CN103426788B - Make semiconductor device and the method for regulation substrate temperature in an integrated system - Google Patents
Make semiconductor device and the method for regulation substrate temperature in an integrated system Download PDFInfo
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- CN103426788B CN103426788B CN201210159397.XA CN201210159397A CN103426788B CN 103426788 B CN103426788 B CN 103426788B CN 201210159397 A CN201210159397 A CN 201210159397A CN 103426788 B CN103426788 B CN 103426788B
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Abstract
nullA kind of method making semiconductor device and regulation substrate temperature in an integrated system，Described integrated system is application of vacuum integrated system，In the method making semiconductor device，After substrate being carried out the first process in the first process chamber with the first temperature，Substrate is placed in the second process chamber with the second temperature，Then process in chamber to second and be passed through heat transfer gas so that its pressure reaches preset pressure，And make the second process chamber be maintained at a period of time in preset pressure，Heat at the effect infrabasal plate of heat transfer gas can be pulled away to lower the temperature substrate，Or the heat of substrate is supplemented to heat up substrate，Thus can be by quick for the temperature of substrate on the premise of not using cooling chamber、Steadily、It is adjusted to temperature required accurately，Such that it is able to guarantee repeatability and the stability of semiconductor device second process technique in manufacturing process.
Description
Technical field
The invention belongs to field of semiconductor manufacture, particularly relate to a kind of method regulating substrate temperature；Separately
Outward, the invention still further relates to a kind of method making semiconductor device in application of vacuum integrated system.
Background technology
Semiconductor device manufacture is exactly at substrate (such as silicon chip) upper execution series of complex chemically or physically
Processing, in brief, these process and can be divided into four big basic classes: thin film making, photoetching, etching,
Doping.After substrate is processed by a semiconductor equipment, often need substrate is transported to another
In individual semiconductor equipment, substrate to be carried out next step process, until semiconductor device is formed.For contracting
Halve the Production Time of conductor device, save the physical space shared by equipment for making semiconductor device, some
Semiconductor device can complete in application of vacuum integrated system.Described application of vacuum integrated system is at least
Including two for the process chamber processing substrate, one for transmitting substrate under vacuum conditions
Transmission cavity, before utilizing described process chamber that described substrate is carried out described process, process chamber need to be made
It is maintained at vacuum state, described transmission cavity is provided with multiple mechanical hand for clamping substrate with at vacuum ring
Substrate is transmitted under border.During utilizing described application of vacuum integrated system to make semiconductor device, sometimes
At the first temperature substrate can be processed, then substrate is sent to the process chamber with the second temperature
In room, so that substrate is carried out the second process.Described first temperature, the second temperature unequal, i.e. first
Temperature is more than or less than the second temperature.In this case, for ensure substrate to have preferably to process quality,
And the second process technological parameter of energy more precise control substrate, the temperature of substrate need to be adjusted, i.e.
Substrate is lowered the temperature or hyperthermic treatment, so that substrate is regulated to the second temperature by the first temperature.Substrate
Temperature control method has multiple, but, often there is many weak points in existing temperature control method, as
Temperature regulating time length, special cooling chamber etc. need to be used.
With PECVD(Plasma Enhanced Chemical Vapor Deposition, plasma enhancingization
Learn vapour deposition) as a example by integrated system, it is a kind of application application of vacuum integrated system widely,
Comprising: at least two utilize pecvd process deposit on substrate the process chamber of thin film, one for
Transmit the transmission cavity of substrate under vacuum conditions, two process chamber be respectively the first process chamber, second
Process chamber, after the substrate being positioned at the first process chamber forms thin film, utilize in transmission cavity
Mechanical hand substrate is sent to the second process chamber, to form another layer film on substrate.PECVD
Being the abbreviation of plasma enhanced chemical vapor deposition, it is that the plasma discharge by reacting gas produces
The deposition technique that liveliness proof group generates to promote thin film, it can significantly reduce chemical vapor deposition (CVD)
The temperature of reaction, making some CVD plated film originally needing the most just can carry out react can be
Carry out under lower temperature.The major advantage of PECVD is to be suitable for preparing large-area thin film under cryogenic,
And semiconductive thin film or the dielectric film of high-quality can be prepared, therefore, it is at thin film solar electricity in recent years
The field such as pond, flat faced display obtains a wide range of applications.
As a example by the making of amorphous silicon/microcrystalline silicon tandem thin-film solar cells, can be by substrate (such as glass base
Plate) it is placed in the first process chamber of PECVD integrated system and one layer of photoelectric conversion layer of formation on substrate
Thin film, such as non-crystalline silicon (amorphous silicon, a-Si) thin film, then, utilizes the machine in transmission cavity
Substrate is placed in the second process chamber kept under vacuum conditions by tool hands, and forms another on substrate
Layer opto-electronic conversion layer film, such as microcrystal silicon (microcrystalline silicon, μ-Si) thin film, to be formed
The electric layer of amorphous silicon/microcrystalline silicon tandem solaode.
