CN103575775A - A method and control apparatus for measuring a gas parameter by means of a gas-sensitive field effect transistor - Google Patents
A method and control apparatus for measuring a gas parameter by means of a gas-sensitive field effect transistor Download PDFInfo
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- CN103575775A CN103575775A CN201310324985.9A CN201310324985A CN103575775A CN 103575775 A CN103575775 A CN 103575775A CN 201310324985 A CN201310324985 A CN 201310324985A CN 103575775 A CN103575775 A CN 103575775A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
Abstract
The invention relates to a method for measuring a gas parameter by means of a gas-sensitive field effect transistor. The method comprises the step of applying a preparation voltage to a gate electrode of the field effect transistor during a preparation period. Further, the method includes a step of detecting of a measured parameter between a source terminal and a drain terminal of the field effect transistor during a detection period immediately following the preparation period, wherein a detection voltage is applied to the gate electrode during detecting the measured parameter and has a level value, and, in particular, the amount of the level value is smaller than an absolute value of the preparation voltage. Finally, the method comprises a step of determining the gas parameter by means of the detected measured parameter.
Description
Technical field
The present invention relates to a kind of computer program that comes the method for measurement gas parameter, a kind of equipment of correspondence and a kind of correspondence by means of gas sensing fet.
Background technology
Current, the sensor of chemical gas of based semiconductor is in development.In the case, be equipped with gas sensing electrode mostly to field effect transistor (FET), the channel current of described gas sensing electrode is not constant after connecting transistor, although but atmosphere is constant but still marked change (also claiming drift below).Such drift behavior of gas sensing fet has for example been shown in DE 10 2,007 039 567 A1.In constant atmosphere, channel current represents baseband signal (also claiming baseline below), and each change is analyzed as gas sensor signal.Application for gas sensor the particularly important is the drift that continues to be longer than 100ms.The reason of this drift is electric charge redistributing and not degenerating in device, namely back wash effect substantially.By constant bias stress, the starting point of device changes.By turn-offing device, this change also again relaxation go back.
Summary of the invention
Under this background, that utilizes that the present invention gives chapter and verse independent claims carrys out the method for measurement gas parameter by means of gas sensing fet, the opertaing device of use the method for the independent claims arranged side by side of also giving chapter and verse, and the corresponding computer program of the independent claims arranged side by side of finally giving chapter and verse.From corresponding dependent claims and below description draw favourable expansion scheme.
The invention provides a kind of method by means of gas sensing fet measurement gas parameter, wherein the method has following steps:
-apply preparation voltage to during setup time section the grid of field effect transistor;
-detection time after setup time section immediately checkout area effect transistor during section source connection terminal and the measurement parameter between drain connection terminal, wherein during detection measurement parameter, detection voltage is applied on grid, described detection voltage has a level value, and the numerical value of this level value is especially less than the absolute value of preparing voltage; And
-in the situation that use the measurement parameter detecting to determine gas parameter.
The present invention also provides a kind of opertaing device, and it is constructed in corresponding device, carry out, control or implement the step of the method according to this invention.By the enforcement flexible program with opertaing device form of the present invention, can be fast and effectively solve the present invention based on task.
At this, opertaing device can be understood as to a kind of electrical equipment, this electrical equipment processes sensor signal and according to this sensor signal output control signal and/or data-signal.This opertaing device can have interface, and described interface can be constructed based on hardware and/or software.In hardware based structure, described interface can be for example a part of the system ASIC of the so-called various functions that comprise opertaing device.But also possibly, described interface is own integrated circuit or discrete device, consists of at least in part.In the structure based on software, described interface can be especially for example except other software module, to be also present in the software module on microcontroller.
Favourable also have a kind of computer program with program code, this program code can be stored in machine-readable carrier, such as on semiconductor memory, harddisk memory or optical memory, and this program code is used to carry out or control according to the step of the method one of aforementioned embodiments Suo Shu when this program product is carried out on computing machine, device or opertaing device.
