CN103594622A - High-consistency resistive random access memory structure and manufacturing method thereof - Google Patents
High-consistency resistive random access memory structure and manufacturing method thereof Download PDFInfo
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- CN103594622A CN103594622A CN201310624918.9A CN201310624918A CN103594622A CN 103594622 A CN103594622 A CN 103594622A CN 201310624918 A CN201310624918 A CN 201310624918A CN 103594622 A CN103594622 A CN 103594622A
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Abstract
A resistive random access memory structure sequentially comprises a substrate, an insulating layer, a bottom electrode, a resistive material thin film and a top electrode. Compared with a main current resistive random access memory structure, the resistive random access memory structure is characterized in that the resistive material thin film comprises a triangular region higher than a peripheral region in metal ion doping concentration, so that the resistive behavior of the resistive random access memory structure can occur at the peak position through control. A manufacturing process of the resistive random access memory structure is compatible with a CMOS process, and process steps are simple and easy to achieve. In addition, the consistency of the resistive random access memory structure is improved remarkably.
Description
Technical field
The present invention relates to resistance-variable storing device (RRAM), be specifically related to a kind of high conforming resistance variation memory structure and preparation method thereof, belong to nonvolatile memory (Nonvolatile memory) performance optimization and manufacturing technology field thereof in cmos vlsi (ULSI).
Background technology
Resistance-variable storing device (RRAM) is the nonvolatile memory (NVM) that a kind of resistive characteristic based on storage medium realizes information storage.In recent years, NVM device is due to its high density, high-speed and low-power consumption, in the middle of the development of memory in occupation of consequence more and more.But, along with device size constantly dwindles, especially enter after nano-scale node, at present the NVM device of main flow will reach capacity as the ability of dwindling (scaling) of Flash, and random fluctuation significantly increases, and integrity problem is increasingly serious.The deficiency of working life, read or write speed in addition, the high voltage in write operation etc. has also limited further developing of flash memory from many aspects.In this case, people in decades, propose the novel memory devices such as charge trap memory (CTM), ferroelectric memory (FeRAM), magnetic memory (MRAM), phase transition storage (PRAM), resistance-variable storing device in the past in succession.Wherein, resistance-variable storing device is simple in structure with it, the superperformance of excellent performance, is causing and is researching and developing widely upsurge in recent years, and becoming the strong competitor of main flow memory of future generation.
The resistance-variable storing device (as shown in Figure 1) of main flow is the inorganic resistance-variable storing device based on transition metal oxide (TMO) at present, mainly top electrode, resistive material film and hearth electrode three-decker, consists of.It is generally acknowledged, its resistive process is similar to soft breakdown:, under electric field action, the regional area of resistive material film produces a large amount of defects, and under electric field action, moves and pile up, and finally at local, forms low-resistance conductive channel.As can be seen here, the performance important of electric field to resistance-variable storing device.Simultaneously, as seen from Figure 1, the whole device area internal electric field of resistance-variable storing device is evenly distributed, so in the different operating of different components or same device, the particular location that soft breakdown occurs resistive material film under electric field action is random, and this causes one of major reason of resistance-variable storing device consistency problem just.
Summary of the invention
Based on above problem, the present invention is by carrying out the metal ion mixing of left and right sides incline direction, utilize the occlusion effect of top electrode figure, metal ion mixing concentration in resistive material film bottom triangle region is significantly improved, that is form the structure that electric field is concentrated reinforcement that is beneficial to of needle pattern; By choose reasonable doped metal ion, oxygen vacancy concentration in delta-shaped region is also significantly improved, and then effectively improve device consistency simultaneously.
Inventive principle: the general easy prominence in medium of electric field is concentrated and strengthened, so if can be controlled in resistive material film, form overshooting shape structure, also just can control low-resistance conductive channel and add strength formation at this electric field; On the other hand, Main Viewpoints thinks that conductive channel is comprised of oxygen room at present, if oxygen vacancy concentration is significantly higher than other regions within the scope of certain local, under electric field action, conductive channel easily forms in this region, thereby effectively improves the consistency of device.The present invention mainly proposes solution from above two aspects to device consistency problem.
Technical scheme of the present invention is as follows:
A kind of resistance variation memory structure (as shown in Figure 8), comprises substrate, insulating barrier, hearth electrode, resistive material film, top electrode successively; Described resistance variation memory structure is compared with main flow resistance variation memory structure (shown in Fig. 1), its difference is, the delta-shaped region that comprises the projecting region of metal ion mixing concentration in described resistive material film, makes the resistive behavior of device controlled in spike place generation (as shown in 6 in Fig. 2 and Fig. 8).
