CN103454709A - Infrared cut-off filter and lens module - Google Patents
Infrared cut-off filter and lens module Download PDFInfo
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- CN103454709A CN103454709A CN2012101718706A CN201210171870A CN103454709A CN 103454709 A CN103454709 A CN 103454709A CN 2012101718706 A CN2012101718706 A CN 2012101718706A CN 201210171870 A CN201210171870 A CN 201210171870A CN 103454709 A CN103454709 A CN 103454709A
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Abstract
The invention provides an infrared cut-off filter which comprises a substrate and an infrared cut-off film. The infrared cut-off film is plated on the substrate. The substrate is made of sapphire. The infrared cut-off film is used for filtering infrared light rays in light rays, a film system structure of the infrared cut-off film is (xHyL)<eta>, the eta is larger than or equal to 30 and is smaller than or equal to 80, the x is larger than 1 and is smaller than 2, the y is larger than 1 and is smaller than 2, the eta is a positive integer, the H represents layers with high refractive indexes and the thicknesses equal to 1/4 of the central wavelength, the L represents layers with low refractive indexes and the thicknesses equal to 1/4 of the central wavelength, xH represents layers with high refractive indexes and the thicknesses equal to x/4 of the central wavelength, yL represents layers with high refractive indexes and the thicknesses equal to y/4 of the central wavelength, and the eta is the number of stacked cycles of the layers with the high refractive indexes and the layers with the low refractive indexes. The infrared cut-off filter has the advantage that the infrared cut-off film is plated on the substrate made of the sapphire, so that an infrared filtering effect of the sapphire substrate can be effectively improved. The invention further provides a lens module comprising the infrared cut-off filter.
Description
Technical field
The present invention relates to a kind of optical element, particularly a kind of cutoff filter and a kind of camera lens module that uses this cutoff filter.
Background technology
Sapphire is widely used in imaging system because having the advantages such as high rigidity and high-wearing feature.Yet sapphire is higher to the transmissivity of Infrared, and if can not carry out filtering to described Infrared, image quality that will deteriorated imaging system.
Summary of the invention
In view of this, be necessary to provide a kind of and can improve cutoff filter and a kind of camera lens module that uses this cutoff filter of the employing sapphire of image quality as substrate.
A kind of cutoff filter, it comprises a substrate and an IR-cut film.Described substrate comprises a upper surface and the lower surface relative with described upper surface, and described IR-cut film plating is located at described upper surface.Described substrate adopts sapphire to make.Described IR-cut film is for the Infrared of filtering light, and its film structure is (xHyL)
η, 30≤η≤80,1<x<2,1<y<2; η is positive integer.The high refractive index layer that wherein H is 1/4 centre wavelength thickness, the low-index layer that L is 1/4 centre wavelength thickness, the high refractive index layer that xH is x/4 centre wavelength thickness, the high refractive index layer that yL is y/4 centre wavelength thickness, η is high refractive index layer and the stacking periodicity of low-index layer.
A kind of camera lens module, it comprises a lens barrel, at least one optical element and a cutoff filter.Described lens barrel comprises a thing side and a picture side relative with described thing side, forms a receiving space between described thing side and described picture side, offers a light well be connected with described receiving space on described thing side.Described at least one eyeglass is housed in described receiving space.Described cutoff filter is arranged on the outer thing side of described lens barrel and described light well is sealed.Described cutoff filter comprises a substrate and an IR-cut film.Described substrate comprises a upper surface and the lower surface relative with described upper surface, and described IR-cut film plating is located at described upper surface.Described substrate adopts sapphire to make.Described IR-cut film is for the Infrared of filtering light, and its film structure is (xHyL)
η, 30≤η≤80,1<x<2,1<y<2; η is positive integer.The high refractive index layer that wherein H is 1/4 centre wavelength thickness, the low-index layer that L is 1/4 centre wavelength thickness, the high refractive index layer that xH is x/4 centre wavelength thickness, the high refractive index layer that yL is y/4 centre wavelength thickness, η is high refractive index layer and the stacking periodicity of low-index layer.