For example gas parameter can be understood as to concentration or the type of the predetermined gas being formed by gaseous mixture or fluid.Grid can be understood as the electrode of the grid of field effect transistor, described electrode is realized holding or storing of the gas that consists of gaseous mixture or fluid, and electrical characteristics or the capacitance characteristic change of grid thus.In this way, for example can be in the situation that gas with various type or the gas concentration contacting with grid or gate electrode causes source connection terminal to the difference electricity behavior of the field effect transistor between drain connection terminal or resistance.Can be understood as following voltage by preparing voltage: described voltage is applied on grid during specific incubation period, to make the raceway groove of field effect transistor or field effect transistor, is that ensuing measurement is ready.For example can be understood as resistance or the electric current occurring between the transistorized source connection terminal of being on the scene effect and drain connection terminal by measuring parameter.At this, during the step detecting, on grid, apply detection voltage, described detection voltage has the little level value of absolute value that numeric ratio detects voltage.At this, level value can be understood as to the occurrence of voltage.The absolute value that detects voltage or preparation voltage can be understood as to the numerical value that detects voltage or prepare voltage.
The present invention based on understanding be accurately before measurement gas parameter, should make field effect transistor for measuring, be ready to as well as possible.To the described preparation of field effect transistor, can be undertaken by applying preparation voltage to the grid of field effect transistor, described preparation voltage itself has the larger absolute value of numerical value than the detection voltage using in step below, so that actual, detect and measures parameter.At this, can guarantee by using than the preparation voltage that detects voltage and have obviously larger plus or minus magnitude of voltage: for example for the semiconductor material of the channel region of field effect transistor can in and interference position.This for example can carry out in the following way: by (comparing high with detection voltage) preparation voltage, cause the removable charge carrier in channel region to move or move away from grid towards grid.Pass through which, the channel region that can make field effect transistor or field effect transistor is that point-device ensuing measurement is ready to, wherein can compensate as well as possible in described channel region will the uncertain electro ultrafiltration of performance when measuring impurity or disturbing effect.Then, in order next to measure measuring parameter, can in section, utilize the lower detection voltage at grid place to carry out the measurement of measuring parameter in back to back detection time.Therefore, the channel region of field effect transistor has still favourable measurement characteristics in this time period immediately applying after preparing voltage, and described measurement characteristics still keeps surpassing the regular period after cancelling preparation voltage.
The advantage that the present invention has is, by applying to grid, prepares voltage field effect transistor is ready to, can realize with prior art in institute can compare the obviously better detection of measuring parameter.Also become likely thus, obviously detect more accurately gas parameter, wherein only need to change the control of the connection terminal of field effect transistor or apply with respect to prior art.Can utilize thus technical very simple means in the situation that using gas sensing fet, to realize detection and the obvious improvement of the measurement of gas parameter thus of measuring parameter.
According to an embodiment of the invention, can in definite step, only use in the situation that the measurement parameter detecting in detecting step is determined gas parameter.Such embodiment of the present invention is guaranteed: described measurement parameter only is just considered for determining gas parameter when (comparing less with absolute preparation voltage) detection voltage is applied on the grid of field effect transistor.In this way, avoid interference impact when determining gas parameter, described disturbing effect is for example due to the overtension on grid and moves field effect transistor outside the transistorized working point of being on the scene effect thus and cause.
According to another embodiment of the present invention, also can be in applying step to grid, apply and the preparation voltage that detects voltage and have distinct symbols, or wherein in applying step, to grid, apply and the preparation voltage that detects voltage and have same-sign.At this, for example also can in first applies step, use the preparation voltage with the first symbol, and use the preparation voltage with the second symbol contrary with the first symbol ensuing in applying step.The advantage that such embodiment of the present invention provides is that field effect transistor or its electrical characteristics can be " reset " and therefore also can in compared with long running duration, again be placed in very simply technically initial state.Also can optimize this measurement for the different application environment for measurement gas parameter.
