CN103542280B - 发光设备 - Google Patents

发光设备 Download PDF

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Publication number
CN103542280B
CN103542280B CN201310241333.9A CN201310241333A CN103542280B CN 103542280 B CN103542280 B CN 103542280B CN 201310241333 A CN201310241333 A CN 201310241333A CN 103542280 B CN103542280 B CN 103542280B
Authority
CN
China
Prior art keywords
layer
wavelength conversion
light emitting
light
conversion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201310241333.9A
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English (en)
Chinese (zh)
Other versions
CN103542280A (zh
Inventor
韩载天
闵正明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN103542280A publication Critical patent/CN103542280A/zh
Application granted granted Critical
Publication of CN103542280B publication Critical patent/CN103542280B/zh
Active legal-status Critical Current
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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
    • F21V13/02—Combinations of only two kinds of elements
    • F21V13/08—Combinations of only two kinds of elements the elements being filters or photoluminescent elements and reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Planar Illumination Modules (AREA)
CN201310241333.9A 2012-07-09 2013-06-18 发光设备 Active CN103542280B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020120074659A KR101961310B1 (ko) 2012-07-09 2012-07-09 발광 장치
KR10-2012-0074659 2012-07-09

Publications (2)

Publication Number Publication Date
CN103542280A CN103542280A (zh) 2014-01-29
CN103542280B true CN103542280B (zh) 2017-12-08

Family

ID=48745811

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310241333.9A Active CN103542280B (zh) 2012-07-09 2013-06-18 发光设备

Country Status (5)

Country Link
US (1) US9347650B2 (enExample)
EP (1) EP2685496B1 (enExample)
JP (1) JP2014017474A (enExample)
KR (1) KR101961310B1 (enExample)
CN (1) CN103542280B (enExample)

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* Cited by examiner, † Cited by third party
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JP2016029686A (ja) * 2014-07-25 2016-03-03 サンケン電気株式会社 発光装置
KR20160017849A (ko) * 2014-08-06 2016-02-17 서울바이오시스 주식회사 고출력 발광 장치 및 그 제조 방법
KR102346157B1 (ko) * 2015-03-23 2021-12-31 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지
TWI541472B (zh) 2015-06-11 2016-07-11 友達光電股份有限公司 背光模組
CN106907578A (zh) * 2015-12-22 2017-06-30 鸿富锦精密工业（深圳）有限公司 照明装置
US10235911B2 (en) * 2016-01-12 2019-03-19 Ford Global Technologies, Llc Illuminating badge for a vehicle
JP6906914B2 (ja) * 2016-08-31 2021-07-21 エルジー ディスプレイ カンパニー リミテッド 波長選択素子、光源装置及び表示装置
CN106764927A (zh) * 2016-12-17 2017-05-31 张清 反射灯罩以及led路灯
KR102730359B1 (ko) * 2017-01-25 2024-11-18 엘지이노텍 주식회사 광원 모듈 및 이를 구비한 조명 장치
CN110612417A (zh) * 2017-05-17 2019-12-24 夏普株式会社 背光单元、显示设备、背光单元的制造方法及背光单元的制造装置
CN111081691B (zh) * 2019-12-23 2025-08-05 南昌大学 一种多基色led光源的模组结构
KR20210115236A (ko) 2020-03-12 2021-09-27 엘지이노텍 주식회사 광원모듈
US20240404998A1 (en) * 2023-05-31 2024-12-05 Creeled, Inc. Cover structure for beamshaping for light emitting diode packages

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102203505A (zh) * 2008-11-06 2011-09-28 皇家飞利浦电子股份有限公司 照明设备
CN102270629A (zh) * 2010-06-01 2011-12-07 Lg伊诺特有限公司 发光器件封装及照明系统
CN102299245A (zh) * 2010-06-22 2011-12-28 日东电工株式会社 复合膜和使用该复合膜的半导体发光器件
CN102460748A (zh) * 2009-06-09 2012-05-16 飞利浦拉米尔德斯照明设备有限责任公司 具有远程磷光体层和反射基板的led

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JP2004179601A (ja) * 2002-11-22 2004-06-24 Toshiaki Sakaida 発光装置
US7462502B2 (en) * 2004-11-12 2008-12-09 Philips Lumileds Lighting Company, Llc Color control by alteration of wavelength converting element
TWI433344B (zh) * 2004-12-24 2014-04-01 Kyocera Corp 發光裝置及照明裝置
US7821194B2 (en) * 2006-04-18 2010-10-26 Cree, Inc. Solid state lighting devices including light mixtures
JP4847793B2 (ja) 2006-06-01 2011-12-28 京セラ株式会社 発光装置
US7842960B2 (en) * 2006-09-06 2010-11-30 Lumination Llc Light emitting packages and methods of making same
TW200822403A (en) 2006-10-12 2008-05-16 Matsushita Electric Industrial Co Ltd Light-emitting device and method for manufacturing the same
JP2008153466A (ja) * 2006-12-18 2008-07-03 Matsushita Electric Works Ltd 発光装置
US20090147513A1 (en) * 2007-12-05 2009-06-11 Lumination Llc Backlighting led power devices
JP5113573B2 (ja) * 2008-03-24 2013-01-09 パナソニック株式会社 Ｌｅｄ照明装置
TWI384651B (zh) 2008-08-20 2013-02-01 Au Optronics Corp 發光二極體結構及其製造方法
EP2412038B1 (en) * 2009-03-19 2019-01-02 Philips Lighting Holding B.V. Illumination device with remote luminescent material
US8431423B2 (en) 2009-07-16 2013-04-30 Koninklijke Philips Electronics N.V. Reflective substrate for LEDS
WO2011013188A1 (ja) * 2009-07-27 2011-02-03 株式会社 東芝 発光装置
JP2012009719A (ja) * 2010-06-28 2012-01-12 Kyocera Corp 発光装置および照明装置
WO2012011528A1 (ja) 2010-07-22 2012-01-26 京セラ株式会社 発光装置および照明装置
DE102010045390B4 (de) * 2010-09-15 2025-07-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronisches Halbleiterbauteils
US8552454B2 (en) * 2010-11-29 2013-10-08 Epistar Corporation Light-emitting device and light mixing device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102203505A (zh) * 2008-11-06 2011-09-28 皇家飞利浦电子股份有限公司 照明设备
CN102460748A (zh) * 2009-06-09 2012-05-16 飞利浦拉米尔德斯照明设备有限责任公司 具有远程磷光体层和反射基板的led
CN102270629A (zh) * 2010-06-01 2011-12-07 Lg伊诺特有限公司 发光器件封装及照明系统
CN102299245A (zh) * 2010-06-22 2011-12-28 日东电工株式会社 复合膜和使用该复合膜的半导体发光器件

Also Published As

Publication number Publication date
JP2014017474A (ja) 2014-01-30
EP2685496B1 (en) 2020-03-25
KR101961310B1 (ko) 2019-07-17
US20140009930A1 (en) 2014-01-09
EP2685496A3 (en) 2016-01-27
EP2685496A2 (en) 2014-01-15
US9347650B2 (en) 2016-05-24
KR20140007209A (ko) 2014-01-17
CN103542280A (zh) 2014-01-29

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
EXSB Decision made by sipo to initiate substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
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TR01 Transfer of patent right

Effective date of registration: 20210823

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China