CN103491319B - 成像装置 - Google Patents

成像装置 Download PDF

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Publication number
CN103491319B
CN103491319B CN201310218345.XA CN201310218345A CN103491319B CN 103491319 B CN103491319 B CN 103491319B CN 201310218345 A CN201310218345 A CN 201310218345A CN 103491319 B CN103491319 B CN 103491319B
Authority
CN
China
Prior art keywords
unit
imaging device
pixel
transmittance
electric field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201310218345.XA
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English (en)
Chinese (zh)
Other versions
CN103491319A (zh
Inventor
宋奇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of CN103491319A publication Critical patent/CN103491319A/zh
Application granted granted Critical
Publication of CN103491319B publication Critical patent/CN103491319B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/741—Circuitry for compensating brightness variation in the scene by increasing the dynamic range of the image compared to the dynamic range of the electronic image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/75—Circuitry for compensating brightness variation in the scene by influencing optical camera components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/133—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing panchromatic light, e.g. filters passing white light
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/135—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Studio Devices (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201310218345.XA 2012-06-11 2013-06-04 成像装置 Expired - Fee Related CN103491319B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012131679A JP6198235B2 (ja) 2012-06-11 2012-06-11 撮像装置
JP2012-131679 2012-06-11

Publications (2)

Publication Number Publication Date
CN103491319A CN103491319A (zh) 2014-01-01
CN103491319B true CN103491319B (zh) 2018-03-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310218345.XA Expired - Fee Related CN103491319B (zh) 2012-06-11 2013-06-04 成像装置

Country Status (3)

Country Link
US (1) US9654705B2 (https=)
JP (1) JP6198235B2 (https=)
CN (1) CN103491319B (https=)

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CN104850172A (zh) * 2014-02-14 2015-08-19 宇龙计算机通信科技(深圳)有限公司 一种具备屏幕镜子功能的电子终端
CN105681771A (zh) * 2014-11-21 2016-06-15 比亚迪股份有限公司 阵列成像系统及图像传感器
CN104965338A (zh) * 2015-07-20 2015-10-07 京东方科技集团股份有限公司 一种显示面板和显示装置
SE1750159A1 (sv) * 2017-02-17 2018-08-18 Fingerprint Cards Ab Cancelling out impairment data in fingerprint images
WO2019119452A1 (zh) * 2017-12-22 2019-06-27 深圳配天智能技术研究院有限公司 图像传感器及其获取图像的方法、智能设备
CN108598099A (zh) * 2018-05-18 2018-09-28 上海华虹宏力半导体制造有限公司 图像传感器结构以及图像传感器
CN109616486B (zh) * 2018-11-23 2025-05-16 深圳市华辰信科电子有限公司 图像传感器及其制造方法
CN114072347B (zh) * 2019-06-26 2022-11-29 三菱电机楼宇解决方案株式会社 电梯的门导轨清扫辅具
CN111119950B (zh) * 2019-11-29 2021-09-03 中车青岛四方机车车辆股份有限公司 一种具有吸音显像的复合内壁及其应用
CN111025435A (zh) * 2019-12-27 2020-04-17 中国兵器装备研究院 基于聚合物网络液晶的可变焦超透镜及制备方法
CN114079719A (zh) * 2020-08-20 2022-02-22 深圳市万普拉斯科技有限公司 图像传感器、成像装置和电子设备
JP7593092B2 (ja) * 2020-12-21 2024-12-03 日本電気株式会社 撮像装置および撮像方法および撮像装置の制御プログラム

Citations (2)

* Cited by examiner, † Cited by third party
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CN102347341A (zh) * 2010-07-30 2012-02-08 索尼公司 固态摄像器件、其驱动方法和电子装置
WO2012017607A1 (ja) * 2010-08-04 2012-02-09 パナソニック株式会社 固体撮像装置、撮像装置

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JP2612914B2 (ja) * 1988-10-19 1997-05-21 オリンパス光学工業株式会社 複数の液晶素子を備えた光学系
JPH05244609A (ja) * 1991-10-18 1993-09-21 Olympus Optical Co Ltd カラー撮像装置
US6952233B2 (en) * 1992-07-23 2005-10-04 Canon Kabushiki Kaisha Video camera having a material element for controlling light transmission
US6388709B1 (en) * 1995-04-21 2002-05-14 Canon Kabushiki Kaisha Image sensing apparatus with optical modulation elements having transmission characteristics controllable by pixel
ATE298098T1 (de) * 1997-02-06 2005-07-15 Univ Dublin Elektrochromes system
JP4451583B2 (ja) * 2001-12-27 2010-04-14 富士フイルム株式会社 撮像装置、撮像方法、及びプログラム
US7419314B2 (en) * 2004-05-19 2008-09-02 Fujifilm Corporation Optical density changing element, optical element and photographing unit
JP5697377B2 (ja) * 2010-08-20 2015-04-08 キヤノン株式会社 エレクトロクロミック調光素子及び撮像装置
US8618588B2 (en) * 2010-10-29 2013-12-31 International Business Machines Corporation Anti-blooming pixel sensor cell with active neutral density filter, methods of manufacture, and design structure
JP5539162B2 (ja) * 2010-11-04 2014-07-02 キヤノン株式会社 エレクトロクロミック素子
JP5948837B2 (ja) * 2011-03-29 2016-07-06 ソニー株式会社 固体撮像素子及び電子機器
US8508830B1 (en) * 2011-05-13 2013-08-13 Google Inc. Quantum dot near-to-eye display
CN104185808A (zh) * 2011-10-11 2014-12-03 派力肯影像公司 包括自适应光学元件的透镜堆叠阵列

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102347341A (zh) * 2010-07-30 2012-02-08 索尼公司 固态摄像器件、其驱动方法和电子装置
WO2012017607A1 (ja) * 2010-08-04 2012-02-09 パナソニック株式会社 固体撮像装置、撮像装置

Also Published As

Publication number Publication date
US20130329105A1 (en) 2013-12-12
US9654705B2 (en) 2017-05-16
CN103491319A (zh) 2014-01-01
JP6198235B2 (ja) 2017-09-20
JP2013258458A (ja) 2013-12-26

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Effective date of registration: 20160920

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Applicant after: SONY SEMICONDUCTOR SOLUTIONS Corp.

Address before: Tokyo, Japan

Applicant before: Sony Corp.

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20180313

CF01 Termination of patent right due to non-payment of annual fee