CN103456617A - Production method of illuminating element - Google Patents

Production method of illuminating element Download PDF

Info

Publication number
CN103456617A
CN103456617A CN2013101656136A CN201310165613A CN103456617A CN 103456617 A CN103456617 A CN 103456617A CN 2013101656136 A CN2013101656136 A CN 2013101656136A CN 201310165613 A CN201310165613 A CN 201310165613A CN 103456617 A CN103456617 A CN 103456617A
Authority
CN
China
Prior art keywords
cutting
semiconductor wafer
ejection
rotating knife
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2013101656136A
Other languages
Chinese (zh)
Other versions
CN103456617B (en
Inventor
生驹英之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Publication of CN103456617A publication Critical patent/CN103456617A/en
Application granted granted Critical
Publication of CN103456617B publication Critical patent/CN103456617B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Dicing (AREA)

Abstract

The invention provides a production method of an illuminating element capable of inhibiting damages on illuminating points during the cutting of a semiconductor wafer to produce the illuminating element. After one edge of a row of the illuminating element (30) along the illuminating points (30A) is formed, the semiconductor wafer (22) can be cut at a distance from the edge, and therefore the other edge (30C) of the illuminating element (30) is formed, and the distance between the other edge (30C) and the illuminating points (30A) is further than the distance between the edge (30B) and the illuminating points (30A).By forming the other edge (30C), the illuminating element (30) can be cut away from the semiconductor wafer (22), and therefore during the forming of the other edge (30C), even when the side of the illuminating element (30), which is cut away from the semiconductor wafer (22), the damages on the illuminating points (30A) can be inhibited, because a blade (46) is separate from the illuminating points (30A).

