CN103500782A - Structure of light emitting diode - Google Patents
Structure of light emitting diode Download PDFInfo
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- CN103500782A CN103500782A CN201310460157.8A CN201310460157A CN103500782A CN 103500782 A CN103500782 A CN 103500782A CN 201310460157 A CN201310460157 A CN 201310460157A CN 103500782 A CN103500782 A CN 103500782A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 203
- 239000000463 material Substances 0.000 claims description 112
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 36
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims description 24
- 229910002601 GaN Inorganic materials 0.000 claims description 17
- 239000002019 doping agent Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 abstract description 82
- 229910052751 metal Inorganic materials 0.000 description 29
- 239000002184 metal Substances 0.000 description 29
- 238000009940 knitting Methods 0.000 description 24
- 238000000034 method Methods 0.000 description 20
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 15
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 14
- 229910052733 gallium Inorganic materials 0.000 description 14
- 230000012010 growth Effects 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 10
- 239000000395 magnesium oxide Substances 0.000 description 10
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 10
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 10
- 229910010271 silicon carbide Inorganic materials 0.000 description 10
- 238000004020 luminiscence type Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000004064 recycling Methods 0.000 description 3
- 230000008676 import Effects 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
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Abstract
The invention discloses a structure of a light emitting diode. The structure comprises an epitaxial substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer, wherein the first n-type semiconductor layer is located on the epitaxial substrate; the n-type three-dimensional electron cloud structure is located on the first n-type semiconductor layer; the second n-type semiconductor layer is located on the n-type three-dimensional electron cloud structure; the active layer is located on the second n-type semiconductor layer; and the first p-type semiconductor layer is located on the active layer.
Description
The application is that application number is 200810008563.X, the applying date to be dividing an application of on January 23rd, 2008, the denomination of invention application for a patent for invention that is " structure of light-emitting diode ".
Technical field
The present invention relates to a kind of structure of light-emitting diode, and be particularly related to a kind of have the three-dimensional electronic cloud structure and (or) structure of the light-emitting diode of three-dimensional hole cloud structure.
Background technology
Light-emitting diode in solid-state light emitting element (Light Emitting Diode; LED) the good photoelectric characteristic such as coloured light that has low power consumption, lower calorific value, operation lifetime length, impact resistance, volume is little, reaction speed is fast and can sends wavelength stabilization, therefore often be applied to the fields such as the indicator light of household electrical appliances, instrument and photovoltaic.Along with the progress of photoelectricity science and technology, solid-state light emitting element is existing significant progress at aspects such as improving luminous efficiency, useful life and brightness, will become in the near future the main flow of following light-emitting component.
The section of structure that Fig. 1 is the light-emitting diode 100 that illustrates according to known method.The known luminescence diode element, comprise substrate 101, is positioned at N-shaped semiconductor layer 102, active layer 103, p-type semiconductor layer 104 and front electrode 105 and the backplate 106 of epitaxial growth on substrate 101.
Wherein, front electrode 105 is positioned on the light-emitting area of light-emitting diode 100, and 106 of backplates are positioned at substrate 101 and do not grow up on the another side of epitaxial structure.Electric current R1 imports p-type semiconductor layer 104 via front electrode 105, and luminous by the active layer 103 that includes double-heterostructure or multi-quantum pit structure.Generally speaking, in order to increase the luminous efficiency of light-emitting diode 100, the electric current of front electrode 105 effectively must be distributed to the edge of diode element 100, to impel active layer 103, can produce equably light.
Because the contact resistance of the semiconductor layer of light-emitting diode 100 and metal electrode is usually too high, electric current R1 effectively can't be dispersed in active layer 103, electric current R1 easily directly passes through active layer 103 with regard to shortest path, flow to backplate 106, and the phenomenon of generation current congested (Current crowding), and make the light-emitting zone of active layer 103 only be confined to the part of the corresponding front electrode 105 of active layer 103, and significantly affect the luminous efficiency of active layer 103.
For head it off, the transparent electrode layer that current known technology forms window layers (Window Layer), current blocked layer or the employing tin indium oxide (ITO) of low-resistance coefficient in the superiors of the epitaxial structure of light-emitting diode 100, use the electric current R1 that front electrode 105 is imported dispersed.Also or the external form that changes front electrode 105 disperses electric current with layout (Layout), with the luminous efficiency of enhancement light-emitting diode 100.
Yet, no matter adopt which kind of method, all need extra processing step, not only increase on foot process costs, also, often because of extra processing step damage LED core, reduce process yield.
Therefore have a kind of technique of needs simple and effectively scattered current with the light-emitting diode of promoting luminous efficiency.
Summary of the invention
One embodiment of the invention provide a kind of structure of light-emitting diode, comprising: epitaxial substrate, N-shaped semiconductor layer, N-shaped three-dimensional electronic cloud structure, the second N-shaped semiconductor layer, active layer and p-type semiconductor layer.The first N-shaped semiconductor layer is positioned on epitaxial substrate, N-shaped three-dimensional electronic cloud structure is positioned on the first N-shaped semiconductor layer, the second N-shaped semiconductor layer is positioned on N-shaped three-dimensional electronic cloud structure, and active layer is positioned on the second N-shaped semiconductor layer, and the p-type semiconductor layer is positioned on active layer.
An embodiment more of the present invention provides a kind of manufacture method of light-emitting diode, comprises the steps: at first to provide epitaxial substrate, forms the first N-shaped semiconductor layer on epitaxial substrate, then forms N-shaped three-dimensional electronic cloud structure on the first N-shaped semiconductor layer.Then, form the second N-shaped semiconductor layer on this N-shaped three-dimensional electronic cloud structure, form active layer on the second N-shaped semiconductor layer, then form the p-type semiconductor layer on this active layer.
