CN103512953B - Adopt multi-probe supersonic testing method - Google Patents

Adopt multi-probe supersonic testing method Download PDF

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CN103512953B
CN103512953B CN201310450041.6A CN201310450041A CN103512953B CN 103512953 B CN103512953 B CN 103512953B CN 201310450041 A CN201310450041 A CN 201310450041A CN 103512953 B CN103512953 B CN 103512953B
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wafer
crystal sheet
probe
handed crystal
wedge
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CN103512953A (en
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王佐森
赛鹏
周海波
朱青山
邓显余
夏珊
余金涛
赵晓华
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Harbin Electric Group Qinhuangdao Heavy Equipment Co Ltd
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Harbin Electric Group Qinhuangdao Heavy Equipment Co Ltd
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Abstract

The present invention openly adopts multi-probe supersonic testing method, the method is undertaken by Multi probe device, and Multi probe device comprises: shell, left wedge, middle wedge, right wedge, left-handed crystal sheet, left damping block, left cable, Ultrasound Instrument, middle wafer, middle damping block, middle cable, right-handed crystal sheet, right damping block, right cable, sound insulation groove and anechoic trap; The method comprising the steps of: (1) is corrected this device by CSK-I A and CSK-III A test block; And in Ultrasound Instrument, the parameters of three wafers is inputted according to correction result; The flaw detection sensitivity of this device is determined by CSK-III A test block; (2) check that whether the sensitivity of inner three wafers of this device this device when mobile is normal, whether alarm condition is normal; (3) this device is used to test to examined workpiece: during inspection from one, edge wafer; (4) when this device finds after defect, with the wafer that echo amplitude is the highest, aim at defect carry out all around, corner and around scanning.

Description

Adopt multi-probe supersonic testing method
Technical field
The invention belongs to A and surpass the manual detection field of reflectometry, it relates to the multi-probe supersonic testing method of employing.
Background technology
Ultrasound wave is frequency higher than the sound wave of 20000 hertz, its good directionality, and penetration capacity is strong, is easy to obtain the acoustic energy comparatively concentrated, and in water transmission distance, can be used for finding range, tests the speed, cleans, welds, rubble, sterilizing etc.In medical science, military affairs, industry, agriculturally there is a lot of application.Ultrasound wave is gained the name because its lower-frequency limit approximates greatly the upper limit of hearing of people.
At present, when ultrasound wave A surpasses reflectometry manual inspections, be all use Traditional Man method of detection, i.e. the detection of a people, a machine, a probe.When a weld seam needs to adopt the probe of multiple angles to test, then need a few individual to carry out detecting or people repeats detection several times to this weld seam simultaneously, just can complete the inspection of weld seam.As being exactly performing U.S. ASME standard, performing French RCCM standard, perform the detection of China JB/T4730.3-2005C level, same weld seam will use the two or three even probe of four kinds of angles to test respectively, just can complete inspection.Consume a large amount of human and material resources and valuable time, detect loaded down with trivial details especially.
The relevant multiple probe detector existed in existing patent, as Chinese patent application CN201120263270.3 Twin-lamellae K 1 probe, in the disclosed probe of this patent, employ dual probe, but this kind of probe uses pugging among wafers, add the cost of this kind of probe; The pitch angle of the wafer simultaneously in this kind of probe is fixed, and makes this kind of probe apply underaction; The easily generation that is limited in scope of dual probe detection is undetected.
Due to the problems referred to above, the present inventor carries out critical to existing probe technologies and analyzes, so as to produce have that structure is simple, cost is low, use is flexible, inspected area Datong District time can the disposable multi-probe supersonic testing method of employing of simultaneously detecting a flaw from multiple angle.