In area of solar cell, the technological temperature of general amorphous silicon membrane that is first processes the temperature of chamber
Degree is 170 DEG C ~ 300 DEG C, and the temperature that the technological temperature of microcrystalline silicon film that is second processes chamber is
130 DEG C ~ 190 DEG C, and the technological temperature of amorphous silicon membrane is more than the technological temperature of microcrystalline silicon film.Assuming that the
One process the temperature needed for chamber be 200 DEG C, second to process the temperature needed for chamber be 160 DEG C, at substrate
After upper deposition of amorphous silicon films, the temperature that the temperature of substrate processes chamber with first is equal, utilizes transmission
Mechanical hand in chamber will be formed with the substrate of amorphous silicon membrane when being sent in the second process chamber, substrate
Temperature can be more than the temperature of the second process chamber.If the temperature at substrate is not the most reduced to the second process
Start deposition of microcrystalline silicon thin film on substrate during the temperature of chamber, the quality of microcrystalline silicon film can be made the most not
Stable, and, during deposition of microcrystalline silicon thin film, the temperature of substrate can not always remain under these conditions
One stationary value, can affect repeatability and the stability of microcrystalline silicon film depositing operation.
Therefore, on substrate before deposition of microcrystalline silicon thin film, substrate need to be carried out cooling process, with by base
The temperature of plate is reduced to the technological temperature needed for microcrystalline silicon film deposition.General available following several method
Substrate is carried out cooling process:
Method one: substrate is processed chamber from be used for deposition of amorphous silicon films first by the mechanical hand in transmission cavity
After room is taken out, make substrate natural cooling a period of time on a robotic arm, until the temperature of substrate reaches
Technological temperature needed for depositing to microcrystalline silicon film, then, is sent to for deposition micro crystal silicon thin by substrate
In second process chamber of film.
Method two: substrate is processed chamber from be used for deposition of amorphous silicon films first by the mechanical hand in transmission cavity
After room is taken out, substrate is sent to the cooling system in special cooling chamber, in cooling chamber
The cool time of substrate can be controlled, the process warm needed for the temperature of substrate reaches microcrystalline silicon film deposition
When spending, then substrate is sent in the second process chamber of deposition of microcrystalline silicon thin film.
Method three: substrate is processed chamber from be used for deposition of amorphous silicon films first by the mechanical hand in transmission cavity
After room is taken out, substrate is conveyed directly in the second process chamber of deposition of microcrystalline silicon thin film,
Substrate is made to naturally cool to the technological temperature needed for microcrystalline silicon film deposition.
But, all there is shortcomings in above-mentioned several method: in method one, method three, substrate is at vacuum ring
Natural cooling under border, not only cool time is long, has had a strong impact on the production capacity of PECVD integrated system, and
Method one also can take the mechanical hand in transmission cavity for a long time, it is possible to after mechanical hand can be caused not enough
Really, in turn result in transmission cavity and become the bottleneck of thin-film solar cells processing technology；In method two, substrate exists
Special cooling chamber cools down, not only need to set up new chamber in PECVD integrated system, increase and set
Standby cost, and, if mechanical hand is due to occupied and can not be sent away by the substrate that cool down in time,
The temperature of substrate will be caused less than the technological temperature needed for microcrystalline silicon film deposition.
Summary of the invention
It is an object of the invention to provide a kind of side making semiconductor device in application of vacuum integrated system
Method, to be adjusted to institute quickly, steadily, accurately on the premise of not using cooling chamber by the temperature of substrate
Need temperature, such that it is able to guarantee that semiconductor device processes the repeatability of technique in manufacturing process and stablizes
Property.
It is a further object of the present invention to provide a kind of method regulating substrate temperature, not use cooling chamber
On the premise of room, the temperature of substrate is adjusted to quickly, steadily, accurately temperature required.
For achieving the above object, the invention provides a kind of making quasiconductor in application of vacuum integrated system
The method of device, described integrated system include at the first temperature substrate is carried out the first process
One process chamber, at the second temperature substrate being carried out the second process chamber of the second process, described
Method includes:
Substrate is placed in described first process in chamber, described substrate is carried out described first and processes；
Process in chamber by being placed in described second through the described first substrate processed, process to described second
Chamber is passed through heat transfer gas, controls the described second pressure processing chamber and reach preset pressure；
The described second pressure processing chamber is made to be maintained at a period of time in described preset pressure, then to institute
State substrate and carry out described second process.
Alternatively, the one during described heat transfer gas at least includes hydrogen, nitrogen, argon, helium.
Alternatively, described heat transfer gas is at least and substrate carries out the one of described second process desired gas
Part.
Alternatively, described heat transfer gas processes desired gas for substrate carries out described second, described pre-
If pressure carries out described second in chamber with processing described second to process desirable pressure identical substrate.
Alternatively, described integrated system also includes transmission cavity, and described first processes chamber, the second process chamber
Room connects described transmission cavity, and described substrate passes through after first processes and process through described first in chamber
Described transmission cavity is sent to described second and processes chamber.
Alternatively, described application of vacuum integrated system is PECVD integrated system, and described first processes chamber
For deposition of amorphous silicon films at a temperature of described first, described second processes chamber for described second
At a temperature of deposition of microcrystalline silicon thin film.
Alternatively, described substrate is glass substrate.
Alternatively, described heat transfer gas is hydrogen.
Alternatively, described preset pressure is 2mbar ~ 6mbar.
Alternatively, described preset pressure is 4mbar ~ 6mbar.
Alternatively, the flow of described heat transfer gas is 40slm ~ 140slm.
