CN103387335A - Substrate cutting device and substrate cutting method - Google Patents
Substrate cutting device and substrate cutting method Download PDFInfo
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- CN103387335A CN103387335A CN2013101659670A CN201310165967A CN103387335A CN 103387335 A CN103387335 A CN 103387335A CN 2013101659670 A CN2013101659670 A CN 2013101659670A CN 201310165967 A CN201310165967 A CN 201310165967A CN 103387335 A CN103387335 A CN 103387335A
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- 239000000758 substrate Substances 0.000 title claims abstract description 201
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000005520 cutting process Methods 0.000 title abstract description 34
- 239000006227 byproduct Substances 0.000 claims description 12
- 238000005286 illumination Methods 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 abstract 2
- 230000008569 process Effects 0.000 description 11
- 238000001816 cooling Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000004447 accommodation reflex Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000003245 working effect Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000004323 axial length Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0626—Energy control of the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/16—Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention relates to a substrate cutting device and a substrate cutting method. The substrate cutting device is characterized by comprising a working table (100) for placing a substrate (10), a laser part (200) for generating laser beams (L1, L2), beam splitters (BS) for splitting the laser beams (L1, L2) into first laser beams (L1) and a second laser beam (L2), a first processing part (300) for subjecting the internal of the substrate (10) to scribing treatment with the first laser beams (L1) to form a first etching part (P1, P2), and a second processing part (400) for subjecting the internal of the substrate (10) to beam swing scribing treatment with the second laser beam (L2) to form a second etching part (P3).
Description
Technical field
The present invention relates to cutter for substrate and method thereof.More particularly, relate to a kind of first laser beam that utilizes (scribe) processing is rule to form the first etched part in substrate inside, utilize the second laser beam to carry out beam wobbling line processing to form the second etched part to substrate inside, thus the cutter for substrate of cutting substrate and method thereof.
Background technology
Utilize the materials processing of laser, in the expansion rapidly of application of whole industry.Laser processing is in the handiness of accuracy, technique, noncontact processibility, have excellent specific property to the aspects such as heat affecting of material, has been substituted after generation lines of cut such as utilizing diamond to apply mechanical stress and carry out the existing technique of the substrates such as cutting semiconductor chip or glass.
Fig. 1 is the schematic diagram of the structure of the cutter for substrate that relates to of prior art.
With reference to Fig. 1,, in order to cut the substrate 10 that is placed on worktable 1, use the break bar 4 that is formed by the good material of the hardness such as diamond or nickel, at first form the line with x axle parallel direction on substrate 10.Secondly, will carry out optically focused by condenser lens 3 by the laser beam L that laser section 2 generates heats with the line zone to using break bar 4 to form on substrate 10.Then, via the cooling gas of cooling end 5 or the cooling line zone of by laser beam L, being heated of cooling liqs.As mentioned above, after forming line by being machined on substrate 10 of use break bar 4, through heating and cooling, online zone generation tensile stress is with cutting substrate.In addition, the prior art of cutting substrate is openly speciallyyed permit communique 1998-084225 grade openly by Korea S.
The cutter for substrate that prior art relates to, carry out cutting substrate by tensile stress, so produce tiny crack and processing fragment etc. on line of cut.These tiny cracks and processing fragment etc., can reduce the cutting quality of substrate.
In addition, recently, the display unit such as LED, LCD are used thin base, but do not produce the required tensile stress of cutting substrate on ultrathin substrate, so can not utilize described method to carry out substrate cut.
In addition, recently, display unit is the thin substrate of used thickness not only, also uses large-area substrates.Large-area substrates, because tiny crack also can affect its cutting quality, so can not utilize described method to carry out substrate cut.In addition, while utilizing the laser cutting large-area substrates, consume too much process time and cost.
Summary of the invention
Therefore, the present invention proposes for the problem that solves prior art as above, and purpose is, a kind of cutter for substrate and method thereof that can improve the substrate cut quality is provided.
