CN103472133B - The method of ultrasonic testing root of weld defect - Google Patents
The method of ultrasonic testing root of weld defect Download PDFInfo
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- CN103472133B CN103472133B CN201310452335.2A CN201310452335A CN103472133B CN 103472133 B CN103472133 B CN 103472133B CN 201310452335 A CN201310452335 A CN 201310452335A CN 103472133 B CN103472133 B CN 103472133B
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Abstract
The present invention relates to a kind of method of ultrasonic testing root of weld defect, especially relate to and a kind ofly use three of special development brilliant probe detector, manually detect the method for the root of weld and nearly root defect.According to the present invention, by using three brilliant probe detector, butt welded seam root and nearly root defect manually detect, and it not only can detect the area-type defect of root, and in weld seam, the volume flaw at other position also has good Detection capability.
Description
Technical field
The present invention relates to a kind of method of ultrasonic testing root of weld defect, especially relate to a kind of device of ultrasonic testing root of weld defect and the method for the manual detection root of weld and nearly root defect that comprise three brilliant probes of special development.
Background technology
The method of harmless volumetric proving has a lot both at home and abroad at present, and conventional mainly contains two large classes: ray and ultrasound wave.And in the method for ultrasound wave butt welded seam Inner Defect Testing, be divided into reflectometry, tandem method, time difference diffraction approach, LLT/TLT method, phase array method etc.
Owing to affecting by detected weld reinforcement, misalignment, workpiece shapes etc.Above-mentioned several supersonic testing method, butt welded seam root defect and the Detection capability of nearly root Area defect vertical with surface, have respective limitation and shortcoming.Concrete reason is: in above-mentioned five kinds of detection methods, (except tandem) is disturbed by the structural returns such as detected weld reinforcement, misalignment all strongly, so that root defect ripple and structure ripple distinguish difficulty.To detecting of nearly root Area defect vertical with surface: reflectometry and phase array method can only receive diffraction echo, without receiving reflection echo, echo amplitude is more weak.In addition tandem method is because of the restriction of two probe physical dimension, and nearly root reflection echo cannot receive; Time difference diffraction approach, by outside the strong reflection wave interference of bottom surface, also has defect property to judge more difficult; Each probe of LLT/TLT method, for a fixation weld thickness, uses inconvenience especially.Comprehensive above-mentioned known, the equal Shortcomings of area-type defect detection effect of above-mentioned supersonic testing method butt welded seam root and nearly root vertical surface.
Summary of the invention
In order to overcome in above-mentioned ultrasonic testing, the deficiency detecting middle existence of butt welded seam root and nearly root vertical surface area type defect, present inventor has performed meticulous, careful, study repeatedly, find the wafer synthesis probe by using special development, the manual detection root of weld and nearly root defect, and utilize flaw echo display, horizontal location, end ripple change etc. comprehensively to analyze, the defect of root and nearly root in weld seam can accurately be detected, especially have very high recall rate to the area-type defect on vertical detection surface.
The object of the present invention is to provide the method for ultrasonic testing root of weld defect, the method uses wafer synthesis probe (Fig. 1 (b) is shown in by sonde configuration), butt welded seam detects, guaranteeing the recall rate of root and nearly root defect, providing more scientific testing result for evaluating the inner real quality of examined workpiece.
This detection method comprises the following steps: as shown in Figure 2
(1) specify (the application is for standard JB/T4730.3-2005(Ultrasonic Detection) by performed standard) select device and the test block of ultrasonic testing root of weld defect, this device comprises ultra-sonic defect detector (the present invention uses A to surpass detector device), wafer synthesis probe, wherein, described A surpasses detector device and uses teaching machine and analog machine, and described test block is CSK-IA and CSK-II/III/IVA.
