CN103400936A - n-type semiconductor organic film and Schottky characteristic self-rectifying resistive random access memory - Google Patents
n-type semiconductor organic film and Schottky characteristic self-rectifying resistive random access memory Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 239000004697 Polyetherimide Substances 0.000 claims abstract description 9
- 229920001601 polyetherimide Polymers 0.000 claims abstract description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 7
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims abstract description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 229910052709 silver Inorganic materials 0.000 claims abstract description 6
- 239000004332 silver Substances 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052802 copper Inorganic materials 0.000 claims abstract description 4
- 239000010949 copper Substances 0.000 claims abstract description 4
- 239000010936 titanium Substances 0.000 claims abstract description 4
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 4
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 3
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 22
- 230000008859 change Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 230000006870 function Effects 0.000 abstract description 9
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 230000010354 integration Effects 0.000 abstract description 2
- 230000007334 memory performance Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008520 organization Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- OZAIFHULBGXAKX-VAWYXSNFSA-N AIBN Substances N#CC(C)(C)\N=N\C(C)(C)C#N OZAIFHULBGXAKX-VAWYXSNFSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
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Abstract
The invention discloses an n-type semiconductor organic film and a Schottky characteristic self-rectifying resistive random access memory. The organic film is made of a blend consisting of methyl methacrylate (MMA) and polyetherimide (PEI); the Schottky characteristic self-rectifying resistive random access memory comprises a bottom electrode, a resistive layer deposited on the bottom electrode and an upper electrode deposited on the resistive layer; the bottom electrode is a conducting film electrode; the resistive layer is an n-type PEI-MMA organic film; and the upper electrode is a metal electrode, a silver electrode, a platinum electrode, a palladium electrode, an aluminum electrode, a titanium electrode or a copper electrode. According to the n-type semiconductor organic film, a good bipolar memory performance of a device is kept, the self-rectifying function of the memory is added, the problem of crosstalk existing in the 1R structure of the memory during three-dimensional integration can be solved, and the self-rectifying function has a Schottky characteristic; compared with a pn-junction self-rectifying resistive random access memory, the n-type semiconductor organic film has the advantages of high switching speed, low switching consumption and the like due to the adoption of an Schottky diode; and the power consumption is reduced, and the reading-writing speed is increased.
Description
Technical field
The present invention relates to the memory technology field, be specifically related to a kind of N-shaped Semiconductor Organic film and Schottky characteristic self-rectifying resistance-variable storing device.
Background technology
The conversion that resistance-variable storing device utilizes the resistance of resistive material that high resistance and low resistance occurs under electric field action realizes the storage of information " 0 " and " 1 ".The advantages such as resistance-variable storing device has, and but contractility simple in structure is good, storage density is high, low in energy consumption, read or write speed fast, the repeatable operation tolerance is strong, data hold time is long.The resistive material comprises metal oxide, sulfide, organic substance etc.
The 1R type is the simplest cellular construction of resistance-variable storing device array, usually adopts the mode of crossed array integrated, realizes the selection of memory cell by orthogonal upper/lower electrode wire.The crossed array of employing 1R structure is integrated can accomplish 4F with cellar area
2, greatly improve the storage density of RRAM device.Simultaneously, adopt the 1R structure can also adopt three-dimensional multilayer integrated, the area of each memory cell is 4F like this
2/ N, storage density significantly improves.But, adopt the 1R structure assembly to have very serious crosstalking (Cross talk) problem, namely when one in four adjacent cells be that high resistant and other three are while being low resistive state, when reading the resistance of high-impedance state, electric current is no longer by this high-impedance cell, but, by three low-resistance unit on every side, form current channel, misread thereby cause.And crosstalking not is to only occur on this high-impedance cell adjacent with three low-resistance unit, this current channel that three low-resistance unit form to around other high-impedance state also can be influential.Solve the way of crosstalking in the 1R structure assembly and usually have two kinds.A kind of is diode D of each memory cell series connection, forms the 1D1R storage organization.The operation that device is made but this method increase is known clearly, also be unfavorable for improving integration density.Another is exactly that exploitation has the resistance-variable storing device of self-rectification effect, has simultaneously storage and arrangement function, makes memory have to be equivalent to the function of 1D1R storage organization.