Summary of the invention
In order to solve the problem, present inventor has performed and study with keen determination, found that: undertaken by the Multi probe device after improving, described Multi probe device comprises: shell, left wedge, middle wedge, right wedge, left-handed crystal sheet, left damping block, middle wafer, middle damping block, right-handed crystal sheet, right damping block and Ultrasound Instrument, wherein, arrange the groove that insulates against sound between left-handed crystal sheet and middle wafer, arrange sound insulation groove between middle wafer and right-handed crystal sheet, the front end of left-handed crystal sheet, middle wafer and right-handed crystal sheet three arranges anechoic trap respectively; This method of inspection comprises the following steps: (1) is corrected this device by CSK-I A and CSK-III A test block; And in Ultrasound Instrument, the parameters of three wafers is inputted according to correction result; The flaw detection sensitivity of this device is determined by CSK-III A test block; (2) check that whether the sensitivity of inner three wafers of this device this device when mobile is normal, whether alarm condition is normal; (3) this device is used to test to examined workpiece: during inspection from one, edge wafer; (4) when this device finds after defect, with the wafer that echo amplitude is the highest, aim at defect carry out all around, corner and around scanning, more respectively character is made to defect in conjunction with respective DAC curve by standard, size judges and defect is graded.Thus complete the present invention.
The object of the present invention is to provide following aspect:
The first, adopt multi-probe supersonic testing method, it is characterized in that:
The method applies following Multi probe device, and described Multi probe device comprises:
Shell 2, its bottom transparent, the bottom surface of its inside is arranged respectively transparent left wedge, transparent middle wedge and transparent right wedge,
Left-handed crystal sheet 5a, its front is affixed on left wedge inclined-plane, and left chip back surface and left damping block 6a are affixed, and left-handed crystal sheet is connected with Ultrasound Instrument 1 by left cable 3a,
Middle wafer, its front is affixed on middle wedge inclined-plane, and middle chip back surface and middle damping block are affixed, and middle wafer is connected with Ultrasound Instrument by middle cable 3b,
Right-handed crystal sheet, its front is affixed on right wedge inclined-plane, and right chip back surface and right damping block are affixed, and right-handed crystal sheet is connected with Ultrasound Instrument by right cable 3c,
Wherein, arrange the groove that insulates against sound, arrange sound insulation groove between middle wafer and right-handed crystal sheet between left-handed crystal sheet and middle wafer, the front end of left-handed crystal sheet, middle wafer and right-handed crystal sheet three wafers arranges anechoic trap respectively;
This method of inspection comprises the following steps:
(1) by CSK-I A and CSK-III A test block, this device is corrected: the transverse wave velocity value using CSK-I A test block calibration materials, and by CSK-I A test block, the angle of inclination of three wafers, zero migration, Front distance distance are proofreaded, and be input in Ultrasound Instrument by calibration values; Determine the flaw detection sensitivity of each wafer in this device by CSK-III A test block and preserve;
(2) flaw detection sensitivity and the panalarm of this device three wafers of this device inside when mobile is checked;
(3) use this device to test to detected test specimen: during inspection from one, edge wafer, one, described edge wafer be this device when starting to check at first near the wafer of test block; One, described edge wafer is left-handed crystal sheet or right-handed crystal sheet, determines according to scanning direction during inspection;
(4) when this device finds after defect 11, with the wafer that echo amplitude is the highest, aim at defect carry out all around, corner and around scanning, wherein, these four kinds of scanning modes are that standard JB4730.3-2005 specifies four kinds of scanning modes (as shown in Figure 7); In conjunction with three wafers, flaw detection sensitivity makes character to defect respectively by standard separately, size judges and defect is graded again.
The second, the multi-probe supersonic testing method of the employing according to above-mentioned first aspect, is characterized in that: in left-handed crystal sheet, middle wafer and right-handed crystal sheet three wafers, between each wafer and enclosure bottom, the size of angle is adjustable.
Three, the multi-probe supersonic testing method of the employing according to above-mentioned first aspect, it is characterized in that: when checking in step (3) from one, edge wafer, it is that sawtooth pattern is carried out with the parallel or tiltedly parallel of transverse direction that this device moves pattern, and the described sawtooth pattern i.e. route of this device is fold-line-shaped; Described transverse direction is parallel refer to when weld reinforcement polishes, Multi probe device is put parallel with bead direction in welded joints, for detecting weld seam transverse defect; The scanning direction that oblique parallel finger is popped one's head in when weld reinforcement does not polish becomes the angle of 10 ~ 20 ° with the direction of weld seam, each direction of travel of Multi probe device is parallel to each other.Concrete diagram is shown in Fig. 8 a and 8b.
