CN103400936B - A kind of n-type semiconductor organic film and Schottky characteristic self-rectifying resistance-variable storing device - Google Patents
A kind of n-type semiconductor organic film and Schottky characteristic self-rectifying resistance-variable storing device Download PDFInfo
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Abstract
The invention discloses a kind of n-type semiconductor organic film and Schottky characteristic self-rectifying resistance-variable storing device.The blend that described organic film is made up of methyl methacrylate and Polyetherimide is made; Described Schottky characteristic self-rectifying resistance-variable storing device, the top electrode comprising hearth electrode, be deposited on the change resistance layer on hearth electrode and be deposited on change resistance layer, described hearth electrode is conductive film electrode, described change resistance layer is N-shaped PEI-MMA organic film, and described top electrode is gold electrode, silver electrode, platinum electrode, palladium electrode, aluminium electrode, Ti electrode or copper electrode.The present invention not only retainer member has good bipolarity memory function, and add the self-rectifying function of memory, the memory cross-interference issue that its 1R structure exists when three-dimensional is integrated can be avoided, its self-rectifying function has Schottky characteristic, tie self-rectifying resistance-variable storing device than pn, there is the switching speed that Schottky diode brings fast, little all advantages such as grade of switching loss, reduce power consumption, improve read or write speed.
Description
Technical field
The present invention relates to memory technology field, be specifically related to a kind of n-type semiconductor organic film and Schottky characteristic self-rectifying resistance-variable storing device.
Background technology
Resistance-variable storing device utilizes the resistance of resistive material the conversion of high resistance and low resistance to occur under electric field action to realize the storage of information " 0 " and " 1 ".Resistance-variable storing device have structure simple, can good, the advantage such as storage density is high, low in energy consumption, read or write speed fast, repeatable operation tolerance is strong, data hold time is long of contractility.Resistive material comprises metal oxide, sulfide, organic substance etc.
1R type is the simplest cellular construction of resistance-variable storing device array, usually adopts the mode of crossed array integrated, is realized the selection of memory cell by orthogonal upper/lower electrode wire.The crossed array of employing 1R structure is integrated can accomplish 4F by cellar area
2, greatly improve the storage density of RRAM device.Meanwhile, adopt 1R structure that three-dimensional multilayer can also be adopted integrated, the area of each like this memory cell is 4F
2/ N, storage density significantly improves.But, 1R structure assembly is adopted to there is very serious crosstalk (Crosstalk) problem, namely when when in four adjacent cells is high resistant, other three is all low resistive state, when reading the resistance of high-impedance state, electric current is no longer by this high-impedance cell, but by three low-resistance unit of surrounding, form current channel, thus cause and misread.And crosstalk is not only occur in this high-impedance cell adjacent with three low-resistance unit, this current channel that three low-resistance unit are formed also has impact to other high-impedance state of surrounding.The way solving crosstalk in 1R structure assembly has two kinds usually.One is that each memory cell is connected a diode D, forms 1D1R storage organization.But such a process increases the operation that device manufactures, be also unfavorable for improving integration density.Another is exactly that exploitation has the resistance-variable storing device of self-rectification effect, has storage and arrangement function simultaneously, memory is had be equivalent to the function of 1D1R storage organization.
Existing self-rectifying resistance-variable storing device is made up of p-type and N-shaped material usually, form the pn knot with rectification characteristic, rely on the unilateral conduction of pn knot to realize self-rectifying function, disclosed by Chinese patent 201110155291.8 is exactly such self-rectifying resistance-variable storing device.Because the forward voltage drop of the relative Schottky diode of common pn junction diode is large, reverse recovery time is long, therefore have impact on power consumption and the read or write speed of self-rectifying resistance-variable storing device.
Summary of the invention
The invention provides a kind of novelty teabag of material, and make a kind of quick self-rectifying resistance-variable storing device with this material.
As a PEI-MMA organic film for n-type semiconductor, the blend that described PEI-MMA organic film is made up of methyl methacrylate and Polyetherimide is made.
A kind of self-rectifying resistance-variable storing device, the top electrode comprising hearth electrode, be deposited on the change resistance layer on hearth electrode and be deposited on change resistance layer, described hearth electrode is conductive film electrode, described change resistance layer is N-shaped PEI-MMA organic film, and described top electrode is gold electrode, silver electrode, platinum electrode, palladium electrode, aluminium electrode, Ti electrode or copper electrode.
Described hearth electrode is deposited on glass substrate, and described conductive film electrode is ito thin film electrode.
Beneficial effect of the present invention:
To have the self-rectifying resistance-variable storing device be made based on the PEI-MMA organic film of n-type semiconductor characteristic, not only retainer member has good bipolarity memory function, and add the self-rectifying function of memory, the memory cross-interference issue that its 1R structure exists when three-dimensional is integrated can be avoided, its self-rectifying function has Schottky characteristic, self-rectifying resistance-variable storing device is tied than pn, there is the switching speed that Schottky diode brings fast, little all advantages such as grade of switching loss, reduce power consumption, improve read or write speed.
Accompanying drawing explanation
Fig. 1 is the device architecture figure of self-rectifying resistance-variable storing device of the present invention.
Fig. 2 is the self-rectifying Bipolar current-voltage curve of self-rectifying resistance-variable storing device of the present invention.