Another embodiment of the present invention provides a kind of structure of light-emitting diode, comprising: epitaxial substrate, the first N-shaped semiconductor layer, N-shaped three-dimensional electronic cloud structure, the second N-shaped semiconductor layer, active layer, the first p-type semiconductor layer, the three-dimensional hole of p-type cloud structure, the second p-type semiconductor layer.The first N-shaped semiconductor layer is positioned on epitaxial substrate, N-shaped three-dimensional electronic cloud structure is positioned on the first N-shaped semiconductor layer, the second N-shaped semiconductor layer is positioned on N-shaped three-dimensional electronic cloud structure, active layer is positioned on the second N-shaped semiconductor layer, the first p-type semiconductor layer is positioned on active layer, the three-dimensional hole of p-type cloud structure is positioned on the first p-type semiconductor layer, and the second p-type semiconductor layer is positioned on the cloud structure of the three-dimensional hole of p-type.
Another embodiment again of the present invention provides a kind of manufacture method of light-emitting diode, comprises the steps:
At first epitaxial substrate is provided, forms the first N-shaped semiconductor layer on epitaxial substrate, then form N-shaped three-dimensional electronic cloud structure on the first N-shaped semiconductor layer.Form the second N-shaped semiconductor layer on N-shaped three-dimensional electronic cloud structure, then on the second N-shaped semiconductor layer, form active layer.Form the first p-type semiconductor layer on active layer, then on the first p-type semiconductor layer, form the three-dimensional hole of p-type cloud structure, and form the second p-type semiconductor layer on the cloud structure of the three-dimensional hole of p-type.
Another embodiment of the present invention provides a kind of structure of light-emitting diode, comprising: epitaxial substrate, N-shaped semiconductor layer, active layer, the first p-type semiconductor layer, the three-dimensional hole cloud structure of p-type and the second p-type semiconductor layer.On the epitaxial substrate of N-shaped semiconductor layer position, active layer is positioned on the N-shaped semiconductor layer, and the first p-type semiconductor layer is positioned on active layer, and the three-dimensional hole of p-type cloud structure is positioned on the first p-type semiconductor layer, and the second p-type semiconductor layer is positioned on the cloud structure of the three-dimensional hole of p-type.
An embodiment more of the present invention provides a kind of manufacture method of light-emitting diode, comprises the steps: at first to provide epitaxial substrate, then forms the N-shaped semiconductor layer on epitaxial substrate.Form active layer on the N-shaped semiconductor layer, then on active layer, form the first p-type semiconductor layer, form the three-dimensional hole of p-type cloud structure on the first p-type semiconductor layer, then on the cloud structure of the three-dimensional hole of p-type, form the second p-type semiconductor layer.
Another embodiment of the present invention provides a kind of structure of light-emitting diode, comprising: permanent substrate, knitting layer, reflector, the second p-type semiconductor layer, the three-dimensional hole of p-type cloud structure, the first p-type semiconductor layer, active layer and N-shaped semiconductor layer.Wherein, knitting layer is positioned on permanent substrate, and reflector is positioned on knitting layer, and the second p-type semiconductor layer is positioned on reflector, and the three-dimensional hole of p-type cloud structure is positioned on the second p-type semiconductor layer, and the first p-type semiconductor layer is positioned on the cloud structure of the three-dimensional hole of p-type.Active layer is positioned on the first p-type semiconductor layer, and the N-shaped semiconductor layer is positioned on active layer.
Another embodiment of the present invention provides a kind of manufacture method of light-emitting diode, comprises the steps: at first to provide epitaxial substrate.Form the N-shaped semiconductor layer on epitaxial substrate, form active layer on the N-shaped semiconductor layer, form the first p-type semiconductor layer on active layer, in the first p-type semiconductor layer, form the three-dimensional hole of p-type cloud structure, on the cloud structure of the three-dimensional hole of p-type, form the second p-type semiconductor layer, then, form on ，Yu reflector, reflector and form knitting layer on the second p-type semiconductor layer, then permanent substrate is provided, utilize knitting layer that permanent substrate is combined with reflector, and remove epitaxial substrate.
Another embodiment of the present invention provides a kind of structure of light-emitting diode, comprising: permanent substrate, knitting layer, reflector, the second p-type semiconductor layer, the three-dimensional hole of p-type cloud structure, the first p-type semiconductor layer, active layer, the second N-shaped semiconductor layer, N-shaped three-dimensional electronic cloud structure and the first N-shaped semiconductor layer.Wherein, knitting layer is positioned on permanent substrate, reflector is positioned on knitting layer, the second p-type semiconductor layer is positioned on reflector, and the three-dimensional hole of p-type cloud structure is positioned on the second p-type semiconductor layer, and the first p-type semiconductor is positioned on the cloud structure of the three-dimensional hole of p-type, active layer is positioned on the first p-type semiconductor, the second N-shaped semiconductor layer is positioned on active layer, and N-shaped three-dimensional electronic cloud structure is positioned at the second N-shaped semiconductor layer, and the first N-shaped semiconductor layer is positioned on N-shaped three-dimensional electronic cloud structure.