Four, the multi-probe supersonic testing method of the employing according to above-mentioned first aspect, it is characterized in that: this device moves forward and backward the product that width distance is greater than the tangent value at detected specimen thickness and larger refraction angle in step (3), described larger refraction angle is the refraction angle of the wafer generation that in three wafers, refraction angle is second largest.
Five, the multi-probe supersonic testing method of the employing according to above-mentioned first aspect, is characterized in that: the material bottom this crust of the device is organic glass.
Six, Multi probe device, it is according to any one of above-mentioned first aspect to the 5th aspect.
According to the multi-probe supersonic testing method of employing provided by the invention, have that structure is simple, cost is low, use is flexible, inspected area Datong District time can disposablely detect a flaw from multiple angle simultaneously; The method specifically has following beneficial effect:
The first, this device employs the probe of several angle combinations wafer composition, just can complete each Autonomous test scanning of multiple angle in scanning once detects, and makes inspection work efficiency at double or the raising of several times;
The second, this device simultaneously multi-angle with the use of, once inspection just can be carried out multi-angle to same defect and mutually verifies, qualitative to defect, provides more information;
Three, because several wafer set merges row, increasing wafer width, this device each in inspection is moved cover to increase, decreasing cause because covering deficiency undetected;
Four, because several wafer coexists, spread by acoustic beam and form angle of a roof reflection, some inclination defect can be detected;
Five, the method is applicable to perform the product of U.S. ASME standard, JB/T4730.3-2005C level detects product, the product performing French RCCM standard detection or have Multi probe to check the occasion needed.
Accompanying drawing explanation
Fig. 1 illustrates the working state figure adopting multi-probe supersonic testing method according to the preferred embodiment of the present invention;
Fig. 2 illustrates the structural representation adopting Multi probe device in multi-probe supersonic testing method according to the preferred embodiment of the present invention;
Fig. 3 illustrates the left view adopting Multi probe device in multi-probe supersonic testing method according to the preferred embodiment of the present invention;
Fig. 4 illustrates and adopts multi-probe supersonic testing method roof reflector schematic diagram according to the preferred embodiment of the present invention;
Fig. 5 illustrates the schematic diagram adopting multi-probe supersonic testing method to be detected test specimen according to the preferred embodiment of the present invention;
Fig. 6 illustrates that conventional A surpasses the schematic diagram of reflectometry pick-up unit;
Fig. 7 illustrates four kinds of determining defects mode schematic diagram
Fig. 8 a illustrates oblique parallel mode schematic diagram in the mobile pattern adopting multi-probe supersonic testing method according to the preferred embodiment of the present invention;
Fig. 8 b illustrates and adopts horizontal parallel mode schematic diagram in the mobile pattern of multi-probe supersonic testing method according to the preferred embodiment of the present invention;
Fig. 9 illustrates the Multi probe apparatus structure schematic diagram adopting multi-probe supersonic testing method according to the preferred embodiment of the present invention;
Figure 10 illustrates and adopts multi-probe supersonic testing method Multi probe apparatus structure schematic diagram according to the preferred embodiment of the present invention.
Drawing reference numeral illustrates:
1-Ultrasound Instrument
2-shell
The left cable of 3a-
Cable in 3b-
The right cable of 3c-
The left wedge of 4a-
5a-left-handed crystal sheet
The left damping block of 6a-
7-insulates against sound groove
8-anechoic trap
11-defect
13-A type ultra-sonic defect detector
The mono-probe of 14-
15-is detected test specimen
Embodiment
Below by the present invention is described in detail, the features and advantages of the invention will illustrate along with these and become more clear, clear and definite.
Word " exemplary " special here means " as example, embodiment or illustrative ".Here need not be interpreted as being better than or being better than other embodiment as any embodiment illustrated by " exemplary ".Although the various aspects of embodiment shown in the drawings, unless otherwise indicated, accompanying drawing need not be drawn in proportion.
