CN103429276B - Spike generation unit and use its spike generator - Google Patents
Spike generation unit and use its spike generator Download PDFInfo
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- CN103429276B CN103429276B CN201280012579.2A CN201280012579A CN103429276B CN 103429276 B CN103429276 B CN 103429276B CN 201280012579 A CN201280012579 A CN 201280012579A CN 103429276 B CN103429276 B CN 103429276B
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- sparking electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
- H01T23/00—Apparatus for generating ions to be introduced into non-enclosed gases, e.g. into the atmosphere
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
- A61L2/00—Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor
- A61L2/02—Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor using physical phenomena
- A61L2/14—Plasma, i.e. ionised gases
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
- A61L2202/00—Aspects relating to methods or apparatus for disinfecting or sterilising materials or objects
- A61L2202/20—Targets to be treated
- A61L2202/26—Textiles, e.g. towels, beds, cloths
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Abstract
The invention provides a kind of spike generation unit, this spike generation unit has: shell portion, and it has peristome in one end of tubular or box like; Sparking electrode, top is inserted in shell portion from peristome by it; With semiconductive portion, it is vertically arranged opposite with described sparking electrode near top, be configured as the electrical power source connection of earthing potential in the periphery in semiconductive portion, from power supply unit, voltage applied to electrical power source connection and sparking electrode, by corona discharge, spike is produced.
Description
Technical field
The present invention relates to spike generation unit and use its spike generator.
Background technology
Current, the known corona discharge that utilizes is to produce the device of ozone and anion etc.This device has needle electrode and ground electrode.Further, between needle electrode and ground electrode, apply high voltage, produce corona discharge in needle electrode top ends.By this corona discharge, produce ozone and anion (for example, referring to patent documentation 1).
In addition, develop one and free radical isoreactivity kind is provided in air, and the spike generator by purifying air based on the purification of this spike.Existing spike generator has: body shell; Needle electrode; The opposite electrode opposed with needle electrode; Alive power supply is executed to needle electrode and opposite electrode; With the adsorption section arranged on the surface of opposite electrode.
In the ozone and anion generating device of patent documentation 1 record, in order to prevent the spark discharged, between the needle electrode as sparking electrode and the ground electrode as opposite electrode, need distance.In addition, due to needle electrode and ground electrode configured in parallel, therefore, the generation direction of ion wind and the generating unit of corona discharge can offset, and the ozone isoreactivity kind of generation cannot effectively spread, and the generation of spike is increased.
Prior art document
Patent documentation
Patent documentation 1:JP JP 2004-18348 publication
Summary of the invention
Spike generation unit of the present invention, has: the shell portion in one end of tubular or box like with peristome; Top is inserted into the sparking electrode in shell portion from peristome; And near top the semiconductive portion vertically arranged opposite with sparking electrode, be configured with the electrical power source connection becoming earthing potential in the periphery in semiconductive portion, from power supply unit, voltage applied to electrical power source connection and sparking electrode, produce spike by corona discharge.
According to such structure, if apply voltage to sparking electrode, then electronics flows to electrical power source connection via semiconductive portion, and therefore, creepage distance is elongated.Consequently, owing to being difficult to cause spark discharge, therefore, it is possible to make the distance of semiconductive portion and sparking electrode close, discharge current increases, so the generation of spike increases.
Accompanying drawing explanation
Fig. 1 is the axonometric chart of the indoor of the spike generator being provided with embodiments of the present invention 1.
Fig. 2 is the sectional view of this spike generator.
Fig. 3 is that the parts of this spike generator configure asynchronous sectional view.
Fig. 4 is the sectional view of this spike generation unit.
Fig. 5 is the exploded perspective view of this spike generation unit.
Fig. 6 is the conductive part of this spike generation unit and the exploded perspective view of insulative substrate.
Fig. 7 is the chart of the surface resistivity in the coating portion of the semiconduction representing this spike generator and the relation of spark distance.
Fig. 8 is the chart representing the arcing distance of this spike generator and the relation of voltage.
The schematic diagram of the electron flow mode of the coating and conductive part of semiconduction when Fig. 9 A is the conductive part of not this spike generation unit.
The schematic diagram of the type of flow of the electronics of the coating and conductive part of semiconduction when Fig. 9 B is the conductive part having this spike generation unit.
Figure 10 is the amplification view of this spike generation unit.
Figure 11 is the schematic diagram of the positive corona discharge representing this spike generator.
Figure 12 is the schematic diagram of the negative corona discharge representing this spike generator.
Figure 13 is the sectional view of the insulative substrate of the spike generator representing embodiments of the present invention 2, adsorption section, sparking electrode, opposite electrode, support component.
Figure 14 is the insulative substrate of this spike generator and the sectional view of adsorption section.
Figure 15 is the axonometric chart of this spike generation unit and support component.
Figure 16 is the expanded view of this spike generation unit and support component.
Figure 17 is plane graph when observing the insulative substrate of this spike generation unit from sparking electrode side.
Figure 18 is the schematic diagram of the positive corona discharge representing this spike generator.
Figure 19 is the figure of the position of the sparking electrode that this spike generator is described.
Figure 20 is the schematic diagram of the negative corona discharge representing this spike generator.
Detailed description of the invention
Below, embodiments of the present invention are described with reference to accompanying drawing.
(embodiment 1)
Fig. 1 is the axonometric chart of the indoor of the spike generator being provided with embodiments of the present invention 1.As shown in Figure 1, on the ground 2 in room 1, spike generator 3 is configured with.Spike generator 3, provides ozone isoreactivity kind in the air in room 1.Then, by the purification based on this spike, carry out the air in clean rooms 1.In addition, because the air comprising spike can touch clothes and curtain etc., the deodorization of clothes and curtain, the effect such as degerming can therefore be expected.
Fig. 2 is the sectional view of this spike generator.Fig. 3 is that the parts of this spike generator configure asynchronous sectional view.Spike generator 3 has: the body shell 6 with air entry 4 and air vent 5; Air supplying part 7; With spike generation unit 8.Air supplying part 7 and spike generation unit 8, be configured in body shell 6.
Body shell 6, by being positioned at the partition board portion 9 of the substantial middle of body shell 6, is divided into wind path portion 10 and spatial portion 11.Wherein, wind path portion 10 is communicated with air entry 4 and air vent 5.
Air supplying part 7 is formed by the motor 12 being fixed in partition board portion 9, the cover portion 14 that to be carried out the blade part 13 that rotates by motor 12 and surround blade part 13.The suction inlet 15 in cover portion 14, opposed with the air entry 4 of body shell 6.The air sucked from air entry 4 by air supplying part 7 is sent to spike generation unit 8, and the air containing the spike produced in spike generation unit 8 is blown from air vent 5.
And spike generation unit 8 in figure 3, has hole portion 21 up along air-supply path.But, as long as the spike produced by the air-supply of air supplying part 7 by indoor of blowing, the position of spike generation unit 8 and towards being not limited to Fig. 3.Such as, spike generation unit 8 body also can be arranged on outside the air-supply path in body shell 6, and possesses the discharge port of spike on air-supply path.In addition, spike generation unit 8 also can be configured at the upper reaches of air supplying part 7.And, also can have multiple spike generation unit 8.