Existing self-rectifying resistance-variable storing device consists of p-type and N-shaped material usually, formation has the pn knot of rectification characteristic, rely on the unilateral conduction of pn knot to realize self-rectifying function, what Chinese patent 201110155291.8 was disclosed is exactly such self-rectifying resistance-variable storing device.Because the forward voltage drop of the relative Schottky diode of common pn junction diode is large, reverse recovery time is long, has therefore affected power consumption and the read or write speed of self-rectifying resistance-variable storing device.
Summary of the invention
The invention provides a kind of new purposes of material, and with this material, made a kind of quick self-rectifying resistance-variable storing device.
A kind of organic film of PEI-MMA as the N-shaped semi-conducting material, described PEI-MMA organic film is made by the blend that methyl methacrylate and Polyetherimide form.
A kind of self-rectifying resistance-variable storing device, comprise hearth electrode, be deposited on the change resistance layer on hearth electrode and be deposited on top electrode on change resistance layer, described hearth electrode is the conductive film electrode, described change resistance layer is N-shaped PEI-MMA organic film, and described top electrode is gold electrode, silver electrode, platinum electrode, palladium electrode, aluminium electrode, titanium electrode or copper electrode.
Described hearth electrode is deposited on glass substrate, and described conductive film electrode is the ito thin film electrode.
Beneficial effect of the present invention:
The self-rectifying resistance-variable storing device that is made as basis take the PEI-MMA organic film with N-shaped characteristic of semiconductor, not only retainer member has bipolarity memory function preferably, and increased the self-rectifying function of memory, can avoid the memory cross-interference issue that its 1R structure exists when three-dimensional is integrated, its self-rectifying function has Schottky characteristic, than pn knot self-rectifying resistance-variable storing device, has the switching speed that Schottky diode brings fast, little all advantages such as grade of switching loss, reduce power consumption, improved read or write speed.
Description of drawings
Fig. 1 is the device architecture figure of self-rectifying resistance-variable storing device of the present invention.
Fig. 2 is the self-rectifying bipolarity current-voltage curve figure of self-rectifying resistance-variable storing device of the present invention.
Fig. 3 is the semilog current-voltage curve figure of self-rectifying resistance-variable storing device of the present invention.
In Fig. 1: 1. glass substrate; 2.ITO film; 3.PEI-MMA organic film; 4. top electrode.
Embodiment
The preparation of PEI-MMA organic film:
With the PEI(Polyetherimide) be dissolved in chloroform, forming concentration is the PEI solution of 1mg/ml to 10mg/ml.Again with PEI solution by volume=ratio of 1:100 splashes into the MMA(methyl methacrylate) in, and stir, add the initiator B PO(benzoyl peroxide of 1wt%) or the AIBN(azodiisobutyronitrile), be warming up to
, stirred 3 hours, then be warming up to
, stir the blend solution that obtained MMA prepolymer and PEI in 30 minutes, add chloroform to dilute, synthesize molecular level blend (PEI-MMA), adopt the sol-gel spin coating proceeding to prepare the film of 20nm to 200nm series thickness.
Adopt HMS-2000 Hall effect instrument to test, the Hall coefficient RH of PEI-MMA film is-2560, shows that the PEI-MMA film has the N-shaped characteristic of semiconductor, is a kind of macromolecular material that relies on electron conduction.
Tin-doped indium oxide, generally referred to as ITO.Ito thin film has high conductance, high visible light transmissivity, high mechanical hardness and good chemical stability, is a kind of metalloid material, and its work function is up to the 5eV left and right.When with N-shaped material PEI-MMA, contacting, form Schottky barrier, realize rectification function.
Adopt magnetically controlled DC sputtering ceramic target technique that ITO is deposited on the glass substrate that thickness is 0.5mm and forms the ito thin film layer, its THICKNESS CONTROL is at 20nm between 400nm, and resistivity is controlled at 0
3 * 10
-4Between cm.This routine thickness is 234nm, and resistivity is 1.8 * 10
-4Cm.