(2) surpass detector device with A and connect wafer synthesis probe, utilize CSK-IA test block, A is regulated to surpass the linear of detector device, every A is set and surpasses detector device parameter, instrument linearly refers to the ratio of transverse axis and corresponding sound path on instrument video screen, linear regulation is mainly used for defect location when finding defect (comprises the degree of depth of defect apart from scanning face, defect is apart from the distance etc. of Front distance), instrument linearly can regulate in CSK-IIIA test block, two hyphen holes that test block is chosen different depth regulate, the instrument parameter that A surpasses digital flaw detector device generally comprises monocrystalline twin crystal pattern, Front distance, frequency probe, beam angle, the velocity of sound, wherein Front distance need measure in CSK-IA test block, frequency probe and beam angle set according to selected probe, for obtaining actual beam angle, available probe measures in CSK-IA test block, the velocity of sound is different according to acoustic-type difference, the velocity of propagation of general shear wave in low alloy steel is 3240m/s, A dissimilar in addition surpasses digital flaw detector device and also has respective auxiliary parameter to arrange, herein this is not described, and utilize CSK-II/III/IVA test block, determine flaw detection sensitivity, at least draw twice DAC curve, described DAC Drawing of Curve: one is that the Single crystal probe be connected in parallel as a wafer according to three wafers in wafer synthesis probe is drawn, by normal inspection, two is launch wafer according to wafer do transmitting in wafer synthesis probe, and another two wafers are receive one of wafer to launch the double crystal probe drafting that receives twin lamella, test, and preserve the parameter regulating and set.
(3) scanning is carried out to examined workpiece, the mobile sawtooth pattern specified by standard of wafer synthesis probe is carried out with the parallel or tiltedly parallel of transverse direction, make wafer synthesize the movable distance of probe and be greater than thickness of workpiece TH and the product of the shear refraction tangent of an angle value K that pops one's head in, i.e. TH × K.
(4) when find defect time, remake all around, corner, around etc. form scanning, in conjunction with Single crystal probe DAC curve by standard to defect make character judge with grading.And carry out written record and the part calibration of defect.
(5) when finding root of weld defectiveness or suspecting that defectiveness or root echo are abnormal, the Single crystal probe pattern that A surpasses detector device is changed into double crystal probe pattern, and (teaching machine also can store a double crystal probe formula more.The inner transmitting wafer as launching of wafer synthesis probe must be connected on the transmitting jack that A surpasses on detector device), now detect and become a transmitting one and receive double crystal probe pattern.
(6) again to root defectiveness or suspect that scanning is carried out at the abnormal position of defectiveness or root echo, wafer synthesis probe is movable, makes displacement be greater than the product of the tangent value K at thickness of workpiece TH and refraction angle, i.e. TH × K.
(7) carry out character to defect to judge and grading: show by flaw echo, horizontal location, end ripple change etc. comprehensively analyze, the defect of root and nearly root in weld seam can accurately be detected, roughly can judge the direction, size, character etc. of defect, then grade, the DAC parameter of curve execution that double crystal probe makes is pressed in described grading.
Preferred scheme of the present invention:
Selected wafer synthesis probe shear refraction angle is determined according to examined throat depth, but is generally in the scope of 36 ° ~ 54 °, preferably about 45 °.
A preferred version of the present invention, examined workpiece thickness is generally 40 ~ 200mm, preferably 60 ~ 180mm, more preferably 100 ~ 150mm, further preferably 110 ~ 130mm, most preferably 120mm.During examined workpiece thinner thickness, the wafer synthesis probe that weld seam selects shear refraction angle large, the wafer synthesis probe that thicker weld seam selects shear refraction angle little.
A preferred version of the present invention, the shape that the welding line structure of examined workpiece is divided into weld reinforcement to polish and the shape that weld reinforcement does not polish.The groove type of weld seam is not particularly limited.
A preferred version of the present invention, the depth of defect of examined workpiece is generally 15 ~ 30mm apart from root surface, preferably 20 ~ 27mm, more preferably 22.5mm, but the present inventor finds: and the practice examining nearly root defect degree of depth is relevant with the size of wafer: the distance of the nearly root of size great discovery of wafer is just large; The distance of the nearly root of the little discovery of size of wafer is just little.
The effect of invention
According to the present invention, carry out entirety by using wafer synthesis probe butt welded seam and manually detect: when wafer synthesis probe uses as Single crystal probe, by when normally detecting, its effect detecting defect is not less than normal single crystal probe and detects, sometimes slightly excellent; When wafer synthesis probe launches a reception double crystal probe detection as one, its effect detecting root and nearly root defect is much higher than normal single crystal probe and detects; Particularly butt welded seam root and nearly root vertical with surface be bordering on vertical area-type defect, have extraordinary Detection capability.
