CN103383957B - A kind of inverse conductivity type IGBT device - Google Patents
A kind of inverse conductivity type IGBT device Download PDFInfo
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Abstract
A kind of inverse conductivity type IGBT device, belongs to power semiconductor device technology field.The present invention utilizes the mixed crystal becoming component to make the collector region of IGBT, forms the band structure of energy gap gradual change.In collector region and drift region intersection, there is less energy gap, reduce the Built-in potential of collector region and drift region, alleviate snap-back phenomenon; Simultaneously due to collector region material component gradual change, form the energy gap of gradual change, the decelerating field of a few son is created in collector region, thus reduce the few son injection of drift region to collector region, improve collector region to drift region injection efficiency, stronger conductivity modulation effect can be obtained, be conducive to the forward conduction voltage drop reducing IGBT.
Description
Technical field
The invention belongs to power semiconductor device technology field, be specifically related to a kind of inverse conductivity type insulated gate bipolar transistor (IGBT) alleviating snap-back phenomenon.
Technical background
IGBT is the representational device of most in current middle large power, electrically Force system.It has been gathered MOSFET and has been easy to drive, and controls the advantage simple, switching frequency conduction voltage drop that is high and power transistor is low, is widely used in the fields such as civilian, commercial, national defence.
When adopting IGBT as switch element process high-power signal, each IGBT needs configuration one to have the use of identical withstand voltage anti-parallel diodes as afterflow, therefore, usual IGBT manufacturer also can design corresponding fly-wheel diode while Design and manufacture IGBT; At present, in most products, this diode needs to manufacture separately on another one chip, is finally encapsulated into together with IGBT again.Inverse conductivity type IGBT(is also known as RC-IGBT) its thought is when ensureing that IGBT performance meets the demands, anti-parallel diodes and IGBT are formed on the same chip, not only simplify manufacturing process like this, saved manufacturing cost, also make die area reduce, encapsulation volume reduces.
The basic implementation method of RC-IGBT is by introducing so-called " N+ collector electrode shorting region " structure in the P+ collector region, the back side of IGBT, as shown in Figure 1, the introducing of N+ collector electrode shorting region 9, together with PN junction in the body formed by P type base 4 and drift region 7 that itself exists, will introduce a P-i-N diode structure 13 contrary with IGBT on state characteristic in the inside of IGBT, this diode structure can be applied as fly-wheel diode.The introducing of N+ collector electrode shorting region 9 also can form impact to IGBT on state characteristic originally, one of major effect can produce negative differential resistance region in IGBT turn on process, i.e. snap-back phenomenon, as shown in Figure 2, the reason producing this phenomenon is: the extra N+ collector electrode shorting region 9 introduced introduces a monopolar current path, when grid adds the positive bias being greater than threshold value, when collector voltage is very little, electronic current 14 is via N+ collector electrode shorting region 9, emitter electrode 1 is arrived by conducting channel again by N-drift region 7, because N-drift region 7 doping content is very low and thickness is thicker in this current path, conducting resistance is larger, thus On current is very little, at this moment the work of RC-IGBT can be described as MOSFET work mode, the transverse current flowing through lateral resistance below N-drift region increases, and enough large bias voltage is produced on path resistor 15, positively biased on the PN junction finally making 10/N-drift region 7, P+ collector region, the back side be formed, along with collector voltage increases, this positive bias will increase to and make PN junction positively biased, P+ collector region, the back side 10 starts to produce to N-drift region 7 to inject, conductance modulation occurs, device enters IGBT mode of operation.Exactly because exist in RC-IGBT turn on process by MOSFET work mode to IGBT working mode change process, and conducting resistance declines rapidly due to conductivity modulation effect in transfer process, which results in the generation of snap-back phenomenon.