An embodiment more of the present invention provides a kind of manufacture method of light-emitting diode, comprise the steps: at first to provide epitaxial substrate, form again the first N-shaped semiconductor layer on epitaxial substrate, form N-shaped three-dimensional electronic cloud structure on the first N-shaped semiconductor layer, form the second N-shaped semiconductor layer on N-shaped three-dimensional electronic cloud structure, form active layer on the second N-shaped semiconductor layer, form the first p-type semiconductor layer on active layer, form the three-dimensional hole of p-type cloud structure on the first p-type semiconductor layer, form the second p-type semiconductor layer on the cloud structure of the three-dimensional hole of p-type, then on the second p-type semiconductor layer, form reflector, form knitting layer on reflector, permanent substrate is provided again, utilize knitting layer that permanent substrate is combined with reflector, and remove epitaxial substrate.
Another embodiment of the present invention provides a kind of structure of light-emitting diode, comprising: permanent substrate, knitting layer, reflector, p-type semiconductor layer, active layer, the second N-shaped semiconductor layer, N-shaped three-dimensional electronic cloud structure and the first N-shaped semiconductor layer.Wherein, knitting layer is positioned on permanent substrate, reflector is positioned on knitting layer, the p-type semiconductor layer is positioned on reflector, active layer is positioned on the p-type semiconductor layer, the second N-shaped semiconductor layer is positioned on active layer, and N-shaped three-dimensional electronic cloud structure is positioned on the second N-shaped semiconductor layer, and the first N-shaped semiconductor layer is positioned on N-shaped three-dimensional electronic cloud structure.
Another embodiment more of the present invention provides a kind of manufacture method of light-emitting diode, comprise the steps: at first to provide epitaxial substrate, form the first N-shaped semiconductor layer on epitaxial substrate, form N-shaped three-dimensional electronic cloud structure on the first N-shaped semiconductor layer, then form the second N-shaped semiconductor layer on N-shaped three-dimensional electronic cloud structure.Form active layer on the second N-shaped semiconductor layer, form the p-type semiconductor layer on active layer, on the p-type semiconductor layer, form reflector, form knitting layer on reflector, permanent substrate then is provided, and the recycling knitting layer combines permanent substrate with reflector, then remove this epitaxial substrate.
According to above-described embodiment, feature of the present invention is in the p-type of light-emitting diode or N-shaped semiconductor layer, forms the three-dimensional hole cloud of p-type or a N-shaped three-dimensional electronic cloud structure that includes at least one wide gap material layer and a narrow gap material layer.Because wide gap material layer and narrow gap material layer are formed by three or five group-III nitrides, it has the characteristic of high carrier mobility and high carrier concentration, the electric current that can effectively front electrode be imported disperses among the active layer of light-emitting diode fifty-fifty, to solve the congested problem of known luminescence diode element electric current.Use the technology of the present invention feature, there is the luminous efficiency that technique is simple and promote light-emitting diode.
The accompanying drawing explanation
According to above-described preferred embodiment, and coordinate the accompanying drawing explanation, the reader is when more deep understanding being arranged to purpose of the present invention, feature and advantage.But it should be noted that for for the purpose of clear the description, this specification appended graphic not proportionally chi illustrated.
Brief description of drawingsfig is as follows:
The section of structure that Fig. 1 is the LED core 100 that illustrates according to known method.
The section of structure that Fig. 2 A is a kind of light-emitting diode 200 of illustrating according to first preferred embodiment of the invention.
The section of structure that Fig. 2 B is a kind of light-emitting diode 200 ' of illustrating according to second preferred embodiment of the invention.
The section of structure that Fig. 3 is a kind of light-emitting diode 300 of illustrating according to third preferred embodiment of the invention.
The process structure profile that Fig. 4 A to Fig. 4 C is a kind of light-emitting diode 500 of illustrating according to four preferred embodiment of the invention.
The process structure profile that Fig. 5 A to Fig. 5 C is a kind of light-emitting diode 500 of illustrating according to fifth preferred embodiment of the invention.
The process structure profile that Fig. 6 A to Fig. 6 C is a kind of light-emitting diode 600 of illustrating according to sixth preferred embodiment of the invention.
Fig. 7 A is the CURRENT DISTRIBUTION image top view that illustrates a kind of known luminescence diode element.
Fig. 7 B is the CURRENT DISTRIBUTION image top view that illustrates light-emitting diode of the present invention.
Description of reference numerals
100: light-emitting diode 101: substrate
102:n type semiconductor layer 103: active layer
104:p type semiconductor layer 105: front electrode
106: backplate 200: light-emitting diode
200 ': light-emitting diode 201: epitaxial substrate
202: the first N-shaped semiconductor layer 203:n type three-dimensional electronic cloud structures
203a: wide gap material layer 203b: narrow gap material layer
204: the second N-shaped semiconductor layers 205: active layer
The three-dimensional hole of 206:p type semiconductor layer 207:p type cloud structure
207a: wide gap material layer 207b: narrow gap material layer
209: the first metal electrodes of 208:p type semiconductor layer
Within 210: the second, metal electrode 300: light-emitting diode
301: 302: the first p-type semiconductor layers of epitaxial substrate
The three-dimensional hole cloud structure 303a of 303:p type: wide gap material layer
303b: 304: the second p-type semiconductor layer of narrow gap material layer
305: active layer 306:n type semiconductor layer
308: the second metal electrodes of 307: the first metal electrodes
400: light-emitting diode 401: epitaxial substrate
402: the first N-shaped semiconductor layer 403:n type three-dimensional electronic cloud structures
403a: wide gap material layer 403b: narrow gap material layer
404: the second N-shaped semiconductor layers 405: active layer
406: the first three-dimensional hole of p-type semiconductor layer 407:p type cloud structures
407a: wide gap material layer 407b: narrow gap material layer
408: the second p-type semiconductor layers 409: reflector
410: knitting layer 411: permanent substrate
412: metal electrode 500: light-emitting diode
501: 502: the first N-shaped semiconductor layers of epitaxial substrate
503:n type three-dimensional electronic cloud structure 503a: wide gap material layer
503b: 504: the second N-shaped semiconductor layer of narrow gap material layer
505: active layer 506:p type semiconductor layer
507: reflector 508: knitting layer
509: permanent substrate 510: metal electrode
600: light-emitting diode 601: epitaxial substrate
602:n type semiconductor layer 605: active layer
606: the first three-dimensional hole of p-type semiconductor layer 607:p type cloud structures
607a: wide gap material layer 607b: narrow gap material layer
608: the second p-type semiconductor layers 609: reflector
610: knitting layer 611: permanent substrate
612: metal electrode R6: electric current
R1: electric current R2: electric current
R2 ': electric current R3: electric current
R4: electric current R4 ': electric current
R5: electric current
Embodiment
For purpose of the present invention, feature and advantage can be become apparent, especially exemplified by several light-emitting diodes, as preferred embodiment, details are as follows.
