CN103474500A - Low-surface composite solar-energy cell and manufacturing method thereof - Google Patents
Low-surface composite solar-energy cell and manufacturing method thereof Download PDFInfo
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- CN103474500A CN103474500A CN2013103037821A CN201310303782A CN103474500A CN 103474500 A CN103474500 A CN 103474500A CN 2013103037821 A CN2013103037821 A CN 2013103037821A CN 201310303782 A CN201310303782 A CN 201310303782A CN 103474500 A CN103474500 A CN 103474500A
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Abstract
The invention provides a low-surface composite solar-energy cell and a manufacturing method thereof. The low-surface composite solar-energy cell is provided with a silicon substrate, a diffusion layer and an antireflection film layer from bottom to top. A positive electrode is sintered on the antireflection film layer. The positive electrode is in electrical contact with the diffusion layer. The manufacturing method includes the following steps: original-silicon-chip flocking; diffusing through adoption of a low sheet resistance and deep freeze process; etching a PN junction on a back face and an edge after the diffusion and removing PSG; processing with an HF/HNO3 mixed solution or a dilute NaOH solution after the etching so that a dead-layer is removed and an assigned surface concentration is achieved; coating an antireflection film; silk-screen printing; and sintering. The low-surface composite solar-energy cell and the manufacturing method thereof overcome disadvantages that a dosage concentration of the surface of the cell is hard to control, effects of the surface dead layer cannot be prevented completely and uniformity is hard to ensure when sheet resistance is high under a condition that advantages that a high-sheet-resistance technology is simple in process and low in cost are maintained.
Description
Technical field
The present invention relates to the photovoltaic field, be specifically related to a kind of low surface recombination solar cell and preparation method thereof.
Background technology
Low-cost, high efficiency is the developing direction of current crystal silicon solar energy battery.Reduce the doping content of light area, reduce surface recombination and can effectively promote the short-wave band photon efficiency, blue response is good, and current density is high, thereby promotes battery performance, is one of effective way improved battery efficiency.Mainly contain at present following technology and can reach the reduction doping content, reduce the purpose of surface recombination: selective emitter technology, high square resistance technology, ion implantation technique.Be subject in the past the impact of golden half contact quality, for uniform emission utmost point battery, the doping content of front side silver paste contact area can not be done very lowly, the selective emitter technology developed under background at that time can not be subject to the restriction of golden half contact quality, surface doping concentration is done low, but its technological process is relatively complicated, technological requirement is higher, need interpolation equipment or original product line is transformed, cost is higher.And the development along with Size Technology, front side silver paste can form good ohmic contact with the more and more lower surface of doping content, simple, with low cost high square resistance technology that a lot of enterprises are more prone to technique, what the cell piece of most enterprises production adopted at present is all the high square resistance technical matters.The high square resistance technical matters is simple, with low cost, and the silver slurry of appropriate mix, can promote battery efficiency.But sheet resistance is done height, knot is done when shallow, generally can reduce TongYuan's amount, reduce temperature, reduce the process time, surface doping concentration and junction depth all are difficult to control in this case, and uniformity also is difficult to assurance; Should guarantee that surperficial doping content considers junction depth again, both are difficult to reach ideal conditionss simultaneously simultaneously; This technique can't be avoided the impact of surface " dead layer " (inactive layer) fully in addition; Above some all can badly influence the effect of improved efficiency.Although ion implantation technique can be to doping content, junction depth is accurately controlled, and uniformity is also fine, needs to add ion implantation device, with high costs.
Summary of the invention
For solving the problems of the technologies described above, the object of the present invention is to provide a kind of low surface recombination solar cell and preparation method thereof, make in reservation high square resistance technical matters simple, overcoming its surperficial doping content in advantage situation with low cost is difficult to control, can't avoid the impact of surperficial dead layer fully, sheet resistance is done uniformity when high and is difficult to the shortcoming guaranteed.