Wherein, metal ion to the doping of resistive material film should meet: the formation in its oxygen room, peripheral region can form lower than the oxygen room around of metal ion in resistive material can, the interior oxygen vacancy concentration of delta-shaped region that can guarantee like this high-dopant concentration also significantly improves, and forms the preformed passageway of conductive channel under subsequent electric field effect.
Described hearth electrode material is conducting metal or metal nitride, as Pt, Ag, Ir, Ru, Au, Pd, W, Ni, Cu, Ti or TiN etc.
Described top electrode material adopts inert metal (as Pt, Ir or Au etc.), makes its conductivity not affected by metal ion mixing, and has higher stability, to guarantee the block effect of top electrode figure in metal ion injection process.
Described resistive material film is preferentially selected the transition metal oxide material of present main flow, as HfOx, TaOx, and ZrOx or WOx etc.
The present invention provides a kind of preparation method of resistance variation memory structure simultaneously, comprising:
(1) prepare hearth electrode, PVD sputter (or electron beam evaporation) metal Ti/M on Si substrate, wherein Ti is as adhesion layer, and hearth electrode M is conducting metal or metal nitride, by peeling off or etching process graphically forms hearth electrode;
(2) by sputtering method (or thermal oxidation process, or ALD method), prepare resistive material film;
(3) PVD sputter (or electron beam evaporation) preparation graphical top electrode, definition device size;
(4) take top electrode as baffle plate, the metal ion mixing that resistive material film is carried out to two incline directions in left and right forms the delta-shaped region that comprises the projecting region of metal ion mixing concentration.
The preparation method of described resistance variation memory structure, should meet the metal ion of resistive material film doping: the formation in its oxygen room, peripheral region can form energy lower than the oxygen room around of metal ion in resistive material.
The resistance-variable storing device design that the present invention proposes mainly contains following 2 advantages:
(1) manufacture craft and CMOS process compatible, and processing step is simple, easily realizes.
(2) by electric field, strengthen effectively improving with the double effect of pre-conductive channel the consistency of device: as described in preparation flow, by the metal ion mixing (selecting suitable incline direction according to resistive material film thickness and top electrode graphic width) of bilateral incline direction, the occlusion effect of using top electrode figure can form a highest delta-shaped region of metal ion mixing concentration in resistive material film bottom.The needle pattern structure on this delta-shaped region top can make electric field strengthen at spike place, thereby conductive channel under electrical operation is preferentially formed at spike place; Simultaneously by choose reasonable doped metal ion, make in this delta-shaped region oxygen vacancy concentration the highest and become pre-conductive channel, and then significantly improve the consistency of resistive device.
Accompanying drawing explanation
Fig. 1 is existing main flow resistance variation memory structure schematic diagram.
Fig. 2 is resistance variation memory structure schematic cross-section of the present invention.
Fig. 3-Fig. 8 is the structural representation in preparation resistance-variable storing device processing step of the present invention.
Fig. 9 is metal ion mixing direction schematic diagram.
Illustrate: 1-substrate; 2-insulating barrier; 3-hearth electrode; 4-resistive material film; 5-top electrode; The delta-shaped region that 6-metal ion mixing concentration is high; α is tilted ion implantation angle; γ is Implantation critical angle.
Note: the thickness in accompanying drawing only, for signal explanation, not represents its actual thickness, does not also represent each layer thickness ratio.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail:
The technique that the present invention prepares high consistency resistance-variable storing device is described below by reference to the accompanying drawings:
1) preparing substrate silicon chip 1(but be not limited to Si substrate, common backing material).As shown in Figure 3;
2) prepare insulating barrier.On silicon substrate, grow SiO2 as insulating barrier 2, as shown in Figure 4;
3) prepare hearth electrode.PVD sputter (or electron beam evaporation) metal Ti/M, wherein Ti is as adhesion layer, M is hearth electrode 3(metal or metal nitride), can adopt as Pt, Ag, Ir, Ru, Au, Pd, W, Ni, Cu, Ti, TiN, TaN etc., as shown in Figure 5;
4) prepare resistive material film.By PVD sputtering method, prepare TaOx resistive material film 4, (thickness is greatly about 10～50nm), as shown in Figure 6;
5) prepare top electrode.PVD sputter (or electron beam evaporation) preparation graphical top electrode 5, definition device size scope (2 μ m～100, μ m * 2 μ m * 100 μ m), as shown in Figure 7;
6) metal ion mixing.As shown in Figure 8, take top electrode as baffle plate, the metal ion mixing that resistive material film is carried out to left and right sides incline direction forms the delta-shaped region that comprises the projecting region of metal ion mixing concentration.When metal ion injects, the incline direction (inclination angle is α) of take carries out Implantation, wherein should guarantee that inclined angle alpha is less than critical angle gamma, critical angle gamma=arctan(TaOx thickness/0.5 top electrode peak width), can guarantee like this to form triangle high-concentration dopant region.