Accompanying drawing explanation
Fig. 1 a is conventional single crystal probe;
Fig. 1 b is the sonde configuration schematic diagram of wafer synthesis probe;
Fig. 2 is the connection of ultrasonic detection device of the present invention and detects schematic diagram;
Fig. 3 is the process flow diagram that use wafer of the present invention synthesis probe detects;
Fig. 4 is a detection example schematic diagram of the present invention's preferred version;
Fig. 5 a is the Cleaning Principle figure that single crystal probe detects application;
Fig. 5 b is the Cleaning Principle figure that single crystal probe detects application;
Fig. 5 c is the Cleaning Principle figure that wafer of the present invention synthesis probe detects application;
Fig. 5 d is the Cleaning Principle figure that wafer of the present invention synthesis probe detects application;
To be the present invention detect schematic diagram to without the root of reinforcement weld seam and nearly root to Fig. 6 a;
To be the present invention detect schematic diagram to without the root of reinforcement weld seam and nearly root to Fig. 6 b;
To be the present invention detect schematic diagram to without the root of reinforcement weld seam and nearly root to Fig. 6 c;
Fig. 7 is that the present invention detects schematic diagram to having the root of reinforcement weld seam and nearly root;
Fig. 8 is DAC curve synoptic diagram.
Embodiment
Below in conjunction with accompanying drawing, by embodiment, the present invention is described in detail.Feature of the present invention will become more clear, clear and definite along with these descriptions.
Fig. 1 a is conventional single probe A;
Fig. 1 b is wafer synthesis probe B structural representation.As shown in Figure 1a, single probe only has a wafer 1; As shown in Figure 1 b, wafer synthesis probe is that three wafers attach together in a shell, the transmitting wafer 11 wherein launching ultrasound wave is positioned at the centre of wafer, it is curved surface self-focusing wafer, focusing distance is relevant to the thickness of examined workpiece, detected pieces thickness is larger, and the depth of focus of needs is larger.Front reception wafer 12 and rear reception wafer 13 are connected in parallel and merge into reception wafer in addition.Putting of three wafers is that angle is consistent substantially, launches wafer 11 and also two can receive the small inclination that wafer 12,13 has about 2 degree with other, is beneficial to receive acoustic beam vertical; Wafer slightly difference on height, it is as far as possible consistent that object is that the sound wave that three wafers are launched enters the workpiece time, is conducive to improving the resolution at depth direction after instrument and probe combination, namely enhances defect and structural return separating capacity;
Fig. 2 is connection, the detection schematic diagram of ultrasonic detection device of the present invention.Ultra-sonic defect detector and cable are all surpass the namely conventional A type pulse reflection ultra-sonic defect detector of detector device 14(with normal A) used when detecting be identical.Probe is wafer of the present invention synthesis probe.Launch wafer 11 to be connected with the transmitting socket that A surpasses detector device, receive wafer 12,13 and be connected with the receiver socket that A surpasses detector device 14.When wafer synthesis probe B uses as a wafer probe (this is a kind of brand-new form), the probe that A surpasses detector device selects button to be single probe pattern, probe transmitting and receiving socket now on instrument is parallel form, three wafer synthesis probes can be considered a wafer probe, i.e. three wafer probe transmittings simultaneously and/or simultaneously Received signal strength.When the probe select button that A surpasses detector device changes dual probe pattern into, wafer becomes the transmitting of a wafer probe, two wafers probe receiving modes at once.Thus, by the double mode conversion of such list, existing two kinds of testing results of Single crystal probe and double crystal probe, have had again echoed signal clearly, have greatly improved the recall rate of root and nearly root defect.
Fig. 3 is the process flow diagram that wafer of the present invention synthesis probe detects.Can find out from figure, just when making DAC curve, many draftings are once for testing process of the present invention, in addition, when finding root of weld defectiveness or suspect defectiveness or root echo exception, again the list of instrument probe pattern is changed into dual probe pattern, other step is roughly identical with during conventional sense.
It is as follows that the detection method of the application comprises step:
(1) selection standard JB/T4730.3-2005, A surpasses detector device (model: CTS-9003, Shantou Ultrasonic Electronic Co., Ltd., Guangdong produces), probe selects 2.5MHz/45 degree/wafer size [20 × (4+8+10)], and (wafer size is here not particularly limited, may also be other wafer size), test block selects CSK-IA and CSK-III A.