Cutoff filter provided by the invention is established one deck IR-cut film by plating on the substrate adopting sapphire to make; effectively improved sapphire substrate to the reflectivity of Infrared with the filtering Infrared; thereby can the image quality of the camera lens module that uses this cutoff filter not impacted; and so this cutoff filter is arranged on this camera lens module and can utilizes sapphire high rigidity and high-wearing feature to protect this optical element, and prevent this cutoff filter from being scratched and affect image quality.
The accompanying drawing explanation
Fig. 1 is the structural representation of the cutoff filter that provides of first embodiment of the invention.
Fig. 2 is the structural representation of the cutoff filter that provides of second embodiment of the invention.
Fig. 3 is the structural representation that uses the camera lens module of the cutoff filter in Fig. 1 or Fig. 2.
The main element symbol description
| |
100 |
| |
10 |
| |
11 |
| |
12 |
| The IR- |
20 |
| Anti-reflecting layer | 30 |
| The camera lens module | 200 |
| Lens barrel | 110 |
| The thing side | 111 |
| The picture side | 112 |
| Receiving space | 113 |
| Light well | 114 |
| Eyeglass | 120 |
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
As shown in Figure 1, be the cutoff filter 100 that first embodiment of the invention provides, it comprises that a substrate 10 and a plating are located at the IR-cut film 20 on described substrate 10.Described cutoff filter 100 is for the Infrared part of filtering light.
Described substrate 10 is tabular, and it adopts sapphire material to make.Described sapphire belongs to corundum family mineral, and trigonal system, have hexagonal structure.Described sapphire main chemical compositions is alundum (Al2O3) (Al
2o
3), its refractive index is 1.760-1.757, this sapphire crystallization direction is a axle (11
0), c-axis (0001), m axle (10
0).The transmissivity of the Infrared that described sapphire is 825-1300nm to wavelength is greater than 85%.Described substrate 10 comprises upper surface 11 and a lower surface 12 relative with described upper surface 11.
Described IR-cut film 20 is to plate by the mode of sputter or evaporation the upper surface 11 that is located at described substrate 10, its part of Infrared for filtering light.Described IR-cut film 20 is formed to the direction away from this upper surface 11 is stacking along described upper surface 11 by a plurality of high refractive index layers and low-index layer.The film structure of described IR-cut film 20 is (xHyL)
η, 30≤η≤80,1<x<2,1<y<2; η is positive integer; The high refractive index layer that wherein H is 1/4 centre wavelength thickness, the low-index layer that L is 1/4 centre wavelength thickness, the high refractive index layer that xH is x/4 centre wavelength thickness, the high refractive index layer that yL is y/4 centre wavelength thickness, η is high refractive index layer and the stacking periodicity of low-index layer.In present embodiment, 40≤η in described film structure≤70.In present embodiment, centre wavelength is for seeing through or the intermediate value of the wavelength coverage of filtering light.
Described high refractive index layer is selected titania (TiO
2) layer, its refractive index is 2.705; Described low-index layer is silicon dioxide (SiO
2) layer, its refractive index is 1.499.Be appreciated that the material that described high refractive index layer and described low-index layer also can be suitable by other refractive indexes forms.
The transmissivity of the Infrared that 100 pairs of wavelength of described cutoff filter are 825-1300nm is less than 2%, thereby makes light after described cutoff filter 100, and most Infrared are by filtering.
As shown in Figure 2, be the cutoff filter 100a that second embodiment of the invention provides, the difference of the cutoff filter 100 that itself and the first embodiment provide is: on the lower surface 12 of described substrate 10, plating is provided with an anti-reflecting layer 30.
Described anti-reflecting layer 30 is to plate by the mode of sputter or evaporation the lower surface 12 that is located at described substrate 10, and it is for improving the reflectivity to the Infrared of light.Described anti-reflecting layer 30 is formed to the direction away from this lower surface 12 is stacking along described lower surface 12 by a plurality of high refractive index layers and low-index layer.The film structure of described anti-reflecting layer 30 is (mHnL)
δ, 4≤δ≤8,1<m<2,1<n<2; δ is positive integer; The high refractive index layer that wherein H is 1/4 centre wavelength thickness, the low-index layer that L is 1/4 centre wavelength thickness, the high refractive index layer that mH is m/4 centre wavelength thickness, the high refractive index layer that nL is n/4 centre wavelength thickness, δ is high refractive index layer and the stacking periodicity of low-index layer.In present embodiment, 5≤δ in described film structure≤6.
