CN101066842A - Process and apparatus for preparing amorphous hydrosilicon film - Google Patents
Process and apparatus for preparing amorphous hydrosilicon film Download PDFInfo
- Publication number
- CN101066842A CN101066842A CN 200710069121 CN200710069121A CN101066842A CN 101066842 A CN101066842 A CN 101066842A CN 200710069121 CN200710069121 CN 200710069121 CN 200710069121 A CN200710069121 A CN 200710069121A CN 101066842 A CN101066842 A CN 101066842A
- Authority
- CN
- China
- Prior art keywords
- film
- hydrosilicon
- reaction chamber
- amorphous
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The present invention discloses process and apparatus for preparing amorphous hydrosilicon film. The process includes the steps of: setting cleaned substrate between two parallel electrodes inside a reaction chamber, vacuumizing the reaction chamber and filling pure nitrogen as carrier, introducing hydrogen diluted silane as the reacting gas, maintaining the substrate in room temperature or heating to 50-100 deg.c, and turning on the high voltage pulse power source for gaseous discharge to deposit film. The present invention realizes the fast deposition of amorphous hydrosilicon film on different kinds of substrate at room temperature or low temperature up to 50-100 deg.c in the maximum depositing rate up to 20 nm/min, 2 times higher than that of PECVD amorphous silicon film deposition. The prepared amorphous hydrosilicon film has energy gap of 1.92-2.18 eV, and may find its application in solar cell, energy saving building glass and other fields.
Description
Technical field
The present invention relates to method and apparatus at multiple substrate surface deposited amorphous hydrosilicon film.
Background technology
Amorphous hydrogen silicon (a-Si:H) is that a kind of energy is realized controllable doped semiconductor film material, is used widely already in fields such as solar cell, Schottky barrier semiconductor device, photodetection, plane demonstration, energy-saving glass.Present a-Si:H method for manufacturing thin film follows United States Patent (USP) in 1986 mostly: 4631198 (Kakinuma, et al.), adopt rf (discharge) plasma chemical vapour deposition (PECVD) technology, with hydrogen and silane as reaction precursor, deposit film on heated substrates.Also there is employing aumospheric pressure cvd (APCVD) technology to prepare the amorphous silicon membrane triode transistor, is applied to LCD, see United States Patent (USP) in 1999: 5,930,657 (Kim, et al.).Up to now, the PECVD technology remain a-Si:H thin film study and large-scale industrial application the preparation method that generally adopts.
It is the radio-frequency power supply generate energy excitation formation plasma body of 13.56MHz that conventional PECVD technology adopts fixed frequency, promotes the carrying out of chemical vapour deposition reaction.Yet the desired operating air pressure of this radio frequency discharge pattern lower (about about 100Pa) makes the gas flow of reaction precursor be restricted, and a-Si:H depositing of thin film speed is on the low side (about 5～10nm/min).In addition, the electronics average energy that radio frequency discharge provided lower (＜1eV), substrate temperature when making deposition a-Si:H film needs more than 200 ℃ at least, this has limited selecting for use of multiple low melting point baseplate material on the one hand, make impurity such as carbon on the substrate, heavy metal might in heat-processed, be diffused in the established film on the other hand, performance of semiconductor device is produced infringement.
Therefore, explore make the a-Si:H film can be under the low temperature of normal temperature or 50～100 ℃ fast deposition, have higher using value.
Summary of the invention
The purpose of this invention is to provide a kind of method and device that under the low temperature of room temperature or 50～100 ℃, prepares amorphous hydrosilicon film at multiple substrate surface fast.
The method for preparing amorphous hydrosilicon film provided by the invention adopts the high voltage pulse discharge plasma chemical Vapor deposition process, and step is as follows:
Substrate behind clear Xian is placed reaction chamber, and reaction chamber is evacuated down at least 10
-3Pa, with the pure nitrogen gas is carrier gas, the volumetric concentration that feeds diluted in hydrogen is 20～50% silane reaction gas, and reaction chamber pressure is 100～1000Pa, and substrate is in room temperature or be heated to 50～100 ℃, open high-voltage pulse power source, adjust voltage 5～20KV, frequency 5～20kHz, rising edge of a pulse 20kV/ μ S, pulse width 2 μ S, the geseous discharge deposit film.
