CN103383938A - Groove type power metal oxide semiconductor (MOS) device contact hole resistance detection structure - Google Patents
Groove type power metal oxide semiconductor (MOS) device contact hole resistance detection structure Download PDFInfo
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Abstract
The invention provides a groove type power metal oxide semiconductor (MOS) device contact hole resistance detection structure which is a four-end detection structure. A deep groove grid formed in a deep groove is added between a first contact hole and a second contact hole of each detection unit, the deep groove is located in a source region and a body region between the first contact hole and the second contact hole of each detection unit in a penetrating mode and extends to an epitaxial layer below the body region. During detection, corresponding voltage is provided for each contact hole, the deep groove grid and a crystal back common port, so that the source region, the body region and the epitaxial layer around the deep groove form a groove charge layer on the surface of a gate medium layer, detecting current is forced to enter the body region from the lower portion and the bottom of the first contact hole or flow out of the body region from the lower portion and the bottom of the second contact hole, and whether the contact performance between the lower portion and the bottom of the first contact hole of the detecting current flow-out end or the second contact hole of the detecting current flow-in end and the body region is good is tested conveniently, simply and effectively.
Description
Technical field
Semiconductor device of the present invention relates to a kind of MOS device contacts hole resistance detection structure, relates in particular to a kind of groove-type power MOS device contacts hole resistance detection structure.
Background technology
Groove-type power MOS device is the vertical device of a kind of list of extensive use, and wherein, contact hole technique is the committed step of preparation groove-type power MOS device.For groove-type power MOS device, the contact hole technique that it generally adopts is to penetrate the shallow trench contact hole that the source region arrives the tagma, so that tagma and source region keep equipotential, therefore, whether contact hole is well most important with contacting of tagma and source region.When drift occurs in the contact hole operational characteristic, tend to cause contact hole bottom and bottom and tagma loose contact, can cause puncture voltage to diminish, leak electricity when serious and become large, EAS(Single pulse avalanche energy, pulse avalanche breakdown energy) lost efficacy etc., this is a main cause of groove-type power MOS component failure.
At present, detecting groove-type power MOS device contacts hole and tagma, whether to contact good detection architecture similar to the detection architecture of CMOS, is also employing Rc chain(contact hole resistance chain) or Kelvin Rc structure.But whether these detection architecture contact well with the tagma with the bottom because the special contact hole structure of groove-type power MOS device is difficult to really detect the contact hole bottom.
Take N-type groove-type power MOS device as example, Fig. 1 is the generalized section of traditional Rc chain detection architecture, and Fig. 2 is the domain structure of this Rc chain detection architecture.As shown in Figure 1, be formed with successively from the bottom to top P type tagma 102 and N+ type source region 103 at N-type epitaxial loayer 101 tops, be formed with interlayer dielectric 104 on described N-type epitaxial loayer 101, run through described interlayer dielectric 104 and N+ type source region 103 and extend to the contact hole 105 at 102 tops, P type tagma, and the corresponding metal level 106 of this contact hole respectively that connects is to form Rc chain detection architecture, wherein, the bottom of described contact hole 105 and bottom are positioned at 102 tops, described tagma; Traditional Rc chain detection architecture is three end detection architecture, and provide corresponding voltage by this three end for described Rc chain detection architecture, wherein, demonstrate the pad 107 that connects described Rc chain detection architecture two ends in Fig. 2, simultaneously, also to have brilliant back of the body common port be the 3rd end (Fig. 1 and Fig. 2 are diagram) to described Rc chain detection architecture.Need to prove the also not shown interlayer dielectric 104 that is positioned on epitaxial loayer in Fig. 2.
For traditional Rc chain detection architecture as shown in Figures 1 and 2, in testing process, as shown in Figure 3, metal level 106 and pad 107 on-load voltage V to contact hole 105 correspondences, and the flow through detection electric current I of detection architecture of test, detect the size of electric current I by test with the resistance sizes of judgement contact hole 105, thereby whether draw contact hole 105 good with contacting of source region 103 and tagma 102.But, for described traditional Rc chain detection architecture, when contact hole 105 bottoms and bottom and tagma 102 loose contact, contact with described source region 103 due to contact hole 105 or good, detecting electric current I still can be by contacting the 105 described source regions 102 of flowing through, and do not affect the contact hole resistance value of acquisition, thereby whether the contact performance that can't really detect contact hole 105 bottoms and bottom and tagma 102 is good, wherein, the direction of arrow in Fig. 3 has marked and detected the signal direction that electric current I is flowed through in source region 103.
Therefore, how to facilitate and the contact performance that detects efficiently contact hole 105 bottoms and bottom and tagma 102 becomes problem demanding prompt solution.
Summary of the invention
The shortcoming of prior art in view of the above the object of the present invention is to provide a kind of groove-type power MOS device contacts hole resistance detection structure, is used for solving the problem that prior art can't detect the contact performance in contact hole bottom and bottom and tagma.
Reach for achieving the above object other relevant purposes, the invention provides a kind of groove-type power MOS device contacts hole resistance detection structure, described detection architecture comprises that at least chain connects the detecting unit district that some detecting units are set, and wherein, respectively this detecting unit in described detecting unit district comprises:
Epitaxial loayer is light dope N type semiconductor material;
Interlayer dielectric is formed on described epitaxial loayer;
Metal level is formed on described interlayer dielectric, and corresponding with described detecting unit district;
The tagma is the P type semiconductor material, is positioned at described epitaxial loayer top;
The source region, the doped N-type semi-conducting material of attaching most importance to is positioned at described epitaxial loayer top and is positioned on described tagma;
The first contact hole and the second contact hole, run through successively respectively described interlayer dielectric, source region from top to bottom and extend to top, described tagma, described the first contact hole is connected to the first voltage by its corresponding metal level, described the second contact hole is connected to second voltage by its corresponding metal level, so that the first contact hole is as the contact hole that detects outflow of bus current, the second contact hole is as the contact hole that detects the electric current inflow, and wherein, described the first voltage is higher than second voltage;
Deep trench, run through successively source region and tagma between described the first contact hole and the second contact hole from top to bottom, and extend to the epitaxial loayer that is positioned under described tagma, and described deep trench inwall is formed with gate dielectric layer, and be filled with in described deep trench and the contacted deep trench grid of described gate dielectric layer, and described deep trench grid loads grid voltage V
g, V
g＜0 and | V
g| | V
T|, wherein, V
TThreshold voltage for the PMOSFET during as the tagma with light dope N type semiconductor material;
Wherein, in described detecting unit district, respectively isolation mutually between the metal level that is connected to the first contact hole and the second contact hole of this detecting unit, respectively the first contact hole of this detecting unit is connected to the second contact hole of another adjacent detecting unit to form the chain connection of detecting unit by its corresponding metal level; Be separated with epitaxial loayer between respectively between the tagma of this detecting unit and respectively between the source region of this detecting unit.
