CN103457567A - 用于超导稳频振荡器的超导谐振腔的内表面处理方法 - Google Patents
用于超导稳频振荡器的超导谐振腔的内表面处理方法 Download PDFInfo
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104935291A (zh) * | 2015-06-25 | 2015-09-23 | 北京无线电计量测试研究所 | 一种低相噪蓝宝石微波振荡器 |
CN111800933A (zh) * | 2020-07-08 | 2020-10-20 | 中国科学院高能物理研究所 | 一种超导腔中温退火方法 |
CN113811064A (zh) * | 2020-06-11 | 2021-12-17 | 中国科学院近代物理研究所 | 一种Nb3Sn超导加速腔的热处理方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5393444A (en) * | 1992-09-08 | 1995-02-28 | Ngk Insulators, Ltd. | Piezoelectric semiconductor |
CN1767718A (zh) * | 2005-11-11 | 2006-05-03 | 赵夔 | 大晶粒铌材超导腔及其制造方法 |
CN1891864A (zh) * | 2005-07-08 | 2007-01-10 | 北京大学 | 超导腔的干式处理方法 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5393444A (en) * | 1992-09-08 | 1995-02-28 | Ngk Insulators, Ltd. | Piezoelectric semiconductor |
CN1891864A (zh) * | 2005-07-08 | 2007-01-10 | 北京大学 | 超导腔的干式处理方法 |
CN1767718A (zh) * | 2005-11-11 | 2006-05-03 | 赵夔 | 大晶粒铌材超导腔及其制造方法 |
Non-Patent Citations (2)
Title |
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温华明: "高梯度射频超导腔及其功率耦合器材料的研究", 《中国优秀博硕士学位论文全文数据库 工程科技Ⅱ辑》, 15 October 2005 (2005-10-15) * |
王暖让等: "频率标准用超导铌腔内表面处理工艺研究", 《宇航计测技术》, 31 October 2011 (2011-10-31) * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104935291A (zh) * | 2015-06-25 | 2015-09-23 | 北京无线电计量测试研究所 | 一种低相噪蓝宝石微波振荡器 |
CN104935291B (zh) * | 2015-06-25 | 2017-12-26 | 北京无线电计量测试研究所 | 一种低相噪蓝宝石微波振荡器 |
CN113811064A (zh) * | 2020-06-11 | 2021-12-17 | 中国科学院近代物理研究所 | 一种Nb3Sn超导加速腔的热处理方法 |
CN113811064B (zh) * | 2020-06-11 | 2024-01-30 | 中国科学院近代物理研究所 | 一种Nb3Sn超导加速腔的热处理方法 |
CN111800933A (zh) * | 2020-07-08 | 2020-10-20 | 中国科学院高能物理研究所 | 一种超导腔中温退火方法 |
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Inventor after: Wang Xiaoli Inventor after: Wang Nuanrang Inventor after: Cui Yongshun Inventor after: Yang Renfu Inventor after: Gao Lianshan Inventor after: Nian Feng Inventor before: Wang Nuanrang Inventor before: Cui Yongshun Inventor before: Yang Renfu Inventor before: Gao Lianshan Inventor before: Nian Feng |
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Effective date of registration: 20170905 Address after: 300450 Dagang District, Bei'an, Tianjin Binhai New Area, 11-3-401 Patentee after: Wang Xiaoli Address before: 100854 Haidian District, Beijing, box 142, box office, 408 Patentee before: Beijing Radio Measuring and Testing Institute |
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