CN102520452B - Inductance type metal detector - Google Patents
Inductance type metal detector Download PDFInfo
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- CN102520452B CN102520452B CN2011103747431A CN201110374743A CN102520452B CN 102520452 B CN102520452 B CN 102520452B CN 2011103747431 A CN2011103747431 A CN 2011103747431A CN 201110374743 A CN201110374743 A CN 201110374743A CN 102520452 B CN102520452 B CN 102520452B
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- 239000002184 metal Substances 0.000 title claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 39
- 238000001514 detection method Methods 0.000 claims abstract description 32
- 230000010355 oscillation Effects 0.000 claims abstract description 26
- 239000000523 sample Substances 0.000 claims abstract description 15
- 238000004804 winding Methods 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- 229910052732 germanium Inorganic materials 0.000 claims description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 12
- 239000003990 capacitor Substances 0.000 claims description 10
- 230000001939 inductive effect Effects 0.000 claims description 5
- 230000005622 photoelectricity Effects 0.000 claims description 4
- 230000003321 amplification Effects 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 235000015895 biscuits Nutrition 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- -1 gun Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003534 oscillatory effect Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention relates to an inductance type metal detector, which is composed of a 6V direct current power supply, a detection probe, a high-frequency oscillation circuit, a voltage-multiplying detection circuit, a direct current phase inversion amplifying circuit and a photoelectric indication circuit. The inductance type metal detector can solve relative simple metal detection problems and is used for overcoming defects or shortcomings of large metal detection instruments. The inductance type metal detector can solve daily detection problems of metal substances which are buried relatively shallow, including: detecting metal pipelines distributed in a wall in hidden mode and the like, and the inductance type metal detector can solves problems of complex operation, high price and the like commonly existing in the large metal detection instruments. The inductance type metal detector is simple in circuit and low in manufacture cost, and can be developed as a practical instrument.
Description
Technical field
The invention belongs to electronic technology field, relate to a kind of inductance type metal detector.
Background technology
The instrument that is used for specially surveying metal object is that kind is more, powerful large-scale metal detection equipment can be used for detecting 5m in interior human body, luggage, parcel, whether to keep the metals such as gun, dagger, and this class detection instrument is applicable to the public arenas such as airport, station, harbour, customs, public security, frontier defense luggage and articles or human body are fast and safely checked; Also be useful on survey hidden in wall electric wire, be embedded in underground water pipe or cable, even can be used in underground hunt for treasure or survey be imbedded in the underground metal object that deeply reaches 5 meters.Their common feature be powerful, detection range is far away, result of detection is accurate.But the realistic problems such as their ubiquity prices are high, be difficult to promote, universal.
For solving the detection problem of relatively simple metal object, be necessary to study that a kind of circuit structure is simple, dependable performance, routine use are convenient, make cheap inductance type metal detector, to make up the defect that exists of large-scale metal detection equipment.
Below describe the correlation technique content of this inductance type metal detector in manufacturing process in detail.
Summary of the invention
Goal of the invention and beneficial effect: the present invention can solve relatively simple metal detection problem, for solving and make up defect or the deficiency that large-scale metal detection equipment exists.The present invention can solve daily run into bury relatively shallow metal object detection problem as: detect the metal pipe line of dark row in wall etc., make up large-scale metal detection equipment ubiquity complicated operation, the problem such as expensive.Because the circuit of inductance type metal detector is fairly simple, cost of manufacture is lower, be suitable as a kind of utility and develop.
Circuit working principle: when the detection probe (higher-order of oscillation transformer B) of inductance type metal detector during not near metal object, higher-order of oscillation transformer B normal operation, oscillator signal is after germanium diode D1, the detection of D2 multiplication of voltage, obtain DC voltage and make silicon transistor BG2 conducting, drive emitting red light diode LED luminous.When the close metal object of detection probe, because eddy current loss makes detection probe (higher-order of oscillation transformer B) failure of oscillation, make silicon transistor BG2 cut-off, emitting red light diode LED extinguishes because of dead electricity.