Fig. 4 is the sectional view of this spike generation unit.Fig. 5 is the exploded perspective view of this spike generation unit.Fig. 6 is the conductive part of this spike generation unit and the exploded perspective view of insulative substrate.As shown in Fig. 4 ~ Fig. 6, spike generation unit 8 is formed by coating 18, conductive part 23, electrical power source connection 19 and the power supply unit 20 (shown in Fig. 2, Fig. 3) of insulative substrate 16, sparking electrode 17, semiconduction.Wherein semiconductive portion is made up of coating 18 of insulative substrate 16 and semiconduction.Coating 18 of insulative substrate 16 and semiconduction, has the hole portion 21 of toroidal.Sparking electrode 17 is arranged opposite with insulative substrate 16.Coating 18 of the semiconduction be electrically connected with electrical power source connection 19, vertically arranged opposite with sparking electrode 17 near the top 17a of sparking electrode 17.Then, coating 18 of semiconduction, is generated heat by current flowing, and neighbouring water quantities is increased.Conductive part 23, is set to the coating periphery 33 covering semiconduction.That is, conductive part 23, is set to connect with coating 18 of semiconduction.Therefore, coating 18 of semiconduction, applies voltage via conductive part 23 from power supply unit 20.Electrical power source connection 19, is electrically connected with conductive part 23, becomes earthing potential.Power supply unit 20 pairs of electrical power source connection 19 and sparking electrode 17 apply voltage.Electrical power source connection 19 is formed by the rustless steels such as SUS, aluminum, gold, silver or copper etc.And electrical power source connection 19, is not limited to these materials, it is the material of electric conductivity.Then, spike generation unit 8, applies voltage from power supply unit 20 pairs of electrical power source connection 19 and sparking electrode 17, produces spike by corona discharge.
And even if not providing holes portion 21, spike component is also increased.As described in Patent Document 1, when being configured with needle electrode and ground electrode abreast, because corona discharging area generates to the tip side of needle electrode from needle electrode in ground electrode lateral deviation, therefore, region of discharge diminishes.On the other hand, as embodiments of the present invention 1, when being generally perpendicularly configured with coating 18 of sparking electrode 17 and semiconduction, being formed when sparking electrode 17 is observed is the corona discharging area of coniform expansion.Therefore, the range expansion of corona discharging area, produces more spike.When being provided with hole portion 21, because the end face to hole portion 21 produces corona discharge, therefore, along with the diameter in hole portion 21 changes, the extended mode of corona discharge changes.
As shown in Figure 5, Figure 6, insulative substrate 16, is the flat board of rectangular shape, has hole portion 21 at substantial middle place.And the shape of insulative substrate 16 also can be circular or polygon.In addition, as shown in Figure 2 and Figure 3, the end of insulative substrate 16, is fixed in partition board portion 9 by supporting the support component 22 of spike generation unit 8.
As shown in Figure 4, Figure 5, spike generation unit 8 has: the support component 22 keeping sparking electrode 17; Insulative substrate 16; With fixed cap 24.Support component 22 is shell portions of tubular or box like, at one end has peristome 22a.Sparking electrode 17, inserts top 17a from peristome 22a in support component 22.Shape when support component 22 and fixed cap 24 are assembled, can be set to air can the barrel shape of straight-line pass.Or the shape during assembling of support component 22 and fixed cap 24, can be set to and have air and flow into from the side and the box shape of the peristome of discharging from above.Shape when support component 22 and fixed cap 24 are assembled, is set to box shape in fig. 2, imports air from below, and discharge from the side.In figure 3, be set to barrel shape, import air from below, and discharge from above.
In the parts configuration of Fig. 3, hole portion 21 is opposed with the air vent 5 of body shell 6.A part for the air sucked from air entry 4 by air supplying part 7, by sparking electrode 17 around, is blown to air vent 5 via hole portion 21.
Insulative substrate 16, as long as be difficult to by ozone and free radical corrosion inorganic system or fluororesin.In addition, insulative substrate 16 can be ceramic substrate, also can be the resin substrates such as fluorine.As ceramic substrate, use containing the oxide of Si, Al, Zn, Ti, Mg or composite oxides, carbide, nitride etc., with regard to cost and being easy to obtains, preferential oxidation aluminum.And, the surface resistivity of insulative substrate 16, preferably 10
10Ω/more than.
As shown in Fig. 4 ~ Fig. 6, sparking electrode 17 is rod shape or aciculiform shape, extends from the plane perpendicular of support component 22, opposed with a face of insulative substrate 16.Support component 22 can have multiple opening, and can ventilate.And the top 17a of sparking electrode 17, separates the predetermined distance of several millimeters ~ several 10 millimeter with insulative substrate 16, be positioned at hole portion foreign side 21c and on the approximate centre axle 21b in hole portion 21.Approximate centre axle 21b refers to: the center 21a in passing hole portion, on the axle vertical with insulative substrate 16.The material of sparking electrode 17 is rustless steel, tungsten, titanium and the Ni-Cr alloy etc. of the SUS making corona discharge etc.As long as can discharge, then can use containing any one electrode among carbon, stannum and SiC.
And the top 17a of sparking electrode 17 can be sharp-pointed coniform or cylindric, hemispherical etc.When the top 17a of sparking electrode 17 is sharp-pointed, owing to being easy to cause electric discharge to concentrate, therefore, it is possible to carry out corona discharge by lower voltage.When the shape of needle point is cylindric or hemispherical, charge concentration can not be caused in specific part.Therefore, compared with aciculiform shape, if do not apply high voltage, then do not produce corona discharge.But, under the state of electric charge dispersion, owing to continuing corona discharge, therefore compared with aciculiform shape, become the sparking electrode 17 being difficult to deterioration for a long time.This is because at needle point place, be easy to the concentrated attachment causing the melting of metal and dust due to charge concentration.
As shown in Figure 6, coating 18 of semiconduction, be arranged at hole portion inner surface 21d and with insulative substrate 16 among the opposed locations 16a of sparking electrode.If observe from sparking electrode 17 side, then semiconduction coating 18 shape be ring-shaped.That is, semiconduction coating 18, be arranged at the part opposed with the top 17a of sparking electrode 17.Semiconduction coating 18 surface resistivity, preferably 10
6Ω/more than and be less than 10
10Ω/.
In addition, the assay method of surface resistivity has following 2 kinds of methods, have employed method 1 in embodiments of the present invention 1.Method 1 be on test film with the mode that distance is fixing place ring-type around columned main electrode and encirclement main electrode to electrode.Then, between main electrode and test film, in order to reduce contact resistance, and accompany conducting rubber.Then, main electrode is connected with ground side, applies 1000V to electrode.Be determined at main electrode and to the electric current flowed between electrode, carry out gauging surface resistance R, according to the distance L of the flow direction of electric current on test film with obtain surface resistivity ρ s with the length W of the electrode of the flow direction vertical direction of electric current.I.e. ρ s=R × L/W
The unit of surface resistivity is [Ω/ ] or single use [Ω], but in embodiments of the present invention 1, only used [Ω/ ] that be easy to resistance value distinguish.
Method 2, in the both sides of test film, spaced apart abreast and paste the electric conductivity adhesive tape of equal length.Each electric conductivity adhesive tape, becomes main electrode in method 1 and to electrode.The electric conductivity adhesive tape becoming main electrode is connected with ground side, applies 1000V to the conductive paste band become electrode.Then, the surface resistance R, the distance L of conductive paste interband and the length W of electric conductivity adhesive tape that calculate according to the electric current flowed between these electric conductivity adhesive tapes carry out chart surface resistivity.