Above-mentioned substrate can be traditional base materials such as glass, silicon chip, also can be low melting point base materials such as plastics, aluminium.
Conditions such as the parameter of the present invention by adjusting high-voltage pulse power source, temperature of reaction can be adjusted the sedimentation rate and the film base bonding state of amorphous hydrosilicon film.
Realize the device that preparation amorphous hydrosilicon film method of the present invention is adopted, the reaction that comprises insulating ceramic system is stopped up, relative two walls of reaction chamber are provided with symmetric plane slit induction trunk and outlet passageway, two parallel electrodes are up and down arranged in the reaction chamber, top electrode links to each other with high-voltage pulse power source, the ceramic plate that its lower surface cladding thickness 2mm is following, lower electrode are fixed on the well heater and ground connection, and well heater links to each other with reaction chamber heating temperature control device outward.
Used high-voltage pulse power source among the present invention, with the parameter that adopts voltage 5～20kV, frequency 5～20kHz, rising edge of a pulse 20kV/ μ S, pulse width 2 μ S for well.
Beneficial effect of the present invention is: the present invention adopts high voltage pulse discharge plasma chemical vapour deposition amorphous hydrosilicon film, because high-voltage pulse power source can provide the electronics average energy of 1～10eV, electronics average energy far above the radio frequency discharge power supply, thereby realized amorphous hydrosilicon film on multiple conventional substrate or low melting point substrate in normal temperature or low temperature (50～100 ℃) fast deposition, the maximum deposition rate of amorphous hydrosilicon film can reach 20nm/min, and (about 5～10nm/min) have improved about twice than the PECVD amorphous silicon membrane sedimentation rate of routine.Energy gap 1.92～the 2.18eV of prepared amorphous hydrosilicon film, light, dark conductance are expected to obtain to use in fields such as solar cell, building energy conservation glass than greater than two orders of magnitude.
Description of drawings
Fig. 1 is the device of preparation amorphous hydrosilicon film of the present invention.
Embodiment
With reference to Fig. 1, the device of preparation amorphous hydrosilicon film of the present invention comprises that the reaction of insulating ceramic system stops up 5, relative two walls of reaction chamber are provided with symmetric plane slit induction trunk 6-1 and outlet passageway 6-2, two parallel electrodes are up and down arranged in the reaction chamber, top electrode 1 links to each other with high-voltage pulse power source 7, voltage 5～the 20kV of high-voltage pulse power source, frequency 5～20kHz, rising edge of a pulse 20kV/ μ S, pulse width 2 μ S.The ceramic plate 4 that the lower surface cladding thickness 2mm of top electrode 1 is following, lower electrode 2 are fixed on the well heater 9 and ground connection, and well heater 9 links to each other with reaction chamber heating temperature control device 8 outward.3 for being fixed on the substrate on the lower electrode among the figure.Adopt plane slit inlet, outlet passage, can make the reaction gas flow stable and uniform of reaction chamber.
Glass substrate through surface cleaning, is placed the lower electrode of reaction chamber, and reaction chamber is evacuated to 10
-3Pa is carrier gas with the pure nitrogen gas, and the volumetric concentration that feeds diluted in hydrogen is 20% silane (SiH
4) reactant gases, reaction chamber pressure is 200Pa, substrate is heated to 100 ℃, opens high-voltage pulse power source, adjusts voltage 12KV, frequency 20KHz, rising edge of a pulse 20kV/ μ S, pulse width 2 μ S, geseous discharge deposit film.
The amorphous hydrosilicon film that this example makes, thickness is even, the combination of film base is firm.Through the measuring and calculating of step instrument thickness, the maximum deposition rate of film is 20nm/min.Through ultraviolet-visible light transmission spectrum measuring and calculating, its optical band gap width is 1.92eV, greater than the optical band gap (about 1.8eV) of the amorphous hydrosilicon film of PECVD method preparation.
