CN103378268B - 封装件和封装件的制造方法 - Google Patents

封装件和封装件的制造方法 Download PDF

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Publication number
CN103378268B
CN103378268B CN201310131498.0A CN201310131498A CN103378268B CN 103378268 B CN103378268 B CN 103378268B CN 201310131498 A CN201310131498 A CN 201310131498A CN 103378268 B CN103378268 B CN 103378268B
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CN
China
Prior art keywords
electrode
package
emitting element
light emitting
metal plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201310131498.0A
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English (en)
Chinese (zh)
Other versions
CN103378268A (zh
Inventor
冈部敏幸
小林刚
小林敏男
木村康之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Co Ltd
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Shinko Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Co Ltd filed Critical Shinko Electric Co Ltd
Publication of CN103378268A publication Critical patent/CN103378268A/zh
Application granted granted Critical
Publication of CN103378268B publication Critical patent/CN103378268B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8582—Means for heat extraction or cooling characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0365—Manufacture or treatment of packages of means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires

Landscapes

  • Led Device Packages (AREA)
CN201310131498.0A 2012-04-19 2013-04-16 封装件和封装件的制造方法 Expired - Fee Related CN103378268B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-095488 2012-04-19
JP2012095488A JP5989388B2 (ja) 2012-04-19 2012-04-19 パッケージ及びパッケージの製造方法

Publications (2)

Publication Number Publication Date
CN103378268A CN103378268A (zh) 2013-10-30
CN103378268B true CN103378268B (zh) 2017-10-03

Family

ID=48326072

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310131498.0A Expired - Fee Related CN103378268B (zh) 2012-04-19 2013-04-16 封装件和封装件的制造方法

Country Status (4)

Country Link
US (1) US8890295B2 (https=)
EP (1) EP2654093B1 (https=)
JP (1) JP5989388B2 (https=)
CN (1) CN103378268B (https=)

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CN105359284B (zh) * 2013-06-28 2019-05-14 西铁城时计株式会社 Led装置
JP6002858B2 (ja) * 2013-12-03 2016-10-05 日本カーバイド工業株式会社 発光素子搭載用基板、及び、それを用いた発光装置
USD778848S1 (en) * 2015-04-07 2017-02-14 Cree, Inc. Solid state light emitter component
JP6168096B2 (ja) 2015-04-28 2017-07-26 日亜化学工業株式会社 発光装置、パッケージ及びそれらの製造方法
JP6628031B2 (ja) * 2015-11-04 2020-01-08 ローム株式会社 電子部品
DE102016106270A1 (de) * 2016-04-06 2017-10-12 Osram Opto Semiconductors Gmbh Herstellung eines halbleiterbauelements
JP1566953S (https=) * 2016-04-28 2017-01-16
TWI647867B (zh) * 2016-08-31 2019-01-11 大陸商開發晶照明（廈門）有限公司 Led金屬基板和led模組
US10378736B2 (en) * 2016-11-03 2019-08-13 Foshan Nationstar Optoelectronics Co., Ltd. LED bracket, LED bracket array, LED device and LED display screen
CN108269899B (zh) * 2016-12-30 2020-06-05 光宝光电(常州)有限公司 发光二极管封装结构及其制造方法
WO2019059703A2 (ko) * 2017-09-22 2019-03-28 엘지이노텍 주식회사 발광소자 패키지 및 조명 모듈
JP6809442B2 (ja) * 2017-11-27 2021-01-06 Tdk株式会社 センサシステム、センサモジュールおよびセンサシステムの実装方法
JP7231809B2 (ja) * 2018-06-05 2023-03-02 日亜化学工業株式会社 発光装置
USD865688S1 (en) * 2018-07-03 2019-11-05 Lumens Co., Ltd. LED package
WO2024235649A1 (en) * 2023-05-17 2024-11-21 Ams-Osram International Gmbh Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device

Citations (1)

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CN100530727C (zh) * 2006-04-21 2009-08-19 三星电机株式会社 具有多阶梯反射表面结构的发光二极管封装及其制造方法

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JP4066608B2 (ja) 2001-03-16 2008-03-26 日亜化学工業株式会社 パッケージ成形体及びその製造方法
CN100338786C (zh) * 2002-06-19 2007-09-19 三垦电气株式会社 半导体发光装置及其制法和半导体发光装置用反射器
JP2005197329A (ja) 2004-01-05 2005-07-21 Stanley Electric Co Ltd 表面実装型半導体装置及びそのリードフレーム構造
US20050199899A1 (en) * 2004-03-11 2005-09-15 Ming-Der Lin Package array and package unit of flip chip LED
WO2006016398A1 (ja) * 2004-08-10 2006-02-16 Renesas Technology Corp. 発光装置および発光装置の製造方法
JP2006222271A (ja) * 2005-02-10 2006-08-24 Ngk Spark Plug Co Ltd 発光素子実装用基板
TWI314366B (en) * 2006-04-28 2009-09-01 Delta Electronics Inc Light emitting apparatus
US7485480B2 (en) * 2006-09-21 2009-02-03 Harvatek Corporation Method of manufacturing high power light-emitting device package and structure thereof
US20080089072A1 (en) * 2006-10-11 2008-04-17 Alti-Electronics Co., Ltd. High Power Light Emitting Diode Package
US8058667B2 (en) * 2009-03-10 2011-11-15 Nepes Led Corporation Leadframe package for light emitting diode device
JPWO2010119830A1 (ja) * 2009-04-13 2012-10-22 パナソニック株式会社 発光ダイオード
DE102010025319B4 (de) * 2010-06-28 2022-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines oberflächenmontierbaren Halbleiterbauelements und oberflächenmontierbare Halbleiterbauelemente
US8253330B2 (en) * 2010-11-30 2012-08-28 GEM Weltronics TWN Corporation Airtight multi-layer array type LED

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
CN100530727C (zh) * 2006-04-21 2009-08-19 三星电机株式会社 具有多阶梯反射表面结构的发光二极管封装及其制造方法

Also Published As

Publication number Publication date
EP2654093A3 (en) 2015-11-18
CN103378268A (zh) 2013-10-30
EP2654093A2 (en) 2013-10-23
EP2654093B1 (en) 2018-11-28
JP2013222931A (ja) 2013-10-28
US8890295B2 (en) 2014-11-18
JP5989388B2 (ja) 2016-09-07
US20130277701A1 (en) 2013-10-24

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