gas component 120 to the electrical characteristics of grid 115 or separation layer 130
Measurement parameters 165 are determined in body parameter 175.
The stress of transistor 100（Apply to grid 115 and prepares voltage UVS）It can also repeat during operation, so as to
Reset drift again during runtime.For this purpose, for example can be in moment t4（That is the finish time of detection time section）After
It executes again（It is now shorter）Time section t45Period applies to grid 115 and prepares voltage UVSUntil moment t5Step
Suddenly, because transistor 100 is in the first application step in time period t23In be ready so that now only need refreshing ditch
The expectation state of semi-conducting material in road region 135.It hereafter, can be then in another detecting step in the second detection time
Section t56In detect measurement parameters again until moment t6, wherein can equally determine gas parameter again from the measurement parameters
175.It by this way, can be by preparing the repetition period of transistor and then the detection measurement ginseng during in the period of arbitrarily long
Amount, can measure the high-precision measurement or detection of parameter, and then gas parameter can be determined from the measurement parameters.
Alternatively or in another application environment, such as it can also be used in the one or more steps of the application
With detection voltage UESPreparation voltage U with distinct symbolsVS.It thus for example can be otherwise or with reference to other interference
The neutralisation of the effect of position or other moving irons optimizes the channel region 135 of transistor 100, and to just look like this can pass through
It is realized like that using the preparation voltage with detection voltage the same symbol.Here, one or more times sections can with
Select one or more preparation similar or identical length of voltage when preparation voltage identical with detection voltage sign.But it should protect
Card：Value of the absolute value always greater than detection voltage for preparing voltage, because can ensure in this way：Channel region 135
Semi-conducting material interference electrical characteristics by apply grid 115 compensated.Fig. 3 shows grid voltage UGTime change
The principle figure of curve, wherein using the preparation voltage U with detection voltage UES with distinct symbolsVSThe case where get off to grid
Pole 115 applies grid voltage UG。
In other words, another possibility is that, apply negative stress to transistor, which drives 100 depth of transistor
It moves in accumulation.In the operating status of accumulation, transistor 100 is not turned on, but is existed and Reversion phase in raceway groove 135
Than opposite carrier.But the carrier can also lead to the saturation of oxygen carrier.It is more according to the interference position in oxygen
With acceptor property still for body characteristics, thus it is possible to vary different stress mechanisms.It is shown in the graph in fig. 3 using back bias voltage
（Prepare voltage）In the case of processing mode such case.Stress field at high temperature can equally cause the movement in oxygen from
The displacement of the definition of son.It may be said that by applying stress voltage, device is before actual motion with regard to advance aging.
In addition it is also possible to for example in detecting step（I.e. in time period t23Period）It measures or detection measurement parameters is surveyed later
400 drift of amount or interference position concentration, this is illustratively shown in the figure of Fig. 4.Here, diagram according to fig. 3 uses
With detection voltage UESPreparation voltage U with distinct symbolsVS.Then the result of the measurement is determined for next
Applying to grid 115 for being executed in step prepares voltage so that will for example prepare voltage and is chosen so as to that raceway groove can be compensated
Semi-conducting material in region 135 in the channel region 135 drift behavior or the effect of interference position concentration.By this
Mode can positively identify interference position concentration in detecting step and speed when the voltage on being applied to grid 115 declines
Henan, and can be brought into semi-conducting material for detection measurement parameters most again as quickly as possible again according to current state
Excellent state.Measuring 400 drifts/interference position concentration for example can be by voltage UGIt is applied on grid 115, voltage UGAccording to
Absolute value is than preparing voltage UVSHigher（And has and prepare voltage UVSDifferent symbols）.It is possible thereby to identify that influence measures
The current interference position concentration of the drift of parameter.Then in response to measured drift or interference position concentration, Ke Yi（The
Two）Apply in step in the second time section t45Period selection prepares voltage, but this is currently not shown in Fig. 4, because
Use herein with the first time section t23In first apply during identical preparation voltage UVSValue.This in Fig. 4 by
Reference numeral 410 indicates.