Alternatively, respectively the deep trench grid of this detecting unit is interconnected.
Alternatively, described detection architecture also comprises grid electrical contact district, wherein, described grid electrical contact district comprises epitaxial loayer, interlayer dielectric and metal level, and wherein, described epitaxial loayer is light dope N type semiconductor material, described interlayer dielectric is formed on described epitaxial loayer, described metal level is formed on described interlayer dielectric and is corresponding with described grid electrical contact district, and simultaneously, described grid electrical contact district also comprises:
Wide groove, be formed at described epitaxial loayer top, and described wide trench wall is formed with gate dielectric layer, is filled with in described wide groove and the contacted wide trench-gate of described gate dielectric layer, wherein, respectively this deep trench grid is connected in described wide trench-gate and is interconnected by described wide trench-gate;
The 3rd contact hole runs through described interlayer dielectric and extends to described wide trench-gate, so that respectively this deep trench grid carries out the grid electrical contact by wide trench-gate, the 3rd contact hole and corresponding metal level thereof; Described the 3rd contact hole is connected to described grid voltage V by its corresponding metal level
g
Alternatively, described detection architecture also comprises the 3rd pad in corresponding described grid electrical contact district, and described the 3rd pad is loaded corresponding voltage, and wherein, described the 3rd pad is connected in described wide trench-gate by the 3rd contact hole and corresponding metal level thereof.
Alternatively, the chain described detecting unit district that connects is formed with and lays respectively at first detecting unit and the tail detecting unit that chain is located from beginning to end; Described detection architecture also comprises the first pad and second pad of initial and end detecting unit in corresponding described detecting unit respectively district, and described the first pad and the second pad are loaded corresponding voltage.
Alternatively, described the first pad is connected in the first detecting unit in detecting unit district by the first contact hole and corresponding metal level thereof; Described the second pad is connected in the tail detecting unit in detecting unit district by the second contact hole and corresponding metal level thereof.
Alternatively, be interval between the tagma of this detecting unit respectively and be interval on epitaxial loayer between the source region of this detecting unit respectively and be formed with field oxide.
Alternatively, in described deep trench, part is filled with and the contacted deep trench grid of described gate dielectric layer, and be formed with on described deep trench grid and contacted the first insulating medium layer of described gate dielectric layer, wherein, the upper surface of the opening of the upper surface of described the first insulating medium layer and described deep trench and described epitaxial loayer all is positioned at same plane.
Alternatively, in described wide groove, part is filled with and the contacted wide trench-gate of described gate dielectric layer, and be formed with on described wide trench-gate and contacted the first insulating medium layer of described gate dielectric layer, wherein, the upper surface of the upper surface of described the first insulating medium layer and described wide groove opening and described epitaxial loayer all is positioned at same plane.
Alternatively, described the 3rd contact hole runs through successively described interlayer dielectric, the first insulating medium layer from top to bottom and extends to described wide trench-gate.
The present invention also provides a kind of groove-type power MOS device contacts hole resistance detection structure, and described detection architecture comprises that at least chain connects the detecting unit district that some detecting units are set, and wherein, respectively this detecting unit in described detecting unit district comprises:
Epitaxial loayer is doped with P type semi-conducting material;
Interlayer dielectric is formed on described epitaxial loayer;
Metal level is formed on described interlayer dielectric, and corresponding with described detecting unit district;
The tagma is the N type semiconductor material, is positioned at described epitaxial loayer top;
The source region is heavy doping P type semiconductor material, is positioned at described epitaxial loayer top and is positioned on described tagma;
The first contact hole and the second contact hole, run through successively respectively described interlayer dielectric, source region from top to bottom and extend to top, described tagma, described the first contact hole is connected to the first voltage by its corresponding metal level, described the second contact hole is connected to second voltage by its corresponding metal level, so that the first contact hole is as the contact hole that detects outflow of bus current, the second contact hole is as the contact hole that detects the electric current inflow, and wherein, described the first voltage is higher than second voltage;
Deep trench, run through successively source region and tagma between described the first contact hole and the second contact hole from top to bottom, and extend to the epitaxial loayer that is positioned under described tagma, and described deep trench inwall is formed with gate dielectric layer, and be filled with in described deep trench and the contacted deep trench grid of described gate dielectric layer, and described deep trench grid loads grid voltage V
g, V
g0 and | V
g| | V
T|, wherein, V
TThreshold voltage for the NMOSFET during as the tagma with doped with P type semi-conducting material;
Wherein, in described detecting unit district, respectively isolation mutually between the metal level that is connected to the first contact hole and the second contact hole of this detecting unit, respectively the first contact hole of this detecting unit is connected to the second contact hole of another adjacent detecting unit to form the chain connection of detecting unit by its corresponding metal level; Be separated with epitaxial loayer between respectively between the tagma of this detecting unit and respectively between the source region of this detecting unit.
Alternatively, respectively the deep trench grid of this detecting unit is interconnected.
Alternatively, described detection architecture also comprises grid electrical contact district, wherein, described grid electrical contact district comprises epitaxial loayer, interlayer dielectric and metal level, and wherein, described epitaxial loayer is doped with P type semi-conducting material, described interlayer dielectric is formed on described epitaxial loayer, described metal level is formed on described interlayer dielectric and is corresponding with described grid electrical contact district, and simultaneously, described grid electrical contact district also comprises:
Wide groove, be formed at described epitaxial loayer top, and described wide trench wall is formed with gate dielectric layer, is filled with in described wide groove and the contacted wide trench-gate of described gate dielectric layer, wherein, respectively this deep trench grid is connected in described wide trench-gate and is interconnected by described wide trench-gate;
The 3rd contact hole runs through described interlayer dielectric and extends to described wide trench-gate, so that respectively this deep trench grid carries out the grid electrical contact by wide trench-gate, the 3rd contact hole and corresponding metal level thereof; Described the 3rd contact hole is connected to described grid voltage V by its corresponding metal level
g
Alternatively, described detection architecture also comprises the 3rd pad in corresponding described grid electrical contact district, and described the 3rd pad is loaded corresponding voltage, and wherein, described the 3rd pad is connected in described wide trench-gate by the 3rd contact hole and corresponding metal level thereof.
Alternatively, the chain described detecting unit district that connects is formed with and lays respectively at first detecting unit and the tail detecting unit that chain is located from beginning to end; Described detection architecture also comprises the first pad and second pad of initial and end detecting unit in corresponding described detecting unit respectively district, and described the first pad and the second pad are loaded corresponding voltage.
Alternatively, described the first pad is connected in the first detecting unit in detecting unit district by the first contact hole and corresponding metal level thereof; Described the second pad is connected in the tail detecting unit in detecting unit district by the second contact hole and corresponding metal level thereof.
Alternatively, be interval between the tagma of this detecting unit respectively and be interval on epitaxial loayer between the source region of this detecting unit respectively and be formed with field oxide.