Description

The manufacture method of light-emitting component
Technical field
The present invention relates to the manufacture method of light-emitting component.
Background technology
Record in patent documentation 1 and can prevent because of the disperse cutting method of breakage of the cutting tip that produces of chip that cutting forms.
Such cutting method specifically: a plurality of the first spacing tracks that utilize cutting tip to have to form at a predetermined angle and the machined object of the second spacing track are cut along the first spacing track and the second spacing track, while after cutting the first spacing track, cutting the second spacing track, with the base side of cutting tip, towards the mode of the undressed area side of machined object, cut.
The prior art document
Patent documentation 1: TOHKEMY 2001-85365 communique
Summary of the invention
Problem of the present invention is, when cutting semiconductor chip is manufactured light-emitting component, suppresses luminous point and sustains damage.
The manufacture method of the light-emitting component of invention 1 of the present invention is characterised in that, it possesses: preparatory process, the semiconductor wafer that will form with the predetermined distance of predesignating the row of multiple row luminous point is fixed in fixed station, in order to manufacture a plurality of light-emitting components that are rectangle and are formed with a plurality of luminous points, wherein, described a plurality of luminous points of described light-emitting component form a line in the mode than close to another edge along an edge of long side direction;
The first cutting action, the described semiconductor wafer that will in described preparatory process, be fixed in described fixed station forms a described edge of described light-emitting component along the row cutting of described luminous point, afterwards, separate the described predetermined distance ground described semiconductor wafer of cutting and form another edge with respect to a described edge; And
The second cutting action, after described the first cutting action, use rotating knife along with the crossing short side direction of described long side direction, the described semiconductor wafer that is fixed in described fixed station being cut, thereby cut out described light-emitting component from described semiconductor wafer.
The manufacture method of the light-emitting component of invention 2 of the present invention is on the basis of invention 1, it is characterized in that, in described the first cutting action, use the first rotating knife that forms described rotating knife to cut the described long side direction of described semiconductor wafer with predetermined total cutting times, and, use the first ejection parts towards described the first rotating knife ejection cutting fluid, when described the first rotating knife cuts described semiconductor wafer, counter block calculates with respect to the remaining residue cutting times of described total cutting times or calculates the cutting times that has cut described semiconductor wafer, in described the second cutting action, cut the described short side direction of described semiconductor wafer with the second rotating knife while rotating the described rotating knife of formation that cuts described semiconductor wafer, and, use the second ejection parts towards described the second rotating knife ejection cutting fluid, when described the first cutting action, before the described residue cutting times calculated by described counter block or described cutting times reach pre-determined number, cutting fluid is stopped from described the second ejection parts ejection, after described residue cutting times or described cutting times have reached described pre-determined number, make cutting fluid from described the second ejection parts ejection.
The manufacture method of the light-emitting component of invention 3 of the present invention is on the basis of invention 1, it is characterized in that, in described the first cutting action, use the first rotating knife that forms described rotating knife to cut the described long side direction of described semiconductor wafer with predetermined total cutting times, and, use the first ejection parts towards described the first rotating knife ejection cutting fluid, when described the first rotating knife cuts described semiconductor wafer, counter block calculates with respect to the remaining residue cutting times of described total cutting times or calculates the cutting times that has cut described semiconductor wafer, in described the second cutting action, cut the described short side direction of described semiconductor wafer with the second rotating knife while rotating the described rotating knife of formation that cuts described semiconductor wafer, and, use the second ejection parts towards described the second rotating knife ejection cutting fluid, when described the first cutting action, before the described residue cutting times calculated by described counter block or described cutting times reach pre-determined number, make cutting fluid stop from described the second ejection parts ejection and described the second rotating knife is stopped the rotation, after described residue cutting times or described cutting times have reached described pre-determined number, make cutting fluid from described the second ejection parts ejection, and make described the second rotating knife rotation.
The invention effect
Manufacture method according to the light-emitting component of invention 1 of the present invention, when manufacturing the mode formed a line with the edge along long side direction by cutting semiconductor chip and be formed with the light-emitting component of a plurality of luminous points, with the situation that forms an edge after forming another edge away from luminous point, edge of ratio of light-emitting component, compare, when cutting semiconductor chip is manufactured light-emitting component, the luminous point that can be suppressed at light-emitting component formation sustains damage.
Manufacture method according to the light-emitting component of invention 2 of the present invention, with the cut state that becomes cutting semiconductor at the second rotating knife, made in the past cutting fluid stop comparing from the situation of the second ejection parts ejection, can suppress the consumption of cutting fluid, and, when the second rotating knife becomes cut state, can suppress the skew of cutting position.
Manufacture method according to the light-emitting component of invention 3 of the present invention, with cut state making the second rotating knife become cutting semiconductor chip, made in the past cutting fluid stop comparing from the second ejection parts ejection and situation that the second rotating knife is stopped the rotation, can suppress the consumption of cutting fluid, and, when the second rotating knife becomes cut state, can suppress the skew of cutting position.
The accompanying drawing explanation
Fig. 1 illustrates the first ejection unit that the wafer cutter sweep of present embodiment uses and the stereogram of the second ejection unit.
Fig. 2 illustrates the first ejection unit that the wafer cutter sweep of present embodiment uses and the vertical view of the second ejection unit.