For achieving the above object, technical scheme of the present invention is as follows: a kind of low surface recombination solar cell, be disposed with from down to up: silicon base, diffusion layer, anti-reflection rete, on the anti-reflection rete, sintering has positive electrode, and described positive electrode and described diffusion layer electrically contact.
Preferably, described low surface recombination solar cell is high square resistance and low surface concentration, and its sheet resistance reaches 70 ~ 120 Ω/, and the surface concentration size is between 1E20 ~ 5E20.
The invention provides a kind of manufacture method of low surface recombination solar cell, comprise the following steps:
The first step, former silicon wafer wool making;
Second step, after making herbs into wool, be different from common high square resistance technique, adopts low square resistance, deeply ties technique and spread, and diffused sheet resistance is more even;
The 3rd step, after diffusion, the back side and edge PN junction etching, remove PSG;
The 4th step, process with HF/HNO3 mixed solution or dilute NaOH solution after etching, removes dead layer; Reduce surperficial doping content
The 5th step, the plating antireflective film;
The 6th step, silk screen printing, sintering.
Preferably, in described second step, the diffusion technology of described employing low square resistance, dark knot, sheet resistance is controlled at 30 ~ 60 Ω/, and junction depth is controlled at 0.3 ~ 0.6um.
Preferably, in described the 4th step, in described HF/HNO3 mixed solution, the volume ratio of HF/HNO3 is 1:3 ~ 1:10, and described dilute NaOH solution concentration is 0.1% ~ 2%.
Preferably, in the 4th step, in the situation of fixed solution concentration, by the adjusting process time, adjust etching extent, thereby final surface doping concentration is accurately controlled.
Preferably, by increasing TongYuan's amount, the source amount is reached capacity, improve diffusion temperature simultaneously, increase diffusion time, can greatly improve like this uniformity of sheet resistance, junction depth is controlled by technological temperature or time, in the situation that junction depth is done deeply and do not considered surface concentration, junction depth is easily controlled.
Adopt technique scheme, the beneficial effect of technical solution of the present invention is: adopt the diffusion technology of low square resistance, dark knot at second step, by increasing TongYuan's amount, the source amount is reached capacity, improve diffusion temperature simultaneously, increase diffusion time, can greatly improve like this uniformity of sheet resistance.Junction depth is controlled by technological temperature or time, in the situation that junction depth is done deeply and do not considered that surface concentration, junction depth ratio are easier to control.Increase by the 4th step on common process, adopt HF/HNO3 mixed solution or rare NaOH solution that the dead layer of silicon chip surface is eroded, reduce surperficial doping content.
In the situation that fixed solution concentration is adjusted etching extent by the adjusting process time, thereby final surface doping concentration is accurately controlled.Most equipment possesses the transformation condition at present, by simple equipment and technology adjustment, the 4th step can be integrated in the 3rd step, and technique is simpler, operates easier.
The present invention is to possess the high square resistance technical matters simple, and the prerequisite lower surface doping content of advantage with low cost is more accurate in controlling, and can avoid the impact of dead layer, and the uniformity of sheet resistance is also better, and battery efficiency promotes more obvious.
The accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in embodiment of the present invention technology, below will the accompanying drawing of required use in the embodiment technical description be briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation of the present invention in second step.
Fig. 2 is the structural representation of the present invention in the 3rd step.
Fig. 3 is the structural representation of the present invention in the 4th step.
Fig. 4 is that the present invention is the structural representation of product in the 6th step.
Wherein, legend:
Silicon base, 2. diffusion layer, 3. " dead layer " (inactive layer), 4.PSG,
5. antireflective film, 6. positive electrode
Annotate: 1., 2., 3., 4., 5., 6. number in the figure distinguishes corresponding 1,2,3,4,5,6.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making under the creative work prerequisite the every other embodiment obtained, belong to the scope of protection of the invention.