Please refer to Fig. 2 A and Fig. 2 B, the section of structure that Fig. 2 A is a kind of light-emitting diode 200 of illustrating according to first preferred embodiment of the invention.The section of structure that Fig. 2 B is a kind of light-emitting diode 200 ' of illustrating according to second preferred embodiment of the invention.
At first epitaxial substrate 201 is provided, in a preferred embodiment of the invention, the material of epitaxial substrate 201 can be the material that aluminium oxide (sapphire), carborundum (SiC), silicon (Si), zinc oxide (ZnO), magnesium oxide (MgO), aluminium nitride (AlN), gallium nitride (GaN) or above-mentioned combination in any form.
Then, utilize the Metalorganic chemical vapor deposition technology, form the first N-shaped semiconductor layer 202 on epitaxial substrate 201.Wherein, the material preferred embodiment of the first N-shaped semiconductor layer 202 is N-shaped aluminum indium nitride gallium (AlGaInN) or N-shaped gallium nitride (GaN).
Form again N-shaped three-dimensional electronic cloud structure 203 on the first N-shaped semiconductor layer 202.In an embodiment of the present invention, N-shaped three-dimensional electronic cloud structure 203 is a kind of material different from N-shaped semiconductor layer 202, and for thering is single heterojunction structure, double-heterostructure or the sandwich construction of different energy gaps.
Wherein, N-shaped three-dimensional electronic cloud structure 203 comprises wide gap material layer 203a and narrow gap material layer 203b, and among wide gap material layer 203a and narrow gap material layer 203b at least one doped with the N-shaped dopant.Preferably N-shaped three-dimensional electronic cloud structure, for example be, by two heterogeneous N-shaped aluminum indium gallium nitride layers, N-shaped Al
xin
yga
1-x-yn (0<x<1,0<y<1) layer and N-shaped Al
ain
bga
1-a-bn (0<a<1,0<b<1) layer, a kind of double-heterostructure formed.N-shaped Al wherein
xin
yga
1-x-ythe energy gap of N layer is greater than N-shaped Al
ain
bga
1-a-bthe energy gap of N layer.In the present embodiment, N-shaped Al
xin
yga
1-x-ythe wide gap material layer of N and N-shaped Al
ain
bga
1-a-bthe thickness of the narrow gap material layer of N is respectively between between 1nm to 1000nm.
And then form the second N-shaped semiconductor layer 204 on N-shaped three-dimensional electronic cloud structure.In a preferred embodiment of the invention, the material of the second N-shaped semiconductor layer 204 is identical with the material essence that the first N-shaped semiconductor layer 202 is used.
Then, on the second N-shaped semiconductor layer 204, epitaxial growth active layer 205, wherein Multiple Quantum Well (MQW) structure of active layer 205 preferred embodiments for being formed by aluminum indium nitride gallium (AlGaInN) or gallium nitride (GaN).And epitaxial growth the first p-type semiconductor layer 206 on active layer 205.Form again afterwards the first metal electrode 209 on the first p-type semiconductor layer 206, and form the second metal electrode 210 in the do not grow up another side of epitaxial structure of epitaxial substrate 201, to complete the making of light-emitting diode 200.
In addition in some embodiments of the invention, light-emitting diode 200 also comprises the three-dimensional hole of p-type cloud structure 207 and the second p-type semiconductor layer 208 be positioned on the first p-type semiconductor layer 206.Please refer to the light-emitting diode 200 ' of Fig. 2 B, the light-emitting diode 200 that its structure and Fig. 2 A illustrate is roughly the same, difference only is that light-emitting diode 200 ' has more the three-dimensional hole of p-type cloud structure 207 and is formed on the first p-type semiconductor layer 206, and the second p-type semiconductor layer 208 is formed on the three-dimensional hole of p-type cloud structure 207.And the first metal electrode 209 is formed on the second p-type semiconductor layer 208, the second 210 of metal electrodes are formed at the do not grow up another side of epitaxial structure of epitaxial substrate 201.