For realizing above-mentioned another object, the invention provides a kind of method regulating substrate temperature, including:
The substrate with the first temperature is placed in the process chamber with the second temperature, to described process chamber
Being passed through heat transfer gas in room, the pressure controlling described process chamber reaches preset pressure；
The pressure making described process chamber is maintained at a period of time in described preset pressure.
Alternatively, the one during described heat transfer gas at least includes hydrogen, nitrogen, argon, helium.
Alternatively, described substrate is glass substrate.
Alternatively, described process chamber is application of vacuum chamber.
Alternatively, described process chamber is PECVD chamber.
Compared with prior art, the invention have the advantages that
In the method making semiconductor device in application of vacuum integrated system provided by the present invention, at tool
Have after the first process chamber of the first temperature carries out the first process to substrate, substrate is placed in and has the
In second process chamber of two temperature, then process to second and chamber is passed through heat transfer gas so that it is pressed
Power reaches preset pressure, and makes the second process chamber be maintained at a period of time in preset pressure, at conduction of heat
The heat of the effect infrabasal plate of gas can be pulled away substrate carries out fast cooling, or the heat of substrate
Supplemented substrate is rapidly heated, further, since the second process chamber remains at default
In pressure, be possible not only to make substrate temperature plateau regulate to temperature required, and can be by controlling
The size of preset pressure is to adjust the temperature of substrate accurately to temperature required, it is ensured that semiconductor device
In manufacturing process, second processes the repeatability of technique and stability, i.e. substrate in accurate temperature conditions
Under carry out the second process；
And, can process to become originally to control base with the second gap processing required time and homoiothermic according to first
The homoiothermic time of plate, the first process chamber or second can be reduced to greatest extent and process the idle waiting of chamber
Time, make application of vacuum integrated system be in quantity-produced state, thus farthest improve vacuum
Process the production capacity of integrated system；
It addition, when heat transfer gas be at least substrate carried out the second process desired gas a part of time,
The cost of manufacture of semiconductor device can be reduced, needed for heat transfer gas is for carrying out the second process to substrate
Gas, and when preset pressure is identical with substrate carries out in the second process chamber the second process desirable pressure,
The pressure regulation step of the second process can be saved, reduce the fabrication cycle of semiconductor device.
Furthermore, the present invention does not uses special cooling chamber in application of vacuum integrated system, reduces
The cost of application of vacuum integrated system, decreases taking of mechanical hand in transmission cavity, it is ensured that transmission cavity is not
The bottleneck of semiconductor device fabrication process can be become.
The method of regulation substrate temperature provided by the present invention can be applied in multiple occasion not use
On the premise of cooling chamber, the temperature of substrate is adjusted to quickly, steadily, accurately temperature required, has wide
The general suitability.
Accompanying drawing explanation
Fig. 1 is the flow chart that the present invention makes semiconductor device in application of vacuum integrated system；
Fig. 2 is the enforcement that the present invention makes the method for semiconductor device in application of vacuum integrated system
Second process chamber structure schematic diagram of a kind of application of vacuum integrated system in example；
Fig. 3 is the enforcement that the present invention makes the method for semiconductor device in application of vacuum integrated system
The structural representation of a kind of application of vacuum integrated system in example, described application of vacuum integrated system is PECVD
Integrated system.
Detailed description of the invention
Fig. 1 is the flow chart that the present invention makes semiconductor device in application of vacuum integrated system, such as Fig. 1
Shown in, the manufacture method of described semiconductor device includes:
S1: substrate is placed in the first process chamber；
S2: substrate is carried out the first process；
S3: will be placed in the second process chamber through the first substrate processed；
S4: processing to second and be passed through heat transfer gas in chamber, the pressure controlling the second process chamber reaches
Preset pressure；
S5: make the pressure of the second process chamber be maintained at a period of time in preset pressure；
S6: substrate is carried out the second process.
Below in conjunction with the accompanying drawings, by specific embodiment, technical scheme is carried out clear, complete
Description, it is clear that described embodiment is only a part for the embodiment of the present invention, and not
It is that they are whole.According to these embodiments, those of ordinary skill in the art is before without creative work
Put obtainable other embodiments all, broadly fall into protection scope of the present invention.
In the method making semiconductor device in application of vacuum integrated system provided by the present invention, described
Application of vacuum integrated system includes the first process chamber for substrate carries out the first process at the first temperature
Room, at the second temperature substrate being carried out the second process chamber of the second process, described making is partly led
The method of body device includes: be placed in by substrate in the first process chamber, substrate is carried out the first process；Will
It is placed in the second process chamber through the first substrate processed, processes in chamber to second and be passed through thermally conductive gas
Body, the pressure controlling the second process chamber reaches preset pressure；The pressure making the second process chamber is maintained at
A period of time in preset pressure, so that substrate is regulated to the second temperature by the first temperature, then substrate is entered
Row second processes.
Before substrate carries out described first process, the first process chamber need to be made to be maintained at vacuum state, and
Make the first process chamber be maintained at the first temperature, then under conditions of other technological parameter, substrate is carried out
First processes.After first processes, the temperature of substrate also reaches the first temperature.Then, substrate is placed in
Second processes in chamber.Before substrate is carried out the second process, second processes chamber is held in vacuum
State, and second process chamber be maintained at the second temperature.Described second temperature is unequal with the first temperature,
For ensureing that substrate has the preferably second process quality, the temperature of substrate need to be adjusted to second by the first temperature
Temperature.