Fig. 3 illustrates the first ejection unit that the wafer cutter sweep of present embodiment uses and the front view of the second ejection unit.
Fig. 4 is the process chart that the cutting action of the first cutter unit cutting semiconductor chip that the wafer cutter sweep that utilizes present embodiment uses is shown.
Fig. 5 is the block diagram that the control system of the control part that the wafer cutter sweep of present embodiment uses is shown.
The cutaway view of (A) of Fig. 6 and the first cutter unit (B) used for the wafer cutter sweep that present embodiment is shown and the second cutter unit etc.
The cutaway view of (A) of Fig. 7 and the first cutter unit (B) used for the wafer cutter sweep that present embodiment is shown and the second cutter unit etc.
The vertical view of (A) of Fig. 8 and the first cutter unit (B) used for the wafer cutter sweep that present embodiment is shown and the second cutter unit etc.
The vertical view of (A) of Fig. 9 and the first cutter unit (B) used for the wafer cutter sweep that present embodiment is shown and the second cutter unit etc.
Figure 10 is the cutaway view that second cutter unit that the wafer cutter sweep of present embodiment uses etc. is shown.
Figure 11 is the vertical view that the light-emitting component (semiconductor element) that the manufacture method of the semiconductor element by present embodiment produces is shown.
Figure 12 is the vertical view that the semiconductor wafer of the wafer cutter sweep cutting that utilizes present embodiment is shown.
Figure 13 is the stereogram that the first cutter unit that the wafer cutter sweep of present embodiment uses and second cutter unit etc. are shown.
Figure 14 is the stereogram that the wafer cutter sweep of present embodiment is shown.
The first cutter unit that Figure 15 uses for the wafer cutter sweep for utilizing present embodiment comes the cutting action of cutting semiconductor chip to show the process chart of variation.
Label declaration
10: the wafer cutter sweep
12: chuck table (example of fixed station)
22: semiconductor wafer
30: light-emitting component (example of semiconductor element)
30A: luminous point
30B a: edge
30C: another edge
34: counter block
36: the first cutter units (example of the first rotating knife)
38: the second cutter units (example of the second rotating knife)
62: the first ejection unit (examples of the first ejection parts)
64: the second ejection unit (examples of the second ejection parts)
84: control part (example of control assembly).
Embodiment
According to Fig. 1~Figure 15, one example of the manufacture method of the light-emitting component of embodiments of the present invention is described.At first, the wafer cutter sweep used in the manufacture method of this light-emitting component is described.In addition, the arrow Z shown in figure means the vertical direction top.
(overall structure)
As shown in figure 14, wafer cutter sweep 10(cutter sweep) be configured to and comprise: receiver 18 is mounted with semiconductor wafer 22 at this receiver 18; Chuck table 12, its example that is the fixed station for fixing cut semiconductor wafer 22; Conveyance unit 14, chuck table 12 is arrived in its semiconductor wafer 22 conveyances that will be accommodated in receiver 18; Mobile unit 32, it is for moving chuck table 12; Cutter unit 35, it is cut for semiconductor wafer 22 fixing on the chuck table 12 to moving by mobile unit 32; And ejection unit 60, it is for spraying cutting fluids towards cutter unit 35.
(receiver)
The housing 20 of wafer cutter sweep 10 has main body section 20A and outstanding position 20B, and this main body section 20A is rectangular-shaped, and this outstanding position 20B is one distolateral outstanding to vertical direction top from main body section 20A's.
The receiver 18 that is mounted with semiconductor wafer 22 is configured in another distolateral bight of main body section 20A, and the top of receiver 18 is opened wide.
And, thering is not shown Lift Part at receiver 18, this Lift Part makes 22 liftings of loaded semiconductor wafer, and the semiconductor wafer 22 of the superiors is configured in fixing position.
(semiconductor wafer)
Be accommodated in the shape that semiconductor wafer in receiver 18 22 has been cut off for a circular part, as shown in figure 12, semiconductor wafer 22 is attached on cutting belt 26.And the outer circumferential side of this cutting belt 26 is attached on the basic ring 28 of ring-type.Like this, semiconductor wafer 22 is loaded in above-mentioned receiver 18 with the state that is supported in basic ring 28 through cutting belt 26.
And the double dot dash line of drawing in the semiconductor wafer 22 in figure is the cutting position of cut unit 16 cuttings.From this double dot dash line, by utilizing cutter unit 16 cutting semiconductor chips 22, as light-emitting component 30 rectangular in shape of an example of the manufactured semiconductor element gone out.
As shown in figure 11, at this light-emitting component 30, along an edge 30B of long side direction, be formed with a plurality of luminous point 30A that form a line in the mode than close to another edge 30C.In order to manufacture such light-emitting component 30, as shown in Figure 4, be formed with the row of multiple row luminous point 30A with the predetermined distance (H of interval shown in figure) of predesignating at semiconductor wafer 22.
(conveyance unit)
As shown in figure 14, the conveyance unit 14 by semiconductor wafer 22 conveyances to chuck table 12 has: arm position 14A, and its base end part is supported in the inside of outstanding position 20B, and this arm position 14A can move by along continuous straight runs; Flexible position 14B, its base end part is arranged on the terminal part of arm position 14A, and can vertically stretch; And adsorption site 14C, it is arranged on the terminal part of flexible position 14B, and for adsorbing basic ring 28.
According to this structure, conveyance unit 14 will be accommodated in the semiconductor wafer 22 of the superiors of receiver 18 and pick up by basic ring 28, to chuck table 12 conveyances.
(chuck table)
As shown in figure 10, chuck table 12 has the support zone 12A from supported underneath semiconductor wafer 22.Support zone 12A overlooks and observes rounded shape, at support zone 12A, is formed with a plurality of not shown attraction holes, and described attraction hole is for adsorbing semiconductor wafers 22 across cutting belt 26.
And chuck table 12 has rotating and moving device of configuration-changeable 24 at the downside of support zone 12A, this rotating and moving device of configuration-changeable 24 makes the rotate in a circumferential direction movement of supporting portion 12A along support zone 12A.
(mobile unit)
And, as shown in figure 14, there is above-mentioned mobile unit 32, this mobile unit 32 make chuck table 12 can accept position (with reference to Figure 14) but and between cutting position, move, the described position of accepting is the position that can accept by the semiconductor wafer 22 of conveyance unit 14 conveyances, but described cutting position is the position that can utilize cutter unit 16 cutting semiconductor chips 22.