Adopt the sol-gel spin coating proceeding that the PEI-MMA blend is deposited on the ito thin film layer, then exist
Vacuum drying chamber in be cured reaction 20 minutes, form the PEI-MMA film, its THICKNESS CONTROL at 20nm between 200nm.This routine thickness is 60nm.
Employing evaporation silver plating process and masking process on the PEI-MMA film, form the silver electrode of circular (can be also square) with deposition of silver, and thickness is 80nm.
The metal of institute's metal cladding can be Au Ag Pt Pd, aluminium, titanium or copper, its THICKNESS CONTROL at 60nm between 200nm.
After tested, as shown in Figure 2, resistance-variable storing device has the self-rectifying ability to its resistance-change memory characteristic.The semilog memory characteristics of Fig. 3 shows that device still has the bipolarity storage characteristics.
Claims (6)
1. organic film of the PEI-MMA as the N-shaped semi-conducting material, it is characterized in that: described PEI-MMA organic film is made by the blend that methyl methacrylate and Polyetherimide form.
2. Schottky characteristic self-rectifying resistance-variable storing device, comprise hearth electrode, be deposited on the change resistance layer on hearth electrode and be deposited on top electrode on change resistance layer, it is characterized in that: described hearth electrode is the conductive film electrode, described change resistance layer is N-shaped PEI-MMA organic film, and described top electrode is gold electrode, silver electrode, platinum electrode, palladium electrode, aluminium electrode, titanium electrode or copper electrode.
3. self-rectifying resistance-variable storing device according to claim 2, it is characterized in that: also comprise glass substrate, described hearth electrode is deposited on glass substrate.
4. self-rectifying resistance-variable storing device according to claim 2, it is characterized in that: described conductive film electrode is the ito thin film electrode, its thickness be 20nm to 400nm, resistivity is lower than 3 * 10
-4Cm, but be not 0.
5. according to claim 2,3 or 4 described self-rectifying resistance-variable storing devices, it is characterized in that: described N-shaped PEI-MMA organic film thickness is that 20nm is to 200nm.
6. self-rectifying resistance-variable storing device according to claim 5 is characterized in that: being shaped as of described top electrode is circular or square, and thickness is that 60nm is to 200nm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310324856.XA CN103400936B (en) | 2013-07-30 | 2013-07-30 | A kind of n-type semiconductor organic film and Schottky characteristic self-rectifying resistance-variable storing device |
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|---|---|---|---|
| CN201310324856.XA CN103400936B (en) | 2013-07-30 | 2013-07-30 | A kind of n-type semiconductor organic film and Schottky characteristic self-rectifying resistance-variable storing device |
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| CN103400936A true CN103400936A (en) | 2013-11-20 |
| CN103400936B CN103400936B (en) | 2015-11-18 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105489754A (en) * | 2014-10-08 | 2016-04-13 | 华邦电子股份有限公司 | Self-rectification memory unit structure of resistance random access memory |
| US9978941B2 (en) | 2014-09-26 | 2018-05-22 | Winbond Electronics Corp. | Self-rectifying resistive random access memory cell structure |
| CN110112291A (en) * | 2019-05-08 | 2019-08-09 | 兰州大学 | Resistance-variable storing device and preparation method thereof |
| CN112599664A (en) * | 2020-11-25 | 2021-04-02 | 南京大学 | Ultralow-energy-consumption flexible thin film memristor for simulating nerve synapse and preparation method thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9978941B2 (en) | 2014-09-26 | 2018-05-22 | Winbond Electronics Corp. | Self-rectifying resistive random access memory cell structure |
| CN105489754A (en) * | 2014-10-08 | 2016-04-13 | 华邦电子股份有限公司 | Self-rectification memory unit structure of resistance random access memory |
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| CN112599664A (en) * | 2020-11-25 | 2021-04-02 | 南京大学 | Ultralow-energy-consumption flexible thin film memristor for simulating nerve synapse and preparation method thereof |
| CN112599664B (en) * | 2020-11-25 | 2023-09-22 | 南京大学 | Ultra-low energy consumption flexible thin film memristor simulating nerve synapses and preparation method thereof |
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