Wherein, in an embodiment of the present invention, the three-dimensional hole of p-type cloud structure 207 is a kind of material different from the first p-type semiconductor layer 206, and for thering is single heterojunction structure, double-heterostructure or the sandwich construction of different energy gaps.Wherein, the three-dimensional hole of p-type cloud structure 207 comprises wide gap material layer 207a and narrow gap material layer 207b, and among wide gap material layer 207a and narrow gap material layer 207b at least one doped with the p-type dopant.Preferably the three-dimensional hole of p-type cloud structure, for example be, by two p-type aluminum indium gallium nitride layers, p-type Al
xin
yga
1-x-yn (0<x<1,0<y<1) layer and p-type Al
ain
bga
1-a-ba kind of double-heterostructure that N (0<a<1,0<b<1) forms.P-type Al wherein
xin
yga
1-x-ythe energy gap of N layer is greater than p-type Al
ain
bga
1-a-bthe energy gap of N layer.In the present embodiment, p-type Al
xin
yga
1-x-ythe wide gap material layer of N and p-type Al
ain
bga
1-a-bthe thickness of the narrow gap material layer of N is respectively between between 1nm to 1000nm
Because the N-shaped electron cloud structure in light-emitting diode 200 and 200 ' or p-type hole cloud structure all have the heterojunction structure of a plurality of different energy gaps, can make the interface band curvature (Band Bending) of wide gap material layer/narrow gap material layer, and produce the phenomenon that the charge carrier energy level quantizes.Utilize this can make light-emitting diode have the characteristic of high carrier mobility and high carrier concentration, the electric current R2 or the electric current R2 ' that can be effectively the first metal electrode 209 or the second metal electrode 210 be imported disperse among the active layer of light-emitting diode fifty-fifty.
The section of structure that Fig. 3 is a kind of light-emitting diode 300 of illustrating according to third preferred embodiment of the invention.At first epitaxial substrate 301 is provided, in a preferred embodiment of the invention, the material of epitaxial substrate 301 can be the material that aluminium oxide (sapphire), carborundum (SiC), silicon (Si), zinc oxide (ZnO), magnesium oxide (MgO), aluminium nitride (AlN), gallium nitride (GaN) or above-mentioned combination in any form.Then, recycling Metalorganic chemical vapor deposition technology forms N-shaped semiconductor layer 306 on epitaxial substrate 301, and the material of N-shaped semiconductor layer 306 is preferably N-shaped aluminum indium nitride gallium (AlGaInN) or N-shaped gallium nitride (GaN).Epitaxial growth active layer 305 on N-shaped semiconductor layer 306 again, wherein Multiple Quantum Well (MQW) structure of active layer 305 preferred embodiments for being formed by aluminum indium nitride gallium (AlGaInN) or gallium nitride (GaN) afterwards.Then, in active layer 305 epitaxial growths
theone p-type semiconductor layer 302.Wherein, the material of the first p-type semiconductor layer 302 is preferably p-type aluminum indium nitride gallium (AlGaInN) or p-type gallium nitride (GaN).
Form again the three-dimensional hole of p-type cloud structure 303 on the first p-type semiconductor layer 302.In the present embodiment, the three-dimensional hole of p-type cloud structure 303 is a kind of material different from p-type semiconductor layer 302, and for thering is single heterojunction structure, double-heterostructure or the sandwich construction of different energy gaps.Wherein, the three-dimensional hole of p-type cloud structure 303 comprises wide gap material layer 303a and narrow gap material layer 303b, and among wide gap material layer 303a and narrow gap material layer 303b at least one doped with the p-type dopant.Preferably p-type three-dimensional electronic cloud structure, be by p-type aluminum indium gallium nitride (Al
xin
yga
1-x-yn/Al
ain
bga
1-a-ba kind of double-heterostructure that N (0<x<1,0<y<1,0<a<1,0<b<1) forms, wherein p-type Al
xin
yga
1-x-ythe energy gap of N is greater than p-type Al
ain
bga
1-a-bthe energy gap of N.In the present embodiment, p-type Al
xin
yga
1-x-ythe wide gap material layer of N and p-type Al
ain
bga
1-a-bthe thickness of the narrow gap material layer of N is respectively between between 1nm to 1000nm.
Then, form the second p-type semiconductor layer 304 on the three-dimensional hole of p-type cloud structure 303.In a preferred embodiment of the invention, the material of the second p-type semiconductor layer 304 is identical with the material essence that the first p-type semiconductor layer 302 is used.
Form again the first metal electrode 307 on the second p-type semiconductor layer 304, and form the second metal electrode 308 in the do not grow up another side of epitaxial structure of epitaxial substrate 301, to complete the making of light-emitting diode 300.
Because p-type hole cloud structure 303 has the heterojunction structure of a plurality of different energy gaps, can make the interface band curvature of wide gap material layer/narrow gap material layer, and produce the phenomenon that the charge carrier energy level quantizes.Utilize this can make light-emitting diode have the characteristic of high carrier mobility and high carrier concentration, the electric current R3 that metal electrode 308 can be imported disperses among the active layer of light-emitting diode fifty-fifty.
The process structure profile that Fig. 4 A to Fig. 4 C is a kind of light-emitting diode 400 of illustrating according to four preferred embodiment of the invention.Please refer to Fig. 4 A, at first epitaxial substrate 401 is provided, in a preferred embodiment of the invention, the material of epitaxial substrate 401 can be the material that aluminium oxide (sapphire), carborundum (SiC), silicon (Si), zinc oxide (ZnO), magnesium oxide (MgO), aluminium nitride (AlN), gallium nitride (GaN) or above-mentioned combination in any form.Then, utilize the Metalorganic chemical vapor deposition technology, form the first N-shaped semiconductor layer 402 on epitaxial substrate 401.Wherein, the material of the first N-shaped semiconductor layer 402 is preferably N-shaped aluminum indium nitride gallium (AlGaInN) or N-shaped gallium nitride (GaN).