(2) A surpasses detector device input parameter: use the transverse wave velocity of CSK-IA calibration materials, probe refraction angle, Front distance distance, zero migration and other parameter.With the drawn DAC curve of CSK-III A test block.At least draw twice DAC curve: when wafer synthesis probe B uses as the Single crystal probe that single transmit list receives once; As one launch one receive double crystal probe time once.Sensitivity is that the hole φ 1 × 6-6dB(dB of degree of depth 120mm is called decibel, is sound intensity level unit).
(3) carry out scanning to workpiece, mobile form of popping one's head in is that the sawtooth pattern specified by standard is carried out with the parallel or tiltedly parallel of transverse direction, makes probe mobile width distance be greater than the product (TH × K) of thickness of workpiece TH and probe shear refraction tangent of an angle value K.
(4) when find defect time, remake all around, corner, around etc. form scanning, in conjunction with Single crystal probe DAC curve by standard to defect make character judge with grading.And carry out written record and the part calibration of defect.
(5) when finding root of weld defectiveness or suspecting that defectiveness or root echo are abnormal, the list probe patten transformation that A surpasses detector device is become dual probe pattern now to detect to become a transmitting one receive double crystal probe pattern.It should be noted that at this, the teaching machine of dual probe pattern also can store a dual probe formula more.Launch wafer must be connected on the transmitting jack on instrument.
(6) again to root defectiveness or suspect that scanning is carried out at the abnormal position of defectiveness or root echo, probe is movable, makes displacement be greater than the product of thickness of workpiece TH and probe shear refraction tangent of an angle value K, i.e. TH × K.
(7) carry out character to defect to judge and grading: show by flaw echo, horizontal location, end ripple change etc. comprehensively analyze, the defect of the root of weld and nearly root can accurately be detected, then grade, the DAC parameter of curve execution that double crystal probe makes is pressed in described grading.
In addition, it should be noted that, by said determination, if when the evaluation result of twice defect is inconsistent, result performs grading by a serious side.
Fig. 4 is a detection example schematic diagram of the present invention's preferred version.Shown in figure 1., 2. two positions, be detect position to the single, double probe method that 5mm × 18mm area-type defect is carried out respectively, detection method is carried out according to the content of above-mentioned steps, and testing process repeats no more.The material of following butt welded seam and result etc. are described, specific as follows: material 508 III steel of simulation weld seam, and specification 400 × 40 × 120(120 is thickness, and unit is millimeter).Simulated defect makes, and is to use the Linear cut of wire diameter 0.18mm to form.Groove is machined into along line of cut, argon arc welding solder up again, then machining is carried out, final formation degree of depth 95mm (another root surface 20mm), area is the defect of 5mm × 18mm, in order to imitate the bevel for welding of narrow gap welding, defect and upper and lower surface is made to have the inclination of 2.5 degree.
Inspection operative norm: JB/T4730.3-2005
Test block: CSK-IA and CSK-III A
Ultra-sonic defect detector: CTS-9003
Wafer synthesis probe: 2.5MHz/45 degree/wafer size 20 × (4+8+10) and 2.5MHz/45 degree/single-chip size 18 × 18
DAC curve plotting in this embodiment divide three making and single crystal probe once, wafer probe twice.Check that sensitivity is the hole φ 1 × 6-6dB of degree of depth 120mm.
Detect respectively simulation weldment on 1., 2. two positions carry out.Shown in Fig. 4.Testing result is as following table 1
Table 1
As shown in table 1, from the testing result of three groups of probes, when normal 45 degree of single probes detect, if can not give Flaw discrimination, it is qualified for being all assessed as I level; And the detection of wafer synthesis double probe method not only can be easy to judge defect property, be also only be assessed as III grade with regard to echo amplitude; And 2. 1. the echo amplitude of position is respectively φ 1 × 6+10dB and φ 1 × 6+11dB as shown in Table 1,2 known by tabling look-up, and 2. 1. the tandem echo amplitude of position is all being sentenced on scrap wire (φ 1 × 6+10dB), namely the III district shown in DAC schematic diagram, 3 known by tabling look-up, this defect should be assessed as III level, has exceeded the qualified acceptance requirement of I level, has been defective defect.Be not difficult to find out by Comparative result, use wafer synthesis probe to detect, butt welded seam root and nearly root defect detect and are very important.