Fig. 2 is the enforcement that the present invention makes the method for semiconductor device in application of vacuum integrated system
Second process chamber structure schematic diagram of a kind of application of vacuum integrated system in example, as in figure 2 it is shown, second
Process chamber 200 to include: air inlet 11；Gas outlet 12；For supporting substrate 10 and doubling as bottom electrode
Pedestal 13；With pedestal 13 in the upper electrode 14 being oppositely arranged.
Air inlet 11 is connected with air intake installation 15, in order to can process in chamber 200 to second and be passed through gas.
Flow control component (MFC) 16 can be set between air inlet 11 and air intake installation 15, to control gas
Flow.Pneumatic operated valve 17 also can be set between flow control component 16 and air inlet 11, when opening gas
During dynamic valve 17, gas can be passed through to air inlet 11, when closing pneumatic operated valve 17, can stop to air inlet
11 are passed through gas.
Gas outlet 12 is connected with vacuum pump 18, to regulate the pressure of the second process chamber 200.Alternatively,
The family of power and influence 19 can be set between gas outlet 12 and vacuum pump 18, so, when closing pneumatic operated valve 17, the family of power and influence
When 19, air inlet 11, gas outlet 12 can be simultaneously closed off, make the pressure of the second process chamber 200 obtain
To keep.Alternatively, butterfly valve 20 also can be set between the family of power and influence 19 and vacuum pump 18, so, when
When utilizing vacuum pump 18 to extract the gas in the second process chamber 200, by controlling opening of butterfly valve 20
Open angle and can regulate the pressure of the second process chamber 200.
Upper electrode 14 also can be provided with some pores (not shown), so that being passed through the second process chamber 200
Gas be evenly distributed on above substrate 10.
Second processes chamber 200 also includes heater (not shown), in order to can process chamber 200 by second
Temperature adjust to the second required temperature.It is internal that described heater may be provided at pedestal 13, certainly, and institute
State heater and may also be arranged on other position of the second process chamber 200.
When just having been put into by substrate 10 in second process chamber 200, the second temperature processing chamber 200 is the
Two temperature, for making the temperature of substrate 10 reach the second temperature, are provided heat transfer gas by air intake installation 15
21, described heat transfer gas 21 refers to a kind of the heat of object high for temperature to be passed to the object that temperature is low
Gas.Heat transfer gas 21 is led in the second process chamber 200 via air inlet 11, and by setting
The pore put in upper electrode 14 is evenly distributed on above substrate 10.When the second pressure processing chamber 200
When power reaches preset pressure, the pressure controlling the second process chamber 200 is maintained in described preset pressure one
The section time: when the first temperature more than the second temperature i.e. temperature of substrate 10 higher than the second process chamber 200
During temperature, under the effect of heat transfer gas 21, the heat of substrate 10 can be pulled away to substrate 10
Carry out fast cooling；When the first temperature less than the second temperature i.e. temperature of substrate 10 less than the second process chamber
200 temperature time, under the effect of heat transfer gas 21, the heat of substrate 10 can be supplemented so that right
Substrate 10 is rapidly heated.
Owing to the second process chamber 200 remains in preset pressure, it is possible not only to make the temperature of substrate 10
Degree smoothly regulation to the most temperature required i.e. the second temperature, and can by control the size of preset pressure with
The temperature of substrate 10 is adjusted accurately to temperature required, it is ensured that semiconductor device is in manufacturing process
Two repeatabilities processing technique and stability, i.e. substrate 10 are carried out at second under accurate temperature conditions
Reason.
When the temperature of substrate 10 reaches the second temperature, immediately substrate 10 can be carried out the second process,
Substrate 10 can also be incubated, after insulation a period of time, again substrate 10 be carried out the second process.
Concrete, the temperature retention time of the second process chamber can be adjusted according to practical situation.
Substrate is adjusted by the first temperature and may utilize multiple method to the time needed for the second temperature and control.Side
Method one: can be by selecting the heat transfer gas of different specific heat capacity to convert the homoiothermic time of substrate.For subtracting
The homoiothermic time of few substrate, the heat transfer gas that optional specific heat capacity is relatively large, for increasing the tune of substrate
The temperature time, the heat transfer gas that optional specific heat capacity is relatively small.In the present embodiment, described conduction of heat
Gas is including, but not limited to hydrogen, nitrogen, argon, helium, and described heat transfer gas at least includes
One in hydrogen, nitrogen, argon, helium.Compared with nitrogen, argon, helium, the specific heat of hydrogen
Holding maximum, its thermal conduction effect is optimal, therefore preferably, described heat transfer gas is hydrogen.It addition,
While selecting heat transfer gas according to the homoiothermic time, the gas needed for also can processing according to second selects
Selecting heat transfer gas, the heat transfer gas i.e. selected is at least and substrate carries out the second process desired gas
A part, with being adjusted by substrate to time temperature required, can close giving vent to anger of the second process chamber immediately
Mouthful, to continue with this heat transfer gas to carry out the second process, thus reduce whole semiconductor device
Cost of manufacture.Such as, can use when deposition of amorphous silicon films or microcrystalline silicon film on substrate hydrogen,
Silicon-containing gas, and hydrogen is also a kind of preferably heat transfer gas just, in this case, so that it may choosing
Select hydrogen as heat transfer gas, substrate is adjusted to the second temperature, continue to process in chamber to second
It is passed through silicon-containing gas (also needing if there is a need to be passed through hydrogen partial), to form amorphous silicon membrane or microcrystal silicon
Thin film.
