CN103472133A - Method for detecting weld root defects through ultrasonic waves - Google Patents
Method for detecting weld root defects through ultrasonic waves Download PDFInfo
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- CN103472133A CN103472133A CN2013104523352A CN201310452335A CN103472133A CN 103472133 A CN103472133 A CN 103472133A CN 2013104523352 A CN2013104523352 A CN 2013104523352A CN 201310452335 A CN201310452335 A CN 201310452335A CN 103472133 A CN103472133 A CN 103472133A
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Abstract
The invention relates to a method for detecting weld root defects through ultrasonic waves, in particular to a method for using a specially-developed tricrystal probe detector for detecting the defects of weld roots and positions near the roots manually. According to the method, due to the fact that the defects of the weld roots and the positions near the roots are detected manually through the tricrystal probe detector, the area defects of the roots can be detected, and the size defects of other parts in a weld joint can also be well detected.
Description
Technical field
The present invention relates to a kind of method of ultrasonic testing root of weld defect, especially relate to a kind of device and manually detection root of weld and the closely method of root defect that comprises three brilliant ultrasonic testing root of weld defects of popping one's head in of special development.
Background technology
At present both at home and abroad the method for harmless volumetric proving has a lot, and that commonly uses mainly contains two large classes: ray and ultrasound wave.And be divided into reflectometry, tandem method, time difference diffraction approach, LLT/TLT method, phase array method etc. in the method for ultrasound wave butt welded seam Inner Defect Testing.
Owing to affected by detected weld reinforcement, misalignment, workpiece shape etc.Above-mentioned several supersonic testing method, the Detection capability of butt welded seam root defect and nearly root and Surface Vertical Area defect, have limitation and shortcoming separately.Concrete reason is: in above-mentioned five kinds of detection methods, (except tandem) disturbed by the structural returns such as detected weld reinforcement, misalignment all strongly, so that root defect ripple and structure ripple differentiation difficulty.To detecting of nearly root and Surface Vertical Area defect: reflectometry and phase array method can only receive the diffraction echo, without receiving reflection echo, echo amplitude a little less than.The tandem method is because of the restriction of two probe physical dimension in addition, and nearly root reflection echo can't receive; Time difference diffraction approach is subject to outside the strong reflection wave interference of bottom surface, also has defect property to judge more difficult; Each probe of LLT/TLT method, for a fixation weld thickness, is used inconvenience especially.Comprehensive above-mentioned known, the equal Shortcomings of area-type defect detection effect of above-mentioned supersonic testing method butt welded seam root and nearly root vertical surface.
Summary of the invention
In order to overcome in above-mentioned ultrasonic testing, the deficiency that detects middle existence of butt welded seam root and nearly root vertical surface area-type defect, meticulous, careful, research repeatedly that the inventor has carried out, find the synthetic probe of three wafers by using special development, manually detect the root of weld and nearly root defect, and utilize the analysis-by-synthesis such as flaw echo demonstration, horizontal location, end ripple variation, can accurately detect the defect of root in weld seam and nearly root, especially the area-type defect on vertical detection surface be had to very high recall rate.
The object of the present invention is to provide the method for ultrasonic testing root of weld defect, the method is used the synthetic probes of three wafers (Fig. 1 (b) is shown in by sonde configuration), butt welded seam is detected, guarantee the recall rate of root and nearly root defect, for estimating tested inside workpiece real quality, provide more scientific testing result.
This detection method comprises the following steps: as shown in Figure 2
(1) by performed standard code (the application take standard JB/T4730.3-2005(Ultrasonic Detection), be example) device and the test block of selection ultrasonic testing root of weld defect, this device comprises ultra-sonic defect detector (the present invention uses the super detector device of A), the synthetic probe of three wafers, wherein, the super detector device of described A use teaching machine and analog machine all can, described test block is CSK-IA and CSK-II/III/IVA.