In addition, the object of the invention is to, a kind of cutter for substrate and method thereof that can cutting ultra thin type substrate be provided.
In addition, the object of the invention is to, a kind of cutter for substrate and the method thereof that can save the cutting large-area substrates of process time and cost is provided.
Described purpose of the present invention is by following cutter for substrate realization, and this cutter for substrate comprises: worktable is used for placing substrate; Laser section, be used for generating laser beam; Spectroscope, be divided into the first laser beam and the second laser beam with described laser beam; The first processing department, utilize described the first laser beam to the processing of ruling of described substrate inside, to form the first etched part; And second processing department, utilize described the second laser beam to carry out beam wobbling line processing to described substrate inside, to form the second etched part.
Described the first processing department can comprise at least one lens working.
The described lens working different positions in substrate inside respectively forms focal point.
Described lens working can carry out the line processing that thickness is 10 μ m to 500 μ m to described substrate inside.
The thickness of described substrate can be for below 2mm, and the length on a limit of described substrate is 0.5m to 3.5m.
Described the second processing department can form by the angle that changes described the second described substrate of laser beam irradiation described the second etched part.
Illumination angle by described the second processing department changes, and the second laser beam irradiation is 10mm to 300mm to the scope of described substrate.
Can also comprise that by product removes section, the by product that produces while being used for sucking the described substrate of processing.
The wavelength of described laser beam can be 100nm to 1100nm.
The pulse width of described laser beam can be 100fs to 1ns.
The degree of depth of described the first etched part can be with lower surface from described substrate identical apart from essence to the regulation place of described substrate inside, the degree of depth of described the second etched part and upper surface from described substrate are identical apart from essence to the described regulation place of described substrate inside.
In addition, described purpose of the present invention realizes by method for dividing substrate, this method for dividing substrate, is characterized in that, utilizes the first processing department that comprises at least one lens working, to substrate inside with the processing of ruling of the first laser beam, to form the first etched part, utilize the second processing department, carry out beam wobbling line processing to described substrate is inner with the second laser beam, to form the second etched part, thereby cut described substrate.
, according to the present invention as constructed as above, can improve the cutting quality of substrate.
In addition, can cutting ultra thin type substrate.
In addition, can save process time and cost, the cutting large-area substrates.
In addition, do not need the device of cooling base can cutting substrate yet.
Description of drawings
Fig. 1 is the schematic diagram of the structure of the cutter for substrate that relates to of prior art.
Fig. 2 is the schematic diagram of the structure of the cutter for substrate that relates to of one embodiment of the invention.
Fig. 3 is the schematic diagram of the structure of the second processing department of relating to of one embodiment of the invention.
Fig. 4 is the sectional view of the substrate cut principle that relates to of one embodiment of the invention.
Fig. 5 is the main sectional view of the substrate cut process that relates to of one embodiment of the invention.
Reference numeral:
10: substrate
100: worktable
200: laser section
300: the first processing departments
310,320: lens working
400: the second processing departments
410: reflector
500: by product is removed section
BS: spectroscope
L1: the first laser beam
L2: the second laser beam
H1, H2: focal point
P1, P2: the first etched part
P3: the second etched part
A: illumination angle
Embodiment
Below, with reference to accompanying drawing with can implement specific embodiments of the invention and describe the present invention in detail., in order to enable those skilled in the art to abundant enforcement, describe these embodiment in detail.Be interpreted as, various embodiment of the present invention differ from one another, but mutually do not repel.For example, concrete shape, the structure and characteristics of an embodiment who puts down in writing here,, without departing from the spirit and scope of the present invention, also can be realized by other embodiment.In addition, it will be appreciated that for, position or the configuration of the indivedual integrants in disclosed embodiment separately, also can change without departing from the spirit and scope of the present invention.Therefore, the meaning of detailed description described later and indefinite, explain in precise term, and protection scope of the present invention only is as the criterion with the content that claims are put down in writing, and comprises all scopes that the content advocated with its claim is equal to.In the accompanying drawings, similarly Reference numeral represents same or similar function, for the ease of understanding also likely its forms such as exaggeration expression length, area, thickness.