Mobile unit 32 makes chuck table 12 mobile at the first direction with the vertical direction quadrature (arrow directions X in figure).And, but mobile unit 32 and utilizes cutter unit 16 to carry out cutting semiconductor chip 22 by the chuck table 12 that is configured in cutting position is moved back and forth along first direction.
In addition, the operation about cutting semiconductor chip 22 describes in detail in the back.
(cutter unit)
But cutter unit 35 is disposed at above the vertical direction of the chuck table 12 of cutting position configuration, as shown in Figure 13, Figure 14, cutter unit 35 has as the first cutter unit 36 of an example of the first rotating knife and is configured in second cutter unit 38 of an example of conduct the second rotating knife on the side of the first cutter unit 36.The first cutter unit 36 and the second cutter unit 38 are identical structures, therefore for the first cutter unit 36, are specifically described here, omit the explanation of the second cutter unit 38.
The first cutter unit 36 has: main shaft 42, and it is supported for and can rotates by casing 40 cylindraceous; Circular blade 46, flange 44 that it is installed by means of the end at main shaft 42 and being fixed; And cap assembly 70, it covers blade 46 from top.
Casing 40 forms extend along the second direction (arrow Y-direction in figure) with vertical direction and first direction quadrature cylindric.And the base end side of casing 40 has the driver element 48 of the base end part of support machine casing 40.
This driver element 48 makes casing 40 mobile at vertical direction (Z direction) and second direction (Y-direction), and is used in blade 46 rotations of cutting semiconductor chip 22 through main shaft 42.
Particularly, in vertical direction (Z direction), driver element 48 makes casing 40 move to service position (with reference to (A) of Fig. 6) and retreating position (with reference to (B) of Fig. 6), described service position is the position that can utilize blade 46 cutting semiconductor chips 22, and described retreating position is the position that blade 46 is kept out of the way from semiconductor wafer 22.
Particularly, in second direction (Y-direction), driver element 48 makes the first cutter unit 36 move along second direction, thereby changes the cutting position (with reference to (A) of Fig. 4) of the semiconductor wafer 22 on second direction.
Similarly, the second cutter unit 38 has each parts that have with this first cutter unit 36: casing 50, main shaft 52, flange 54, blade 56, driver element 58 and cap assembly 72.
(ejection unit)
For the ejection unit 60 that sprays cutting fluid, have as the first ejection unit 62 of an example of the first ejection parts with as the second ejection unit 64 of an example of the second ejection parts, this the first ejection unit 62 is towards the first cutter unit 36 ejection cutting fluids, and this second ejection unit 64 is towards the second cutter unit 38 ejection cutting fluids.
The first ejection unit 62 and the second ejection unit 64 are identical structures, therefore for the first ejection unit 62, are specifically described here.
As shown in Figure 2 and Figure 3, the first ejection unit 62 has: bleed pipe 72A and bleed pipe 72B, and they are towards surface and the back side ejection cutting fluid of blade 46; Bleed pipe 74, its ejection of peripheral end face towards blade 46 cutting fluid; And a pair of bleed pipe 76, they are towards the cutting part cut by the blade 46 ejection cutting fluid of semiconductor wafer 22.And bleed pipe 72A, 72B, bleed pipe 74 and bleed pipe 76 are fixed in cap assembly 70, and move together along with the movement of the first cutter unit 36.
As shown in Figure 3, from second direction, observe, bleed pipe 72A, 72B are configured to extend along first direction, and bleed pipe 72A is configured to the surface (disposing the face of a side of flange 44) of blade 46 opposed, and bleed pipe 72B is configured to the back side of blade 46 opposed.
As shown in Figure 2, be formed with a plurality of perforates 73 at bleed pipe 72A, 72B in the opposed mode in the surface with blade 46 or the back side.And cutting fluid mobile in bleed pipe 72A, 72B sprays towards surface and the back side of blade 46 from terminal part and the perforate 73 of bleed pipe 72A, 72B.
As shown in Figure 2 and Figure 3, the peripheral end face of the terminal part of bleed pipe 74 and blade 46 is opposed.Thus, in bleed pipe 74, mobile cutting fluid sprays towards the peripheral end face of blade 46 from the terminal part of bleed pipe 74.
As shown in Figure 2, a pair of bleed pipe 76 configures in the mode across bleed pipe 74 on second direction.And as shown in Figure 3, the cutting part cut by blade 46 of the terminal part of bleed pipe 76 and semiconductor wafer 22 is opposed.Thus, in bleed pipe 76, mobile cutting fluid sprays towards the cutting part of semiconductor wafer 22 from the terminal part of bleed pipe 76.
And, as shown in Figure 1, at bleed pipe 72A, 72B, bleed pipe 74 and bleed pipe 76, be connected with valve 78A, 78B, valve 80 and valve 82, supply with cutting fluid through valve 78A, 78B, valve 80 and valve 82 to bleed pipe 72A, 72B, bleed pipe 74 and bleed pipe 76.And the switching of each valve is controlled by the control part 84 of the example as control assembly described later.
With this first the ejection unit 62 similarly, second the ejection unit 64 has; Bleed pipe 86A, 86B, bleed pipe 88 and bleed pipe 90 and valve 92A, 92B, valve 94 and valve 96.
(counter block)
Above-mentioned the first cutter unit 36 cuts the semiconductor wafer fixing at holding components 12A 22 with predetermined total cutting times (the total number of times cut along first direction in a semiconductor wafer 22) while rotating.And, there is counter block 34(with reference to Fig. 5 at wafer cutter sweep 10), when the first cutter unit 36 cutting semiconductor chip 22, this counter block 34 calculates with respect to the remaining residue cutting times of above-mentioned total cutting times.
(control part)
Wafer cutter sweep 10 has: rotating and moving device of configuration-changeable 24(is with reference to Figure 10), it makes the support zone 12A of chuck table 12 in rotary moving; Mobile unit 32(is with reference to Figure 14), it makes chuck table 12 move along first direction; Driver element 48, it is arranged at the first cutter unit 36; Driver element 58(is with reference to Figure 13), it is arranged at the second cutter unit 38; And control part 84, it controls the switching (with reference to Fig. 5) of each valve.
And, as shown in Figure 5, the residue cutting times of this control part 84 based on being calculated by counter block 34, control valve 92A, 92B, valve 94 and valve 96, make cutting fluid from the second ejection unit 64 ejections.
In addition, for the control of 84 pairs of each parts of control part, explanation in manufacturing process's (manufacture method) of light-emitting component 30 described later.
(effect)
Next, for the effect of wafer cutter sweep 10, according to the manufacturing process's (manufacture method) that utilizes wafer cutter sweep 10 to manufacture light-emitting component 30, describe.In the accompanying drawing used in the following description, suitably omit parts ground and put down in writing with each operation of easy to understand.
The tabular semiconductor wafer 22 that is formed with the row of multiple row luminous point 30A with the predetermined distance (the interval H shown in Fig. 4) of predesignating is supported on basic ring 28(with reference to Figure 12 through cutting belt 26), and as shown in figure 14, this semiconductor wafer 22 is loaded in receiver 18.