(2) connect the synthetic probe of three wafers with the super detector device of A, utilize the CSK-IA test block, regulate the linearity of the super detector device of A, the super detector device parameter of every A is set, the instrument linearity refers to the ratio of transverse axis and corresponding sound path on the instrument video screen, the location that linear regulation mainly is used for defect when finding defect (comprises the degree of depth of defect apart from scanning face, defect apart from Front distance the distance etc.), the instrument linearity can be in CSK-IIIA test block adjusted, choosing two hyphen holes of different depth in test block is regulated, the instrument parameter of the super digital flaw detector device of A generally comprises monocrystalline twin crystal pattern, Front distance, frequency probe, beam angle, the velocity of sound, wherein Front distance need be measured in the CSK-IA test block, frequency probe and beam angle are set according to selected probe, for obtaining actual beam angle, available probe is measured in the CSK-IA test block, the velocity of sound is different and different according to acoustic-type, the general velocity of propagation of shear wave in low alloy steel is 3240m/s, the super digital flaw detector device of dissimilar A also has auxiliary parameter setting separately in addition, this paper does not do description to this, and utilize the CSK-II/III/IVA test block, and determine flaw detection sensitivity, at least draw the DAC curve twice, described DAC Drawing of Curve: the one, be connected in parallel and draw as the Single crystal probe of a wafer according to three wafers in the synthetic probe of three wafers, by normal inspection, the 2nd, make emission wafer for emission according to a wafer in the synthetic probe of three wafers, another two wafers are drawn for the double crystal probe that an emission one that receives wafer receives twin lamella, test, and preserve and regulate the parameter set.
(3) tested workpiece is carried out to scanning, the mobile sawtooth pattern by standard code of the synthetic probe of three wafers and horizontal parallel or oblique parallel carrying out, make the synthetic probe of three wafers move forward and backward the product that distance is greater than thickness of workpiece TH and probe shear refraction tangent of an angle value K, i.e. TH * K.
(4) when finding defect, remake all around, corner, around etc. the form scanning, by standard, defect is made to character judgement and grading in conjunction with the DAC curve of Single crystal probe.And carry out written record and the part calibration of defect.
(5) when finding that root of weld defectiveness or suspection defectiveness or root echo are abnormal, the Single crystal probe pattern of the super detector device of A is changed into to the double crystal probe pattern, and (teaching machine also can store a double crystal probe formula more.The inner emission wafer as emission use of the synthetic probe of three wafers must be connected on the emission jack on the super detector device of A), now detection becomes an emission one and receives the double crystal probe pattern.
(6) again to the root defectiveness or suspect defectiveness or scanning is carried out at the abnormal position of root echo, the synthetic probe of three wafers moves forward and backward, and makes displacement be greater than the product of the tangent value K at thickness of workpiece TH and refraction angle, i.e. TH * K.
(7) defect is carried out to character judgement and grading: by analysis-by-synthesis such as flaw echo demonstration, horizontal location, end ripple variations, can accurately detect the defect of root in weld seam and nearly root, can roughly judge direction, size, character of defect etc., then graded, the DAC parameter of curve execution that double crystal probe is made is pressed in described grading.
Preferred scheme of the present invention:
Determine according to examined throat depth at the synthetic probe of three selected wafers shear refraction angle, but be generally in the scope of 36 °～54 °, preferably 45 ° of left and right.
A preferred version of the present invention, tested thickness of workpiece is generally 40～200mm, preferred 60～180mm, more preferably 100～150mm, further preferably 110～130mm, most preferably 120mm.When tested thickness of workpiece is thinner, weld seam is selected the synthetic probe of three large wafers of shear refraction angle, and thicker weld seam is selected the synthetic probe of three little wafers of shear refraction angle.
A preferred version of the present invention, the welding line structure of tested workpiece is divided into the shape that shape that weld reinforcement polishes and weld reinforcement do not polish.The groove type of weld seam is not particularly limited.