Technical characterictic: inductance type metal detector, by 6V direct supply, detection probe and high-frequency oscillating circuits, multiplication of voltage detecting circuit, DC phase transferring amplifying circuit and photoelectricity indicating circuit, formed, it is characterized in that:
detection probe and high-frequency oscillating circuits: by higher-order of oscillation transformer B, oscillating capacitance C3, silicon transistor BG1, potentiometer W1, biasing resistor R1 and shunt capacitance C1, negative feedback resistor R2 and negative feedback capacitor C 2 form, the collector of one termination silicon transistor BG1 of the III winding (primary coil) of higher-order of oscillation transformer B, the end of oscillating capacitance C3, the other end and the 6V DC power anode VCC of another termination oscillating capacitance C3 of the III winding of higher-order of oscillation transformer B, the base stage of silicon transistor BG1 connects an end of the II winding (secondary coil) of higher-order of oscillation transformer B, an end and the lever arm thereof of another termination potentiometer W1 of the II winding of higher-order of oscillation transformer B, the end of biasing resistor R1 and the end of shunt capacitance C1, another termination 6V DC power anode VCC of potentiometer W1, the other end connection circuit ground GND of the biasing resistor R1 other end and shunt capacitance C1, the emitter of silicon transistor BG1 connects the end of negative feedback resistor R2 and an end of negative feedback capacitor C 2, the other end connection circuit ground GND of the other end of negative feedback resistor R2 and negative feedback capacitor C 2,
Multiplication of voltage detecting circuit: formed by two germanium diode D1, D2 and filter capacitor C4, the negative pole of one termination germanium diode D1 of the I winding (inductive coil) of higher-order of oscillation transformer B and the positive pole of germanium diode D2, the other end connection circuit ground GND of the I winding of higher-order of oscillation transformer B, the anodal connection circuit ground GND of germanium diode D1, germanium diode D2 negative pole connects the positive pole of filter capacitor C4, the negative pole connection circuit ground GND of filter capacitor C4;
Direct current amplifies phase inverter and photoelectricity indicating circuit: silicon transistor BG2, build-out resistor R3, dropping resistor R4 and emitting red light two utmost point LED, consist of, the base stage of silicon transistor BG2 connects the end of build-out resistor R3, the other end connection circuit ground GND of the emitter of silicon transistor BG2 and build-out resistor R3, the collector of silicon transistor BG2 connects the negative pole of emitting red light two utmost point LED, the positive pole of emitting red light two utmost point LED connects the end of dropping resistor R4, another termination 6V DC power anode VCC of dropping resistor R4.
The accompanying drawing explanation
Accompanying drawing 1 is the circuit working schematic diagram of inductance type metal detector; Detection probe is that its I winding is inductive coil with high frequency magnetic core higher-order of oscillation transformer, and the II winding is secondary coil, and the III winding is elementary oscillator coil.
Embodiment
Technical requirement according to circuit working schematic diagram shown in accompanying drawing 1 and accompanying drawing explanation and the following stated is implemented, and can realize the present invention.
Components and parts are selected:
1. the making of detection probe: higher-order of oscillation transformer B is on ￠ 5mm, high 4mm " work " font high frequency magnetic core, with the enameled wire coiling of ￠ 0.12mm; The number of turn of 3 windings is respectively: the number of turn of I winding is 25T, and the number of turn of II winding is 11T, and the number of turn of III winding is 60T; The order of coiling is first around the III winding, then around the II winding, finally around the I winding, after coiling completes with the cured envelope of soaking of high frequency;
2. in order to improve the sensitivity of detection probe induction metal object, can not be fastening with metal objects when higher-order of oscillation transformer B is installed, and the shell of device is cut and can not be used metal material;
3. components and parts title and important technological parameters.
