CN103540913A - 应用于气相沉积的反应器 - Google Patents
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Abstract
本发明公开一种应用于气相沉积的反应器,其包含承载体以及加热载体用的加热装置;承载体包含第一承载体以及形成于第一承载体之上的第二承载体,其中第一承载体的电磁波加热系数大于第二承载体的电磁波加热系数。
Description
技术领域
本发明涉及一种应用于气相沉积的反应器,包含加热装置以及承载体,而承载体还包含第二承载体以及电磁波加热系数大于第二承载体的第一承载体。
背景技术
在工业制作流程中,为了各种应用需求需要在各种产品表面上形成薄膜,例如以蒸镀方式形成。由于蒸镀的原理是将各种材料以原子或分子的尺寸在产品的表面形成薄膜,可以通过控制反应时间、温度以及气体流量来形成厚度与成分不同的薄膜。而蒸镀又常用于各种工业及日用品制作的加工应用,例如精密度高、尺寸细微的电子产业。
薄膜形成的过程中依据材料反应的机制,可以大致区分为物理气相沉积(Physical Vapor Deposition;PVD)及化学气相沉积(Chemical VaporDeposition;CVD)。因沉积技术、进行反应的反应器内温度、通入反应器的气体成分与产品表面的材料等各种因素影响,所形成薄膜可以具有不同的管芯结构,如单晶、多晶以及非结晶。除了能够满足上述的精密度及尺寸细微的要求之外,应用CVD或者PVD的制作工艺方法来形成薄膜,更可以在反应的气体中直接掺入杂质,通过控制薄膜中杂质的含量与分布(dopantprofile),可以精确地控制薄膜的成分。
其中一种常见的薄膜形成方式是金属有机化学气相沉积(Metal OrganicChemical Vapor Deposition;MOCVD),在形成薄膜时会输入载流气体(carriergas),再利用载流气体将反应源材料的饱和蒸气带往反应腔,让反应源材料在被加热的基板表面进行反应。进入反应腔的气体原子先吸附在基板上,在基板表面彼此相互碰撞结合成原子团,逐渐累积变大之后形成所谓的核岛。核岛的大小因气体原子沉积量的增加而增加,核岛间的缝隙也随沉积的进行被填满形成薄膜。利用这种方式在基板表面沉积形成的薄膜,在各种不同表面粗糙度的基板上依然具有良好的附着力。不论基板的表面具有凹槽、突起或是图形等图案化结构,只要适度调整薄膜沉积的各种温度、反应气体成分或反应时间就能形成所需要的薄膜。
薄膜沉积的反应是于反应器中进行,如图1所示,反应器100的腔体内包括了承载体4以及加热器6,也有部分的设计会在腔体内加入降温装置以控制腔体内的反应温度。当MOCVD的反应进行时,混合有反应源材料的气体通入反应器100,在基板2表面上形成薄膜,其中基板2是通过承载体4以热传导和辐射热的方式被加热,而承载体4的结构如图2所示由核心层8与包覆层10组成。
根据以上所述,由于薄膜是由反应气体的原子沉积在基板2上,因此基板2的温度及腔体内部的温度为影响薄膜品质的重要关键。为了要加热基板到适合薄膜形成的温度,腔体内是以耐高温且不与反应气体产生反应的材料制成,以避免在反应过程中腔体因为温度过高而毁损,或者发生腔体内部与通入的气体发生反应造成薄膜品质变异的状况。然而承载体的耐用程度也会影响企业生产的成本。由于放置基板的承载体在使用过程中,表面会有破损的情形而连带影响薄膜的品质,因此必须通过更换承载体来解决。
发明内容
为解决上述问题,本发明提供一种反应器,包含承载体以及加热承载体的加热装置,其中的承载体包含第一承载体以及形成于第一承载体之上的第二承载体,并且第一承载体电磁波加热系数大于第二承载体的电磁波加热系数。
附图说明
图1所示为常见的反应器;
图2所示为常见的承载体;
图3所示为本发明所公开的反应器的一实施例;
图4所示为本发明所公开的第二承载体的一实施例;
图5所示为本发明所公开的反应器的另一实施例。
主要元件符号说明
2 基板
4 承载体
6 加热器
8 核心层
10 包覆层
22 基板
24 第二承载体
26 加热器
28 第一承载体
240 表面
242 凹槽
30 核心层
32 包覆层
16 孔隙
34 支柱
