CN103430240A - 用于太阳能应用的过孔填料 - Google Patents

用于太阳能应用的过孔填料 Download PDF

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Publication number
CN103430240A
CN103430240A CN2011800525714A CN201180052571A CN103430240A CN 103430240 A CN103430240 A CN 103430240A CN 2011800525714 A CN2011800525714 A CN 2011800525714A CN 201180052571 A CN201180052571 A CN 201180052571A CN 103430240 A CN103430240 A CN 103430240A
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CN
China
Prior art keywords
electroconductive paste
weight
size
micron
silver powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011800525714A
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English (en)
Chinese (zh)
Inventor
G·E·小格雷迪
C·M·麦金利
A·S·沙科赫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heraeus Precious Metals North America Conshohocken LLC
Original Assignee
Heraeus Precious Metals North America Conshohocken LLC
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Filing date
Publication date
Application filed by Heraeus Precious Metals North America Conshohocken LLC filed Critical Heraeus Precious Metals North America Conshohocken LLC
Publication of CN103430240A publication Critical patent/CN103430240A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/12—Silica-free oxide glass compositions
    • C03C3/16—Silica-free oxide glass compositions containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/20—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing titanium compounds; containing zirconium compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H10F77/223—Arrangements for electrodes of back-contact photovoltaic cells for metallisation wrap-through [MWT] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0261—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias characterised by the filling method or the material of the conductive fill
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1126—Firing, i.e. heating a powder or paste above the melting temperature of at least one of its constituents
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Photovoltaic Devices (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Glass Compositions (AREA)
CN2011800525714A 2010-09-01 2011-09-01 用于太阳能应用的过孔填料 Pending CN103430240A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US37895910P 2010-09-01 2010-09-01
US61/378,959 2010-09-01
PCT/US2011/050145 WO2012031078A1 (en) 2010-09-01 2011-09-01 Via fill material for solar applications

Publications (1)

Publication Number Publication Date
CN103430240A true CN103430240A (zh) 2013-12-04

Family

ID=45773271

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011800525714A Pending CN103430240A (zh) 2010-09-01 2011-09-01 用于太阳能应用的过孔填料

Country Status (8)

Country Link
US (1) US20140332067A1 (https=)
EP (1) EP2612331A4 (https=)
JP (1) JP2013545215A (https=)
KR (1) KR20130124482A (https=)
CN (1) CN103430240A (https=)
BR (1) BR112013004884A2 (https=)
SG (1) SG188359A1 (https=)
WO (1) WO2012031078A1 (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109659067A (zh) * 2018-12-06 2019-04-19 中国科学院山西煤炭化学研究所 用于perc晶体硅太阳能电池的正银浆料及制法
CN110402490A (zh) * 2016-11-18 2019-11-01 申泰公司 填充材料以及基板通孔的填充方法
CN112272851A (zh) * 2018-07-06 2021-01-26 千住金属工业株式会社 导电性糊料和烧结体
US12100647B2 (en) 2019-09-30 2024-09-24 Samtec, Inc. Electrically conductive vias and methods for producing same
CN120452883A (zh) * 2025-07-08 2025-08-08 浙江晶科新材料有限公司 银浆和太阳能电池
US12476117B2 (en) 2018-03-30 2025-11-18 Samtec, Inc. Electrically conductive vias and methods for producing same

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013036510A1 (en) * 2011-09-09 2013-03-14 Ferro Corporation Silver solar cell contacts
US9374892B1 (en) * 2011-11-01 2016-06-21 Triton Microtechnologies Filling materials and methods of filling through holes for improved adhesion and hermeticity in glass substrates and other electronic components
KR20140114881A (ko) * 2012-01-18 2014-09-29 헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨 유기 아연 화합물을 포함하는 태양 전지 금속화
US20130319496A1 (en) * 2012-06-01 2013-12-05 Heraeus Precious Metals North America Conshohocken Llc Low-metal content electroconductive paste composition
EP2891158A1 (en) * 2012-08-31 2015-07-08 Heraeus Deutschland GmbH & Co. KG An electro-conductive paste comprising ag nano-particles and spherical ag micro-particles in the preparation of electrodes
US9763317B2 (en) * 2013-03-14 2017-09-12 Cisco Technology, Inc. Method and apparatus for providing a ground and a heat transfer interface on a printed circuit board
ES2684721T3 (es) * 2013-04-02 2018-10-04 Heraeus Deutschland GmbH & Co. KG Partículas que comprenden AI, Si y Mg en pastas electroconductoras y preparación de células fotovoltaicas
ES2649662T3 (es) * 2013-07-09 2018-01-15 Heraeus Deutschland GmbH & Co. KG Una pasta electroconductora que comprende partículas de Ag con una distribución multimodal del diámetro en la preparación de electrodos en células solares MWT
US9966353B2 (en) * 2013-12-25 2018-05-08 Mitsubishi Materials Corporation Power module substrate, method of producing same, and power module
CN103824613A (zh) * 2014-03-18 2014-05-28 山西盛驰科技有限公司 一种高性能晶体硅太阳能电池背场的浆料
CN106463198A (zh) * 2014-05-19 2017-02-22 太阳化学公司 包含氧化铋的银浆和其在太阳能电池中的用途
JP6164256B2 (ja) * 2015-07-08 2017-07-19 住友ベークライト株式会社 熱伝導性組成物、半導体装置、半導体装置の製造方法、および放熱板の接着方法
CN105097070B (zh) * 2015-07-22 2017-05-31 深圳市春仰科技有限公司 太阳能电池正面导电银浆及其制备方法
WO2018058181A1 (en) * 2016-09-30 2018-04-05 Dyesol Ltd A solar module and a method of fabricating a solar module
DE102021000640A1 (de) * 2021-02-09 2022-08-11 Azur Space Solar Power Gmbh Verfahren zur Strukturierung einer Isolationsschicht auf einer Halbleiterscheibe

