CN203519564U - Device for detecting weld root defects through ultrasonic waves - Google Patents
Device for detecting weld root defects through ultrasonic waves Download PDFInfo
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- CN203519564U CN203519564U CN201320605003.9U CN201320605003U CN203519564U CN 203519564 U CN203519564 U CN 203519564U CN 201320605003 U CN201320605003 U CN 201320605003U CN 203519564 U CN203519564 U CN 203519564U
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Abstract
The utility model discloses a device for detecting weld root defects through ultrasonic waves. The device comprises a three-wafer synthesis probe and an ultrasonic flaw detector which are connected through a cable wire; the three-wafer synthesis probe is a probe for packaging three wafers into the interior of a shell, wherein the three-wafer synthesis probe comprises the shell, the interior of the three-wafer synthesis probe is provided with an organic glass bracket, and a front receiving wafer, an emitting wafer and a back receiving wafer are arranged at the top of the organic glass bracket from front to back; the emitting wafer is connected with an emitting plughole of the ultrasonic flaw detector through a cable wire, and the front receiving wafer and the back receiving wafer are connected with a receiving plughole of the ultrasonic flaw detector through cable wires; the ultrasonic flaw detector is provided with a probe selection button, and the probe selection button is used for switching the three-wafer synthesis probe between a single-probe mode and a double-probe mode.
Description
Technical field
The utility model relates to a kind of device of ultrasonic testing root of weld defect, especially relates to a kind of device that comprises the synthetic ultrasonic testing root of weld defect of popping one's head in of three wafers of special development.
Background technology
At present both at home and abroad the method and apparatus of harmless volumetric proving has a lot, and that commonly uses mainly contains two large classes: ray and ultrasound wave.And in the method for ultrasound wave butt welded seam Inner Defect Testing, be divided into reflectometry, tandem method, time difference diffraction approach, LLT/TLT method, phase array method etc.
Owing to affected by detected weld reinforcement, misalignment, workpiece shape etc.Existing pick-up unit, butt welded seam root defect and the Detection capability of nearly root with the vertical Area defect in surface, have limitation and shortcoming separately.Concrete reason is: conventional equipment is disturbed by the structural returns such as detected weld reinforcement, misalignment all strongly, so that root defect ripple and structure ripple differentiation difficulty.To nearly root and surface the detecting of vertical Area defect: reflectometry and phase array method can only receive diffraction echo, without reception reflection echo, echo amplitude a little less than.Comprehensive above-mentioned known, an equal Shortcomings of area-type defect detection effect of conventional sense device butt welded seam root and nearly root vertical surface!
Due to the existence of the problems referred to above, the inventor studies and improves prior art, to can produce the device of the ultrasonic testing root of weld defect of the area-type defect detection effect that can improve butt welded seam root and nearly root vertical surface.
Utility model content
In order to address the above problem, the inventor has carried out research with keen determination, found that: by cable, the synthetic probe of three wafers and ultra-sonic defect detector are connected to form to this device, wherein, the synthetic probe of three wafers comprises shell, be arranged at the organic glass support of enclosure, be arranged at organic glass and prop up top of the trellis reception wafer, transmitting wafer and rear reception wafer; Transmitting wafer is connected with the transmitting jack of ultra-sonic defect detector by cable, described front reception wafer is connected with the reception jack of ultra-sonic defect detector by cable with rear reception wafer; Thereby complete the utility model.