At this, use Fig. 7, Fig. 8 that the method that spike generation increases is described.Fig. 7 is the chart of the surface resistivity in the coating portion of the semiconduction representing this spike generator and the relation of spark distance.Fig. 7 is when being applied with-8kV between sparking electrode 17 and electrical power source connection 19, the coating surface resistivity of 18 of semiconduction and the relation of spark distance.Surface resistivity is logarithmic display, spark distance be sparking electrode 17 with coating 18 of semiconduction the shortest space length.When semiconduction coating 18 surface resistivity lower than 10
6during the scope of Ω/, spark distance is 6mm.That is, spike generation unit 8 needs coating 18 of sparking electrode 17 and semiconduction apart more than 6mm.Therefore, spike generator 3 cannot miniaturization.
On the other hand, when semiconduction coating 18 surface resistivity 10
6during the scope of Ω/more than, spark distance is 0mm, does not produce spark.Therefore, sparking electrode 17 and semiconduction coating 18 distance can at below 6mm, spike generator 3 can miniaturization.Owing to having coating 18 of semiconduction near the top 17a of sparking electrode 17, such as, when-8kV is applied with to sparking electrode 17, sparking electrode 17 and semiconduction coating 18 distance can become below 6mm.The 6mm of this distance, sets by applying voltage.
Fig. 8 represents the arcing distance of this spike generator of embodiments of the present invention 1 and the chart of the relation of voltage.Fig. 8 is the relation of arcing distance when being set to fixing by discharge current and voltage.Arcing distance be sparking electrode 17 with coating 18 of semiconduction distance.Discharge current represents the intensity of electric discharge, if discharge current increase, the generation of spike increases.Under the condition that arcing distance is shorter, only increase small voltage, then discharge current increases, and spike generation increases.Such as, under arcing distance 3mm, if voltage increases 0.5kV and is increased to-4.0kV from-3.5kV, then discharge current is from 5 μ A to 30 μ A, about increases by 6 times.On the other hand, when arcing distance is 10mm, even if voltage increases 0.5kV and is increased to-6.6kV from-6.1kV, discharge current is also only changed to 10 μ A from 5 μ A, only increases about 2 times.
That is, as illustrated by the figure 7, when semiconduction coating 18 surface resistivity be 10
6during Ω/more than, if arcing distance can shorten, then by small change in voltage, discharge current will significantly increase.Therefore, make corona discharge high output, spike generation increases.
As shown in Figure 6, the top 17a of sparking electrode 17, preferred disposition is on the approximate centre axle 21b in hole portion 21.Coating 18 of semiconduction, is electrically connected with sparking electrode 17 and electrical power source connection 19.Coating 18 of semiconduction, when being applied with high voltage, electric current flow between sparking electrode 17 and coating 18 of semiconduction, can from coating 18, the conductive part 23 of the outer peripheral face in hole portion 21 via semiconduction, arrival electrical power source connection 19.That is, using sparking electrode 17 as center, coating 18 of semiconduction is positioned at around circumferencial direction, and therefore, current dissipation is in the broad range of coating 18 of semiconduction.Therefore, the air be coated near 18 of semiconduction, in broad range, can produce the increase being caused water quantities by heating.So produce electric discharge dispersedly in broad range, therefore, spike is stable to be produced.
The section shape of the top 17a of sparking electrode 17 and the shape being coated to the hole portion 21 of 18 of semiconduction, can be set to identical.Such as, according to the hole portion 21 relative to toroidal, top 17a is cylindric or hemispherical, namely the sparking electrode 17 that the shape of the vertical section of the long side direction 17c of the sparking electrode of top 17a is rounded, then using sparking electrode 17 as center, broad range produces electric discharge dispersedly in a circumferential direction.Consequently, compared with the situation adopting the sparking electrode 17 of sharp-pointed needle-like with top 17a, be difficult to cause the electric discharge of local to be concentrated.Therefore, the deterioration of sparking electrode 17 can be suppressed, and spike is stably produced.
And, due to semiconduction coating 18 broad range make current dissipation, therefore, the generation of OH free radical isoreactivity kind increases.In addition, owing to can not intensively make the spike of high concentration generate, therefore, the deterioration ground sustained release activity kind of coating 18 of semiconduction is not caused.
In addition, effectively utilize the moisture in air, and the amount of spike is increased.Therefore, do not need to use the adsorbents such as zeolite in order to the trapping of moisture.Therefore, the spike generation unit 8 of safety and persistence excellence is become.And as the shape in hole portion 21, can be not only toroidal, also can be quadrilateral shape, polygon-shaped, elliptical shape.
And the electrode describing the electric discharge receiving sparking electrode 17 is made up of coating 18, the conductive part 23 of semiconduction and electrical power source connection 19.But, coating 18 and electrical power source connection 19 of semiconduction also can be used as electrode.That is, also can be with the semiconduction of the ring-type of insulative substrate 16 same shape coating 18, be electrically connected on electrical power source connection 19.By so, it is simple and easy that spike generation unit 8 becomes structure, is easy to assembling.And, by reducing the thickness of conductive part 23, more small-sized spike generation unit 8 can be made.
In figure 6, conductive part 23 is electrically connected with coating 18 of electrical power source connection 19 and semiconduction.Now, from the distance of sparking electrode 17 to conductive part 23, than from coating 18 of sparking electrode 17 to semiconduction distance.In the example of fig. 6, conductive part 23 is that the metallicity of quadrilateral shape is dull and stereotyped, and has larger than the periphery in hole portion 21 and less than the coating periphery 33 of semiconduction through hole 25.
Therefore, the electric current flowed between sparking electrode 17 and electrical power source connection 19, such as, flows to coating 18 of the semiconduction of the inner surface 21d in the hole portion covering insulative substrate 16 from sparking electrode 17.Electric current afterwards, covering flowing with being coated in 18 of semiconduction of the opposed locations 16a of sparking electrode of insulative substrate 16, via conductive part 23, arrives electrical power source connection 19.That is, because creepage distance is elongated, therefore, spark discharge can not be caused, can the raising of therefore safe.
At this, the surface resistivity of conductive part 23, is less than the surface resistivity of coating 18 of semiconduction.Specifically, semiconduction coating 18 surface resistivity 10
6Ω/more than and be less than 10
10Ω/, the surface resistivity of conductive part 23 is less than 10
6Ω/, the surface resistivity of electrical power source connection 19 is preferably 10
-1Ω/below.
Then, be described for effect when there is conductive part 23.The schematic diagram of the electron flow mode of the coating and conductive part of semiconduction when Fig. 9 A is the conductive part of the spike generation unit not having embodiments of the present invention 1, the schematic diagram of the type of flow of the electronics of the coating and conductive part of semiconduction when Fig. 9 B is the conductive part of the spike generation unit having embodiments of the present invention 1.If the electronics produced by the corona discharge from sparking electrode 17, arrive the P place of coating 18 of the semiconduction of the inner surface 21d in coverage hole portion, then electronics flows to coating 18 of semiconduction from P and arrives electrical power source connection 19 point-blank.On the other hand, if electronics arrives Q place, then electronics arrives electrical power source connection 19 from the surrounding in Q passing hole portion 21 with beeline.As shown in Figure 9 A, when without conductive part 23, among coating 18 of semiconduction, be easy to produce the biased of electron density, it is biased that the amount of the spike produced also is easy to generating portion.
On the other hand, as shown in Figure 9 B, when there being conductive part 23, the electronics arriving R place and the electronics arriving S place all flow to the direction of the diffusion from hole portion 21 to peripheral direction.That is, diffusing electrons equably on coating 18 of semiconduction, the generation of spike is also even, and therefore, the generation of spike increases.In addition, owing to not producing concentrating of the local of electron density, therefore, the partial degradation of coating 18 of generation semiconduction is difficult to.