Below, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that the general technical staff of the technical field of the invention is easy to implement.
In this manual, laser processing can be understood as the laser radiation substrate and forms line, groove, pattern etc. or carry out the meaning of cutting object body.
With reference to Fig. 2, the cutter for substrate that one embodiment of the invention relate to can comprise worktable 100, laser section 200, the first processing department 300, the second processing department 400 and spectroscope BS(beam splitter).
Can place substrate 10 and carry out substrate 10 cutting techniques at worktable 100.Substrate 10 can be glass, semiconductor wafer etc.Particularly, preferable substrate 10 is transparent materials, so that laser beam L1, L2 can be in substrate 10 internal focus.In addition, as the substrate that is used for display unit etc., the thickness of preferable substrate 10 is below 2mm.In addition, as the large-area substrates that is used for display unit etc., the length on a limit of preferable substrate 10 is 0.5m to 3.5m.
In addition, cutter for substrate of the present invention can also comprise worktable handover section (not shown) at worktable 100, worktable 100 is moved to x, y or z direction of principal axis, and laser section 200, the first processing department 300, the second processing department 400 etc. are with the stationary state configuration, to carry out substrate cut.Certainly, also can stationary work-table 100, and laser section 200, the first processing department 300, the second processing department 400 etc. are moved to x, y or z direction of principal axis, to carry out substrate cut.But for convenience of explanation, below 100 of worktable of supposition move and the situation of carrying out substrate cut describes to the x direction of principal axis.
The pulse width of laser beam L1, L2 can be 100fs(femtosecond: femtosecond) to 1ns(nanosecond: nanosecond).Wherein, the picosecond laser bundle with the above pulse width of several psecs is that photochemical reaction take non-thermal response is as main, so have the characteristic that can carry out high-accuracy processing.Femtosecond laser beam with the above pulse width of several femtoseconds can export 10 after amplification
12Watt, be terawatt (TW), can process any properties of materials so have.In addition, femtosecond laser beam does not need to gather an effect on point with obtaining photon energy on laser focusing to one point yet, can carry out high-accuracy processing.
In addition, in order to improve laser beam L1, the specific absorption of L2 on the substrates such as glass or semiconductor wafer 10, the wavelength of laser beam L1, L2 can be 100nm to 1100nm.
Spectroscope BS can be segmented in that laser section 200 generates and laser beam by spectroscope BS.Laser beam can be divided into the first laser beam L1 and the second laser beam L2.That is, the part of the laser beam that generates in laser section 200 is reflected and directive the first processing department 300 by spectroscope BS, path before rest part keeps and directive the second processing department 400.
The first processing department 300 can be utilized the first laser beam L1 that is reflected by spectroscope BS, rules and processes to remove the established part of substrate 10 inside, thereby form the first etched part P1, P2.At this moment, with respect to the first laser beam L1, worktable 100 can move to the x direction of principal axis, to form first etched part P1, the P2 parallel with the x axle.The first etched part P1, P2 can be understood as has roughly the space of groove shape (for example cavity (cavity)), and detailed content is with reference to Fig. 4 and Fig. 5 aftermentioned.
The first processing department 300 can comprise at least one lens working 310,320.Figure 2 illustrates two lens workings, yet in cutter for substrate of the present invention, the quantity of lens working can change suitably according to the thickness of substrate 10, material etc.Usually, substrate 10 is thicker, material is harder, and the quantity of the lens working that comprises in the first processing department 300 is more.Below, for convenience of explanation, supposition the first processing department 300 as shown in Figure 2 comprises that two lens workings 310,320 describe.