Form again N-shaped three-dimensional electronic cloud structure 403 on the first N-shaped semiconductor layer 402.In the present embodiment, N-shaped three-dimensional electronic cloud structure 403 is a kind of material different from the first N-shaped semiconductor layer 402, and for thering is single heterojunction structure, double-heterostructure or the sandwich construction of different energy gaps.Wherein, N-shaped three-dimensional electronic cloud structure 403 comprises wide gap material layer 403a and narrow gap material layer 403b, and among wide gap material layer 403a and narrow gap material layer 403b at least one doped with the N-shaped dopant.Preferably N-shaped three-dimensional electronic cloud structure, be by N-shaped aluminum indium gallium nitride Al
xin
yga
1-x-yn/Al
ain
bga
1-a-ba kind of double-heterostructure that N (0<x<1,0<y<1,0<a<1,0<b<1) forms, wherein N-shaped Al
xin
yga
1-x-ythe energy gap of N is greater than N-shaped Al
ain
bga
1-a-bthe energy gap of N.In the present embodiment, N-shaped Al
xin
yga
1-x-ythe wide gap material layer of N and N-shaped Al
ain
bga
1-a-bthe thickness of the narrow gap material layer of N is respectively between between 1nm to 1000nm.
Then, form the second N-shaped semiconductor layer 404 on N-shaped three-dimensional electronic cloud structure.In a preferred embodiment of the invention, the material of the second N-shaped semiconductor layer 404 is identical with the material essence that the first N-shaped semiconductor layer 402 is used.Then, on the second N-shaped semiconductor layer 404, epitaxial growth active layer 405, wherein Multiple Quantum Well (MQW) structure of active layer 405 preferred embodiments for being formed by aluminum indium nitride gallium (AlGaInN) or gallium nitride (GaN).And epitaxial growth the first p-type semiconductor layer 406 on active layer 405.Form the three-dimensional hole of p-type cloud structure 407 on the first p-type semiconductor layer 406.Form the second p-type semiconductor layer 408 again on the three-dimensional hole of p-type cloud structure 407.
Wherein, preferably the three-dimensional hole of p-type cloud structure 407, be by p-type aluminum indium gallium nitride Al
xin
yga
1-x-yn/Al
ain
bga
1-a-ba kind of double-heterostructure that N (0<x<1,0<y<1,0<a<1,0<b<1) forms, wherein p-type Al
xin
yga
1-x-ythe energy gap of N is greater than p-type Al
ain
bga
1-a-bthe energy gap of N.In the present embodiment, p-type Al
xin
yga
1-x-yn wide gap material layer 407a and p-type Al
ain
bga
1-a-bthe thickness of the narrow gap material layer of N 407b is respectively between between 1nm to 1000nm.And the first p-type semiconductor layer 406 is preferably p-type aluminum indium nitride gallium (AlGaInN) or p-type gallium nitride (GaN).The material of the second p-type semiconductor layer 408 is identical with the material essence that the first p-type semiconductor layer 406 is used.
Referring again to Fig. 4 B, form reflector 409 on the second p-type semiconductor layer 408.Form knitting layer 410 on reflector 409.Permanent substrate 411 is provided again, utilizes knitting layer 410 that permanent substrate 411 is combined with reflector 409.In the present embodiment, permanent substrate 411 is metal substrate, also can be used as the metal electrode of light-emitting diode 400.
Follow-up Fig. 4 C that please refer to after removing epitaxial substrate 401, forms another metal electrode 412, to complete the making of light-emitting diode 400 on the first N-shaped semiconductor layer 402.
Because the three-dimensional hole of N-shaped three-dimensional electronic cloud structure 403 and p-type cloud structure 407 has the heterojunction structure of a plurality of different energy gaps, can make the interface band curvature of wide gap material layer/narrow gap material layer, and produce the phenomenon that the charge carrier energy level quantizes.Utilize this can make light-emitting diode have the characteristic of high carrier mobility and high carrier concentration, electric current R4 or the R4 ' that permanent substrate 411 or metal electrode 412 can be imported disperse among the active layer of light-emitting diode fifty-fifty.
Please refer to Fig. 5 A to Fig. 5 C, the process structure profile that Fig. 5 A to Fig. 5 C is a kind of light-emitting diode 500 of illustrating according to fifth preferred embodiment of the invention.Please refer to Fig. 5 A, at first epitaxial substrate 501 is provided, in a preferred embodiment of the invention, the material of epitaxial substrate 501 can be the material that aluminium oxide (sapphire), carborundum (SiC), silicon (Si), zinc oxide (ZnO), magnesium oxide (MgO), aluminium nitride (AlN), gallium nitride (GaN) or above-mentioned combination in any form.Then, recycling Metalorganic chemical vapor deposition technology forms the first N-shaped semiconductor layer 502 on epitaxial substrate 501.Wherein, the material of the first N-shaped semiconductor layer 502 is preferably N-shaped aluminum indium nitride gallium (AlGaInN) or N-shaped gallium nitride (GaN).
Form N-shaped three-dimensional electronic cloud structure 503 on the first N-shaped semiconductor layer 502.In an embodiment of the present invention, N-shaped three-dimensional electronic cloud structure 503 is a kind of material different from the first N-shaped semiconductor layer 502, and for thering is single heterojunction structure, double-heterostructure or the sandwich construction of different energy gaps.Wherein, N-shaped three-dimensional electronic cloud structure 503 comprises wide gap material layer 503a and narrow gap material layer 503b, and among wide gap material layer 503a and narrow gap material layer 503b at least one doped with the N-shaped dopant.Preferably N-shaped three-dimensional electronic cloud structure, be by N-shaped aluminum indium gallium nitride Al
xin
yga
1-x-yn/Al
ain
bga
1-a-ba kind of double-heterostructure that N (0<x<1,0<y<1,0<a<1,0<b<1) forms, wherein N-shaped Al
xin
yga
1-x-ythe energy gap of N is greater than N-shaped Al
ain
bga
1-a-bthe energy gap of N.In the present embodiment, N-shaped Al
xin
yga
1-x-ythe wide gap material layer of N and N-shaped Al
ain
bga
1-a-bthe thickness of the narrow gap material layer of N is respectively between between 1nm to 1000nm.