Particularly advantageously an embodiment of the invention, wherein the step of the method repeats at least one times.This embodiment of the present invention based on situation be to prepare after certain duration, again mobile carrier relaxation to be got back to original position after voltage cancelling.Of the present invention, have repeatedly but such embodiment of repeating said steps provides at least one times advantage is, can when measure measuring parameter, surpass the long term again cancel that the drift of removable charge carrier from the channel region of field effect transistor goes out and therefore also in the long term, realize measuring point-device measurement of parameter, and therefore this guaranteed also to surpass this long term and very accurately determined gas parameter.
Particularly advantageously one embodiment of the present of invention, the step that applies of wherein in succession carrying out is each other performed as the setup time section that makes to apply in step and differs from one another, and/or the detecting step of in succession carrying out is each other performed as section detection time making in detecting step and differs from one another.For example, first setup time section can be greater than ensuing second setup time section, or first detection time section can be greater than ensuing second detection time section.Alternately or additionally, first setup time section also can be less than back to back first detection time section and/or immediately following after the first detection time section second setup time section be less than immediately after the second setup time section second detection time section.In this way, can be very neatly the preparation of field effect transistor and respective environment scene (for example field effect transistor being exposed in specific gaseous environment or at specific temperature) or the parameters (for example semiconductor parameter of field effect transistor) of field effect transistor be matched, wherein field effect transistor is used in such environment scene and causes field effect transistor in the differential responses of run duration.
The preparation detecting next measuring parameter of mating especially in order to realize the ruuning situation current with the difference of field effect transistor also can also be carried out the step of determining state value after detecting step.At this, this state value represents the source connection terminal of field effect transistor and the physical state in the channel region between drain connection terminal.Meanwhile, can, in applying step, to grid, apply the preparation voltage that depends on this state value.For example such state value can be interpreted as to the electric charge in the concentration of interference position or the channel region of field effect transistor.The advantage that such embodiment of the present invention provides is can very accurately regulate and prepare voltage to be to be ready to measuring the detection of parameter subsequently by the optimum state of the channel region of field effect transistor (especially in view of possible disturbing effect).
According to another embodiment of the present invention, can in applying step, between source connection terminal and drain connection terminal, apply the test voltage of rising, then be the test voltage that applies decline, and measure the change curve of the electric current between source connection terminal and drain connection terminal.At this, the voltage that can apply between source connection terminal and drain connection terminal in detecting step depends at least one value from the measured change curve of electric current.At this, such test voltage can be understood as to sequence or the change curve of voltage, described voltage is applied on grid and can passes through the optimal working point of field effect transistor measurement gas parameter for determining.The advantage that this embodiment of the present invention provides is can during detecting measurement parameter, realize the optimal working point of voltage-regulation by the rising of test voltage and the change curve of decline.Can immediately before detecting practically for the measurement parameter of definite gas parameter, determine working point by such manner, in current use scenes, this field effect transistor starts to have its maximum sensitivity from this working point.This causes again the high precision of gas parameter to be determined.
Particularly advantageously an embodiment of the invention, wherein when test voltage rises when the change curve value of the electric current of the test voltage value for given in advance with when test voltage declines, for the numerical value of the difference of the value of the curent change curve of test voltage value given in advance, during over predefined threshold value, in detecting step, the voltage being applied between source connection terminal and drain connection terminal is changed over to second voltage value from the first magnitude of voltage.The advantage that this embodiment of the present invention provides is, for example in detecting step, to grid, apply predefined detection magnitude of voltage, this detection magnitude of voltage only just changes when the hysteresis curve of the electric current through the raceway groove of field effect transistor has the too great deviations of current segment characteristic curve when test voltage rises or decline according to test voltage.Such too great deviations of current segment characteristic curve can be inferred, during utilizing the detection voltage used up to now to detect measurement parameter, in the channel region of checkout area effect transistor, may there is charge reversal process, make to match with the detection of measuring parameter detecting voltage for fear of such charge reversal process need.
Accompanying drawing explanation
Then exemplarily further set forth with reference to the accompanying drawings the present invention.