Lens working 310, the 320th, can focus on the first laser beam L1 the condenser lens (focusing lens) of substrate 10 inside, and the f-number of each lens working can be different.By regulating f-number, lens working 310,320 with the distance of substrate 10 etc., each lens working can form focal point H1, H2(namely in the position that differs from one another of substrate 10 inside, differs from one another highly).Detailed item aftermentioned.
The second processing department 400 can be utilized the second laser beam L2 via spectroscope BS, thereby carry out beam wobbling line processing, with the established part of removing substrate 10 inside, forms the second etched part P3.At this moment, with respect to the second laser beam L2, worktable 100 can move to the x direction of principal axis, to form the second etched part P3 parallel with the x axle.The second etched part P3 also can be understood as has roughly the space of groove shape (for example cavity (cavity)), and detailed content is with reference to Fig. 4 and Fig. 5 aftermentioned.
The second processing department 400 can be carried out cutting substrate 10 by the illumination angle A that changes the second laser beam L2 irradiated substrate 10.That is, can in the wide scope parallel with the first etched part P1, P2 on substrate 10, preferably in the scope of 10nm to 300mm length, to substrate 10 tops, shine back and forth the second laser beam L2 by changing illumination angle A, thus cutting substrate 10.
Fig. 3 is the schematic diagram that the structure of the second processing department 400 that one embodiment of the invention relate to is shown.
With reference to Fig. 3, can configure reflector 410 in the second processing department 400 inside, the path of this reflector 410 and the second laser beam L2 forms predetermined angular.Reflector 410 can link with the reflector control part (not shown) of controlling illumination angle A, so that incide the second laser beam L2 directive substrate 10 of the second processing department 400.
The reflector control part can be regulated by the move angle of accommodation reflex plate 410 the illumination angle A size of the second laser beam L2, thereby controls the scope for the second laser beam L2 that shines back and forth at the inner second etched part P3 of formation of substrate 10.Figure 3 illustrates reflector 410 and only with an axle motion, form the situation of linear pattern the second etched part P3, still, the reflector control part also can make reflector 410 carry out two axle movement and form have curve, the second etched part P3 of the apperance such as circle.In addition, can constitute, the plural reflector 410 the second processing department 400 internal configuration link each other, reflected by a plurality of reflectors 410 in order to incide the second laser beam L2 of the second processing department 400, thus the size of regulating illumination angle A.In addition, can pass through accommodation reflex plate 410 movement velocitys, control the shuttle speed of the second laser beam L2 on substrate 10 tops of needs cutting.
Therefore, can come the illumination angle A size of accommodation reflex plate 410 or the pace of change of illumination angle A by reflector control part (not shown), so the second processing department 400 is to the second laser beam L2 of first laser beam L1 wider scope of substrate 10 top irradiation ratio the first processing departments 300.
In addition, cutter for substrate of the present invention can also comprise that by product removes section 500.Rule processing or beam wobbling line adds man-hour to substrate 100, produces the by products such as minuteness particle, processing fragment.If these by products remain on substrate 100, become the underproof reason of substrate, laser beam L1, the L2 optically focused on substrate 10 is departed from, thereby the bad situation of substrate cut occurs.Therefore, remove section 500 at by product and be provided with the air intake unit, to suck the by product that produces in substrate 10 processing, thereby can improve the reliability and stability of substrate cut technique.
Below, the first processing department 300 of the cutter for substrate that relates to by one embodiment of the invention and principle and the process of the second processing department 400 cutting substrates 10 are described.
Fig. 4 means the sectional view of substrate 10 incision principles that one embodiment of the invention relate to.
With reference to Fig. 4, first processing department 300 irradiation the first laser beam L1, to form focal point H1, H2 in substrate 10 inside.For example, when utilization comprises two lens workings 310, the first processing department 300 of 320, lens working 310 can form focal point H1 in the certain limit of substrate 10 inside, and lens working 320 is not to form focal point H2 with the overlapping mode of focal point H1 essence in the certain limit of substrate 10 inside.