Method two: can be by selecting different preset pressure to convert the homoiothermic time of substrate.For reducing
The homoiothermic time of substrate, optional relatively large preset pressure；For increasing the homoiothermic time of substrate, can
Select relatively small preset pressure.It addition, needed for heat transfer gas is for carrying out the second process to substrate
All gas time, when selecting preset pressure according to the homoiothermic time, also can process required according to second
Pressure select preset pressure, also can save the second process while the homoiothermic time controlling simultaneously
Pressure regulation step, reduces the fabrication cycle of semiconductor device.Such as, when substrate is carried out the second process,
When second desirable pressure processing chamber is 2.5mbar, can process in chamber to second and be passed through the second process institute
The gas needed, and make the pressure of the second process chamber be maintained at 2.5mbar a period of time, when the temperature of substrate
After reaching the second temperature, then other process conditions (as applied radio-frequency voltage) needed for the second process are set,
So that substrate is carried out the second process.
From the point of view of in theory, substrate is adjusted to the time needed for the second temperature the shortest more good by the first temperature.But
It is, if homoiothermic speed is too fast, more heat transfer gas to be used, cause homoiothermic relatively costly；Separately
Outward, first processes the time needed for processing with second there may exist difference, if homoiothermic speed is too fast or
If too slow, it is possible to the idle waiting time that can cause the first process chamber or the second process chamber is longer,
So that affecting the production capacity of application of vacuum integrated system.Therefore, consider above-mentioned factor, need to be according to first
Process and become the original control substrate homoiothermic time with the second gap processing required time and homoiothermic, with maximum limit
The minimizing first of degree processes chamber or second and processes the idle waiting time of chamber, makes the integrated system of application of vacuum
System is in quantity-produced state, thus farthest improves the production capacity of application of vacuum integrated system.Need
Illustrating, those skilled in the art are it is to be understood that during the homoiothermic of substrate, it should control second
Process chamber will not be arranged under other technological parameter condition (being such as applied with radio-frequency voltage), to avoid heat
Conduction gas reacts with substrate.
Continue shown in ginseng Fig. 2, when the second pressure processing chamber 200 reaches preset pressure, control the
Two pressure processing chamber 200 are maintained at the method for described preset pressure and at least include two kinds: method one,
While being passed through heat transfer gas 21 to the second process chamber 200, utilize vacuum system 18 from giving vent to anger
Gas in mouth 12 extraction the second process chambers 200, and ensure the pressure of the second process chamber 200 all the time
It is maintained at preset pressure；Method two, process in chamber 200 to second and be passed through heat transfer gas 21 before,
The gas outlet 12 of the second process chamber 200 can be closed, so, when the second pressure processing chamber 200 reaches
After preset pressure, can stop continuing to process in chamber 200 to second to be passed through heat transfer gas, make the
Two pressure processing chamber 200 are maintained.Compared with method one, method two can use relatively small number of
Heat transfer gas, reduces homoiothermic cost.
Described application of vacuum integrated system also includes the transmission cavity for transmitting substrate under vacuum conditions, institute
State the first process chamber, the second process chamber connects described transmission cavity, the machine in so available transmission cavity
Tool hands by substrate from enter sheet chamber be sent to have the first temperature first process chamber, so that substrate is carried out
First processes.After first processes, utilize the mechanical hand in transmission cavity that substrate is sent to the second process chamber
In room, to regulate the temperature of substrate.
Described first process, the second process can be the semiconductor fabrication process such as dry etching, deposition, institute
State deposition and include chemical gaseous phase deposition (chemical vapor deposition is called for short CVD).
Heretofore described substrate can be conventional Semiconductor substrate, such as silicon substrate, silicon-Germanium substrate, absolutely
On edge body, silicon (silicon on insulator is called for short SOI) substrate etc., permissible in described Semiconductor substrate
Have been formed with semiconductor device, such as transistor, electric capacity, resistance, commutator etc.；Described substrate is all right
It is solar cell substrate, such as glass substrate, plastics, metal, rustless steel etc., described solaode
The part-structure of solaode can be had been formed with, such as the transparent conductive oxide as electrode on substrate
(transparent conductive oxide is called for short TCO) layer, photoelectric conversion layer (photoelectric layer)
Deng；Described substrate can also is that liquid crystal display substrate, such as glass substrate etc., described liquid crystal display
The part-structure of liquid crystal display can be had been formed with, such as transparent conductive oxide on equipment substrate
(transparent conductive oxide, be called for short TCO) layer, thin film transistor (TFT) (thin film transistor,
Be called for short TFT), diode (diode) etc..Certainly, described substrate is not limited to the present embodiment, and it is also
Can be other substrate being suitable to it is implemented semiconductor technology, differ a citing at this.