Fig. 1 shows the block diagram of the opertaing device by means of gas sensing fet measurement gas parameter according to an embodiment of the invention;
Fig. 2 shows according to the figure of the change in voltage curve on the grid that is applied to field effect transistor of an embodiment as method of the present invention;
Fig. 3 shows according to the figure of another change in voltage curve on the grid that is applied to field effect transistor of another embodiment as method of the present invention;
Fig. 4 shows according to the figure of another change in voltage curve on the grid that is applied to field effect transistor of another embodiment as method of the present invention;
Fig. 5 shows for the state change figure of the step of the embodiment as method of the present invention is shown; And
Fig. 6 A and 6B show according to an embodiment of the invention for setting forth the figure that is identified for detecting the optimal working point of measuring parameter.
Embodiment
Below in the description of the preferred embodiments of the present invention, for shown in different accompanying drawings and act on similar element and use same or analogous Reference numeral, wherein abandon being repeated in this description these elements.
Fig. 1 shows the principle of the gas sensing fet 100 that can be controlled by opertaing device 110 and arranges.This field effect transistor has air-sensitive grid 115, at these air-sensitive grid 115 places, can store or invade the gas composition 120 from gas or fluid mixture 125, the gas parameter that wherein will determine from this gas composition 120 by means of field effect transistor 100.Grid 120 is the channel region 135 by field effect transistor 110 by (air-sensitive) separation layer 130, and this channel region 135 is connected source connection terminal area 140 with the drain connection terminal area 145 of field effect transistor 100.
Important background of the present invention is and then for constant sensor baseline this purpose, electric drift to be minimized after connecting transistor.The transistor with the interference position density of the raising in channel region 135 shows stronger drift behavior, at its run duration, changes operating point.By this, change, can not infer again actual measurement point, or because unpredictalbe change of working point draws other shortcomings.The possibility providing in the scheme of this proposition is to prevent the voltage drift in device.
The position of the moving iron in oxygen changes field or the characteristic that also can change in channel region, and therefore causes the change of working point.This effect also can be passed through proposed the present invention and improve.
In order to use chemically sensitive gas sensor, need operation strategy, to make the minimise stress on device.Scheme in this proposition provides adjusting parameter, utilizes described adjusting parameter and to match to applying of device (being field effect transistor) described strategy.
An importance of the present invention is dynamic operation, and gas sensitive device is not by constant voltage but moves with the operation strategy of definition.By utilizing the constant bias stress on (field effect) transistor, the defined state of the distribution saturated and moving iron thus of the realization that can be in operation (especially in channel region) interference position and thus constant operating point.At this, this device is in the operation of constant working point, but also in the situation that working voltage (prepare voltage and detect voltage) changes, in stress point or stress time section or setup time section, moves.In the scheme of this proposition, therefore utilize the effect of constant bias stress and realize constant state (especially at the channel region 135 for measurement parameter) to be in operation.
Next by the situation that further describe the working method in the principle of the scheme of this proposition with reference to the figure of figure 2.Reference in the figure, (on horizontal ordinate) t has not drawn the change curve that is applied to the voltage on grid 115 on ordinate in the same time.Connecting transistor 100(at connection moment t
1start initialization for determining the method for gas parameter) after, load prestress to before actual measurement or controlling run this transistor 100, at moment t
2with t
3between setup time section t
23in apply preparation voltage U to grid 115
vS.Possible " stress " (is for example the operating voltage U in ensuing detection time of section far beyond actual working point
eS) to grid, apply high grid voltage U
g, and do not apply drain voltage (being the voltage between source connection terminal and drain connection terminal).Although will there is no the flow through channel region of transistor 100(of electric current), this High-Field will be moved to electronics in grid and cause the saturated of oxygen abort situation.At setup time section t
23moment t during end
3, apply detection voltage U to grid 115
eS, and at section t detection time
34during this time, detect and measure parameter 165 to moment t
4, at this, be for example the electric current of process channel region 135 after applying voltage between 140Yu drain region, source region 145.Therefore by recognizing the effect of the electrical characteristics of 120 pairs of grids 115 of gas component or separation layer 130, can in unit 170, from gas parameter 175, determine and measure parameter 165.
