CN103572229B - 一种在真空卷对卷镀膜用可挠性基材上制备薄膜的方法 - Google Patents
一种在真空卷对卷镀膜用可挠性基材上制备薄膜的方法 Download PDFInfo
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- CN103572229B CN103572229B CN201310539744.6A CN201310539744A CN103572229B CN 103572229 B CN103572229 B CN 103572229B CN 201310539744 A CN201310539744 A CN 201310539744A CN 103572229 B CN103572229 B CN 103572229B
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- 239000011248 coating agent Substances 0.000 title claims abstract description 29
- 238000000576 coating method Methods 0.000 title claims abstract description 29
- 239000010409 thin film Substances 0.000 title claims abstract description 26
- 239000000463 material Substances 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 claims abstract description 48
- IUZNJVILEJRNNP-UHFFFAOYSA-N magnesium;oxozinc Chemical compound [Mg].[Zn]=O IUZNJVILEJRNNP-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000013077 target material Substances 0.000 claims abstract description 29
- 239000010935 stainless steel Substances 0.000 claims abstract description 22
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 22
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims abstract description 19
- 238000010521 absorption reaction Methods 0.000 claims abstract description 19
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 19
- 239000011734 sodium Substances 0.000 claims abstract description 19
- QMXBEONRRWKBHZ-UHFFFAOYSA-N [Na][Mo] Chemical compound [Na][Mo] QMXBEONRRWKBHZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000001704 evaporation Methods 0.000 claims abstract description 14
- 238000004544 sputter deposition Methods 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 claims description 100
- 239000000843 powder Substances 0.000 claims description 100
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 84
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 65
- 239000007789 gas Substances 0.000 claims description 63
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 56
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 56
- 229910052786 argon Inorganic materials 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 42
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 34
- 239000011787 zinc oxide Substances 0.000 claims description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 30
- 239000008367 deionised water Substances 0.000 claims description 28
- 229910021641 deionized water Inorganic materials 0.000 claims description 28
- 229910003437 indium oxide Inorganic materials 0.000 claims description 28
- 239000000395 magnesium oxide Substances 0.000 claims description 28
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 28
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 28
- 238000005245 sintering Methods 0.000 claims description 22
- 238000005086 pumping Methods 0.000 claims description 21
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 20
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 18
- 229910052750 molybdenum Inorganic materials 0.000 claims description 18
- 239000011733 molybdenum Substances 0.000 claims description 18
- 238000007747 plating Methods 0.000 claims description 17
- 238000001035 drying Methods 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910002804 graphite Inorganic materials 0.000 claims description 8
- 239000010439 graphite Substances 0.000 claims description 8
- 238000007731 hot pressing Methods 0.000 claims description 8
- 239000004744 fabric Substances 0.000 claims description 7
- 238000000227 grinding Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- 239000012467 final product Substances 0.000 claims description 6
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract description 10
- 230000008020 evaporation Effects 0.000 abstract description 7
- 238000007654 immersion Methods 0.000 abstract description 7
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 abstract description 2
- 238000009792 diffusion process Methods 0.000 abstract description 2
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 abstract description 2
- 229910003363 ZnMgO Inorganic materials 0.000 abstract 1
- 229960001296 zinc oxide Drugs 0.000 description 23
- 238000006243 chemical reaction Methods 0.000 description 14
- 239000011669 selenium Substances 0.000 description 9
- 229910052711 selenium Inorganic materials 0.000 description 8
- 239000002243 precursor Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 210000001142 back Anatomy 0.000 description 2
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052951 chalcopyrite Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004663 powder metallurgy Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 239000003643 water by type Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000010748 Photoabsorption Effects 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 229910000928 Yellow copper Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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CN104087903A (zh) * | 2014-07-25 | 2014-10-08 | 安泰科技股份有限公司 | 钼钠管型靶材及其制造方法和钼钠靶材 |
CN108321216A (zh) * | 2018-01-30 | 2018-07-24 | 北京铂阳顶荣光伏科技有限公司 | 一种可调光学带隙的氧锌镁材料、制备方法及太阳能电池 |
CN110835724A (zh) * | 2018-08-16 | 2020-02-25 | 研创应用材料(赣州)股份有限公司 | 一种cigs下电极用铝合金复合靶材及cigs薄膜太阳能电池的制备方法 |
TWI731752B (zh) * | 2020-07-17 | 2021-06-21 | 弘光科技大學 | 摻雜鉬鈉的類鑽碳膜的製備方法 |
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JP2012117127A (ja) * | 2010-12-02 | 2012-06-21 | Sumitomo Heavy Ind Ltd | 成膜装置、成膜基板製造方法、および成膜基板 |
KR101371859B1 (ko) * | 2011-11-11 | 2014-03-10 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
CN102943241B (zh) * | 2012-11-23 | 2017-05-03 | 中国电子科技集团公司第十八研究所 | 卷对卷柔性pi衬底上制备掺钠吸收层的方法 |
CN103074583B (zh) * | 2013-01-25 | 2015-04-22 | 合肥工业大学 | 一种cigs薄膜电池的激光沉积制备工艺 |
CN103045925B (zh) * | 2013-01-29 | 2015-01-28 | 洛阳高新四丰电子材料有限公司 | 一种钼钠合金旋转溅射管形靶材的制备工艺 |
CN103205708B (zh) * | 2013-04-24 | 2015-07-01 | 研创应用材料(赣州)有限公司 | 一种制备新型导电氧化铟靶材及氧化铟薄膜的方法 |
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Address after: 341000 standard factory building, North Zone, Hongkong Industrial Park, Ganzhou Development Zone, Jiangxi, six Patentee after: YANCHUANG APPLIED MATERIALS (GANZHOU) Inc.,Ltd. Address before: 341000 standard factory building, North Zone, Hongkong Industrial Park, Ganzhou Development Zone, Jiangxi, six Patentee before: Yanchuang Applied Materials (Ganzhou) Co.,Ltd. |
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Effective date of registration: 20230508 Address after: No. 36 Zhixin Road, Chengdong Industrial Park, Daxu Town, Xiangshan County, Ningbo City, Zhejiang Province, 315708 Patentee after: Ningbo Rongbaoyu Semiconductor Co.,Ltd. Address before: 341000 building 6, standard workshop, North District, Hong Kong Industrial Park, 168 Xiangjiang Avenue, Ganzhou economic and Technological Development Zone, Ganzhou City, Jiangxi Province Patentee before: Ganzhou Chuangfa Photoelectric Technology Co.,Ltd. |
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Effective date of registration: 20240902 Address after: 341000 building 6, standard workshop, North District, Hong Kong Industrial Park, 168 Xiangjiang Avenue, Ganzhou economic and Technological Development Zone, Ganzhou City, Jiangxi Province Patentee after: Ganzhou Chuangfa Photoelectric Technology Co.,Ltd. Country or region after: China Address before: No. 36 Zhixin Road, Chengdong Industrial Park, Daxu Town, Xiangshan County, Ningbo City, Zhejiang Province, 315708 Patentee before: Ningbo Rongbaoyu Semiconductor Co.,Ltd. Country or region before: China |