CN103540987A - Al or Al-alloy - Google Patents

Al or Al-alloy Download PDF

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CN103540987A
CN103540987A CN201310424558.8A CN201310424558A CN103540987A CN 103540987 A CN103540987 A CN 103540987A CN 201310424558 A CN201310424558 A CN 201310424558A CN 103540987 A CN103540987 A CN 103540987A
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hardness
oxide film
alloy
anode oxide
resistance
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CN103540987B (en
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久本淳
和田浩司
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Kobe Steel Ltd
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    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02Anodisation
    • C25D11/04Anodisation of aluminium or alloys based thereon

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Abstract

This invention provides an Al or Al alloy having an anodic oxide film, wherein the anodic oxide film has sites different in hardness in its thickness direction, and the difference in hardness between the highest hardness site and the lowest hardness site is 5 or more in terms of Vickers hardness. Preferably, the hardness at the lowest hardness site in the Al or Al alloy is 300 or more in terms of Vickers hardness. Preferably, the content of Fe in the anodic oxide film in the Al or Al alloy is not more than 500 ppm. The Al or Al alloy has an anodic oxide film having excellent cracking resistance even in the case of high hardness.

Description

Al or Al alloy
The application is application number: 200880014768.7, and the applying date: 2008.04.18, denomination of invention: the dividing an application of the application of " Al or Al alloy ".
Technical field
The invention belongs to the technical field that relates to Al or Al alloy, particularly belong to the member of the vacuum chamber that relates to the semi-conductor of CVD device, PVD device, ion implantation apparatus, sputter equipment, dry etching device etc. and the manufacturing installation of liquid crystal and be located at Al that its inner member uses or the technical field of Al alloy.
Background technology
Inside at the vacuum chamber of the semi-conductor of CVD device, PVD device, ion implantation apparatus, sputter equipment, dry etching device etc. and the manufacturing installation of liquid crystal, because the corrosive gases that contains haloid element is imported into as reactant gases, etching gas, purge gas, therefore require it to there is the erosion resistance (below also referred to as gasproof body corrodibility) for corrosive gases.In addition, among above-mentioned vacuum chamber, because the plasma body of halogen family is occurred, so for the patience (below also referred to as plasma-resistance) of plasma body also come into one's own (with reference to JP 2003-34894 communique, JP 2004-225113 communique etc.) more.In recent years, as the member of such vacuum chamber, employing be Al and the Al alloy of light weight and heat conductivity excellence.
Yet Al and Al alloy do not have sufficient gasproof body corrodibility and plasma-resistance, therefore proposing has the various surfaction technology for these characteristics are improved, but still expects the further raising of these characteristics.
In the raising of plasma-resistance, effectively make the anode oxide film of the surface formation high rigidity of Al and Al alloy.The abrasion that the anode oxide film of high rigidity causes for the physical energy of plasma body have patience, can improve plasma-resistance (with reference to JP 2004-225113 communique etc.).
Yet crackle easily occurs the anode oxide film of high rigidity, if crackle occurs and connects anode oxide film, the problem existing is, the crackle (below also referred to as through check) that corrosive gases has connected by this is invaded, and the Al of base material and Al alloy corrode.
Therefore, only on the surface of Al and Al alloy, form the anode oxide film of high rigidity, allow to improve plasma-resistance, but still can cause such problem points, that is, easily there is through check in anode oxide film, causes that thus the Al of base material and Al alloy corrode.Therefore, just expectation forms a kind of anode oxide film, and it not only has high rigidity, but also has the characteristic (below also referred to as resistance to cracking line) that is difficult to occur through check.That is, a kind of under high rigidity even if expectation forms, resistance to cracking line is the anode oxide film of excellence also.
Particularly, if suppress semiconductor wafer and liquid crystal glass base Fe pollute and reduce the Fe content in Al alloy, become the poor anodic oxide coating of Fe, but because this anodic oxide coating hardening, so resistance to cracking line is poor, the therefore raising of strong its resistance to cracking line of expectation.
Patent documentation 1: JP 2003-34894 communique
Patent documentation 2: JP 2004-225113 communique
Summary of the invention
The present invention does in view of such situation, and its object is, a kind of Al or Al alloy are provided, even if it has also excellent anode oxide film of under high rigidity resistance to cracking line.
The present inventors are research with keen determination in order to reach above-mentioned purpose, and its result is until complete the present invention.According to the present invention, can reach above-mentioned purpose.