This stress of transistor 100 (applies preparation voltage U to grid 115
vS) also can repeat at run duration, to again reset drift during working time.For this reason, for example can be at moment t
4after (being the finish time of section detection time), again carry out at (now shorter) setup time section t
45apply preparation voltage U to during this time grid 115
vSuntil moment t
5step because transistor 100 in first applies step in time period t
23in be ready, make only need to refresh now the expectation state of the semiconductor material in channel region 135.After this, can be then in another detecting step second detection time section t
56in again detect to measure parameter until t constantly
6, wherein from described measurement parameter, can again determine gas parameter 175 equally.By which, can be by preparing the transistorized repetition period, then detecting and measure parameter during long arbitrarily period, high-precision measurement or the detection that can measure parameter then can be determined gas parameter from described measurement parameter.
Alternately or in Another Application environment, for example, also can in the described one or more steps that apply, use and detect voltage U
eSthe preparation voltage U with distinct symbols
vS.Thus for example can be otherwise or with reference to the neutralisation of the effect of other interference position or other moving irons, optimize the channel region 135 of transistor 100, just look like that this can realize like that by using with the preparation voltage that detects voltage same-sign.At this, one or more setup time section can with selecting the similar or identical length of one or more preparation voltages when detecting the identical preparation voltage of voltage sign.But should guarantee: the absolute value of preparing voltage is always greater than the value that detects voltage, because can guarantee in this way: the interference electrical characteristics of the semiconductor material of channel region 135 are compensated by applying grid 115.Fig. 3 shows grid voltage U
gthe principle figure of time changing curve, wherein using and the preparation voltage U that detects voltage U ES and have distinct symbols
vSsituation get off and apply this grid voltage U to grid 115
g.
In other words, another possibility is, to transistor, applies negative stress, this negative stress by transistor 100 degree of depth be driven in accumulation.In the running status of accumulation, transistor 100 not conductings, but in raceway groove 135, exist and compare contrary charge carrier with Reversion.But described charge carrier also can cause the saturated of oxygen charge carrier.According to the interference position in oxygen, have more acceptor property or for body characteristics, can change different stress mechanisms.This situation of using the processing mode in negative bias (preparation voltage) situation that there is shown at Fig. 3.Stress field at high temperature can cause the displacement of the definition of the moving iron in oxygen equally.Can say by stress application voltage, device is just aging in advance before actual motion.
In addition, also can be for example in detecting step (in time period t
23during this time) measure or detect measurement parameter and measure 400 drift or interference position concentration later, this is exemplarily illustrated in the figure of Fig. 4.At this, according to the diagram of Fig. 3, use and detect voltage U
eSthe preparation voltage U with distinct symbols
vS.The result of this measurement then can be for determining that the grid 115 of giving that will carry out in following step applies preparation voltage, for example makes to be chosen as the effect to the drift behavior in this channel region 135 or interference position concentration of the semiconductor material that makes in can territory, compensated channel region 135 by preparing voltage.In this way, relaxation in the time of can identifying clearly the voltage drop of interference position concentration on being applied to grid 115 in detecting step, and can again according to current state, semiconductor material be brought into as quickly as possible again to the state of measuring parameter optimum for detecting.Measuring 400 drift/interference position concentration for example can be by voltage U
gbe applied on grid 115 this voltage U
gaccording to absolute value ratio, prepare voltage U
vShigher (and have and prepare voltage U
vSdifferent symbols).Can identify thus impact and measure the current interference position concentration of the drift of parameter.Then in response to measured drift or interference position concentration, can be at the second setup time section t in (second) applies step
45select during this time to prepare voltage, but this is current not shown in Fig. 4, because in this use and at the first setup time section t
23in first apply during identical preparation voltage U
vSvalue.This is represented by Reference numeral 410 in Fig. 4.
