CN103500769A - 一种超疏水的金字塔-硅纳米线复合陷光结构及其制备方法 - Google Patents
一种超疏水的金字塔-硅纳米线复合陷光结构及其制备方法 Download PDFInfo
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- CN103500769A CN103500769A CN201310412715.3A CN201310412715A CN103500769A CN 103500769 A CN103500769 A CN 103500769A CN 201310412715 A CN201310412715 A CN 201310412715A CN 103500769 A CN103500769 A CN 103500769A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 80
- 239000010703 silicon Substances 0.000 title claims abstract description 80
- 239000002070 nanowire Substances 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 150000001875 compounds Chemical class 0.000 title claims abstract description 16
- 230000003075 superhydrophobic effect Effects 0.000 title abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 61
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- 239000002245 particle Substances 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 30
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 27
- 239000002253 acid Substances 0.000 claims description 19
- 239000008187 granular material Substances 0.000 claims description 15
- 229910000510 noble metal Inorganic materials 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- 239000011259 mixed solution Substances 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 11
- 238000010276 construction Methods 0.000 claims description 11
- 101710134784 Agnoprotein Proteins 0.000 claims description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- 239000012670 alkaline solution Substances 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 8
- 210000004027 cell Anatomy 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 4
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 claims description 4
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000003638 chemical reducing agent Substances 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000006722 reduction reaction Methods 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- GZBAUYZREARCNR-UHFFFAOYSA-N C(CCCCCCCCC)[Si](OC)(OC)OC.[F] Chemical class C(CCCCCCCCC)[Si](OC)(OC)OC.[F] GZBAUYZREARCNR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000013528 metallic particle Substances 0.000 claims description 2
- -1 perfluoro Chemical group 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 238000007385 chemical modification Methods 0.000 abstract description 3
- 239000010970 precious metal Substances 0.000 abstract 2
- 239000003054 catalyst Substances 0.000 abstract 1
- 230000009977 dual effect Effects 0.000 abstract 1
- 125000003709 fluoroalkyl group Chemical group 0.000 abstract 1
- 238000002474 experimental method Methods 0.000 description 7
- 238000002310 reflectometry Methods 0.000 description 7
- 238000011160 research Methods 0.000 description 3
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- ZHPNWZCWUUJAJC-UHFFFAOYSA-N fluorosilicon Chemical compound [Si]F ZHPNWZCWUUJAJC-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002028 Biomass Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Composite Materials (AREA)
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Abstract
Description
Claims (7)
Priority Applications (1)
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CN201310412715.3A CN103500769B (zh) | 2013-09-11 | 2013-09-11 | 一种超疏水的金字塔‑硅纳米线复合陷光结构及其制备方法 |
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CN201310412715.3A CN103500769B (zh) | 2013-09-11 | 2013-09-11 | 一种超疏水的金字塔‑硅纳米线复合陷光结构及其制备方法 |
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CN103500769A true CN103500769A (zh) | 2014-01-08 |
CN103500769B CN103500769B (zh) | 2017-02-01 |
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CN201310412715.3A Active CN103500769B (zh) | 2013-09-11 | 2013-09-11 | 一种超疏水的金字塔‑硅纳米线复合陷光结构及其制备方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104716209A (zh) * | 2015-03-20 | 2015-06-17 | 黄河水电光伏产业技术有限公司 | 基于硅基纳米线的太阳能电池及其制备方法 |
CN109671808A (zh) * | 2019-01-21 | 2019-04-23 | 长春理工大学 | 一种具有硅纳米线结构的太阳能电池的制备方法 |
CN113675298A (zh) * | 2021-08-18 | 2021-11-19 | 上海交通大学 | 具有纳微米结构的TOPCon晶硅太阳电池 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090325336A1 (en) * | 2008-04-24 | 2009-12-31 | Malcolm Abbott | Methods for printing an ink on a textured wafer surface |
CN101937946A (zh) * | 2010-09-16 | 2011-01-05 | 浙江大学 | 一种太阳电池硅片的表面织构方法 |
CN102102227A (zh) * | 2010-11-18 | 2011-06-22 | 华北电力大学 | 具有疏水性的硅表面陷光结构制备方法 |
CN102140697A (zh) * | 2010-12-28 | 2011-08-03 | 中国科学院微电子研究所 | 一种基于单晶硅衬底上多孔金字塔结构的制造方法 |
CN102299207A (zh) * | 2011-08-30 | 2011-12-28 | 华北电力大学 | 用于太阳电池的多孔金字塔型硅表面陷光结构制备方法 |
CN103279429A (zh) * | 2013-05-24 | 2013-09-04 | 浪潮电子信息产业股份有限公司 | 一种应用感知的分布式全局共享缓存分区方法 |
-
2013
- 2013-09-11 CN CN201310412715.3A patent/CN103500769B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090325336A1 (en) * | 2008-04-24 | 2009-12-31 | Malcolm Abbott | Methods for printing an ink on a textured wafer surface |
CN101937946A (zh) * | 2010-09-16 | 2011-01-05 | 浙江大学 | 一种太阳电池硅片的表面织构方法 |
CN102102227A (zh) * | 2010-11-18 | 2011-06-22 | 华北电力大学 | 具有疏水性的硅表面陷光结构制备方法 |
CN102140697A (zh) * | 2010-12-28 | 2011-08-03 | 中国科学院微电子研究所 | 一种基于单晶硅衬底上多孔金字塔结构的制造方法 |
CN102299207A (zh) * | 2011-08-30 | 2011-12-28 | 华北电力大学 | 用于太阳电池的多孔金字塔型硅表面陷光结构制备方法 |
CN103279429A (zh) * | 2013-05-24 | 2013-09-04 | 浪潮电子信息产业股份有限公司 | 一种应用感知的分布式全局共享缓存分区方法 |
Non-Patent Citations (1)
Title |
---|
阙荣辉: "硅碳纳米材料在纳米发电机中的应用研究", 《中国博士学位论文全文数据库工程科技II辑》, 15 September 2012 (2012-09-15), pages 1 - 101 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104716209A (zh) * | 2015-03-20 | 2015-06-17 | 黄河水电光伏产业技术有限公司 | 基于硅基纳米线的太阳能电池及其制备方法 |
CN109671808A (zh) * | 2019-01-21 | 2019-04-23 | 长春理工大学 | 一种具有硅纳米线结构的太阳能电池的制备方法 |
CN113675298A (zh) * | 2021-08-18 | 2021-11-19 | 上海交通大学 | 具有纳微米结构的TOPCon晶硅太阳电池 |
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