CN103474478A - Silicon carbide SBD device - Google Patents
Silicon carbide SBD device Download PDFInfo
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- CN103474478A CN103474478A CN2013104413776A CN201310441377A CN103474478A CN 103474478 A CN103474478 A CN 103474478A CN 2013104413776 A CN2013104413776 A CN 2013104413776A CN 201310441377 A CN201310441377 A CN 201310441377A CN 103474478 A CN103474478 A CN 103474478A
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- Prior art keywords
- termination environment
- schottky contact
- sbd device
- contact region
- edge
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 27
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 9
- 230000008901 benefit Effects 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 230000008569 process Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- -1 nitrogen ion Chemical class 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to the technical field of microelectronics, in particular to a silicon carbide SBD device with a groove type terminal. The silicon carbide SBD device comprises a Schottky contact area, a SiO2 isolation area, a terminal area, an N- epitaxial layer, an N+ substrate area and an ohmic contact area which are sequentially arranged from top to bottom in a layering mode. The terminal area is arranged on the upper surface of the N- epitaxial layer and is connected with the edge of the Schottky contact area, the terminal area surrounds the edge of the Schottky contact area continuously for a lap, the terminal area is of a groove type structure, and a groove matched with the groove type structure is formed in the connected end between the lower surface of the metal edge position of the Schottky contact area and the terminal area. By means of the technical scheme, the silicon carbide SBD device has the following advantages of meeting the requirements of a traditional silicon carbide SBD device for breakdown voltage conditions, changing a terminal of the traditional SBD device to be of a groove type or a step type, simplifying process, reducing manufacturing difficulty, improving production efficiency, reducing production cost and improving product yield.
Description
Technical field
The present invention relates to microelectronics technology, refer to especially a kind of carborundum SBD device with block floating junction.
Background technology
Semiconductor material with wide forbidden band is the third generation semi-conducting material that first generation silicon, germanium and the materials such as second generation GaAs, indium phosphide grow up later that continues.In third generation semi-conducting material, carborundum (SiC) and gallium nitride (GaN) are outstanding persons wherein.The carbofrax material technology is ripe, existing high-quality 4 inches wafers.And gallium nitride material does not have gallium nitride substrate, extension can only rely on other materials, and its thermal conductivity only has 1/4th of carborundum, and can't realize the p-type doping.This makes gallium nitride material be restricted in high pressure, application aspect high-power, and comparatively speaking carbofrax material is particularly remarkable in the advantage of power electronics application.
And traditional JTE and GR SBD device are generally used ion implantation technology, change technique relatively complicated, making step is loaded down with trivial details, larger on the manufacture craft difficulty, causes production efficiency low, and the qualification rate of product is also had a certain impact.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of carborundum SBD device, by traditional SBD device terminal change grooved or notch cuttype into, meeting under the needed puncture voltage condition of conventional carbon SiClx SBD device, will simplify technique and realize, reducing manufacture difficulty.
For solving the problems of the technologies described above, embodiments of the invention provide a kind of carborundum SBD device, comprise from top to down Schottky contact region, SiO that layering successively arranges
2isolated area, termination environment, N
-epitaxial loayer, N
+substrate zone and ohmic contact regions, described termination environment is positioned at N
-the epitaxial loayer upper surface is connected with Schottky contact region edge, described termination environment is at a circle of Schottky contact region continuous edge, described termination environment is trench structure, and described Schottky contact region metal edge place lower surface is provided with the link of termination environment the groove matched with trench structure.
As preferably, described termination environment is the circle cuboid groove at the Schottky contacts area edge under three-dimensional structure.
As preferably, described termination environment is at a circle of Schottky contact region continuous edge, and described termination environment is the notch cuttype structure, and described Schottky contact region metal edge place lower surface is provided with the link of termination environment the groove matched with the notch cuttype structure.
As preferably, described N
-the end face of epitaxial loayer and the thickness between bottom surface are 20 μ m, and its nitrogen ion doping concentration is 1 * 10
15～1 * 10
16cm
-3.