That is, the present invention of above-mentioned purpose be can so complete and reach, following (1)~(3) described Al or Al alloy related to.
(1) be a kind of Al or Al alloy with anode oxide film, described anode oxide film has at its thickness direction the position that hardness is different, its inner hardness of the surperficial hardness ratio of described anode oxide film is little, and the difference of the hardness at the maximum position of hardness wherein and the hardness at the minimum position of hardness is counted more than 5 with Vickers' hardness.
(2) described (1) is recorded Al or Al alloy, described in it, the hardness at the minimum position of hardness is counted more than 300 with Vickers' hardness.
(3) described (2) are recorded Al or Al alloy, described in it below Fe content 500ppm of anode oxide film.
Even if Al of the present invention or Al alloy have still excellent anode oxide film of under high rigidity resistance to cracking line.Even if this anode oxide film is high rigidity, resistance to cracking line is excellent (being difficult to occur through check) also, therefore the Al of base material and the corrosion of Al alloy that, occurs to cause due to the through check of anode oxide film is difficult to occur (that is, the corrosive reduction of gasproof body is difficult to occur).Therefore,, even while improving the hardness of anode oxide film in order to improve plasma-resistance, the corrosive reduction of gasproof body is still difficult to occur.Therefore, can not cause the corrosive reduction of gasproof body, the raising of plasma-resistance is implemented.
Accompanying drawing explanation
Fig. 1 means the figure of the whole crackle situation occurreds while there is crackle locally in anodic scale face (30mm * 30mm face).
Fig. 2 means the figure of a part of crackle situation occurred (the crackle situation occurreds in 235 μ m * 180 μ m faces) when anodic scale face (30mm * 30mm face) internal fissure homogeneous occurs.
Embodiment
Al of the present invention or Al alloy, as aforementioned, be Al or the Al alloy with anode oxide film, wherein, described anode oxide film has at its thickness direction the position that hardness is different, and the difference of the hardness at the maximum position of hardness wherein and the hardness at the minimum position of hardness is counted more than 5 with Vickers' hardness.Even if such anode oxide film is high rigidity, resistance to cracking line is also excellent.Its details are below described.
When the anode oxide film of Al and Al alloy is high rigidity, easily there is crackle in this anode oxide film.And the hardness of the anode oxide film of this Al and Al alloy at the thickness direction of this film all for the moment, if there is crackle in this film, is easily propagated with this crackle, the Al from this film surface transition to base material and Al alloy, crackle easily connects.In other words, through check easily occurs.With respect to this, when the hardness of the anode oxide film of Al and Al alloy is different on the thickness direction of this film, even if there is crackle to occur in this film, the propagation of this crackle also can be suppressed, and is difficult to reach the perforation of crackle.In other words, through check is difficult to occur.Therefore, if layeredly make its hardness of anode oxide film of Al and Al alloy different on the thickness direction of this film, the propagation of crackle is inhibited, and is therefore difficult to occur through check.But, if the difference of hardness of the layer of the layer of hardness maximum and hardness minimum with Vickers hardness tester lower than 5, the propagation of crackle is difficult to inhibition, and through check easily occurs.With respect to this, if the difference of this hardness with Vickers hardness tester more than 5, the propagation of crackle is inhibited, and is difficult to occur through check.
The anode oxide film of Al of the present invention or Al alloy, as aforementioned, has the different position of hardness on its thickness direction, and the difference of the hardness at the maximum position of hardness wherein and the hardness at the minimum position of hardness is counted more than 5 with Vickers' hardness.Therefore, even if this anode oxide film is high rigidity, crack propagation is also inhibited, and is therefore difficult to occur through check, and resistance to cracking line is excellent.
The anode oxide film of Al of the present invention like this or Al alloy, even if be high rigidity, also be difficult to occur through check, resistance to cracking line is excellent, therefore the Al of base material and the corrosion of Al alloy that, due to the through check of anode oxide film, occur to cause are difficult to occur (the corrosive reduction of gasproof body is difficult to occur).Therefore,, even while improving the hardness of anode oxide film in order to improve plasma-resistance, the corrosive reduction of gasproof body is still difficult to occur.Therefore, according to Al of the present invention or Al alloy, can not cause the corrosive reduction of gasproof body, the raising of plasma-resistance is implemented.
