CN103558539A - LED detection method - Google Patents

LED detection method Download PDF

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Publication number
CN103558539A
CN103558539A CN201310549139.7A CN201310549139A CN103558539A CN 103558539 A CN103558539 A CN 103558539A CN 201310549139 A CN201310549139 A CN 201310549139A CN 103558539 A CN103558539 A CN 103558539A
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China
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led
micro
detection method
sensor
cpu
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CN201310549139.7A
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Chinese (zh)
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韦胜国
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Individual
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Individual
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Priority to CN201310549139.7A priority Critical patent/CN103558539A/en
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Abstract

The invention relates to the technical field of LED fault detection, in particular to an LED detection method. The LED detection method includes the steps that (1) when pins of an LED are packaged, the LED forming a loop on a support is powered on through an electric clamp, (2) a processor judges whether the LED is in a short circuit or not by controlling the micro-current of the electric clamp and collecting LED magnetic induction signals collected by sensors, and (3) the position of the half-finished LED is located according to the received short circuit information, and the position information of the half-finished LED is displayed on a display screen. According to the LED detection method, the short circuit current, generated in the wire leading support in welded connection, of the light irradiating LED chip is measured, the function states of the LED chip and the electrical connecting condition of the chip and the wire leading support during and after a pressure welding process are detected, and the half-finished LED can be detected in the packaging process.