Fig. 5 shows the side according to the present invention for being measured gas parameter by means of gas sensing fet 100
The principle flow chart of the embodiment of method 500.In order to show the embodiment of method 500, thus according to the processing mode shown in Fig. 4
Use the application to grid 115.Here, starting 510 methods 500 in the first step（Such as t at the time of Fig. 11）.In the case where connecing
Following steps are carried out in the step come：In time section t23Period applies 520 to the grid of field-effect transistor 100 and prepares electricity
Press UVS（The application step 520 can also be referred to as applying " prestressing force " to transistor）.Then, tight in detecting step 520
The source connection terminal and drain terminal of field-effect transistor are detected during being connected on the later detection time section of time section
Measurement parameters between son, wherein detection voltage is applied on grid during detecting measurement parameters, the detection voltage is than accurate
The absolute value of standby voltage has smaller level value.In this step, field-effect transistor is in known operational mode（Also known as transport
Row）Lower work.It, can be in next determining step 535 if detecting measurement parameters in the detecting step 530 now
Using measurement parameters（I.e. from measurement parameters）Determine gas parameter.In another following step, measure
The drift of 540 measurement parameters is especially indicated as state value 547, the measurement parameters to the semiconductor in channel region 135
The instruction of the physical state of material.The measuring process 540 can also be understood as that another next apply step 545 one
Point.After measuring process 540, it can be calculated in calculating step 540（New）Prepare voltage UVS1, preparation voltage UVS1With
In next application step 520.It is calculated to the application of grid 115（It may be changed）Preparation voltage UVS1After, now
It is detected the step 530 of measurement parameters again and determines the step 535 of gas parameter from measurement parameters.
Therefore, scheme described here realizes a kind of processing mode, wherein running（State）Period（Or later）
Apply the drift for being temporarily switched under stress mode and fighting operating point in the case of preparing voltage again to grid 115.
Furthermore, it is possible in order to adjust out the preparation voltage coordinated as far as possible with concrete application situation after more accurately controlling
Calculate the pervious or preparation voltage.In such scheme, there is a possibility that it is another, i.e., for example by means of other measurement methods
Drift caused by measuring, and the stress signal for being applied to the drift is calculated from measured interference position.For this purpose, for example
The well known charge pumping method from semiconductor fabrication can be used（Charge-Pumping-Verfahren）（It may be with
The form of variation）.Charge pumping method（Or the method being derived from）Therefore it can be used for determining in field-effect transistor 100
Accumulation starting point.But it is different from charge pumping method, which does not need the 4th terminals at transistor 100
Son.
Make it possible to measure bandlet voltage during operation using such scheme, wherein the transistor can by depth
In pulsed control to accumulation.This is by temporarily applying negative voltage（Such as in the case of n-type transistor）Come carry out.
This, if reaching bandlet voltage, interference position is by charge reversal.Bandlet voltage should be understood as to the voltage applied from outside,
The voltage induces minimum electric field in the semiconductors.Then if measuring the transfer curve 600 of transistor（Indicate
Reference drain connection terminal 145 is in source connection terminal 140 and drain connection terminal in the case of applying voltage on grid 115
The indicatrix of electric current between 145）, then can determine：Whether interference position is by charge reversal.Field is shown in Fig. 6 A and 6B
Such transmission feature curve 600 of effect transistor 100, wherein in order to determine transmission feature curve 600, first by rising
Voltage level is applied on grid 115, to obtain the first of transmission feature curve 600（Rise）Branch 610, and then
The voltage level of decline is applied on grid 115, to obtain the second of transmission feature curve 600（Decline）Branch 620.