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CN1211750A (zh) * 1997-09-18 1999-03-24 纳幕尔杜邦公司 热助光敏组合物及其方法
US20070095387A1 (en) * 2003-11-27 2007-05-03 Shuichi Fujii Solar cell module
CN101785113A (zh) * 2007-08-29 2010-07-21 费罗公司 用于太阳能电池中的烧透应用的厚膜膏

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JPH1012045A (ja) * 1996-06-25 1998-01-16 Sumitomo Metal Mining Co Ltd 低温焼成用導電ペースト
US6384473B1 (en) * 2000-05-16 2002-05-07 Sandia Corporation Microelectronic device package with an integral window
JP4805621B2 (ja) * 2005-07-07 2011-11-02 株式会社ノリタケカンパニーリミテド 導電性ペースト
EP2015367A4 (en) * 2006-04-25 2011-10-05 Sharp Kk ELECTRO-CONDUCTIVE PASTE FOR A SOLAR BATTERY ELECTRODE
JP4714633B2 (ja) * 2006-04-25 2011-06-29 シャープ株式会社 太陽電池電極用導電性ペースト
CN101663711B (zh) * 2007-04-25 2013-02-27 费罗公司 含银和镍或银和镍合金的厚膜导体配方及由其制成的太阳能电池
CN101609849B (zh) * 2009-07-13 2010-11-03 中南大学 太阳能电池正面电极用银导体浆料及其制备工艺

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1211750A (zh) * 1997-09-18 1999-03-24 纳幕尔杜邦公司 热助光敏组合物及其方法
US20070095387A1 (en) * 2003-11-27 2007-05-03 Shuichi Fujii Solar cell module
CN101785113A (zh) * 2007-08-29 2010-07-21 费罗公司 用于太阳能电池中的烧透应用的厚膜膏

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110402490A (zh) * 2016-11-18 2019-11-01 申泰公司 填充材料以及基板通孔的填充方法
US11646246B2 (en) 2016-11-18 2023-05-09 Samtec, Inc. Method of fabricating a glass substrate with a plurality of vias
CN110402490B (zh) * 2016-11-18 2024-03-12 申泰公司 填充材料以及基板通孔的填充方法
US12476117B2 (en) 2018-03-30 2025-11-18 Samtec, Inc. Electrically conductive vias and methods for producing same
CN112272851A (zh) * 2018-07-06 2021-01-26 千住金属工业株式会社 导电性糊料和烧结体
CN109659067A (zh) * 2018-12-06 2019-04-19 中国科学院山西煤炭化学研究所 用于perc晶体硅太阳能电池的正银浆料及制法
US12100647B2 (en) 2019-09-30 2024-09-24 Samtec, Inc. Electrically conductive vias and methods for producing same
CN120452883A (zh) * 2025-07-08 2025-08-08 浙江晶科新材料有限公司 银浆和太阳能电池
CN120452883B (zh) * 2025-07-08 2025-10-31 浙江晶科新材料有限公司 银浆和太阳能电池

Also Published As

Publication number Publication date
EP2612331A4 (en) 2014-12-17
EP2612331A1 (en) 2013-07-10
US20140332067A1 (en) 2014-11-13
JP2013545215A (ja) 2013-12-19
SG188359A1 (en) 2013-04-30
WO2012031078A1 (en) 2012-03-08
BR112013004884A2 (pt) 2016-05-03
KR20130124482A (ko) 2013-11-14

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Application publication date: 20131204