Described high refractive index layer is selected titania (TiO
2) layer, its refractive index is 2.705; Described low-index layer is silicon dioxide (SiO
2) layer, its refractive index is 1.499.Be appreciated that the material that described high refractive index layer and described low-index layer also can be suitable by other refractive indexes forms.
Infrared through described IR-cut film 20 further reflects through described anti-reflecting layer 30, thereby make the transmissivity of the Infrared that described cutoff filter 100a is 825-1300nm to wavelength be less than 1%, light is after described cutoff filter 100a, and most Infrared are by filtering.
As shown in Figure 3, be the cutoff filter 100 that uses embodiment of the present invention to provide, the camera lens module 200 of 100a, described camera lens module 200 also comprises a lens barrel 110 and at least one eyeglass 120.Described lens barrel 110 comprises a thing side 111 and a picture side 112 relative with described thing side 111, forms a receiving space 113 between described thing side 111 and described picture side 112, offers a light well 114 be connected with described receiving space 113 on described thing side 111.Described at least one eyeglass 120 is housed in described receiving space 113.Described cutoff filter 100,100a is arranged on the outer thing side 111 of described lens barrel 110 and described light well 114 is sealed.Described cutoff filter 100,100a on the one hand can be for the Infrared filtering in the light that will be projected to lens barrel 110, on the other hand because substrate 10 has the protecting sheathing that higher hardness can be used as described camera lens module 200.Being appreciated that also can be by described cutoff filter 100, and 100a is housed in described receiving space 113 and by described light well 114 and seals.
Cutoff filter provided by the invention is established one deck IR-cut film by plating on the substrate adopting sapphire to make; effectively improved sapphire substrate to the reflectivity of Infrared with the filtering Infrared; thereby can the image quality of the camera lens module that uses this cutoff filter not impacted; and so this cutoff filter is arranged on this camera lens module and can utilizes sapphire high rigidity and high-wearing feature to protect this optical element, and prevent this cutoff filter from being scratched and affect image quality.
Be understandable that, for the person of ordinary skill of the art, can make change and the distortion that other various pictures are answered by technical conceive according to the present invention, and all these change and distortion all should belong to the protection domain of the claims in the present invention.
Claims (10)
1. a cutoff filter, it comprises a substrate and an IR-cut film, and described substrate comprises a upper surface and the lower surface relative with described upper surface, and described IR-cut film plates and is located at described upper surface; Described substrate adopts sapphire to make; Described IR-cut film is for the Infrared of filtering light, and its film structure is (xHyL)
η, 30≤η≤80,1<x<2,1<y<2; η is positive integer; The high refractive index layer that wherein H is 1/4 centre wavelength thickness, the low-index layer that L is 1/4 centre wavelength thickness, the high refractive index layer that xH is x/4 centre wavelength thickness, the high refractive index layer that yL is y/4 centre wavelength thickness, η is high refractive index layer and the stacking periodicity of low-index layer.
2. cutoff filter as claimed in claim 1, is characterized in that: 40≤η in described film structure≤70.
3. cutoff filter as claimed in claim 1 is characterized in that: described high refractive index layer is selected titanium dioxide layer, and its refractive index is 2.705; Described low-index layer is silicon dioxide layer, and its refractive index is 1.499.
4. cutoff filter as claimed in claim 1, it is characterized in that: described sapphire refractive index is 1.760-1.757; This sapphire crystallization direction is a axle (11
0), c-axis (0001), m axle (10
0).
5. cutoff filter as claimed in claim 1, it is characterized in that: described cutoff filter also comprises that a plating is located at the anti-reflecting layer of the lower surface of substrate, described anti-reflecting layer is for strengthening the reflectivity to the Infrared of light.
6. cutoff filter as claimed in claim 5 is characterized in that: the film structure of described anti-reflecting layer is (mHnL)
δ, 4≤δ≤8,1<m<2,1<n<2; δ is positive integer; The high refractive index layer that wherein H is 1/4 centre wavelength thickness, the low-index layer that L is 1/4 centre wavelength thickness, the high refractive index layer that mH is m/4 centre wavelength thickness, the high refractive index layer that nL is n/4 centre wavelength thickness, δ is high refractive index layer and the stacking periodicity of low-index layer.