Here, the transmission feature curve 600 for the case where being shown in fig. 6 for less than bandlet voltage, and needle is shown in fig. 6b
The transmission feature curve of the case where to not less than bandlet voltage.Here, the gradient of transmission feature curve 600 is according to being applied to grid
Voltage on 115 and change, be similarly formed rising（Branch 610）With decline（Branch 620）Between the transmission feature curve that measures
Lag.Here, show transmission feature curve 600 in fig. 6, wherein source connection terminal 140 and drain connection terminal
Electric current between 145 rise on the gate voltages in the case of the value that declines in grid voltage with the electric current of value（Join respectively
According to identical gate voltage values 640）Between there are big poor 630, this can be inferred that in the semi-conducting material of channel region 135
Interference position charge reversal.Only existed in the transmission feature curve 600 of Fig. 6 B on the contrary on the gate voltages rise or under
Drop（Equally respectively refer to identical grid voltage 640）In the case of by channel region electric current small poor 630.In this way
The scheme introduced herein can determine：Under which voltage at grid, the interference in semi-conducting material in channel region
The charge reversal effect of position no longer occurs so that the interference shadow of the detection to measurement parameters is no longer contemplated that in the voltage
It rings.Therefore pass through to make since which voltage interference position effect neutralisation the test, it may be determined that operating point or
It determines specifically to be directed to current application scene or measure scene and is used to measure the detection voltage of measurement parameters, which will be
Detection is applied to during period on grid.For example, can also carry out making rising to the analysis of the transmission feature curve 600
Value on transmission feature curve 610 is more than threshold value, i.e. measurement parameters relative to the difference of the value on the transmission feature curve 620 of decline
Drift it is excessive and therefore can no longer be tolerated.In this case, it then can match or change the detection for detection
Voltage, such as increase or decrease detection voltage.It can be determined by testing multiple negative voltages：Whether it is more than flat in relevant voltage
Band.More than bandlet voltage, transmission curve moves specific voltage range.
The present invention can be used for all sensors with the device based on field-effect based on semiconductor, particularly be used for
The gas sensor based on semiconductor with transistor.
It is described and in the accompanying drawings shown in embodiment be only by exemplary selection.Different embodiments can completely or
It is combined with each other with reference to each feature.One embodiment can also be supplemented by the feature of another embodiment.
In addition, steps of a method in accordance with the invention can be repeated or be executed with the order different from the order.
If one embodiment includes the "and/or" conjunction between fisrt feature and second feature, this refers to, the implementation
Example has fisrt feature and second feature according to one embodiment, otherwise and it is only special with first according to another embodiment
Or sign only has second feature.
Claims (8)
1. by means of gas sensing fet（100）Measure gas parameter（175）Method（500）, wherein this method（500）
With following steps：
In time section（t23）Period is to field-effect transistor（100）Grid（115）Apply（520,545）Prepare voltage
（UVS）；
Immediately in time section（t23）Detection time section later（t34）Period is detected（530）The field-effect is brilliant
Body pipe（100）Source connection terminal（140）With drain connection terminal（145）Between measurement parameter（165）, wherein detecting
（530）The measurement parameter（165）During will detect voltage（UES）It is added in the grid（115）On, the detection voltage tool
There is a level value；And
Using detected measurement parameter（165）In the case of determine（535）The gas parameter（175）,
It is characterized in that, in the detection（530）The step of after also execute determination（540,550）State value（547）The step of,
The wherein state value（547）Indicate the field-effect transistor（100）Source connection terminal（140）With drain connection terminal
（145）Between channel region（135）In physical state, wherein in the application（520,545）The step of in give the grid
Pole（115）Apply and depends on the state value（547）Preparation voltage（UVS1）.
2. according to the method for claim 1（500）, which is characterized in that in the determination（535）The step of in using only
Only in the detection（530）The step of in the measurement parameter that detects（165）In the case of determine the gas parameter（175）.
3. the method according to one of preceding claims（500）, which is characterized in that in the application（520,545）Step
The grid is given in rapid（115）Applying has and the detection voltage（UES）The preparation voltage of distinct symbols（UVS）, or wherein
In the application（520,545）The step of in give the grid（115）Applying has and the detection voltage（UES）The same symbol
Preparation voltage（UVS）.
4. the method according to one of claim 1 to 2（500）, which is characterized in that this method（500）The step of repeat hold
Row is at least once.