Fig. 5 shows according to of the present invention for carry out the principle process flow diagram of embodiment of the method 500 of measurement gas parameter by means of gas sensing fet 100.For the embodiment of method 500 is shown, according to the processing mode shown in Fig. 4, use applying grid 115 for this reason.At this, in first step, start 510 method 500(for example at the moment of Fig. 1 t
1).In following step, carry out following steps: at setup time section t
23apply 520 preparation voltage U to during this time the grid of field effect transistor 100
vS(this applies step 520 and also can be called as to transistor and apply " prestress ").Then, in detecting step 520 detection time after setup time section immediately checkout area effect transistor during section source connection terminal and the measurement parameter between drain connection terminal, wherein during detecting measurement parameter, detection voltage is applied on grid, the absolute value that this detection voltage ratio is prepared voltage has less level value.In this step, field effect transistor is in the lower work of known operational mode (also claiming operation).If detect to measure now parameter in this detecting step 530, can be in ensuing determining step 535 using (from measuring parameter) measure parameter in the situation that to determine gas parameter.In another following step, measure the drift of 540 measurement parameters as state value 547, described measurement parameter especially represents the indication to the physical state of the semiconductor material in channel region 135.This measuring process 540 also can be understood as that another ensuing part that applies step 545.After measuring process 540, can in calculation procedure 540, calculate (new) preparation voltage U
vS1, this prepares voltage U
vS1for the ensuing step 520 that applies.Applying to grid 115, calculate the preparation voltage U of (may be changed)
vS1after, now detect again and measure the step 530 of parameter and the step 535 of determining gas parameter from measure parameter.
Therefore, scheme described here has realized a kind of processing mode, wherein in the situation that (or afterwards) during operation (state) applies to grid 115 to prepare voltage, is again switched under stress mode and the drift of antagonism working point in short-term.
In addition, can be in order to adjust as far as possible the preparation voltage of coordinating with concrete applicable cases maybe this preparation voltage before calculating after more accurately controlling.In such scheme, there is another possibility, for example by means of other measuring methods, measure the drift producing, and calculate the stress signal that is applied to this drift from measured interference position.For this reason, for example can use known charge pumping method (Charge-Pumping-Verfahren) from semiconductor fabrication (may to change form).The charge pumping method method of its derivation (or from) therefore also can be for determining the starting point of the accumulation field effect transistor 100.But different from charge pumping method, this measuring method does not need the 4th connection terminal at transistor 100 places.
Use such scheme to make it possible to measure bandlet voltage at run duration, wherein this transistor can be controlled in accumulation by degree of depth earth pulse formula.This for example, is undertaken by temporarily applying negative voltage (in the transistorized situation of N-shaped).At this, if reach bandlet voltage, interference position is by charge reversal.Bandlet voltage should be understood as to the voltage applying from outside, this voltage induces minimum electric field in semiconductor.If then measure transistorized transfer curve 600(be illustrated on grid 115, execute in alive situation the characteristic curve of the electric current between source connection terminal 140 and drain connection terminal 145 with reference to drain connection terminal 145), can determine: whether interference position by charge reversal.Such transmission feature curve 600 of field effect transistor 100 has been shown in Fig. 6 A and 6B, wherein in order to determine transmission feature curve 600, first the voltage level of rising is applied on grid 115, to obtain first (rising) branch 610 of transmission feature curve 600, and then the voltage level of decline is applied on grid 115, to obtain second (decline) branch 620 of transmission feature curve 600.At this, the transmission feature curve 600 for the situation lower than bandlet voltage has been shown in Fig. 6 A, and in Fig. 6 B, has illustrated for the transmission feature curve that is not less than the situation of bandlet voltage.At this, the gradient of transmission feature curve 600 changes according to the voltage being applied on grid 115, the same hysteresis that forms the transmission feature curve of measuring between rising (branch 610) and decline (branch 620).At this, transmission feature curve 600 has been shown in Fig. 6 A, wherein the value of the electric current between source connection terminal 140 and drain connection terminal 145 in grid voltage rising situation exists between the value in grid voltage decline situation (respectively with reference to identical