The sensitivity of table 2 distance gain size curve
Table 3 quality of weld joint hierarchical table
The DAC curve that this test is drawn forms at the Plotting data of the upper actual measurement of test block (CSK-IIIA test block) by probe used and instrument, and this family of curves forms by evaluating line, quantitatively line and sentencing scrap wire.Between evaluation line and quantitatively line, (comprise and evaluate line) is I district, quantitative line and sentence that (to comprise quantitative line) between scrap wire be II district, sentences scrap wire and above region is III district, as shown in DAC curve synoptic diagram in Fig. 8.
Wherein, Sensitirity va1ue (evaluate line, quantitatively line and sentence scrap wire) corresponding during the workpiece that table 2 is detection different-thickness scope, in Fig. 8, DAC curve synoptic diagram (evaluate line, quantitatively line and sentence scrap wire) is on CSK-IIIA test block actual measurement basis, then according to drawing schematic diagram by table 2.
Fig. 5 a to Fig. 5 d is the Cleaning Principle figure that wafer of the present invention synthesis probe B detects application.
The principle of work of wafer synthesis probe detection method of the present invention is as follows:
1) incident wave of single crystal probe is propagated within the workpiece with certain angle and diffusion, will produce diffraction and reflection when running into heterogeneous interface (i.e. weld defect).Diffracted wave returns probe with shortest path, and reflection wave equals incident angle reflection with reflection angle, if the direction of defect is perpendicular with incident acoustic wave direction or near vertical time, reflection wave is popped one's head in reception, thus discovery defect, as shown in Figure 5 a.
2) when incident wave direction and (the area-type defect as vertical with detecting surface) during the out of plumb of defect direction of single crystal probe, diffracted wave is popped one's head in reception, reflection wave is to bottom reflection, detection faces is returned again by bottom reflection, can not by probe receive or received energy more weak, form undetected or misjudgement, as shown in Figure 5 b.
3) wafer synthesis probe is used to detect the volume flaw of root and nearly root, probe is that a transmitting two receives form, incident wave is through volume flaw surface reflection, probe is returned by two paths, one tunnel is received wafer probe with diffracted wave and reflection wave form and receives, one tunnel reflexes to bottom surface with reflection wave form and returns again reception wafer probe from bottom surface, thus detects defect, shown in Fig. 5 c.
4) wafer synthesis is used to pop one's head in, when root is tested with incident wave direction off plumb area-type defect (the area-type defect as vertical with detecting surface) with nearly root, the diffracted wave directly received wafer probe reception of defect; Flaw echo reflexes to bottom surface and receives wafer probe from bottom reflection tieback again, and defect is detected.Because launch wafer probe 2 and receive the spacing of wafer probe 3 almost nil, so be no matter that the area-type defect of root opening and the nearly root not vertical surface of opening can effectively be detected (holding corner reflection on a large scale).This echo path is completely identical with tandem echo path, shown in Fig. 5 d.
Based on above-mentioned principle of work, the preferred embodiment of the present invention is specifically described.
Embodiment 1
To be the present invention detect schematic diagram to without the root of reinforcement weld seam and nearly root to Fig. 6 a to Fig. 6 c.This detection method utilizes the detecting step of the application to carry out detecting, and in concrete steps slightly, is described below to without the root of reinforcement weld seam and the result of nearly root detection and determination methods.
Weld reinforcement is by more in the situation reality that polishes, and the C level weld seam detection in JB/T4730-2005 standard, the weld seam detection of nuclear power one-level parts, the weld seam detection of some security staple product, all polish weld reinforcement.The cardinal rule of defect is judged: in the position of thickness of workpiece T and the position being less than T, display screen occurs that echo is all Flaw display in this kind of inspection, namely the depth location of root and nearly root has echoed signal to be exactly defect, but the surface noise very little to echo amplitude involves special geometry echo not very interior.Concrete detailed decision criteria is as follows:
Flaw echo situation has following four kinds substantially, but it should be noted that, so that understand in this instructions, the pulse echo that display depth position on display screen is less than thickness of workpiece T is called F1; Display depth position is that thickness of workpiece T or the pulse echo being slightly less than T are called F2; Initial pulse ripple is called that T begins.