Alternatively, in described deep trench, part is filled with and the contacted deep trench grid of described gate dielectric layer, and be formed with on described deep trench grid and contacted the first insulating medium layer of described gate dielectric layer, wherein, the upper surface of the opening of the upper surface of described the first insulating medium layer and described deep trench and described epitaxial loayer all is positioned at same plane.
Alternatively, in described wide groove, part is filled with and the contacted wide trench-gate of described gate dielectric layer, and be formed with on described wide trench-gate and contacted the first insulating medium layer of described gate dielectric layer, wherein, the upper surface of the upper surface of described the first insulating medium layer and described wide groove opening and described epitaxial loayer all is positioned at same plane.
Alternatively, described the 3rd contact hole runs through successively described interlayer dielectric, the first insulating medium layer from top to bottom and extends to described wide trench-gate.
As mentioned above, groove-type power MOS device contacts of the present invention hole resistance detection structure, has following beneficial effect: the detection architecture that forms four ends of the present invention by improving traditional Rc chain detection architecture, particularly, increase by a deep trench grid in being formed at deep trench between the first contact hole of this detecting unit respectively and the second contact hole, described deep trench runs through in the first contact hole and source region and the tagma between the second contact hole of this detecting unit respectively and extends to the epitaxial loayer that is positioned under described tagma.In testing process, provide corresponding voltage to respectively this contact hole of invention detection architecture, deep trench grid and brilliant this four end of back of the body common port respectively, thereby make source region, tagma and epitaxial loayer around deep trench of the present invention electrically change to form the channel charge layer on the gate dielectric layer surface of deep trench.Wherein, a kind of situation is for forcing the detection electric current to enter described tagma in the first contact hole bottom and bottom, and flow to the second contact hole by the passage of described channel charge layer formation detection electric current, and then whether the contact performance in the bottom of the first convenient, as simply and effectively to test detection outflow of bus current end contact hole and bottom and tagma is good; Another kind of situation can only flow out the tagma in the second contact hole bottom and bottom for the passage that detects electric current by the formation of channel charge layer forces the detection electric current, and then whether the contact performance in convenient, as simply and effectively to test the second contact hole that detects electric current inflow end bottom and bottom and tagma is good.
Description of drawings
Fig. 1 is shown as the generalized section of Rc chain detection architecture in prior art.
Fig. 2 is shown as the domain structure of Rc chain detection architecture in prior art.
Fig. 3 is shown as Rc chain detection architecture in prior art detects electric current I in testing process the schematic diagram of flowing through.
Fig. 4 is shown as the cross-sectional view of groove-type power MOS device contacts of the present invention hole resistance detection structure in embodiment one.
Fig. 5 is shown as the domain structure of groove-type power MOS device contacts of the present invention hole resistance detection structure.
Fig. 6 is shown as the cross-sectional view of detecting unit in embodiment one of groove-type power MOS device contacts of the present invention hole resistance detection structure, and wherein, Fig. 6 has also shown the direction of flowing through that detects electric current I.
Fig. 7 is shown as the cross-sectional view of groove-type power MOS device contacts of the present invention hole resistance detection structure in embodiment two.
Fig. 8 is shown as the cross-sectional view of detecting unit in embodiment two of groove-type power MOS device contacts of the present invention hole resistance detection structure, and wherein, Fig. 8 has also shown the direction of flowing through that detects electric current I.
The element numbers explanation
101,201 epitaxial loayers
102,202 tagmas
103,203 source regions
104,204 interlayer dielectric
105 contact holes
106,206 metal levels
107 pads
2,051 first contact holes
2,052 second contact holes
2053 the 3rd contact holes
2,071 first pads
2,072 second pads
2073 the 3rd pads
208 deep trench
209. gate dielectric layer
210 deep trench grids
211 field oxides
212 first insulating medium layers
228 wide grooves
220 wide trench-gates
The first detecting unit of A
B tail detecting unit
C channel charge layer
I detects electric current
The Vg grid voltage
Embodiment
Below by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the disclosed content of this specification.The present invention can also be implemented or be used by other different embodiment, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications or change under spirit of the present invention not deviating from.
See also Fig. 4 to Fig. 8.Need to prove, the diagram that provides in following specific embodiment only illustrates basic conception of the present invention in a schematic way, satisfy only show in graphic with the present invention in relevant assembly but not component count, shape and size drafting when implementing according to reality, during its actual enforcement, kenel, quantity and the ratio of each assembly can be a kind of random change, and its assembly layout kenel also may be more complicated.
For described traditional Rc chain detection architecture, metal level and the pad on-load voltage V corresponding to contact hole, and the flow through detection electric current I of detection architecture of test, detect the size of electric current I by test with the resistance sizes of judgement contact hole, thereby whether draw contact hole good with contacting of source region and tagma.But, when contact hole bottom and bottom and tagma loose contact, contact with described source region due to contact hole or good, detecting electric current I still can be by the contact described source region of flowing through, and do not affect the contact hole resistance value of acquisition, thereby whether the contact performance that can't really detect contact hole bottom and bottom and tagma is good, therefore, how to facilitate and the contact performance that detects efficiently contact hole bottom and bottom and tagma becomes problem demanding prompt solution.
In view of this, the invention provides a kind of groove-type power MOS device contacts hole resistance detection structure, form the detection architecture of four ends of the present invention by improving traditional Rc chain detection architecture, particularly, increase by a deep trench grid in being formed at deep trench between the first contact hole of this detecting unit respectively and the second contact hole, described deep trench runs through in the first contact hole and source region and the tagma between the second contact hole of this detecting unit respectively and extends to the epitaxial loayer that is positioned under described tagma.In testing process, provide corresponding voltage to respectively this contact hole of invention detection architecture, deep trench grid and brilliant this four end of back of the body common port respectively, thereby make source region, tagma and epitaxial loayer around deep trench of the present invention electrically change to form the channel charge layer on the gate dielectric layer surface of deep trench.Wherein, a kind of situation is for forcing the detection electric current to enter described tagma in the first contact hole bottom and bottom, and flow to the second contact hole by the passage of described channel charge layer formation detection electric current, and then whether the contact performance in the bottom of the first convenient, as simply and effectively to test detection outflow of bus current end contact hole and bottom and tagma is good; Another kind of situation can only flow out the tagma in the second contact hole bottom and bottom for the passage that detects electric current by the formation of channel charge layer forces the detection electric current, and then whether the contact performance in convenient, as simply and effectively to test the second contact hole that detects electric current inflow end bottom and bottom and tagma is good.
Below will elaborate principle and the execution mode of groove-type power MOS device contacts of the present invention hole resistance detection structure, and make those skilled in the art not need creative work can understand groove-type power MOS device contacts of the present invention hole resistance detection structure.