A preferred version of the present invention, the depth of defect of tested workpiece is to be generally 15～30mm apart from the root surface, preferred 20～27mm, more preferably 22.5mm, but the inventor finds: and the nearly root defect degree of depth of practice examining is relevant with the size of wafer: the distance of the nearly root of size great discovery of wafer is just greatly; The distance of the nearly root of the little discovery of the size of wafer is just little.
The effect of invention
According to the present invention, by using the synthetic probe of three wafers butt welded seam to carry out integral body, manually detect: when the synthetic probe of three wafers is used as Single crystal probe, during by normal the detection, its effect that detects defect is not less than normal single crystal probe and detects, sometimes slightly excellent; When the synthetic probe of three wafers receives the double crystal probe detection as an emission one, its effect that detects root and nearly root defect is much higher than normal single crystal probe and detects; Particularly butt welded seam root and nearly root and Surface Vertical be bordering on vertical area-type defect, extraordinary Detection capability is arranged.
The accompanying drawing explanation
Fig. 1 a is conventional single crystal probe;
Fig. 1 b is the sonde configuration schematic diagram of the synthetic probe of three wafers;
Fig. 2 is the connection of ultrasonic detection device of the present invention and detects schematic diagram;
Fig. 3 is the process flow diagram that the synthetic probe of use three wafers of the present invention detects;
Fig. 4 is a detection example schematic diagram of a preferred version of the present invention;
Fig. 5 a is the detection schematic diagram that single crystal probe detects application;
Fig. 5 b is the detection schematic diagram that single crystal probe detects application;
Fig. 5 c is the detection schematic diagram that the synthetic probe of three wafers of the present invention detects application;
Fig. 5 d is the detection schematic diagram that the synthetic probe of three wafers of the present invention detects application;
Fig. 6 a is that the present invention detects schematic diagram to the root without the reinforcement weld seam and nearly root;
Fig. 6 b is that the present invention detects schematic diagram to the root without the reinforcement weld seam and nearly root;
Fig. 6 c is that the present invention detects schematic diagram to the root without the reinforcement weld seam and nearly root;
Fig. 7 is that the present invention detects schematic diagram to root and the nearly root that the reinforcement weld seam is arranged;
Fig. 8 is the DAC curve synoptic diagram.
Embodiment
Below in conjunction with accompanying drawing, by embodiment, the present invention is described in detail.Characteristics of the present invention will become more clear, clear and definite along with these descriptions.
Fig. 1 a is conventional single crystal probe A;
Fig. 1 b is the synthetic probe B structural representations of three wafers.As shown in Figure 1a, single probe only has a wafer 1; As shown in Figure 1 b, the synthetic probe of three wafers is that three wafers attach together in a shell, wherein launch emission wafer 11 that ultrasound wave uses and be positioned at the centre of three wafers, it is curved surface self-focusing wafer, focusing distance is relevant to the thickness of tested workpiece, detected pieces thickness is larger, and the depth of focus needed is larger.Front reception wafer 12 and rear reception wafer 13 are connected in parallel and merge into the reception wafer in addition.Putting of three wafers is that angle is consistent substantially, and emission wafer 11 also can two receive the small inclination that wafer 12,13 have 2 degree left and right with other, is beneficial to receive acoustic beam vertical; On height, three wafers are slightly variant, and purpose is that to make the sound wave of three wafers emission enter the workpiece time as far as possible consistent, are conducive to improve after instrument and probe combination in the resolution of depth direction, strengthened defect and structural return separating capacity;
The connection that Fig. 2 is ultrasonic detection device of the present invention, detection schematic diagram.Ultra-sonic defect detector and cable are all to be conventional A type pulse reflection ultra-sonic defect detector with the super detector device 14(of normal A) used while detecting be identical.Probe is the synthetic probes of the present invention's three wafers.Emission wafer 11 is connected with the emission socket of the super detector device of A, receives wafer 12,13 and is connected with the receiver socket of the super detector device 14 of A.When the synthetic probe B of three wafers is used as a wafer probe (this is a kind of brand-new form), it is single probe pattern that the probe of the super detector device of A is selected button, now to transmit and receive socket be parallel form to the probe on instrument, the synthetic probe of three wafers can be considered a wafer probe, i.e. three wafer probe emissions simultaneously and/or simultaneously receive signal.When the probe of the super detector device of A selects button to change two probe pattern into, three wafers become the emission of a wafer probe, two wafer probe receiving modes at once.Thus, by the double mode conversion of such list, two kinds of testing results of existing Single crystal probe and double crystal probe, had again echoed signal clearly, and the recall rate of root and nearly root defect is improved greatly.