Conductive part 23 is with the ring-shaped of roughly equidistant extension from the center 21a in hole portion.That is as shown in Figure 6, the top 17a that is positioned at apart from sparking electrode 17 of conductive part 23 is roughly equidistant.
So, the periphery that conductive part 23 is positioned at apart from hole portion 21 is roughly equidistant, therefore, when being applied with high voltage between sparking electrode 17 and electrical power source connection 19, the electric current flowed between sparking electrode 17 and electrical power source connection 19, easily flows equably at conductive part 23 complete cycle.In addition, flow to the electric current of the edge part of coating 18 of semiconduction, the surface resistivity due to conductive part 23 is less than the surface resistivity of coating 18 of semiconduction, therefore easily arrives electrical power source connection 19 via conductive part 23.
That is, semiconduction coating 18 broad range, the dispersion of uniform current ground.And, with the mode streaming current spread to conductive part 23, therefore, current convergence can not be made in the comparatively close limit of coating 18 of semiconduction, and intensively generate spike.In addition, due to can not local pyrexia, therefore, the deterioration of coating 18 of semiconduction can be suppressed.In addition, owing to making current dissipation in the broad range of coating 18 of semiconduction, therefore, the generation of OH free radical increases.
Conductive part 23 preferable alloy system is dull and stereotyped.Conductive part 23, if the center 21a be set to apart from hole portion is roughly equidistant, then also can be formed by the printing of the conductive ink containing Ag, Cu and carbon etc., but when using for a long time, the deterioration of electrically conductive ink is become problem.If metal is dull and stereotyped, then compared with ink, to the excellent oxidation stability of the spike generated by discharging, therefore, spike stably produces.
Conductive part 23 is preferably made up of SUS316L, SUS316, SUS304 or any one implementing among resistance to acid-treated aluminum.These metals, due to high to the resistance of ozone isoreactivity kind, therefore strong to the resistance of the corrosion caused by ozone isoreactivity kind, the durability of conductive part 23 improves.And conductive part 23, is not limited to these, as long as the raw material of electric conductivity.The surface resistivity of conductive part 23, preferably 10
-1Ω/below.
In addition, electrical power source connection 19, also can be set to: connect with the another side of dorsal part in the face being positioned at insulative substrate 16, or connects with the outer peripheral face between a face of insulative substrate 16 and another face.Thus, when the electronics flowed from sparking electrode 17 is when the Surface runoff of insulative substrate 16, the creepage distance carrying out the distance of movement as electronics extends, and is difficult to cause spark discharge.And, be not limited thereto, when electrical power source connection 19 is arranged at insulative substrate 16 surperficial, need to configure under the state fully guaranteeing creepage distance.
Figure 10 is the amplification view of the spike generation unit of embodiments of the present invention 1.As shown in Figure 10, with the opposed locations 16a of sparking electrode and the inner surface 21d in hole portion, there is coating 18 of semiconduction in insulative substrate 16.In addition, hole portion 21 have open relative to sparking electrode 17 open inclined-plane 26.And, become the electrical power source connection 19 of earthing potential, be configured in the coating periphery 33 of semiconduction.Further, coating 18 of semiconduction define more from the opposition side 17b of sparking electrode close to opening the center 27 on inclined-plane, curved surface 32 that thickness is thicker.Such curved surface 32, is formed by following step.
Coating 18 of semiconduction, on the surface of insulative substrate 16, applies semiconducting inks (silk screen printing) by squeegee (squeegee).Semiconducting inks contains the bonding agent of the conductive agent and glass dust etc. of stannum oxide etc.Then, conductive agent and bonding agent are mixed in a solvent or dissolve, becomes semiconducting inks.
Via silk screen, squeegee passes through in the hole portion 21 of insulative substrate 16, and thus, to opening inclined-plane 26, semiconducting inks is forced out.The semiconducting inks of discharge by pressing, being formed more to opening the center 27 on inclined-plane, curved surface 32 that thickness is thicker, opening inclined-plane 26 to cover.
So, open inclined-plane 26, covered by coating 18 of semiconduction.Thus, compared with situation about not tilting with the edge of opening in hole portion 21, the area of the edge of opening opposed with the top 17a of sparking electrode 17, the area namely opening inclined-plane 26 increase.Consequently, cover the surface area that open coating 18 of the semiconduction on inclined-plane 26 opposed with the top 17a of sparking electrode 17 also to increase.In addition, be adhered to the conductive agent opened on inclined-plane 26 to increase.
Thus, the area accepting the electronics discharged from the top 17a of sparking electrode 17 increases.In addition, due to the heating area increase of coating 18 of semiconduction, therefore moisture is decomposed more by corona discharge.So, because the generation of spike increases, the raising of the purification based on spike therefore can be sought.
As long as bonding agent can by conductive agent particle and insulative substrate 16 bonding.Bonding agent contains any one of glass dust, colloid silica, silicate compound, titanate compound, aluminium oxide, zirconium oxide, titania powder or fluororesin particle.Glass dust is chemically inactive, thus preferred owing to having oxidative resistance.The size of bonding agent, in order to make dimensionally stable, and is preferably greater than conductive agent particle, can be set to the size of 2 times ~ about 100 times of conductive agent.
As conductive agent particle, the easiness due to stannum oxide with sludge proof stability and acquisition is thus preferred, and other also can use ZnO, PbO
2, CdO, In
2o
3, T1
2o
3, Ga
2o
3, Fe
3o
4deng oxide conducting material and their composite oxides etc.In addition, also can at stannum oxide (SnO
2) middle doping Sb, as conductive agent.
As coating 18 of semiconduction, as use SnO
2during as conductive agent, use glass as binding agent, SnO
21: 13 ~ 1: 1 with the ratio of glass.That is, preferred conductive agent is 7 ~ 50%, and glass is 93 ~ 50%.Consider intensity aspect, as the glass of bonding agent, need more than 50%.In addition, in order to semiconduction, i.e. surface resistivity are 10
6Ω/more than and be less than 10
10Ω/, and preferably conductive agent drops into more than 20%.
In order to bonding conductive agent, the solvent of bonding agent can be made to volatilize, and implement the heat treated being used for accelerating oxidation polymerization.Such as, at first, semiconducting inks (silk screen printing) is applied on the surface of insulative substrate 16 by squeegee.Then, be coated with the insulative substrate 16 of semiconducting inks, be placed in heating furnace.Now, insulative substrate 16, temporarily can keep certain hour under solvent is easy to the temperature of 100 DEG C of front and back of volatilizing.And, according to the kind of bonding agent, heat to the temperature of adhesive hardens, the maintenance of trip temperature of going forward side by side.Such as, when using colloid silica as bonding agent, preferred hardening temperature more than 180 DEG C, 400 DEG C to 700 DEG C the bests.
When using glass as bonding agent, in glass powder, add the solvent of appropriateness and mix.So there is following method etc.: by the semiconduction ink printing made in insulative substrate 16, be heated to the temperature of glass melting, form the state making conductive agent disperse in glass.When the glass dust containing alkali composition, preferred heating-up temperature is from 600 DEG C to about 800 DEG C.When the glass dust not containing alkali composition, preferred heating-up temperature is from 850 DEG C to 950 DEG C.By these temperature are kept more than 10 minutes, the sclerosis of bonding agent can be promoted and make conductive agent immobilization.And, also can by stannum oxide and glass mixing in the ink made, by the method making insulative substrate 16 flood rear drying, and around insulative substrate 16 attachment conductive agent and bonding agent.