| Element number | The components and parts title | Major parameter | Quantity | Remarks |
| BG1 | 2SC9013 | NPN type, TO-92 plastic packaging | 1 | 3DG6 |
| BG2 | 2SC9013 | NPN type, TO-92 plastic packaging | 1 | 3DG6 |
| B | High-frequency transformer (detection probe) | 5mm * 4mm magnetic core | 1 | 3 windings |
| D1、D2 | Germanium diode | 2AP9 or select 1N60 | 2 | High-frequency diode |
| LED | Red light emitting diodes | ￠5、LED | 1 | Light emitting diode |
| C1 | Electric capacity | 0.1μF/63V | 1 | |
| C2 | Electric capacity | 0.083μF/63V | 1 | |
| C3 | Electric capacity | 5600P | 1 | |
| C4 | Electrochemical capacitor | 2.2μF/16V | 1 | Vertical |
| R1 | Resistance | 12KΩ | 1 | |
| R2 | Resistance | 5.1KΩ | 1 | |
| R3 | Resistance | 68KΩ | 1 | Biasing resistor |
| R4 | Resistance | 360Ω | 1 | Dropping resistor |
| W1 | Potentiometer | 430KΩ | 1 | Half variable fine setting |
| DC | Direct supply | The 6V electric battery | 1 group | Or laminated cell |
Circuit debugging: the circuit working schematic diagram of accompanying drawing 1 to specifications, all welding correctness and the welding quality of components and parts in check circuit, can connect the 6V direct supply after errorless on inspection and debug;
If not starting of oscillation of higher-order of oscillation transformer B, can get final product two joint transposings of I winding coil or II winding coil; If the oscillation intensity of high frequency oscillator is inadequate after adjusting, show as reliable not that while metal object being detected, silicon transistor BG2 ends, the number of turns of the I winding (inductive coil) of higher-order of oscillation transformer B suitably can be increased to 3～5T so;
After connecting the 6V direct supply, regulator potentiometer W1, collector, emitter with multimeter monitoring silicon transistor BG2, make silicon transistor BG2 conducting just, at this moment high frequency oscillator B is in weak oscillatory regime, near detection probe, silicon transistor BG2 should transfer cut-off immediately to a biscuit metal object, and sensitivity this moment is the highest, the distance that detection probe detects is maximum, distance of reaction can reach tens of millimeters, carefully adjusts potentiometer W1, makes the distance of reaction of detection probe be suitable for request for utilization.
Technical indicator
1. direct supply: 5.5～7V;
2. stand-by operation electric current :≤8.5mA;
3. complete machine maximum operating currenbt :≤21mA;
4. the average working current of complete machine :≤11mA;
5. detection distance: inductance type metal detector and metal object maximum detectable range are not less than 48mm.
Claims (1)
1. inductance type metal detector, it is comprised of 6V direct supply, detection probe and high-frequency oscillating circuits, multiplication of voltage detecting circuit, DC phase transferring amplifying circuit and photoelectricity indicating circuit, it is characterized in that:
described detection probe and high-frequency oscillating circuits are by higher-order of oscillation transformer (B), oscillating capacitance (C3), the first silicon transistor (BG1), potentiometer (W1), biasing resistor (R1) and shunt capacitance (C1), negative feedback resistor (R2) and negative feedback electric capacity (C2) form, the collector of one termination the first silicon transistor (BG1) of the III winding of higher-order of oscillation transformer (B) primary coil, one end of oscillating capacitance (C3), the other end and the 6V DC power anode (VCC) of another termination oscillating capacitance (C3) of the III winding of higher-order of oscillation transformer (B) primary coil, the base stage of the first silicon transistor (BG1) connects an end of the II winding of higher-order of oscillation transformer (B) secondary coil, one end and the lever arm thereof of another termination potentiometer (W1) of the II winding of higher-order of oscillation transformer (B) secondary coil, one end of one end of biasing resistor (R1) and shunt capacitance (C1), another termination 6V DC power anode (VCC) of potentiometer (W1), the other end connection circuit ground (GND) of biasing resistor (R1) other end and shunt capacitance (C1), the emitter of the first silicon transistor (BG1) connects an end of negative feedback resistor (R2) and an end of negative feedback electric capacity (C2), the other end connection circuit ground (GND) of the other end of negative feedback resistor (R2) and negative feedback electric capacity (C2),