According in a preferred embodiment of the present invention, as shown in figures 1-5, provide and adopt multi-probe supersonic testing method, the method applies following Multi probe device, and described Multi probe device comprises:
Shell 2, its bottom transparent, the bottom surface of its inside is arranged respectively transparent left wedge, transparent middle wedge and transparent right wedge,
Left-handed crystal sheet 5a, its front is affixed on left wedge inclined-plane, and left chip back surface and left damping block 6a are affixed, and left-handed crystal sheet is connected with Ultrasound Instrument 1 by left cable 3a,
Middle wafer, its front is affixed on middle wedge inclined-plane, and middle chip back surface and middle damping block are affixed, and middle wafer is connected with Ultrasound Instrument by middle cable 3b,
Right-handed crystal sheet, its front is affixed on right wedge inclined-plane, and right chip back surface and right damping block are affixed, and right-handed crystal sheet is connected with Ultrasound Instrument by right cable 3c,
Wherein, arrange the groove that insulates against sound, arrange sound insulation groove between middle wafer and right-handed crystal sheet between left-handed crystal sheet and middle wafer, the front end of left-handed crystal sheet, middle wafer and right-handed crystal sheet three wafers arranges anechoic trap respectively;
This method of inspection comprises the following steps:
(1) by CSK-I A and CSK-III A test block, this device is corrected: the transverse wave velocity value using CSK-I A test block calibration materials, and by CSK-I A test block, the angle of inclination of three wafers, zero migration, Front distance distance are proofreaded, and be input in Ultrasound Instrument by calibration values; Determine the flaw detection sensitivity of each wafer in this device by CSK-III A test block and preserve, drawing DAC curve by flaw detection sensitivity;
(2) flaw detection sensitivity and the panalarm of this device three wafers of this device inside when mobile is checked;
(3) this device is used to test to detected test specimen: during inspection from one, edge wafer;
(4) after this device finds defect, with the wafer that echo amplitude is the highest, aim at defect carry out all around, corner and around scanning, then in conjunction with three wafers separately flaw detection sensitivity by standard respectively to defect make character, size judge and defect grade.
Wherein, tradition single probe detection method uses device as shown in Figure 6, this device is connected with an A-mode ultrasonic wave inspection instrument 13 by a single probe 14, this unit efficiency is low, detection method described in the present invention uses Multi probe device as shown in Figure 1, and this Multi probe device improves detection efficiency, increases sensing range.
Wherein, in the present invention, three wafers launch incident wave respectively, with intermittent pulse pattern, and to propagate in respective angle and the detected test specimen of diffusion, will produce diffraction and reflection and with shape transformation when incident wave runs into heterogeneous interface (defect).Diffracted wave returns wafer with shortest path, and reflection wave equals incident angle reflection with reflection angle, if the direction of defect is perpendicular with incident wave direction or near vertical time, by wafer receipt after diffracted wave and reflection wave superpose, thus discovery defect.When several wafer package is in a shell, when in detected test specimen, ultrasonic propagation is to certain distance, diffusion due to acoustic beam makes several roads ultrasound wave to meet, superposition principle by ripple: the vibration of the particle that meets is each train wave vibrations synthesis, particle displacement is the vector of each train wave displacement, after meeting, each row sound wave still keeps oneself original frequency, wavelength, direction of vibration continues to propagate, just as not running into other ripple, hyperacoustic independence that Here it is, so mutually do not interfere when several roads ultrasound wave detects and affect detection simultaneously, each passage echo display is very clear, not disorderly.
In one preferred embodiment, as shown in Figure 2, transparent bottom described shell 2, here, outer casing bottom material is preferably organic glass; Enclosure is provided with acoustic absorbant;
Wherein, left wedge, middle wedge and right wedge is installed successively by straight line from left to right bottom shell 2; Described left wedge, middle wedge and right wedge are transparent, and three's shape is identical, it is leg-of-mutton prism that left wedge, middle wedge and right wedge three are xsect, what wedge can change that ultrasound wave enters wafer enters angle, by arranging left wedge, middle wedge and right wedge, this device coverage can be made to increase, improve the dirigibility of this device.