Snap-back phenomenon can affect the reliability of RC-IGBT in system application, therefore much research is all devoted to reduce even to eliminate snap-back, most effective measures are that the PN junction that in Fig. 1,10/N-drift region 7, P+ collector region is formed is opened under less monopolar current, so just derive two kinds to improve one's methods: one is the drift region path resistor 15 increasing transverse current below N-drift region 7,10/N-drift region, P+ collector region 7 is tied and is issued to cut-in voltage at more low current; Two is the Built-in potentials reducing 10/N-drift region 7, P+ collector region knot, makes PN junction cut-in voltage lower.Reduce the doping content of P+ collector region 10 or adopt low-gap semiconductor, can Built-in potential be reduced, but greatly can reduce the injection efficiency of P+ collector region 10 to N-drift region 7 like this, conductivity modulation effect is weakened, increasing the forward conduction voltage drop of IGBT.
Summary of the invention
In order to weaken inverse conductivity type IBGT device snap-back phenomenon while, reduce the forward conduction voltage drop of IGBT, improve device reliability, the invention provides a kind of inverse conductivity type IBGT device of improvement.
Core concept of the present invention is: utilize the mixed crystal becoming component to make the collector region of IGBT, form the band structure of energy gap gradual change.In collector region and drift region intersection, there is less energy gap, reduce the Built-in potential of collector region and drift region, alleviate snap-back phenomenon; Simultaneously due to collector region material component gradual change, form the energy gap of gradual change, the decelerating field of a few son is created in collector region, thus reduce the few son injection of drift region to collector region, improve collector region to drift region injection efficiency, stronger conductivity modulation effect can be obtained, be conducive to the forward conduction voltage drop reducing IGBT.
Technical solution of the present invention is as follows:
A kind of inverse conductivity type IGBT device, its structure as shown in Figure 3, comprises emitter structure, collector structure, grid structure and drift region structure, described emitter structure comprises metal emitting 1, heavy doping first conductive type semiconductor ohmic contact regions 2, heavy doping second conductive type semiconductor emitter region 3 and the first conductive type semiconductor tagma 4, wherein heavy doping first conductive type semiconductor ohmic contact regions 2 and heavy doping second conductive type semiconductor emitter region 3 are arranged in the first conductive type semiconductor tagma 4 independently of each other, and the surface of heavy doping first conductive type semiconductor ohmic contact regions 2 and heavy doping second conductive type semiconductor emitter region 3 all contacts with metal emitting 1, described collector structure comprises heavy doping first conductive type semiconductor collector region 11, heavy doping second conductive type semiconductor collector electrode shorting region 9 and metal collector 12, wherein heavy doping second conductive type semiconductor collector electrode shorting region 9 and heavy doping first conductive type semiconductor collector region 11 are spaced apart from each other, and the lower surface of the two all contacts with metal collector 12, described drift region structure comprises light dope second conductive type semiconductor drift region 7, described grid structure comprises polygate electrodes 5 and gate oxide 6, described drift region structure is between described emitter structure and described collector structure, wherein: the back side, light dope second conductive type semiconductor drift region 7 of drift region structure contacts with the heavy doping second conductive type semiconductor collector electrode shorting region 9 of collector structure and heavy doping first conductive type semiconductor collector region 11, the front, light dope second conductive type semiconductor drift region 7 of drift region structure contacts with the first conductive type semiconductor tagma 4 of emitter structure, and the heavy doping second conductive type semiconductor collector electrode shorting region 9 of collector structure is positioned at immediately below the first conductive type semiconductor tagma 4 of emitter structure, the polygate electrodes 5 of described grid structure and metal emitting 1, between conductive type semiconductor tagma 4, heavy doping second conductive type semiconductor emitter region 3, first and light dope second conductive type semiconductor drift region 7 four across gate oxide 6.The material of described heavy doping first conductive type semiconductor collector region 11 adopts the mixed crystal material of content gradually variational, form the energy gap of gradual change, and the gradual manner of energy gap is: point near the direction of metal collector 12 side near side, light dope second conductive type semiconductor drift region 7 in heavy doping first conductive type semiconductor collector region 11, the energy gap of mixed crystal material is by increasing gradually.
