CN106229407A - A kind of high concordance resistance-variable storing device and preparation method thereof - Google Patents
A kind of high concordance resistance-variable storing device and preparation method thereof Download PDFInfo
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- CN106229407A CN106229407A CN201610809598.8A CN201610809598A CN106229407A CN 106229407 A CN106229407 A CN 106229407A CN 201610809598 A CN201610809598 A CN 201610809598A CN 106229407 A CN106229407 A CN 106229407A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 150000002739 metals Chemical class 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 15
- 239000010931 gold Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910003070 TaOx Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910002370 SrTiO3 Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 230000004807 localization Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 230000005284 excitation Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005549 size reduction Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 208000035126 Facies Diseases 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000007334 memory performance Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of switching materials after formation, e.g. doping
- H10N70/043—Modification of switching materials after formation, e.g. doping by implantation
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- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
The present invention provides a kind of high conforming resistive memory and preparation method thereof, belongs to cmos vlsi technical field.This resistance-variable storing device includes substrate and the bottom electrode resistance changing film upper electrode arrangement being positioned on substrate, bottom electrode is positioned at substrate, being resistance changing film between upper and lower electrode, the local doping metals of described resistance changing film, described doped region is 50% the 10% of device working region.The passage on earth of resistance-variable storing device of the present invention is more prone to form fusing in the region of localization doping, thus randomly generating and fusing of conductive channel is limited in the region adulterated in local, effectively reduce the randomness of conductive channel, thus improve the concordance of resistance-variable storing device.
Description
Technical field
The invention belongs in quasiconductor (semiconductor) and cmos vlsi (ULSI) is non-volatile
Property memorizer (Non-volatile Memory) technical field, is specifically related to one and has high conforming resistance-variable storing device
The device structure design of (resistive random access memory) and preparation method thereof.
Background technology
Since transistor invention, the development of semiconductor and IC technology promotes whole information industry or even science and technology
Progress.Since nearly half a century, it then follows the prediction of Moore's Law, memory device integrated level based on CMOS technology is with every 18
The speed that the moon doubles quickly increases.Constantly reduce however as characteristic size, after nano-scale node, at present
The size reduction of main flow memorizer is all up to the limit.Tradition non-volatility memorizer faces during size persistently reduces
Increasing challenge, the random fluctuation such as parameter dramatically increases, and integrity problem is increasingly serious.Account for Vehicles Collected from Market main
The flash memory (flash) of share, due to the restriction at aspects such as size reduction, power consumption and speed, can not fully meet non-volatile
Property memorizer development requirement.Various new non-volatility memorizer technology is arisen at the historic moment, including ferroelectric memory (FeRAM),
Magnetic memory (MRAM), phase transition storage (PRAM), resistance-variable storing device (RRAM) etc..Resistance-variable storing device is in high integration, low merit
The advantage of the aspects such as consumption and read or write speed has made the contenders in memorizer of new generation.But the skill that RRAM is current
Art development also has certain gap from reality application, and its technological challenge faced specifically includes that device consistency problem, switching speed
Optimize.The present invention i.e. proposes solution for problem above.
Resistance-variable storing device relies on and realizes high-impedance state (" 0 " state) and low resistance state (" 1 " shape under different applied voltage excitation
State) between reversible State Transferring, high-impedance state and low resistance state can be kept after removing voltage drive, thus realize the non-of data
Volatile storage.Resistance-variable storing device is made up of the sandwich structure of the metal-change resistance layer-metal of simple in construction, therefore can lead to
Cross simple crossbar structure to realize ultra-large and very high-density resistance-variable storing device array, reduce owing to increasing crystalline substance
Body pipe is as the area consumption selecting pipe to be brought, and its characteristic size area can be reduced to 4F2.Additionally, integration density is permissible
Form 3D structure by stacked multilayer crossbar structure further and obtain huge lifting.