At this, Figure 11 is used to describe situation sparking electrode 17 being applied with to positive voltage.Figure 11 is the schematic diagram of the positive corona discharge of the spike generator representing embodiments of the present invention 1.
As shown in figure 11, between sparking electrode 17 and electrical power source connection 19, if by power supply unit 20 (Fig. 2) to applying positive about more than 3KV and being less than 10KV discharge voltage, then form highfield on sparking electrode 17 surface.Owing to being applied with positive high voltage to sparking electrode 17, therefore, the free electron existed in atmosphere flows into sparking electrode 17.Now, coating 18 of semiconduction in negative state.Because electronics (e) moves, therefore electronics (e) flows to sparking electrode 17 from coating 18 of semiconduction.This state is corona discharge, by the power of corona discharge, produces an example and the OH free radical (OH) of spike.At this, by applying more than 3KV to sparking electrode 17 and being less than the voltage of 10KV, enough spike amounts can be produced.Even if although the applying voltage of sparking electrode 17 is at more than 10kV, also produce spike, due to the side effect of the deterioration of spray point etc. can be there is, be therefore preferably less than the applying voltage of 10kV.In addition, when the applying voltage due to sparking electrode 17 is less than 3kV, the situation of discharge instability can be there is, therefore, the applying voltage of preferred more than 3kV.
If be described in more detail, be then make coating 18 of semiconduction to generate heat by streaming current in coating 18 of semiconduction, therefore, the air be coated near 18 of semiconduction can be heated.At this by the air of heating, from periphery not by the air of heating, due to relative humidity difference, moisture is moved, makes to be increased by the moisture of possessing in the air of heating.Especially, due to a large amount of electric current of perimeter being coated to the hole portion 21 of 18 in semiconduction, therefore, caloric value is many, the water quantities of possessing of air increases.If there is moisture, then except ozone and O
2beyond-the spike that waits, H
2o
2and OH free radical etc. also increases.In the region that the water quantities of hole portion 21 periphery increases, by producing corona discharge, and the moisture in air is used effectively, the amount of spike is increased.In addition, owing to not using the adsorbents such as zeolite in order to the trapping of moisture, therefore, adsorbent degradation can not be produced.
If apply positive high voltage to carry out positive corona discharge to sparking electrode 17, then at the electronics (e) of coating 18 flowings of semiconduction, attract owing to being discharged electrode 17 brute force, therefore can as flown out from coating 18 of semiconduction.If from coating 18 electronics (e) flown out of semiconduction and the oxygen molecule (O be coated to the air of the vicinity of 18 of semiconduction
2) collide, then produce at oxygen molecule (O
2) in add the oxygen molecule anion (O of the state of an electronics (e)
2-).Afterwards, oxygen molecule anion (O
2-) and be that the hydrone being coated to the surrounding of 18 of semiconduction reacts, produce OH free radical (OH) isoreactivity kind.By the semiconduction that water quantities is increased coating 18 periphery produce corona discharge, and moisture is become be easy to react with electronics (e), make the generation of OH free radical (OH) become easy.
In addition, the profile of conductive part 23, if the quadrilateral shape roughly the same with the inside of support component 22, then in the assembling procedure of spike generation unit 8, easily determines the position of conductive part 23.
And in embodiments of the present invention 1, sparking electrode 17 has been applied in positive electricity.But the voltage applied sparking electrode 17 just both can be, also can be negative.
Figure 12 is the schematic diagram of the negative corona discharge of the spike generator representing embodiments of the present invention 1.If to sparking electrode 17, apply negative about more than 3KV by power supply unit 20 and be less than 10KV as discharge voltage, then forming highfield on sparking electrode 17 surface.Owing to being applied with negative high voltage to sparking electrode 17, therefore free electron can be discharged in air.Coating 18 of semiconduction becomes positive side.Consequently, moved by electronics (e), electric current flows to sparking electrode 17 from coating 18 of semiconduction.
As shown in figure 12, from the electronics (e) that sparking electrode 17 discharges to air, due to by semiconduction coating 18 highfield attract, therefore electronics high-speed mobile, with the collision such as the molecule in air.If electronics (e) and the oxygen molecule (O in air
2) collide, then produce at oxygen molecule (O
2) in add the oxygen molecule anion (O of the state of an electronics (e)
2-).If there is moisture, then except ozone and O
2beyond-the spike that waits, H
2o
2and OH free radical (OH) etc. also increases.By oxygen molecule anion (O
2-) react with the hydrone being coated to the surrounding of 18 being present in semiconduction, and produce OH free radical (OH) isoreactivity kind.By the semiconduction that water quantities is increased coating 18 periphery produce corona discharge, moisture becomes and is easy to react with electronics (e), more easily produces OH free radical (OH).
And between sparking electrode 17 and electrical power source connection 19, via coating 18 of semiconduction, streaming current on direction, face, therefore, electric current is in the Surface runoff of insulative substrate 16, and creepage distance is elongated.
From the top 17a of sparking electrode 17, produce the air-flow being called as ion wind.This air-flow is from the top 17a of sparking electrode 17 towards insulative substrate 16.Owing to having hole portion 21 in insulative substrate 16, therefore, the spike of the OH free radical (OH) of generation etc., wears via portion 21 along ion wind, is released.So, coating 18 of semiconduction, is disposed facing near the top 17a of sparking electrode 17.Consequently, the air containing moisture is supplied to all the time by ion wind, and passes from hole portion 21, therefore, causes the decomposition of moisture constantly, stably produces spike.
In the spike generator shown in Fig. 3, by ion wind from air entry 4 to indoor inflow air.Then, this room air, forms exhaust airstream and to indoor discharge via hole portion 21 from air vent 5 by sparking electrode 17 around.Now, also air supplying part 7 can not be set.Therefore, spike device 3 can miniaturization, and it is first-class to be arranged at table.
At this, the spike of the OH free radical (OH) of Figure 11, Figure 12 etc., along with this exhaust airstream is from spike generator 3 to indoor discharge.By containing the spike of this OH free radical (OH) etc. to indoor supply, make antibacterial in air by disactivation.In addition, the air containing spike, decomposes and removes the stink in air.In addition, by making air contact clothes and the curtain etc. containing spike, and deodorization, degerming is carried out to clothes and curtain.
And conductive part 23 also can be set to connect with the periphery of coating 18 of semiconduction.
(embodiment 2)
Embodiments of the present invention 2, replace coating 18 of the semiconduction of embodiment 1, and use adsorption section 18a.In embodiments of the present invention 2, give identical symbol to the structural element identical with embodiment 1, and omit detailed description.
Figure 13 is the sectional view of the insulative substrate of the spike generator representing embodiments of the present invention 2, adsorption section, sparking electrode, opposite electrode, support component.Spike generation unit 8 has: insulative substrate 16; The sparking electrode 17 arranged opposite with insulative substrate 16; The adsorption section 18a connected with insulative substrate 16; Opposite electrode 19a and power supply unit 20 (Fig. 2).And opposite electrode 19a, plays the effect identical with the electrical power source connection 19 of embodiments of the present invention 1.
Adsorption section 18a, be arranged among the inner surface 21d in hole portion and insulative substrate 16 with the opposed locations 16a of sparking electrode.That is, adsorption section 18a is arranged at the inner surface 21d in surface on the upside of the wind of insulative substrate 16 and hole portion, and connects with opposite electrode 19a.The surface resistivity of adsorption section 18a, preferably 10
6Ω/more than and be less than 10
10Ω/.