As Fig. 1 to as shown in Fig. 4,
A kind of low surface recombination solar cell, is characterized in that, is disposed with from down to up: silicon base 1, diffusion layer 2, anti-reflection rete 5, and on the anti-reflection rete, sintering has positive electrode 6, and described positive electrode 6 electrically contacts with described diffusion layer 2.
Its manufacture method comprises the following steps:
The first step, former silicon wafer wool making;
Second step, after making herbs into wool, be different from common high square resistance technique, adopts low square resistance, deeply ties technique and spread, and diffused sheet resistance is more even; Sheet resistance is controlled at 40 Ω/, and junction depth is controlled at 0.4um.
The 3rd step, after diffusion, the back side and edge PN junction etching, remove PSG4;
The 4th step, process with HF/HNO3 mixed solution or dilute NaOH solution after etching, removes dead layer (inactive layer) 3; Reduce surperficial doping content; In described HF/HNO3 mixed solution, the volume ratio of HF/HNO3 is 1:5, or adopts the dilute NaOH solution of 0.5% concentration.
The 5th step, the plating antireflective film;
The 6th step, silk screen printing, sintering.
In the above-described embodiments, in described second step, the diffusion technology of described employing low square resistance, dark knot, according to actual needs, sheet resistance can be controlled in the arbitrary numerical value between 30 ~ 60 Ω/, as 31 Ω/, 32 Ω/, 33 Ω/ ... 57 Ω/, 58 Ω/, 59 Ω/, junction depth is controlled at the arbitrary numerical value between 0.3 ~ 0.6um, as 0.31um, 32um ... 0.57um, 0.58um, 0.59um.
In the above-described embodiments, in described the 4th step, according to actual needs, in described HF/HNO3 mixed solution, the volume ratio of HF/HNO3 can be chosen to be the arbitrary numerical value between 1:3 ~ 1:10, as 1:4,1:5 ... 1:8,1:9, the controlled arbitrary numerical value be made as between 0.1% ~ 2% of described dilute NaOH solution concentration, as 0.2%, 0.3% ... 1.8%, 1.9%.
In the 4th step, adjust etching extent by the adjusting process time in the situation of fixed solution concentration, thereby final surface doping concentration is accurately controlled.
In second step, by increasing TongYuan's amount, the source amount is reached capacity, improve diffusion temperature simultaneously, increase diffusion time, can greatly improve like this uniformity of sheet resistance, junction depth is controlled by technological temperature or time, in the situation that junction depth is done deeply and do not considered surface concentration, junction depth is easily controlled.
Adopt technique scheme, the beneficial effect of technical solution of the present invention is: adopt the diffusion technology of low square resistance, dark knot at second step, by increasing TongYuan's amount, the source amount is reached capacity, improve diffusion temperature simultaneously, increase diffusion time, can greatly improve like this uniformity of sheet resistance.Junction depth is controlled by technological temperature or time, in the situation that junction depth is done deeply and do not considered that surface concentration, junction depth ratio are easier to control.Increase by the 4th step on common process, adopt HF/HNO3 mixed solution or rare NaOH solution that the dead layer of silicon chip surface is eroded, reduce surperficial doping content.
In the situation that fixed solution concentration is adjusted etching extent by the adjusting process time, thereby final surface doping concentration is accurately controlled.Most equipment possesses the transformation condition at present, by simple equipment and technology adjustment, the 4th step can be integrated in the 3rd step, and technique is simpler, operates easier.
The present invention is to possess the high square resistance technical matters simple, and the prerequisite lower surface doping content of advantage with low cost is more accurate in controlling, and can avoid the impact of dead layer, and the uniformity of sheet resistance is also better, and battery efficiency promotes more obvious.
A kind of low surface recombination solar cell made by above-described embodiment is disposed with from down to up: silicon wafer layer, diffusion layer, anti-reflection rete, and on the anti-reflection rete, sintering has positive electrode, and described positive electrode and described diffusion layer electrically contact.