Yet with the feature randomly generating and fusing that has of the conductive channel in resistance-variable storing device, device therefore can be caused
The concordance of part comes into question, the parameters of i.e. corresponding resistive, as operation voltage, high-impedance state and low resistance state resistance etc. can be not
Fluctuate with in device switching process different with same device.It is integrated close that the characteristic of this instability constrains resistance-variable storing device
The raising of degree, too increases the difficulty of periphery circuit design simultaneously, therefore reduces device undulatory property, boost device concordance for
The commercial application of resistance-variable storing device has great significance.The present invention i.e. proposes solution party mainly for above consistency problem
Case.
Summary of the invention
The present invention proposes a kind of based on using traditional cmos process to realize having high conforming resistive memory,
To reducing the brought problem that randomly generates and fuse of resistance-variable storing device conductive channel.
The technical solution used in the present invention is as follows:
A kind of high concordance resistance-variable storing device, electric including substrate and the lower electrode-resistance changing film-upper strata being positioned on substrate
Electrode structure, lower electrode is positioned at substrate, is resistance changing film between upper and lower layer electrode, and doped region is device working region
50% the 10% of (the resistance changing film region between upper/lower electrode).
Further, doped region is positioned at the center of device working region.
Further, described doping metals is element ordinal more than the element of metal in metal-oxide in resistive material
Ordinal number.
Further, the metal-doped dosage range (10 of resistance changing film10—1025/cm3), design parameter can be according to device
The scope of part operation electric current carries out calculating adjustment.
Further, described electrode-change resistance layer-electrode structure can be Metal-Insulator-Metal capacitance structure,
Metal-Semiconductor-Metal capacitance structures etc., use simple " sandwich " structure.
Alternatively, described electrode is realized by semiconductor CMOS process by metal material.Described electrode can use multiple gold
Belong to material, such as Ti, Al, Au, W, Cu and TiN etc..
Alternatively, described resistance changing film i.e. intermediate functional layer can use the transition metal oxide with excellent resistive characteristic
And other oxides, such as TaOx、HfOx、SiOx, or SrTiO3Deng；May be used without organic material, such as parylene etc..
Alternatively, described substrate can use Si or SiO2Substrate.
The method that another object of the present invention is to prepare above-mentioned high concordance resistance-variable storing device, comprises the steps:
1) on substrate, define the figure of bottom electrode；Use the method deposit metal of magnetron sputtering, peel off and form lower electricity
Pole；
2) mode of sputtering is used to deposit resistance changing film；
3) photoetching is utilized to define the region of local doping on a photoresist；
4) mode of ion implanting is used to carry out metal-doped to resistance changing film；
5) electrode and bottom electrode fairlead figure in definition, deposits metal electrode, peels off the upper electrode of formation and bottom electrode draws
Portal, prepare resistance-variable storing device as claimed in claim 1.
The present invention improves the concordance of resistance-variable storing device not by the simple impurity that introduces, but passes through localization
Doped metallic elements, by being locally implanted region, Implantation Energy, implantation dosage and choosing this four dimensions of special metal element ginseng
The common effect of number, thus reach to improve the conforming purpose of device.By optimizing and revising of above parameter, resistance-variable storing device
Passage is more prone to form fusing in the region of localization doping on earth, thus by the restriction that randomly generates and fuse of conductive channel
In the region of local doping, effectively reduce the randomness of conductive channel, thus improve the concordance of resistance-variable storing device.Resistive
Store conforming raising the integration density of storage array and the scale of mass production of resistance-variable storing device are had great significance.
Accompanying drawing explanation
Fig. 1 present invention uses current-voltage (I-V) characteristic of its resistive process that traditional DC Sweep mode obtains to show
It is intended to；
Fig. 2-6 is corresponding to the enforcement step of embodiment；
Fig. 7 is the legend of Fig. 2-Fig. 6；
Fig. 8 is embodiment of the present invention experimental result schematic diagram.
Detailed description of the invention
Below in conjunction with the accompanying drawings and specific embodiment, the present invention is described further.
Example below is respectively adopted TaOxRealize high concordance resistive with Au deposit respectively as change resistance layer and injection element
The preparation of memory device.Provide the material that critical process step is used, and provide the embodiment of high concordance resistive memory.