36 气孔
100、200、300 反应器
具体实施方式
本发明是公开一反应器200,其包含承载体以及加热装置。如图3所示,其中承载体具有一表面240包含多个凹槽242用以承载基板22,还包含第一承载体28以及位于第一承载体28之上的第二承载体24,其中第二承载体24的导热系数大于第一承载体28。将混有反应源材料饱和蒸气的载流气体通入反应器200,而加热器26也同时加热承载体,当温度到达一预定温度后,气体原子开始沉积在基板22上,并形成薄膜。在一实施例中,反应器200是用于气相沉积,其中气相沉积可为金属有机化学气相沉积(MOCVD)。在一实施例中,加热器26是一种电磁波加热装置,包含一电磁波产生元件可发出特定频率范围的电磁波并在承载体上形成涡电流,涡电流在承载体的表面流动时经过电阻发生损耗而产生热,再通过产生的热对放置在承载体上的基板加热。在一实施例中,第一承载体28可以直接通过接收电磁波在承载体表面形成涡电流,当涡电流流经承载体表面的电阻可产生热能而升温,第二承载体24由于接收电磁波后无法在表面产生涡电流而升温,仅能通过第一承载体28以辐射热与热传导的方式加热。在另一实施例中,第一承载体28与第二承载体24都可以吸收加热器26所发出的电磁波而升温。其中承载体吸收加热器所发出的电磁波造成承载体本身温度上升的效果可以通过电磁波加热系数来衡量,电磁波加热系数是通过量测单位质量的物体在预定频率范围电磁波的照射下,经过一定时间后单位质量的物体所增加的温度;而在一实施例中,第一承载体28具有比第二承载体24较大的电磁波加热系数,亦即是第一承载体28在预定频率范围的电磁波照射下,经过一预定时间后所上升的温度比具有相同质量的第二承载体24在相同条件下所增加的温度较大。在一实施例中,加热器26中的电磁波产生元件可发出频率范围位于甚低频(Very Low Frequency;VLF)的电磁波,其中甚低频的频率范围是介于3KHz~30KHz;而在一较佳实施例中,加热器26是发出介于15KHz~20KHz频率的电磁波。
如前所述,反应过程中腔体内的温度以及基板上的温度会影响薄膜沉积的品质,因此在承载体的设计上,除了要配合加热器26发出的电磁波选择能接收相对频率范围而升温的材料,承载体本身的导热性也会影响表面温度的均匀程度,进而影响基板上薄膜沉积的均匀性。因此,在一实施例中,选择比第一承载体28导热系数大的材料制作第二承载体24,让第二承载体24与基板22接触的表面有较均匀的温度分布,其中第二承载体24整体由同一成分组成,例如SiC。此外,为了加热效率的考虑,第一承载体28以及第二承载体24的材料较佳地皆选择导热系数大于100W/mK的材质以达到较快升温的目的。于一实施例中,第二承载体24由核心层30及包覆着核心层30的包覆层32组成,如图4所示,以具有导热系数较第一承载体28大的材料作为包覆层32,使得第二承载体24具有较第一承载体28大的导热系数,使基板22表面的温度均匀分布。在一实施例中,第一承载体28的材料可以吸收加热器发出的电磁波而升温,这些材料包含石墨、陶瓷或其组合例如包含以石墨为主体并于其上涂布一碳化硅(SiC)薄层;而第二承载体24的核心层30包含石墨、BN、Mo、TiW或其组合,而包覆层32为SiC,通过调整包覆层32与核心层30的比例使得第二承载体24的导热系数大于第一承载体28。在另一实施例中,第二承载体24的核心层30包含可以吸收电磁波的材料,与第一承载体28相同可以吸收电磁波以加热,因此可以更快加热位于第二承载体24上的基板22。
在一实施例中,第二承载体24的导热系数大于第一承载体28,并且第一承载体28的电磁波加热系数大于第二承载体24,例如以石墨作为第一承载体28以及SiC作为第二承载体24。