Fig. 3 is the process flow diagram that the synthetic probe of three wafers of the present invention detects.From scheming, can find out, testing process of the present invention is draw once when making the DAC curve just more, in addition, when finding that root of weld defectiveness or suspection defectiveness or root echo are abnormal, again single probe pattern of instrument is changed into to two probe patterns and get final product, other step is identical during roughly with conventional sense.
The application's detection method comprises that step is as follows:
(1) the super detector device of selection standard JB/T4730.3-2005, A (model: CTS-9003, Shantou Ultrasonic Electronic Co., Ltd., Guangdong produces), probe is selected 2.5MHz/45, and degree/(the wafer size here is not particularly limited tri-wafer sizes [20 * (4+8+10)], also other wafer size), CSK-IA and CSK-III A are selected in test block.
(2) the super detector device input parameter of A: transverse wave velocity, probe refraction angle, Front distance distance, zero migration and other parameter of using the CSK-IA calibration materials.With the drawn DAC curve of CSK-III A test block.At least draw the DAC curve twice: when the synthetic probe B of three wafers is used as the single Single crystal probe received of single transmit once; While as an emission one, receiving double crystal probe once.Sensitivity is that hole φ 1 * 6-6dB(dB of degree of depth 120mm is called decibel, is sound intensity level unit).
(3) workpiece is carried out to scanning, the mobile form of popping one's head in is by the sawtooth pattern of standard code and horizontal parallel or oblique parallel carrying out, and making to pop one's head in, the mobile width distance is greater than thickness of workpiece TH and the product (TH * K) of the shear refraction tangent of an angle value K that pops one's head in.
(4) when finding defect, remake all around, corner, around etc. the form scanning, by standard, defect is made to character judgement and grading in conjunction with the DAC curve of Single crystal probe.And carry out written record and the part calibration of defect.
(5), when finding root of weld defectiveness or suspecting defectiveness or root echo when abnormal, single probe pattern of the super detector device of A is converted to two probe patterns and now detect and become emission one a reception double crystal probe pattern.At this, it should be noted that, the teaching machine of two probe patterns also can store a two probe formula more.The emission wafer must be connected on the emission jack on instrument.
(6) again to the root defectiveness or suspect defectiveness or scanning is carried out at the abnormal position of root echo, probe moves forward and backward, and makes displacement be greater than the product of thickness of workpiece TH and probe shear refraction tangent of an angle value K, i.e. TH * K.
(7) defect is carried out to character judgement and grading: by analysis-by-synthesis such as flaw echo demonstration, horizontal location, end ripple variations, can accurately detect the defect of the root of weld and nearly root, then graded, the DAC parameter of curve execution that double crystal probe is made is pressed in described grading.
In addition, it should be noted that, by said determination, if when the evaluation result of twice defect is inconsistent, result is carried out grading by a serious side.
Fig. 4 is a detection example schematic diagram of a preferred version of the present invention.Shown in figure 1., 2. two positions, be the single, double probe method detection position of respectively 5mm * 18mm area-type defect being carried out, detection method is carried out according to the content of above-mentioned steps, testing process repeats no more.The material of following butt welded seam and result etc. describe, specific as follows: the material 508 III steel of simulation weld seam, and specification 400 * 40 * 120(120 is thickness, unit is millimeter).Simulated defect is made, and is to use the line cutting of wire diameter 0.18mm to form.Be machined into groove along line of cut, argon arc welding solder up again, then carry out machining, the final degree of depth 95mm (another root face 20mm) that forms, the defect that area is 5mm * 18mm, in order to imitate the bevel for welding of narrow gap welding, make defect and upper and lower surface that the inclination of 2.5 degree be arranged.