Resistance-variable storing device based on tantalum oxide has the memory performance of excellence, including durability, ultrafast the opening of superelevation
Close speed and good retention performance.Additionally, tantalum oxide also has the features such as heat stability height, chemical property torpescence.Gold is made
For highly stable inert metal element, being incorporated in tantalum oxide as impurity can be not oxidized, such that it is able at specific bar
Formed nanocrystalline under part so that conductive channel tends to be formed and fusing along the region with gold doping.Two bi-materials
Dominant Facies combines, and adds the design of physical mechanism aspect and the technological parameter of optimization, can realize improving resistance-variable storing device consistent
The purpose of property, lifting and large-scale production for resistance-variable storing device crossbar array of structures integration density have important meaning
Justice.
Specific embodiment is as follows:
1) select the backing material used, can select according to purposes；Such as select Si substrate；
2) lithographic definition goes out bottom electrode figure, and uses PVD or evaporation deposition lower metal electrode, and lower electrode material can be
Pt, TaN, Ir etc., as shown in Figure 2；
3) PVD reactive sputtering method is used to prepare one layer of resistance changing film material: concrete material can be TaOx, HfOx etc.,
Thickness is between 30nm-100nm, as shown in Figure 3；
4) lithographic definition goes out the region of local doping, i.e. the symmetrical centre district in upper and lower electrode crossing (folding) region of device
Territory, injecting area is that device area i.e. goes up 1/2nd of electrode area, and uses ion implanting to inject Au+Ion, such as Fig. 4 institute
Show；
5) lithographic definition goes out bottom electrode fairlead, under using the method for dry etching to etch on the figure defining out
Electrode fairlead, etch thicknesses is the resistive material deposited and the sum of energy band decorative layer material thickness, and removes photoresist, as
Shown in Fig. 5；
6) electrode pattern in photoetching on the basis of superincumbent, and use PVD or evaporation deposition electrode of metal, upper electrode material
Material can be Ta, TiN etc., peels off and forms upper electrode pattern, as shown in Figure 6.
For the resistance-variable storing device using said method to prepare, use its resistive mistake that traditional DC Sweep mode obtains
Current-voltage (I-V) characteristic of journey is as shown in Figure 1: in figure 1 device under the excitation of forward voltage by high-impedance state to low-resistance
The transition process of state；2 low resistance states keep process；3 devices under the excitation of negative voltage by low resistance state to high-impedance state
Transition process；4 high-impedance states keep process.
Make the bottom electrode ground connection of device, then the voltage going up electrode can control the resistance of memorizer so that it is occur high resistant and
Conversion between low-resistance, i.e. memorizer " 0 ", the conversion between " 1 " two states, it was demonstrated that can the resistive in the middle of electrode knot press from both sides
The surface of layer realizes resistive effect should.As shown in Figure 8, the distribution table funerary objects part of operation voltage and high low resistance state has extraordinary one
Cause property, it was demonstrated that the technical program can effectively improve the concordance of resistance-variable storing device.
Above example is only limited in order to technical scheme to be described, the ordinary skill of this area
Technical scheme can be modified or equivalent by personnel, without departing from the spirit and scope of the present invention, and this
The protection domain of invention should be as the criterion with described in claim.
Claims (10)
1. a resistance-variable storing device, it is characterised in that include substrate and the bottom electrode-resistance changing film-upper electrode being positioned on substrate
Structure, bottom electrode is positioned at substrate, is resistance changing film between upper and lower electrode, the local doping metals of described resistance changing film, institute
State that doped region is device working region 50% 10%.
2. resistance-variable storing device as claimed in claim 1, it is characterised in that described doped region is positioned in device working region
Heart position.
3. resistance-variable storing device as claimed in claim 1, it is characterised in that described bottom electrode-resistance changing film-upper electrode arrangement is
Metal-Insulator-Metal capacitance structure or Metal-Semiconductor-Metal capacitance structure.
4. resistance-variable storing device as claimed in claim 1, it is characterised in that described resistance changing film uses the transition gold of resistive characteristic
Belong to oxide.
5. resistance-variable storing device as claimed in claim 3, it is characterised in that transition metal oxide is TaOx、HfOx、SiOx, or
Person SrTiO3。
6. resistance-variable storing device as claimed in claim 3, it is characterised in that it is thin that described doping metals is that element ordinal is more than resistive
The element ordinal of metal in the metal-oxide of film.