Described the first of heretofore described application of vacuum integrated system processes chamber, second processes chamber
Quantity can be one or more, in order to can enter multiple substrates in application of vacuum integrated system simultaneously
Row processes, to improve the production capacity of application of vacuum integrated system.It addition, first processes chamber, the second process
The quantity of chamber can equal can also be unequal, need to according to first process, second process needed for time
Adjust the first process chamber and second and process the quantity ratio of chamber, farthest to optimize the first process
Chamber and second processes the processing compound of chamber: when the first time processed was less than the time that second processes,
The quantity quantity more than the first process chamber of the second process chamber can be made；It is more than when the first time processed
During the time that second processes, the quantity quantity more than the second process chamber of the first process chamber can be made.
Heretofore described application of vacuum integrated system may also include other chamber, as the 3rd process chamber,
Fourth process chamber ... enter sheet chamber, slice chamber.Described 3rd processes chamber, fourth process chamber ...
It is respectively used to substrate carries out the 3rd process, fourth process ... enter sheet chamber described in, and be transported to for placing
The substrate of application of vacuum integrated system, described slice chamber is used for being placed through application of vacuum integrated system and processes
Substrate, described transmission cavity also with described 3rd process chamber, fourth process chamber ... enter sheet chamber, go out
Sheet chambeies etc. connect, in order to substrate can be sent to the precalculated position of application of vacuum integrated system.Carry out described
After second processes, substrate is sent in application of vacuum integrated system by the mechanical hand in available transmission cavity
Other chamber in, substrate to be carried out other process, the most again substrate is sent in slice chamber；
After second processes, it is possible to directly substrate is sent in slice chamber.The described semiconductor device formed can
To be a part for integrated circuit, it is also possible to be liquid crystal display or solaode.
In view of the major advantage of PECVD is to be suitable for preparing large-area thin film under cryogenic and permissible
Prepare semiconductive thin film or the dielectric film of high-quality, and it obtains in field of thin film solar cells in recent years
It is widely applied, therefore making the PECVD integrated system of thin-film solar cells is in the present embodiment
Example, makees concrete introduction to the method making semiconductor device in application of vacuum integrated system.Fig. 3 is this
A kind of vacuum in one embodiment of the method that invention makes semiconductor device in application of vacuum integrated system
Processing the structural representation of integrated system, described application of vacuum integrated system is PECVD integrated system, as
Shown in Fig. 3, described PECVD integrated system 1 includes that the first process chamber 100, second processes chamber 200,
First processes chamber 100 uses for deposition of amorphous silicon films at the first temperature, the second process chamber 200
In deposition of microcrystalline silicon thin film at the second temperature.PECVD integrated system 1 also includes into sheet chamber 300, goes out
Sheet chamber 400, for transmitting the transmission cavity 500 of substrate under vacuum conditions, enter sheet chamber 300 for placing fortune
Delivering to the substrate of PECVD integrated system 1, slice chamber 400 is used for being placed through PECVD integrated system
1 substrate processed, is provided with multiple mechanical hand for clamping substrate in transmission cavity 500, transmission cavity 500 with
First processes chamber 100, second processes chamber 200, enters sheet chamber 300, slice chamber 400 and connect, in order to
Substrate can be sent in the first process chamber 100 by entering sheet chamber 300, with deposited amorphous silicon on substrate
Thin film, then be sent in the second process chamber 200 by the first process chamber 100, to deposit on substrate
Microcrystalline silicon film, then be sent in slice chamber 400 by the second process chamber 200.
Generally, the sedimentation time of amorphous silicon membrane is 25min ~ 35min, and microcrystalline silicon film is heavy
The long-pending time is that the sedimentation time of 50min ~ 70min, i.e. microcrystalline silicon film is generally amorphous silicon membrane sedimentation time
Twice.For making the metacoxal plate forming amorphous silicon membrane on substrate can be conveyed directly to the second process chamber
To be subsequently formed microcrystalline silicon film in 200, thus increase the production capacity of PECVD integrated system 1, PECVD
In integrated system 1, first processes chamber 100 and second and processes the quantity of chamber 200 ratio for 1:2.
Described substrate is solar cell substrate, such as glass substrate, plastics, metal, rustless steel etc.,
The part-structure of solaode can be had been formed with, as electrode on described solar cell substrate
Transparent conductive oxide (transparent conductive oxide is called for short TCO) layer, photoelectric conversion layer
(photoelectric layer) etc..
Utilize the mechanical hand in transmission cavity 500 that from entering sheet chamber 300, substrate is sent to have the first temperature
First processes in chamber 100, and described first temperature is 170 DEG C ~ 300 DEG C, and first processes the knot of chamber 100
Structure refers to Fig. 2.Then, silicon-containing gas can be passed through (such as SiH in the first process chamber 1004) and
H2, and process the upper electrode of chamber 100, bottom electrode applying high frequency electric source to first, with shape on substrate
Become amorphous silicon membrane.After having deposited amorphous silicon membrane, the temperature of substrate is also the first temperature.
Then, utilize the mechanical hand in transmission cavity 500 to be processed chamber 100 from first by substrate to be sent to
Having in the second process chamber 200 of the second temperature, described second temperature is 130 DEG C ~ 190 DEG C, and generally
Substrate, higher than the temperature of microcrystalline silicon film deposition, therefore, need to be dropped by the temperature of amorphous silicon membrane deposition
Temperature processes.