Check operative norm: JB/T4730.3-2005
Test block: CSK-IA and CSK-III A
Ultra-sonic defect detector: CTS-9003
The synthetic probe of three wafers: 2.5MHz/45 degree/tri-wafer size 20 * (4+8+10) and 2.5MHz/45 degree/single-chip sizes 18 * 18
DAC curve plotting in this embodiment divide make for three times be single crystal probe once, twice of three wafers probe.Check that sensitivity is hole φ 1 * 6-6dB of degree of depth 120mm.
Detect respectively on the simulation weldment 1., 2. carry out at two positions.Shown in Fig. 4.Testing result is as following table 1
Table 1
As shown in table 1, from the testing result of three groups of probes, when the single probe of normal 45 degree detects, if can not give defect qualitative, it is qualified all being assessed as the I level; And the synthetic double probe method detection of three wafers not only can be easy to judge defect property, with regard to echo amplitude, be also only to be assessed as the III level; 1. and 2. the echo amplitude of position is respectively φ 1 * 6+10dB and φ 1 * 6+11dB as shown in Table 1,2 known by tabling look-up, 1. and 2. the tandem echo amplitude of position is all being sentenced on scrap wire (φ 1 * 6+10dB), in the III district shown in the DAC schematic diagram, 3 known by tabling look-up, this defect should be assessed as the III level, has surpassed the qualified acceptance requirement of I level, is defective defect.Contrast and be not difficult to find out by result, use the synthetic probe of three wafers to detect, butt welded seam root and nearly root defect detect and are very important.
Table 2 is apart from amplitude curve sensitivity
Table 3 quality of weld joint hierarchical table
This DAC curve of testing drafting is to draw and form in the data of the upper actual measurement of test block (CSK-IIIA test block) by probe used and instrument, and this family of curves forms by evaluating line, quantitative line and sentencing scrap wire.The evaluation line is the I district with quantitatively between line, (comprising the evaluation line), quantitative line and sentence between scrap wire that (to comprise quantitative line) be the II district, and sentencing scrap wire and above zone is the III district, as shown in DAC curve synoptic diagram in Fig. 8.
Wherein, table 2 when detecting the workpiece of different-thickness scope corresponding Sensitirity va1ue (the evaluation line, quantitatively line and sentence scrap wire), DAC curve synoptic diagram in Fig. 8 (evaluate line, quantitative line and sentence scrap wire) is on CSK-IIIA test block actual measurement basis, then according to passing through table 2 drafting schematic diagram.
Fig. 5 a to Fig. 5 d is the detection schematic diagram that the synthetic probe B of three wafers of the present invention detects application.
The principle of work of the synthetic probe of three wafers of the present invention detection method is as follows:
1) incident wave of single crystal probe is propagated with being diffused in workpiece with certain angle, while running into heterogeneous interface (being weld defect), will produce diffraction and reflection.Diffracted wave returns to probe with shortest path, and reflection wave equals incident angle reflection with reflection angle, if the direction of defect is perpendicular with the incident acoustic wave direction or near when vertical, and the reflection wave reception of being popped one's head in, thereby discovery defect, as shown in Figure 5 a.
2) when the incident wave direction of single crystal probe and defect direction out of plumb (as the area-type defect with detecting Surface Vertical), the diffracted wave reception of being popped one's head in, reflection wave is to bottom reflection, return detection faces by bottom reflection again, can not be received by probe or received energy a little less than, form undetected or misjudgement, as shown in Figure 5 b.
3) use the synthetic probe of three wafers to be detected the volume type defect of root and nearly root, probe is emission two reception forms, incident wave reflects through volume type blemish surface, return to probe by two paths, one tunnel receives with diffracted wave and the received wafer probe of reflection wave form, one tunnel reflexes to You Cong bottom surface, bottom surface with the reflection wave form and returns to reception wafer probe, thus the defect of detecting, shown in Fig. 5 c.