Operation principle of the present invention:
For explaining operation principle of the present invention, with the first conductive type semiconductor material for P type Si material, becoming component mixed crystal (i.e. heavy doping first conductive type semiconductor collector region 11) material is germanium silicon (Si
xge
1-x, 0<x<1) IGBT device be that example is described.Fig. 4 .1 is the P+ collector region of conventional silicon (Si) material IGBT and the band structure of N-drift region, its collector region I and drift region III has identical energy gap, potential barrier is formed, the barrier height qV overcome needed for injection drift region, the hole III in the I of collector region in the II of space charge region
2with the barrier height qV overcome needed for the electron injection collector region I in the III of drift region
1equal, injection efficiency determines primarily of the doping content (or square resistance) of collector region I and drift region III.Fig. 4 .2 is that P+ collector region I adopts low energy gap width material, and N-drift region III adopts the energy band diagram of Si material, can find out electronic barrier height qV
1reduce, Built-in potential reduces, the easier forward conduction of PN junction, and this is favourable for weakening snap-back effect; But electronic barrier height qV
1reduce to make drift region III be more prone to the electron injection of collector region I simultaneously, thus reduces the injection efficiency of collector junction, reduces conductivity modulation effect, and increase IGBT forward conduction voltage drop, this is disadvantageous to the work of IGBT.This patent adopts the Si and low-gap semiconductor formation mixed crystal that become component, be pure Ge at metallurgical junction place material component, increase gradually from metallurgical junction to the content of Si on I direction, collector region, just define the band structure as shown in Fig. 4 .3, therefore, PN junction barrier height reduces, and distance metallurgical junction is far away, in mixed crystal, Si content increases, and energy gap broadens gradually.If establish uniform doping in whole mixed crystal, then collector region I side top of valence band E
v1should all the time with Fermi level E
fkeeping parallelism, because Fermi level E
fall the time level, so top of valence band E
v1also be level, so energy gap broadens gradually be mainly reflected in E at the bottom of conduction band
c1change on, E at the bottom of conduction band
c1upwarp gradually (being only signal in figure, not necessarily even variation) from metallurgical junction to I side, collector region, the change that can be with means that collector region I exists Built-in field E.According to the band theory of semiconductor, this Built-in field direction is that higher position is pointed in position lower in energy band diagram, namely collector region I ohmic contact is pointed to by metallurgical junction, this electric field E plays decelerating effect to the few sub-electronics of collector region I, inhibit the electronics of drift region III to the injection of collector region I, thus can offset due to electronic barrier height qV
1reduce the impact of the electron injection enhancement caused, the injection efficiency of collector junction is remained unchanged and even increases.If regulate doping and component to make PN junction barrier height enough low, and collector region I forms enough large Built-in field E, the forward conduction voltage drop of RC-IGBT just can be reduced while weakening snap-back phenomenon.
Further, in inverse conductivity type IGBT device provided by the invention, heavy doping second conductive type semiconductor collector electrode shorting region 9 can adopt the mixed crystal material of the content gradually variational identical with heavy doping first conductive type semiconductor collector region 11, also can adopt the semi-conducting material not identical with heavy doping first conductive type semiconductor collector region 11.
Further, in inverse conductivity type IGBT device provided by the invention, the mixed crystal material of described content gradually variational is two or more combination arbitrarily in semi-conducting material in silicon, carborundum, GaAs, indium phosphide or germanium five.
Further, inverse conductivity type IGBT device provided by the invention can adopt the semi-conducting material manufacturings such as body silicon, carborundum, GaAs, indium phosphide or germanium silicon.
Further, inverse conductivity type IGBT device provided by the invention, wherein said grid structure can be planar gate structure or slot grid structure; Described collector structure can be transparent anode structure or short circuit anode construction; Described drift region structure can be punch or non-punch drift region structure.