In concrete example, the inclined-plane of described left wedge and enclosure bottom angle are 45 degree; The inclined-plane of described middle wedge and enclosure bottom angle 60 degree; The inclined-plane of described right wedge and enclosure bottom angle 70 degree.
In one preferred embodiment, as shown in Figure 2, left-handed crystal sheet is affixed on the inclined-plane of left wedge, middle wafer is affixed on the inclined-plane of middle wedge, right-handed crystal sheet be affixed on the inclined-plane of right wedge; Left-handed crystal sheet described here, the material of middle wafer and right-handed crystal sheet three wafers are identical, and the size of three wafers is 13mm × 13mm, and frequency is 2.5MHz; Described wafer is used for internal loopback ultrasound wave
Wherein, left-handed crystal sheet is connected with Ultrasound Instrument 1 by left cable 3a; Middle wafer is connected with Ultrasound Instrument by middle cable, and right-handed crystal sheet is connected with Ultrasound Instrument by right cable, and described left cable, middle cable and right cable three cables are identical, are 75 Ω concentric cable.
Wherein, because this device three wafers are different from the angle of enclosure bottom, therefore this device is when detecting detected test specimen, easy generation roof reflector, easily like this some unconspicuous defects detected, the detectability of this device is improved, described roof reflector as shown in Figure 4, when the ultrasound wave that 45 degree of wafers send runs into defect, according to wave reflection principle, the ultrasound wave that 45 degree of wafers send can not return along former road, be refracted to the wafer place at 60 degree of angles, outside the scope that the wafer at 60 degree of angles can receive, and then accepted by the wafer at 60 degree of angles or 70 degree of angle wafers, some unconspicuous defects are made to be detected like this, improve the detectability of the method.
In further preferred embodiment, because the angle between the inclined-plane of three wedges and enclosure bottom is adjustable, therefore the angle of three wafers and outer casing bottom is also adjustable, which increase the dirigibility of this device, make this device can according to the needs of actual conditions, three angles between wafer and enclosure bottom are regulated.
In one preferred embodiment, as shown in Figure 2, left damping block is affixed on left chip back surface, middle damping block is affixed on middle chip back surface, right damping block is affixed on right chip back surface, described left damping block, middle damping block are identical with the material of right damping block three damping blocks, are conventional damping block.
In one preferred embodiment, as shown in Figure 2, sound insulation groove 7 is provided with between adjacent wafer, anechoic trap 8 is provided with in the front end of each wafer, non-interference between the ultrasound wave that sound insulation groove 7 makes each wafer launch, anechoic trap 8 eliminates the reflection echo that wafer is supervened when producing refraction wave, makes reflection echo not disturb flaw detection.Sound insulation groove and anechoic trap can make this device while improving soundproof effect, reduce the cost of production cost, sound insulation groove and anechoic trap lower than common sound insulating material, and the cost of this device is reduced.
In one preferred embodiment, as shown in Figure 9, step (1) uses the transverse wave velocity value of CSK-I A test block calibration materials, and is proofreaded by CSK-I A test block the angle of inclination of three wafers, zero migration, Front distance distance, and be input in Ultrasound Instrument by calibration values; Determine the flaw detection sensitivity of each wafer in this device by CSK-III A test block and preserve;
Wherein, the transverse wave velocity value of described material refers to the velocity of propagation of ultrasound wave in examined workpiece; The velocity of sound of middle finger in steel herein.
Zero migration be wafer launch ultrasound wave to the time between Multi probe device and detected surface of the work, the travel-time T2 of route as shown in Figure 9.Only have and obtain zero shift accurately, ultrasound wave could accurately be located.
Described Front distance distance is wafer acoustic beam central point and the incidence point distance L1 to Multi probe crust of the device front bottom edge, as shown in Figure 9.