Embodiment one
As extremely shown in Figure 6 in Fig. 4, the invention provides a kind of groove-type power MOS device contacts hole resistance detection structure, be used for the contact hole resistance that test detects the outflow of bus current end, detect the contact hole of outflow of bus current end and the contact performance in source region and tagma with judgement, described detection architecture comprises that at least chain connects the detecting unit district that some detecting units are set, but be not limited to this, described detection architecture also comprises grid electrical contact district.
In the present embodiment, as Fig. 4 and shown in Figure 5, described detection architecture comprises described detecting unit district and grid electrical contact district, and described detecting unit district and grid electrical contact district include light dope N-type (N-type) semi-conducting material epitaxial loayer 201, be formed at interlayer dielectric 204 on described epitaxial loayer 201, be formed at metal level 206 corresponding with described detecting unit district and grid electrical contact district on described interlayer dielectric 204.Wherein, described semi-conducting material comprises any one or the arbitrarily several combination in silicon, germanium, germanium silicon and three or five family's semi-conducting materials, and wherein said three or five family's semi-conducting materials comprise GaAs or gallium nitride etc., preferred silicon in the present embodiment; Described interlayer dielectric 204 comprises any one or the arbitrarily several combination in silicon dioxide, silicon nitride, silicon oxynitride, preferred silicon dioxide in the present embodiment; Described metal level 206 comprises any one or the arbitrarily several combination in aluminium, copper, aluminum bronze, aluminium copper silicon, tungsten, titanium, preferred aluminum bronze in the present embodiment.
Respectively this detecting unit in described detecting unit district also comprises tagma 202, source region 203, the first contact hole 2051 and the second contact hole 2052, deep trench 208, gate dielectric layer 209, reaches deep trench grid 210; Further, respectively this detecting unit also comprises field oxide 211 and/or the first insulating medium layer 212; Further, respectively this detecting unit also comprises the first pad 2071 and the second pad 2072; Described grid electrical contact district also comprises wide groove 228, gate dielectric layer 209, wide trench-gate 220 and the 3rd contact hole 2053; Further, described grid electrical contact district also comprises the first insulating medium layer 212; Further, described grid electrical contact district also comprises the 3rd pad 2073.
In the present embodiment, to shown in Figure 6, described respectively this detecting unit also comprises tagma 202, source region 203, the first contact hole 2051 and the second contact hole 2052, deep trench 208, gate dielectric layer 209, deep trench grid 210, field oxide 211, the first insulating medium layer 212, the first pad 2071 and the second pad 2072 as Fig. 4; Described grid electrical contact district also comprises wide groove 228, gate dielectric layer 209., wide trench-gate 220, the 3rd contact hole 2053, the first insulating medium layer 212 and the 3rd pad 2073.Thereby, detection architecture of the present invention is a kind of four end test structures that are different from the Rc chain detection architecture of three traditional ends, wherein, four ends are respectively the first pad 2071, the second pad 2072 and the 3rd pad 2073 that has shown in Fig. 5, and the crystalline substance that does not show in Fig. 5 back of the body common port.
Need to prove the not shown interlayer dielectric 204 that is positioned on epitaxial loayer 201 in Fig. 5, and not shown described deep trench grid 210 and corresponding the first insulating medium layer 212 of wide trench-gate 220 and gate dielectric layer 209.Simultaneously, as can be seen from Figure 5, on the longitudinal direction in Fig. 5, respectively in this detecting unit, the edge of described deep trench grid 210 is outside the edge in described source region 203; But in grid electrical contact district, on the longitudinal direction in Fig. 5, the edge one that does not limit described wide trench-gate 220 fixes on outside the edge in described source region 203, and concrete reason and principle see below in continuous operation principle and describe in detail.
As extremely shown in Figure 6 in Fig. 4, in described detecting unit:
See also Fig. 4 and Fig. 6, described tagma 202 is the P type semiconductor material, and described tagma 202 is positioned at described epitaxial loayer 201 tops, wherein, described semi-conducting material comprises a kind of or combination in silicon, germanium, germanium-silicon alloy and three or five family's semi-conducting materials (as GaAs, gallium nitride etc.), preferred silicon in the present embodiment.
See also Fig. 4 and Fig. 6, described source region 203 doped N-type (N+ type) semi-conducting material of attaching most importance to, be positioned at described epitaxial loayer 201 tops and be positioned on described tagma 202, wherein, described semi-conducting material comprises any one or the arbitrarily several combination in silicon, germanium, germanium silicon and three or five family's semi-conducting materials, wherein said three or five family's semi-conducting materials comprise GaAs or gallium nitride etc., preferred silicon in the present embodiment.
need to prove, in the present embodiment, be interval between the tagma 202 of this detecting unit respectively and be interval on epitaxial loayer 201 between the source region 203 of this detecting unit respectively and also be formed with field oxide (Field Oxide, FOX) 211, with in the ion implantation process in the tagma for preparing detection architecture and source region, described field oxide 211 plays the effect of injecting in epitaxial loayer 201 place's blocks ions at this interval, but be not limited to this, in another embodiment, inject in epitaxial loayer 201 place's blocks ions at this interval and can also adopt photoresist, thereby also can not form field oxide 211 on the epitaxial loayer at this interval 201.
See also Fig. 4 and Fig. 6, described the first contact hole 2051 and the second contact hole 2052, run through successively respectively described interlayer dielectric 204, source region 203 from top to bottom and extend to 202 tops, described tagma, wherein, the bottom of the first contact hole 2051 and the second contact hole 2052 and bottom all are positioned at 202 tops, described tagma; Described the first contact hole 2051 is connected to the first voltage by its corresponding metal level 206, described the second contact hole 2052 is connected to second voltage by its corresponding metal level 206, so that the first contact hole 2051 is as the contact hole that detects outflow of bus current, the second contact hole 2052 is as the contact hole that detects the electric current inflow, wherein, described the first voltage is higher than second voltage.
See also Fig. 4 and Fig. 6, described deep trench 208 runs through source region 203 and the tagma 202 between described the first contact hole 2051 and the second contact hole 2052 from top to bottom successively, and extend to the epitaxial loayer 201 that is positioned under described tagma 202, and described deep trench 208 inwalls are formed with gate dielectric layer 209, and be filled with in described deep trench 208 and the contacted deep trench grid 210 of described gate dielectric layer 209, and described deep trench grid 210 loads grid voltage V
g, V
g＜0 and | V
g| | V
T|, wherein, V
TThreshold voltage for the PMOSFET during as the tagma with light dope N-type (N-) semi-conducting material, described semi-conducting material comprises any one or the arbitrarily several combination in silicon, germanium, germanium silicon and three or five family's semi-conducting materials, wherein said three or five family's semi-conducting materials comprise GaAs or gallium nitride etc., preferred silicon in the present embodiment.