4) use three wafers to synthesize probe, to root, with closely root and incident wave direction off plumb area-type defect (as the area-type defect with detecting Surface Vertical) are while testing, the diffracted wave of defect directly is received the reception of wafer probe; Flaw echo reflexes to bottom surface and receives the wafer probe from the bottom reflection tieback again, and defect is detected.Because emission wafer probe 2 and to receive the spacing of wafer probe 3 almost nil, so no matter be root opening and nearly root not the area-type defect of the vertical surface of opening can effectively be detected (holding on a large scale corner reflection).This echo path is fully identical with the tandem echo path, shown in Fig. 5 d.
Based on above-mentioned principle of work, the preferred embodiment of the present invention is specifically described.
Fig. 6 a to Fig. 6 c is that the present invention detects schematic diagram to the root without the reinforcement weld seam and nearly root.This detection method is to utilize the application's detecting step to be detected, on concrete steps slightly, below result and determination methods that the root without the reinforcement weld seam and nearly root are detected describe.
More in the situation reality that weld reinforcement is polished, the C level weld seam detection in the JB/T4730-2005 standard, the weld seam detection of nuclear power one-level parts, the weld seam detection of some security staple product, all polish weld reinforcement.The cardinal rule of judgement defect in this kind of check: on display screen, in the position of thickness of workpiece T and the position that is less than T, occur that echo is all Flaw display, be the depth location of root and nearly root echoed signal is arranged is exactly defect, but very little surface noise involves how much special echoes not very interior to echo amplitude.Concrete detailed decision criteria is as follows:
The flaw echo situation has following four kinds substantially, but it should be noted that, so that understand in this instructions the pulse echo that display depth position on display screen is less than to thickness of workpiece T, calls F1; The display depth position is that thickness of workpiece T or the pulse echo that is slightly less than T are called F2; The initial pulse ripple is called T to be begun.
1) as Fig. 6 b-1. as shown in, while in weld seam, there is no defect, only have T beginning+faint bottom surface noise echo on display screen.
2) as Fig. 6 b-2. as shown in, the Bottom echo that T beginning+F1+ is faint is arranged on display screen, be nearly root defectiveness in weld seam.
3) as 6b-3. as shown in, when T beginning+F1+F2 is arranged on display screen, defect situation may two kinds: the one, F1 is nearly root defect, F2 be sound wave through defect reflection to bottom surface, again by the echo of bottom reflection; The 2nd, F1 is nearly root defect, and F2 is root defect.Method of discrimination is horizontal location, and weld seam both sides (180 degree) horizontal location F2 when same point is root defect, otherwise is not defect.
4) as 6b-4. as shown in, when T beginning+F2 is arranged on display screen, F2 is defect, but defect situation may two kinds: the one, F2 is root defect; The 2nd, nearly root has the area-type defect of vertical surface, be sound wave through defect reflection to bottom surface, again by the echo of bottom reflection.This method of discrimination is a kind of is horizontal location, and weld seam both sides (180 degree) horizontal location F2 when same point is root defect, otherwise is exactly nearly root defect.The 2nd, the gain that improves instrument, make F1 that faint appearance be arranged.In this case, echo must be amplitude peak position.
Fig. 7 is that the present invention detects schematic diagram to root and the nearly root that the reinforcement weld seam is arranged.This detection method is to utilize the application's detecting step to be detected, and concrete steps are omitted, below result and determination methods that root that the reinforcement weld seam is arranged and nearly root are detected describe.In figure, be several demonstration echo situations, horizontal location mode in weld seam.It is roughly the same that several defect patterns of the root of weld and nearly root and Fig. 6 a-6c provide.