1) as Fig. 6 b-1. shown in, when there is no defect in weld seam, display screen only has T to begin+faint bottom surface noise echo.
2) as Fig. 6 b-2. shown in, display screen having T to begin the faint Bottom echo of+F1+, is nearly root defectiveness in weld seam.
3) as 6b-3. shown in, when display screen having T beginning+F1+F2, defect situation may two kinds: one be F1 be nearly root defect, F2 be sound wave through defect reflection to bottom surface, again by the echo of bottom reflection; Two is F1 is nearly root defects, and F2 is root defect.Method of discrimination is horizontal location, and weld seam both sides (180 degree) horizontal location F2 when same point is root defect, otherwise is not defect.
4) as 6b-4. shown in, when display screen having T beginning+F2, F2 is defect, but defect situation may two kinds: one be F2 be root defect; Two is area-type defects that nearly root has vertical surface, be sound wave through defect reflection to bottom surface, again by the echo of bottom reflection.This method of discrimination one is horizontal location, and weld seam both sides (180 degree) horizontal location F2 when same point is root defect, otherwise is exactly nearly root defect.Two is the gains improving instrument, makes F1 have faint appearance.In this case, echo must be amplitude peak position.
Embodiment 2
Fig. 7 is that the present invention detects schematic diagram to having the root of reinforcement weld seam and nearly root.This detection method utilizes the detecting step of the application to carry out detecting, and concrete steps are omitted, and is described below to the result having the root of reinforcement weld seam and nearly root to detect and determination methods.Several display echo situation, horizontal location mode in weld seam in figure.It is roughly the same that several defect pattern and Fig. 6 a-6c of the root of weld and nearly root provide.
When weld reinforcement does not polish, there is the interference of geometry echoed signal in echo, to judging that defect brings puzzlement.And in the design of wafer synthesis probe B, want to eliminate geometry echo, but the geometric configuration of weld seam is different, it is unpractical for eliminating geometry signals, but the resolution characteristic of echo truly has suitable raising.Therefore, have employed the detection mode having reinforcement weld seam of present embodiment.And in inspection, judging the cardinal rule of defect: the pulse echo that display screen occurs in the position of thickness of workpiece T and the position being less than T is all defect! Special workpiece geometries echo and range of geometrical variations ripple are not very interior.
Concrete detailed decision criteria is as follows:
Flaw echo situation is substantially with regard to four kinds:
1) defect is not had in weld seam, display screen has initial pulse ripple and end curved surface to there is geometry reflection echo, the display depth position of this geometry signals is called F3 slightly larger than thickness of workpiece T(), geometry signals horizontal location judges: find echo maximum point, measure horizontal range position, position exceedes Weld pipe mill, and locating at the opposite side (180 degree) of weld seam was also Weld pipe mill, namely twice location is all at the opposite side of weld seam, just can judge it is geometry echo.As shown in Fig. 7-1., it should be noted that, the present inventor finds that shear wave vertically or closely impinges perpendicularly on the curved surface place of root of weld reinforcement, it is shear wave when can go, it is the shape transformation of compressional wave when returning, transformed wave display depth position about 0.8T, the position of horizontal location is near the weld edge of probe side, and its echo amplitude is lower.Its several judgement features are: the probe positions of geometry echo maximum point, are also the probe positions of modification wave amplitude peak; Echo scope of moving about is very little, and that namely pops one's head in is movable apart from little; If modification ripple appears in certain weld seam, so whole piece weld seam has this modification ripple signal substantially.As shown in Fig. 7-1..In order to be conducive to finding root and nearly root defect, the prerequisite of horizontal location must be that instrument is linearly accurate; And F3 when occurring probe and the relative position of weld seam and the amplitude size of F3 very important.
2), when display screen having T beginning+F1+F3, F1 is nearly root defect in weld seam, and weld seam both sides horizontal location is in same point.As shown in Fig. 7-2..
3) display screen has T begin+F1+F2+F3 (F3 likely obscures with F2, and now F2 amplitude is higher) time, defect situation may two kinds: one be F1 be nearly root defect, F2 be sound wave through defect reflection to bottom surface, again by the echo of bottom reflection; Two is F1 is nearly root defects, and F2 is root defect.Method of discrimination is horizontal location, and weld seam both sides (180 degree) horizontal location F2 when same point is root defect, otherwise is not defect.As 7-3. shown in.