gate voltage values 640) with this electric current and large differs from 630, and this can infer the charge reversal of the interference position in the semiconductor material of channel region 135.Contrary only existence in the transmission feature curve 600 of Fig. 6 B in (equally respectively with reference to the identical grid voltage 640) situation that rises or decline at grid voltage through the little of the electric current of channel region differs from 630.Which by such scheme in this introduction, can determine: under the voltage at grid place, the charge reversal effect of the interference position in the semiconductor material in channel region no longer occurs, making no longer to expect when this voltage has measuring the disturbing effect of the detection of parameter.Therefore by which voltage to start to make this test of the effect neutralisation of interference position from, can determine working point or determine specifically and will or measure scene for measuring the detection voltage of parameter for current application scene, this detection voltage will be applied on grid during detection period.For example, to the analysis of this transmission feature curve 600, also can carry out to such an extent that the value on the transmission feature curve 610 that makes to rise surpasses threshold value with respect to the difference of the value on the transmission feature curve 620 declining, measure the drift of parameter excessive and therefore no longer can be tolerated.In this case, then can mate or change for detection of detection voltage, for example improve or reduce and detect voltage.By testing a plurality of negative voltages, can determine: when relevant voltage, whether surpass bandlet.In the situation that surpassing bandlet voltage, transmission curve moves specific voltage range.
The present invention can be for allly having the sensor of the based semiconductor of the device based on field effect, especially for the gas sensor with transistorized based semiconductor.
Described and in the accompanying drawings shown in embodiment only by exemplary selection.Different embodiment can be completely or with reference to each feature combination with one another.Also can supplement an embodiment by the feature of another embodiment.
In addition, steps of a method in accordance with the invention can repeat or carry out with the order different from described order.
If an embodiment comprises the "and/or" conjunction between First Characteristic and Second Characteristic, this refers to, this embodiment has First Characteristic and Second Characteristic according to an embodiment, and only has First Characteristic or only have Second Characteristic according to another embodiment.
Claims (10)
1. by means of the method (500) of gas sensing fet (100) measurement gas parameter (175), wherein the method (500) has following steps:
-at setup time section (t
23) during apply (520,545) to the grid (115) of field effect transistor (100) to prepare voltage (U
vS);
-immediately at setup time section (t
23) section (t detection time afterwards
34) during detect the source connection terminal (140) and the measurement parameter (165) between drain connection terminal (145) of (530) field effect transistor (100), wherein during detection (520) measurement parameter (165), will detect voltage (U
eS) being applied to grid (115) above, described detection voltage has a level value; And
-in the situation that use the measurement parameter (165) detecting to determine (535) gas parameter (175).
2. method according to claim 1 (500), is characterized in that, determines the gas parameter (175) only detecting in detecting the step of (530) in the step of determining (535) in the situation that using measurement parameter (165).
3. according to the method one of aforementioned claim Suo Shu (500), it is characterized in that, apply and detect voltage (U in the step that applies (520,545) grid (115)
eS) there is the preparation voltage (U of distinct symbols
vS), or apply and detect voltage (U wherein in the step that applies (520,545), to grid (115)
eS) there is the preparation voltage (U of same-sign
vS).
4. according to the method one of aforementioned claim Suo Shu (500), it is characterized in that, the step of the method (500) repeats at least one times.
5. method according to claim 4 (500), it is characterized in that, that in succession carries out each other applies (520,545) step is performed as and makes to apply (520,545) the preparation voltage (UVS) in step differs from one another, and/or the step that applies (530) of in succession carrying out is each other performed as section (t detection time in the step that makes detection (530)
34, t
56) differ from one another.
6. according to the method one of aforementioned claim Suo Shu (500), it is characterized in that, in the step that detects (530), also carry out and determine (540 later, 550) step of state value (555), wherein this state value (547) represents the source connection terminal (140) of field effect transistor (110) and the physical state in the channel region (135) between drain connection terminal (145), applies the preparation voltage (U that depends on this state value (547) wherein in the step that applies (520), to grid (115)
vS1).