The purpose of this utility model is to provide following aspect:
(1) a kind of device of ultrasonic testing root of weld defect, it is characterized in that, this device comprises the synthetic probe of three wafers that are connected by cable and ultra-sonic defect detector, and the synthetic probe of described three wafers is the probe an enclosure three wafer package;
Wherein, the synthetic probe of three wafers comprises that shell 15, its inside arrange organic glass supporter 16, props up top of the trellis before arrangement, receive wafer 12, transmitting wafer 11 and rear reception wafer 13 successively to the right by front at organic glass; Described transmitting wafer 11 is connected with the transmitting jack of ultra-sonic defect detector by cable, and described front reception wafer 12 is connected with the reception jack of ultra-sonic defect detector by cable with after rear reception wafer 13 parallel connections;
Wherein, on ultra-sonic defect detector, containing probe and selecting button, by probe, selecting button that three wafers are synthesized to pop one's head in and change between the two in single probe pattern and two probe pattern;
Wherein, it is parallel form that the probe when probe of ultra-sonic defect detector selects button to be single probe pattern on instrument transmits and receives jack, and three synthetic probes of wafers can be considered a wafer probe, i.e. three wafer probe transmittings simultaneously and/or simultaneously receive signal.When the probe of ultra-sonic defect detector selects button to change two probe pattern into, three wafers become the transmitting of a wafer probe, two wafer probe receiving modes.
(2) according to the device of the ultrasonic testing root of weld defect above-mentioned (1) Suo Shu, it is characterized in that, the selected synthetic probe of three wafers shear refraction angle is 36 °～54 °.
(3) according to the device of the ultrasonic testing root of weld defect above-mentioned (2) Suo Shu, it is characterized in that, the selected synthetic probe of three wafers shear refraction angle is 45 °.
(4) according to the device of the ultrasonic testing root of weld defect above-mentioned (1) Suo Shu, it is characterized in that, ultra-sonic defect detector is the super detector device of A.
(5) according to the device of the ultrasonic testing root of weld defect above-mentioned (1) Suo Shu, it is characterized in that, the super detector device of A is teaching machine or analog machine.
The device of the ultrasonic testing root of weld defect providing according to the utility model, by using the synthetic probe of three wafers butt welded seam to carry out integral body, manually detect: when the synthetic probe of three wafers is used as Single crystal probe, during by normal detection, its effect that detects defect is not less than normal single crystal probe and detects, sometimes slightly excellent; When the synthetic probe of three wafers receives double crystal probe detection as a transmitting one, its effect that detects root and nearly root defect is much higher than normal single crystal probe and detects; Particularly butt welded seam root and nearly root with surperficial vertical be bordering on vertical area-type defect, have extraordinary Detection capability.
Accompanying drawing explanation
Fig. 1 a is conventional single crystal probe structural representation;
Fig. 1 b is conventional single crystal probe structural representation;
Fig. 2 a is the sonde configuration schematic diagram of the synthetic probe of three wafers;
Fig. 2 b is the sonde configuration schematic diagram of the synthetic probe of three wafers;
Fig. 3 is the connection of ultrasonic detection device of the present utility model and detects schematic diagram;
Fig. 4 a is the detection schematic diagram that single crystal probe detects application;
Fig. 4 b is the detection schematic diagram that single crystal probe detects application;
Fig. 4 c is the detection schematic diagram that the synthetic probe of three wafers of the present utility model detects application;
Fig. 4 d is the detection schematic diagram that the synthetic probe of three wafers of the present utility model detects application;
Drawing reference numeral explanation
1-wafer
11-launches wafer
Before 12-, receive wafer
After 13-, receive wafer
The super defectoscope of 14-A
15-shell
16-organic glass support
Embodiment
Below in conjunction with accompanying drawing, by embodiment, the utility model is elaborated.Feature of the present utility model will become more clear, clear and definite along with these descriptions.