Description

The detection method of a kind of LED
Technical field
The present invention relates to LED fault detection technique field, is exactly the detection method of a kind of LED.
Background technology
Along with the development of LED technology and perfect, the advantages such as LED is little with its volume, response is fast, the life-span is long, reliability is high, low in energy consumption have been widely used in the fields such as indication, demonstration, general lighting, continuous expansion along with its range of application, improve the reliability and stability of LED product, reduce its production cost and become very important problem, so the quality testing in LED production run seems particularly important.
Finished product detection after at present the detection of LED mainly being concentrated on wafer inspection before encapsulation and encapsulation and completed.Existing LED detection method mainly contains contact measurement and the large class of non-contact detection two.Contact measurement method comprises conventional electrical measurement method, four probe method ..., Van der Pauw method, OBIC (opticalbeam induced current) method etc.Conventional electrical measurement method, can make LED luminous by Injection Current, or detects by the resistance of measuring between LED pin, can also detect pn junction parameter by diode current voltage relationship.Contact measurement method requires detector probe directly to contact with sample, and detection efficiency is low, and not only probe is lossy, probably in testing process, cause chip to pollute simultaneously, even scratch so that scrap, conventionally can only inspect chip by random samples, be not suitable for the online application of production in enormous quantities.Non-contact detection method comprises wireless probe card method, laser SQUID (superconducting quantum interference device (SQUID)) method etc.Wireless probe card method need to increase the detection that extra transmitter/receiver circuit is realized wafer function on wafer, and cost is high and efficiency is low.The Distribution of Magnetic Field that laser SQUID method produces by non-cpntact measurement photocurrent realizes the detection of pn knot, but because changes of magnetic field is extremely faint, must adopt superconducting quantum magnetometer (SQUID), and detecting instrument system forms very complicated, and expensive.Two class detection methods recited above are mainly used in LED epitaxial wafer, and chip and finished product detection are not also adapted at the method in encapsulation process, LED semi-manufacture being detected at present both at home and abroad.
Need a kind of LED non-contact detection method based on pn knot photovoltaic effect, in LED pinned encapsulation process, the short-circuit current producing in the down-lead bracket being welded to connect by measuring micro-electric current LED, detects in bond technology, the electrical connection situation of rear LED function state and chip and down-lead bracket.According to LED enclosure support structure, adopt mutual inductance principle to measure photoproduction short-circuit current, in detection, do not contact LED chip surface, in encapsulation process, just can carry out fast detecting to LED semi-manufacture.
Summary of the invention
Technical matters to be solved by this invention is the short-circuit current producing in the down-lead bracket being welded to connect by measuring irradiation LED chip, detect in bond technology, the electrical connection situation of rear LED chip functional status and chip and down-lead bracket, a kind of method that can detect LED semi-manufacture in encapsulation process is provided.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: the detection method of a kind of LED, described method comprises the steps:
Step 1:LED, when pin package, is pressed from both sides and is switched on to form loop LED on support by electricity;
Step 2: processor gathers LED magnetic strength signal by controlling the electricity micro-electric current of folder and collecting sensor, judges whether LED exists short circuit;
Step 3: according to the half-finished LED of the short circuit Information locating position of receiving, and the information position of semi-manufacture LED is shown to display screen.
On the basis of technique scheme, the present invention can also do following improvement.
Further, described processor comprises CPU, analog to digital conversion circuit, micro-current source, and wherein micro-current source output terminal is connected with analog to digital conversion circuit, and the output terminal of CPU is connected with analog to digital conversion circuit, micro-current source, display screen respectively.
Further, processor gathers LED magnetic strength signal by controlling the electricity micro-electric current of folder and collecting sensor, judges whether LED exists short circuit, and detailed step is as follows:
CPU in processor controls micro-electric current micro-current source on support through analog to digital conversion circuit;
When sensor collects the micro-electric current formed magnetic strength signal of LED chip, described magnetic strength signal is sent to CPU in processor;
CPU, according to the size of magnetic strength signal, judges whether to be less than standard value, if not, finishes current step, if so, performs step 3.
Further, described sensor does not read the upper any information of chip of LED, according to sensing station Information generation LED positional information, outputs to display screen.
Further, the sensor in step 2 is Magnetic Sensor, and described Magnetic Sensor is to be positioned under support on each LED chip.
The invention has the beneficial effects as follows: the short-circuit current producing in the down-lead bracket being welded to connect by the technical program, detect in bond technology, the electrical connection situation of rear LED chip functional status and chip and down-lead bracket, a kind of method that can detect LED semi-manufacture in encapsulation process is provided.
Accompanying drawing explanation
Fig. 1 is the detection method process flow diagram of LED of the present invention;
Fig. 2 is the detection principle framework figure of LED of the present invention.
Embodiment
Below in conjunction with accompanying drawing, principle of the present invention and feature are described, example, only for explaining the present invention, is not intended to limit scope of the present invention.
As shown in Figure 1, the detection method process flow diagram for LED of the present invention, comprises the steps:
Step 1:LED, when pin package, is pressed from both sides and is switched on to form loop LED on support by electricity;
In this example, the pin of LED is connected to a complete loop of other end formation of support on the support of workbench by sealing wire.Micro-electric current support on described electricity folder clips to and on whole support, forms a large micro-current return.
Step 2: processor gathers LED magnetic strength signal by controlling the electricity micro-electric current of folder and collecting sensor, judges whether LED exists short circuit;
Step 3: according to the half-finished LED of the short circuit Information locating position of receiving, and the information position of semi-manufacture LED is shown to display screen.
Shown in Fig. 2, be principle framework figure of the present invention, details are as follows:
Described processor comprises CPU, analog to digital conversion circuit, micro-current source, and wherein micro-current source output terminal is connected with analog to digital conversion circuit, and the output terminal of CPU is connected with analog to digital conversion circuit, micro-current source, display screen respectively.
Processor gathers LED magnetic strength signal by controlling the electricity micro-electric current of folder and collecting sensor, judges whether LED exists short circuit, and detailed step is as follows:
CPU in processor controls micro-electric current micro-current source on support through analog to digital conversion circuit;
When sensor collects the micro-electric current formed magnetic strength signal of LED, described magnetic strength signal is sent to CPU in processor;
CPU, according to the size of magnetic strength signal, judges whether to be less than standard value, if not, finishes current step, if so, performs step 3.
Described sensor does not read the upper any information of chip of LED, according to sensing station Information generation LED positional information, outputs to display screen.
Sensor in step 2 is Magnetic Sensor, and described Magnetic Sensor is to be positioned at each LED under support above, to be provided with like this impact between each magnetic strength of application and construction.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.