As preferably, described termination environment thickness is 2 μ m, and width is 10 μ m.
As preferably, the distance between described termination environment inward flange and Schottky contact region is 2 μ m.
As preferably, described Schottky contact region metal edge is positioned on the dielectric layer of inside, termination environment.
The beneficial effect of technique scheme of the present invention is as follows: meet under the needed puncture voltage condition of conventional carbon SiClx SBD device, by traditional SBD device terminal change grooved or notch cuttype into, simplify technique, reduce manufacture difficulty, enhance productivity, reduce production costs, improve the qualification rate of product.
The accompanying drawing explanation
The structural representation of the carborundum SBD device embodiment that Fig. 1 is grooved terminal of the present invention.
The structural representation of the carborundum SBD device embodiment that Fig. 2 is stepped groove-shaped terminal of the present invention.
Embodiment
For making the technical problem to be solved in the present invention, technical scheme and advantage clearer, be described in detail below in conjunction with the accompanying drawings and the specific embodiments.
The present invention is directed to existing deficiency a kind of carborundum SBD device is provided, as shown in Figure 1, comprise from top to down Schottky contact region 1, SiO that layering successively arranges
2 isolated area 2, termination environment 3, N
-epitaxial loayer 4, N
+substrate zone 5 and ohmic contact regions 6, described termination environment is positioned at N
-the epitaxial loayer upper surface is connected with Schottky contact region edge, described termination environment is at a circle of Schottky contact region continuous edge, described termination environment is trench structure, and described Schottky contact region metal edge place lower surface is provided with the link of termination environment the groove matched with trench structure.
Described termination environment is the circle cuboid groove at the Schottky contacts area edge under three-dimensional structure.
Wherein the edge of the 3 pairs of Schottky contact region in termination environment plays the effect of protection zone, alleviates the peak value electric field of Schottky contacts area edge, reaches and the similar effect of other common terminals, can not introduce additional junction capacitance simultaneously and increase reverse leakage current.
Described N
-the end face of epitaxial loayer and the thickness between bottom surface are 20 μ m, and its nitrogen ion doping concentration is 1 * 10
15～1 * 10
16cm
-3.
Described termination environment thickness is 2 μ m, and width is 10 μ m.
Distance between described termination environment inward flange and Schottky contact region is 2 μ m.
Described Schottky contact region metal edge is positioned on the dielectric layer of inside, termination environment.
As shown in Figure 2, described termination environment is at a circle of Schottky contact region continuous edge, and described termination environment is the notch cuttype structure, and described Schottky contact region metal edge place lower surface is provided with the link of termination environment the groove matched with the notch cuttype structure.
Described N
-the end face of epitaxial loayer and the thickness between bottom surface are 20 μ m, and its nitrogen ion doping concentration is 1 * 10
15～1 * 10
16cm
-3.
Described termination environment thickness is 2 μ m, and width is 10 μ m.
Distance between edge, described termination environment and Schottky contact region is 2 μ m.
Described Schottky contact region metal edge is positioned on the dielectric layer of inside, termination environment.
In specific implementation process, can as the case may be, in the situation that basic structure is constant, carry out certain accommodation design.For example:
One, in the situation that meet the withstand voltage 1500V of device, N
-the concentration of epitaxial loayer can be designed as 3 * 10
15cm
-3, 5 * 10
15cm
-3with 7 * 10
15cm
-3three kinds of different ways.The increase of concentration can make the slope of electric field reduce, and voltage endurance capability also can decrease.。
Two,, in the situation that meet the withstand voltage 1500V of device, the thickness of termination environment can be designed as 2 μ m, 5 μ m and tri-kinds of different ways of 10 μ m.The thickness of the trench structure formed is very large for the impact of the puncture voltage of device, and thicker terminal is stronger to the protection of Schottky contacts area edge, and puncture voltage is higher.
Three,, in the situation that meet the withstand voltage 1500V of device, the length of termination environment can be designed as 10 μ m, 20 μ m and tri-kinds of different ways of 30 μ m.Increase the width of the suitable diffraction depletion region of length of termination environment, reach the purpose that improves puncture voltage.