Fig. 1 a and Fig. 1 b are conventional single crystal probe A;
Fig. 2 a and Fig. 2 b are the synthetic probe B structural representations of three wafers.As shown in Fig. 1 a and 1b, single probe only has a wafer 1; As shown in Fig. 2 a and 2b, the synthetic probe of three wafers is that three wafers attach together in a shell, wherein launch transmitting wafer 11 that ultrasound wave uses and be positioned at the centre of three wafers, it is curved surface self-focusing wafer, focusing distance is relevant to the thickness of tested workpiece, detected pieces thickness is larger, and the depth of focus needing is larger.Front reception wafer 12 and rear reception wafer 13 are connected in parallel and merge into reception wafer in addition.Putting of three wafers is that angle is consistent substantially, and transmitting wafer 11 also can two receive the small inclination that wafer 12,13 have 20 left and right with other, is beneficial to receive acoustic beam vertical; On height, three wafers are slightly variant, and object is that to make the sound wave of three wafers transmitting enter the workpiece time as far as possible consistent, are conducive to improve after instrument and probe combination in the resolution of depth direction, strengthened defect and structural return separating capacity;
Fig. 3 is connection, the detection schematic diagram of ultrasonic detection device of the present utility model.Ultra-sonic defect detector and cable are to be all conventional A type pulse reflection ultra-sonic defect detector with the super detector device 14(of normal A) used while detecting be identical.Probe is the synthetic probes of the utility model three wafers.Transmitting wafer 11 is connected with the transmitting socket of the super detector device of A, receives wafer 12,13 and is connected with the receiver socket of the super detector device 14 of A.When the synthetic probe B of three wafers is used as a wafer probe (this is a kind of brand-new form), it is single probe pattern that the probe of the super detector device of A is selected button, now to transmit and receive socket be parallel form to the probe on instrument, the synthetic probe of three wafers can be considered a wafer probe, i.e. three wafer probe transmittings simultaneously and/or simultaneously receive signal.When the probe of the super detector device of A selects button to change two probe pattern into, three wafers become the transmitting of a wafer probe, two wafer probe receiving modes at once.Thus, by the double mode conversion of such list, two kinds of testing results of existing Single crystal probe and double crystal probe, have had again echoed signal clearly, and the recall rate of root and nearly root defect is improved greatly.
Fig. 4 a to Fig. 4 b is the detection schematic diagram of conventional single crystal probe A;
Fig. 4 c to Fig. 4 d is the detection schematic diagram of the synthetic probe B of three wafers of the present utility model.
The synthetic probe of three wafers that the utility model provides detects principle and the contrast of conventional single crystal probe detection principle is as follows:
1) incident wave of single crystal probe is propagated with being diffused in workpiece with certain angle, while running into heterogeneous interface (being weld defect), will produce diffraction and reflection.Diffracted wave returns to probe with shortest path, and reflection wave equals incident angle reflection with reflection angle, if the direction of defect is perpendicular with incident acoustic wave direction or near when vertical, the reflection wave reception of being popped one's head in, thereby discovery defect, as shown in Fig. 4 a.
2) when the incident wave direction of single crystal probe is during with defect direction out of plumb (as the area-type defect vertical with detecting surface), the diffracted wave reception of being popped one's head in, reflection wave is to bottom reflection, by bottom reflection, return detection faces again, can not be received by probe or received energy a little less than, form undetected or misjudgement, as shown in Figure 4 b.
3) use the synthetic probe of three wafers to detect the volume type defect of root and nearly root, probe is transmitting two reception forms, incident wave reflects through volume type blemish surface, by two paths, return to probe, one tunnel receives with diffracted wave and the received wafer probe of reflection wave form, one tunnel reflexes to You Cong bottom surface, bottom surface with reflection wave form and returns to reception wafer probe, thus the defect of detecting, shown in Fig. 4 c.
4) use the synthetic probe of three wafers, when root is tested with incident wave direction off plumb area-type defect (as the area-type defect vertical with detecting surface) with nearly root, the diffracted wave of defect directly received wafer probe receives; Flaw echo reflexes to bottom surface and from bottom reflection tieback, receives wafer probe again, and defect is detected.Because transmitting wafer probe 2 and to receive the spacing of wafer probe 3 almost nil, so no matter be root opening and nearly root not the area-type defect of the vertical surface of opening can effectively be detected (holding on a large scale corner reflection).This echo path is completely identical with tandem echo path, shown in Fig. 4 d.
The device of the ultrasonic testing root of weld defect providing according to the utility model, by using the synthetic probe of three wafers butt welded seam to carry out integral body, manually detect: when the synthetic probe of three wafers is used as Single crystal probe, during by normal detection, its effect that detects defect is not less than normal single crystal probe and detects, sometimes slightly excellent; When the synthetic probe of three wafers receives double crystal probe detection as a transmitting one, its effect that detects root and nearly root defect is much higher than normal single crystal probe and detects; Particularly butt welded seam root and nearly root with surperficial vertical be bordering on vertical area-type defect, have extraordinary Detection capability.
By preferred embodiment, the utility model has been carried out to exemplary explanation above.What but need statement is; these embodiments are only to illustrative explanation of the present utility model; protection domain of the present utility model is not formed to any restriction; in the situation that not exceeding the utility model spirit and protection domain; those skilled in the art can carry out various improvement, of equal value replacement or modification to the utility model technology contents and embodiment thereof, and these all fall in protection domain of the present utility model.
Claims (5)
1. a device for ultrasonic testing root of weld defect, is characterized in that, this device comprises the synthetic probe of three wafers that are connected by cable and ultra-sonic defect detector, and the synthetic probe of described three wafers is the probe an enclosure three wafer package;
Wherein, the synthetic probe of three wafers comprises shell (15), and its inside arranges organic glass supporter (16), props up top of the trellis before arrangement, receive wafer (12), transmitting wafer (11) and rear reception wafer (13) successively to the right by front at organic glass; Described transmitting wafer (11) is connected with the transmitting jack of ultra-sonic defect detector by cable, and described front reception wafer (12) is connected with the reception jack of ultra-sonic defect detector by cable with after rear reception wafer (13) parallel connection;
Wherein, on ultra-sonic defect detector, containing probe and selecting button, by probe, selecting button that three wafers are synthesized to pop one's head in and change between the two in single probe pattern and two probe pattern;
Wherein, it is parallel form that probe when the probe of ultra-sonic defect detector selects button to be single probe pattern on instrument transmits and receives jack, three synthetic probes of wafer can be considered a wafer probe, i.e. three wafers probe transmitting simultaneously and/or simultaneously receive signal, when the probe of ultra-sonic defect detector selects button to change two probe pattern into, three wafers become the transmitting of a wafer probe, two wafer probe receiving modes.
2. the device of ultrasonic testing root of weld defect according to claim 1, is characterized in that, the selected synthetic probe of three wafers shear refraction angle is 36 °～54 °.
3. the device of ultrasonic testing root of weld defect according to claim 2, is characterized in that, the selected synthetic probe of three wafers shear refraction angle is 45 °.
4. the device of ultrasonic testing root of weld defect according to claim 1, is characterized in that, ultra-sonic defect detector is the super detector device of A.
5. the device of ultrasonic testing root of weld defect according to claim 1, is characterized in that, the super detector device of A is teaching machine or analog machine.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320605003.9U CN203519564U (en) | 2013-09-27 | 2013-09-27 | Device for detecting weld root defects through ultrasonic waves |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320605003.9U CN203519564U (en) | 2013-09-27 | 2013-09-27 | Device for detecting weld root defects through ultrasonic waves |
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| CN203519564U true CN203519564U (en) | 2014-04-02 |
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| CN201320605003.9U Expired - Lifetime CN203519564U (en) | 2013-09-27 | 2013-09-27 | Device for detecting weld root defects through ultrasonic waves |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105987951A (en) * | 2015-01-28 | 2016-10-05 | 宝山钢铁股份有限公司 | Crack detection method recognizing types of defects in edge of weld joint |
| CN113984895A (en) * | 2021-10-26 | 2022-01-28 | 凯立博自动化设备(重庆)有限责任公司 | Intelligent ultrasonic flaw detector and probe adjusting method thereof |
-
2013
- 2013-09-27 CN CN201320605003.9U patent/CN203519564U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105987951A (en) * | 2015-01-28 | 2016-10-05 | 宝山钢铁股份有限公司 | Crack detection method recognizing types of defects in edge of weld joint |
| CN105987951B (en) * | 2015-01-28 | 2018-12-07 | 宝山钢铁股份有限公司 | Identify the method for detection of weld seam edge defect type |
| CN113984895A (en) * | 2021-10-26 | 2022-01-28 | 凯立博自动化设备(重庆)有限责任公司 | Intelligent ultrasonic flaw detector and probe adjusting method thereof |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140402 |