Claims (5)

1. a detection method of LED, is characterized in that, described method comprises the steps:
Step 1:LED, when pin package, is pressed from both sides and is switched on to form loop LED on support by electricity;
Step 2: processor gathers LED magnetic strength signal by controlling the electricity micro-electric current of folder and collecting sensor, judges whether LED exists short circuit;
Step 3: according to the half-finished LED of the short circuit Information locating position of receiving, and the information position of semi-manufacture LED is shown to display screen.
2. according to the detection method of a kind of LED described in claim 1, it is characterized in that, described processor comprises CPU, analog to digital conversion circuit, micro-current source, wherein micro-current source output terminal is connected with analog to digital conversion circuit, and the output terminal of CPU is connected with analog to digital conversion circuit, micro-current source, display screen respectively.
3. according to the detection method of a kind of LED described in claim 1, it is characterized in that, processor gathers LED magnetic strength signal by controlling the electricity micro-electric current of folder and collecting sensor, judges whether LED exists short circuit, and detailed step is as follows:
CPU in processor controls micro-electric current micro-current source on support through analog to digital conversion circuit;
When sensor collects the micro-electric current formed magnetic strength signal of LED, described magnetic strength signal is sent to CPU in processor;
CPU, according to the size of magnetic strength signal, judges whether to be less than standard value, if not, finishes current step, if so, performs step 3.
4. according to the detection method of a kind of LED described in claim 3, it is characterized in that, described sensor does not read the upper any information of LED, according to sensing station Information generation LED positional information, outputs to display screen.
5. according to the detection method of a kind of LED described in claim 1, it is characterized in that, the sensor in step 2 is Magnetic Sensor, and described Magnetic Sensor is to be positioned under support on each LED.
CN201310549139.7A 2013-11-07 2013-11-07 LED detection method Pending CN103558539A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310549139.7A CN103558539A (en) 2013-11-07 2013-11-07 LED detection method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310549139.7A CN103558539A (en) 2013-11-07 2013-11-07 LED detection method

Publications (1)

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CN103558539A true CN103558539A (en) 2014-02-05

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Application Number Title Priority Date Filing Date
CN201310549139.7A Pending CN103558539A (en) 2013-11-07 2013-11-07 LED detection method

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0694769A (en) * 1992-09-11 1994-04-08 Sharp Corp Inspection of short circuit of led module
CN101074980A (en) * 2007-06-27 2007-11-21 重庆大学 Method for inspecting LED chip
CN102455403A (en) * 2010-10-20 2012-05-16 肖海冬 Light emitting diode (LED) chip detecting device
KR20120123931A (en) * 2011-05-02 2012-11-12 에스피엘이디 주식회사 Electonic parts inspecting apparatus and method
CN103364707A (en) * 2013-08-05 2013-10-23 莆田学院 High-power LED (light-emitting diode) chip packaging quality detecting method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0694769A (en) * 1992-09-11 1994-04-08 Sharp Corp Inspection of short circuit of led module
CN101074980A (en) * 2007-06-27 2007-11-21 重庆大学 Method for inspecting LED chip
CN102455403A (en) * 2010-10-20 2012-05-16 肖海冬 Light emitting diode (LED) chip detecting device
KR20120123931A (en) * 2011-05-02 2012-11-12 에스피엘이디 주식회사 Electonic parts inspecting apparatus and method
CN103364707A (en) * 2013-08-05 2013-10-23 莆田学院 High-power LED (light-emitting diode) chip packaging quality detecting method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
张鑫等: "一种LED芯片在线非接触检测系统", 《传感技术学报》, vol. 21, no. 7, 31 July 2008 (2008-07-31) *
李恋: "LED非接触在线检测技术研究", 《万方数据学术论文》, 19 December 2012 (2012-12-19) *

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