5. according to the method for claim 4（500）, which is characterized in that the application for the execution that follows one another（520,545）
The step of be performed as so that the application（520,545）The step of in the preparation voltage（UVS）It is different from each other and/or that
This detection executed in succession（530）The step of be performed as so that the detection（530）The step of in detection time section
（t34, t56）It is different from each other.
6. the method according to one of claim 1 to 2（500）, which is characterized in that in the application（520,545）Step
In the grid in rapid（115）It is upper to apply the test voltage risen（U）And then apply the test voltage declined（U）, and measure
The source connection terminal（140）With the drain connection terminal（145）Between electric current（I）Change curve（600）, wherein
In the detection（530）The step of in the source connection terminal（140）With the drain connection terminal（145）Between apply
Voltage depend on come from the electric current（I）Measured change curve（600）At least one value.
7. according to the method for claim 6（500）, which is characterized in that it is previously given when being directed to when test voltage rises
Test voltage value（640）Electric current（I）Change curve（600）Value with when test voltage declines for previously given
Test voltage value（640）Electric current（I）Change curve（600）Value difference（630）Numerical value be more than predefined threshold value when,
In the detection（530）The step of in will be applied to the grid（115）On voltage from the first voltage value be changed to second electricity
Pressure value.
8. control device（110）, it is configured in corresponding unit（150,160,170）Middle execution or control are wanted according to right
The method for asking one of 1 to 7（500）The step of.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102012213429.8 | 2012-07-31 | ||
| DE102012213429.8A DE102012213429A1 (en) | 2012-07-31 | 2012-07-31 | Method and control device for measuring a gas parameter using a gas-sensitive field-effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103575775A CN103575775A (en) | 2014-02-12 |
| CN103575775B true CN103575775B (en) | 2018-08-17 |
Family
ID=49943942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310324985.9A Active CN103575775B (en) | 2012-07-31 | 2013-07-30 | The method and control device of gas parameter are measured by means of gas sensing fet |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6238622B2 (en) |
| CN (1) | CN103575775B (en) |
| DE (1) | DE102012213429A1 (en) |
| FR (1) | FR2994266B1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT201700035910A1 (en) | 2017-03-31 | 2018-10-01 | St Microelectronics Srl | OPTOELECTRONIC DEVICE FOR THE SELECTIVE DETECTION OF VOLATILE ORGANIC COMPOUNDS AND ITS MANUFACTURING PROCEDURE |
| KR102249665B1 (en) * | 2019-05-10 | 2021-05-10 | 한양대학교 산학협력단 | Gas sensing ability enhancing apparatus using the bias and method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4698657A (en) * | 1984-02-10 | 1987-10-06 | Sharp Kabushiki Kaisha | FET type sensor and a method for driving the same |
| JPH05312778A (en) * | 1992-05-14 | 1993-11-22 | Fuji Electric Co Ltd | Ion concentration sensor |
| CN101142476A (en) * | 2005-03-18 | 2008-03-12 | 毫微-专卖股份有限公司 | Gated gas sensor |
| CN101779121A (en) * | 2007-07-24 | 2010-07-14 | 罗伯特.博世有限公司 | Method and device for the detection of substances |
| EP2362216A1 (en) * | 2010-02-27 | 2011-08-31 | Karlsruher Institut für Technologie | Carbon nanotube SB-FET hydrogen sensor and methods for its manufacture and operation |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101573612B (en) * | 2007-01-04 | 2013-02-13 | 皇家飞利浦电子股份有限公司 | Method, detector and system for measuring a sample concentration |
| DE102007029153A1 (en) * | 2007-06-25 | 2009-01-08 | Robert Bosch Gmbh | Semiconductor gas sensor with additional functionalities of the signal-forming electrode |
| DE102007039567A1 (en) | 2007-08-22 | 2009-02-26 | Robert Bosch Gmbh | gas sensor |