(preparatory process)
Chuck table 12 is pre-configured in can accept position.Conveyance unit 14 will be loaded in the semiconductor wafer 22 of the superiors of receiver 18 and pick up by basic ring 28, and to being configured in chuck table 12 conveyances that can accept position.
Conveyance is absorbed and fixed at the support zone 12A of chuck table 12 to the semiconductor wafer 22 of chuck table 12.In addition, under this state, semiconductor wafer 22 is fixed at support zone 12A: produced the long side direction of light-emitting component 30 of (cutting out) by semiconductor wafer 22 along first direction.
(the first cutting action)
In preparatory process, after semiconductor wafer 22 is fixed on chuck table 12, utilize the first cutter unit 36 cutting semiconductor chips 22, thereby form the edge of the long side direction of light-emitting component 30.In addition, the first cutter unit 36 and the second cutter unit 38 are pre-configured in retreating position.
Particularly, control part 84 is controlled driver element 48, as shown in Fig. 6 (A), makes the first cutter unit 36 move to service position.
And control part 84 is controlled driver element 48 and mobile unit 32, as shown in Fig. 6 (A), make blade 46 to direction of arrow rotation, and make chuck table 12 mobile to the side (left side in figure) in first direction.Thus, the side from first direction (left side in figure) is towards the edge (cutting times is 1) of the long side direction of opposite side (right side in figure) formation arrangement light-emitting component 30 in a first direction.
After one side of the long side direction of light-emitting component 30 forms, control part 84 is controlled driver element 48 and mobile unit 32, makes the first cutter unit 36 move to retreating position, and chuck table 12 is moved to the opposite side in first direction.
After the first cutter unit 36 moves to retreating position, control part 84 is controlled driver element 48, makes the first cutter unit 36 of retreating position mobile to change the cutting position of semiconductor wafer 22 to the side (right side shown in Fig. 8 (A)) in second direction.
Then, as mentioned above, control part 84 makes the first cutter unit 36 move to service position as shown in Fig. 6 (A), and makes chuck table 12 mobile to the side (left side in figure) in first direction.Thus, the side from first direction (left side in figure) is towards the edge (cutting times is 2) of the long side direction of opposite side (right side in figure) formation light-emitting component 30.
Repeatedly carry out this step, thereby, as shown in Fig. 8 (A), the opposite side from second direction (left side in figure) forms the edge of the long side direction of light-emitting component 30 successively.That is to say, in first cutting action at the edge of the long side direction that forms light-emitting component 30, blade 46 rotations of the first cutter unit 36, the first cutter unit 36 becomes cut state, the rotation of the blade 56 of the second cutter unit 38 stops, and the second cutter unit 38 becomes the cutting dormant state.Thus, edge 30B, the 30C of the long side direction of light-emitting component 30 all form.
Here, when utilizing the first cutter unit 36 cutting semiconductor chip 22, form the edge 30B(of the row along luminous point 30A of light-emitting component 30 at cutting semiconductor chip 22 with reference to Figure 11) afterwards, separate above-mentioned predetermined distance cutting semiconductor chip 22 (the interval H shown in Figure 11) with respect to an edge 30B, thus the edge 30B of ratio that forms light-emitting component 30 from another edge 30C(away from luminous point 30A with reference to Figure 11) (with reference to Fig. 4).
On the other hand, at the first cutter unit 36 in cut state and the second cutter unit 38 during in the cutting dormant state, as shown in Figure 1, the switching of control part 84 control valve 78A, 78B, valve 80 and valve 82, make from forming each bleed pipe 74,76,78 ejection cutting fluids of the first ejection unit 62.
And the switching of control part 84 control valve 92A, 92B, valve 94 and valve 96, before the residue cutting times calculated by counter block 34 reaches determined (being scheduled to) number of times, stop from forming each bleed pipe ejection of the second ejection unit 64 cutting fluid.In addition, the switching of control part 84 control valve 92A, 92B, valve 94 and valve 96, after the residue cutting times calculated by counter block 34 reaches determined number of times, cutting fluid is sprayed towards the second cutter unit 38 of cutting dormant state from each bleed pipe that forms the second ejection unit 64.That is to say, after the residue cutting times has reached determined number of times, cutting fluid is sprayed from each bleed pipe that forms the second ejection unit 64 towards the second cutter unit 38 of cutting dormant state.
(the second cutting action)
In the first cutting action, at 36 pairs of semiconductor wafers 22 of the first cutter unit, cut total cutting times and, after having formed the edge of long side direction of light-emitting component 30, utilized the second cutter unit 38 to form the edge of the short side direction of light-emitting components 30.
Particularly, control part 84 is controlled driver element 48, makes the first cutter unit 36 move to retreating position, and controls mobile unit 32, make chuck table 12 mobile to the opposite side (right side shown in Figure 14) in first direction, make semiconductor wafer 22 leave cutter unit 35.And control part 84 is controlled rotating and moving device of configuration-changeable 24, makes chuck table 12 90-degree rotations.
Then, control part 84 is controlled driver element 58, as shown in Fig. 6 (B), makes the second cutter unit 38 move to service position.
And control part 84 is controlled driver element 58 and mobile unit 32, as shown in Fig. 6 (B), make blade 56 to direction of arrow rotation, and make chuck table 12 mobile to the side (left side in figure) in first direction.Thus, the side from first direction (in figure left side) forms the edge 30D(of short side direction of light-emitting component 30 with reference to Figure 11 towards opposite side (right side in figure)).
After one side of the short side direction of light-emitting component 30 forms, control part 84 is controlled driver element 58 and mobile unit 32, makes the second cutter unit 38 move to retreating position, and chuck table 12 is moved to the opposite side in first direction.
And control part 84 is controlled driver element 48, make the second cutter unit 38 of retreating position mobile to change the cutting position of semiconductor wafer 22 to the side (right side shown in Fig. 8 (B)) in second direction.
In addition, as mentioned above, control part 84 makes the second cutter unit 38 move to service position as shown in Fig. 6 (B), and makes chuck table 12 mobile to the side (left side in figure) in first direction.Thus, the side from first direction (left side in figure) is towards the edge 30D of the short side direction of opposite side (right side in figure) formation light-emitting component 30.