Lens working 310 is after the inner formation focal point of substrate 10 H1, to x direction of principal axis moving substrate 10 and the processing of ruling, then, lens working 320 is after the high position than focal point H1 of substrate 10 inside forms focal point H2, to x direction of principal axis moving substrate 10 and the processing of ruling.Certainly, lens working 310 and lens working 320 also can add man-hour ruling, and inner formation of substrate 10, only have z direction of principal axis height location difference and identical focal point H1, the H1 of the axial level attitude of x.
So, can utilize the first processing department 300 to rule processing to remove substrate 10 internal rules parts, thereby in substrate 10 inside, form have roughly first etched part P1, P2(Fig. 5 of groove shape parallel with the x direction of principal axis).At this moment, the length of the first etched part P1, P2 is identical with the axial length essence of the x of substrate 10, and the degree of depth of the first etched part P1, P2 is identical apart from essence with regulation place from substrate 10 lower surfaces to substrate 10 inside.In addition, from light gathering efficiency or the line of the first laser beam L1, save the angle consideration process period, the degree of depth of preferred the first etched part P1, P2 is below 500 μ m.
After the line processing of carrying out the first processing department 300, can utilize the second processing department 400 to carry out beam wobbling line processing to remove the established part of substrate 10 inside, thereby in substrate 10 inside, form have roughly second etched part P3(Fig. 5 of groove shape parallel with the x direction of principal axis).At this moment, the length of the second etched part P3 can be identical with the axial length essence of the x of substrate 10, the degree of depth of the second etched part P3 with from substrate 10 upper surfaces to substrate 10 inside as illustrating the first etched part P1, P2 forming process as described in regulation place identical apart from essence.
The the second etched part P3 that forms by the second processing department 400, with preformed the first etched part P1, when P2 joins, realizes that substrate 10 cuts.
So, in the present invention, utilize the second processing department 400 to shine back and forth the second laser beam L2 in the wide scope on substrate 10 tops, so different from the first processing department 300, energy is assembled by spells on the inner focal point (not shown) that forms of substrate 10, therefore the tiny crack equivalent damage can be do not produced around it when forming the second etched part P3, thereby the cutting quality of substrate 10 can be improved.
Fig. 5 means the main sectional view of substrate 10 cutting process that one embodiment of the invention relate to.
, with reference to (a) of Fig. 5, at first, substrate 10 is placed on worktable 100.The laser beam that generates in laser section 200 is divided into the first laser beam L1 and the second laser beam L2 by spectroscope BS.Then, with reference to (b) of Fig. 5, the first laser beam L1 that is reflected by spectroscope BS is by lens working 310 at the inner focal point H1 that form of substrate 10, and to the processing of rule of x direction of principal axis, its result is at substrate 10 inside formation the first etched part P1.Then, with reference to (c) of Fig. 5, the first laser beam L1 that is reflected by spectroscope BS is by lens working 320 at the inner focal point H2 that form of substrate 10, and to the processing of rule of x direction of principal axis, its result is at substrate 10 inside formation the first etched part P2.Then,, with reference to (d) of Fig. 5,, via the second laser beam L2 of spectroscope BS, by the second processing department 400, on substrate 10 tops, to the x direction of principal axis, carry out beam wobbling line processing, its result is at the inner second etched part P3 that forms of substrate 10.The second processing department 400 can continue to carry out beam wobbling line processing to the x direction of principal axis, to form the second darker etched part P3.Then, with reference to (e) of Fig. 5, along with the degree of depth that forms the second etched part P3 is deepened, the first etched part P1, P2 and the second etched part P3 join, thus cutting substrate 10.
The present invention utilizes the first processing department of laser beam and the line of the second processing department to process cutting substrate by employing, thereby has advantages of and can improve the cutting substrate quality.