In the situation that weld reinforcement does not polish, echo exists how much echoed signals to disturb, and the judgement defect is brought to puzzlement.And want to eliminate how much echo in the synthetic probe B design of three wafers, but the geometric configuration of weld seam is different, it is unpractical eliminating geometry signals, but the resolution characteristic of echo truly has suitable raising.Therefore, adopted the detection mode that the reinforcement weld seam is arranged of present embodiment.And the cardinal rule of judgement defect in check: the position at thickness of workpiece T on display screen is all defect with the pulse echo that the position that is less than T occurs! Special workpiece geometries echo and range of geometrical variations ripple are not very interior.
Concrete detailed decision criteria is as follows:
The flaw echo situation is substantially with regard to four kinds:
1) there is no defect in weld seam, display screen has initial pulse ripple and end curved surface to exist reflection echo how much, the display depth position of this geometry signals is slightly larger than thickness of workpiece T(and is called F3), geometry signals judges by horizontal location: find the echo maximum point, measure the horizontal range position, position surpasses the weld seam center, in opposite side (180 degree) location of weld seam, is also the weld seam center, twice location, all at the opposite side of weld seam, just can judge it is how much echoes.As shown in Fig. 7-1., it should be noted that, the inventor finds shear wave vertically or closely impinges perpendicularly on the curved surface place of root of weld reinforcement, in the time of can going, it is shear wave, it while returning, is the wave mode conversion of compressional wave, transformed wave display depth position 0.8T left and right, the position of horizontal location is that near the weld edge near the probe side, its echo amplitude is lower.Its several judgement characteristics are: the probe positions of how much echo maximum points is also the probe positions of modification wave amplitude peak; The echo scope of moving about is very little, probe to move forward and backward distance little; If the modification ripple appears in certain weld seam, the whole piece weld seam has this modification ripple signal substantially so.As shown in Fig. 7-1..In order to be conducive to find root and nearly root defect, the prerequisite of horizontal location must be that instrument is accurately linear; And F3 occurs that the amplitude size of the relative position of time probe and weld seam and F3 is very important.
While 2) T beginning+F1+F3 being arranged on display screen, F1 is nearly root defect in weld seam, and weld seam both sides horizontal location is in same point.As shown in Fig. 7-2..
While 3) T beginning+F1+F2+F3 (F3 likely obscures with F2, and now the F2 amplitude is higher) being arranged on display screen, defect situation may two kinds: the one, F1 is nearly root defect, F2 be sound wave through defect reflection to bottom surface, again by the echo of bottom reflection; The 2nd, F1 is nearly root defect, and F2 is root defect.Method of discrimination is horizontal location, and weld seam both sides (180 degree) horizontal location F2 when same point is root defect, otherwise is not defect.As 7-3. as shown in.
While 4) T beginning+F2+F3 (F3 does not likely have, and now the F2 amplitude is higher) being arranged on display screen, F2 is defect.Two kinds of defect situation possibilities: the one, F2 is root defect; The 2nd, nearly root has the area-type defect of vertical surface, be sound wave through defect reflection to bottom surface, again by the sound echo of bottom reflection.Method of discrimination is a kind of is horizontal location, and weld seam both sides (180 degree) horizontal location F2 when same point is root defect, otherwise is exactly nearly root defect; The 2nd, the gain that improves instrument, make the F1 ripple that faint appearance be arranged.As 7-4. as shown in.
Abovely by preferred embodiment, the present invention has been carried out to exemplary explanation.What but need statement is; these embodiments are only to illustrative explanation of the present invention; protection scope of the present invention is not formed to any restriction; in the situation that do not exceed the present invention's spirit and protection domain; those skilled in the art can carry out various improvement, the of equal value replacement or modification to the technology of the present invention content and embodiment thereof, and these all fall within the scope of protection of the present invention.