如图5所示,在另一个实施例中反应器300包含加热器26、第一承载体28、多个第二承载体24与位于第一承载体28和多个第二承载体24之间的支柱34。基板22放置位于第二承载体24表面240上的凹槽242内,而第一承载体28还包含支柱34以支撑第二承载体24。当进行薄膜沉积制作工艺时,加热器26开始运作,而气体会由位于第一承载体28一侧的气孔36流入第一承载体28内的孔隙16,其中通入第一承载体28内的气体为氮气与氢气的混合气体。在一实施例中,加热器26直接加热第一承载体28,而第一承载体28再将吸收到的辐射热通过传导或者对流等方式加热多个第二承载体24。由于第二承载体24的导热系数较第一承载体28大并且表面积较小,使得第二承载体24的表面240在经过加热后温度分布较为均匀,让直接接触第二承载体24的基板22可以被均匀加热,因此整块基板22上的薄膜可以在一定的温度范围内进行反应,在相同时间内形成厚度均匀的薄膜,避免出现同一块基板22上的薄膜厚度差异过大的情形。在另一实施例中,第一承载体28及多个第二承载体24皆可直接由加热器26加热,使得多个第二承载体24不仅吸收来自第一承载体28的热还可由加热器26加热,可以在更短的时间内达到需要的温度,而第二承载体24具有较大的导热系数以及较小的面积还可以让整个承载体达到均衡的温度,使位于多个第二承载体24之上的多个基板22能够均匀地受热。
本发明所公开的承载体包含第一承载体28以及第二承载体24,其中第二承载体24上具有放置晶片的多个凹槽242,在经过多次薄膜沉积制作工艺后,多次放置以及取出晶片的动作可能会因为晶片碰撞到凹槽242造成损坏。而为了能够顺利放置晶片,第二承载体24上的凹槽242的尺寸通常会略大于晶片的尺寸,因此在多次进行薄膜沉积后,凹槽242内可能也会附着薄膜。这些薄膜或者凹槽的损坏也会造成放置在凹槽242内的晶片倾斜或者突起,连带影响后续薄膜形成的厚度。依本发明所公开的实施例,当薄膜的品质异常来自凹槽242的损坏或凹槽242内的薄膜的堆积时,仅需更换直接与凹槽接触的第二承载体24即可,不须更换整个承载体,可节省成本。
以上所述的实施例仅为说明本发明的技术思想及特点,其目的在使熟习此项技术的人士能够了解本发明的内容并据以实施,当不能以之限定本发明的专利范围,即大凡依本发明所揭示的精神所作的均等变化或修饰,仍应涵盖在本发明的专利范围内。
Claims (10)
1.一种应用于气相沉积的反应器,包含:
承载体;以及
加热装置,以加热该承载体;
其中,该承载体包含第一承载体以及第二承载体形成于该第一承载体之上;
其中,该第一承载体包含与该第二承载体不同的材料。
2.如权利要求1所述的反应器,其中该第二承载体的导热系数大于该第一承载体的导热系数并且该第一承载体的电磁波加热系数大于该第二承载体的电磁波加热系数。
3.如权利要求1所述的反应器,该第二承载体整体由同一成分组成。
4.如权利要求1所述的反应器,其中该加热装置包含一电磁波产生元件以发出一频率介于15~20KHz的电磁波。
5.如权利要求1所述的反应器,其中该第二承载体包含多个凹槽用以承载晶片。
6.如权利要求1所述的反应器,其中该第一承载体还包含一气孔。
7.如权利要求1所述的反应器,其中该反应器还包含多个第二承载体形成于该第一承载体之上。
8.一种应用于气相沉积的反应器的承载装置,包含:
第一承载体以及第二承载体形成于该第一承载体之上;
其中,该第一承载体包含与该第二承载体不同的材料。
9.如权利要求8所述的承载装置,其中该第二承载体的导热系数大于该第一承载体的导热系数,并且该第一承载体的电磁波加热系数大于该第二承载体的电磁波加热系数。
10.如权利要求8所述的承载装置,其中该第二承载体整体由同一成分组成。
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CN201962357U (zh) * | 2010-12-27 | 2011-09-07 | 中芯国际集成电路制造(上海)有限公司 | 化学气相沉积设备 |
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US20120145080A1 (en) * | 2010-12-13 | 2012-06-14 | Youngkyou Park | Substrate support unit, and apparatus and method for depositing thin layer using the same |
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