Beneficial effect of the present invention shows:
The present invention is on conventional RC-IGBT architecture basics, propose to adopt the mixed crystal of content gradually variational to manufacture the collector region at the back side, the PN junction depletion region barrier height at the back side is reduced, simultaneously by the introducing of collector region built-in field, add the injection efficiency of collector region to drift region, while the snap-back phenomenon weakening RC-IGBT, reduce the forward conduction voltage drop of RC-IGBT, optimize reliability and the forward conduction characteristic of RC-IGBT.
Accompanying drawing explanation
Fig. 1 is the structure cell schematic diagram of conventional RC-IGBT device, and wherein 13 is the P-i-N fly-wheel diode introduced, and 14 is the electronic current under low collector voltage, and 15 is transverse electric current path resistances.
Fig. 2 is current-voltage (I-V) performance plot of the RC-IGBT device that conventional RC-IGBT device and the present invention propose: curve 1 is the work I-V characteristic of conventional RC-IGBT; The I-V characteristic of the RC-IGBT device that curve 2 proposes for the present invention.
Fig. 3 is the structure cell schematic diagram of the RC-IGBT device that the present invention proposes, wherein the material of heavy doping first conductive type semiconductor collector region 11 adopts the mixed crystal material of content gradually variational, form the energy gap of gradual change, and the gradual manner of energy gap is: point near the direction of metal collector 12 side near side, light dope second conductive type semiconductor drift region 7 in heavy doping first conductive type semiconductor collector region 11, the energy gap of mixed crystal material is by increasing gradually.
Fig. 4 is the P+ collector region of RC-IGBT device that proposes of conventional RC-IGBT device and the present invention and the PN junction band structure figure of N-drift region:
Fig. 4 .1 is the PN junction band structure figure of P+ collector region I and N-drift region III in conventional IGBT device, and wherein P+ collector region I and N-drift region III is Si material, and II is barrier region;
Fig. 4 .2 is the PN junction band structure that P+ collector region I and N-drift region III are formed, and wherein N-drift region III is Si material, and P+ collector region I adopts small gap material, and be homogenous material or the constant mixed crystal material of component, II is barrier region;
Fig. 4 .3 is the PN junction band structure that in the RC-IGBT device that proposes of the present invention, P+ collector region I and N-drift region III is formed, wherein N-drift region III is Si material, the mixed crystal material that P+ collector region I adopts change component silicon and small gap material to be formed, II is barrier region.
Fig. 5 is the instantiation of a kind of RC-IGBT structure according to principle of the invention proposition, adopts groove grid IGBT structure, add N-type electric field trapping layer 8 below drift region in this example.
Embodiment
Below with the first conductive type semiconductor material for P type semiconductor material, the second conductive type semiconductor material is N type semiconductor material is example, conducts further description RC-IGBT device provided by the invention.
A kind of inverse conductivity type IGBT device, its structure as shown in Figure 5, comprises emitter structure, collector structure, grid structure and drift region structure; Described emitter structure comprises metal emitting 1, P+ ohmic contact regions 2, N+ emitter region 3 and P type tagma 4, wherein P+ ohmic contact regions 2 and N+ emitter region 3 are arranged in P type tagma 4 independently of each other, and the surface of P+ ohmic contact regions 2 and N+ emitter region 3 all contacts with metal emitting 1; Described collector structure comprises P+ collector region 11, N+ collector electrode shorting region 9 and metal collector 12, and wherein N+ collector electrode shorting region 9 and P+ collector region 11 are spaced apart from each other, and the lower surface of the two all contacts with metal collector 12; Described drift region structure comprises N-drift region 7, and has electric field trapping layer 8 bottom N-drift region 7; Described grid structure is slot grid structure, comprises polygate electrodes 5 and gate oxide 6; Described drift region structure is between described emitter structure and described collector structure, wherein: electric field trapping layer 8 back side of drift region structure contacts with the N+ collector electrode shorting region 9 of collector structure and P+ collector region 11, the front, N-drift region 7 of drift region structure contacts with the P type tagma 4 of emitter structure, and N+ collector electrode shorting region 9 is positioned at immediately below the P type tagma 4 of emitter structure; The polygate electrodes 5 of described grid structure and metal emitting 1, N+ emitter region 3, between P type tagma 4 and N-drift region 7 four across gate oxide 6.The material of described heavy doping P+ collector region 11 adopts the mixed crystal material Si of content gradually variational
xge
1-xand 0<x<1, form the energy gap of gradual change, and the gradual manner of energy gap is: point near the direction of metal collector 12 side near side, N-drift region 7 in P+ collector region 11, the energy gap of mixed crystal material is by increasing gradually (such as: the metallurgical junction place x=0 in P+ collector region 11 with N-drift region 7, at P+ collector region 11 and metal collector 12 intersection x=1).The process implementation method of P+ collector region 11 is: adopt Chemical Vapor-Phase Epitaxy technology, constantly regulates mist atmosphere, to be met the epitaxial loayer component of requirement in epitaxial process.