Four, the structure of termination environment can be for there being two kinds of different ways of Fig. 1 and Fig. 2.Fig. 1 is that termination environment is trench structure, and Fig. 2 is the structure that termination environment is notch cuttype, and wherein thickness increases from the inside to surface successively.Two kinds of structures all can play the effect at protection schottky junction edge, and can not have influence on the forward characteristic of device.
Adopt the carborundum SBD device with grooved terminal of the present invention, guaranteeing electric field concentration effect inhibitory action, do not affect in the situation of reverse breakdown voltage, the structure of termination environment will be optimized as far as possible, comprise the degree of depth, length and with Schottky contact region the distance etc., make it to reach optimal performance.Along with the development of semiconductor technology, adopt the present invention can also make more novel high-power device.
The present invention also provides a kind of manufacture method of above-mentioned carborundum SBD device, and in the method, realize by the carborundum dry etching termination environment.Comprise following concrete steps:
A10, make the ground floor epitaxial loayer by epitaxy technique on silicon carbide substrates, form N
-the drift region of epitaxial loayer;
A20, ion beam evaporation deposited metal, form the window of grooved terminal by etching, the carborundum dry etching forms trench structure, i.e. grooved terminal;
A30, positive deposit SiO
2spacer medium;
A40, the ohmic contact regions of making bottom surface and the schottky metal district of end face;
A50, the passivation of PI glue.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (7)
1. a carborundum SBD device, is characterized in that, comprises from top to down Schottky contact region, SiO that layering successively arranges
2isolated area, termination environment, N
-epitaxial loayer, N
+substrate zone and ohmic contact regions, described termination environment is positioned at N
-the epitaxial loayer upper surface is connected with Schottky contact region edge, described termination environment is at a circle of Schottky contact region continuous edge, described termination environment is trench structure, and described Schottky contact region metal edge place lower surface is provided with the link of termination environment the groove matched with trench structure.
2. a kind of carborundum SBD device as claimed in claim 1, is characterized in that, described termination environment is the circle cuboid groove at the Schottky contacts area edge under three-dimensional structure.
3. a kind of carborundum SBD device as claimed in claim 1, it is characterized in that, described termination environment is at a circle of Schottky contact region continuous edge, described termination environment is the notch cuttype structure, and described Schottky contact region edge lower surface is provided with the link of termination environment the groove matched with the notch cuttype structure.
4. a kind of carborundum SBD device as described as claim 1 or 3, is characterized in that described N
-the end face of epitaxial loayer and the thickness between bottom surface are 20 μ m, and its nitrogen ion doping concentration is 1 * 10
15～1 * 10
16cm
-3.
5. a kind of carborundum SBD device as claimed in claim 4, is characterized in that, described termination environment thickness is 2 μ m, and width is 10 μ m.
6. a kind of carborundum SBD device as claimed in claim 5, is characterized in that, the distance between described termination environment inward flange and Schottky contact region is 2 μ m.