The present invention directly adopts top electrode graphics field to do the baffle plate of Implantation, need not increase extra processing step, can carry out controlled metal ion mixing to resistive material film, make to produce in resistive material film the delta-shaped region of high metal ion doping content and high oxygen vacancy concentration, by electric field, strengthen and the double effect of pre-conductive channel, can prepare high consistency resistance-variable storing device.
Claims (10)
1. a resistance variation memory structure, comprises substrate, insulating barrier, hearth electrode, resistive material film, top electrode successively; It is characterized in that the delta-shaped region that comprises the projecting region of metal ion mixing concentration in described resistive material film makes that the resistive behavior of device is controlled to be occurred at spike place.
2. resistance variation memory structure as claimed in claim 1, is characterized in that, to the metal ion of resistive material film doping, should meet: the formation in its oxygen room, peripheral region can form energy lower than the oxygen room around of metal ion in resistive material.
3. resistance variation memory structure as claimed in claim 1, is characterized in that, described hearth electrode material is conducting metal or metal nitride.
4. resistance variation memory structure as claimed in claim 1, is characterized in that, described top electrode material adopts inert metal, makes its conductivity not affected by metal ion mixing, to guarantee the block effect of top electrode figure in metal ion injection process.
5. resistance variation memory structure as claimed in claim 1, is characterized in that, described resistive material film is selected transition metal oxide material.
6. resistance variation memory structure as claimed in claim 3, is characterized in that, described hearth electrode material is Pt, Ag, Ir, Ru, Au, Pd, W, Ni, Cu, Ti or TiN.
7. resistance variation memory structure as claimed in claim 4, is characterized in that, described inert metal is Pt, Ir or Au.
8. resistance variation memory structure as claimed in claim 5, is characterized in that, described transition metal oxide material is HfOx, TaOx, ZrOx or WOx.
9. a preparation method for resistance variation memory structure, is characterized in that, comprising:
(1) prepare hearth electrode, PVD sputter or electron beam evaporation metal Ti/M on Si substrate, wherein Ti is as adhesion layer, and hearth electrode M is conducting metal or metal nitride, by peeling off or etching process graphically forms hearth electrode;
(2) by sputtering method or ALD method or thermal oxidation process, prepare resistive material film;
(3) PVD sputter or electron beam evaporation preparation graphical top electrode, definition device size;
(4) take top electrode as baffle plate, the metal ion mixing that resistive material film is carried out to two incline directions in left and right forms the delta-shaped region that comprises the projecting region of metal ion mixing concentration.
10. the preparation method of resistance variation memory structure as claimed in claim 9, is characterized in that, to the metal ion of resistive material film doping, should meet: the formation in its oxygen room, peripheral region can form energy lower than the oxygen room around of metal ion in resistive material.
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| CN106229407A (en) * | 2016-09-08 | 2016-12-14 | 北京大学 | A kind of high concordance resistance-variable storing device and preparation method thereof |
| CN106910822A (en) * | 2017-03-17 | 2017-06-30 | 电子科技大学 | A kind of resistance changing film memory and preparation method thereof |
| CN107221599A (en) * | 2017-05-25 | 2017-09-29 | 中国科学院微电子研究所 | A kind of method for the resistance-variable storing device performance for optimizing oxide-base |
| CN108565337A (en) * | 2018-04-03 | 2018-09-21 | 集美大学 | The resistance-variable storing device preparation method of positioning plasma treatment is carried out with nanometer shielding layer |
| CN112259681A (en) * | 2019-07-22 | 2021-01-22 | 华邦电子股份有限公司 | Resistive random access memory structure and manufacturing method thereof |
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