CN103543461B - 辐射检测器及其制造方法 - Google Patents

辐射检测器及其制造方法 Download PDF

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Publication number
CN103543461B
CN103543461B CN201310291536.9A CN201310291536A CN103543461B CN 103543461 B CN103543461 B CN 103543461B CN 201310291536 A CN201310291536 A CN 201310291536A CN 103543461 B CN103543461 B CN 103543461B
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CN
China
Prior art keywords
region
scintillator layer
activator
concentration
thickness
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Expired - Fee Related
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CN201310291536.9A
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English (en)
Chinese (zh)
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CN103543461A (zh
Inventor
川西光宏
草山育实
五十岚崇裕
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Sony Corp
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Sony Corp
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Publication date
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Publication of CN103543461A publication Critical patent/CN103543461A/zh
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Publication of CN103543461B publication Critical patent/CN103543461B/zh
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20187—Position of the scintillator with respect to the photodiode, e.g. photodiode surrounding the crystal, the crystal surrounding the photodiode, shape or size of the scintillator
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/496—Luminescent members, e.g. fluorescent sheets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Conversion Of X-Rays Into Visible Images (AREA)
CN201310291536.9A 2012-07-12 2013-07-11 辐射检测器及其制造方法 Expired - Fee Related CN103543461B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012156183A JP5928208B2 (ja) 2012-07-12 2012-07-12 放射線検出器
JP2012-156183 2012-07-12

Publications (2)

Publication Number Publication Date
CN103543461A CN103543461A (zh) 2014-01-29
CN103543461B true CN103543461B (zh) 2017-08-22

Family

ID=49913275

Family Applications (1)

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CN201310291536.9A Expired - Fee Related CN103543461B (zh) 2012-07-12 2013-07-11 辐射检测器及其制造方法

Country Status (3)

Country Link
US (1) US8962370B2 (enExample)
JP (1) JP5928208B2 (enExample)
CN (1) CN103543461B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6221352B2 (ja) * 2013-05-30 2017-11-01 コニカミノルタ株式会社 放射線画像変換パネル、および放射線画像検出器
US9496061B2 (en) * 2013-06-10 2016-11-15 Konica Minolta, Inc. Radiographic image conversion panel
KR101784118B1 (ko) * 2013-07-16 2017-10-10 도시바 덴시칸 디바이스 가부시키가이샤 방사선 검출기, 신틸레이터 패널, 및 그 제조 방법
TWI550836B (zh) * 2014-05-06 2016-09-21 友達光電股份有限公司 光偵測器及其製造方法
US10705228B2 (en) 2014-06-18 2020-07-07 Oregon State University Photo sensor for use as a radiation detector and power supply and method for making and using the device
JP6671839B2 (ja) * 2014-10-07 2020-03-25 キヤノン株式会社 放射線撮像装置及び撮像システム
US10422888B1 (en) 2015-07-17 2019-09-24 Triad National Security, Llc Scintillation detectors
JP6770286B2 (ja) * 2015-10-20 2020-10-14 キヤノン電子管デバイス株式会社 シンチレータパネルおよびその製造方法
JP6591256B2 (ja) * 2015-10-20 2019-10-16 キヤノン電子管デバイス株式会社 放射線検出器およびその製造方法
JP6433560B1 (ja) 2017-09-27 2018-12-05 浜松ホトニクス株式会社 シンチレータパネル及び放射線検出器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003050298A (ja) * 2001-08-06 2003-02-21 Fuji Photo Film Co Ltd 放射線像変換パネルおよびその製造方法
EP1779140B1 (en) * 2004-08-10 2018-06-20 Canon Kabushiki Kaisha Radiation detecting apparatus, scintillator panel, their manufacturing method and radiation detecting system
JP5089195B2 (ja) * 2006-03-02 2012-12-05 キヤノン株式会社 放射線検出装置、シンチレータパネル、放射線検出システム及び放射線検出装置の製造方法
JP4920994B2 (ja) * 2006-03-02 2012-04-18 キヤノン株式会社 シンチレータパネル、放射線検出装置及び放射線検出システム
JP2008224357A (ja) * 2007-03-12 2008-09-25 Konica Minolta Medical & Graphic Inc シンチレータプレート
JP5152179B2 (ja) * 2007-04-05 2013-02-27 コニカミノルタエムジー株式会社 シンチレータプレート
JP2010014469A (ja) * 2008-07-02 2010-01-21 Fujifilm Corp 放射線像変換パネルの製造方法
EP2369596B1 (en) * 2008-11-28 2014-07-02 Konica Minolta Medical & Graphic, Inc. Scintillator panel
JP5720566B2 (ja) * 2009-06-26 2015-05-20 コニカミノルタ株式会社 シンチレータパネル、シンチレータパネルの製造方法、放射線画像検出器および放射線画像検出器の製造方法
JP5791281B2 (ja) * 2010-02-18 2015-10-07 キヤノン株式会社 放射線検出装置及び放射線検出システム
JP5661426B2 (ja) * 2010-11-01 2015-01-28 株式会社東芝 放射線検出器及びその製造方法
JP5422581B2 (ja) * 2011-01-31 2014-02-19 富士フイルム株式会社 放射線画像検出装置及びその製造方法
JP2013152160A (ja) * 2012-01-25 2013-08-08 Canon Inc 放射線撮像装置及び放射線撮像システム

Also Published As

Publication number Publication date
US20140015082A1 (en) 2014-01-16
CN103543461A (zh) 2014-01-29
JP2014020781A (ja) 2014-02-03
US8962370B2 (en) 2015-02-24
JP5928208B2 (ja) 2016-06-01

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Granted publication date: 20170822