CN103441130B - 具有静电自防护能力的基板及其制造方法 - Google Patents

具有静电自防护能力的基板及其制造方法 Download PDF

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CN103441130B
CN103441130B CN201310384921.8A CN201310384921A CN103441130B CN 103441130 B CN103441130 B CN 103441130B CN 201310384921 A CN201310384921 A CN 201310384921A CN 103441130 B CN103441130 B CN 103441130B
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substrate
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source
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CN103441130A (zh
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陈曦
冯玉春
袁剑峰
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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Beijing BOE Display Technology Co Ltd
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Abstract

本发明公开了一种具有静电自防护能力的基板及其制造方法，所述基板包括：面板区域；第一栅极金属层和源/漏极金属层，位于所述面板区域的至少一侧外，所述第一栅极金属层与所述源/漏极金属层在其长度方向上平行设置且相互邻近，并且从所述第一栅极金属层向所述源/漏极金属层延伸出至少一个尖端，和/或从所述源/漏极金属层向所述第一栅极金属层延伸出至少一个尖端。

Description

具有静电自防护能力的基板及其制造方法
技术领域
本发明涉及显示技术领域，尤其涉及一种具有静电自防护能力的基板及其制造方法。
背景技术
随着显示技术的不断进步，为了降低制造成本，提高竞争力，TFT-LCD制造业世代线逐步提高，对工艺技术和控制要求更高，静电防护也成为高世代线需要面对的问题之一。通常为了防止制造过程中的静电击穿现象的发生，在面板设计的时候都会加入短路线等设计，但这些设计通常仅针对于回路形成后的制造过程中的静电防护。目前，高世代线的玻璃基板尺寸不断增大，同时大块金属易于积累电荷，因此由连续大面积金属形成的面板区外公共电极成为TFT阵列基板制造过程中静电放电(ESD)的常见发生源。由于大片金属容易聚集电荷，在诸如PECVD设备等的等离子环境，或是设备的滚轮摩擦玻璃边缘的环境等，都会造成局部电场不均，容易导致尖端放电，使得不同层金属发生ESD。此类静电相关不良一直没有彻底的解决方案。
现有技术中为了使面板内部公共电极电压分布均匀，外围公共电极金属采用宽度大且无跨接设计。但是这种设计的缺点是：当局部产生电势差，导致尖端放电时，静电能量大，容易造成ESD不良。
发明内容
本发明所要解决的技术问题是面板区域易发生ESD导致产品不良的问题。
为此目的，本发明提出了一种具有静电自防护能力的基板，包括：面板区域；第一栅极金属层和源/漏极金属层，位于所述面板区域的至少一侧外，所述第一栅极金属层与所述源/漏极金属层在其长度方向上平行设置且相互邻近，并且从所述第一栅极金属层向所述源/漏极金属层延伸出至少一个尖端，和/或从所述源/漏极金属层向所述第一栅极金属层延伸出至少一个尖端。