The anode oxide film of Al of the present invention or Al alloy, as aforementioned, there is the different position of hardness on its thickness direction, the difference of the hardness at the maximum position of hardness wherein and the hardness at the minimum position of hardness is counted more than 5 with Vickers' hardness, even if therefore this anode oxide film is high rigidity, crack propagation also can be suppressed, therefore, through check is difficult to occur, and resistance to cracking line is excellent.With respect to this, if the difference of the hardness at the hardness at the maximum position of this hardness and the minimum position of hardness with Vickers hardness tester lower than 5 o'clock, can demonstrate in fact the movement equal with the situation of hardness homogeneous (identical) on the thickness direction of anode oxide film, crack propagation is difficult to suppress, therefore, through check easily occurs, and resistance to cracking line is poor.
In the present invention, more than the number needs at the position that hardness is different on the thickness direction of anode oxide film will have 2 places, but if more than 2 places, the quantity at this position is not particularly limited.The minimum position of stiffness of hand in children degree, the maximum position of hardness among so-called these positions, refers to the highest position and the minimum position of hardness of hardness among these positions.
At the thickness direction of anode oxide film, the thickness of anode oxide film can change by spells, or also can continuity change (obliquely).
Make the crackle occurring in the inside of anode oxide film can not propagate into epithelium surface, so make the method that the hardness of inside of surperficial hardness ratio anode oxide film of anode oxide film is little effective.
In addition, in the present invention, from the viewpoint of the raising of plasma-resistance, the hardness at the minimum position of hardness among the different position of the thickness direction hardness of described anode oxide film, preferably counts more than 300 with Vickers' hardness.The abrasion that such anode oxide film brings for the physical energy of plasma body have patience, and plasma-resistance is excellent.
The hardness of anode oxide film, can control according to anodic oxidation treatment condition.Concrete hardness according to the composition of the Al alloy species of base material and anode oxidation treatment liquid and different, therefore needs suitable setting.
For the hardness of anode oxide film is changed at the thickness direction of anode oxide film, adopt as inferior method: the temperature variation that intermittently or continuously makes anode oxidation treatment liquid in the way of anodic oxidation treatment, and interrupt anodic oxidation treatment on the way, once take out object being treated from anode oxidation treatment liquid, liquid composition and/or the different anode oxidation treatment liquid of temperature with other re-start anodic oxidation treatment, by these methods, can make the changes in hardness on the thickness direction of anode oxide film.
When the temperature of anode oxidation treatment liquid is low, the chemical dissolution of the anodic oxide coating in anodic oxidation treatment is suppressed and hardening.
Fe content in Al alloy is counted the thousands of ppm of 0. number wt%(with market sale material).As base material, if use the Fe content Al alloy lower than the Fe content of described market sale material, the Fe content in the anodic oxide coating being formed by anodic oxidation treatment tails off, and can improve thus the hardness of anodic oxide coating.At this moment, about making the Fe content in anodic oxide coating reach which kind of degree, if the viewpoint of the inhibition of particularly also polluting in conjunction with the Fe of semiconductor wafer and liquid crystal glass base is preferably below 500ppm.
Can measure by following method the hardness of anode oxide film.; in cross-wise direction (making anode oxide film cross section and base material cross section become abrasive surface), Al and the Al alloy with anode oxide film are imbedded to resin; carry out the grinding of about #1200 and form the plane in anode oxide film cross section; in this anode oxide film cross section, with JIS Z2244(1998) method measure.
Also have, in order to measure the changes in hardness of the thickness direction of anode oxide film, have to respect to the thickness of anode oxide film and reduce fully the impression of measurement of hardness, for this reason, reduce to be used to form the load of the pressure head of impression, be specifically 5gf below.
When the size of impression can not be observed by the attached viewer of measurement of hardness machine (opticmicroscope etc.), use separately SEM and videomicroscopy (video microscope) etc. to observe, measure the size of impression.
Embodiment
Embodiments of the invention and comparative example are below described.Also have, the present invention is not limited by this embodiment, can in the scope of aim according to the invention, can suitably changed enforcement yet, and these are all included in the scope of technology of the present invention.
As the Al alloy of base material, mainly use JIS6061 alloy (thickness of slab: 3mm).The chemical composition of this Al alloy is presented in table 1.Fe content in this Al alloy is 0.4wt%.This Al alloy is represented by symbol 6061 in table 3~4 described later.