Figure 14 is the insulative substrate of spike generator and the sectional view of adsorption section of embodiments of the present invention 2.As shown in figure 14, adsorption section 18a is by the adsorbent 28 adsorbed the moisture near insulative substrate 16 and carry out bonding bonding agent 29 to adsorbent 28 and insulative substrate 16 and formed.Adsorbent 28 is that the mean particle diameter of adsorbed water is from 0.5 micron to the particle of several 10 microns.In embodiments of the present invention 2, adsorbent 28 is the zeolites on surface with pore 30.
And, as long as adsorbent 28 has the pore 30 of millimicro rank and the porous structure body that steam can be made condensing in pore 30 by the condensing phenomenon of the capillary tube of so-called Kelvin.That is, can be containing Silicon stone, zeolite, desiccant (Desiccant), allophane, her hair Zirconium stone or any one porous structure body among them.In addition, also can be utilize interparticle gap and the Porous aluminium oxide of adsorbed water, Porous Silicon stone and Porous titanium dioxide.And, if pore 30 is difficult to the mean particle diameter being carried out landfill by the particle of bonding agent 29, then can steam in absorbed air.In addition, adsorbent 28 also can be larger than the mean particle diameter of bonding agent 29.
Bonding agent 29 is such as colloid silica.And bonding agent 29 can be less than the mean particle diameter of the adsorbent 28 of zeolite etc. and larger than pore 30 mean particle diameter.In addition, only otherwise make pore 30 inaccessible, then the bonding agent 29 of glass dust or silicate compound can be adopted.
Figure 15 is the spike generation unit of embodiments of the present invention 2 and the axonometric chart of support component.Figure 16 is the expanded view of this spike generation unit and support component.Figure 17 is plane graph when observing the insulative substrate of this spike generation unit from sparking electrode side.
As shown in Figure 15 ~ Figure 17, the insulative substrate 16 of writing board shape, has hole portion 21 at substantial middle place.Support component 22 is the tubular or the box like that support sparking electrode 17 and opposite electrode 19a.Insulative substrate 16 is arranged on the inner side of support component 22.
Figure 18 is the schematic diagram of the positive corona discharge of the spike generator representing embodiments of the present invention 2.As shown in figure 18, if apply positive more than 3kV to sparking electrode 17 and be less than 10kV as discharge voltage, then form highfield on sparking electrode 17 surface.Owing to applying positive high voltage to sparking electrode 17, the free electron therefore existed in atmosphere flows into sparking electrode 17.Now, because opposite electrode 19a is in negative state, therefore, electronics (e) flows to sparking electrode 17 from opposite electrode 19a.
If be described in more detail, then as shown in figure 14, the insulative substrate 16 of ceramic and adsorbent 28, bonding by bonding agent.Known: the moisture in air, condensing and adsorbed (the condensing phenomenon of capillary tube of Kelvin) by steam in pore 30.Thus, at the adsorption section 18a of zeolite etc., the moisture in air is adsorbed, and electronics becomes and is easy to flowing.At this, as shown in figure 18, if apply positive high voltage to sparking electrode 17 and carry out positive corona discharge, then the electronics in adsorbent 28 is discharged electrode 17 brute force and attracts, electronics (e) high-speed mobile.If electronics (e) and the oxygen molecule (O had near adsorbent 28
2) collide, then produce at oxygen molecule (O
2) in add the oxygen molecule anion (O of the state of an electronics (e)
2-).Afterwards, by oxygen molecule anion (O
2-) with the hydrone (H on surface being attracted to insulative substrate 16
2o) react, and produce OH free radical (OH) isoreactivity kind.Because the periphery of the moisture in absorption causes corona discharge, and make moisture (H
2o) be easy to react with electronics (e), therefore, be easier to produce OH free radical (OH).
The characteristic point of embodiments of the present invention 2 is, the inner surface 21d in the hole portion of insulative substrate 16 and insulative substrate 16 with the opposed locations 16a of sparking electrode, there is adsorption section 18a.Further, the top 17a of sparking electrode 17, be positioned at hole portion foreign side 21c and on the approximate centre axle 21b in hole portion 21.I.e. adsorption section 18a, is arranged on the part opposed with the top 17a of sparking electrode 17.Thus, when applying high voltage between sparking electrode 17 and opposite electrode 19a, the electric current flowed between sparking electrode 17 and opposite electrode 19a after adsorption section 18a flows, arrives opposite electrode 19a from sparking electrode 17.
Adsorption section 18a, is configured in circumferentially centered by sparking electrode 17.Therefore, at the broad range current dissipation of adsorption section 18a, and discharge, so spike stably produces.In addition, due to the broad range current dissipation at adsorption section 18a, therefore, the generation of the spike of OH free radical etc. increases.
And in embodiments of the present invention 2, although be applied with positive voltage to sparking electrode 17, the voltage applied sparking electrode 17 just both can be, also can be negative.Namely, between sparking electrode 17 and the opposite electrode 19a as electrical power source connection 19, apply more than 3KV and be less than the voltage of the plus or minus of 10KV.
And, in embodiments of the present invention 2, although there is adsorption section 18a in the part on the surface of insulative substrate 16, also adsorption section 18a can be had in the side of the whole of the surface of insulative substrate 16 or insulative substrate 16.Thus, the moisture adsorbed at adsorption section 18a can be effectively decomposed.
In addition, the top 17a of sparking electrode 17, owing to being positioned at the foreign side 21c substantial middle in hole portion, therefore, even if when sparking electrode 17 bends, because the top 17a of sparking electrode 17 does not directly contact with adsorption section 18a, therefore safety also can improve.
And, also can be the foreign side 21c substantial middle that the top 17a of sparking electrode 17 is positioned at hole portion, and the top 17a of sparking electrode 17 and adsorption section 18a have the distance of regulation.The distance of this regulation, does not produce pyrophoric distance by being set to, even if thus when sparking electrode 17 bends, also can suppress the generation of spark.
And then, use Figure 19 to illustrate that the top 17a of sparking electrode 17 is positioned at the effect of the foreign side 21c substantial middle in hole portion.Figure 19 is the figure of the position of the sparking electrode of the spike generator that embodiments of the present invention 2 are described.Sparking electrode 17 when sparking electrode 17 being extended to hole portion 21 is set to a with the distance of adsorption section 18, the distance of the top 17a to adsorption section 18a from sparking electrode 17 is set to b, the distance of the top 17a to adsorption section 18a from sparking electrode 17 is set to L.
Displacement in horizontal direction when sparking electrode 17 be there occurs displacement because of error when vibration when using and installation is set to Δ d.When the top 17a of sparking electrode 17 is positioned at hole portion 21 side (below distance b=0mm), if sparking electrode is subjected to displacement with displacement d, then distance L becomes a-Δ d, and the generation of electric discharge can be uneven.Therefore, the danger that the generation that there is spike reduces.And, if displacement d becomes large, then there is the danger that sparking electrode 17 contacts with adsorption section 18a, safety does not preferably produce spark etc. when applying high voltage.
On the other hand, when the top 17a of sparking electrode 17 is positioned at the foreign side 21c in hole portion (being greater than distance b=0mm), distance L can with { (a-Δ d)
2+ b
2}
1/2relational expression represent, compared with the situation of sparking electrode 17 side of being positioned at, the change of distance L can be reduced.Now, because sparking electrode 17 does not contact with adsorption section 18a, therefore, it is possible to be in safer state.