| DE102007040726A1 (en) * | 2007-08-29 | 2009-03-05 | Robert Bosch Gmbh | gas sensor |
| JP5235215B2 (en) * | 2008-07-10 | 2013-07-10 | 株式会社イデアルスター | Gas sensor |
| FR2969294A1 (en) * | 2010-12-17 | 2012-06-22 | Alcatel Lucent | METHOD FOR REGENERATING A HYDROGEN SENSOR |
-
2012
- 2012-07-31 DE DE102012213429.8A patent/DE102012213429A1/en active Pending
-
2013
- 2013-07-30 CN CN201310324985.9A patent/CN103575775B/en active Active
- 2013-07-30 FR FR1357520A patent/FR2994266B1/en active Active
- 2013-07-31 JP JP2013158813A patent/JP6238622B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4698657A (en) * | 1984-02-10 | 1987-10-06 | Sharp Kabushiki Kaisha | FET type sensor and a method for driving the same |
| JPH05312778A (en) * | 1992-05-14 | 1993-11-22 | Fuji Electric Co Ltd | Ion concentration sensor |
| CN101142476A (en) * | 2005-03-18 | 2008-03-12 | 毫微-专卖股份有限公司 | Gated gas sensor |
| CN101779121A (en) * | 2007-07-24 | 2010-07-14 | 罗伯特.博世有限公司 | Method and device for the detection of substances |
| EP2362216A1 (en) * | 2010-02-27 | 2011-08-31 | Karlsruher Institut für Technologie | Carbon nanotube SB-FET hydrogen sensor and methods for its manufacture and operation |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2994266A1 (en) | 2014-02-07 |
| JP2014032194A (en) | 2014-02-20 |
| JP6238622B2 (en) | 2017-11-29 |
| FR2994266B1 (en) | 2017-06-23 |
| CN103575775A (en) | 2014-02-12 |
| DE102012213429A1 (en) | 2014-02-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Friedlein et al. | Microsecond response in organic electrochemical transistors: exceeding the ionic speed limit | |
| CN101341398B (en) | Sensor circuits | |
| US8030942B2 (en) | Method and apparatus for providing stable voltage to analytical system | |
| CN107428359A (en) | Steering wheel grips detection means | |
| CN104937402B (en) | PH value measuring device including calibrated in situ device | |
| CN103575775B (en) | The method and control device of gas parameter are measured by means of gas sensing fet | |
| US5235267A (en) | Circuit and a method for measuring a quantity influencing the capacitance-voltage characteristic of a capacitive element | |
| CN107045993A (en) | Electro-migration testing device, electro-migration testing system and its method of testing | |
| KR101512107B1 (en) | Apparatus and method for measuring electric conductivity | |
| US9546976B2 (en) | Method and apparatus for measurement of the oxygen content or the oxygen partial pressure in a measurement gas | |
| CN108716963A (en) | The performance test methods of pressure sensor | |
| CN104808041B (en) | A kind of method of testing and device of nitrogen oxide sensor chip pumps electric current | |
| Fischer et al. | Pulsed polarization of platinum electrodes on YSZ | |
| RU2013118440A (en) | METHOD OF CAPACITY MEASUREMENT AND ITS APPLICATION | |
| JP5964678B2 (en) | Oxygen sensor control device | |
| CN103166640B (en) | For monitoring the method and system of the change of converter voltage reference | |
| US20200103292A1 (en) | Temperature detection device and method | |
| CN113702824A (en) | Threshold voltage testing method and system for switching device with negative threshold voltage | |
| CN109682876A (en) | Impedance measurement semiconductor circuit and blood glucose level instrument | |
| CN101779121A (en) | Method and device for the detection of substances | |
| CN104569866A (en) | Temperature correction unit and correction method as well as applicable superconducting quantum interference sensor | |
| KR20180059222A (en) | Minority Carrier Measuring Apparatus of Materials of Semiconductors and Minority Carrier Measuring Method of Materials of Semiconductors | |
| RU2229692C2 (en) | Procedure establishing temperature | |
| RU2131602C1 (en) | Device for potentiostatic and galvanostatic measurements with automatic compensation for ir error | |
| CN110220618B (en) | Integrated panel and test method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |