CN103457567B - 用于超导稳频振荡器的超导谐振腔的内表面处理方法 - Google Patents
用于超导稳频振荡器的超导谐振腔的内表面处理方法 Download PDFInfo
- Publication number
- CN103457567B CN103457567B CN201310418599.6A CN201310418599A CN103457567B CN 103457567 B CN103457567 B CN 103457567B CN 201310418599 A CN201310418599 A CN 201310418599A CN 103457567 B CN103457567 B CN 103457567B
- Authority
- CN
- China
- Prior art keywords
- superconducting cavity
- temperature
- time
- annealing
- superconducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310418599.6A CN103457567B (zh) | 2013-09-13 | 2013-09-13 | 用于超导稳频振荡器的超导谐振腔的内表面处理方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310418599.6A CN103457567B (zh) | 2013-09-13 | 2013-09-13 | 用于超导稳频振荡器的超导谐振腔的内表面处理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103457567A CN103457567A (zh) | 2013-12-18 |
CN103457567B true CN103457567B (zh) | 2016-06-15 |
Family
ID=49739610
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310418599.6A Expired - Fee Related CN103457567B (zh) | 2013-09-13 | 2013-09-13 | 用于超导稳频振荡器的超导谐振腔的内表面处理方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103457567B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104935291B (zh) * | 2015-06-25 | 2017-12-26 | 北京无线电计量测试研究所 | 一种低相噪蓝宝石微波振荡器 |
CN113811064B (zh) * | 2020-06-11 | 2024-01-30 | 中国科学院近代物理研究所 | 一种Nb3Sn超导加速腔的热处理方法 |
CN111800933B (zh) * | 2020-07-08 | 2021-10-22 | 中国科学院高能物理研究所 | 一种超导腔中温退火方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5393444A (en) * | 1992-09-08 | 1995-02-28 | Ngk Insulators, Ltd. | Piezoelectric semiconductor |
CN1767718A (zh) * | 2005-11-11 | 2006-05-03 | 赵夔 | 大晶粒铌材超导腔及其制造方法 |
CN1891864A (zh) * | 2005-07-08 | 2007-01-10 | 北京大学 | 超导腔的干式处理方法 |
-
2013
- 2013-09-13 CN CN201310418599.6A patent/CN103457567B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5393444A (en) * | 1992-09-08 | 1995-02-28 | Ngk Insulators, Ltd. | Piezoelectric semiconductor |
CN1891864A (zh) * | 2005-07-08 | 2007-01-10 | 北京大学 | 超导腔的干式处理方法 |
CN1767718A (zh) * | 2005-11-11 | 2006-05-03 | 赵夔 | 大晶粒铌材超导腔及其制造方法 |
Non-Patent Citations (2)
Title |
---|
频率标准用超导铌腔内表面处理工艺研究;王暖让等;《宇航计测技术》;20111031;第30-33页 * |
高梯度射频超导腔及其功率耦合器材料的研究;温华明;《中国优秀博硕士学位论文全文数据库 工程科技Ⅱ辑》;20051015;第29-33,83-91页 * |
Also Published As
Publication number | Publication date |
---|---|
CN103457567A (zh) | 2013-12-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103457567B (zh) | 用于超导稳频振荡器的超导谐振腔的内表面处理方法 | |
CN103489760B (zh) | SiC衬底同质外延碳硅双原子层薄膜的方法 | |
Iwasaki et al. | Esr evidence for the static distortion of 2 E 1g benzene cations giving 2 B 2g with D 2h symmetry in low temperature matrices | |
US2422628A (en) | Glass to metal seal | |
US11464102B2 (en) | Methods and systems for treatment of superconducting materials to improve low field performance | |
Liu et al. | High‐Potential Metalless Nanocarbon Foam Supercapacitors Operating in Aqueous Electrolyte | |
Sha et al. | Ultrahigh accelerating gradient and quality factor of CEPC 650 MHz superconducting radio-frequency cavity | |
Fan et al. | Tailored modifications of the electronic properties of gC 3 N 4/C 2 N-h 2D nanoribbons by first-principles calculations | |
Xie et al. | An open-endcap blade trap for radial-2D ion crystals | |
CN109980495B (zh) | 可饱和吸收体制备方法、可饱和吸收体及光纤激光器 | |
CN103474332B (zh) | 提升网状生长Web Growth的刻蚀方法 | |
JP6036230B2 (ja) | アルカリ金属セルの製造方法及び原子発振器の製造方法 | |
CN103489759B (zh) | SiC衬底同质网状生长Web Growth外延方法 | |
TWI796609B (zh) | 利用超臨界流體插層及微波膨脹步驟製備石墨烯片之方法 | |
CN108448068A (zh) | 自支撑氟氮掺杂石墨烯薄膜材料及其制备方法 | |
CN103792272B (zh) | 一种金属纳米电极及其制备方法 | |
CN106024586A (zh) | 一种碳化硅表面清洁方法 | |
CN109207692A (zh) | 一种控制腔体内部氢含量的封装外壳制造方法 | |
CN105220088B (zh) | 一种提高镍锰镓纤维磁热性能的热处理方法 | |
CN108448164A (zh) | 基于自支撑氟氮掺杂石墨烯薄膜的钠电池 | |
Wang et al. | Clear Representation of Surface Pathway Reactions at Ag Nanowire Cathodes in All-Solid Li–O₂ Batteries | |
JP2010147963A (ja) | 水晶振動子の製造方法及びその装置 | |
Reece et al. | Improved performance of JLAB 7-cell cavities by electropolishing | |
Dhakal et al. | Reproducibility of high-Q SRF cavities by high temperature heat treatment | |
CN104986963B (zh) | 一种可伐合金玻封连接器前处理溶液及其使用方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CB03 | Change of inventor or designer information |
Inventor after: Wang Xiaoli Inventor after: Wang Nuanrang Inventor after: Cui Yongshun Inventor after: Yang Renfu Inventor after: Gao Lianshan Inventor after: Nian Feng Inventor before: Wang Nuanrang Inventor before: Cui Yongshun Inventor before: Yang Renfu Inventor before: Gao Lianshan Inventor before: Nian Feng |
|
CB03 | Change of inventor or designer information | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170905 Address after: 300450 Dagang District, Bei'an, Tianjin Binhai New Area, 11-3-401 Patentee after: Wang Xiaoli Address before: 100854 Haidian District, Beijing, box 142, box office, 408 Patentee before: Beijing Radio Measuring and Testing Institute |
|
TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160615 Termination date: 20180913 |
|
CF01 | Termination of patent right due to non-payment of annual fee |