Fig. 3 is the semilog current-voltage curve figure of self-rectifying resistance-variable storing device of the present invention.
In Fig. 1: 1. glass substrate; 2.ITO film; 3.PEI-MMA organic film; 4. top electrode.
Embodiment
The preparation of PEI-MMA organic film:
By PEI(Polyetherimide) be dissolved in chloroform, form the PEI solution that concentration is 1mg/ml to 10mg/ml.Again by PEI solution by volume=ratio of 1:100 instillation MMA(methyl methacrylate) in, and to stir, add the initiator B PO(benzoyl peroxide of 1wt%) or AIBN(azodiisobutyronitrile), be warming up to
, stir 3 hours, be then warming up to
, stir the blend solution that 30 minutes obtain MMA prepolymer and PEI, add chloroform and dilute, synthesize molecular level blend (PEI-MMA), adopt sol-gel spin coating proceeding to prepare the film of 20nm to 200nm series thickness.
Adopt HMS-2000 Hall effect instrument to test, the Hall coefficient RH of PEI-MMA film is-2560, shows that PEI-MMA film has n-type semiconductor characteristic, is a kind of macromolecular material relying on electron conduction.
Tin-doped indium oxide, generally referred to as ITO.Ito thin film has high conductance, high visible light transmissivity, high mechanical hardness and good chemical stability, and be a kind of metalloid material, its work function is up to about 5eV.When contacting with N-shaped material PEI-MMA, forming Schottky barrier, realizing rectification function.
Adopt magnetically controlled DC sputtering ceramic target technique to be deposited on by ITO glass substrate that thickness is 0.5mm forms ito thin film layer, and its THICKNESS CONTROL is between 20nm to 400nm, and resistivity controls 0
3 × 10
-4between cm.This routine thickness is 234nm, and resistivity is 1.8 × 10
-4cm.
Adopt sol-gel spin coating proceeding to be deposited on ito thin film layer by PEI-MMA blend, then exist
vacuum drying chamber in be cured reaction 20 minutes, form PEI-MMA film, its THICKNESS CONTROL is between 20nm to 200nm.This routine thickness is 60nm.
Adopt evaporation silver plating process and masking process by deposition of silver on PEI-MMA film, form the silver electrode of circular (also can be square), thickness is 80nm.
The metal of institute's metal cladding can be Au Ag Pt Pd, aluminium, titanium or copper, and its THICKNESS CONTROL is between 60nm to 200nm.
After tested, as shown in Figure 2, resistance-variable storing device has self-rectifying ability to its resistance-change memory characteristic.The semilog memory characteristics of Fig. 3 shows that device still has bipolarity storage characteristics.
Claims (6)
1. the PEI-MMA organic film as n-type semiconductor, it is characterized in that: the blend that described PEI-MMA organic film is made up of methyl methacrylate and Polyetherimide is made, concrete preparation method comprises: Polyetherimide be dissolved in chloroform, forms the PEI solution that concentration is 1mg/ml to 10mg/ml; Again by PEI solution by volume=ratio of 1:100 instillation methyl methacrylate in; stir; add initator benzoyl peroxide or the azodiisobutyronitrile of 1wt%; be warming up to 80 DEG C, stir 3 hours, be then warming up to 120 DEG C; stir the blend solution that 30 minutes obtain MMA prepolymer and PEI; add chloroform to dilute, synthesize molecular level blend PEI-MMA, adopt sol-gel spin coating proceeding to prepare the film of 20nm to 200nm series thickness.
2. a Schottky characteristic self-rectifying resistance-variable storing device, the top electrode comprising hearth electrode, be deposited on the change resistance layer on hearth electrode and be deposited on change resistance layer, it is characterized in that: described hearth electrode is ito thin film electrode, described change resistance layer is PEI-MMA organic film as claimed in claim 1, and described top electrode is gold electrode, silver electrode, platinum electrode, palladium electrode, aluminium electrode, Ti electrode or copper electrode.
3. self-rectifying resistance-variable storing device according to claim 2, is characterized in that: also comprise glass substrate, and described hearth electrode is deposited on glass substrate.
4. self-rectifying resistance-variable storing device according to claim 2, is characterized in that: described ito thin film electrode, its thickness is 20nm to 400nm, and resistivity is lower than 3 × 10
-4Ω cm, but be not 0.
5. the self-rectifying resistance-variable storing device according to claim 2,3 or 4, is characterized in that: described PEI-MMA organic film thickness is 20nm to 200nm.
6. self-rectifying resistance-variable storing device according to claim 5, is characterized in that: the shape of described top electrode is for circular or square, and thickness is 60nm to 200nm.
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| TWI553925B (en) | 2014-09-26 | 2016-10-11 | 華邦電子股份有限公司 | Self-rectifying resistive random access memory cell structure |
| CN105489754B (en) * | 2014-10-08 | 2019-07-26 | 华邦电子股份有限公司 | Self-rectifying resistor type random access memory memory cell structure |
| CN110112291B (en) * | 2019-05-08 | 2021-01-05 | 兰州大学 | Resistive random access memory and preparation method thereof |
| CN112599664B (en) * | 2020-11-25 | 2023-09-22 | 南京大学 | Ultra-low energy consumption flexible thin film memristor simulating nerve synapses and preparation method thereof |
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