As in figure 2 it is shown, air intake installation 15 provides heat transfer gas 21, described heat transfer gas 21 via
Air inlet 11 leads in the second process chamber 200.In the present embodiment, heat transfer gas 21 include but
Be not limited to hydrogen, nitrogen, argon, helium, and heat transfer gas 21 at least include hydrogen, nitrogen,
One in argon, helium.Compared with nitrogen, argon, helium, the specific heat capacity of hydrogen is maximum, its heat
Conducting effect is optimal, therefore preferably, described heat transfer gas is hydrogen；And, deposition of microcrystalline silicon thin film
Required gas also includes hydrogen, so, the temperature of substrate is adjusted as heat transfer gas when selecting hydrogen
During whole temperature needed for deposition of microcrystalline silicon thin film, the gas outlet of the second process chamber can be closed immediately,
To continue with the hydrogen in the second process chamber, thin to form microcrystal silicon on the amorphous silicon membrane of substrate
Film, saves the cost of manufacture of semiconductor device.Certainly, it is possible to select nitrogen, argon, helium conduct
Heat transfer gas, but the temperature fall time needed for substrate can lengthen.
When the second pressure processing chamber 200 reaches preset pressure, control the second process chamber 200
Pressure is maintained at a period of time in described preset pressure.Concrete, can adjust at second according to practical situation
The temperature retention time of reason chamber.Inventor test proves that, when heat transfer gas is hydrogen, and makes second
When the preset pressure of process chamber is 2mbar ~ 6mbar, the second process chamber is made to keep the most about
The temperature of substrate can be adjusted accurately to the second temperature after 200 seconds.Preferably, heat transfer gas is worked as
During for hydrogen, the preset pressure that can make the second process chamber is 4mbar ~ 6mbar, the flow of heat transfer gas
For 40slm ~ 140slm.In one embodiment of the invention, the second preset pressure processing chamber is
5mbar.Owing to the temperature fall time of substrate is shorter, do not interfere with the production capacity of application of vacuum integrated system, even
The idle waiting time of the second process chamber can also be reduced, it is ensured that second processes chamber is constantly in continuously
Production status.
Continue shown in ginseng Fig. 2, when the second pressure processing chamber 200 reaches preset pressure, control the
Two pressure processing chamber 200 are maintained at the method for described preset pressure and at least include two kinds: method one,
While being passed through heat transfer gas 21 to the second process chamber 200, utilize vacuum system 18 from giving vent to anger
Gas in mouth 12 extraction the second process chambers 200, and ensure the pressure of the second process chamber 200 all the time
It is maintained at preset pressure；Method two, process in chamber 200 to second and be passed through heat transfer gas 21 before,
The gas outlet 12 of the second process chamber 200 can be closed, so, when the second pressure processing chamber 200 reaches
After preset pressure, can stop continuing to process in chamber 200 to second to be passed through heat transfer gas, make the
Two pressure processing chamber 200 are maintained.Compared with method one, method two can use relatively small number of
Heat transfer gas, reduces homoiothermic cost.
After the temperature of substrate reaches the second temperature, process in chamber to second and be passed through silicon-containing gas (such as SiH4)
And H2, and process the upper electrode of chamber, bottom electrode applying high frequency electric source to second, to be formed on substrate
Microcrystalline silicon film.After substrate forms microcrystalline silicon film, can directly substrate be sent in slice chamber,
After other is processed, amorphous silicon/microcrystalline silicon tandem solaode can be formed.
Present invention also offers a kind of method regulating substrate temperature, described method includes: will have first
The substrate of temperature is placed in the process chamber with the second temperature, is passed through heat transfer gas to processing in chamber,
Control processes the pressure of chamber and reaches preset pressure；The pressure making process chamber is maintained in preset pressure one
The section time.After a period of time, under the effect of heat transfer gas, the heat of substrate can be pulled away with right
Substrate carries out fast cooling, or, the heat of substrate can be supplemented to be rapidly heated substrate,
Thus substrate is quickly adjusted to temperature required.Remain in preset pressure, no owing to processing chamber
Only can make substrate temperature plateau regulate to temperature required, and can be by controlling preset pressure
Size is to adjust the temperature of substrate accurately to temperature required.Described heat transfer gas at least include hydrogen,
One in nitrogen, argon, helium.Applying as one of which, described substrate is glass substrate, institute
Stating process chamber is application of vacuum chamber, concrete, for PECVD chamber.Utilize described regulation substrate temperature
Glass substrate can be heated up or lower the temperature by the method for degree.
The method of regulation substrate temperature provided by the present invention can be applied in multiple occasion with by substrate
Temperature is adjusted to temperature required quickly, steadily, accurately, has wide applicability.
