CN103547542A - 导电糊料组合物及由其制成的半导体器件 - Google Patents

导电糊料组合物及由其制成的半导体器件 Download PDF

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Publication number
CN103547542A
CN103547542A CN201280024221.1A CN201280024221A CN103547542A CN 103547542 A CN103547542 A CN 103547542A CN 201280024221 A CN201280024221 A CN 201280024221A CN 103547542 A CN103547542 A CN 103547542A
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CN
China
Prior art keywords
paste composition
substrate
lead
tellurium
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201280024221.1A
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English (en)
Chinese (zh)
Inventor
K·W·杭
K·R·米克斯卡
R·G·瑞简德安
C·托拉迪
P·D·韦尔努伊
Y·王
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EIDP Inc
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EI Du Pont de Nemours and Co
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Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of CN103547542A publication Critical patent/CN103547542A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering or brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B23K35/025—Pastes, creams or slurries
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400°C
    • B23K35/268—Pb as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings or fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/3601—Selection of non-metallic compositions, e.g. coatings or fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with inorganic compounds as principal constituents
    • B23K35/3602—Carbonates, basic oxides or hydroxides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Photovoltaic Devices (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
CN201280024221.1A 2011-03-24 2012-03-23 导电糊料组合物及由其制成的半导体器件 Pending CN103547542A (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201161467003P 2011-03-24 2011-03-24
US61/467,003 2011-03-24
US201161522368P 2011-08-11 2011-08-11
US61/522,368 2011-08-11
US201161549384P 2011-10-20 2011-10-20
US61/549,384 2011-10-20
PCT/US2012/030475 WO2012129554A2 (en) 2011-03-24 2012-03-23 Conductive paste composition and semiconductor devices made therewith

Publications (1)

Publication Number Publication Date
CN103547542A true CN103547542A (zh) 2014-01-29

Family

ID=46172869

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280024221.1A Pending CN103547542A (zh) 2011-03-24 2012-03-23 导电糊料组合物及由其制成的半导体器件

Country Status (6)

Country Link
US (2) US8900487B2 (https=)
EP (1) EP2689464A2 (https=)
JP (1) JP2014512073A (https=)
CN (1) CN103547542A (https=)
TW (1) TW201245361A (https=)
WO (1) WO2012129554A2 (https=)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105858623A (zh) * 2016-03-30 2016-08-17 苏州开元民生科技股份有限公司 亚碲酸银的制备方法、晶体太阳能电池正极银浆及其制备方法
CN106448802A (zh) * 2015-08-07 2017-02-22 E.I.内穆尔杜邦公司 导电糊料组合物及由其制成的半导体装置
CN106537516A (zh) * 2014-07-21 2017-03-22 太阳化学公司 含有有机铋化合物的银糊料和其在太阳能电池中的应用
CN107293349A (zh) * 2016-04-13 2017-10-24 E.I.内穆尔杜邦公司 导电糊料组合物和用其制成的半导体装置
CN108321224A (zh) * 2017-10-30 2018-07-24 无锡帝科电子材料科技有限公司 用于制备太阳能电池电极的多元纳米材料、包括其的糊剂组合物及太阳能电池电极和电池
CN108735334A (zh) * 2017-04-18 2018-11-02 E.I.内穆尔杜邦公司 导电糊料组合物及用其制成的半导体装置
CN111801392A (zh) * 2018-03-21 2020-10-20 庄信万丰股份有限公司 导电浆料、方法、电极和太阳能电池
CN113800889A (zh) * 2021-09-10 2021-12-17 厦门海洋芯科技有限公司 一种碳赫兹膜及其应用