4), when display screen having T beginning+F2+F3 (F3 does not likely have, and now F2 amplitude is higher), F2 is defect.Defect situation possibility two kinds: one is F2 is root defect; Two is area-type defects that nearly root has vertical surface, be sound wave through defect reflection to bottom surface, again by the sound echo of bottom reflection.Method of discrimination one is horizontal location, and weld seam both sides (180 degree) horizontal location F2 when same point is root defect, otherwise is exactly nearly root defect; Two is the gains improving instrument, makes F1 ripple have faint appearance.As 7-4. shown in.
Above by preferred embodiment to invention has been exemplary explanation.But it is to be understood that; these embodiments are only to illustrative explanations of the present invention; any restriction is not formed to protection scope of the present invention; when not exceeding the present invention's spirit and protection domain; those skilled in the art can carry out various improvement, equivalencing or modification to the technology of the present invention content and embodiment thereof, and these all fall within the scope of protection of the present invention.
Claims (9)
1. the method for a ultrasonic testing root of weld defect, it is characterized in that, the method uses the device of ultrasonic testing root of weld defect to complete, wherein, the device of ultrasonic testing root of weld defect comprises the wafer synthesis probe and ultra-sonic defect detector that are connected by cable, and described wafer synthesis probe is the probe of three wafer package an enclosure; The method comprises the following steps:
(1) select the test block of ultrasonic testing root of weld defect, wherein, described test block is the combination of the combination of CSK-IA and CSK-II or the combination of CSK-IA and CSK-III or CSK-IA and CSK-IVA;
(2) utilize CSK-IA test block, regulate ultra-sonic defect detector linear, every UT (Ultrasonic Testing) instrument parameter is set; And utilize CSK-II, CSK-III or CSK-IVA test block, determine flaw detection sensitivity, at least draw twice DAC curve, preserve the parameter regulating and set simultaneously;
Described DAC curve negotiating Single crystal probe and double crystal probe are drawn, described Single crystal probe is using the probe of three wafers of encapsulation in wafer synthesis probe as a wafer entirety, and in wafer synthesis probe, three wafers of encapsulation are connected in parallel, and check according to a conventional method;
Described double crystal probe is that in described wafer synthesis being popped one's head in, three wafer set synthesis one transmittings one of encapsulation receive double crystal probe, and namely in three wafers, wafer is launched in a conduct, and another two wafers are as reception wafer;
(3) carry out scanning to examined workpiece, probe is mobile to carry out with the parallel or tiltedly parallel of transverse direction by sawtooth pattern, makes probe move forward and backward distance and is greater than thickness of workpiece TH and the product of the shear refraction tangent of an angle value K that pops one's head in, i.e. TH × K;
(4) when finding defect, remaking all around, corner, around form scanning, the DAC curve in conjunction with Single crystal probe is made character by standard to defect and judged and grading, and carries out written record and the part calibration of defect;
(5) when finding root of weld defectiveness or suspecting that defectiveness or root echo are abnormal, the Single crystal probe pattern of ultra-sonic defect detector is changed into double crystal probe pattern, namely detect and become a transmitting one and receive double crystal probe pattern;
(6) again to root defectiveness or suspect that scanning is carried out at the abnormal position of defectiveness or root echo, probe is movable, makes displacement be greater than the product of the tangent value K at thickness of workpiece TH and refraction angle, i.e. TH × K;
(7) carry out character to defect to judge and grading: show by flaw echo, horizontal location, end ripple change and comprehensively analyze, the defect of root and nearly root in weld seam can accurately be detected, roughly can judge the direction of defect, size, character, then grade, the DAC parameter of curve execution that double crystal probe makes is pressed in described grading.
2. the method for ultrasonic testing root of weld defect according to claim 1, is characterized in that, selected wafer synthesis probe shear refraction angle is 36 ° ~ 54 °.
3. the method for ultrasonic testing root of weld defect according to claim 2, is characterized in that, selected wafer synthesis probe shear refraction angle is 45 °.
4. the method for ultrasonic testing root of weld defect according to claim 1, is characterized in that, examined workpiece thickness is 40 ~ 200mm.