In one preferred embodiment, step (3) this device moves forward and backward the product that width distance is greater than the tangent value at detected specimen thickness and larger refraction angle, and formula is as follows:
This device moves forward and backward width distance >TH × K, and wherein, TH is detected specimen thickness, and K is the tangent value at larger refraction angle;
Here, larger refraction angle is the wafer in three wafers with second largest refraction angle, is preferably the middle wafer becoming 60 degree of angles with enclosure bottom; Describedly to move forward and backward as the movement along X-direction in such as Fig. 5.Refraction angle refers to the angle between wave beam and detected workpiece normal.As shown in Figure 10.Only have and can obtain maximum reflection ripple when wave beam is vertical with defect direction, and the direction of defect is diversified, therefore needs to adopt the ultrasound beamformer at multiple refraction angle to detect.In ASME standard, General Requirements adopts 0 °, the probe at 45 °, 60 °, 70 ° refraction angles.
In one preferred embodiment, in step (4), when this device finds that the detected time has defect, this device detects this defect conversion different angles.For a directive defect, when only having beam direction vertical with defect direction, obtain maximum echo amplitude.For the defect of different directions, the wafer obtaining maximum echo amplitude is different.With the wafer that echo amplitude is the highest, aim at defect do all around, corner, around etc. form scanning, determine the size of defect, direction and character.Again in conjunction with DAC curve by standard, each wafer makes grading to defect respectively.By this step, make the method when detecting detected test specimen, efficiency improves, and accuracy improves, and makes testing more careful, avoids undetected.
Embodiment 1
Detected test specimen is set, the mother metal material 20MnMoR steel of its weld seam, specification 1000 × 320 × 62.This weld seam adopts JB/T4730.3-2005 standard, CSK-I A and CSK-III A test block.
Use conventional A to surpass reflectometry pick-up unit to detect detected test specimen, inspection sensitivity φ 1 × 6-6dB, needs inspection three times, finds that two place's defects are as shown in table 1 below:
Table 1
Probe Defect is the degree of depth/amplitude 1. Defect is the degree of depth/amplitude 2.
450 35/φ1×6+4dB 34/φ1×6-2dB
600 35/φ1×6+5dB 34/φ1×6+4dB
700 35/φ1×6+4dB 34/φ1×6+7dB
Use Multi probe device of the present invention to detect detected test specimen, inspection sensitivity φ 1 × 6-6dB, only need detect once, testing result is as following table 2:
Table 2
Probe Defect is the degree of depth/amplitude 1. Defect is the degree of depth/amplitude 2.
450 35/φ1×6+3dB 34/φ1×6-2dB
600 35/φ1×6+5dB 34/φ1×6+4dB
700 35/φ1×6+4dB 34/φ1×6+8dB
Contrasted from above-mentioned table 1 and table 2, conventional A surpass reflectometry detect with the present invention same defect is detected to same detected test specimen time, two kinds of testing results almost do not have difference, and small echo amplitude difference is negligible.
Wherein, the alignment time adopting conventional A to surpass each probe of reflection wave is about 5 minutes, and each probe scanning time is about 35 minutes, then need 120 minutes whole detection time.And when adopting Multi probe device the multi-probe alignment time be about 35 minutes, the scanning time is 45 minutes, and whole detection time is 80 minutes.Although therefore the visible Multi probe device alignment time is longer, the scanning time is short, whole weld seam detection time decreased 1/3.To long weld seam and the large weld seam of thickness, surpassing reflectometry relative to conventional A multi-probe detection time will shorten detection time greatly.
According to the multi-probe supersonic testing method of employing provided by the invention, have that structure is simple, cost is low, use is flexible, inspected area Datong District time can disposablely detect a flaw from multiple angle simultaneously; The method specifically has following beneficial effect:
The first, this device employs the probe of several angle combinations wafer composition, just can complete each Autonomous test scanning of multiple angle in scanning once detects, and makes inspection work efficiency at double or the raising of several times;
The second, this device simultaneously multi-angle with the use of, once inspection just can be carried out multi-angle to same defect and mutually verifies, qualitative to defect, provides more information;
Three, because several wafer set merges row, increasing wafer width, this device each in inspection is moved cover to increase, decreasing cause because covering deficiency undetected;
Four, because several wafer coexists, spread by acoustic beam and form angle of a roof reflection, some inclination defect can be detected;
Five, the method is applicable to perform the product of U.S. ASME standard, JB/T4730.3-2005C level detects product, the product performing French RCCM standard detection or have Multi probe to check the occasion needed.