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JP5782112B2 (ja) 2010-05-04 2015-09-24 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーＥ．Ｉ．Ｄｕ Ｐｏｎｔ Ｄｅ Ｎｅｍｏｕｒｓ Ａｎｄ Ｃｏｍｐａｎｙ 鉛およびテルル酸化物を含有する厚膜ペーストと半導体デバイスの製造においてのそれらの使用
KR20130064659A (ko) * 2011-12-08 2013-06-18 제일모직주식회사 태양전지 전극용 페이스트 조성물 및 이로부터 제조된 전극
WO2013129578A1 (ja) * 2012-02-28 2013-09-06 京セラ株式会社 太陽電池の電極用導電性ペースト、太陽電池および太陽電池の製造方法
EP2859557A4 (en) * 2012-06-12 2015-12-09 Heraeus Precious Metals North America Conshohocken Llc ELECTRICALLY CONDUCTIVE PASTE WITH ADHESIVE
US8969709B2 (en) 2012-08-30 2015-03-03 E I Du Pont De Nemours And Company Use of a conductive composition containing lead—tellurium-based oxide in the manufacture of semiconductor devices with lightly doped emitters
US9236161B2 (en) * 2012-09-06 2016-01-12 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
US10069021B2 (en) 2012-10-12 2018-09-04 Heraeus Deutschland GmbH & Co. KG Electro-conductive pastes with salts with an anion consisting of halogen and oxygen in solar cell applications
JP5756447B2 (ja) * 2012-10-31 2015-07-29 株式会社ノリタケカンパニーリミテド 太陽電池用導電性ペースト組成物
TWI453087B (zh) * 2012-11-22 2014-09-21 Truan Sheng Lui 光伏鋁銲帶
KR101557536B1 (ko) 2012-12-21 2015-10-06 제일모직주식회사 태양전지 전극용 페이스트 조성물 및 이로부터 제조된 전극
CN103915127B (zh) * 2013-01-03 2017-05-24 上海匡宇科技股份有限公司 用于表面高方阻硅基太阳能电池正面银浆及其制备方法
TWI493729B (zh) * 2013-02-08 2015-07-21 Giga Solar Materials Corp 用於太陽能電池正面電極之導電漿及其製造方法
ES2684721T3 (es) * 2013-04-02 2018-10-04 Heraeus Deutschland GmbH & Co. KG Partículas que comprenden AI, Si y Mg en pastas electroconductoras y preparación de células fotovoltaicas
EP2792642B1 (de) 2013-04-15 2018-02-21 Heraeus Deutschland GmbH & Co. KG Sinterpaste mit gecoateten Silberoxid auf schwer sinterbare edlen und unedlen Oberflächen
US9799421B2 (en) 2013-06-07 2017-10-24 Heraeus Precious Metals North America Conshohocken Llc Thick print copper pastes for aluminum nitride substrates
EP2822000B1 (en) * 2013-07-03 2020-10-21 Heraeus Precious Metals North America Conshohocken LLC Thick print copper pastes for aluminium nitride substrates
KR101608123B1 (ko) 2013-09-13 2016-03-31 제일모직주식회사 태양전지 전극　형성용 조성물 및 이로부터 제조된 전극
US9793025B2 (en) * 2013-12-03 2017-10-17 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
KR101780531B1 (ko) * 2013-12-17 2017-09-22 삼성에스디아이 주식회사 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극
JP6046753B2 (ja) 2014-01-17 2016-12-21 ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー 改良された接着特性を有する鉛−ビスマス−テルル−ケイ酸塩無機反応系
TWI577742B (zh) * 2014-06-20 2017-04-11 賀利氏貴金屬北美康舍霍肯有限責任公司 用於導電性漿料之有機載體
WO2016007351A1 (en) * 2014-07-11 2016-01-14 E. I. Du Pont De Nemours And Company Flowable compositions with low temperature curing to form thermally conductive pathways in electronics type applications and methods relating thereto
EP3311388B1 (en) * 2015-06-17 2019-04-17 Basf Se Conductive paste comprising lubricating oils and semiconductor device
US20170144920A1 (en) * 2015-11-20 2017-05-25 Giga Solar Materials Corp. Crystalline oxides, preparation thereof and conductive pastes containing the same
WO2021049553A1 (ja) * 2019-09-10 2021-03-18 白光株式会社 はんだ付け装置
CN119744252A (zh) * 2022-09-15 2025-04-01 株式会社 尼康 玻璃组合物和标准试样玻璃

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CN1873836A (zh) * 2005-04-14 2006-12-06 E.I.内穆尔杜邦公司 制造半导体器件的方法以及用于该方法的导电组合物

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JP5782112B2 (ja) * 2010-05-04 2015-09-24 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーＥ．Ｉ．Ｄｕ Ｐｏｎｔ Ｄｅ Ｎｅｍｏｕｒｓ Ａｎｄ Ｃｏｍｐａｎｙ 鉛およびテルル酸化物を含有する厚膜ペーストと半導体デバイスの製造においてのそれらの使用
US20130049148A1 (en) * 2011-02-22 2013-02-28 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
US8696948B2 (en) * 2011-08-11 2014-04-15 E I Du Pont De Nemours And Company Thick film paste containing lead—tellurium—lithium—titanium—oxide and its use in the manufacture of semiconductor devices
US9023254B2 (en) * 2011-10-20 2015-05-05 E I Du Pont De Nemours And Company Thick film silver paste and its use in the manufacture of semiconductor devices
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WO1992000924A1 (en) * 1990-07-09 1992-01-23 Cookson Group Plc Tellurite glass compositions
CN1873836A (zh) * 2005-04-14 2006-12-06 E.I.内穆尔杜邦公司 制造半导体器件的方法以及用于该方法的导电组合物

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106537516A (zh) * 2014-07-21 2017-03-22 太阳化学公司 含有有机铋化合物的银糊料和其在太阳能电池中的应用
CN106448802A (zh) * 2015-08-07 2017-02-22 E.I.内穆尔杜邦公司 导电糊料组合物及由其制成的半导体装置
US10784383B2 (en) 2015-08-07 2020-09-22 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
CN106448802B (zh) * 2015-08-07 2021-03-02 杜邦电子公司 导电糊料组合物及由其制成的半导体装置
CN105858623A (zh) * 2016-03-30 2016-08-17 苏州开元民生科技股份有限公司 亚碲酸银的制备方法、晶体太阳能电池正极银浆及其制备方法
CN107293349A (zh) * 2016-04-13 2017-10-24 E.I.内穆尔杜邦公司 导电糊料组合物和用其制成的半导体装置
CN107293349B (zh) * 2016-04-13 2020-12-25 E.I.内穆尔杜邦公司 导电糊料组合物和用其制成的半导体装置
CN108735334A (zh) * 2017-04-18 2018-11-02 E.I.内穆尔杜邦公司 导电糊料组合物及用其制成的半导体装置
CN108321224A (zh) * 2017-10-30 2018-07-24 无锡帝科电子材料科技有限公司 用于制备太阳能电池电极的多元纳米材料、包括其的糊剂组合物及太阳能电池电极和电池
CN111801392A (zh) * 2018-03-21 2020-10-20 庄信万丰股份有限公司 导电浆料、方法、电极和太阳能电池
CN113800889A (zh) * 2021-09-10 2021-12-17 厦门海洋芯科技有限公司 一种碳赫兹膜及其应用

Also Published As

Publication number Publication date
US20150083217A1 (en) 2015-03-26
WO2012129554A2 (en) 2012-09-27
US8900487B2 (en) 2014-12-02
EP2689464A2 (en) 2014-01-29
US20130068290A1 (en) 2013-03-21
JP2014512073A (ja) 2014-05-19
US9640675B2 (en) 2017-05-02
WO2012129554A3 (en) 2013-02-28
TW201245361A (en) 2012-11-16

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Application publication date: 20140129