Such as, consider: in the hole portion 21 of distance a=5mm, the situation of sparking electrode 17 displacement d=1mm.When sparking electrode 17 side of being positioned at (distance b=0mm), distance L changes about 1mm.On the other hand, when sparking electrode 17 is positioned at foreign side (distance b=5mm), distance L is only limited to the change of 7.07-6.40=0.67mm.So, because sparking electrode 17 is positioned at the foreign side 21c substantial middle in hole portion, therefore, it is possible to reduce the variable quantity of distance L when sparking electrode 17 is out of shape, spike generation is difficult to change, and reliability improves.
In addition, sparking electrode 17 is formed by single material.Thus, sparking electrode 17 is compared with when carrying out the process of electroplating etc., and durability improves.
In addition, the section shape of the top 17a of sparking electrode 17 is identical toroidals with the section shape in hole portion 21.That is, the surrounding of the top 17a of sparking electrode 17 is even with the distance of the inner surface in hole portion 21.Thus, at the broad range current dissipation of adsorption section 18a, because the discharge portion of sparking electrode 17 also discharges dispersedly from broad range, therefore, can suppress the deterioration of sparking electrode 17, spike stably produces.
In addition, the thickness 18b of the adsorption section of hole portion inner surface is larger than the thickness 18c of the adsorption section of insulative substrate.Thus, many with the adsorption section 18a of the opposed locations 16a of sparking electrode than insulative substrate 16 of the adsorption section 18a of the inner surface 21d in the hole portion water quantities of adsorbing.Therefore, the adsorption section 18a of the inner surface 21d in hole portion, than insulative substrate 16 with the adsorption section 18a of the opposed locations 16a of sparking electrode, electric current is easier to flowing.
And by corona discharge, the electric current flowed between sparking electrode 17 and opposite electrode 19a, is easy to flow to the shortest path from sparking electrode 17 to opposite electrode 19a.But, the distance of the adsorption section 18a of the inner surface 21d in hole portion and the top 17a of sparking electrode, far away with the adsorption section 18a of the opposed locations 16a of sparking electrode than insulative substrate 16.But the inner surface 21d in hole portion, the water quantities that the thickness 18b due to adsorption section adsorbs in a large number is many, is easier to current flowing therefore than insulative substrate 16 with the opposed locations 16a of sparking electrode.That is, can think: the electric current flowed between sparking electrode 17 and opposite electrode 19a by corona discharge, not only be easy to flowing with the adsorption section 18a of the opposed locations 16a of the sparking electrode of insulative substrate 16 to shortest path, the adsorption section 18a being also easy to the inner surface 21d in the hole portion flowing to non-shortest path flows.That is, owing to must be easy to dispersion at the broad range ER effect of adsorption section 18a entirety, therefore, the generation of OH free radical increases.
In addition, as shown in figure 19, the top 17a of sparking electrode 17 and the distance of opposite electrode 19a, than the top 17a of sparking electrode 17 and the distance of adsorption section 18a.Specifically, the electric current flowed between sparking electrode 17 and opposite electrode 19a, such as, after sparking electrode 17 flow to the adsorption section 18a of the inner surface 21d in the hole portion covering insulative substrate 16, flow to the opposed locations 16a with the sparking electrode of insulative substrate 16, then, opposite electrode 19a is arrived.Namely because creepage distance is elongated, therefore can not cause spark discharge, safety improves.
Figure 20 is the schematic diagram of the negative corona discharge of the spike generator representing embodiments of the present invention 2.As shown in figure 20, by carrying out as from the negative corona discharge of electric discharge of sparking electrode 17 being applied in negative electricity, and the moisture (H of adsorption section 18a periphery is made
2o) react with electronics (e), OH free radical (OH) is become and is easy to produce.
And, due between sparking electrode 17 and opposite electrode 19a, via adsorption section 18a on direction, face mobile electron, therefore, creepage distance is elongated, as transmitting as electric current in the Surface runoff of insulative substrate 16.
By to the air provided in room 1 containing OH free radical, thus make antibacterial in air by disactivation.In addition, the malodorous elements in air can be decomposed.
In addition, conductive part 23 is positioned at the roughly equidistant ring-shaped of center 21a apart from hole portion.That is, the top 17a that is positioned at apart from sparking electrode 17 of conductive part 23 is roughly equidistant.Conductive part 23 is set to connect with adsorption section 18a.Therefore, adsorption section 18a, applies voltage via conductive part 23 from power supply unit 20.
Thus, the periphery be positioned at apart from hole portion 21 due to conductive part 23 is roughly equidistant, therefore, when applying high voltage between sparking electrode 17 and opposite electrode 19a, the electric current flowed between sparking electrode 17 and opposite electrode 19a, is easy at conductive part 23 complete cycle Uniform Flow.That is, in the broad range of adsorption section 18a, the dispersion of uniform current ground, and with the mode streaming current spread to conductive part 23.Therefore, there will not be and make current convergence at the close limit of adsorption section 18a and intensively generate spike, the deterioration of meeting restrain adsorption portion 18a.In addition, due to the broad range current dissipation at adsorption section 18a, therefore, the generation of OH free radical increases.
In addition, the surface resistivity of conductive part 23 is less than the surface resistivity of adsorption section 18a.Specifically, preferred: the surface resistivity of adsorption section 18a is 10
6Ω/more than and be less than 10
10Ω/, the surface resistivity of conductive part 23 is 10
6the surface resistivity of Ω/below, opposite electrode 19a is 10
-1Ω/below.
When applying high voltage between sparking electrode 17 and opposite electrode 19a, the electric current flowed between sparking electrode 17 and opposite electrode 19a, flows to adsorption section 18a from sparking electrode 17.Then, this electric current, after flowing to conductive part 23, arrives opposite electrode 19a.At this, flow to the electric current of the periphery of adsorption section 18a, because the surface resistivity of conductive part 23 is less than the surface resistivity of adsorption section 18a, therefore, be easy to arrive opposite electrode 19a via conductive part 23.
That is, at the broad range current dissipation of adsorption section 18a, and electric current flows in the mode spread to conductive part 23.Therefore, can not current convergence be made at the close limit of adsorption section 18a and intensively produce spike, the deterioration of meeting restrain adsorption portion 18a.
In addition, as shown in figure 20, conductive part 23 is covered by insulation-coated portion 31.Specifically, the face that conductive part 23 is opposed with sparking electrode 17, is covered by insulation-coated portion 31.Thus, electric current is suppressed directly to flow to conductive part 23 from sparking electrode 17.Insulation-coated portion 31, is formed by glass or fluororesin etc.In addition, insulation-coated portion 31, also can by the method for the insulating properties such as adhesion of fluorinated resins, chlorinated resin adhesive tape, stuck with paste by coating glass, carry out the method that drying fires after pottery system bonding agent and formed.
And insulation-coated portion 31, is not limited to these, also can be formed by the raw material of insulating properties.And insulation-coated portion 31, also can inwardly just extend, and covers a part of adsorption section 18a.Thus, the contact surface of adsorption section 18a and conductive part 23 also covered by insulation-coated portion 31, therefore, electric current can be suppressed directly to flow to conductive part 23 from sparking electrode 17.
Industry utilizes probability
Spike generation unit of the present invention and adopt its spike generator, can be expected to the application as purification of air.