Described multiplication of voltage detecting circuit is comprised of two germanium diodes (D1, D2) and filter capacitor (C4), the negative pole of one termination the first germanium diode (D1) of the I winding of higher-order of oscillation transformer (B) inductive coil and the positive pole of the second germanium diode (D2), the other end connection circuit ground (GND) of the I winding of higher-order of oscillation transformer (B) inductive coil, the anodal connection circuit of the first germanium diode (D1) ground (GND), the second germanium diode (D2) negative pole connects the positive pole of filter capacitor (C4), the negative pole connection circuit ground (GND) of filter capacitor (C4);
described direct current amplification phase inverter and photoelectricity indicating circuit are by the second silicon transistor (BG2), build-out resistor (R3), dropping resistor (R4) and emitting red light two utmost points (LED) form, the base stage of the second silicon transistor (BG2) connects an end of build-out resistor (R3), the other end connection circuit ground (GND) of the emitter of the second silicon transistor (BG2) and build-out resistor (R3), the collector of the second silicon transistor (BG2) connects the negative pole of emitting red light two utmost points (LED), the positive pole of emitting red light two utmost points (LED) connects an end of dropping resistor (R4), another termination 6V DC power anode (VCC) of dropping resistor (R4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103747431A CN102520452B (en) | 2011-11-23 | 2011-11-23 | Inductance type metal detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103747431A CN102520452B (en) | 2011-11-23 | 2011-11-23 | Inductance type metal detector |
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| CN102520452A CN102520452A (en) | 2012-06-27 |
| CN102520452B true CN102520452B (en) | 2013-11-20 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103558640A (en) * | 2013-11-10 | 2014-02-05 | 吴建堂 | Security check channel metal detecting device |
| CN103592688A (en) * | 2013-11-12 | 2014-02-19 | 周芸 | Metal detection module of security door |
| CN104297805B (en) * | 2014-11-07 | 2017-03-29 | 杨睿智 | Metal detecting device |
| CN105703168A (en) * | 2016-03-21 | 2016-06-22 | 吴圣铎 | Split-type human electromagnetic induction electric iron power socket |
| CN107765316B (en) * | 2017-09-25 | 2020-07-24 | 西安电子科技大学 | Cable path detection multi-frequency emission system and method and cable path detection instrument |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3919629A (en) * | 1973-11-05 | 1975-11-11 | Carol L Scruggs | Proximity sensing device using an inductance and capacitance resonant bridge network |
| GB2011086A (en) * | 1977-10-13 | 1979-07-04 | Skf Uk Ltd | Improvements in or relating to inductive proximity detectors |
| SU817643A1 (en) * | 1979-05-04 | 1981-03-30 | Днепропетровский Ордена Трудовогокрасного Знамени Государственныйуниверситет Им. 300-Летия Boc-Соединения Украины C Россией | Self-excited metal detector with acoustic indicator |
| CN201035156Y (en) * | 2007-04-10 | 2008-03-12 | 上海凯歌电子有限公司 | Metal detector and its sensor |
| CN201852950U (en) * | 2010-08-26 | 2011-06-01 | 刘家发 | Portable metal detection device |
| CN102096109B (en) * | 2010-11-10 | 2013-04-17 | 刘昭利 | Inductance type metal approach detecting probe |
| CN201886158U (en) * | 2010-12-10 | 2011-06-29 | 何海参 | Electromagnetic field metal detector |
| CN202383306U (en) * | 2011-11-23 | 2012-08-15 | 刘德军 | Inductance type metal detector |
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Owner name: HUANG YONG Free format text: FORMER OWNER: LIU DEJUN Effective date: 20130729 |
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Effective date of registration: 20130729 Address after: Bengshan Wing Street 233000 Anhui city of Bengbu province No. 120 Municipal Construction Committee Applicant after: Huang Yong Address before: Tu Shan Lu Yuhui District 233000 Anhui city of Bengbu Province, No. 187 Applicant before: Liu Dejun |
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Effective date of registration: 20170714 Address after: 526114. The first floor of the Buddha mound section (Ye Hanlin and Lan Xiujie building) on the old Zhao River Highway, Gaoyao Town, Gaoyao District, Guangdong, Zhaoqing Patentee after: Zhaoqing Qihua Electronic Technology Co. Ltd. Address before: Bengshan Wing Street 233000 Anhui city of Bengbu province No. 120 Municipal Construction Committee Patentee before: Huang Yong |
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