Claims (10)
1. the method for a ultrasonic testing root of weld defect, it is characterized in that, the method is to use the device of ultrasonic testing root of weld defect to complete, wherein, the device of ultrasonic testing root of weld defect comprises the synthetic probe of three wafers that are connected by cable and ultra-sonic defect detector, and the synthetic probe of described three wafers is the probe an enclosure three wafer package; The method comprises the following steps:
(1) select device and the test block of ultrasonic testing root of weld defect by performed standard code, wherein, described test block is CSK-IA and CSK-II/III/IVA;
(2) utilize the CSK-IA test block, regulate ultra-sonic defect detector linearity, every UT (Ultrasonic Testing) instrument parameter is set; And utilize the CSK-II/III/IVA test block, and determine flaw detection sensitivity, at least draw the DAC curve twice, preserve simultaneously and regulate the parameter set;
Described DAC Drawing of Curve is Single crystal probe and double crystal probe, described Single crystal probe is the probe using three wafers of encapsulation in the synthetic probe of three wafers as a wafer integral body, and in the synthetic probe of three wafers, three wafers of encapsulation are connected in parallel, check according to a conventional method;
Described double crystal probe is that the synthetic emission one of three wafer set of encapsulation in the synthetic probe of described three wafers is received to double crystal probe, in three wafers one as the emission wafer, another two wafers are as receiving wafer;
(3) tested workpiece is carried out to scanning, the mobile sawtooth pattern by standard code of probe and horizontal parallel or oblique parallel carrying out, move forward and backward apart from being greater than the product of thickness of workpiece TH with probe shear refraction tangent of an angle value K, i.e. TH * K probe;
(4) when finding defect, remake all around, corner, around etc. the form scanning, by standard, defect is made to character judgement and grading in conjunction with the DAC curve of Single crystal probe, and carries out written record and the part calibration of defect;
(5) when finding that root of weld defectiveness or suspection defectiveness or root echo are abnormal, the Single crystal probe pattern of ultra-sonic defect detector is changed into to the double crystal probe pattern, detect and become emission one a reception double crystal probe pattern;
(6) again to the root defectiveness or suspect defectiveness or scanning is carried out at the abnormal position of root echo, probe moves forward and backward, and makes displacement be greater than the product of the tangent value K at thickness of workpiece TH and refraction angle, i.e. TH * K;
(7) defect is carried out to character judgement and grading: by analysis-by-synthesis such as flaw echo demonstration, horizontal location, end ripple variations, can accurately detect the defect of root in weld seam and nearly root, can roughly judge direction, size, the character of defect, then graded, the DAC parameter of curve execution that double crystal probe is made is pressed in described grading.
2. the method for ultrasonic testing root of weld defect according to claim 1, is characterized in that, the synthetic probe of three selected wafers shear refraction angle is 36 °～54 °.
3. the method for ultrasonic testing root of weld defect according to claim 2, is characterized in that, the synthetic probe of three selected wafers shear refraction angle is 45 °.
4. the method for ultrasonic testing root of weld defect according to claim 1, is characterized in that, tested thickness of workpiece is 40～200mm.
5. the method for ultrasonic testing root of weld defect according to claim 1, is characterized in that, the depth of defect of tested workpiece is 15～30mm apart from the root surface.
6. the method for ultrasonic testing root of weld defect according to claim 7, is characterized in that, the depth of defect of tested workpiece is 22.5mm apart from the root surface.
7. the method for ultrasonic testing root of weld defect according to claim 1, is characterized in that, the structure of the weld seam of tested workpiece is the shape that the shape that polishes of weld reinforcement and weld reinforcement do not polish.
8. the method for ultrasonic testing root of weld defect according to claim 1, is characterized in that, ultra-sonic defect detector is the super detector device of A.
9. the method for ultrasonic testing root of weld defect according to claim 1, is characterized in that, the super detector device of A is teaching machine or analog machine.
10. the device of ultrasonic testing root of weld defect, it is described in above-mentioned claim 1-9.
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| CN113030272B (en) * | 2021-02-08 | 2024-04-09 | 中国核电工程有限公司 | Advanced ultrasonic detection method and system for nuclear component welding joint |
| CN114062508A (en) * | 2021-11-16 | 2022-02-18 | 中车唐山机车车辆有限公司 | Welding seam detection method |
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