CN103529081B - 一种多层金属氧化物多孔薄膜纳米气敏材料的制备方法 - Google Patents
一种多层金属氧化物多孔薄膜纳米气敏材料的制备方法 Download PDFInfo
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- CN103529081B CN103529081B CN201310491742.4A CN201310491742A CN103529081B CN 103529081 B CN103529081 B CN 103529081B CN 201310491742 A CN201310491742 A CN 201310491742A CN 103529081 B CN103529081 B CN 103529081B
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- metal oxide
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- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 72
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 72
- 239000012528 membrane Substances 0.000 title claims abstract description 54
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 36
- 230000008569 process Effects 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000001020 plasma etching Methods 0.000 claims abstract description 14
- 238000005289 physical deposition Methods 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 10
- 238000000137 annealing Methods 0.000 claims abstract description 8
- 238000001338 self-assembly Methods 0.000 claims abstract description 8
- 239000004005 microsphere Substances 0.000 claims description 37
- 239000004793 Polystyrene Substances 0.000 claims description 35
- 229920002223 polystyrene Polymers 0.000 claims description 16
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 9
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 8
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 8
- 229940112669 cuprous oxide Drugs 0.000 claims description 8
- 229910003437 indium oxide Inorganic materials 0.000 claims description 8
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 abstract description 21
- 239000000463 material Substances 0.000 abstract description 13
- 238000009413 insulation Methods 0.000 abstract description 7
- 239000002356 single layer Substances 0.000 abstract description 4
- 239000011148 porous material Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 44
- 239000010410 layer Substances 0.000 description 20
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 16
- 239000010408 film Substances 0.000 description 15
- 230000004044 response Effects 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 4
- 239000004408 titanium dioxide Substances 0.000 description 3
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical compound [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical group C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000011806 microball Substances 0.000 description 1
- 229910003455 mixed metal oxide Inorganic materials 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
- G01N27/127—Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/087—Oxides of copper or solid solutions thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Nanotechnology (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
Abstract
Description
Claims (1)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310491742.4A CN103529081B (zh) | 2013-10-21 | 2013-10-21 | 一种多层金属氧化物多孔薄膜纳米气敏材料的制备方法 |
US15/030,893 US9816176B2 (en) | 2013-10-21 | 2014-04-08 | Preparation method for multi-layer metal oxide porous film nano gas-sensitive material |
PCT/CN2014/074881 WO2015058495A1 (zh) | 2013-10-21 | 2014-04-08 | 一种多层金属氧化物多孔薄膜纳米气敏材料的制备方法 |
Applications Claiming Priority (1)
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---|---|---|---|
CN201310491742.4A CN103529081B (zh) | 2013-10-21 | 2013-10-21 | 一种多层金属氧化物多孔薄膜纳米气敏材料的制备方法 |
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Publication Number | Publication Date |
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CN103529081A CN103529081A (zh) | 2014-01-22 |
CN103529081B true CN103529081B (zh) | 2016-02-03 |
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CN201310491742.4A Active CN103529081B (zh) | 2013-10-21 | 2013-10-21 | 一种多层金属氧化物多孔薄膜纳米气敏材料的制备方法 |
Country Status (3)
Country | Link |
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US (1) | US9816176B2 (zh) |
CN (1) | CN103529081B (zh) |
WO (1) | WO2015058495A1 (zh) |
Families Citing this family (24)
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CN103529081B (zh) | 2013-10-21 | 2016-02-03 | 苏州慧闻纳米科技有限公司 | 一种多层金属氧化物多孔薄膜纳米气敏材料的制备方法 |