Need to prove, in the present embodiment, in described deep trench 208, part is filled with and the contacted deep trench grid 210 of described gate dielectric layer 209, and be formed with on described deep trench grid 210 and contacted the first insulating medium layer 212 of described gate dielectric layer 209, wherein, the upper surface of the opening of the upper surface of described the first insulating medium layer 212 and described deep trench 208 and described epitaxial loayer 201 all is positioned at same plane.But be not limited to this, in another embodiment, the upper surface of described deep trench grid 210 also can all be positioned at same plane with the opening of described deep trench 208 and the upper surface of described epitaxial loayer 201, at this moment, does not fill described the first insulating medium layer 212 in described deep trench 208.
It is to be noted, in described detecting unit district, respectively isolation mutually between the metal level 206 that is connected to the first contact hole 2051 and the second contact hole 2052 of this detecting unit, respectively the first contact hole 2051 of this detecting unit is connected to the second contact hole 2052 of another adjacent detecting unit to form the chain connection of detecting unit by its corresponding metal level 206; Further, be separated with epitaxial loayer 201 between respectively between the tagma 202 of this detecting unit and respectively between the source region 203 of this detecting unit.
Need to prove, in the present embodiment, respectively the deep trench grid 210 of this detecting unit is interconnected, but also not shown in Fig. 4 to Fig. 6, due to the common practise that this content is well known to those skilled in the art, gives unnecessary details no longer one by one at this.
As shown in dotted line frame in Fig. 5, in chain connects described detecting unit district, be formed with and lay respectively at first detecting unit A and the tail detecting unit B that chain is located from beginning to end; Described detection architecture also comprises the first pad 2071 of first detecting unit A in corresponding described detecting unit respectively district, the second pad 2072 of corresponding described tail detecting unit B, wherein, described the first pad 2071 and the second pad 2072 is loaded corresponding voltages.
Particularly, in the present embodiment, to shown in Figure 6, described the first pad 2071 is connected in the first detecting unit A in detecting unit district by the first contact hole 2051 and corresponding metal level 206 thereof as Fig. 4; Described the second pad 2072 is connected in the tail detecting unit B in detecting unit district by the second contact hole 2052 and corresponding metal level 206 thereof.Wherein, described the first contact hole 2051 is connected to the first voltage by its corresponding metal level 206 and the first pad 2071, described the second contact hole 2052 is connected to second voltage by its corresponding metal level 206 and the second pad 2072, so that the first contact hole 2051 is as the contact hole that detects outflow of bus current, the second contact hole 2052 is as the contact hole that detects the electric current inflow, wherein, described the first voltage is higher than second voltage.
As Fig. 4 to shown in Figure 5, in described grid electrical contact district:
See also Fig. 4, described wide groove 228 is formed at described epitaxial loayer 201 tops, and described wide groove 228 inwalls are formed with gate dielectric layer 209, and is filled with in described wide groove 228 and the contacted wide trench-gate 220 of described gate dielectric layer 209; Further, respectively this deep trench grid 210 is connected in described wide trench-gate 220 and is interconnected by described wide trench-gate 220, and in other words, respectively this deep trench grid 210 that is interconnected is connected in described wide trench-gate 220.
See also Fig. 4 and Fig. 5, described the 3rd contact hole 2073 runs through described interlayer dielectric 204 and extends to described wide trench-gate 220, so that respectively this deep trench grid 210 carries out the grid electrical contact by wide trench-gate 220, the 3rd contact hole 2073 and corresponding metal level 206 thereof; Described the 3rd contact hole 2053 is connected to described grid voltage V by its corresponding metal level 206
g, V
g＜0 and | V
g| | V
T|, wherein, V
TThreshold voltage for the PMOSFET during as the tagma with light dope N type semiconductor material.
Need to prove, in the present embodiment, as shown in Figure 4, in described wide groove 228, part is filled with and the contacted wide trench-gate 220 of described gate dielectric layer 209, and be formed with on described wide trench-gate 220 and contacted the first insulating medium layer 212 of described gate dielectric layer 209, wherein, the upper surface of the upper surface of described the first insulating medium layer 212 and described wide groove 228 openings and described epitaxial loayer 201 all is positioned at same plane.But be not limited to this, in another embodiment, the upper surface of described wide trench-gate 220 also can all be positioned at same plane with the opening of described wide groove 228 and the upper surface of described epitaxial loayer 201, at this moment, does not fill described the first insulating medium layer 212 in described wide groove 228.
In the present embodiment, as shown in Figure 4, owing to being formed with the first insulating medium layer 212 on described wide trench-gate 220, therefore, described the 3rd contact hole runs through successively described interlayer dielectric 204, the first insulating medium layer 212 from top to bottom and extends to described wide trench-gate 220.
Further, in the present embodiment, described detection architecture also comprises the 3rd pad 2073 in corresponding described grid electrical contact district, and described the 3rd pad 2073 is loaded corresponding voltage.Particularly, in the present embodiment, described the 3rd pad 2073 is connected in described wide trench-gate 220 by the 3rd contact hole 2053 and corresponding metal level 206 thereof.And then, in the present embodiment, respectively this deep trench grid 210 that is interconnected carries out the grid electrical contact by metal level 206 and the 3rd pad 2073 of wide trench-gate 220, the 3rd contact hole 2073, the 3rd contact hole 2073 correspondences, at this moment, described the 3rd pad 2073 is loaded described grid voltage V
g, V
g＜0 and | V
g| | V
T|, wherein, V
TThreshold voltage for the PMOSFET during as the tagma with light dope N type semiconductor material.
For making those skilled in the art further understand embodiments of the present invention, following take any one detecting unit as example, the operation principle of corresponding detection architecture in the detailed description embodiment of the present invention one:
Fig. 6 is shown as the cross-sectional view of any one detecting unit in embodiment one of groove-type power MOS device contacts of the present invention hole resistance detection structure, and wherein, Fig. 6 has also shown the direction of flowing through that detects electric current I.
In testing process, for any one detecting unit, provide corresponding voltage (not showing respectively this voltage-drop loading situation in Fig. 6) to respectively this contact hole, deep trench grid and brilliant this four end of back of the body common port of this detecting unit respectively, wherein, in the present embodiment, described the first pad 2071 is loaded the first voltage, described the second pad 2072 is loaded second voltage, wherein, described the first voltage loads described grid voltage V higher than second voltage to described the 3rd pad 2073
g, V
g＜0 and | V
g| | V
T|, wherein, V
TThreshold voltage for the PMOSFET during as the tagma with light dope N type semiconductor material; Thereby, the first contact hole 2051 of this detecting unit is connected to the first voltage by its corresponding metal level 206, the second contact hole 2052 of this detecting unit is connected to second voltage by its corresponding metal level 206, wherein, described the first voltage is higher than second voltage, and the deep trench grid 210 of this detecting unit is connected to the grid voltage V of negative voltage
g, the public termination positive voltage of the crystalline substance back of the body of this detecting unit.
After loading above-mentioned respectively this voltage, detect the flow direction of electric current I as shown in Figure 6.