Then, form the second N-shaped semiconductor layer 504 on N-shaped three-dimensional electronic cloud structure 503.In a preferred embodiment of the invention, the material of the second N-shaped semiconductor layer 504 is identical with the material essence that the first N-shaped semiconductor layer 502 is used.Then, epitaxial growth active layer 505 on the second N-shaped semiconductor layer 504.Wherein active layer 505 preferred embodiments are Multiple Quantum Well (MQW) structure be comprised of aluminum indium nitride gallium (AlGaInN) or gallium nitride (GaN).And epitaxial growth p-type semiconductor layer 506 on active layer 505.And the material of p-type semiconductor layer 506 is preferably p-type aluminum indium nitride gallium (AlGaInN) or p-type gallium nitride (GaN).
With reference to Fig. 5 B, form reflector 507 on p-type semiconductor layer 506.Form knitting layer 508 on reflector 507.Permanent substrate 509 is provided again, utilizes knitting layer 508 that permanent substrate 509 is combined with reflector 507.In the present embodiment, permanent substrate 509 is metal substrate, also can be used as the metal electrode of light-emitting diode 500.
Please refer to Fig. 5 C, after removing epitaxial substrate 501, form another metal electrode 510 on N-shaped semiconductor layer 502, to complete the making of light-emitting diode 500.
Because N-shaped three-dimensional electronic cloud structure 503 has the heterojunction structure of a plurality of different energy gaps, can make the interface band curvature of wide gap material layer/narrow gap material layer, and produce the phenomenon that the charge carrier energy level quantizes.Utilize this characteristic can make light-emitting diode have the characteristic of high carrier mobility and high carrier concentration, the electric current R5 that metal electrode 510 can be imported disperses among the active layer of light-emitting diode fifty-fifty.
Please refer to Fig. 6 A to Fig. 6 C, the process structure profile that Fig. 6 A to Fig. 6 C is a kind of light-emitting diode 600 of illustrating according to four preferred embodiment of the invention.Please refer to Fig. 6 A, at first epitaxial substrate 601 is provided, in a preferred embodiment of the invention, the material of epitaxial substrate 601 can be the material that aluminium oxide (sapphire), carborundum (SiC), silicon (Si), zinc oxide (ZnO), magnesium oxide (MgO), aluminium nitride (AlN), gallium nitride (GaN) or above-mentioned combination in any form.Then, utilize the Metalorganic chemical vapor deposition technology, form N-shaped semiconductor layer 602 on epitaxial substrate 601.Wherein, the material of N-shaped semiconductor layer 602 is preferably N-shaped aluminum indium nitride gallium (AlGaInN) or N-shaped gallium nitride (GaN).Epitaxial growth active layer 605 on N-shaped semiconductor layer 602 again, wherein active layer 605 is preferably Multiple Quantum Well (MQW) structure be comprised of aluminum indium nitride gallium (AlGaInN) or gallium nitride (GaN).
Then, epitaxial growth the first p-type semiconductor layer 606 on active layer 605.Form the three-dimensional hole of p-type cloud structure 607 on the first p-type semiconductor layer 606.Form the second p-type semiconductor layer 608 again on the three-dimensional hole of p-type cloud structure 607.Wherein, preferably the three-dimensional hole of p-type cloud structure 607, be by p-type aluminum indium gallium nitride Al
xin
yga
1-x-yn/Al
ain
bga
1-a-ba kind of double-heterostructure that N (0<x<1,0<y<1,0<a<1,0<b<1) forms, wherein p-type Al
xin
yga
1-x-ythe energy gap of N is greater than p-type Al
ain
bga
1-a-bthe energy gap of N.In the present embodiment, p-type Al
xin
yga
1-x-yn wide gap material layer 407a and p-type Al
ain
bga
1-a-bthe thickness of the narrow gap material layer of N 607b is respectively between between 1nm to 1000nm.And the first p-type semiconductor layer 606 is preferably p-type aluminum indium nitride gallium (AlGaInN) or p-type gallium nitride (GaN).The material of the second p-type semiconductor layer 608 is identical with the material essence that the first p-type semiconductor layer 606 is used.
Referring again to Fig. 6 B, form reflector 609 on the second p-type semiconductor layer 608.Form knitting layer 610 on reflector 609.Permanent substrate 611 is provided again, utilizes knitting layer 610 that permanent substrate 611 is combined with reflector 609.In the present embodiment, permanent substrate 611 is metal substrate, also can be used as the metal electrode of light-emitting diode 600.
Follow-up Fig. 6 C figure that please refer to after removing epitaxial substrate 601, forms another metal electrode 612, to complete the making of light-emitting diode 600 on N-shaped semiconductor layer 602.
Because the three-dimensional hole of p-type cloud structure 607 has the heterojunction structure of a plurality of different energy gaps, can make the interface band curvature of wide gap material layer/narrow gap material layer, and produce the phenomenon that the charge carrier energy level quantizes.Utilize this can make light-emitting diode there is high carrier mobility
andthe characteristic of high carrier concentration, the electric current R6 that permanent substrate 611 can be imported disperses among the active layer of light-emitting diode fifty-fifty.