JP6380899B2 (ja) * | 2014-08-29 | 2018-08-29 | 国立研究開発法人物質・材料研究機構 | 電磁波吸収及び輻射材料及びその製造方法並びに赤外線源 |
CN104614492B (zh) * | 2015-01-22 | 2016-07-06 | 苏州慧闻纳米科技有限公司 | 高灵敏度气体传感器件、制备方法及有毒气体监测系统 |
CN104897727A (zh) * | 2015-05-22 | 2015-09-09 | 兰州大学 | 一种高灵敏度多气体检测的气敏传感器 |
CN105652597B (zh) * | 2016-04-12 | 2022-09-02 | 京东方科技集团股份有限公司 | 一种apr版的制作方法 |
CN109813768A (zh) * | 2017-11-22 | 2019-05-28 | 中国科学院过程工程研究所 | 一种单层多孔气敏膜、其制备方法及用途 |
EP3807002A1 (en) * | 2018-06-14 | 2021-04-21 | Corning Incorporated | Patterned microfluidic devices and methods for manufacturing the same |
WO2020033182A1 (en) * | 2018-08-06 | 2020-02-13 | Corning Incorporated | Patterned microfluidic devices and methods for manufacturing the same |
CN110031512B (zh) * | 2019-04-28 | 2021-09-07 | 湖州师范学院 | 一种单个粒子敏感气体传感器及其制备方法和应用 |
CN110265178A (zh) * | 2019-07-01 | 2019-09-20 | 深圳技术大学 | 一种柔性透明导电膜的制备方法 |
CN110893461B (zh) * | 2019-11-06 | 2021-08-24 | 肇庆市华师大光电产业研究院 | 一种具有三级复合结构的纳米颗粒制备方法 |
CN111017868B (zh) * | 2019-11-21 | 2023-08-22 | 厦门大学 | 一种阵列结构硅基点阵的制备方法及其应用 |
CN111017869B (zh) * | 2019-11-21 | 2023-03-21 | 厦门大学 | 一种硅基网络结构及其制备方法 |
CN111272825B (zh) * | 2020-03-06 | 2022-12-23 | 电子科技大学中山学院 | 一种基于表面等离激元增强的金属氧化物气体传感器 |
CN111272827B (zh) * | 2020-03-06 | 2022-12-23 | 电子科技大学中山学院 | 一种贵金属增强型半导体异质结气体传感器 |
CN111272826B (zh) * | 2020-03-06 | 2022-12-23 | 电子科技大学中山学院 | 一种级联作用型半导体气体传感器 |
CN111807317B (zh) * | 2020-07-03 | 2024-03-19 | 肇庆市华师大光电产业研究院 | 一种用于改良逾渗系统的纳米桥的制备方法及其应用 |
CN112179956B (zh) * | 2020-09-29 | 2021-11-19 | 西安交通大学 | 基于掺铝氧化锌多孔纳米薄膜的mems甲醛传感器的制备方法 |
CN112635687B (zh) * | 2021-01-11 | 2022-03-25 | 福州大学 | 基于自组装亚微米小球的纳米量子点发光二极管及方法 |
CN113415780B (zh) * | 2021-06-18 | 2024-01-30 | 合肥工业大学 | 一种一维有序结构的金属氧化物纳米纤维薄膜材料及其制备方法 |
US11320393B1 (en) | 2021-08-03 | 2022-05-03 | King Abdulaziz University | Gas sensor for detection of toxic gases |
CN113921392B (zh) * | 2021-09-03 | 2022-09-23 | 南京信息工程大学 | 一种基于氧气等离子体蚀刻的ps小球循环刻蚀工艺 |
CN113758976A (zh) * | 2021-09-14 | 2021-12-07 | 北京化工大学 | 一种水滑石基氨气气敏材料的制备及应用 |
CN114214595B (zh) * | 2021-11-04 | 2023-11-28 | 万津实业(赤壁)有限公司 | 在柔性基材上镀氧化物光学膜的方法和光学复合部件 |
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WO1997039159A1 (en) * | 1996-04-12 | 1997-10-23 | The University Of Reading | Coated substrate |
CN1935857A (zh) * | 2006-09-07 | 2007-03-28 | 河北工业大学 | 三维有序单分散大孔材料及其制备方法和功能化方法 |
CN101665902A (zh) * | 2008-09-03 | 2010-03-10 | 中国科学院合肥物质科学研究院 | 镍有序多孔阵列薄膜及其制备方法 |
CN102148429A (zh) * | 2010-02-06 | 2011-08-10 | 清华大学 | 纳米光学天线阵列的制造方法 |
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US5801092A (en) | 1997-09-04 | 1998-09-01 | Ayers; Michael R. | Method of making two-component nanospheres and their use as a low dielectric constant material for semiconductor devices |
CN1180236C (zh) | 2002-02-08 | 2004-12-15 | 武汉理工大学 | 光纤气敏传感检测方法及装置 |
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CN100422730C (zh) | 2005-11-14 | 2008-10-01 | 中国科学院合肥物质科学研究院 | 纳米结构有序多孔薄膜型气敏元件及其制备方法 |
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CN102633230A (zh) * | 2012-04-26 | 2012-08-15 | 厦门大学 | 一种基于纳米球刻蚀技术制备硅纳米柱阵列的方法 |
US10393885B2 (en) * | 2012-06-20 | 2019-08-27 | Battelle Memorial Institute | Gamma radiation stand-off detection, tamper detection, and authentication via resonant meta-material structures |
CN103529081B (zh) | 2013-10-21 | 2016-02-03 | 苏州慧闻纳米科技有限公司 | 一种多层金属氧化物多孔薄膜纳米气敏材料的制备方法 |
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2013
- 2013-10-21 CN CN201310491742.4A patent/CN103529081B/zh active Active
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2014
- 2014-04-08 US US15/030,893 patent/US9816176B2/en active Active
- 2014-04-08 WO PCT/CN2014/074881 patent/WO2015058495A1/zh active Application Filing
Patent Citations (4)
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WO1997039159A1 (en) * | 1996-04-12 | 1997-10-23 | The University Of Reading | Coated substrate |
CN1935857A (zh) * | 2006-09-07 | 2007-03-28 | 河北工业大学 | 三维有序单分散大孔材料及其制备方法和功能化方法 |
CN101665902A (zh) * | 2008-09-03 | 2010-03-10 | 中国科学院合肥物质科学研究院 | 镍有序多孔阵列薄膜及其制备方法 |
CN102148429A (zh) * | 2010-02-06 | 2011-08-10 | 清华大学 | 纳米光学天线阵列的制造方法 |
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CN103529081A (zh) | 2014-01-22 |
US20170152595A1 (en) | 2017-06-01 |
US9816176B2 (en) | 2017-11-14 |
WO2015058495A1 (zh) | 2015-04-30 |
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