7. according to the method one of aforementioned claim Suo Shu (500), it is characterized in that, in the step that applies (520), between source connection terminal (140) and drain connection terminal (145), apply the test voltage (U) of rising, then apply the test voltage (U) of decline, and measure the change curve (600) of the electric current (I) between source connection terminal (140) and drain connection terminal (145), the voltage wherein applying between source connection terminal (140) and drain connection terminal (145) in detecting the step of (520) depends at least one value from the measured change curve (600) of electric current (I).
8. method according to claim 7 (500), it is characterized in that, when when test voltage rises for the value of the change curve (600) of the electric current (I) of test voltage value (640) given in advance with when test voltage declines for the numerical value of poor (630) of the value of the change curve (600) of the electric current (I) of test voltage value (640) given in advance during over predefined threshold value, in the step that detects (530), the voltage being applied between source connection terminal (140) and drain connection terminal (145) is changed over to second voltage value from the first magnitude of voltage.
9. opertaing device (100), it is constructed in corresponding unit carry out or control according to the step of the method for one of claim 1 to 8 (500) in (150,160,170).
10. the computer program with program code, described program code is carried out according to the method one of claim 1 to 8 Suo Shu (500) when this program product is carried out in opertaing device (110) is upper.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102012213429.8 | 2012-07-31 | ||
| DE102012213429.8A DE102012213429A1 (en) | 2012-07-31 | 2012-07-31 | Method and control device for measuring a gas parameter using a gas-sensitive field-effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103575775A true CN103575775A (en) | 2014-02-12 |
| CN103575775B CN103575775B (en) | 2018-08-17 |
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| KR102249665B1 (en) * | 2019-05-10 | 2021-05-10 | 한양대학교 산학협력단 | Gas sensing ability enhancing apparatus using the bias and method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20100193375A1 (en) * | 2007-06-25 | 2010-08-05 | Dirk Liemersdorf | Semiconductor gas sensor having additional functionalities of the signal-generating electrode |
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| US4698657A (en) * | 1984-02-10 | 1987-10-06 | Sharp Kabushiki Kaisha | FET type sensor and a method for driving the same |
| JPH05312778A (en) * | 1992-05-14 | 1993-11-22 | Fuji Electric Co Ltd | Ion concentration sensor |
| CN101142476A (en) * | 2005-03-18 | 2008-03-12 | 毫微-专卖股份有限公司 | Gated gas sensor |
| CN101573612B (en) * | 2007-01-04 | 2013-02-13 | 皇家飞利浦电子股份有限公司 | Method, detector and system for measuring a sample concentration |
| DE102007034331A1 (en) * | 2007-07-24 | 2009-01-29 | Robert Bosch Gmbh | Apparatus and method for detecting substances |
| DE102007039567A1 (en) | 2007-08-22 | 2009-02-26 | Robert Bosch Gmbh | gas sensor |
| DE102007040726A1 (en) * | 2007-08-29 | 2009-03-05 | Robert Bosch Gmbh | gas sensor |
| JP5235215B2 (en) * | 2008-07-10 | 2013-07-10 | 株式会社イデアルスター | Gas sensor |
| EP2362216A1 (en) * | 2010-02-27 | 2011-08-31 | Karlsruher Institut für Technologie | Carbon nanotube SB-FET hydrogen sensor and methods for its manufacture and operation |
| FR2969294A1 (en) * | 2010-12-17 | 2012-06-22 | Alcatel Lucent | METHOD FOR REGENERATING A HYDROGEN SENSOR |
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| US20100193375A1 (en) * | 2007-06-25 | 2010-08-05 | Dirk Liemersdorf | Semiconductor gas sensor having additional functionalities of the signal-generating electrode |
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| CN103575775B (en) | 2018-08-17 |
| JP2014032194A (en) | 2014-02-20 |
| DE102012213429A1 (en) | 2014-02-06 |
| JP6238622B2 (en) | 2017-11-29 |
| FR2994266B1 (en) | 2017-06-23 |
| FR2994266A1 (en) | 2014-02-07 |
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