Particularly, after loading above-mentioned respectively this voltage, as shown in Figure 6, make source region 203, tagma 202 and epitaxial loayer 201 electrically the changing on gate dielectric layer 209 surfaces of deep trench 208 around the deep trench 208 of this detecting unit, to form channel charge layer C, wherein, the channel charge layer C that is positioned at 203 places, N+ type source region is depletion type or the weak transoid of N+, that is should the zone be the P-type; The channel charge layer C that is positioned at 202 places, P type tagma is the accumulation type of P, that is should the zone be the P+ type; The channel charge layer C that is positioned at N-type epitaxial loayer 201 places is the strong inversion of N-, that is should the zone be the P+ type; Thereby described channel charge district C is the P type.
it is to be noted, at the first higher contact hole 2051 places of voltage, be the first contact hole 2051 places of outflow of bus current, N+ type source region 203 is anti-PN junctions of characteristic partially with the P type channel charge district C of deep trench grid 210, thereby under conventionally test voltage, detecting electric current I can not be directly pass through in the zone in the N+ type source region 203 of connection the first contact hole 2051, detecting electric current I must pass through through bottom and the bottom of the first contact hole 2051 of being connected with P type tagma 202, thereby can effectively detect the contact performance in bottom and bottom and the tagma 202 of the first contact hole 2051.This is also the reason of edge outside the edge in described source region 203 that necessarily requires described deep trench grid 210, and wherein respectively this edge is edge on longitudinal direction in Fig. 5.
particularly, in the present embodiment, existence due to deep trench grid 210 and channel charge layer C, therefore, detecting electric current I can't be from the source region 203 directly pass through, but force the detection electric current I to enter described tagma 202 in the first contact hole 2051 bottoms and bottom, and the passage that detects electric current by described channel charge layer C formation flows to the second contact hole 2052, to form the flow direction that detects electric current I shown in Fig. 6, and then, when the first contact hole 2051 bottoms and bottom and tagma loose contact, can detect electric current I by this diminishes conveniently, simply and effectively detect, that is the detecting unit of the embodiment of the present invention one can facilitate, whether simply and effectively test detects the contact performance in the bottom of the first contact hole 2051 of electric current I outflow end and bottom and tagma 202 good.
to sum up, by improving traditional Rc chain detection architecture, form the groove-type power MOS device contacts hole resistance detection structure of four ends of the present embodiment one, particularly, increase by a deep trench grid in being formed at deep trench between the first contact hole of this detecting unit respectively and the second contact hole, described deep trench runs through in respectively the first contact hole of this detecting unit and source region and the tagma between the second contact hole, and extend to the epitaxial loayer that is positioned under described tagma, and then the detection architecture of the present embodiment one can be facilitated, whether simply and effectively test detects the contact performance in the bottom of the first contact hole of outflow of bus current end and bottom and tagma good.
Embodiment two
The detection architecture of the detection architecture of embodiment two and embodiment one is similar, difference only is the doping type in described epitaxial loayer, tagma, source region, to the situation of described deep trench grid on-load voltage and detected contact hole, only set forth for being different from embodiment one part in embodiment two, all the other something in common see also the specific descriptions of embodiment one, give unnecessary details no longer one by one at this.
As extremely shown in Figure 8 in Fig. 7, the invention provides a kind of groove-type power MOS device contacts hole resistance detection structure, be used for test and detect the contact hole resistance that electric current flows into end, detect electric current with judgement and flow into the contact hole of end and the contact performance in source region and tagma, described detection architecture comprises that at least chain connects the detecting unit district that some detecting units are set, but be not limited to this, described detection architecture also comprises grid electrical contact district.
In the present embodiment, to shown in Figure 8, described detection architecture comprises detecting unit district and grid electrical contact district, and each layer position distribution of detection architecture is identical with the description in embodiment one as Fig. 7, and difference only is:
In the present embodiment, described epitaxial loayer 201 is doped with P type (P-type) semi-conducting material; Described tagma 202 is the N type semiconductor material; Described source region 203 is heavy doping P type (P+ type) semi-conducting material; Described the 3rd pad 2073 is loaded grid voltage V
g, in other words, described deep trench grid 210 loads grid voltage V by wide trench-gate 220, the 3rd contact hole 2073 and corresponding metal level 206 thereof
g, wherein, V
g0 and | V
g| | V
T|, V
TThreshold voltage for the NMOSFET during as the tagma with doped with P type semi-conducting material.
For in the present embodiment for a detecting unit, see also Fig. 8, its operation principle is as follows:
Fig. 8 is shown as the cross-sectional view of any one detecting unit in embodiment two of groove-type power MOS device contacts of the present invention hole resistance detection structure, and wherein, Fig. 8 has also shown the direction of flowing through that detects electric current I.
In the present embodiment, described the first pad 2071 is loaded the first voltage, described the second pad 2072 is loaded second voltage, wherein, described the first voltage loads described grid voltage V higher than second voltage to described the 3rd pad 2073
g, wherein, V
g0 and | V
g| | V
T|, V
TThreshold voltage for the NMOSFET during as the tagma with doped with P type semi-conducting material; Thereby, the first contact hole 2051 of this detecting unit is connected to the first voltage by its corresponding metal level 206, the second contact hole 2052 of this detecting unit is connected to second voltage by its corresponding metal level 206, wherein, described the first voltage is higher than second voltage, and the deep trench grid 210 of this detecting unit is connected to the grid voltage V of positive voltage
g, the public termination negative voltage of the crystalline substance back of the body of this detecting unit.
After loading above-mentioned respectively this voltage, detect the flow direction of electric current I as shown in Figure 8.
Particularly, after loading above-mentioned respectively this voltage, as shown in Figure 8, make source region 203, tagma 202 and epitaxial loayer 201 electrically the changing on gate dielectric layer 209 surfaces of deep trench 208 around the deep trench 208 of this detecting unit, to form channel charge layer C, wherein, the channel charge layer C that is positioned at 203 places, P+ type source region is depletion type or the weak transoid of P+, that is should the zone be the N-type; The channel charge layer C that is positioned at 202 places, N-type tagma is the accumulation type of N, that is should the zone be the N+ type; The channel charge layer C that is positioned at P-type epitaxial loayer 201 places is the strong inversion of P-, that is should the zone be the N+ type; Thereby described channel charge district C is N-type.
it is to be noted, at the second lower contact hole 2052 places of voltage, be the second contact hole 2052 places that electric current flows into, P+ type source region 203 is anti-PN junctions of characteristic partially with the N-type channel charge district C of deep trench grid 210, thereby under conventionally test voltage, detecting electric current I can not be directly pass through in the zone in the P+ type source region 203 of connection the second contact hole 2052, detecting electric current I must pass through through bottom and the bottom of the second contact hole 2052 of being connected with N-type tagma 202, in other words, detect electric current I and can only flow out tagma 202 in the second contact hole 2052 bottoms and bottom, thereby can effectively detect the contact performance in bottom and bottom and the tagma 202 of the second contact hole 2052.This is also the reason of edge outside the edge in described source region 203 that necessarily requires described deep trench grid 210, and wherein respectively this edge is edge on longitudinal direction in Fig. 5.
particularly, in the present embodiment, existence due to deep trench grid 210 and channel charge layer C, therefore, detecting electric current I can't be from the source region 203 directly pass through, but force the detection electric current I to flow out described tagma 202 in the second contact hole 2052 bottoms and bottom, and the passage that detects electric current by described channel charge layer C formation flows out the second contact hole 2052, to form the flow direction that detects electric current I shown in Fig. 8, and then, when the second contact hole 2052 bottoms and bottom and tagma loose contact, can detect electric current I by this diminishes conveniently, simply and effectively detect, that is the detecting unit of the embodiment of the present invention two can facilitate, simply and effectively test detects electric current I whether flow into the contact performance in the bottom of the second contact hole 2052 of end and bottom and tagma 202 good.