Embodiment 2
Aluminium sheet through surface cleaning, is placed the lower electrode of reaction chamber, and reaction chamber is evacuated to 10
-3Pa is carrier gas with the pure nitrogen gas, and the volumetric concentration that feeds diluted in hydrogen is 50% silane (SiH
4) reactant gases, reaction chamber pressure is 100Pa, substrate is heated to 50 ℃, opens high-voltage pulse power source, adjusts voltage 20KV, frequency 10KHz, rising edge of a pulse 20kV/ μ S, pulse width 2 μ S, geseous discharge deposit film.
The amorphous hydrosilicon film that this example makes, thickness is even, the combination of film base is firm.Through the measuring and calculating of step instrument thickness, the maximum deposition rate of film is 15nm/min.Through Raman spectrum analysis, 480cm
-1The feature Raman peaks of amorphous hydrogen silicon appears in the place, characterizes to have obtained typical amorphous hydrosilicon film.
Plastic base through surface cleaning, is placed the lower electrode of reaction chamber, and reaction chamber is evacuated to 10
-3Pa is carrier gas with the pure nitrogen gas, and the volumetric concentration that feeds diluted in hydrogen is 40% silane (SiH
4) reactant gases, reaction chamber pressure is 1000Pa, under the room temperature, opens high-voltage pulse power source, adjusts voltage 5KV, frequency 5KHz, rising edge of a pulse 20kV/ μ S, pulse width 2 μ S, geseous discharge deposit film.
The amorphous hydrosilicon film that this example makes, thickness is even, the combination of film base is firm.Through the measuring and calculating of step instrument thickness, the maximum deposition rate of film is 12nm/min.Through Raman spectrum analysis, 480cm
-1The feature Raman peaks of amorphous hydrogen silicon appears in the place, characterizes to have obtained typical amorphous hydrosilicon film.
Claims (4)
1. the method for preparing amorphous hydrosilicon film is characterized in that step is as follows:
Substrate behind clear Xian is placed reaction chamber, and reaction chamber is evacuated down at least 10
-3Pa, with the pure nitrogen gas is carrier gas, the volumetric concentration that feeds diluted in hydrogen is 20～50% silane reaction gas, and reaction chamber pressure is 100～1000Pa, and substrate is in room temperature or be heated to 50～100 ℃, open high-voltage pulse power source, adjust voltage 5～20KV, frequency 5～20KHz, rising edge of a pulse 20kV/ μ S, pulse width 2 μ S, the geseous discharge deposit film.
2. the method for preparing amorphous hydrosilicon film according to claim 1 is characterized in that said substrate is glass, silicon chip, plastics or aluminium.
3. be used to realize the device of the described preparation amorphous hydrosilicon film of claim 1 method, it is characterized in that the reaction that comprises insulating ceramic system stops up (5), relative two walls of reaction chamber are provided with symmetric plane slit induction trunk (6-1) and outlet passageway (6-2), two parallel electrodes are up and down arranged in the reaction chamber, top electrode (1) links to each other with high-voltage pulse power source (7), the ceramic plate (4) that its lower surface cladding thickness 2mm is following, lower electrode (2) is fixed on the last and ground connection of well heater (9), and well heater (9) links to each other with reaction chamber heating temperature control device (8) outward.