In sum, compared with prior art, the invention have the advantages that
In the method making semiconductor device in application of vacuum integrated system provided by the present invention, at tool
Have after the first process chamber of the first temperature carries out the first process to substrate, substrate is placed in and has the
In second process chamber of two temperature, then process to second and chamber is passed through heat transfer gas so that it is pressed
Power reaches preset pressure, and makes the second process chamber be maintained at a period of time in preset pressure, at conduction of heat
The heat of the effect infrabasal plate of gas can be pulled away substrate carries out fast cooling, or the heat of substrate
Supplemented substrate is rapidly heated, further, since the second process chamber remains at default
In pressure, be possible not only to make substrate temperature plateau regulate to temperature required, and can be by controlling
The size of preset pressure is to adjust the temperature of substrate accurately to temperature required, it is ensured that semiconductor device
In manufacturing process, second processes the repeatability of technique and stability, i.e. substrate in accurate temperature conditions
Under carry out the second process；
And, can process to become originally to control base with the second gap processing required time and homoiothermic according to first
The homoiothermic time of plate, the first process chamber or second can be reduced to greatest extent and process the idle waiting of chamber
Time, make application of vacuum integrated system be in quantity-produced state, thus farthest improve vacuum
Process the production capacity of integrated system；
It addition, when heat transfer gas be at least substrate carried out the second process desired gas a part of time,
The cost of manufacture of semiconductor device can be reduced, needed for heat transfer gas is for carrying out the second process to substrate
Gas, and when preset pressure is identical with substrate carries out in the second process chamber the second process desirable pressure,
The pressure regulation step of the second process can be saved, reduce the fabrication cycle of semiconductor device.
Furthermore, the present invention does not uses special cooling chamber in application of vacuum integrated system, reduces
The cost of application of vacuum integrated system, decreases taking of mechanical hand in transmission cavity, it is ensured that transmission cavity is not
The bottleneck of semiconductor device fabrication process can be become.
The method of regulation substrate temperature provided by the present invention can be applied in multiple occasion not use
On the premise of cooling chamber, the temperature of substrate is adjusted to quickly, steadily, accurately temperature required, has wide
The general suitability.
Above by the explanation of embodiment, professional and technical personnel in the field should be able to be made to be more fully understood that the present invention,
And can reproduce and use the present invention.Those skilled in the art can according to principle specifically described herein
To above-described embodiment as various changes and modifications to be without departing from the spirit and scope of the present invention
Obviously.Therefore, the present invention should not be construed as being limited to above-described embodiment shown in this article, its
Protection domain should be defined by appending claims.
Claims (13)
1. the method making semiconductor device in application of vacuum integrated system, it is characterised in that described
Integrated system include at the first temperature substrate is carried out the first process first process chamber, for
Substrate carries out the second process chamber of the second process at the second temperature, and described method includes:
Substrate is placed in described first process in chamber, described substrate is carried out described first and processes；
Process in chamber by being placed in described second through the described first substrate processed, process to described second
Chamber is passed through heat transfer gas, controls the described second pressure processing chamber and reach preset pressure；
The described second pressure processing chamber is made to be maintained at a period of time in described preset pressure, to regulate base
The temperature of plate, to the second temperature, then carries out described second and processes described substrate；
Transmission cavity, described first processes chamber, the second process chamber described transmission cavity of connection, described substrate
It is sent at described second by described transmission cavity after first processes and process through described first in chamber
Reason chamber；
Wherein, the one during described heat transfer gas at least includes hydrogen, helium.
Method the most according to claim 1, it is characterised in that described heat transfer gas is at least substrate
Carry out described second part processing desired gas.
Method the most according to claim 2, it is characterised in that described heat transfer gas is for enter substrate
Row described second processes desired gas, and described preset pressure processes in chamber to enter substrate with described second
It is identical that row described second processes desirable pressure.
Method the most according to claim 1, it is characterised in that described application of vacuum integrated system is
PECVD integrated system, described first processes chamber is used for deposition of amorphous silicon films at a temperature of described first,
Described second processes chamber for deposition of microcrystalline silicon thin film at a temperature of described second.
Method the most according to claim 4, it is characterised in that described substrate is glass substrate.
6. according to the method described in claim 4 or 5, it is characterised in that described heat transfer gas is hydrogen.
Method the most according to claim 6, it is characterised in that described preset pressure is
2mbar～6mbar.
Method the most according to claim 6, it is characterised in that described preset pressure is
4mbar～6mbar.
Method the most according to claim 6, it is characterised in that the flow of described heat transfer gas is
40slm～140slm.
10. the method regulating substrate temperature, it is characterised in that including:
The substrate with the first temperature is placed in the process chamber with the second temperature, to described process chamber
Being passed through heat transfer gas in room, the pressure controlling described process chamber reaches preset pressure；
The pressure making described process chamber is maintained at a period of time in described preset pressure, to regulate substrate
Temperature is to the second temperature；
Wherein, the one during described heat transfer gas at least includes hydrogen, helium.
11. methods according to claim 10, it is characterised in that described substrate is glass substrate.
12. methods according to claim 10, it is characterised in that described process chamber is application of vacuum
Chamber.
13. methods according to claim 12, it is characterised in that described process chamber is PECVD
Chamber.
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Effective date of registration: 20180411 Address after: 225400, 9 / F, building 16, Zhi Guang science and Technology Plaza, north of Huan Xi Road, Taixing high tech Industrial Development Zone, Jiangsu. Patentee after: Ideal Wan Li Hui vacuum equipment (Taixing) Co., Ltd. Address before: 201620 Shanghai city Songjiang District Sixian Road No. 3255, building 3, Room 403 Patentee before: SHANGHAI LIXIANG WANLIHUI FILM EQUIPMENT CO., LTD. |