Here, as shown in Fig. 8 (B), from the side (in figure right side) of center side towards second direction of the second direction of semiconductor wafer 22, form successively the edge 30D of the short side direction of light-emitting component 30.Therefore, on the right side of the semiconductor wafer 22 shown in (B) of Fig. 8, form the edge 30D of the short side direction of light-emitting component 30.
When the right side of the semiconductor wafer 22 as shown in (B) as Fig. 8 forms the edge 30D(of short side direction of light-emitting component 30 with reference to Figure 11) after, control part 84 is controlled driver element 58 and mobile unit 32, make the second cutter unit 38 move to retreating position, and chuck table 12 is moved to the opposite side in first direction.
Then, control part 84 is controlled rotating and moving device of configuration-changeable 24, makes chuck table 12 Rotate 180 degree.Thus, in semiconductor wafer 22, the scope of edge 30D that has formed the short side direction of light-emitting component 30 is changed in second direction.
And control part 84 is controlled driver element 58, as shown in Fig. 7 (A), makes the second cutter unit 38 move to service position.
And, repeatedly carry out operation same as described above, thereby, as shown in Fig. 9 (A), from the center side of the second direction of semiconductor wafer 22, form successively the edge 30D of the short side direction of light-emitting component 30 to the side (right side in figure) second direction.Thus, the edge 30D of the short side direction of light-emitting component 30 all forms.
Edge 30B, the 30C of light-emitting component 30,30D(are with reference to Figure 11) all form after, control part 84 is controlled driver element 48 and driver element 58, as shown in Fig. 7 (B), Fig. 9 (B), make the first cutter unit 36 and the second cutter unit 38 move to retreating position.Like this, by utilizing wafer cutter sweep 10 cutting semiconductor chips 22, produce a plurality of light-emitting components 30.
Here, when the first cutter unit 36, when cutting dormant state and the second cutter unit 38 in cut state, the switching of control part 84 control valve 92A, 92B, valve 94 and valve 96, make cutting fluid from forming each bleed pipe ejection of the second ejection unit 64.
That is to say, in the first cutting action, after the residue cutting times has reached determined cutting times, from each bleed pipe that forms the second ejection unit 64, continue the ejection cutting fluid.
Such as described above, when the first cutter unit 36 in cut state and the second cutter unit 38 during in the cutting dormant state, before the residue cutting times calculated by counter block 34 reaches determined number of times, control part 84 stops from forming each bleed pipe ejection of the second ejection unit 64 cutting fluid, and, after the residue cutting times has reached determined number of times, control part 84 makes cutting fluid from the second ejection unit 64 ejections.
Thus, when utilizing the second cutter unit 38 cutting semiconductor chip 22, due to the temperature of blade 56 in predetermined scope, therefore compare with make the situation that cutting fluid sprays always the consumption that has suppressed cutting fluid, and, when making the second cutter unit 38 in the cutting dormant state while becoming cut state, suppressed the skew of cutting position.
And, by suppressing the skew of cutting position, the size fluctuation of the profile of light-emitting component 30 is suppressed, thereby the size of the profile of light-emitting component 30 is in allowed band.
And, in the first cutting action, at an edge 30B(of the row along luminous point 30A that form light-emitting component 30 with reference to Figure 11) afterwards, separate predetermined distance cutting semiconductor chip 22 (the interval H as shown in Fig. 4, Figure 11) with respect to an edge 30B, thus the edge 30B of ratio that forms light-emitting component 30 from another edge 30C(away from luminous point 30A with reference to Figure 11).
Like this, form and light-emitting component 30 is cut off from semiconductor wafer 22 from the 30C ground, another edge away from the row of luminous point 30A than an edge 30B, thus, when forming another edge 30C, even the light-emitting component of the side cut off from semiconductor wafer 22 30 shakes, due to blade 46 and luminous point 30A wide apart, thereby suppressed the damage of luminous point 30A.
And, as shown in Fig. 8 (B), the edge 30D of the short side direction of light-emitting component 30 forms to the side (right side in figure) second direction successively from the center side of the second direction of semiconductor wafer 22.
Therefore, as shown in figure 10, unwanted less than the light-emitting component 30 fragment 102(produced by cutting semiconductor chip 22 is with reference to Fig. 9 (B)) can not disperse to flange 54 sides of the second cutter unit 38, but disperse to casing 50 sides.Owing to can not occurring to disperse and the inclined plane 54A that collides flange 54 bounces back into the situation of semiconductor wafer 22 to flange 54 sides, therefore suppressed the damage of luminous point 30A.
In addition, understand in detail the present invention for specific execution mode, but the invention is not restricted to described execution mode, it is apparent can adopting within the scope of the invention other various execution modes to those skilled in the art.For example, in the above-described embodiment, after the residue cutting times calculated by counter block 34 has reached determined number of times, control part 84 makes cutting fluid spray towards the second cutter unit 38 of cutting dormant state from each bleed pipe that forms the second ejection unit 64, but can be also after the residue cutting times has reached determined number of times, when cutting fluid is sprayed from each bleed pipe that forms the second ejection unit 64, control part 84 is controlled driver elements 58 and is made blade 56 rotations.Like this, by blade 56 rotations that make to cut the second cutter unit 38 under dormant state, thereby the temperature of blade 56 integral body is equably in predetermined scope.
In addition, in the above-described embodiment, counter block 34 calculates the residue cutting times, but can be also to calculate the cutting times of cutting semiconductor chip.
In addition, in the above-described embodiment, each bleed pipe possesses respectively valve, but can be also that the first ejection unit 62 and the second ejection unit 64 respectively possess a valve.
In addition, in the above-described embodiment, by making the first cutter unit 36 to the side shifting in second direction, and in the first cutting action, after an edge 30B of the row along luminous point 30A that form light-emitting component 30, the edge 30B of ratio that forms light-emitting component 30 from another edge 30C(away from luminous point 30A with reference to Fig. 4), but as shown in figure 15, in the situation that the situation of luminous point 110A and present embodiment configures symmetrically, can be also to move and after forming the edge 110B of the row along luminous point 110A of light-emitting component 110 at a side direction opposite side that makes the first cutter unit 36 from second direction, the edge 110B of ratio that forms light-emitting component 110 is from another edge 110C away from luminous point 110A.