5. the method for ultrasonic testing root of weld defect according to claim 1, is characterized in that, the depth of defect of examined workpiece is 15 ~ 30mm.
6. the method for ultrasonic testing root of weld defect according to claim 5, is characterized in that, the depth of defect of examined workpiece is 22.5mm.
7. the method for ultrasonic testing root of weld defect according to claim 1, is characterized in that, the structure of the weld seam of examined workpiece is the shape that the shape that polishes of weld reinforcement and weld reinforcement do not polish.
8. the method for ultrasonic testing root of weld defect according to claim 1, is characterized in that, ultra-sonic defect detector is that A surpasses detector device.
9. the method for ultrasonic testing root of weld defect according to claim 8, is characterized in that, it is teaching machine or analog machine that A surpasses detector device.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103728375B (en) * | 2014-01-13 | 2016-04-06 | 国家电网公司 | GIS end flange and cylindrical shell fillet weld apparatus for evaluating and nondestructive evaluation method thereof |
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| CN108459086B (en) * | 2018-05-21 | 2023-10-24 | 哈电集团（秦皇岛）重型装备有限公司 | Manual ultrasonic inspection method for large thick-wall dissimilar metal weld joint |
| CN108732246B (en) * | 2018-05-23 | 2020-12-18 | 江苏大学 | Design of receiving and transmitting integrated array sensor for detecting weld joint through ultrasonic guided wave |
| CN110824005A (en) * | 2019-11-07 | 2020-02-21 | 中车长春轨道客车股份有限公司 | Ultrasonic detection process for welding seam backing welding of bogie frame |
| CN114199998B (en) * | 2020-09-18 | 2024-03-08 | 宝山钢铁股份有限公司 | Manual detection method and device for welding pipe groove unfused and slag inclusion defects |
| CN113030272B (en) * | 2021-02-08 | 2024-04-09 | 中国核电工程有限公司 | Advanced ultrasonic detection method and system for nuclear component welding joint |
| CN114062508A (en) * | 2021-11-16 | 2022-02-18 | 中车唐山机车车辆有限公司 | Welding seam detection method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3662482B2 (en) * | 2000-07-31 | 2005-06-22 | 財団法人鉄道総合技術研究所 | Calibration specimen for ultrasonic inspection of rail welds |
| CN101441198A (en) * | 2008-11-28 | 2009-05-27 | 中国航天空气动力技术研究院 | Ultrasonic wave detection method of wind tunnel body structure butt-jointed seam |
| CN101464428A (en) * | 2007-12-18 | 2009-06-24 | 中国海洋石油总公司 | Supersonic inspection method for profiled bar overwelded hole welding joint |
| CN102706959A (en) * | 2012-05-21 | 2012-10-03 | 太原钢铁(集团)有限公司 | Ultrasonic flaw detection method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060236771A1 (en) * | 2005-04-26 | 2006-10-26 | Dong-Chang Lin | Vibration and rotation detector |
-
2013
- 2013-09-27 CN CN201310452335.2A patent/CN103472133B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3662482B2 (en) * | 2000-07-31 | 2005-06-22 | 財団法人鉄道総合技術研究所 | Calibration specimen for ultrasonic inspection of rail welds |
| CN101464428A (en) * | 2007-12-18 | 2009-06-24 | 中国海洋石油总公司 | Supersonic inspection method for profiled bar overwelded hole welding joint |
| CN101441198A (en) * | 2008-11-28 | 2009-05-27 | 中国航天空气动力技术研究院 | Ultrasonic wave detection method of wind tunnel body structure butt-jointed seam |
| CN102706959A (en) * | 2012-05-21 | 2012-10-03 | 太原钢铁(集团)有限公司 | Ultrasonic flaw detection method |
Non-Patent Citations (3)
| Title |
|---|
| ASME焊缝超声检测标准及与中国标准的比较;李衍;《无损探伤》;20091031;第33卷(第5期);第25-29页 * |
| Mingsen Guo et al.A Double-Mode Piezoelectric Single-Crystal Ultrasonic Micro-Actuator.《IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control》.2010,第57卷(第11期), * |
| 超声相控阵自动检测系统在直缝埋弧焊管上的应用;甘正红等;《焊管》;20100430;第33卷(第4期);第29-33页 * |
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