More than joint embodiment and exemplary example are to invention has been detailed description, but these explanations can not be interpreted as limitation of the present invention.It will be appreciated by those skilled in the art that when not departing from spirit and scope of the invention, can carry out multiple equivalencing, modification or improvement to technical solution of the present invention and embodiment thereof, these all fall within the scope of the present invention.Protection scope of the present invention is as the criterion with claims.

Claims (5)

1. adopt multi-probe supersonic testing method, it is characterized in that:
The method applies following Multi probe device, and described Multi probe device comprises:
Shell (2), transparent bottom it, the bottom surface of its inside is arranged respectively transparent left wedge, transparent middle wedge and transparent right wedge,
Left-handed crystal sheet (5a), its front is affixed on left wedge inclined-plane, and left chip back surface and left damping block (6a) are affixed, and left-handed crystal sheet is connected with Ultrasound Instrument (1) by left cable (3a),
Middle wafer, its front is affixed on middle wedge inclined-plane, and middle chip back surface and middle damping block are affixed, and middle wafer is connected with Ultrasound Instrument by middle cable (3b),
Right-handed crystal sheet, its front is affixed on right wedge inclined-plane, and right chip back surface and right damping block are affixed, and right-handed crystal sheet is connected with Ultrasound Instrument by right cable (3c),
Wherein, arrange the groove (7) that insulates against sound, arrange the groove (7) that insulates against sound between middle wafer and right-handed crystal sheet between left-handed crystal sheet and middle wafer, the front end of left-handed crystal sheet, middle wafer and right-handed crystal sheet three wafers arranges anechoic trap (8) respectively;
This method of inspection comprises the following steps:
(1) by CSK-I A and CSK-III A test block, this device is corrected: the transverse wave velocity value using CSK-I A test block calibration materials, and by CSK-I A test block, the angle of inclination of three wafers, zero migration, Front distance distance are proofreaded, and be input in Ultrasound Instrument by calibration values; Determine the flaw detection sensitivity of each wafer in this device by CSK-III A test block and preserve;
(2) flaw detection sensitivity and the panalarm of this device three wafers of this device inside when mobile is checked;
(3) this device is used to test to detected test specimen (15): during inspection from one, edge wafer, one, described edge wafer be this device when starting to check at first near the wafer of test block, one, described edge wafer is left-handed crystal sheet or right-handed crystal sheet;
(4) after this device finds defect, with the wafer that echo amplitude is the highest, aim at defect carry out all around, corner and around scanning, then in conjunction with three wafers separately flaw detection sensitivity by standard respectively to defect make character, size judge and defect grade.
2. the multi-probe supersonic testing method of employing according to claim 1, is characterized in that: in left-handed crystal sheet, middle wafer and right-handed crystal sheet three wafers, between each wafer and enclosure bottom, the size of angle is adjustable.
3. the multi-probe supersonic testing method of employing according to claim 1, is characterized in that: when checking in step (3) from one, edge wafer, and it is that sawtooth pattern is carried out with the parallel or tiltedly parallel of transverse direction that this device moves form.
4. the multi-probe supersonic testing method of employing according to claim 1, it is characterized in that: in step (3), this device moves forward and backward the product that width distance is greater than the tangent value at detected specimen thickness and larger refraction angle, described larger refraction angle is the refraction angle of the wafer generation that in three wafers, refraction angle is second largest.
5. the multi-probe supersonic testing method of employing according to claim 1, is characterized in that: the material bottom this crust of the device is organic glass.
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CN2444242Y (en) * 2000-09-08 2001-08-22 武进市鸣凰电子器材厂 Tricrystal piece combined probe of ultrasonic inspection for wheel axle
CN202066838U (en) * 2011-03-03 2011-12-07 中国石油天然气集团公司 Ultrasonic dually-oblique probe for welding seam detection
CN202533412U (en) * 2012-04-18 2012-11-14 武汉钢铁(集团)公司 Adjustable probe box for probes
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