In addition, for the Fe content in anode oxide film is reduced, also use the Al alloy that Fe content is 0.02wt% (thickness of slab: 3mm) as base material.The chemical composition of this Al alloy is presented in table 2.This Al alloy is represented by symbol Fe0.02 in table 3 described later.
The plate that extracts 30 * 30 * 3mm from above-mentioned Al alloy, carries out anodic oxidation treatment to this Al alloy sheets, makes the surface of this Al alloy sheets form anode oxide film.At this moment, anodic oxidation treatment condition (thickness of the anode oxide film for the treatment of solution composition, treatment solution temperature, electrolysis voltage, formation) is the anodic oxidation treatment condition shown in table 3~4.In the situation of the embodiment of table 3, with the anodic oxidation treatment condition shown in the first layer one hurdle of table 3, carry out anodic oxidation treatment and after anode oxide film (the first layer) is formed, with the anodic oxidation treatment condition shown in the second layer one hurdle of table 3, carry out anodic oxidation treatment and anode oxide film (second layer) is formed.A part is with the anodic oxidation treatment condition shown in the notes of table 3, to carry out anodic oxidation treatment and make the 3rd layer of formation (No.15 of table 3) again.In the situation of the embodiment of table 4, between anodic oxidation treatment, as shown in temperature one hurdle of table 4, Yi Bian make continuously the temperature of anode oxidation treatment liquid increase, Yi Bian carry out anodic oxidation treatment.
For so making surface form the Al alloy sheets (hereinafter referred to as test film) of anode oxide film, according to following method, carry out mensuration, the resistance to Fractured evaluation test of anode oxide film, the plasma-resistance evaluation test of the hardness of Fe assay in anode oxide film, anode oxide film.
(mensuration of the Fe content in anode oxide film)
The degree that can not expose at the Al of base material alloy is dissolved in 7% aqueous hydrochloric acid of 100cc anodic oxide coating.Then, according to this, dissolve the weight change determination meltage W(g of the test film of front and back).On the other hand, the aqueous hydrochloric acid after this dissolving is carried out to icp analysis, try to achieve the Fe concentration in this hydrochloric acid water dissolving, be dissolved in the weight W of the Fe in this aqueous hydrochloric acid 100cc fe(g).According to this W feratio (W with aforementioned W fe/ W) try to achieve the Fe content (concentration) in anode oxide film.
(mensuration of the hardness of anode oxide film)
In cross-wise direction (making anode oxide film cross section and base material cross section become abrasive surface), test film is imbedded to resin, after grinding, for anode oxide film cross section, with JIS Z2244(1998) method measure hardness.In addition, by the optical microscope photograph in this anode oxide film cross section, confirmed the thickness of anode oxide film.
(the resistance to cracking line evaluation test of anode oxide film)
Test film is arranged in test chamber, heats.At this moment, with 30 minutes, from room temperature, be warming up to 150 ℃, keep after 60 minutes in these 150 ℃, with 30 minutes, be warming up to 250 ℃ from 150 ℃, in these 250 ℃, keep 1 hour.Also have, the pressure in test chamber is normal atmosphere.
After this heating, let cool to room temperature.In test chamber, reach after room temperature, take out test film.Then, by opticmicroscope (400 times), observe whole (30 * 30mm face) of the anodic scale face of this test film, try to achieve in the following manner crack density.
Crackle during local generation, is measured overall length (total of the length of each crackle) L(of the crackle in this 30 * 30mm face with reference to Fig. 1 in anodic scale face (30 * 30mm face)).Then, with the overall length L(mm of this crackle) divided by the area S(900mm of 30 * 30mm face 2), calculate crack density D(mm/mm 2).That is, try to achieve L/S=D(mm/mm 2).
Crackle, when anodic scale face (30 * 30mm face) occurs equably, is measured the overall length L(of the crackle in the face of 0.235 * 0.180mm with reference to Fig. 2).Then, with the overall length L(mm of this crackle) divided by the area S of 0.235 * 0.180mm face, calculate crack density D(mm/mm 2).That is, try to achieve L/S=D(mm/mm 2).That is, try to achieve L/S=D(mm/mm 2).
The crack density D(mm/mm so trying to achieve 2) less, resistance to cracking line is more excellent.; although above-mentioned crack density D is the density of the crackle that is identified on anodic oxide coating surface; but this crackle is to have arrived surface at the inner crack propagation occurring of anodic oxide coating; consequently on anodic oxide coating surface, be identified; therefore it be through check (connecting the crackle of anodic oxide coating) or close to this, so the degree (density) of the generation of above-mentioned crack density D and through check quite or proportional.Therefore, above-mentioned crack density D is less, and the degree of the generation of through check (density) is just less, so resistance to cracking line is more excellent.
