CN103489750B - 一种组合薄膜的制备方法 - Google Patents
一种组合薄膜的制备方法 Download PDFInfo
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- CN103489750B CN103489750B CN201310413317.3A CN201310413317A CN103489750B CN 103489750 B CN103489750 B CN 103489750B CN 201310413317 A CN201310413317 A CN 201310413317A CN 103489750 B CN103489750 B CN 103489750B
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000010409 thin film Substances 0.000 title abstract 6
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000001451 molecular beam epitaxy Methods 0.000 claims abstract description 8
- 230000008569 process Effects 0.000 claims abstract description 4
- 238000009826 distribution Methods 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 9
- 239000002243 precursor Substances 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000013077 target material Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- HUTDUHSNJYTCAR-UHFFFAOYSA-N ancymidol Chemical compound C1=CC(OC)=CC=C1C(O)(C=1C=NC=NC=1)C1CC1 HUTDUHSNJYTCAR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310413317.3A CN103489750B (zh) | 2013-09-12 | 2013-09-12 | 一种组合薄膜的制备方法 |
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CN201310413317.3A CN103489750B (zh) | 2013-09-12 | 2013-09-12 | 一种组合薄膜的制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN103489750A CN103489750A (zh) | 2014-01-01 |
CN103489750B true CN103489750B (zh) | 2014-10-22 |
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CN201310413317.3A Expired - Fee Related CN103489750B (zh) | 2013-09-12 | 2013-09-12 | 一种组合薄膜的制备方法 |
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CN (1) | CN103489750B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103762078B (zh) * | 2014-01-20 | 2017-02-01 | 中国科学院物理研究所 | 基于组合薄膜的宽温区可调谐微波器件 |
WO2019100292A1 (zh) * | 2017-11-23 | 2019-05-31 | 深圳市矩阵多元科技有限公司 | 同批次制备多种不同成分含量的合成材料的方法 |
CN108193175A (zh) * | 2017-11-23 | 2018-06-22 | 深圳市矩阵多元科技有限公司 | 同批次制备多种不同成分含量的合成材料的方法 |
CN113337798B (zh) * | 2021-04-13 | 2022-12-27 | 电子科技大学 | 薄膜制备方法、高通量组合材料芯片制备方法及其系统 |
CN115233165B (zh) * | 2022-02-21 | 2023-11-28 | 松山湖材料实验室 | 组合薄膜制备方法及装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000086389A (ja) * | 1998-09-11 | 2000-03-28 | Japan Science & Technology Corp | コンビナトリアルレーザー分子線エピタキシー装置 |
US8236108B1 (en) * | 2008-04-25 | 2012-08-07 | University Of South Florida | Inertial masking assembly |
CN102231367B (zh) * | 2011-04-26 | 2013-04-24 | 哈尔滨工业大学 | 扫描式薄膜图形激光转移方法 |
CN103103480A (zh) * | 2011-11-15 | 2013-05-15 | 中国科学院物理研究所 | 薄膜沉积设备及薄膜沉积方法 |
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2013
- 2013-09-12 CN CN201310413317.3A patent/CN103489750B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000086389A (ja) * | 1998-09-11 | 2000-03-28 | Japan Science & Technology Corp | コンビナトリアルレーザー分子線エピタキシー装置 |
US8236108B1 (en) * | 2008-04-25 | 2012-08-07 | University Of South Florida | Inertial masking assembly |
CN102231367B (zh) * | 2011-04-26 | 2013-04-24 | 哈尔滨工业大学 | 扫描式薄膜图形激光转移方法 |
CN103103480A (zh) * | 2011-11-15 | 2013-05-15 | 中国科学院物理研究所 | 薄膜沉积设备及薄膜沉积方法 |
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CN103489750A (zh) | 2014-01-01 |
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Addressee: Zhang Ye Document name: Notification of Passing Examination on Formalities |
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Owner name: RESEARCH INSTITUTE OF PHYSICS, CHINESE ACADEMY OF Free format text: FORMER OWNER: JIN KUI Effective date: 20140922 |
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Effective date of registration: 20140922 Address after: 100190 Beijing City, Haidian District Zhongguancun South Street No. 8 Applicant after: Research Institute of Physics, Chinese Academy of Sciences Address before: 100190 Beijing City, Haidian District Zhongguancun South Street No. 8 Applicant before: Jin Kui |
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