优选地，所述第一栅极金属层和所述源/漏极金属层在其长度方向上被划分成至少两段。
优选地，所述第一栅极金属层和所述源/漏极金属层设置在所述基板上所述面板区域相对的两侧外。
优选地，上述基板还包括：第二栅极金属层，所述第二栅极金属层位于所述基板上设置有所述第一栅极金属层和所述源/漏极金属层的所述面板区域侧的相邻侧外，并且从所述第二栅极金属层向所述源/漏极金属层延伸出至少一个尖端，和/或从所述源/漏极金属层向所述第二栅极金属层延伸出至少一个尖端。
优选地，所述第二栅极金属层设置在所述基板上所述面板区域相对的两侧外。
优选地，所述第二栅极金属层的宽度大于所述第一栅极金属层的宽度。
优选地，所述第一栅极金属层和所述源/漏极金属层设置在所述基板上所述面板区域相对的两侧外，并且所述第二栅极金属层设置在所述基板上所述面板区域相对的另外两侧外。
优选地，所述第一栅极金属层和所述源/漏极金属层在所述基板上的投影之间具有间距或至少部分重叠。
优选地，所述第二栅极金属层和所述源/漏极金属层在所述基板上的投影之间具有间距或至少部分重叠。
本发明还公开了一种具有静电自防护能力的基板的制造方法，包括：在基底上形成栅极金属膜；对所述栅极金属膜进行构图工艺，以在所述基底上面板区域的至少一侧外形成第一栅极金属层；在所述第一栅极金属层上形成源/漏极金属膜；对所述源/漏极金属膜进行构图工艺，以在所述基底上所述面板区域的所述至少一侧外形成源/漏极金属层；其中，所述第一栅极金属层与所述源/漏极金属层在其长度方向上平行设置且相互邻近，并且从所述第一栅极金属层向所述源/漏极金属层延伸出至少一个尖端，和/或从所述源/漏极金属层向所述第一栅极金属层延伸出至少一个尖端。
优选地，上述方法还包括：在所述第一栅极金属层与所述源/漏极金属层之间形成栅极绝缘膜和半导体有源层，其中，所述栅极绝缘膜覆盖所述第一栅极金属层，并且同时对所述源/漏极金属层和所述半导体有源层进行构图工艺。
优选地，所述对所述栅极金属膜进行构图工艺还包括：在所述基底上形成有所述第一栅极金属层和所述源/漏极金属层的所述面板区域侧的相邻侧外，形成第二栅极金属层，并且从所述第二栅极金属层向所述源/漏极金属层延伸出至少一个尖端，和/或从所述源/漏极金属层向所述第二栅极金属层延伸出至少一个尖端。
优选地，所述第二栅极金属层的宽度大于所述第一栅极金属层的宽度。
优选地，所述第一栅极金属层和所述源/漏极金属层在所述基底上的投影之间具有间距或至少部分重叠。
优选地，所述第二栅极金属层和所述源/漏极金属层在所述基底上的投影之间具有间距或至少部分重叠。
通过采用本发明所公开的上述基板及其制造方法，能够诱导制造工艺过程中产生的静电转移到基板周边，从而减少了面板区域发生静电放电的可能性，有效提高了产品良率。
附图说明
通过参考附图会更加清楚的理解本发明的特征和优点，附图是示意性的而不理解为对本发明进行任何限制，在附图中：
图1示出了根据本发明实施例的具有静电自防护能力的玻璃基板的示意图；
图2示出了根据本发明实施例的具有静电自防护能力的玻璃基板的制造工艺的流程图；
图3示出了根据本发明另一实施例的具有静电自防护能力的玻璃基板的示意图；以及
图4示出了根据本发明另一实施例的具有静电自防护能力的玻璃基板的制造工艺的流程图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
图1示出了根据本发明实施例的具有静电自防护能力的基板的示意图。如图1所示，基板1的中部具有面板区域2，面板区域2的相对两侧外均具有第一栅极金属层3和源/漏极金属层5，并且面板区域2的另外两个相对侧外均具有第二栅极金属层4，并且第一栅极金属层3的宽度小于第二栅极金属层4的宽度，第二栅极金属层4要积累静电电荷，因此需要的宽度要宽一些。第二栅极金属层4和源/漏极金属层5用于积累制造工艺中产生的静电电荷，避免面板区域2中的静电积累。第一栅极金属层3和源/漏极金属层5在其长度方向上平行设置且相互邻近，并且沿其长度方向被划分为若干段，在图2中被示例性地划分为两段。