According to the crack density D so trying to achieve, judge in the following manner the resistance to cracking line of anode oxide film.
D>=100mm/mm 2time: *, 100 > D>=10mm/mm 2time: △, 10 > D>=1mm/mm 2time: during zero, D < 1: ◎ (◎, zero, △: qualified, *: defective)
(plasma-resistance evaluation test)
With fluoro-resin, cover test film anodic scale face (30 * 30mm face) half and carry out plasma irradiating.At this moment, plasma irradiating condition is, gas: BCl 3, air pressure: 2mTorr, gas flow: 1000ccm, ICP:2000W, bias voltage: 100W, 120~150 ℃ of temperature, plasma irradiating time: 6hr.
After above-mentioned plasma irradiating, remove mask, mensuration plasma irradiating part is divided the poor D of section with non-illuminated portion (concealed part during plasma irradiating) p.The poor D of this section pmensuration carry out in the following manner.; with crosscut plasma irradiating part, divide with the mode of the boundary portion of non-illuminated portion and cut off after the test film after plasma irradiating; make this cut surface become abrasive surface and imbed resin; after grinding; utilize opticmicroscope to observe; measure plasma irradiating part and divide poor with the position of non-illuminated portion, the i.e. poor D of section p.Also has the poor D of this section pbe because when plasma irradiating, in plasma irradiating part, divide the physical energy due to plasma body to cause abrasion to occur, so the poor D of section pthe degree (wear loss) of the abrasion that can be in other words cause due to plasma irradiating.
The poor D of section so measuring p(wear loss of being brought by plasma irradiating) is less, and resistance to cracking line is more excellent.In sequence part one hurdle of the resistance to gas ions of table 3~4 described later, the poor D of section pwithin>=10 o'clock, be expressed as *, the poor D of 10 > section pbe expressed as △ at>=5 o'clock, the poor D of section pduring < 5, be expressed as zero.
(measuring and test-results)
The mensuration of Fe content in above-mentioned anode oxide film, the resistance to cracking line evaluation test of the mensuration of the hardness of anode oxide film, anode oxide film, the result of plasma-resistance evaluation test be presented in table 3~4.
The anode oxide film of the Al alloy of the embodiments of the invention in table 3, remove a part (No.15), by the first layer and the second layer, form, the difference of the hardness of this first layer and the hardness of the second layer is counted more than 5 (No.2,6,7,8,10,12,14) with Vickers' hardness.This part (No.15) consists of the first layer, the second layer and the 3rd layer, and the difference of the hardness at the minimum position of the hardness at the maximum position of hardness (the first layer) and hardness (second layer) is counted more than 5 with Vickers' hardness.The anode oxide film of the Al alloy of comparative example (No.5) except a part, forms its hardness homogeneous (No.1,3,4,9,11,13) by individual layer (only having the first layer).This part (No.5) its anode oxide film consists of the first layer and the second layer, but the difference of the hardness of the hardness of this first layer and the second layer with Vickers hardness tester lower than 5.
The anode oxide film of the Al alloy of above-mentioned comparative example, crack density D is high, resistance to cracking line in * level (No.1,3,4,9,11,13).With respect to this, the anode oxide film of the Al alloy of above-described embodiment, crack density D is low, and resistance to cracking line is in ◎, zero or the level of △, resistance to cracking line excellent (No.2,6,7,8,10,12,14,15).
In the anode oxide film of the Al of above-described embodiment alloy, the hardness at the minimum position of hardness (the first layer or the second layer) counts 300 when above with Vickers' hardness, the wear loss D being caused by plasma irradiating plittle, resistance to isoiony is in zero level, plasma-resistance excellent (No.6,7,8,10,12,14,15).
The anode oxide film of the Al alloy of the embodiments of the invention of table 4, the hardness of (thickness direction apart from its surface along film enters the position of 5 μ m) at the position apart from its surperficial 5 μ m, poor apart from the hardness at the position (thickness direction from its interface along film enters the position of 5 μ m) with the interface 5 μ m of base material, counts more than 5 (No.1a, 2a) with Vickers' hardness.D is low for this anode oxide film crack density, the level of resistance to cracking line in ◎ or zero, and resistance to cracking line is excellent.