7. resistance-variable storing device as claimed in claim 1, it is characterised in that described resistance changing film uses organic material
parylene。
8. resistance-variable storing device as claimed in claim 1, it is characterised in that described electrode uses Ti, Al, Au, W, Cu or TiN.
9. resistance-variable storing device as claimed in claim 1, it is characterised in that described substrate uses Si or SiO2Substrate.
10. a preparation method for resistance-variable storing device as claimed in claim 1, comprises the steps:
1) on substrate, define the figure of bottom electrode；Use the method deposit metal of magnetron sputtering, peel off and form bottom electrode；
2) mode of sputtering is used to deposit resistance changing film；
3) photoetching is utilized to define the region of local doping on a photoresist；
4) mode of ion implanting is used to carry out metal-doped to resistance changing film；
5) electrode and bottom electrode fairlead figure in definition, deposits metal electrode, peels off and forms upper electrode and bottom electrode fairlead,
Prepare resistance-variable storing device as claimed in claim 1.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106910822A (en) * | 2017-03-17 | 2017-06-30 | 电子科技大学 | A kind of resistance changing film memory and preparation method thereof |
| CN113088912A (en) * | 2021-04-05 | 2021-07-09 | 大连理工大学 | Silicon-doped magnetron sputtering process for improving reliability of TaOx-based resistive random access memory |
| WO2022105606A1 (en) * | 2020-11-19 | 2022-05-27 | International Business Machines Corporation | Resistive switching memory cell |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101257089A (en) * | 2007-01-04 | 2008-09-03 | 三星电子株式会社 | Resistive random access memory and manufacturing method for the same |
| CN101826598A (en) * | 2010-05-05 | 2010-09-08 | 北京大学 | Polymorphic organic resistive random access memory and preparation method |
| CN103117359A (en) * | 2013-02-07 | 2013-05-22 | 北京大学 | High-reliability nonvolatile memory and preparation method thereof |
| CN103227284A (en) * | 2013-05-09 | 2013-07-31 | 北京大学 | High-consistency high-speed resistive random access memory (RRAM) and producing method thereof |
| CN103594622A (en) * | 2013-11-28 | 2014-02-19 | 北京大学 | High-consistency resistive random access memory structure and manufacturing method thereof |
-
2016
- 2016-09-08 CN CN201610809598.8A patent/CN106229407B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101257089A (en) * | 2007-01-04 | 2008-09-03 | 三星电子株式会社 | Resistive random access memory and manufacturing method for the same |
| CN101826598A (en) * | 2010-05-05 | 2010-09-08 | 北京大学 | Polymorphic organic resistive random access memory and preparation method |
| CN103117359A (en) * | 2013-02-07 | 2013-05-22 | 北京大学 | High-reliability nonvolatile memory and preparation method thereof |
| CN103227284A (en) * | 2013-05-09 | 2013-07-31 | 北京大学 | High-consistency high-speed resistive random access memory (RRAM) and producing method thereof |
| CN103594622A (en) * | 2013-11-28 | 2014-02-19 | 北京大学 | High-consistency resistive random access memory structure and manufacturing method thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106910822A (en) * | 2017-03-17 | 2017-06-30 | 电子科技大学 | A kind of resistance changing film memory and preparation method thereof |
| WO2022105606A1 (en) * | 2020-11-19 | 2022-05-27 | International Business Machines Corporation | Resistive switching memory cell |
| US11456416B2 (en) | 2020-11-19 | 2022-09-27 | International Business Machines Corporation | Resistive switching memory cell |
| GB2616558A (en) * | 2020-11-19 | 2023-09-13 | Ibm | Resistive switching memory cell |
| CN113088912A (en) * | 2021-04-05 | 2021-07-09 | 大连理工大学 | Silicon-doped magnetron sputtering process for improving reliability of TaOx-based resistive random access memory |
| CN113088912B (en) * | 2021-04-05 | 2021-12-07 | 大连理工大学 | Silicon-doped magnetron sputtering process for improving reliability of TaOx-based resistive random access memory |
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