第二栅极金属层4向源/漏极金属层5延伸出若干尖端，和/或源/漏极金属层5向第一栅极金属层3延伸出若干尖端。当积累的静电能量过大时，由于第二栅极金属层4与源/漏极金属层5之间的电势差不同，能量在这里通过第二栅极金属层4向源/漏极金属层5延伸出的若干尖端而最先释放，使得这两层金属层短路。在短路之后，金属层上的静电聚集的能量将在离该短路位置最近的位置继续释放，即源/漏极金属层5向第一栅极金属层3延伸出若干尖端，从而减小了第二栅极金属层4与源/漏极金属层5之间的静电能量。这样的设计不仅可以将制造工艺中产生的静电诱导至玻璃基板1外围的第二栅极金属层4和源/漏极金属层5，而且可以通过器件自身的静电放电来避免增加玻璃基板周边较粗金属造成的静电能量聚集过大的问题。通过上述结构，避免面板区域2发生静电放电。本领域技术人员应当理解，也可以制作从源/漏极金属层5向第二栅极金属层4延伸的若干尖端或者是从第一栅极金属层3向源/漏极金属层5延伸出的若干尖端，这样也可以实现尖端放电的作用。
优选地，第一、第二栅极金属层和源/漏极金属层由Mo/Al/Mo三层金属叠层构成。在本实施例中，第一、第二栅极金属层与源/漏极金属层在基板上的投影存在间距。
图2示出了根据本发明实施例的具有静电自防护能力的基板的制造工艺的流程图，其中图2所示的截面图为沿图1中的虚线A-A和B-B所截取的截面的截面图。如图2所示，首先在玻璃基板1上沉积栅极金属膜；通过曝光蚀刻的构图工艺对栅极金属膜进行构图，形成第一栅极金属层3和/或第二栅极金属层4；在栅极金属层上沉积栅极绝缘层6以覆盖第一栅极金属层3和/或第二栅极金属层4；在栅极绝缘层6上依次沉积半导体有源层7、欧姆接触层8和源/漏极金属膜；通过曝光蚀刻的构图工艺对半导体有源层7、欧姆接触层8和源/漏极金属膜进行构图，形成源/漏极金属层5；沉积保护层9。
由此，完成了根据本发明实施例的具有静电自防护能力的基板的制造。上述制造工艺过程与面板的制造工艺是同步进行的，并不会引入额外的工艺步骤，并且面板的后续制造工艺不影响所形成的结构。
图3示出了根据本发明另一实施例的具有静电自防护能力的基板的示意图。图3中所示的玻璃基板与图1中所示的基板类似，其区别仅在于第二栅极金属层4上延伸出的尖端与源/漏极金属层5在基板上的投影至少部分重叠，源/漏极金属层5上延伸出的尖端与第一栅极金属层3在基板上的投影至少部分重叠。本领域技术人员应当理解，也可以制作从源/漏极金属层5向第二栅极金属层4延伸的若干尖端或者是从第一栅极金属层3向源/漏极金属层5延伸出的若干尖端，这样也可以实现尖端放电的作用。
图4示出了根据本发明另一实施例的具有静电自防护能力的基板的制造工艺的流程图，其中图4所示的截面图为沿图3中的虚线A-A和B-B所截取的截面的截面图。图4中所示的制造工艺流程与图2中所示的制造工艺流程类似，在此不再累述。
应当注意，上述实施例只是本发明的优选实施例，并非限制本发明。事实上，本领域技术人员可以根据在玻璃基板上制造面板的边缘裕度而选择合适的静电自防护结构。本领域技术人员可以选择将第一栅极金属层和源/漏极金属层仅设置在面板区域的一侧外，或者设置在面板区域的多侧外而无需设置第二栅极金属层。为了节省掩膜曝光的成本，根据本发明实施例的具有静电自防护能力的基板的结构是对称的，但是本领域技术人员可以理解，也可以将基板的设置成非对称的。诸如此类的变型或修改均落入本发明的精神与教导之内。
通过采用本发明所公开的基板及其制造方法，能够诱导制造工艺过程中产生的静电转移到基板周边，从而减少了面板区域发生静电放电的可能性，有效提高产品良率；并且通过自身栅极金属层与源/漏极金属层产生静电放电，从而释放了周边金属层聚集的静电能量，避免了不同工艺阶段的静电累积，使TFT基板具备自防护能力。
虽然结合附图描述了本发明的实施方式，但是本领域技术人员可以在不脱离本发明的精神和范围的情况下作出各种修改和变型，这样的修改和变型均落入由所附权利要求所限定的范围之内。