In sum, groove-type power MOS device contacts of the present invention hole resistance detection structure, form the detection architecture of four ends of the present invention by improving traditional Rc chain detection architecture, particularly, increase by a deep trench grid in being formed at deep trench between the first contact hole of this detecting unit respectively and the second contact hole, described deep trench runs through in the first contact hole and source region and the tagma between the second contact hole of this detecting unit respectively and extends to the epitaxial loayer that is positioned under described tagma.In testing process, provide corresponding voltage to respectively this contact hole of invention detection architecture, deep trench grid and brilliant this four end of back of the body common port respectively, thereby make source region, tagma and epitaxial loayer around deep trench of the present invention electrically change to form the channel charge layer on the gate dielectric layer surface of deep trench.Wherein, a kind of situation is for forcing the detection electric current to enter described tagma in the first contact hole bottom and bottom, and flow to the second contact hole by the passage of described channel charge layer formation detection electric current, and then whether the contact performance in the bottom of the first convenient, as simply and effectively to test detection outflow of bus current end contact hole and bottom and tagma is good; Another kind of situation can only flow out the tagma in the second contact hole bottom and bottom for the passage that detects electric current by the formation of channel charge layer forces the detection electric current, and then whether the contact performance in convenient, as simply and effectively to test the second contact hole that detects electric current inflow end bottom and bottom and tagma is good.So the present invention has effectively overcome various shortcoming of the prior art and the tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not is used for restriction the present invention.Any person skilled in the art scholar all can under spirit of the present invention and category, modify or change above-described embodiment.Therefore, have in technical field under such as and know that usually the knowledgeable modifies or changes not breaking away from all equivalences of completing under disclosed spirit and technological thought, must be contained by claim of the present invention.
Claims (20)
1. a groove-type power MOS device contacts hole resistance detection structure, is characterized in that, described detection architecture comprises that at least chain connects the detecting unit district that some detecting units are set, and wherein, respectively this detecting unit in described detecting unit district comprises:
Epitaxial loayer is light dope N type semiconductor material;
Interlayer dielectric is formed on described epitaxial loayer;
Metal level is formed on described interlayer dielectric, and corresponding with described detecting unit district;
The tagma is the P type semiconductor material, is positioned at described epitaxial loayer top;
The source region, the doped N-type semi-conducting material of attaching most importance to is positioned at described epitaxial loayer top and is positioned on described tagma;
The first contact hole and the second contact hole, run through successively respectively described interlayer dielectric, source region from top to bottom and extend to top, described tagma, described the first contact hole is connected to the first voltage by its corresponding metal level, described the second contact hole is connected to second voltage by its corresponding metal level, so that the first contact hole is as the contact hole that detects outflow of bus current, the second contact hole is as the contact hole that detects the electric current inflow, and wherein, described the first voltage is higher than second voltage;
Deep trench, run through successively source region and tagma between described the first contact hole and the second contact hole from top to bottom, and extend to the epitaxial loayer that is positioned under described tagma, and described deep trench inwall is formed with gate dielectric layer, and be filled with in described deep trench and the contacted deep trench grid of described gate dielectric layer, and described deep trench grid loads grid voltage V
g, V
g＜0 and | V
g| | V
T|, wherein, V
TThreshold voltage for the PMOSFET during as the tagma with light dope N type semiconductor material;
Wherein, in described detecting unit district, respectively isolation mutually between the metal level that is connected to the first contact hole and the second contact hole of this detecting unit, respectively the first contact hole of this detecting unit is connected to the second contact hole of another adjacent detecting unit to form the chain connection of detecting unit by its corresponding metal level; Be separated with epitaxial loayer between respectively between the tagma of this detecting unit and respectively between the source region of this detecting unit.
2. groove-type power MOS device contacts according to claim 1 hole resistance detection structure, it is characterized in that: respectively the deep trench grid of this detecting unit is interconnected.
3. groove-type power MOS device contacts according to claim 2 hole resistance detection structure, it is characterized in that: described detection architecture also comprises grid electrical contact district, wherein, described grid electrical contact district comprises epitaxial loayer, interlayer dielectric and metal level, wherein, described epitaxial loayer is light dope N type semiconductor material, described interlayer dielectric is formed on described epitaxial loayer, described metal level is formed on described interlayer dielectric and is corresponding with described grid electrical contact district, simultaneously, described grid electrical contact district also comprises:
Wide groove, be formed at described epitaxial loayer top, and described wide trench wall is formed with gate dielectric layer, is filled with in described wide groove and the contacted wide trench-gate of described gate dielectric layer, wherein, respectively this deep trench grid is connected in described wide trench-gate and is interconnected by described wide trench-gate;
The 3rd contact hole runs through described interlayer dielectric and extends to described wide trench-gate, so that respectively this deep trench grid carries out the grid electrical contact by wide trench-gate, the 3rd contact hole and corresponding metal level thereof; Described the 3rd contact hole is connected to described grid voltage V by its corresponding metal level
g
4. groove-type power MOS device contacts according to claim 3 hole resistance detection structure, it is characterized in that: described detection architecture also comprises the 3rd pad in corresponding described grid electrical contact district, and described the 3rd pad is loaded corresponding voltage, wherein, described the 3rd pad is connected in described wide trench-gate by the 3rd contact hole and corresponding metal level thereof.
5. according to claim 1 or 3 described groove-type power MOS device contacts hole resistance detection structures is characterized in that: chain connects described detecting unit district is formed with and lays respectively at first detecting unit and the tail detecting unit that chain is located from beginning to end; Described detection architecture also comprises the first pad and second pad of initial and end detecting unit in corresponding described detecting unit respectively district, and described the first pad and the second pad are loaded corresponding voltage.
6. groove-type power MOS device contacts according to claim 5 hole resistance detection structure, it is characterized in that: described the first pad is connected in the first detecting unit in detecting unit district by the first contact hole and corresponding metal level thereof; Described the second pad is connected in the tail detecting unit in detecting unit district by the second contact hole and corresponding metal level thereof.