Claims (3)

1. the manufacture method of a light-emitting component, it possesses:
Preparatory process, the semiconductor wafer that will form with the predetermined distance of predesignating the row of multiple row luminous point is fixed in fixed station, in order to manufacture a plurality of light-emitting components that are rectangle and are formed with a plurality of luminous points, wherein, described a plurality of luminous points of described light-emitting component form a line in the mode than close to another edge along an edge of long side direction;
The first cutting action, the described semiconductor wafer that will in described preparatory process, be fixed in described fixed station forms a described edge of described light-emitting component along the row cutting of described luminous point, afterwards, separate the described predetermined distance ground described semiconductor wafer of cutting and form another edge with respect to a described edge; And
The second cutting action, after described the first cutting action, use rotating knife along with the crossing short side direction of described long side direction, the described semiconductor wafer that is fixed in described fixed station being cut, thereby cut out described light-emitting component from described semiconductor wafer.
2. the manufacture method of light-emitting component according to claim 1,
In described the first cutting action, use the first rotating knife that forms described rotating knife to cut the described long side direction of described semiconductor wafer with predetermined total cutting times, and, use the first ejection parts towards described the first rotating knife ejection cutting fluid,
When described the first rotating knife cuts described semiconductor wafer, counter block calculates with respect to the remaining residue cutting times of described total cutting times or calculates the cutting times that has cut described semiconductor wafer,
In described the second cutting action, cut the described short side direction of described semiconductor wafer with the second rotating knife while rotating the described rotating knife of formation that cuts described semiconductor wafer, and, use the second ejection parts towards described the second rotating knife ejection cutting fluid
When described the first cutting action, before the described residue cutting times calculated by described counter block or described cutting times reach pre-determined number, cutting fluid is stopped from described the second ejection parts ejection, after described residue cutting times or described cutting times have reached described pre-determined number, make cutting fluid from described the second ejection parts ejection.
3. the manufacture method of light-emitting component according to claim 1,
In described the first cutting action, use the first rotating knife that forms described rotating knife to cut the described long side direction of described semiconductor wafer with predetermined total cutting times, and, use the first ejection parts towards described the first rotating knife ejection cutting fluid,
When described the first rotating knife cuts described semiconductor wafer, counter block calculates with respect to the remaining residue cutting times of described total cutting times or calculates the cutting times that has cut described semiconductor wafer,
In described the second cutting action, cut the described short side direction of described semiconductor wafer with the second rotating knife while rotating the described rotating knife of formation that cuts described semiconductor wafer, and, use the second ejection parts towards described the second rotating knife ejection cutting fluid
When described the first cutting action, before the described residue cutting times calculated by described counter block or described cutting times reach pre-determined number, make cutting fluid stop from described the second ejection parts ejection and described the second rotating knife is stopped the rotation, after described residue cutting times or described cutting times have reached described pre-determined number, make cutting fluid from described the second ejection parts ejection, and make described the second rotating knife rotation.
CN201310165613.6A 2012-05-30 2013-05-08 Production method of illuminating element Active CN103456617B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012123336A JP5146618B1 (en) 2012-05-30 2012-05-30 Method for manufacturing light emitting device
JP2012-123336 2012-05-30