4. the device of preparation amorphous hydrosilicon film according to claim 3, the voltage that it is characterized in that high-voltage pulse power source are 5～20kV, frequency 5～20kHz, rising edge of a pulse 20kV/ μ S, pulse width 2 μ S.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710069121 CN101066842A (en) | 2007-06-05 | 2007-06-05 | Process and apparatus for preparing amorphous hydrosilicon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710069121 CN101066842A (en) | 2007-06-05 | 2007-06-05 | Process and apparatus for preparing amorphous hydrosilicon film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101066842A true CN101066842A (en) | 2007-11-07 |
Family
ID=38879565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200710069121 Pending CN101066842A (en) | 2007-06-05 | 2007-06-05 | Process and apparatus for preparing amorphous hydrosilicon film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101066842A (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101775591A (en) * | 2010-03-23 | 2010-07-14 | 福建钧石能源有限公司 | Method for depositing film |
| CN101469414B (en) * | 2007-12-26 | 2010-09-29 | 中国科学院微电子研究所 | Reaction chamber structure of plate type plasma reinforced chemical vapor deposition apparatus |
| CN101764177B (en) * | 2009-04-17 | 2011-04-06 | 南安市三晶阳光电力有限公司 | Preparation method for silicon-based solar energy thin film |
| CN102031503A (en) * | 2010-09-29 | 2011-04-27 | 理想能源设备(上海)有限公司 | Deposition method of silicon thin film |
| CN102102192A (en) * | 2010-11-19 | 2011-06-22 | 河南安彩高科股份有限公司 | Method for promoting crystallization of silicon film on glass substrate by using light with specific wavelength |
| CN103160812A (en) * | 2011-12-19 | 2013-06-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Lower electrode assembly and chemical vapor deposition equipment comprising the same |
| CN103184428A (en) * | 2012-02-29 | 2013-07-03 | 北京普纳森电子科技有限公司 | Integrated vacuum cavity structure applicable to plasma enhanced chemical vapor deposition processing equipment |
| CN103426788A (en) * | 2012-05-21 | 2013-12-04 | 理想能源设备(上海)有限公司 | Method for manufacturing semiconductor devices and adjusting substrate temperature in integrated system |
| CN102104088B (en) * | 2009-12-17 | 2014-03-12 | 吉林庆达新能源电力股份有限公司 | Method for depositing amorphous silicon film in solar battery production |
| CN103866296A (en) * | 2012-12-13 | 2014-06-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing equipment and lower electrode mechanism of the equipment |
| CN105483654A (en) * | 2016-01-22 | 2016-04-13 | 华北电力大学（保定） | Device for producing nano-crystalline silicon thin film |
| CN107267955A (en) * | 2016-01-22 | 2017-10-20 | 西尔科特克公司 | The limited thermal chemical vapor deposition coating of diffusion rate |
| CN108346554A (en) * | 2018-04-24 | 2018-07-31 | 西南林业大学 | A kind of plasma etching and depositing device and method |
| CN111403492A (en) * | 2018-12-27 | 2020-07-10 | 成都珠峰永明科技有限公司 | Preparation method of passivation layer for solar cell and preparation method of solar cell |
-
2007
- 2007-06-05 CN CN 200710069121 patent/CN101066842A/en active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101469414B (en) * | 2007-12-26 | 2010-09-29 | 中国科学院微电子研究所 | Reaction chamber structure of plate type plasma reinforced chemical vapor deposition apparatus |
| CN101764177B (en) * | 2009-04-17 | 2011-04-06 | 南安市三晶阳光电力有限公司 | Preparation method for silicon-based solar energy thin film |
| CN102104088B (en) * | 2009-12-17 | 2014-03-12 | 吉林庆达新能源电力股份有限公司 | Method for depositing amorphous silicon film in solar battery production |
| CN101775591A (en) * | 2010-03-23 | 2010-07-14 | 福建钧石能源有限公司 | Method for depositing film |
| CN102031503A (en) * | 2010-09-29 | 2011-04-27 | 理想能源设备(上海)有限公司 | Deposition method of silicon thin film |
| CN102031503B (en) * | 2010-09-29 | 2012-12-05 | 理想能源设备(上海)有限公司 | Deposition method of silicon thin film |
| CN102102192A (en) * | 2010-11-19 | 2011-06-22 | 河南安彩高科股份有限公司 | Method for promoting crystallization of silicon film on glass substrate by using light with specific wavelength |