7. a kind of carborundum SBD device as claimed in claim 6, is characterized in that, described Schottky contact region metal edge is positioned on the dielectric layer of inside, termination environment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013104413776A CN103474478A (en) | 2013-09-17 | 2013-09-17 | Silicon carbide SBD device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013104413776A CN103474478A (en) | 2013-09-17 | 2013-09-17 | Silicon carbide SBD device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103474478A true CN103474478A (en) | 2013-12-25 |
Family
ID=49799264
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|---|---|---|---|
| CN2013104413776A Pending CN103474478A (en) | 2013-09-17 | 2013-09-17 | Silicon carbide SBD device |
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| Country | Link |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104616978A (en) * | 2014-12-31 | 2015-05-13 | 国家电网公司 | Silicon-carbide power device terminal structure manufacturing method |
| CN104637793A (en) * | 2014-12-31 | 2015-05-20 | 国家电网公司 | Manufacturing method of terminal structure of silicon carbide device |
| JP2017139289A (en) * | 2016-02-02 | 2017-08-10 | トヨタ自動車株式会社 | diode |
| CN108292686A (en) * | 2015-12-02 | 2018-07-17 | 三菱电机株式会社 | Silicon carbide epitaxy substrate and manufacturing silicon carbide semiconductor device |
| CN108470775A (en) * | 2017-02-23 | 2018-08-31 | 丰田自动车株式会社 | The manufacturing method of semiconductor device |
| CN109473354A (en) * | 2018-10-10 | 2019-03-15 | 华中科技大学 | A kind of preparation method and product of the drift step recovery diode based on silicon carbide |
| CN112701155A (en) * | 2020-12-29 | 2021-04-23 | 中国科学院微电子所苏州产业技术研究院 | Gallium oxide SBD device and preparation method thereof |
| CN113809071A (en) * | 2021-07-26 | 2021-12-17 | 浙江芯国半导体有限公司 | Circuit comprising schottky diode and related application |
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| JP2003303956A (en) * | 2002-04-11 | 2003-10-24 | Fuji Electric Co Ltd | Silicon carbide semiconductor device and manufacturing method thereof |
| JP2004186660A (en) * | 2002-10-11 | 2004-07-02 | Nippon Inter Electronics Corp | Schottky barrier diode and method for manufacturing the same |
| JP2009177028A (en) * | 2008-01-25 | 2009-08-06 | Toshiba Corp | Semiconductor apparatus |
-
2013
- 2013-09-17 CN CN2013104413776A patent/CN103474478A/en active Pending
Patent Citations (3)
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| JP2003303956A (en) * | 2002-04-11 | 2003-10-24 | Fuji Electric Co Ltd | Silicon carbide semiconductor device and manufacturing method thereof |
| JP2004186660A (en) * | 2002-10-11 | 2004-07-02 | Nippon Inter Electronics Corp | Schottky barrier diode and method for manufacturing the same |
| JP2009177028A (en) * | 2008-01-25 | 2009-08-06 | Toshiba Corp | Semiconductor apparatus |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104616978A (en) * | 2014-12-31 | 2015-05-13 | 国家电网公司 | Silicon-carbide power device terminal structure manufacturing method |
| CN104637793A (en) * | 2014-12-31 | 2015-05-20 | 国家电网公司 | Manufacturing method of terminal structure of silicon carbide device |
| CN108292686A (en) * | 2015-12-02 | 2018-07-17 | 三菱电机株式会社 | Silicon carbide epitaxy substrate and manufacturing silicon carbide semiconductor device |
| CN108292686B (en) * | 2015-12-02 | 2021-02-12 | 三菱电机株式会社 | Silicon carbide epitaxial substrate and silicon carbide semiconductor device |
| JP2017139289A (en) * | 2016-02-02 | 2017-08-10 | トヨタ自動車株式会社 | diode |
| WO2017134509A1 (en) * | 2016-02-02 | 2017-08-10 | Toyota Jidosha Kabushiki Kaisha | Schottky diode |
| CN108470775A (en) * | 2017-02-23 | 2018-08-31 | 丰田自动车株式会社 | The manufacturing method of semiconductor device |
| CN108470775B (en) * | 2017-02-23 | 2021-05-11 | 株式会社电装 | Method for manufacturing semiconductor device |
| CN109473354A (en) * | 2018-10-10 | 2019-03-15 | 华中科技大学 | A kind of preparation method and product of the drift step recovery diode based on silicon carbide |
| CN112701155A (en) * | 2020-12-29 | 2021-04-23 | 中国科学院微电子所苏州产业技术研究院 | Gallium oxide SBD device and preparation method thereof |
| CN113809071A (en) * | 2021-07-26 | 2021-12-17 | 浙江芯国半导体有限公司 | Circuit comprising schottky diode and related application |
| CN113809071B (en) * | 2021-07-26 | 2024-03-29 | 浙江芯国半导体有限公司 | Circuit comprising a schottky diode and related applications |
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Application publication date: 20131225 |
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