Described device processes can continue to use traditional slot grid IGBT technical process, and only need increase a step, detailed process step is as follows:
(1) monocrystalline silicon prepares, and adopts N-type light dope backing material as IGBT drift region;
(2) by the certain thickness mixed crystal of vapor phase epitaxy method extension, in vapour phase epitaxy process, constantly gas component is changed, to form the gradual extension mixed crystal of component;
(3) back side phosphorus injects, and forms barrier layer, N-type field, anneals and push away trap;
(4) subsequent technique is identical with conventional groove grid IGBT, and processing step comprises: front boron injects, and forms P type base, anneals and push away trap; Carry out groove etched, gate oxidation and gate polycrystalline silicon deposit; N+ emitter region is injected and is pushed away trap; P+ ohmic contact is injected and is pushed away trap; P+ district, the back side injects and pushes away trap, the fine and close and lithography fair lead of deposit passivation layer, annealing, depositing metal, anti-carves the steps such as metal, passivation, photoetching passivation hole.
As the case may be, when basic structure is constant, certain accommodation design can be carried out in implementation process, such as:
(1) P+ collector region adopts mixed crystal material Si
xge
1-x, the Changing Pattern of x can adjust as requested, gets any real number between 0 to 1.
(2) P+ collector region mixed crystal material also can be other and realizes by semiconductor technology and have the material of band structure of the present invention, as: GaAs, AlGaAs, GaN, SiC etc.
(3) gate electrode of IGBT can be planar gate, also can be trench gate or notched gates.
(4) drift region structure of IGBT can be punch, also can be non-punch.
(5) Facad structure of IGBT can adopt charge carrier storage organization (CSTBT) etc.
Claims (8)
1. an inverse conductivity type IGBT device, comprises emitter structure, collector structure, grid structure and drift region structure, described emitter structure comprises metal emitting (1), heavy doping first conductive type semiconductor ohmic contact regions (2), heavy doping second conductive type semiconductor emitter region (3) and the first conductive type semiconductor tagma (4), wherein heavy doping first conductive type semiconductor ohmic contact regions (2) and heavy doping second conductive type semiconductor emitter region (3) are arranged in the first conductive type semiconductor tagma (4) independently of each other, and the surface of heavy doping first conductive type semiconductor ohmic contact regions (2) and heavy doping second conductive type semiconductor emitter region (3) all contacts with metal emitting (1), described collector structure comprises heavy doping first conductive type semiconductor collector region (11), heavy doping second conductive type semiconductor collector electrode shorting region (9) and metal collector (12), wherein heavy doping second conductive type semiconductor collector electrode shorting region (9) and heavy doping first conductive type semiconductor collector region (11) are spaced apart from each other, and the lower surface of the two all contacts with metal collector (12), described drift region structure comprises light dope second conductive type semiconductor drift region (7), described grid structure comprises polygate electrodes (5) and gate oxide (6),
Described drift region structure is between described emitter structure and described collector structure, wherein: light dope second conductive type semiconductor drift region (7) back side of drift region structure contacts with heavy doping second conductive type semiconductor collector electrode shorting region (9) of collector structure and heavy doping first conductive type semiconductor collector region (11), light dope second conductive type semiconductor drift region (7) front of drift region structure contacts with the first conductive type semiconductor tagma (4) of emitter structure, and heavy doping second conductive type semiconductor collector electrode shorting region (9) of collector structure is positioned at immediately below the first conductive type semiconductor tagma (4) of emitter structure, the polygate electrodes (5) of described grid structure and metal emitting (1), heavy doping second conductive type semiconductor emitter region (3), between the first conductive type semiconductor tagma (4) and light dope second conductive type semiconductor drift region (7) four across gate oxide (6),
The material of described heavy doping first conductive type semiconductor collector region (11) adopts the mixed crystal material of content gradually variational, form the energy gap of gradual change, and the gradual manner of energy gap is: point near the direction of metal collector (12) side near light dope second conductive type semiconductor drift region (7) side in heavy doping first conductive type semiconductor collector region (11), the energy gap of mixed crystal material is by increasing gradually.