Wherein, the battery sheet resistance reaches 70 ~ 120 Ω/, and the surface concentration size is between 1E20 ~ 5E20.
Said method and the product made thereof have the following advantages:
1), battery efficiency effectively promotes.
2), only need existing production technology is simply adjusted method simple possible with low cost.
3), the sheet resistance good uniformity, can the effects on surface doping content and junction depth accurately control.
To the above-mentioned explanation of the disclosed embodiments, make professional and technical personnel in the field can realize or use the present invention.Multiple modification to these embodiment will be apparent for those skilled in the art, and General Principle as defined herein can be in the situation that do not break away from the spirit or scope of the present invention, realization in other embodiments.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (7)
1. one kind low surface recombination solar cell, is characterized in that, is disposed with from down to up: silicon base, diffusion layer, anti-reflection rete, and on the anti-reflection rete, sintering has positive electrode, and described positive electrode and described diffusion layer electrically contact.
2. low surface recombination solar cell according to claim 1, is characterized in that, described low surface recombination solar cell is high square resistance and low surface concentration, and its sheet resistance reaches 70 ~ 120 Ω/, and the surface concentration size is between 1E20 ~ 5E20.
3. the manufacture method of a low surface recombination solar cell, is characterized in that, comprises the following steps:
The first step, former silicon wafer wool making;
Second step, after making herbs into wool, be different from common high square resistance technique, adopts low square resistance, deeply ties technique and spread;
The 3rd step, after diffusion, the back side and edge PN junction etching, remove PSG;
The 4th step, process with HF/HNO3 mixed solution or dilute NaOH solution after etching, removes dead layer, and reach designated surface concentration;
The 5th step, the plating antireflective film;
The 6th step, silk screen printing, sintering.
4. the manufacture method of low surface recombination solar cell according to claim 3, is characterized in that, in described second step, and the diffusion technology of described employing low square resistance, dark knot, sheet resistance is controlled at 30 ~ 60 Ω/, and junction depth is controlled at 0.3 ~ 0.6um.
5. the manufacture method of low surface recombination solar cell according to claim 3, is characterized in that, in described the 4th step, in described HF/HNO3 mixed solution, the volume ratio of HF/HNO3 is 1:3 ~ 1:10, and described dilute NaOH solution concentration is 0.1% ~ 2%.
6. according to the manufacture method of the described low surface recombination solar cell of claim 3 or 5, it is characterized in that, in the 4th step, adjust etching extent by the adjusting process time in the situation of fixed solution concentration, thereby final surface doping concentration is accurately controlled.
7. according to the manufacture method of the described low surface recombination solar cell of claim 3 or 4, it is characterized in that, by increasing TongYuan's amount, the source amount is reached capacity, improve diffusion temperature simultaneously, increase diffusion time, can greatly improve the uniformity of sheet resistance like this, junction depth is controlled by technological temperature or time, in the situation that junction depth is done deeply and do not considered surface concentration, junction depth is easily controlled.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107081958A (en) * | 2017-06-12 | 2017-08-22 | 通威太阳能（合肥）有限公司 | Cost-reducing and efficiency-improving positive electrode screen printing plate and using method thereof |
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| CN102881776A (en) * | 2012-10-15 | 2013-01-16 | 浙江正泰太阳能科技有限公司 | Method for preparing back surface passivation crystalline silicon solar cell and solar cell |
| CN102969404A (en) * | 2012-12-12 | 2013-03-13 | 泰通(泰州)工业有限公司 | Preparation process of high-efficiency solar cell |
| CN203351628U (en) * | 2013-07-19 | 2013-12-18 | 中利腾晖光伏科技有限公司 | Low-surface recombination solar cell |
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| US20040025932A1 (en) * | 2002-08-12 | 2004-02-12 | John Husher | Variegated, high efficiency solar cell and method for making same |
| US20090227061A1 (en) * | 2008-03-05 | 2009-09-10 | Nicholas Bateman | Establishing a high phosphorus concentration in solar cells |
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