The explanation of symbol:
1-room,
2-ground,
3-spike generator,
4-air entry,
5-air vent,
6-body shell,
7-air supplying part,
8-spike generation unit,
9-partition board portion,
10-wind path portion,
11-spatial portion,
12-motor,
13-blade part,
14-cover portion,
15-suction inlet,
16-insulative substrate,
The opposed locations of 16a-and sparking electrode,
17-sparking electrode,
17a-top,
The opposition side of 17b-sparking electrode,
The long side direction of 17c-sparking electrode,
Being coated to of 18-semiconduction,
18a-adsorption section,
The thickness of the adsorption section of 18b-hole portion inner surface,
The thickness of the adsorption section of 18c-insulative substrate,
19-electrical power source connection,
19a-opposite electrode,
20-power supply unit,
21-hole portion,
The center in 21a-hole portion,
21b-central shaft,
The foreign side in 21c-hole portion,
The inner surface in 21d-hole portion,
22-support component,
22a-peristome,
23-conductive part,
24-fixed cap,
25-through hole,
26-opens inclined-plane,
27-opens the center on inclined-plane,
28-adsorbent,
29-bonding agent,
30-pore,
The insulation-coated portion of 31-,
32-curved surface,
The coating periphery of 33-semiconduction.
Claims (14)
1. a spike generation unit, has:
Shell portion, it has peristome in one end of tubular or box like;
Sparking electrode, top is inserted in described shell portion from described peristome by it; With
Semiconductive portion, it is vertically arranged opposite with described sparking electrode near described top,
The electrical power source connection of earthing potential is configured as in the periphery in described semiconductive portion,
From power supply unit, voltage is applied to described electrical power source connection and described sparking electrode, by corona discharge, spike is produced,
Described semiconductive portion, is provided with hole portion in the part opposed with described top,
Described semiconductive portion, is made up of insulative substrate and the coating of semiconduction,
Described semiconduction coating, be arranged among the inner surface in described hole portion and described insulative substrate with the opposed locations of described sparking electrode.
2. spike generation unit according to claim 1, is characterized in that,
Bonding agent and conductive agent are contained in described semiconductive portion, and described bonding agent contains any one of glass dust, colloid silica, silicate compound, titanate compound, aluminium oxide, zirconium oxide, titania powder or fluororesin particle.
3. spike generation unit according to claim 1, is characterized in that,
The surface resistivity in described semiconductive portion is 10
6Ω/more than and be less than 10
10Ω/.
4. spike generation unit according to claim 1, is characterized in that,
Conductive part is set with the periphery phase ground connection in described semiconductive portion,
Described semiconductive portion applies voltage via described conductive part from described power supply unit.
5. spike generation unit according to claim 4, is characterized in that,
Described conductive part, the center apart from described hole portion is equidistant.
6. spike generation unit according to claim 4, is characterized in that,
Described conductive part is that metal is dull and stereotyped.
7. spike generation unit according to claim 1, is characterized in that,
Described hole portion is toroidal,
Described sparking electrode is positioned on the central shaft in described hole portion.
8. spike generation unit according to claim 1, is characterized in that,
Described top is positioned at the foreign side in described hole portion.
9. spike generation unit according to claim 7, is characterized in that,
The shape of vertical section on the long side direction of described sparking electrode on described top is circular.
10. spike generation unit according to claim 1, is characterized in that,
Described semiconductive portion, is made up of insulative substrate and adsorption section,
Described adsorption section, be arranged among the inner surface in described hole portion and described insulative substrate with the opposed locations of described sparking electrode.
11. spike generation units according to claim 1, is characterized in that,
Described hole portion have open relative to described sparking electrode open inclined-plane,
Described semiconductive portion, formed more close from the opposition side of described sparking electrode described in open the center on inclined-plane, curved surface that thickness is thicker.
12. spike generation units according to claim 10, is characterized in that,
The thickness of the described adsorption section of the inner surface in described hole portion is larger than the thickness of the described adsorption section of described insulative substrate.
13. spike generation units according to claim 1, is characterized in that,
To between described sparking electrode and described electrical power source connection, apply more than 3kV and be less than the voltage of the plus or minus of 10kV.
14. 1 kinds of spike generators,
The body shell with air entry and air vent is set, and
Air supplying part and spike generation unit according to claim 1 are set in described body shell,
By described air supplying part, the air sucked from described air entry is delivered to described spike generation unit, and from the air of described air vent blowout containing the spike produced at described spike generation unit.
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
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| JP2011-084288 | 2011-04-06 | ||
| JP2011084289 | 2011-04-06 | ||
| JP2011084288 | 2011-04-06 | ||
| JP2011-084289 | 2011-04-06 | ||
| JP2011212103 | 2011-09-28 | ||
| JP2011-212103 | 2011-09-28 | ||
| JP2011-256234 | 2011-11-24 | ||
| JP2011256234A JP6043944B2 (en) | 2011-04-06 | 2011-11-24 | Active species generating unit and active species generating apparatus using the same |
| PCT/JP2012/001594 WO2012137410A1 (en) | 2011-04-06 | 2012-03-08 | Active species emission unit and active species emission device employing same |
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| CN103429276A CN103429276A (en) | 2013-12-04 |
| CN103429276B true CN103429276B (en) | 2016-03-30 |
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| CN201280012579.2A Active CN103429276B (en) | 2011-04-06 | 2012-03-08 | Spike generation unit and use its spike generator |
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| JP (1) | JP6043944B2 (en) |
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| JP5773231B1 (en) * | 2014-12-18 | 2015-09-02 | 株式会社Ｍｉｒａｉ | Ion and ozone wind generator and manufacturing method thereof |
| JP6103028B2 (en) | 2014-12-26 | 2017-03-29 | ダイキン工業株式会社 | Discharge unit |
| JP6581401B2 (en) * | 2015-06-17 | 2019-09-25 | エクレール株式会社 | A device that generates wind of ions and ozone |
| JP6710769B2 (en) * | 2016-09-21 | 2020-06-17 | シャープ株式会社 | Discharge device |
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| JPS6174639A (en) * | 1984-09-18 | 1986-04-16 | Matsushita Electric Ind Co Ltd | Ionic wind generator |
| US4812711A (en) * | 1985-06-06 | 1989-03-14 | Astra-Vent Ab | Corona discharge air transporting arrangement |
| JP5025883B2 (en) * | 2000-02-25 | 2012-09-12 | パナソニックエコシステムズ株式会社 | Dust collector |
| JP3787773B2 (en) * | 2002-05-10 | 2006-06-21 | 財団法人大阪産業振興機構 | Ionizer and system including the ionizer |
| JP2004018348A (en) * | 2002-06-19 | 2004-01-22 | Tamachi Denki Kk | Ozone and negative ion generator |
| JP2005192822A (en) * | 2004-01-08 | 2005-07-21 | Matsushita Electric Ind Co Ltd | Purifying method and purifying apparatus |
| JP2006269095A (en) * | 2005-03-22 | 2006-10-05 | Takeshi Nagasawa | Plasma generation device |
-
2011
- 2011-11-24 JP JP2011256234A patent/JP6043944B2/en active Active
-
2012
- 2012-03-08 CN CN201280012579.2A patent/CN103429276B/en active Active
- 2012-03-08 WO PCT/JP2012/001594 patent/WO2012137410A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| JP6043944B2 (en) | 2016-12-14 |
| JP2013084536A (en) | 2013-05-09 |
| CN103429276A (en) | 2013-12-04 |
| WO2012137410A1 (en) | 2012-10-11 |
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