Publications (2)

Publication Number Publication Date
CN103456617A true CN103456617A (en) 2013-12-18
CN103456617B CN103456617B (en) 2017-05-03

Family

ID=47890527

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310165613.6A Active CN103456617B (en) 2012-05-30 2013-05-08 Production method of illuminating element

Country Status (2)

Country Link
JP (1) JP5146618B1 (en)
CN (1) CN103456617B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113275193A (en) * 2020-02-20 2021-08-20 东京毅力科创株式会社 Substrate liquid processing apparatus and liquid discharge evaluation method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10256324A (en) * 1997-03-14 1998-09-25 Toshiba Microelectron Corp Semiconductor wafer, manufacture of semiconductor device and ic card
CN101297393A (en) * 2005-11-24 2008-10-29 株式会社瑞萨科技 Fabricating method for semiconductor device
US20090121337A1 (en) * 2005-11-10 2009-05-14 Yoshiyuki Abe Semiconductor device manufacturing method and semiconductor
CN102347276A (en) * 2010-07-26 2012-02-08 株式会社迪思科 Cutting method
WO2012017771A1 (en) * 2010-08-06 2012-02-09 日亜化学工業株式会社 Light emitting element manufacturing method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001150240A (en) * 1999-11-24 2001-06-05 Amada Co Ltd Method and device for starting fluid on for cutting machine
JP3708871B2 (en) * 2001-12-20 2005-10-19 株式会社シチズン電子 Semiconductor package assembly
JP4851060B2 (en) * 2002-03-12 2012-01-11 浜松ホトニクス株式会社 Manufacturing method of semiconductor laser device
JP5457660B2 (en) * 2008-11-07 2014-04-02 アピックヤマダ株式会社 Cutting method and cutting apparatus
JP5657935B2 (en) * 2010-07-08 2015-01-21 株式会社ディスコ Cutting equipment

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10256324A (en) * 1997-03-14 1998-09-25 Toshiba Microelectron Corp Semiconductor wafer, manufacture of semiconductor device and ic card
US20090121337A1 (en) * 2005-11-10 2009-05-14 Yoshiyuki Abe Semiconductor device manufacturing method and semiconductor
CN101297393A (en) * 2005-11-24 2008-10-29 株式会社瑞萨科技 Fabricating method for semiconductor device
CN102347276A (en) * 2010-07-26 2012-02-08 株式会社迪思科 Cutting method
WO2012017771A1 (en) * 2010-08-06 2012-02-09 日亜化学工業株式会社 Light emitting element manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113275193A (en) * 2020-02-20 2021-08-20 东京毅力科创株式会社 Substrate liquid processing apparatus and liquid discharge evaluation method
CN113275193B (en) * 2020-02-20 2023-11-14 东京毅力科创株式会社 Substrate liquid processing apparatus and liquid discharge evaluation method

Also Published As

Publication number Publication date
JP5146618B1 (en) 2013-02-20
CN103456617B (en) 2017-05-03
JP2013251326A (en) 2013-12-12

Similar Documents

Publication Publication Date Title
US7338345B2 (en) Cutting machine
KR101598573B1 (en) 3-d printer having dual stage
CN103448151A (en) Wafer cutting device and production method of semiconductor element
CN101941248B (en) Cutting device
CN107210206A (en) Shearing device and cutting-off method
CN103084950A (en) Processing method for wafer
KR20110102261A (en) Developing apparatus
CN105023867A (en) Transportation device and cutting device of plate-like object
CN105027698A (en) Electronic circuit component mounting machine
CN103456617A (en) Production method of illuminating element
EP2517236A1 (en) Semiconductor wafer transport system
CN102887636A (en) Dividing apparatus
JP4079179B2 (en) Work transfer device and electronic component transfer device
JP5026235B2 (en) Substrate cutting device
KR20130126500A (en) Cleaning apparatus
CN109315089A (en) Electronic part mounting and electronic component separation method
CN105904029A (en) Cutting apparatus
CN105313334B (en) Holding jig generating means
CN103722494A (en) Grinding apparatus
CN106625235B (en) Glass three-point fix device and glass grinding system
KR101446719B1 (en) An apparatus for slicing a ingot
CN105690579B (en) It keeps tool, keep tool unit and scoring device
KR101502150B1 (en) Solder ball supplier
US7659743B2 (en) Method and apparatus for testing electronic components within horizontal and vertical boundary lines of a wafer
EP3324720B1 (en) Head unit of component mounter

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: Tokyo, Japan

Patentee after: Fuji film business innovation Co.,Ltd.

Address before: Tokyo, Japan

Patentee before: Fuji Xerox Co.,Ltd.

CP01 Change in the name or title of a patent holder