Claims (15)

1.一种具有静电自防护能力的基板，包括：
面板区域；第一栅极金属层和源/漏极金属层，位于所述面板区域的至少一侧外，所述第一栅极金属层与所述源/漏极金属层在其长度方向上平行设置且相互邻近，并且从所述第一栅极金属层向所述源/漏极金属层延伸出至少一个尖端，和/或从所述源/漏极金属层向所述第一栅极金属层延伸出至少一个尖端。
2.根据权利要求1所述的基板，其中所述第一栅极金属层和所述源/漏极金属层在其长度方向上被划分成至少两段。
3.根据权利要求1所述的基板，其中所述第一栅极金属层和所述源/漏极金属层设置在所述基板上所述面板区域相对的两侧外。
4.根据权利要求1所述的基板，还包括：第二栅极金属层，所述第二栅极金属层位于所述基板上设置有所述第一栅极金属层和所述源/漏极金属层的所述面板区域侧的相邻侧外，并且从所述第二栅极金属层向所述源/漏极金属层延伸出至少一个尖端，和/或从所述源/漏极金属层向所述第二栅极金属层延伸出至少一个尖端。
5.根据权利要求4所述的基板，其中所述第二栅极金属层设置在所述基板上所述面板区域相对的两侧外。
6.根据权利要求4所述的基板，其中所述第二栅极金属层的宽度大于所述第一栅极金属层的宽度。
7.根据权利要求4所述的基板，其中所述第一栅极金属层和所述源/漏极金属层设置在所述基板上所述面板区域相对的两侧外，并且所述第二栅极金属层设置在所述基板上所述面板区域相对的另外两侧外。
8.根据权利要求1至3中的任一项所述的基板，其中所述第一栅极金属层和所述源/漏极金属层在所述基板上的投影之间具有间距或至少部分重叠。
9.根据权利要求4至7中的任一项所述的基板，其中所述第二栅极金属层和所述源/漏极金属层在所述基板上的投影之间具有间距或至少部分重叠。
10.一种具有静电自防护能力的基板的制造方法，包括：
在基底上形成栅极金属膜；
对所述栅极金属膜进行构图工艺，以在所述基底上面板区域的至少一侧外形成第一栅极金属层；
在所述第一栅极金属层上形成源/漏极金属膜；
对所述源/漏极金属膜进行构图工艺，以在所述基底上所述面板区域的所述至少一侧外形成源/漏极金属层；
其中，所述第一栅极金属层与所述源/漏极金属层在其长度方向上平行设置且相互邻近，并且从所述第一栅极金属层向所述源/漏极金属层延伸出至少一个尖端，和/或从所述源/漏极金属层向所述第一栅极金属层延伸出至少一个尖端。
11.根据权利要求10所述的方法，还包括：
在所述第一栅极金属层与所述源/漏极金属层之间形成栅极绝缘膜和半导体有源层，
其中，所述栅极绝缘膜覆盖所述第一栅极金属层，并且同时对所述源/漏极金属层和所述半导体有源层进行构图工艺。
12.根据权利要求10所述的方法，所述对所述栅极金属膜进行构图工艺还包括：
在所述基底上形成有所述第一栅极金属层和所述源/漏极金属层的所述面板区域侧的相邻侧外，形成第二栅极金属层，并且
从所述第二栅极金属层向所述源/漏极金属层延伸出至少一个尖端，和/或从所述源/漏极金属层向所述第二栅极金属层延伸出至少一个尖端。
13.根据权利要求12所述的方法，其中所述第二栅极金属层的宽度大于所述第一栅极金属层的宽度。
14.根据权利要求10或11所述的方法，其中所述第一栅极金属层和所述源/漏极金属层在所述基底上的投影之间具有间距或至少部分重叠。
15.根据权利要求12或13所述的方法，其中所述第二栅极金属层和所述源/漏极金属层在所述基底上的投影之间具有间距或至少部分重叠。
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