7. cutoff filter as claimed in claim 6, is characterized in that: 5≤δ in the film structure of described anti-reflecting layer≤6.
8. cutoff filter as claimed in claim 6 is characterized in that: described high refractive index layer is selected titanium dioxide layer, and its refractive index is 2.705; Described low-index layer is silicon dioxide layer, and its refractive index is 1.499.
9. a camera lens module, it comprises a lens barrel, at least one optical element and a cutoff filter; Described lens barrel comprises a thing side and a picture side relative with described thing side, forms a receiving space between described thing side and described picture side, offers a light well be connected with described receiving space on described thing side; Described at least one eyeglass is housed in described receiving space; Described cutoff filter is arranged on the outer thing side of described lens barrel and described light well is sealed; Described cutoff filter comprises a substrate and an IR-cut film, and described substrate comprises a upper surface and the lower surface relative with described upper surface, and described IR-cut film plating is located at described upper surface; Described substrate adopts sapphire to make.
10. described IR-cut film is for the Infrared of filtering light, and its film structure is (xHyL)
η, 30≤η≤80,1<x<2,1<y≤2; η is positive integer; The high refractive index layer that wherein H is 1/4 centre wavelength thickness, the low-index layer that L is 1/4 centre wavelength thickness, the high refractive index layer that xH is x/4 centre wavelength thickness, the high refractive index layer that yL is y/4 centre wavelength thickness, η is high refractive index layer and the stacking periodicity of low-index layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012101718706A CN103454709A (en) | 2012-05-30 | 2012-05-30 | Infrared cut-off filter and lens module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101718706A CN103454709A (en) | 2012-05-30 | 2012-05-30 | Infrared cut-off filter and lens module |
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| CN103454709A true CN103454709A (en) | 2013-12-18 |
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| CN2012101718706A Pending CN103454709A (en) | 2012-05-30 | 2012-05-30 | Infrared cut-off filter and lens module |
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Cited By (7)
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|---|---|---|---|---|
| CN104749733A (en) * | 2013-12-26 | 2015-07-01 | 玉晶光电(厦门)有限公司 | Low refection lens barrel and lens module using the lens barrel |
| CN106443855A (en) * | 2015-08-04 | 2017-02-22 | 长春理工大学 | Broadband pass filter for star simulator imaging system |
| CN107703576A (en) * | 2017-09-29 | 2018-02-16 | 苏州京浜光电科技股份有限公司 | A kind of small offset narrow band pass filter of wide-angle and preparation method thereof |
| CN108008479A (en) * | 2017-12-20 | 2018-05-08 | 无锡奥芬光电科技有限公司 | Cutoff filter and its Film Design method of the large angle incidence without half-wave hole |
| CN108873136A (en) * | 2018-08-07 | 2018-11-23 | 湖北五方光电股份有限公司 | Ultra-thin plastic rubber substrate type cutoff filter and its technology of preparing |
| CN110129737A (en) * | 2019-06-04 | 2019-08-16 | 天通（嘉兴）新材料有限公司 | A kind of production method of CWDM optical filter |
| CN112162343A (en) * | 2020-11-02 | 2021-01-01 | 江西水晶光电有限公司 | Medium-far infrared filter for sensor and preparation method thereof |
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| CN104749733A (en) * | 2013-12-26 | 2015-07-01 | 玉晶光电(厦门)有限公司 | Low refection lens barrel and lens module using the lens barrel |
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| CN107703576A (en) * | 2017-09-29 | 2018-02-16 | 苏州京浜光电科技股份有限公司 | A kind of small offset narrow band pass filter of wide-angle and preparation method thereof |
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| CN108873136A (en) * | 2018-08-07 | 2018-11-23 | 湖北五方光电股份有限公司 | Ultra-thin plastic rubber substrate type cutoff filter and its technology of preparing |
| CN110129737A (en) * | 2019-06-04 | 2019-08-16 | 天通（嘉兴）新材料有限公司 | A kind of production method of CWDM optical filter |
| CN112162343A (en) * | 2020-11-02 | 2021-01-01 | 江西水晶光电有限公司 | Medium-far infrared filter for sensor and preparation method thereof |
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Application publication date: 20131218 |