| CN103160812A (en) * | 2011-12-19 | 2013-06-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Lower electrode assembly and chemical vapor deposition equipment comprising the same |
| CN103184428A (en) * | 2012-02-29 | 2013-07-03 | 北京普纳森电子科技有限公司 | Integrated vacuum cavity structure applicable to plasma enhanced chemical vapor deposition processing equipment |
| CN103426788A (en) * | 2012-05-21 | 2013-12-04 | 理想能源设备(上海)有限公司 | Method for manufacturing semiconductor devices and adjusting substrate temperature in integrated system |
| CN103866296A (en) * | 2012-12-13 | 2014-06-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing equipment and lower electrode mechanism of the equipment |
| CN103866296B (en) * | 2012-12-13 | 2016-04-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Apparatus for processing plasma and bottom electrode mechanism thereof |
| CN105483654A (en) * | 2016-01-22 | 2016-04-13 | 华北电力大学（保定） | Device for producing nano-crystalline silicon thin film |
| CN107267955A (en) * | 2016-01-22 | 2017-10-20 | 西尔科特克公司 | The limited thermal chemical vapor deposition coating of diffusion rate |
| CN108346554A (en) * | 2018-04-24 | 2018-07-31 | 西南林业大学 | A kind of plasma etching and depositing device and method |
| CN111403492A (en) * | 2018-12-27 | 2020-07-10 | 成都珠峰永明科技有限公司 | Preparation method of passivation layer for solar cell and preparation method of solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101066842A (en) | Process and apparatus for preparing amorphous hydrosilicon film | |
| EP2009140B1 (en) | Method for microcrystalline silicon film formation | |
| US7648892B2 (en) | Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device | |
| US20080188062A1 (en) | Method of forming microcrystalline silicon film | |
| US20130092525A1 (en) | Concentric flow-through plasma reactor and methods therefor | |
| US7521341B2 (en) | Method of direct deposition of polycrystalline silicon | |
| Kakiuchi et al. | Characterization of intrinsic amorphous silicon layers for solar cells prepared at extremely high rates by atmospheric pressure plasma chemical vapor deposition | |
| JP2001332749A (en) | Method for forming semiconductor thin film and amorphous silicon solar cell element | |
| CN1944308A (en) | Method for depositing hydrogenized non-crystal silicon carbon alloy film on glass substrate | |
| CN102002683B (en) | Method for preparing hydrogen-containing diamond film | |
| Soukup et al. | Thin films of a-SiGe: H with device quality properties prepared by a novel hollow cathode deposition technique | |
| RU2258764C1 (en) | Method and a device for settling at least partially of a crystalline silicon layer on a subtrate | |
| i Cabarrocas et al. | Low temperature plasma synthesis of silicon nanocrystals: a strategy for high deposition rate and efficient polymorphous and microcrystalline solar cells | |
| CN201080495Y (en) | Device for preparing amorphous hydrogen silicon film | |
| CN101480111A (en) | Plasma processing apparatus, plasma processing method and photoelectric conversion element | |
| CN113213774A (en) | Graphene glass and preparation method thereof | |
| Ma et al. | The effect of negative bias on the preparation conditions and structural changes in boron-doped nanocrystalline silicon thin films prepared on PET | |
| JP4510242B2 (en) | Thin film formation method | |
| JP2002164290A (en) | Method of manufacturing polycrystalline silicone film | |
| KR101177057B1 (en) | High speed deposition method of amorphous and crystalline sige thin film by reactive atmospheric pressure chemical vapor deposition | |
| Birkholz et al. | Solar-Cell Suitable μc-Si Films Grown by ECR-CVD | |
| CN102071406B (en) | Method for preparing thin film from ternary compound semiconductor material Si1-X-YCXNY | |
| Winata et al. | The Influence of Silane Gas Flow Rate on Optoelectronic Properties of μc-Si: H Prepared by HWC-VHF-PECVD | |
| KR20000052005A (en) | The fabrication method of the doped and undoped poly crystalline silicon films using high density plasma | |
| JPH09235674A (en) | Production of amorphous silicon-germanium hydride thin film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20071107 |