With reference to Fig. 7 A and Fig. 7 B, Fig. 7 A is the CURRENT DISTRIBUTION image top view that illustrates a kind of known luminescence diode element.Fig. 7 B is the CURRENT DISTRIBUTION image top view that illustrates light-emitting diode of the present invention.Fig. 7 A and Fig. 7 B are by the electric current of 20mA by front electrode, and for example metal electrode, import light-emitting diode, then, by the electron microscope Imaging Study, electric current is in the distribution scenario of light-emitting diode.Comparison diagram 7A and Fig. 7 B, can find to have the light-emitting diode of the three-dimensional hole of N-shaped three-dimensional electronic cloud structure or p-type cloud structure, and its electric current dispersion effect is good than the known luminescence diode element.
According to above-described embodiment, feature of the present invention is among the p-type of light-emitting diode or N-shaped semiconductor layer, forms the three-dimensional hole cloud of a p-type or N-shaped three-dimensional electronic cloud structure.Wherein the three-dimensional hole cloud of each p-type or N-shaped three-dimensional electronic cloud structure include the heterojunction consisted of at least one wide gap material layer and at least one narrow gap material layer.
Because above-mentioned wide gap material layer and narrow gap material layer are formed by three or five group-III nitrides, characteristic with high carrier mobility and high carrier concentration, the electric current that electrode can be imported disperses among the active layer of light-emitting diode fifty-fifty, to solve the congested problem of known luminescence diode element electric current.Therefore use the technology of the present invention feature, there is technique simple, and promote the advantage of the luminous efficiency of light-emitting diode.
Although the present invention discloses as above with above preferred embodiment; so it is not in order to limit the present invention; without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations, so protection scope of the present invention is when looking accompanying being as the criterion that claim defines for those skilled in the art.
Claims (10)
1. the structure of a light-emitting diode comprises:
The N-shaped gallium nitride layer;
N-shaped electron cloud structure, be positioned on this N-shaped gallium nitride layer, comprises two heterogeneous N-shaped aluminum indium gallium nitride layers;
The N-shaped semiconductor layer, be positioned on this N-shaped electron cloud structure;
Active layer, be positioned on this N-shaped semiconductor layer; And
The first p-type semiconductor layer, be positioned on this active layer.
2. the structure of light-emitting diode as claimed in claim 1 also comprises:
P-type hole cloud structure, be positioned on this first p-type semiconductor layer, and this p-type hole cloud structure comprises wide gap material layer and narrow gap material layer, and at least one of this wide gap material layer and this narrow gap material layer is doped with the p-type dopant.
3. the structure of light-emitting diode as claimed in claim 2 also comprises:
The second p-type semiconductor layer, be positioned on this p-type hole cloud structure.
4. the structure of light-emitting diode as claimed in claim 2, this p-type hole cloud structure comprises two heterogeneous p-type aluminum indium gallium nitride layers.
5. the structure of light-emitting diode as claimed in claim 1, the material of this N-shaped semiconductor layer is the N-shaped gallium nitride.
6. the structure of light-emitting diode as claimed in claim 3, the material of this second p-type semiconductor layer is identical with the material essence of the first p-type semiconductor layer.
7. the structure of a light-emitting diode comprises:
The p-type semiconductor layer;
P-type hole cloud structure, be positioned on this p-type semiconductor layer, and this p-type hole cloud structure comprises two heterogeneous p-type aluminum indium gallium nitride layers;
The p-type gallium nitride layer, be positioned on this p-type hole cloud structure; And
Active layer, be positioned at this p-type gallium nitride layer;
The first N-shaped semiconductor layer, be positioned on this active layer.
8. the structure of light-emitting diode as claimed in claim 1 also comprises:
N-shaped hole cloud structure, be positioned on this first N-shaped semiconductor layer, and this N-shaped hole cloud structure comprises wide gap material layer and narrow gap material layer, and at least one of this wide gap material layer and this narrow gap material layer is doped with the N-shaped dopant.
9. the structure of light-emitting diode as claimed in claim 8 also comprises:
The second N-shaped gallium nitride layer, be positioned on this N-shaped hole cloud structure.
10. the structure of light-emitting diode as claimed in claim 7, the material of this p-type semiconductor layer is the p-type gallium nitride.
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|---|---|---|---|---|
| US20020104996A1 (en) * | 2001-02-05 | 2002-08-08 | Li-Hsin Kuo | Semiconductor light emitting diode on a misoriented substrate |
| US6631149B1 (en) * | 1999-10-15 | 2003-10-07 | Toyoda Gosei Co., Ltd. | Laser diode using group III nitride group compound semiconductor |
| CN1505843A (en) * | 2001-06-15 | 2004-06-16 | 克里公司 | GaN based LED formed on a SiC substrate |
| US20070045655A1 (en) * | 2005-08-25 | 2007-03-01 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor light emitting device |
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2008
- 2008-01-23 CN CN201310460157.8A patent/CN103500782B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6631149B1 (en) * | 1999-10-15 | 2003-10-07 | Toyoda Gosei Co., Ltd. | Laser diode using group III nitride group compound semiconductor |
| US20020104996A1 (en) * | 2001-02-05 | 2002-08-08 | Li-Hsin Kuo | Semiconductor light emitting diode on a misoriented substrate |
| CN1505843A (en) * | 2001-06-15 | 2004-06-16 | 克里公司 | GaN based LED formed on a SiC substrate |
| US20070045655A1 (en) * | 2005-08-25 | 2007-03-01 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor light emitting device |
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