7. according to claim 1 or 3 described groove-type power MOS device contacts hole resistance detection structures is characterized in that: be interval between the tagma of this detecting unit respectively and be interval on epitaxial loayer between the source region of this detecting unit respectively and be formed with field oxide.
8. according to claim 1 or 3 described groove-type power MOS device contacts hole resistance detection structures, it is characterized in that: in described deep trench, part is filled with and the contacted deep trench grid of described gate dielectric layer, and be formed with on described deep trench grid and contacted the first insulating medium layer of described gate dielectric layer, wherein, the upper surface of the opening of the upper surface of described the first insulating medium layer and described deep trench and described epitaxial loayer all is positioned at same plane.
9. groove-type power MOS device contacts according to claim 3 hole resistance detection structure, it is characterized in that: in described wide groove, part is filled with and the contacted wide trench-gate of described gate dielectric layer, and be formed with on described wide trench-gate and contacted the first insulating medium layer of described gate dielectric layer, wherein, the upper surface of the upper surface of described the first insulating medium layer and described wide groove opening and described epitaxial loayer all is positioned at same plane.
10. groove-type power MOS device contacts according to claim 9 hole resistance detection structure, it is characterized in that: described the 3rd contact hole runs through successively described interlayer dielectric, the first insulating medium layer from top to bottom and extends to described wide trench-gate.
11. a groove-type power MOS device contacts hole resistance detection structure is characterized in that, described detection architecture comprises that at least chain connects the detecting unit district that some detecting units are set, and wherein, respectively this detecting unit in described detecting unit district comprises:
Epitaxial loayer is doped with P type semi-conducting material;
Interlayer dielectric is formed on described epitaxial loayer;
Metal level is formed on described interlayer dielectric, and corresponding with described detecting unit district;
The tagma is the N type semiconductor material, is positioned at described epitaxial loayer top;
The source region is heavy doping P type semiconductor material, is positioned at described epitaxial loayer top and is positioned on described tagma;
The first contact hole and the second contact hole, run through successively respectively described interlayer dielectric, source region from top to bottom and extend to top, described tagma, described the first contact hole is connected to the first voltage by its corresponding metal level, described the second contact hole is connected to second voltage by its corresponding metal level, so that the first contact hole is as the contact hole that detects outflow of bus current, the second contact hole is as the contact hole that detects the electric current inflow, and wherein, described the first voltage is higher than second voltage;
Deep trench, run through successively source region and tagma between described the first contact hole and the second contact hole from top to bottom, and extend to the epitaxial loayer that is positioned under described tagma, and described deep trench inwall is formed with gate dielectric layer, and be filled with in described deep trench and the contacted deep trench grid of described gate dielectric layer, and described deep trench grid loads grid voltage V
g, V
g0 and | V
g| | V
T|, wherein, V
TThreshold voltage for the NMOSFET during as the tagma with doped with P type semi-conducting material;
Wherein, in described detecting unit district, respectively isolation mutually between the metal level that is connected to the first contact hole and the second contact hole of this detecting unit, respectively the first contact hole of this detecting unit is connected to the second contact hole of another adjacent detecting unit to form the chain connection of detecting unit by its corresponding metal level; Be separated with epitaxial loayer between respectively between the tagma of this detecting unit and respectively between the source region of this detecting unit.
12. groove-type power MOS device contacts according to claim 11 hole resistance detection structure, it is characterized in that: respectively the deep trench grid of this detecting unit is interconnected.
13. groove-type power MOS device contacts according to claim 12 hole resistance detection structure, it is characterized in that: described detection architecture also comprises grid electrical contact district, wherein, described grid electrical contact district comprises epitaxial loayer, interlayer dielectric and metal level, wherein, described epitaxial loayer is doped with P type semi-conducting material, described interlayer dielectric is formed on described epitaxial loayer, described metal level is formed on described interlayer dielectric and is corresponding with described grid electrical contact district, simultaneously, described grid electrical contact district also comprises:
Wide groove, be formed at described epitaxial loayer top, and described wide trench wall is formed with gate dielectric layer, is filled with in described wide groove and the contacted wide trench-gate of described gate dielectric layer, wherein, respectively this deep trench grid is connected in described wide trench-gate and is interconnected by described wide trench-gate;
The 3rd contact hole runs through described interlayer dielectric and extends to described wide trench-gate, so that respectively this deep trench grid carries out the grid electrical contact by wide trench-gate, the 3rd contact hole and corresponding metal level thereof; Described the 3rd contact hole is connected to described grid voltage V by its corresponding metal level
g
14. groove-type power MOS device contacts according to claim 13 hole resistance detection structure, it is characterized in that: described detection architecture also comprises the 3rd pad in corresponding described grid electrical contact district, and described the 3rd pad is loaded corresponding voltage, wherein, described the 3rd pad is connected in described wide trench-gate by the 3rd contact hole and corresponding metal level thereof.
15. according to claim 11 or 13 described groove-type power MOS device contacts hole resistance detection structures is characterized in that: chain connects described detecting unit district is formed with and lays respectively at first detecting unit and the tail detecting unit that chain is located from beginning to end; Described detection architecture also comprises the first pad and second pad of initial and end detecting unit in corresponding described detecting unit respectively district, and described the first pad and the second pad are loaded corresponding voltage.
16. groove-type power MOS device contacts according to claim 15 hole resistance detection structure is characterized in that: described the first pad is connected in the first detecting unit in detecting unit district by the first contact hole and corresponding metal level thereof; Described the second pad is connected in the tail detecting unit in detecting unit district by the second contact hole and corresponding metal level thereof.
17. according to claim 11 or 13 described groove-type power MOS device contacts hole resistance detection structures is characterized in that: be interval between the tagma of this detecting unit respectively and be interval on epitaxial loayer between the source region of this detecting unit respectively and be formed with field oxide.
18. according to claim 11 or 13 described groove-type power MOS device contacts hole resistance detection structures, it is characterized in that: in described deep trench, part is filled with and the contacted deep trench grid of described gate dielectric layer, and be formed with on described deep trench grid and contacted the first insulating medium layer of described gate dielectric layer, wherein, the upper surface of the opening of the upper surface of described the first insulating medium layer and described deep trench and described epitaxial loayer all is positioned at same plane.
19. groove-type power MOS device contacts according to claim 13 hole resistance detection structure, it is characterized in that: in described wide groove, part is filled with and the contacted wide trench-gate of described gate dielectric layer, and be formed with on described wide trench-gate and contacted the first insulating medium layer of described gate dielectric layer, wherein, the upper surface of the upper surface of described the first insulating medium layer and described wide groove opening and described epitaxial loayer all is positioned at same plane.
20. groove-type power MOS device contacts according to claim 19 hole resistance detection structure is characterized in that: described the 3rd contact hole runs through successively described interlayer dielectric, the first insulating medium layer from top to bottom and extends to described wide trench-gate.
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