In addition, during cutting substrate, do not need tensile stress, thus advantage that not only can cutting ultra thin type substrate, and do not need the device of cooling base.
In addition, have wide scope illuminating laser beam and second processing department of carrying out beam wobbling line processing,, so can cut large-area substrates, have simultaneously and can improve the cutting substrate quality, save the advantage of cutting substrate process time and cost.
As mentioned above, the present invention is illustrated by preferred embodiments and drawings, but be not limited to described embodiment, in the scope that does not break away from purport of the present invention, the technician with general knowledge of the technical field of the invention can carry out various deformation and change.Will be understood that these variation and modification belong in the scope of the present invention and appended claim.
Claims (22)
1. a cutter for substrate, is characterized in that, comprising:
Worktable, be used for placing substrate;
Laser section, be used for generating laser beam;
Spectroscope, be divided into the first laser beam and the second laser beam with described laser beam;
The first processing department, utilize described the first laser beam to the processing of ruling of described substrate inside, to form the first etched part; And
The second processing department, utilize described the second laser beam to carry out beam wobbling line processing to described substrate inside, to form the second etched part.
2. cutter for substrate as claimed in claim 1, is characterized in that,
Described the first processing department comprises at least one lens working.
3. cutter for substrate as claimed in claim 2, is characterized in that,
Each described lens working forms focal point at the different positions of described substrate inside.
4. cutter for substrate as claimed in claim 2, is characterized in that,
Described lens working carries out to described substrate inside the line processing that thickness is 10 μ m to 500 μ m.
5. cutter for substrate as claimed in claim 1, is characterized in that,
The thickness of described substrate is below 2mm, and the length on a limit of described substrate is 0.5m to 3.5m.
6. cutter for substrate as claimed in claim 1, is characterized in that,
Described the second processing department forms described the second etched part by the angle that changes described the second described substrate of laser beam irradiation.
7. cutter for substrate as claimed in claim 6, is characterized in that,
Illumination angle by described the second processing department changes, and the second laser beam irradiation is 10mm to 300mm to the scope of described substrate.
8. cutter for substrate as claimed in claim 1, is characterized in that,
Also comprise that by product removes section, the by product that produces while being used for sucking the described substrate of processing.
9. cutter for substrate as claimed in claim 1, is characterized in that,
The wavelength of described laser beam is 100nm to 1100nm.
10. cutter for substrate as claimed in claim 1, is characterized in that,
The pulse width of described laser beam is 100fs to 1ns.
11. cutter for substrate as claimed in claim 1, is characterized in that,
The degree of depth of described the first etched part and lower surface from described substrate are identical apart from essence to the regulation place of described substrate inside, and the degree of depth of described the second etched part and upper surface from described substrate are identical apart from essence to the described regulation place of described substrate inside.
12. cutter for substrate as claimed in claim 1, is characterized in that,
Along with described the first etched part and described the second etched part are joined, substrate is cut off.
13. a method for dividing substrate, is characterized in that,
Utilization comprises the first processing department of at least one lens working, to substrate inside with the processing of ruling of the first laser beam, to form the first etched part,
Utilize the second processing department, to described substrate is inner, with the second laser beam, carry out beam wobbling line processing, to form the second etched part, thereby cut described substrate.
14. method for dividing substrate as claimed in claim 13, is characterized in that,
Each described lens working forms focal point at the different positions of described substrate inside.
15. method for dividing substrate as claimed in claim 13, is characterized in that,
Described lens working carries out to described substrate inside the line processing that thickness is 10 μ m to 500 μ m.
16. method for dividing substrate as claimed in claim 13, is characterized in that,
Described the second processing department forms described the second etched part by the angle that changes described the second described substrate of laser beam irradiation.
17. method for dividing substrate as claimed in claim 16, is characterized in that,
Change according to the illumination angle of described the second processing department, the second laser beam irradiation is 10mm to 300mm to the scope of described substrate.