In addition, the hardness at the minimum position of the hardness of this anode oxide film is counted more than 300 with Vickers' hardness really.Therefore the wear loss D that, this anode oxide film is caused by plasma irradiating plittle, resistance to isoiony is in zero level, plasma-resistance excellent (No.1a, 2a).
[table 1] (wt%)
Si Fe Cu Mn Mg Cr Zn Ti Al
0.65 0.40 0.31 0.05 1.02 0.12 0.05 0.02 Surplus
[table 2] (wt%)
Si Fe Cu Mn Mg Cr Zn Ti Al
0.67 0.02 0.26 0.02 1.05 0.22 0.03 0.03 Surplus
[table 3]
Figure BDA0000383369580000091
Note 1: epithelium is interrupted structure
Note 2: the hardness of epithelium is near the value each layer of central authorities
The treatment solution of noting the 3rd layer of formation processing of 3:No.15 is 160g/l sulfuric acid+3g/l oxalic acid
Treatment temp is 15 ℃, and voltage is 40V, and the thickness of the 3rd layer is 10 μ m,
Hardness is Hv375
[table 4]
Figure BDA0000383369580000101
Note 1: epithelium is interrupted structure
Note 2: epithelium hardness is to tell near value apart from face side 5 μ m
And apart near value substrate interface 5 μ m, this is poor
The poor of epithelium hardness
Also have, in above-described embodiment and comparative example, although mainly use JIS6061 alloy as the Al alloy of base material, while using the Al alloy beyond it, also can access the result identical with the above results.In addition, in the above-described embodiments, with the anodic oxidation treatment condition shown in table 3~4, carry out anodic oxidation treatment and form anode oxide film, but the anodic oxidation treatment condition with other replaces, when carrying out anodic oxidation treatment and forming anode oxide film with this, anode oxide film also has in its hardness direction the position that hardness is different, the difference of the hardness at the maximum position of hardness wherein and the hardness at hardness minimum position counts 5 when above with Vickers' hardness, crack density D is low, resistance to cracking line is excellent, in addition, the hardness at the minimum position of hardness counts 300 when above with Vickers' hardness, the wear loss D being caused by plasma irradiating plittle, resistance to isoiony is excellent.
With reference to specific mode, at length describe the present invention, but also can not depart from the spirit and scope of the present invention and make various changes and modifications, practitioner should be clear.
Also have, the Japanese patent application (Patent 2007-134503) of the application based on application on May 21st, 2007, its integral body is quoted by reference.
In addition, being included with reference to integral body of the full content being wherein cited.
In industry, utilize possibility
Al of the present invention or Al alloy, even if be high rigidity, still have the anode oxide film of resistance to cracking line excellence.Even because this anode oxide film resistance to cracking line also excellent (through check is difficult to occur) under high rigidity, so, the Al of base material being caused by the through check of anode oxide film and the corrosion of Al alloy are difficult to occur (that is, the reduction of resistance to gaseous corrosion is difficult to occur).Therefore, even while improving the hardness of anode oxide film in order to improve plasma-resistance, and the reduction of gaseous corrosion is also difficult to occur.Therefore, Al of the present invention or Al alloy, can not cause the corrosive reduction of gasproof body, can realize the raising of plasma-resistance.Therefore, Al of the present invention or Al alloy, can be applicable to need the member of the purposes of gasproof body corrodibility and plasma-resistance, member such as the vacuum chamber of the semi-conductor of CVD device, PVD device, ion implantation apparatus, sputter equipment, dry etching device etc. and the manufacturing installation of liquid crystal, it can not cause the corrosive reduction of gasproof body, useful for the raising that realizes plasma-resistance.

Claims (1)

1. an Al or Al alloy, there is anode oxide film, it is characterized in that, described anode oxide film has the position that hardness is different on its thickness direction, wherein the difference of the hardness at the maximum position of hardness and the hardness at hardness minimum position is counted more than 5 below 30 with Vickers' hardness, and the Fe content in described anode oxide film is below 500ppm
Described Al or Al alloy be used to semi-conductor and liquid crystal manufacturing installation vacuum chamber member and be located at its inner member.
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CN117491375A (en) * 2024-01-02 2024-02-02 中信戴卡股份有限公司 Quantitative characterization and evaluation method for oxide film defect of aluminum alloy casting

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