2. inverse conductivity type IGBT device according to claim 1, it is characterized in that, described heavy doping second conductive type semiconductor collector electrode shorting region (9) adopts the mixed crystal material of the content gradually variational identical with heavy doping first conductive type semiconductor collector region (11), or adopts the semi-conducting material not identical with heavy doping first conductive type semiconductor collector region (11).
3. inverse conductivity type IGBT device according to claim 1 and 2, is characterized in that, the mixed crystal material of described content gradually variational is in silicon, carborundum, GaAs, indium phosphide or germanium five kinds of semi-conducting materials any two kinds.
4. inverse conductivity type IGBT device according to claim 1 and 2, it is characterized in that, the mixed crystal material of described content gradually variational is combination multiple arbitrarily in silicon, carborundum, GaAs, indium phosphide or germanium five kinds of semi-conducting materials.
5. inverse conductivity type IGBT device according to claim 1 and 2, is characterized in that, described inverse conductivity type IGBT device adopts body silicon, carborundum, GaAs, indium phosphide or germanium silicon semiconductor material to make.
6. inverse conductivity type IGBT device according to claim 1 and 2, it is characterized in that, described grid structure is planar gate structure or slot grid structure.
7. inverse conductivity type IGBT device according to claim 1 and 2, it is characterized in that, described collector structure is transparent anode structure or short circuit anode construction.
8. inverse conductivity type IGBT device according to claim 1 and 2, it is characterized in that, described drift region structure is punch or non-punch drift region structure.
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| CN106252399B (en) * | 2016-08-31 | 2019-03-29 | 电子科技大学 | A kind of inverse conductivity type IGBT |
| CN106449743A (en) * | 2016-11-04 | 2017-02-22 | 株洲中车时代电气股份有限公司 | Insulated gate bipolar transistor and manufacturing method thereof |
| CN107425062A (en) * | 2017-08-17 | 2017-12-01 | 电子科技大学 | A kind of grid-controlled transistor device for improving Surge handling capability |
| CN108155230B (en) * | 2017-12-25 | 2021-02-12 | 电子科技大学 | Transverse RC-IGBT device and preparation method thereof |
| CN108572306B (en) * | 2018-04-04 | 2020-05-22 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Thermal resistance testing circuit and method of reverse conducting IGBT |
| CN113990923B (en) * | 2021-10-20 | 2023-04-04 | 电子科技大学 | Silicon carbide double-groove MOSFET (Metal-oxide-semiconductor field Effect transistor) integrated with trench diode |
| CN114784087B (en) * | 2022-03-28 | 2024-06-18 | 重庆大学 | Floating buffer layer trench collector reverse conduction type insulated gate bipolar transistor |
| CN117577675B (en) * | 2024-01-15 | 2024-04-12 | 汉轩微电子制造(江苏)有限公司 | IGBT device embedded with FRD and manufacturing method thereof |
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