18. method for dividing substrate as claimed in claim 13, is characterized in that,
The by product that produces while processing described substrate, sucked by the by product section of removing.
19. method for dividing substrate as claimed in claim 13, is characterized in that,
The wavelength of described laser beam is 100nm to 1100nm.
20. method for dividing substrate as claimed in claim 13, is characterized in that,
The pulse width of described laser beam is 100fs to 1ns.
21. method for dividing substrate as claimed in claim 13, is characterized in that,
The thickness of described the first etched part is the distance to any point of described substrate inside from the lower surface of described substrate, and the thickness of described the second etched part is the distance to the upper surface of described substrate from any point of described substrate inside.
22. method for dividing substrate as claimed in claim 13, is characterized in that,
Along with described the first etched part and described the second etched part are joined, substrate is cut off.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2012-0050289 | 2012-05-11 | ||
| KR1020120050289A KR20130126287A (en) | 2012-05-11 | 2012-05-11 | Substrate cutting and method |
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| CN103387335A true CN103387335A (en) | 2013-11-13 |
| CN103387335B CN103387335B (en) | 2016-01-20 |
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Cited By (3)
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| CN106670645A (en) * | 2017-02-17 | 2017-05-17 | 京东方科技集团股份有限公司 | Laser processing device and method |
| CN107645841A (en) * | 2017-11-02 | 2018-01-30 | 惠州市特创电子科技有限公司 | Micro carving machine and its cutting method |
| CN111451646A (en) * | 2020-04-24 | 2020-07-28 | 苏州镭明激光科技有限公司 | Processing technology for laser invisible cutting of wafer |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101789185B1 (en) * | 2016-02-05 | 2017-10-23 | 주식회사 이오테크닉스 | Laser processing method using an angle of inclination of laser beam |
| KR102074737B1 (en) * | 2018-01-04 | 2020-02-07 | 주식회사 넵시스 | Cutting Apparatus using Laser Spot Beam |
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| CN1386606A (en) * | 2001-05-21 | 2002-12-25 | 三星电子株式会社 | Method and device for cutting nonmetal substrate using laser beam |
| JP2003119044A (en) * | 2001-10-12 | 2003-04-23 | Quantum Design Japan Inc | Machining method and machining device for quartz by laser |
| CN101138807A (en) * | 2007-10-16 | 2008-03-12 | 友达光电股份有限公司 | Cutting equipment and cutting manufacturing technology |
| JP2011245774A (en) * | 2010-05-28 | 2011-12-08 | Mitsuboshi Diamond Industrial Co Ltd | Laser processing method |
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- 2012-05-11 KR KR1020120050289A patent/KR20130126287A/en not_active Application Discontinuation
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| CN1386606A (en) * | 2001-05-21 | 2002-12-25 | 三星电子株式会社 | Method and device for cutting nonmetal substrate using laser beam |
| JP2003119044A (en) * | 2001-10-12 | 2003-04-23 | Quantum Design Japan Inc | Machining method and machining device for quartz by laser |
| CN101138807A (en) * | 2007-10-16 | 2008-03-12 | 友达光电股份有限公司 | Cutting equipment and cutting manufacturing technology |
| JP2011245774A (en) * | 2010-05-28 | 2011-12-08 | Mitsuboshi Diamond Industrial Co Ltd | Laser processing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106670645A (en) * | 2017-02-17 | 2017-05-17 | 京东方科技集团股份有限公司 | Laser processing device and method |
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| CN107645841A (en) * | 2017-11-02 | 2018-01-30 | 惠州市特创电子科技有限公司 | Micro carving machine and its cutting method |
| CN111451646A (en) * | 2020-04-24 | 2020-07-28 | 苏州镭明激光科技有限公司 | Processing technology for laser invisible cutting of wafer |
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| Publication number | Publication date |
|---|---|
| KR20130126287A (en) | 2013-11-20 |
| CN103387335B (en) | 2016-01-20 |
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